T188-Electronic Devices & circuits

Q.No
1.

2.

Description

Marks

a) Explain the working of a PN diode in forward and reverse conditions.

b)Explain how a PN junction diode acts as a Rectifier and Mention the Applications
of PN Diode .
OR
c) Derive an expression for Continuity Equation.
a) Derive the current equation of a PN diode.

[8M]
[7M]
[15M]
[15M]

OR

3.

4.

5.

6.

7.

8.

9.

b) Calculate the Silicon diode current for a Forward bias voltage of 0.7V at 260C , if
the reverse saturation current is 20A.
c) Explain Hall Effect and describe its applications.
a) Explain about Transition capacitance and obtain the expression for it.
b) The diode current is 0.6mA, when the applied voltage is 400mV and 20mA, when
the applied Voltage is 500mV. Determine .
OR
c) Explain the V-I characteristics of a Tunnel diode with a circuit diagram.
a) Derive an expression for Fermi-level in Intrinsic and Extrinsic (both P and N
type) Semiconductors.
b) Explain the effect of temperature on diode characteristics.
OR
c) The current flowing in a PN diode at room temperature is 20*10-6A, when
a large reverse bias is applied. Calculate the current flowing when 0.8V is applied.
d) Explain about Diffusion capacitance and obtain the expression for it.
a) Discuss the Breakdown mechanism in a PN diode and distinguish Avalanche and
Zener Breakdowns.
b) Draw the Band Diagrams of Insulator, Semiconductor and Conductor
OR

[7M]
[8M]
[8M]
[7M]
[15M]
[10M]
[5M]
[7M]
[8M]
[9M]
[6M]

c) Explain the formation of a potential barrier in a PN diode. Derive an expression

[15M]
for contact potential.
a) Draw the circuit diagram of a center-tap Full-wave rectifier and explain its working [9M]
operation with necessary waveforms.
b) Explain the necessity of a bleeder resistor in LC filter.
[6M]
OR
c) Derive the Expressions for the following parameters of the FWR circuit.
[15M]
i) Average DC current
ii) Average DC voltage iii) R.M.S value of current
iv) DC power output v) AC power input vi) Efficiency
vii) Ripple factor
a) What is Rectifier? Explain why diode can be used as a rectifier?
[6M]
b) Draw the circuit diagram of a half-wave rectifier and explain its operation with the help [9M]
of waveforms.
OR
c) Explain the following terms.
i) Ripple factor
ii) Transformer Utilization factor
iii) Efficiency
iv) Peak inverse voltage
v) Form factor
vi) Peak factor
a) Draw the circuit diagram of a Full-wave Bridge rectifier and explain its working
operation with necessary waveforms.
b) Compare the rectifier circuits.
OR
c) Derive the expression for ripple factor for full wave rectifier with capacitor filter.
d) Prove that the ripple factor of a full wave rectifier circuit is 0.48.
a) Calculate the value of capacitance to use in a capacitor filter of a full wave rectifier
operating at a frequency of 50 Hz if the ripple factor is 10% for a load resistance of 1K.
b) Derive the expression for ripple factor in Capacitor filter when used with half wave
rectifier.
OR

[15M]
[9M]
[6M]
[8M]
[7M]
[8M]
[7M]

c) For a full wave rectifier circuit shown in figure , determine

[15M]

(i) DC output voltage,(ii) PIV,(iii) Rectification effeminacy.

10. a) Derive the Expressions for the following parameters of the HWR circuit.

b) Average DC voltage
c) R.M.S value of current
e) AC power input
f) Efficiency g) Ripple factor
OR
b) Why filter circuit is necessary with rectifiers. List the different filters used with their
merits and demerits.
c) Explain how zener regulator works under varying input voltage conditions.

[15M]

a) Average DC current
d) DC power output

11. a) Define , and of a transistor and obtain the relation between them.

12.

13.

14.

15.

16.

17.

b) Explain the construction of JFET with neat diagram

OR
c) Draw the circuit diagram of NPN transistor CE configuration and explain its operation
with the help of input and output characteristics.
a) With the help of neat sketches and characteristic curves explain the operation of the
Junction Field Effect Transistor.
b) Define rd, gm and of JFET and obtain the relation between them.
OR
c) If the base current in a transistor is 100A when the emitter current is 25 mA. What
are the values of and ? Also calculate the collector current?
d) Write short notes on UJT.
a) Draw the circuit to obtain drain and transfer characteristics for an n-channel
JFET.Explain its operation with the help of these characteristics.
OR
b) What are the differences between BJT and JFET.
c) Define the following terms
i) Emitter efficiency ii) Transport factor iii) Large signal current gain
a) Draw the circuit diagram of PNP transistor CB configuration and explain its operation
with the help of input and output characteristics.
OR
b) What are the differences between JFET and MOSFET.
c) Write short notes on SCR
a) Derive the Ebers-Moll equations of a transistor.
OR
b) Explain the constructional features of a depletion mode MOSFET and explain its basic
operation.
c) What is Early-Effect or base-width modulation.
a) What is the need for biasing a transistor
b) Draw a transistor Self Bias circuit and derive the expression for its stability
factor.
OR
c) What is Thermal Runaway.
d) What is Thermal Stability and Obtain the conditions for Thermal Stability.
a) What is a d.c load line? Explain its importance.
b) Draw a transistor Fixed Bias circuit and derive the expression for its stability
factor.
OR
c) define the stability factors( S, S' and S'')
d) The D.C bias circuit of a common Emitter transistor amplifier is shown in the
figure . Find the percentage change in collector current, if the transistor with h fe = 50 is
replaced by another transistor with hfe = 150. Given that the base emitter drop
VBE = 0.6V.

[7M]
[8M]
[7M]
[8M]
[15M]
[8M]
[7M]
[7M]
[8M]
[15M]
[8M]
[7M]
[15M]
[8M]
[7M]
[15M]
[10M]
[5M]
[5M]
[10M]
[5M]
[10M]
[7M]
[8M]
[6M]
[9M]

18. a) Draw a transistor Collector-to-Base Bias circuit and derive the expression for its stability

[8M]
factor.
[7M]
b) Explain the Diode compensation technique using circuit diagram.
OR
c) List the advantages and disadvantages of Fixed-Bias method.
[5M]
d) With the neat circuit diagrams discuss about Thermistor and Sensistor compensation [10M]
techniques.
19. a) Find the stability factors S, S' and S'' for the circuit shown below.
[15M]

OR
b) Discuss the problem of selection of operating point for a transistor and also discuss how
this operating point can be maintained stable.
c) Draw the circuit diagram involving a diode that compensates the reverse saturation
current variations in a CE transistor biasing circuit and explain the operation.
20. a) Derive expressions for stability factors of a Self-Bias circuit.
OR
b) What is the purpose of biasing a transistor? Indicate the methods of biasing and compare
them.
21. a) Draw h-parameter model of a CE transistor and derive expressions for
i)input impedance
ii)voltage gain
iii) current gain
iv)output impedance
OR

[8M]
[7M]
[15M]
[15M]

[15M]

b) Among the three configurations of BJT, CE configuration is widely used. Justify this [8M]
statement and give its application.
c) Discuss about the Feedback in amplifiers.
[7M]
22. a) A CE amplifier is drawn by a voltage source of internal resistance R s= 1000 and the [15M]
load impedance is RL= 1200. The h-parameters are hie = 1.2 K, hre = 2*10-4, hfe = 60 and
hoe = 25A/V. Compute the current gain AI, input resistance Ri, voltage gain AV and output
resistance Ro using exact analysis and approximate analysis.
OR
b) a) Draw h-parameter model of a CB transistor and derive expressions for
i)input impedance
ii)voltage gain
iii) current gain
iv)output impedance
23. a) A transistor used in a CC Circuit is shown in Figure with the following set of
h parameters.hic = 2 K, hfc = -51, hrc = 1, hoc = 25 106
Find the values of input and output resistances, current and voltage gains of the
amplifier stage. Use the approximate analysis.

[15M]
[15M]

OR
b) Compare the CB,CE and CC amplifiers.
c) Draw the circuit diagram of CE amplifier and explain its working.

[8M]
[7M]

24. a) A CB amplifier driven by a source of internal resistance R s = 600 and the load [15M]

impedance is RL = 1200. The h-parameters are hib = 22, hrb = 4*10-4, hfb = -0.98 and hob
=0. 25A/V. Compute the current gain AI, input resistance Ri, voltage gain AV, overall
current gain AIS, overall voltage gain AVS and output resistance Ro using exact analysis and
approximate analysis.
OR
b) A CE amplifier has transistor with h-parameters h ie = 1.1 K, hre = 25*10-4, hfe = 100 and [15M]
hoe = 25A/V.Compute AI, Ri, AV,AVS and Ro with RL=2K and Rs=10 K.
25. a) Draw the circuit diagram of CC amplifier and explain its working.
[7M]
b) Write short notes on Oscillators.
[8M]
OR
c) A Emitter Follower circuit using a transistor has the following h-parameters h ie=1 K, hre [15M]
= 25*10-4, hfe = 200 and hoe = 25A/V. Compute AI, Ri, AV,AVS and Ro with RL=4K and
Rs=1 K.using Exact and approximate analysis.