CED84A4/CEU84A4

N-Channel Enhancement Mode Field Effect Transistor

FEATURES
40V, 80A, RDS(ON) = 5.1m @VGS = 10V.
RDS(ON) = 7.8m @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired.
TO-251 & TO-252 package.
G

D
G
S
CEU SERIES
TO-252(D-PAK)

ABSOLUTE MAXIMUM RATINGS

Parameter

G
D

S
CED SERIES
TO-251(I-PAK)

Tc = 25 C unless otherwise noted

Symbol
Limit

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Drain Current-Continuous @ TC = 25 C

ID

@ TC = 100 C
Drain Current-Pulsed a

IDM

Maximum Power Dissipation @ TC = 25 C

Operating and Store Temperature Range

Units
V

20

80

56

320

57.7

0.38

W/ C

TJ,Tstg

-55 to 175

PD

- Derate above 25 C

40

Thermal Characteristics
Symbol

Limit

Units

Thermal Resistance, Junction-to-Case

Parameter

RJC

2.6

C/W

Thermal Resistance, Junction-to-Ambient

RJA

50

C/W

Rev 1. 2011.Mar
http://www.cetsemi.com

Details are subject to change without notice .

1

CED84A4/CEU84A4
Electrical Characteristics
Parameter

TA = 25 C unless otherwise noted

Symbol

Test Condition

Min

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250A

40

Zero Gate Voltage Drain Current

IDSS

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

Typ

Max

Units

VDS = 40V, VGS = 0V

IGSSF

VGS = 20V, VDS = 0V

100

nA

IGSSR

VGS = -20V, VDS = 0V

-100

nA

Off Characteristics
V

On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance

VGS(th)
RDS(on)

VGS = VDS, ID = 250A

VGS = 10V, ID = 30A

1
4

5.1

VGS = 4.5V, ID =20A

5.8

7.8

Dynamic Characteristics d
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS = 15V, VGS = 0V,

f = 1.0 MHz

3070

pF

385

pF

285

pF

Switching Characteristics d
Turn-On Delay Time

td(on)

Turn-On Rise Time

tr

Turn-Off Delay Time

td(off)

VDD = 15V, ID = 1A,

VGS = 10V, RGEN = 6

19

38

ns

10

20

ns
ns

84

168

Turn-Off Fall Time

tf

22

44

ns

Total Gate Charge

Qg

67

87

nC

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = 15V, ID = 16A,

VGS = 4.5V

10

nC

12

nC

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current b

IS

Drain-Source Diode Forward Voltage c

VSD

VGS = 0V, IS = 20A

Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.

80

1.2

CED84A4/CEU84A4
100

VGS=10,8,6V

60

ID, Drain Current (A)

ID, Drain Current (A)

75

45
30

VGS=3V

15
0

-55 C

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)

1800
1200
600

Coss
Crss
0

10

15

20

25

2.2
1.9

ID=20A
VGS=10V

1.6
1.3
1.0
0.7
0.4
-100

-50

50

100

150

200

VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

VDS=VGS

ID=250A

IS, Source-drain current (A)

C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage

TJ=125 C

VGS, Gate-to-Source Voltage (V)

Ciss

1.1
1.0
0.9
0.8
0.7
0.6
-50

25 C

20
0

2400

1.2

40

VDS, Drain-to-Source Voltage (V)

3000

1.3

60

3600

80

-25

25

50

75

100

125

150

VGS=0V
10

10

10

0.4

0.6

0.8

1.0

1.2

1.4

TJ, Junction Temperature( C)

VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

10

10

VDS=15V
ID=16A

8
6
4
2

RDS(ON)Limit

ID, Drain Current (A)

VGS, Gate to Source Voltage (V)

CED84A4/CEU84A4

15

30

45

60

10

100ms
1ms
DC

10

10

75

10ms

TC=25 C
TJ=175 C
Single Pulse

10

-1

10

10

10

Qg, Total Gate Charge (nC)

VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge

Figure 8. Maximum Safe

Operating Area

VDD
t on
V IN

RL
D

VGS
RGEN

toff
tr

td(on)

td(off)

tf
90%

90%

VOUT

VOUT

10%

INVERTED

10%

G
90%

VIN

50%

50%

10%

PULSE WIDTH

Figure 10. Switching Waveforms

r(t),Normalized Effective
Transient Thermal Impedance

Figure 9. Switching Test Circuit

10

D=0.5
0.2

10

0.1

-1

PDM

0.05

t1

0.02
0.01

1. RJC (t)=r (t) * RJC

2. RJC=See Datasheet
3. TJM-TC = P* RJC (t)
4. Duty Cycle, D=t1/t2

Single Pulse

10

-2

10

-4

t2

10

-3

10

-2

10

-1

10

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve

10

10