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Product specification
BU2527DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
RBSOA performance.
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
VBE = 0 V
PINNING - SOT399
PIN
PIN CONFIGURATION
DESCRIPTION
base
collector
emitter
Ths 25 C
IC = 8.0 A; IB = 1.6 A
f = 64 kHz
ICsat = 6.0 A; f = 64 kHz
case isolated
TYP.
MAX.
UNIT
6.0
1.7
1500
800
12
30
45
5.0
2.0
V
V
A
A
W
V
A
s
SYMBOL
case
c
b
Rbe
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
VBE = 0 V
MIN.
MAX.
UNIT
-65
-
1500
800
12
30
8
12
200
7
45
150
150
V
V
A
A
A
A
mA
A
W
C
C
TYP.
MAX.
UNIT
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
3.7
K/W
Rth j-hs
Junction to heatsink
2.8
K/W
Rth j-a
Junction to ambient
in free air
35
K/W
1 Turn-off current.
September 1997
Rev 1.200
Philips Semiconductors
Product specification
BU2527DX
PARAMETER
CONDITIONS
Visol
Cisol
MIN.
TYP.
MAX.
UNIT
2500
22
pF
MIN.
TYP.
MAX.
UNIT
1.0
2.0
mA
mA
800
7.5
5
-
110
55
13.5
11
7
1.6
5.0
1.1
10
2.0
mA
V
V
V
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
VCEOsust
IEBO
REB
BVEBO
VCEsat
VBEsat
hFE
hFE
VF
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
145
pF
1.7
0.1
2.0
0.2
s
s
IF = 8 A; dIF/dt = 50 A/s
16
VF = 5 V
410
ns
ts
tf
Vfr
tfr
September 1997
Rev 1.200
Philips Semiconductors
Product specification
ICsat
TRANSISTOR
IC
BU2527DX
+ 150 v nominal
adjust for ICsat
DIODE
t
Lc
IB
I B end
t
5 us
D.U.T.
6.5 us
LB
IBend
Cfb
16 us
VCE
-VBB
Rbe
VCC
ICsat
90 %
IC
LC
10 %
tf
VCL
IBend
ts
LB
IB
IBend
-VBB
Rbe
CFB
T.U.T.
- IBM
BU2525DF
hFE
100
Tj = 25 C
Tj = 125 C
5V
10%
time
t fr
V
10
1V
5V
V
fr
1
0.1
time
10
100
IC / A
September 1997
Rev 1.200
Philips Semiconductors
Product specification
1.2
VBESAT / V
1.1
BU2527DX
BU2525AF
VCESAT / V
10
BU2525AF
Tj = 25 C
Tj = 25 C
Tj = 125 C
Tj = 125 C
1
0.9
8A
0.8
1
6A
IC/IB=
0.7
0.6
5A
0.5
IC = 4 A
0.4
0.1
1
IC / A
0.1
10
0.1
VCESAT / V
1
IB / A
10
BU2525AF
BU2527AF
Poff / W
100
IC/IB =
0.9
0.8
0.7
IC =
0.6
6A
10
0.5
5A
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
100
10
IC / A
1.2
VBESAT / V
BU2525AF
BU2527AF
ts, tf / us
Tj = 25 C
3.5
Tj = 125 C
1.1
2.5
0.9
IC=
0.8
IC =
1.5
6A
8A
1
6A
5A
4A
0.7
0.6
0
2
IB / A
0.5
0
September 1997
5A
Rev 1.200
Philips Semiconductors
Product specification
PD%
120
BU2527DX
IC / A
BU2527AF
30
110
100
90
80
70
20
60
50
40
10
30
20
10
0
0
20
40
60
80
Ths / C
100
120
140
500
1000
1500
VCE / V
10
Zth / (K/W)
BU2525AF
IC / A
BU2525AF
100
tp =
0.5
0.1
0.2
0.1
0.05
ICM
0.02
ICDC
40 us
PD
0.01
D=0
0.001
1E-06
= 0.01
tp
D=
1E-02
t/s
100 us
1E-04
10
tp
T
1E+00
Ptot
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000 VCE / V
September 1997
Rev 1.200
Philips Semiconductors
Product specification
BU2527DX
MECHANICAL DATA
Dimensions in mm
5.8 max
16.0 max
3.0
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
18.1
min
4.5
1.1
0.4 M
2
0.95 max
5.45
5.45
3.3
Fig.17. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
Rev 1.200
Philips Semiconductors
Product specification
BU2527DX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
September 1997
Rev 1.200