CM600DY-12NF

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com

Dual IGBTMOD
NF-Series Module

600 Amperes/600 Volts

TC MEASURED POINT
(BASEPLATE)
A
F

F
W

G2

E1
C2E1

L
(4 PLACES)

E2

E2

C1

G1

K
M NUTS
(3 PLACES)

Description:
Powerex IGBTMOD Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and
interconnects are isolated from
the heatsinking baseplate, offering
simplified system assembly and
thermal management.

T THICK
U WIDTH

S
C

LABEL

Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking

G2
E2

C2E1

E2

C1

E1
G1

Outline Drawing and Circuit Diagram

Dimensions

4.33

B
C

Inches
3.15

Millimeters

Dimensions

Inches

Millimeters

110.0

M6 Metric

M6

80.0

1.18

30.0

0.71

18.0

0.28

7.0

1.14+0.04/-0.002 29.0+1.0/-0.5

3.660.01

93.00.25

2.440.01

62.00.25

0.83

21.2

0.33

8.5

0.98

25.0

0.24

6.0

0.02

0.5

0.59

15.0

0.110

2.8

0.81

20.5

0.16

4.0

0.55

14.0

0.85

21.5

0.26 Dia.

Dia. 6.5

Rev. 09/09

Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM600DY-12NF is a 600V
(VCES), 600 Ampere Dual
IGBTMOD Power Module.
Type

Current Rating
Amperes

VCES
Volts (x 50)

CM

600

12

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DY-12NF
Dual IGBTMOD NF-Series Module
600 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 C unless otherwise specified

Ratings

Symbol

CM600DY-12NF

Units

Tj

40 to 150

Junction Temperature
Storage Temperature

Tstg

40 to 125

Collector-Emitter Voltage (G-E Short)

VCES

600

Volts

Gate-Emitter Voltage (C-E Short)

VGES

20

Volts

IC

600

Amperes

ICM

1200*

Amperes

IE

600

Amperes

Emitter Surge Current**

IEM

1200*

Amperes

Maximum Collector Dissipation (TC = 25C, Tj 150C)

PC

1130

Watts

Mounting Torque, M6 Main Terminal

40

in-lb

Mounting Torque, M6 Mounting

40

in-lb

580

Grams

VISO

2500

Volts

Collector Current*** (DC, TC = 89C)

Peak Collector Current
Emitter Current** (TC = 25C)

Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Static Electrical Characteristics, Tj = 25 C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

1.0

mA

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

0.5

Gate-Emitter Threshold Voltage

VGE(th)

IC = 60mA, VCE = 10V

5.0

6.0

7.5

Volts

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 600A, VGE = 15V, Tj = 25C

1.7

2.2

Volts

IC = 600A, VGE = 15V, Tj = 125C

1.7

Volts

Total Gate Charge

QG

VCC = 300V, IC = 600A, VGE = 15V

2400

nC

Emitter-Collector Voltage**

VEC

IE = 600A, VGE = 0V

2.6

Volts

Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified

Characteristics

Min.

Typ.

Max.

Units

Input Capacitance

Symbol

Cies

Test Conditions

90

nf

Output Capacitance

Coes

11.0

nf

Reverse Transfer Capacitance

Cres

3.6

nf

Inductive

Turn-on Delay Time

td(on)

Load

Rise Time

Switch

Turn-off Delay Time

Time

Fall Time

VCE = 10V, VGE = 0V

500

ns

300

ns

tr

VCC = 300V, IC = 600A,

td(off)

VGE1 = VGE2 = 15V, RG = 4.2,

750

ns

tf

Inductive Load

300

ns

Diode Reverse Recovery Time**

trr

Switching Operation,

250

ns

Diode Reverse Recovery Charge**

Qrr

IE = 600A

8.7

*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips.

Rev. 09/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DY-12NF
Dual IGBTMOD NF-Series Module
600 Amperes/600 Volts

Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified

Characteristics
Thermal Resistance, Junction to Case

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Rth(j-c)Q

Per IGBT 1/2 Module, TC Reference

0.11

C/W

0.18

C/W

0.046

C/W

0.02

C/W

1.0

10

Thermal Resistance, Junction to Case

Point per Outline Drawing

Rth(j-c)D

Per FWDi 1/2 Module, TC Reference

Thermal Resistance, Junction to Case

Point per Outline Drawing

Rth(j-c)Q

Per IGBT 1/2 Module,

Contact Thermal Resistance
External Gate Resistance

11

300

10

10

VGE = 15V
Tj = 25C
Tj = 125C

300

600

900

IC = 1200A

IC = 600A
IC = 240A

4
2
0

1200

Tj = 25C

10

12

14

16

18

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR-CURRENT, IC, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)

CAPACITANCE VS. VCE

(TYPICAL)

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

103

103

102

tf

102

Cies

101

Coes

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

Rev. 09/09

100
10-1

102
tr

101

VCC = 300V
VGE = 15V
RG = 4.2
Tj = 125C
Inductive Load

Cres

VGE = 0V

20

td(off)

td(on)

SWITCHING TIME, (ns)

Tj = 25C
Tj = 125C

103

101

COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)

600

COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)

12

104
EMITTER CURRENT, IE, (AMPERES)

15

900

10

Tj = 25oC

13

COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)

COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)

CAPACITANCE, Cies, Coes, Cres, (nF)

COLLECTOR CURRENT, IC, (AMPERES)

VGE =
20V

Per 1/2 Module, Thermal Grease Applied

RG

OUTPUT CHARACTERISTICS
(TYPICAL)

1200

TC Reference Point Under Chips

Rth(c-f)

100

101

102

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

100
101

102

103

COLLECTOR CURRENT, IC, (AMPERES)

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DY-12NF
Dual IGBTMOD NF-Series Module
600 Amperes/600 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)

VCC = 300V
VGE = 15V
RG = 4.2
Tj = 25C
Inductive Load

SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)

101
101

102

101
103

102

16

VCC = 200V

12

VCC = 300V

8
4
0

700

1400

2100

2800

GATE CHARGE, QG, (nC)

SWITCHING LOSS VS.

GATE RESISTANCE (TYPICAL)

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)

100

10-1

101

10-2

ESW(on)
ESW(off)

100
100

101
GATE RESISTANCE, RG, ()

IC = 600A

EMITTER CURRENT, IE, (AMPERES)

VCC = 300V
VGE = 15V
IC = 600A
Tj = 125C
Inductive Load
C Snubber at Bus

SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)

102

20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

102

REVERSE RECOVERY CURRENT, Irr, (AMPERES)

103

Irr
trr

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')

Zth = Rth (NORMALIZED VALUE)

REVERSE RECOVERY TIME, trr, (ns)

103

SWITCHING LOSS VS.

COLLECTOR CURRENT (TYPICAL)

GATE CHARGE VS. VGE

10-3

10-3

10-2

10-1

100

3500

102

VCC = 300V
VGE = 15V
RG = 4.2
Tj = 125C
Inductive Load
C Snubber at Bus

101

ESW(on)
ESW(off)

100
101

102

103

COLLECTOR CURRENT, IC, (AMPERES)

101

10-1

Single Pulse
TC = 25C
Per Unit Base =
Rth(j-c) =
0.11C/W
(IGBT)
Rth(j-c) =
0.18C/W
(FWDi)

10-2

10-5

10-4

10-3
10-3

TIME, (s)

Rev. 09/09