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2 0 1 3 11 N o . 1 0 8

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C60
1996 Curl, Kroto, Smalley:
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VsSiGaAs

2013 11 No.108

basal plane

Young's Modulus

1,100 Gpa

Fracture Strength

125Gpa

Mechanic Strength

100~400Gpa

Thermal Conductivity

5,300W/mK(in Plane)
6~30W/mK(C-axis)

5300 WmK[5]

2630 m 2 g

Thermal Stability in Air

450~650 C

Specific Capacitor

531F/g

graphene flake

Mobility of Charge Carriers

200,000cm2/Vs

Specific Surface Area

2,630m2/g

Transparency

97%

linear dispersion

[6]

3(d)

2.3[4]

(b)

107

106

105

-1

(d)
light transmittance(%)

(c)

n(1011cm-2)

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100

3(a) (b)
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98

96

25

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1.

NMP
DMF5

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1959Broide

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Hummers

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graphene flake

XuHummers

graphene oxideGO[10]

oxygen functional groups

<1

basal planeedge

um

Mechanical exfoliation
(research,
prototyping)

CVD

Quality

(coating, bio, transparent)

conductive layers,
electronics,
photonics)

SiC
(electronics,
RF transistors)

Molecular
assembly
(nanoelectronics)
Liquid-phase exfoliation
(coating, composites,
inks, energy storage,
bio, transparent conductive layers)

Price (for mass production)

4[6]

64

2013 11 No.108

K. S. Novoselov et al., Nature

Graphite

1. Graphite intercalation
Compounds (GICs)

3. Electrochemical
intercalation

2. Sonication in
organic solvents

Surfactants
stabilization

Highest monolayer
yield ~ 50%
Highest monolayer
yield ~ 90%

Complete
exfoliation to GNS

Depostion of graphene sheets onto substrate

5(ultra-sonication)
[7]
K. P. Loh et al., J. Mater. Chem.

[14]6(b)

epoxyC=Ohydroxyl

C-OHcarboxylCOOH

carbonylC-O

[16]

6(c)

CHxOH

thermal annealinghydrazine

vapor

700 oC

1000 o C

reduced graphene

oxiderGO[15]

7(d)

2 0 1 3 11 N o . 1 0 8

65

(a)

Graphite

(b)

Graphite
oxide

GO
dispersion
GO-host
solution
GO film

rGO
dispersion

rGO film

(c)

rGO

rGO-host
solution
rGO composite film

6(a) (b) (c)[11-13]

G. Eda et al., Adv. Mater.

(a)

(c)

(b)

(d)

7(a)(b)X-ray
(d)[16]
S. Stankovich et al., Nature

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2013 11 No.108

graphene

ink9

solution processed

210 ohmsq

fabrication

96

3.

4.

SiC

2 0 11

900-1000 o C

[17]8

H2Ar)

17 cm 2

)CH radicals

Vs

nucleation

domain

(a)

Graphite

Bilayered graphene

(b)

Graphene lnk

(c)

8(a)(b)(c)
[17]
C. Y. Su et al., ACS Nano

2 0 1 3 11 N o . 1 0 8

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(c)

(d)

105
Sheet resistance (Ohm/sq)

(a)

As prepared

T~96%

104
103

Acid treated
400oC annealed

102
101
1

(b)

9(a)(b)(c)
(d)[17] C. Y. Su et al., ACS Nano

68

10

2010

Roll-to-Roll

production[21]30

[19]

12

2011

2009X.Li

[22]

[20]

grain boundary

90

11

transfer-free process

2013 11 No.108

13

CVD[27-28]

Copper Oxide

1000 C, CH4/H2

Copper

14

LED

[23][25]

10
(domain)

[18]

X. Li et al., Nano Lett.

Graphene

PMMA
Cu etching

Cu

PMMA

Remove
of PMMA

SiO2 substrate

11

X. Li et al., Nano Lett.

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Praphene on
polymer support

Polymer support

Target substrate

Graphene on Cu foil

Cu etchant

Released
polymer support

Graphene on target

12[21]
B. Sukang et al., Nature Nanotech.

SiO2/Si
Cu

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[25][26]
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(SiC)

(Ni, Cu)

10-100m

< 2 mm

< 1 m

>4

>6

> 20 m

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