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I.
INTRODUCTION
bit lines. The stability of Read operation depends upon the cell
ratio, which should be sufficiently large to obtain the read
stability. Cell ratio is the ratio of size of the pull-down
transistor to the size of access transistor.
.
READ OPERATION
In the read operation, both the bit line and bit line bar is pre
charged to VDD and then the word line is enabled. The bit line
and bit line bar will get the voltages of out and out bar of bit
cell. In this read operation, stability of 6T SRAM is major
concern, as the output of bit cell should not flip and must hold
their original values, while transferring their node voltages to
FIG 2.
WRITE OPERATION
N-CURVE METHOD
also show an increase in the read noise current as the cell ratio
is increased which means that the current required to change
the state of the cell also increases.
CONCLUSION
As the cell ratio increases, the stability of 6T SRAM improves
and both read and write margin increases. In this paper, cell
ratio varies from 0.5 to 2.5 in 0.5 increments and both read
and write margin improves.
B. Effect of Supply Voltage
In order to decrease power consumption of digital circuits,
supply voltage scaling is commonly employed. The noise
Margin of SRAM cell is also a function of the supply voltage.
Although the leakage current increases, but the supply
required to withstand will overpower noise variations to give
stable output. Due to this voltage scaling will be limited to
levels such that noise margin is still greater than the expected
noise in the circuit.
CONCLUSION
As the power supply increases, the write margin and read
margin increases. This result is expected since as the supply
voltage decreases, the effect of noise present becomes more
significant thus the circuit is less stable. The supply voltage
also defines the voltage swing limits at the output nodes of the
inverters. Due to this voltage scaling will be limited to levels
such that noise margin is still greater than the expected noise
in the circuit.
SIMULATION RESULTS
FIG 7. N-CURVE
The N-curve shown in FIG 7. is obtained for VDD = 1.2V ,
temperature =27C and cell ratio = 2 . The value of different
noise margins obtained from N-curve are shown in below
table
STATIC CURRENT
NOISE MARGIN
(SINM)
304.63uA
WRITE CURRENT
NOISE MARGIN
(WINM)
34.72Ua
READ MARGIN
494.179mV
WRITE MARGIN
552.268mV