Chia-Hung Hsu

()

Ph. D.in Physics, Boston University, USA

S118; ext. 7118

E147, ext 3147

(03)578-3813

E-mail

chsu@nsrrc.org.tw

(/)

X
III-V (quantum dots)(nano-wires)(strain
field)

My research interests focus on the thin film growth mechanism and structural properties of
nano-materials and ultra-thin epitaxial films. The major experimental tool is x-ray scattering. In
the last few years, my group has been working on the structural investigation of III-V
semiconductor quantum dots and nano-wires. We resolved the strain field and compositional
distribution of the MBE grown, self-assembled nano-materials and correlated the structural
characteristics with optoelectronic and other physical properties. We have also studied the
crystal structure and interfacial atomic arrangement of epitaxial films of various metal oxides,
which provide valuable data to examine various thin film growth mechanisms and the role of
interfacial chemistry. The other on-going project is investigating the evolution of surface
morphology upon low energy ion sputtering. Regularly arranged nano-features, such as nanodots and ripples, can be fabricated by ion bombardment. The goal of this study is to understand
the mechanisms for the formation of these surface features and the laws governing the surface
kinetic roughening phenomenon.

Selected Publications

1. Z. K. Yang, Y. J. Lee, W. C. Lee, P. Chang, M. L. Huang, and M. Hong, C.-H. Hsu, and J.
Kwo, "Cubic HfO2 Doped with Y2O3 Epitaxial films on GaAs (001) of Enhanced Dielectric
Constant", Appl. Phys. Lett. 90, (2007).

2. W. J. Chang, C. C. Hsieh, T. Y. Chung, S. Y. Hsu, K. H. Wu, T. M. Uen, J.-Y. Lin, J. J. Lin,

C.-H. Hsu, Y. K. Kuo, H. L. Liu, M. H. Hsu, Y. S. Gou, and J. Y. Juang, ",Fabrication and Low
Temperature Thermoelectric Properties of NaxCoO2 (x = 0.68 and 0.75) Epitaxial Films by the
Reactive Solid-Phase Epitaxy", Appl. Phys. Lett. 90, 61917 (2007).

3. W.-R. Liu, W. F. Hsieh, C.-H. Hsu, and K. S. Liang, and F. S.-S. Chien, Influence of the
Threading Dislocations on the Electrical Properties in Epitaxial ZnO Thin Films, J. of Crystal
Growth 297, 294 (2006).

4. T.Y. Cheng, C.W. Lin, L. Chang, C.H. Hsu, J.M. Lee, J.M. Lee, J.M. Chen, J.-Y. Lin, K. H.
Wu, T. M. Uen, Y. S. Gou, J. Y. Juang, Magnetotransport properties, electronic structure, and
microstructure of La0.7Sn0.3MnO3 thin films, Phys. Rev. B 74, 134428 (2006).

5. C.-H. Hsu, P. Chang, Z. K. Yang, Y. J. Lee, M. Hong, J. Kwo, C. M. Huang and H. Y. Lee,
Structure of HfO2 films epitaxially grown on GaAs (001), Appl. Phys. Lett. 89, 122907
(2006).

6. C.-H. Hsu, Mau-Tsu Tang, Hsin-Yi Lee, Chih-Mon Huang, K.S. Liang, S. D. Lin, Z. C. Lin,
C. P. Lee, "Composition Determination of Semiconductor Quantum Wires by X-ray Scattering",
Physica B 357, 6 (2005).

7. C.-H. Hsu, U-Ser Jeng, Hsin-Yi Lee, and K. S. Liang, D. Windover, T.-M. Lu, and C. Jin,
"Structural Study of a Low Dielectric Thin Film Using X-ray Reflectivity and Grazing
Incidence Small Angle X-Ray Scattering", Thin Solid Films 472, 323 (2005).

8. C.-H. Hsu, H.-Y. Lee, Y.-W. Hsieh, Y. P. Stetsko, N.T. Yeh, J.-I. Chyi, D. Y. Noh, M.-T. Tang,
and K.S. Liang, X-ray scattering studies on InGaAs quantum dots, Physica B 336, 98 (2003).