Beanato MasterThesis 2009

Design of a Very Low Power SAR Analog
to Digital Converter
Giulia Beanato
Master Thesis
Lausanne, 14 August 2009
Microelectronic Systems Laboratory (LSM)
Supervisor:
Prof. Yusuf Leblebici
Coadvisors:
Armin Tajalli
Vahid Majidzadeh
Design of a Very Low Power SAR ADC
II
Abstract
Nowadays, a larger percentage of mixed-signal applications require energy limited
system solutions. Analog to Digital Converters (ADCs) are critical component in
most of such systems, hence the stringent requirements on energy consumption
requests the ADC design to be low power. Among various ADC architectures, we
chose to implement a Successive Approximation Register (SAR) ADC that is one of
the best suited for low power. We target a resolution of 8-bit and a power
consumption of few micro Watts. The SAR ADC is implemented in UMC 90nm
CMOS technology with a power supply of 1.2V.
The use of a differential input structure allows avoiding common-mode errors. A
comparison between different DAC topologies led us to choose a binary weighted
switched capacitor array topology for the D/A converter to have less power
consumption. A new approach using Source-Coupled Logic operating in subthreshold
regime (STSCL) is used in order to implement an ultra low power comparator. The
comparator has two preamplifier stages and a latch, it can discriminate voltage
differences as small as 2mV, half of the LSB. The SAR control logic is implemented
with a top down approach, starting from the VHDL code and finally obtaining the
layout of the block. Front end Track and Hold circuit is avoided to decrease the power
consumed at the price of a lower conversion rate.
The simulations show that the converter has no missing codes working with a bias
current of 50nA and sampling at a frequency of 1.4 kS/s. Adding a Track and Hold
the sampling frequency would increase considerably without deteriorating the nonlinearity of the system over 1LSB. The power consumption for this sampling
frequency remains in the order 14uW.
III
Contents
Abstract ....................................................................................................................... III
Contents ...................................................................................................................... IV
List of Figures .............................................................................................................. V
List of Tables .............................................................................................................. VI
1
Introduction...................................................................................................- 1 1.1
Thesis Organization ..............................................................................- 1 2
ADC Architectures........................................................................................- 2 2.1
Topologies Comparison ........................................................................- 3 2.2
Successive Approximation Register ADC............................................- 6 3
Behavioural Model........................................................................................- 8 3.1
ADC Parameters ...................................................................................- 8 3.2
Simulink Model ....................................................................................- 9 3.3
Simulations Results.............................................................................- 12 4
SAR ADC Building Blocks ........................................................................- 13 4.1
90nm CMOS Technology ...................................................................- 13 4.2
Fully Differential vs. Single Ended ....................................................- 14 4.3
Digital to Analog Converter DAC Topologies ...................................- 15 4.3.1
Binary Weighted Switched Capacitor Array DAC.....................- 15 4.3.2
Junction-Splitting Capacitor Array .............................................- 17 4.3.3
Energy Efficient Charge-Redistribution DAC............................- 19 4.3.4
Serial Charge Redistribution D/A Converter..............................- 20 4.3.5
Circuit Choice and Design ..........................................................- 21 4.4
Comparator .........................................................................................- 24 4.4.1
Subthreshold Source-Coupled Logic ..........................................- 25 4.4.2
Design Approach ........................................................................- 26 4.4.3
Matching Considerations ............................................................- 28 4.4.4
Circuit implementation ...............................................................- 30 4.5
Level shifter ........................................................................................- 33 4.6
Track and Hold ...................................................................................- 33 4.7
Delay Cell ...........................................................................................- 35 4.8
SAR Logic ..........................................................................................- 36 4.8.1
VHDL Code ................................................................................- 36 4.8.2
Synthesis .....................................................................................- 41 4.8.3
Place & Route .............................................................................- 44 5
Experimental Results ..................................................................................- 45 5.1
Comparator .........................................................................................- 45 5.2
Mismatch effects on ADC parameters................................................- 47 5.3
Signal to Noise Ratio ..........................................................................- 48 5.4
DAC ....................................................................................................- 49 5.5
Input/Output Characteristic.................................................................- 50 5.6
Current and power considerations ......................................................- 52 6
Conclusions.................................................................................................- 55 6.1
Future work.........................................................................................- 56 References...............................................................................................................- 57 -
IV
Appendix I.-60Appendix II.......-63Appendix III......-67Appendix IV..-70Appendix V...-71Appendix VI..-75-
List of Figures
Figure 1: Analog-Digital Conversion .......................................................................- 2 Figure 2: Flash ADC Block Diagram .......................................................................- 3 Figure 3: SAR ADC Block Diagram ........................................................................- 4 Figure 4: Delta Sigma ADC Block Diagram ............................................................- 4 Figure 5: Folding and Interpolating ADC Block Diagram .......................................- 5 Figure 6: Simplified N-bit SAR ADC architecture...................................................- 6 Figure 7: SAR operation (4-bit ADC example)........................................................- 7 Figure 8: input/output characteristics........................................................................- 8 Figure 9: Simulink Model.......................................................................................- 10 Figure 10: SAR Logic Simulink Model..................................................................- 10 Figure 11: Comparator Simulink Model.................................................................- 11 Figure 12: Capacitor Array Simulink Model ..........................................................- 11 Figure 13: Monte Carlo simulation results for capacitance mismatch ...................- 12 Figure 14: Performances vs. leakage power in 90nm technology ..........................- 13 Figure 15: Waveforms for single ended signal and fully differential signal ..........- 14 Figure 16: Single ended binary weighted switched capacitor array DAC..............- 15 Figure 17: (a) SAR ADC using J_S capacitor array. (b) the ith sub-capacitor section of
the J_S capacitor array ....................................................................................- 17 Figure 18: How to make the desired capacitance ratio for the J_S capacitor array - 17 Figure 19: Energy efficient charge redistribution DAC for SAR application ........- 19 Figure 20: Serial charge-redistribution DAC..........................................................- 20 Figure 21: Illustration of A/D conversion sequence for Vx/Vref=13/16..................- 21 Figure 22: DAC Circuit Schematic.........................................................................- 22 Figure 23: Equivalent sub-circuit of MOM Capacitor Model ................................- 23 Figure 24: Switch Circuit Schematic ......................................................................- 23 Figure 25: On-state conductance of MOS switch vs. input signal for a low supply
voltage.............................................................................................................- 24 Figure 26: Power vs. Frequency [] (left) and Normalized ADC Energy vs. Supply
Voltage [] (right). ............................................................................................- 24 Figure 27: STSCL circuit of the comparator, and replica bias circuit ....................- 25 Figure 28: Sigma vs. Size for differential pair and PMOS load .............................- 29 Figure 29: Sigma vs. Size for the current mirror ....................................................- 30 Figure 30: Comparator circuit schematic................................................................- 31 Figure 31: Simplified Schematic of the Preamplifier .............................................- 31 Figure 32: N-mirror circuit schematic ....................................................................- 32 Figure 33: P-load circuit schematic ........................................................................- 32 Figure 34: Level Shifter circuit schematic..............................................................- 33 Figure 35: External driving circuit for the analog differential input ......................- 34 Figure 36: Delay Cell circuit schematic..................................................................- 35 -
Figure 37: Transient Response of the delay cell.....................................................- 36 Figure 38: SAR logic block ....................................................................................- 37 Figure 39: State diagram corresponding to the SAR logic behavior ......................- 39 Figure 40: Simulated logic behavior-Waveforms...................................................- 40 Figure 41: Synthesized gate level schematic ..........................................................- 41 Figure 43: SAR logic after Place & Route..............................................................- 44 Figure 44: Gain and Phase of the preamplifier .......................................................- 46 Figure 45: Comparator Transient Response for a differential input of 400mV and
4mV.................................................................................................................- 46 Figure 46: DNL and INL - real capacitors..............................................................- 47 Figure 47: DNL and INL - real switches ................................................................- 48 Figure 48: Power spectrum for the real circuit. ......................................................- 48 Figure 49: Transient response of the output of the DAC........................................- 49 Figure 50: DNL working with 50nA of bias current at a frequency of 8kHz........- 50 Figure 51: Input-Output Characteristic...................................................................- 51 Figure 52:INL for 100 points per LSB ...................................................................- 51 Figure 53: INL/DNL working with 10nA of bias current at a frequency of 20kHz - 52
-
List of Tables
Table 1: Comparison between published data ..........................................................- 5 Table 2: 90nm vs. STSCL after synthesis...............................................................- 43 Table 3: Current versus a change in frequency.......................................................- 53 Table 4: Current versus a change in bias current for different frequencies ............- 53 Table 5: Current versus a change in bias current for different frequencies ............- 54 -
VI
Introduction
Introduction
In the past few years, more and more applications are built with very stringent
requirements on power consumption. For electronic systems, such as wireless systems
or implantable devices, the power consumption is becoming one of the most critical
factors. The stringent requirements on the energy consumption increase the need for
the development of low voltage and low power circuit techniques and system building
blocks.
Analog-to-Digital Converters (ADCs) translate the analog quantities into digital
language, used in information processing, computing, data transmission and control
systems. ADCs are key components for the design of power limited systems, in order
to keep the power consumption as low as possible.
In this work, we describe the design of a very low power Successive Approximation
Register (SAR) Analog-to-Digital data Converter and its peripheral circuits (bias
generator, current mirrors, etc.). The goal is to reach a total power consumption of
few -Watts.
The ADC is implemented in a deep sub-micron CMOS technology. At circuit level,
we also use a new circuit technique, the Sub-Threshold Source Coupled Logic,
STSCL logic, in order to decrease the current density. This topology allows adjusting
the power consumption playing on the bias conditions.
1.1
Thesis Organization
The report starts explaining the working principle of an Analog to Digital Converter
and the comparison of different possible topologies of ADCs. Then the operation of a
SAR ADC is described. The behavioral model implemented in Matlab is described in
Chapter 3, together with the simulations that show how the converter is affected by
the most important non-idealities of the circuit.
In Chapter 4 we talk about the building blocks of the proposed SAR ADC. It is also
explained how to choose the topology, and the design approach is explained. Then we
talk about the digital block describing the code and the steps to obtain the final layout.
The results of the simulations on the entire circuit are explained in Chapter 5 and at
the end, in chapter 6, the conclusion and future improvements are presented.
-1-
ADC Architectures
ADC Architectures
Analog to Digital Converter (ADC), is an electronic circuit that converts continuous

analog signals into discrete values.
An analog signal needs to be quantized in order to be converted in a digital one. An
analog signal can take infinite values; quantization consists in the substitution of these
infinite values into discrete and finite amounts of values. In Figure 1 is shown an
example of conversion. The input signal varies between 0 and FS (full scale), and its
converted in a digital word of N-bits.
Figure 1: Analog-Digital Conversion
The resolution of an ADC is the number of discrete levels that it can produce at the
output. The resolution is expressed in bits, for a resolution of N-bits, there are 2 N
digital values allowed. The resolution is also defined as the minimum voltage
difference between two analog signals coded into two adjacent levels (LSB).
-2-
2.1
ADC Architectures
Topologies Comparison
In this chapter we compare some different topologies to choose the most suitable for
us. In ADC design, the trade off between speed and power consumption is one of the
most important.
Flash ADC
Flash ADC (Figure 2, [1]), sometimes called parallel ADC, is the fastest type of
converter, but has limited resolution, high power dissipation and relatively large chip
size [2]. The main reason for the high power consumption is the large number of
comparators. For an N-bit converter, we would need (2N-1) comparators, this means
that the number of comparators increases exponentially with the number of bits. The
comparator is one of the most power hungry components in ADC.
Focusing the attention on limit the power dissipation, different topologies that
decrease the number of comparators needed, or avoid that block, should be taken in
consideration.
Figure 2: Flash ADC Block Diagram
-3-
ADC Architectures
SAR ADC
Successive Approximation Register ADC (Figure 3) represents the majority of the

ADC market for medium to high resolution. This topology requires just one
comparator; an N-bit SAR ADC will require N comparison periods and will not be
ready for the next conversion until the current one is complete. This topology is
expected to allow the lowest power dissipation, but paying the price with the slowest
sampling rate [3].
Figure 3: SAR ADC Block Diagram
Sigma-Delta ADC
A Sigma-Delta ADC (Figure 4) contains very simple analog electronics (a

comparator, voltage reference, a switch and one or more integrators and analog
summing circuits), and quite complex digital computational circuitry. Sigma-delta
converters trade speed for resolution. The need to sample many times (at least 16
times and often more) to produce one final sample dictates that the internal analog
components in the sigma-delta modulator operate much faster than the final data rate.
The digital decimation filter is also a challenge to design and generally consumes a
larger silicon area than a simple output decoder.
Figure 4: Delta Sigma ADC Block Diagram
-4-
ADC Architectures
Folding and Interpolating ADC
Folding and Interpolating ADC (Figure 5) have been applied in moderate to highresolution and high-speed applications. The folding ADC is a type of analog preprocessing to reduce the number of comparators used in flash ADC. The number of
comparators is reduced by the number of fold repetitions [4]. The interpolating ADC
can reduce the number of the input amplifiers and lower the input capacitance.
In this topology the mismatch in the input differential amplifier induces a large offset,
which destroys the linearity of the ADC and limits the resolution. This can be avoided
using transistors of large area and large bias currents [5], but in this way, power
consumption increases.
Figure 5: Folding and Interpolating ADC Block Diagram
Comparison between published data

Table 1: Comparison between published data
Topology
Folding
and/or
Interpolating
ADC
Sigma Delta
ADC
Flash
ADC
SAR
ADC
Ref.
Bits
Ref [6]
Ref [7]
Ref [8]
Ref [9]
Ref [10]
Ref [11]
Ref [12]
Ref [13]
Ref [14]
Ref [15]
Ref [16]
Ref [17]
Ref [18]
8
10
8
6
6
6
6
8
10
5
Sampling
Rate
70 MS/s
40 MS/s
30 MS/s
50 MS/s
4 MS/s
1.5 MS/s
1 MS/s
1.2 GS/s
1.3 GS/s
1 MS/s
200 kS/s
1 MS/s
250 MS/s
-5-
Power
Vdd
Technology
45 mW
65 mW
18 mW
20 mW
140 W
40 W
80 W
90 mW
600 mW
7 W
2.5 W
1.9 W
1.2 mW
3.3 V
5V
1.8 V
1V
1V
0.9 V
0.7 V
1.5 V
1.8 V
0.5 V
0.9 V
1V
0.8 V
0.8 m
0.6 m
0.18 m
0.35 m
90 nm
0.5 m
0.18 m
0.13 m
0.25 m
90 nm
0.18 m
65 nm
65 nm
ADC Architectures
The data in the table shows that the SAR ADC is the one that allows the lower power
consumption. The price to pay is the sampling rate, that is the lowest with respect to
the other topologies.
2.2
Successive Approximation Register ADC
Comparing Successive Approximation Register, Flash, Folding and Interpolating and

Sigma-Delta ADCs, the SAR ADC seems allowing the lowest-power consumption.
This architecture has the advantage to be very simple; it implements the binary search
algorithm.
Power dissipation scales with the sample rate, unlike flash ADCs that usually have
constant power dissipation versus sample rate. This is especially useful in low-power
applications. Moreover SAR ADC does not contain an operational amplifier; that are
generally power-hungry, it needs just one comparator that consume much less power
than operational amplifiers.
SAR ADC has four mains building blocks (Figure 6, [2]):
- Sample-and-Hold Stage (S/H)
- Digital-to-Analog Converter (DAC)
- Comparator
- Successive Approximation Register (SAR)
Figure 6: Simplified N-bit SAR ADC architecture.
The basic functionality of a SAR ADC is very simple (Figure 7). The analog input
voltage VIN is sampled by the Track & Hold block. To implement the binary search
algorithm, the N-bit register is first set to midscale setting the MSB to '1' and all other
-6-
ADC Architectures
bits to 0. This forces the DAC output, VDAC, to be half of the reference voltage,
VREF/2. VIN is then compared with VDAC, if VIN is greater than VDAC, the comparator
output is logic 1 and the MSB of the N-bit register remains at 1. Conversely, if VIN is
less than VDAC, the comparator output is logic 0 and the MSB of the register is cleared
to 0. The SAR control logic then moves to the next bit down, forces that bit high, and
does another comparison. The sequence continues all the way down to the LSB. Once
this is done, the conversion is completed, and the N-bit digital word is available in the
register [19].
Figure 7: SAR operation (4-bit ADC example).
SAR ADC works with two different clock frequencies. The first clock is an input of
the chip, and its frequency, fint, is the one at which the internal circuit works. The
second clock drives the Sample and Hold in order to sample the analog input value.
This second clock is internally created by a frequency divider; it should be X times
slower the first one, where X is the number of comparison periods needed from the
control logic to complete a conversion. The conversion rate is determined by this
second clock, an N-bit SAR ADC will require minimum N periods and will not be
ready for the next conversion until the current one is complete.
-7-
3
3.1
Behavioural Model
Behavioural Model
ADC Parameters
In an ADC there are several important parameters that allow evaluating its
performances. In our project we mainly focus our attention on some of them.
Figure 8: input/output characteristics
DNL
Differential Non-Linearity error is defined as the difference between an actual step

width and the ideal value of 1LSB.
full _ scale _ range
(3.1)
number _ of _ bits
If an ideal ADC is considered, its differential non-linearity is 0LSB, this means that
LSB =
each analog step equals 1LSB and the transition values are spaced exactly 1LSB
apart. When the DNL error is less than or is equal to 1LSB, a monotonic transfer
function with no missing codes is guaranteed. DNL errors of less than 1LSB or
larger than +1LSB correspond to a missing code.
DNL can be defined as:
a a
DNL = d +1 d 1
LSB
where a is the physical value corresponding to the digital output code d .
(3.2)
INL
Integral Non-Linearity error is most relevant parameter for the overall accuracy of the
converter. INL is the maximum deviation of a transition point of a conversion to the
-8-
Behavioural Model
corresponding transition point of an ideal conversion. It means the deviation, in LSB,

of the real transfer function from a straight line.
INL represents cumulative DNL errors. It summarizes the total non linearity of the
converter.
j 1
INL j = DNLi
(3.3)
i =1
SNR
The Signal to Noise Ratio of an ADC is the ratio of the signal power to the non-signal
power:
SNR = 10 log
Psignal
(3.4)
Pnoise
Non-signal power includes thermal noise, quantization noise, and other residual errors
measured in the Nyquist bandwidth (fsample/2) of the ADC. SNR is typically defined
for a continuous sine wave signal applied to the ADC input. The ADC converts the
signal into discrete output levels, but there is a difference (or error) between the
actual sine wave value and the quantized level. For an ideal converter
SNR = (1.763 + 6.02 b ) dB

where b is the number of bits of the data converter.
(3.5)
SFDR
Injecting a pure sine wave into the system, the output displays a number of peaks.
The Spurious Free Dynamic Range measures the ratio between the power of the
fundamental and the power in the largest non-fundamental peak.
3.2
Simulink Model
As first step of the project, a MATLAB-based system level analysis is performed. A

Simulink model of the ADC has been implemented in order to simulate its behavior
and extract some parameters.
This model (Figure 9) simulates the behavior of a single ended SAR ADC; the input
is compared with the output of the DAC, than the result of the comparison is used by
the SAR to elaborate the next step.
-9-
Behavioural Model
Figure 9: Simulink Model
The logic block (Figure 10) has been implemented using two shift register in order to
perform the successive approximation routine [20]. Each shift register is composed by
a chain of nine D Flip-Flops. The shift register on the top is used as a sequencer and
is synchronous with the internal clock. The bottom register stores the conversion
value.
Figure 10: SAR Logic Simulink Model
- 10 -
Behavioural Model
The non-idealities of the real ADC with respect to the ideal one that mostly affect his
performances are the offset of the comparator, the capacitor mismatch and the nonideal reference voltage.
In the comparator model (Figure 11), the two inputs are subtracted, and then a
constant value is added to their difference to model the offset of the real comparator.
The result is than multiplied by a gain that represents the amplification stage. Then
the result is saturated to full logic levels and compared to zero to define which of the
two inputs is the highest one.
Figure 11: Comparator Simulink Model
In the DAC model (Figure 12) each capacitor has been modeled as a gain which is
equal to the capacitor value. The mismatch between capacitors has been modeled as a
small random value added to each gain. The output of the DAC is created by adding
the contribution of each stage.
Figure 12: Capacitor Array Simulink Model
- 11 -
3.3
Behavioural Model
Simulations Results
For our 8bits ADC, ideally
SNR = (1.763 + 6.02 b ) = 49.92dB

(3.6)
For SNR and SFDR calculations, a low frequency sinusoidal signal is injected in the
circuit. While for INL and DNL calculation, at the input of the converter we give a
ramp with a very low slope, in order to have more than 10 samples per each LSB.
In order to see the effect of the non-idealities of the ADC, comparator offset, nonideal reference voltage and capacitor mismatch, Monte Carlo simulations have been
performed using Matlab. In Appendix I the Matlab codes for INL, DNL, calculations
can be found, while the one for SNR and SFDR is in Appendix II.
The error is modeled as a random value added to the ideal one. Ten points are taken
into account, corresponding to a linear increase of the variance of the random error
from zero to 1%. The code performs 100 simulations per each point, than takes the
mean value of all the result. In Figure 13 is shown how INL, DNL, SNR and SFDR
changes with the increasing mismatch of the capacitors.
Figure 13: Monte Carlo simulation results for capacitance mismatch
In Appendix III are collected all the graphs that show the results for the simulations
of the three non idealities. As predicted by theory, increasing the mismatch cause a
almost linear increase in the differential and integral non-linearity, INL and DNL;
while the SNR and the SFDR decreases.
- 12 -
4
4.1
SAR ADC Building Blocks

90nm CMOS Technology
The whole circuit is implemented in 90nm technology [21]. In order to limit the
current flowing through the circuit, MOS devices working in subthreshold region are
used.
At 90nm, leakage power management starts to be an essential issue in design process.
As geometries scale down, also voltages scale down, but the gain in performance can
be obtained just decreasing also the threshold voltage. The drawback comes from the
leakage current, which increases exponentially as threshold voltage, Vth, reduces. In
90nm technology the gate oxide gets thinner, it decreases as low as 12, and it causes
an increase in leakage current as well. Decreasing thickness to such value leads to the
need to reduce the voltage across the gate or the electric field would be too high for
the insulating material. The relationship between performance and leakage power for
typical 90nm processes is shown in Figure 14.
Figure 14: Performances vs. leakage power in 90nm technology
The sub-threshold leakage current increases exponentially with every 65mV decrease
in threshold voltage. This increase in leakage directly affect the power dissipation,
hence, new design methodologies are needed in order to reduce leakage power. This
is the reason for which in 90nm technology, different threshold types of PMOS and
- 13 -
NMOS transistors are available. Creating separate cells using these different
transistor types allows to have the same functionality but with different speed and
leakage characteristics. Low Vth transistors led to higher leakage, while high Vth
decrease the leakage current through the transistor.
In the technology library that we are using, the UMC90, several types of NMOS and
PMOS can be found. In our design we mostly use LLHVT12 transistors, which are
high Vth transistors with low leakage, which work with a supply voltage of 1.2V.
4.2
Fully Differential vs. Single Ended
From the input signal point-of-view, an ADC can be either a single ended signal or a
fully differential signal. A fully differential analog signal path has been chosen due to
several advantages with respect to the single ended one.
In single-ended all signals are referred to the common ground. The dynamic range is
subjected to DC offset and noise through the signal path that can decrease it. In fully
differential, the two differential inputs are 180 out of phase, the difference in voltage
between these two signals is considered. In this way the dynamic range is doubled
with respect to the single ended signal (Figure 15), and a maximum noise rejection is
achieved. Doubling the dynamic range leads to a VLSB doubled, that leads to more
relaxed constraints for the design of the comparator. The differential architecture
allows a good dynamic common mode rejection. Moreover fully differential topology
can reduce the effects of charge injection caused by parasitic capacitances, hence the
precision improves.
Figure 15: Waveforms for single ended signal and fully differential signal
- 14 -
4.3
Digital to Analog Converter DAC Topologies
In charge-redistribution SAR analog to digital converter, a large amount of power is

dissipated in switching the capacitor array. For this reason, several new DAC
topologies have been implemented in order to reduce the switching energy.
Here we compare several single ended topologies in order to choose the best one for
our ADC, then, it will be implemented fully differential.
In order to have an idea and compare the energy dissipation of the different
topologies, the case of Vin=1.2V is taken in account. VDD is set at 1.2V and the unit
capacitance is C0=100fF. The output digital code should be eight bits at logic 1.
4.3.1
Binary Weighted Switched Capacitor Array DAC
Figure 16: Single ended binary weighted switched capacitor array DAC
This DAC [22] (Figure 16) is an array of binary weighted capacitors plus one
additional capacitor of weight corresponding to the last significant bit (LSB), and
switches that connect the capacitor bottom plates to three different voltages: VDD, Vref
and ground. For a n-bit DAC, the value of the capacitors are,
Ci = 2i 1 C0 , i {1,..., n}
(4.1)
The conversion is performed in three operation modes. In the first, the sample
mode, the top plate is connected to ground and the bottom plates to the input voltage
Vin. In the hold mode, the top grounding switch is then opened, and the bottom
plates are connected to ground. Since the charge on the top plate is conserved, its
potential goes to -Vin. The redistribution mode, begins testing the value of the most
significant bit (MSB). This is done by raising the bottom plate of the largest capacitor
- 15 -
to the reference voltage Vref. Now, the circuit acts as a voltage divider between two
equal capacitances, so the voltage at the output of the DAC is:
VDAC = Vin +
Vref
(4.2)
2
VDAC is then compared with zero, if VDAC<0 it means that Vin>Vref/2 , hence the MSB
is set to 1. Otherwise, if VDAC>0 , Vin<Vref/2 , hence the MSB is set to 0. In this case
the largest capacitor is reconnected to ground. The conversion proceeds in this
manner until all the bits have been determined.
From the energy point of view, we consider:
The energy to charge Vin on Ctot= 256 C0. that is

1
Ein = Ctot Vin 2
2
The sum of the energy dissipated at each step, for step x:
1
Eref ( x) = Ceq ( x) (Vref V ( x 1)) 2
2
(4.3)
(4.4)
Where
Ceq =
C ( x) Cold ( x )
C ( x) + Cold ( x )
Cold ( x ) = Ctot C (i ))
i= x
(4.5)
(4.6)
And
1
V ( x 1) = Vref
C (i)
i= x
Ctot
(4.7)
MATLAB calculations show that the energy consumption for our particular case is
about 31pJ.
- 16 -
4.3.2
Junction-Splitting Capacitor Array
Figure 17: (a) SAR ADC using J_S capacitor array. (b) the ith sub-capacitor section of the J_S
capacitor array
The J-S capacitor array [23] (Figure 17) consists of a number of serially connected
sections each of which is composed of splitting capacitor. The desired Vout is created
by appending a sub-capacitor section to the previous capacitor array.
Figure 18: How to make the desired capacitance ratio for the J_S capacitor array
In Figure 18, the denominator and numerator represent Ctot and CH, respectively, can
be seen that Ctot is not constant, it increases during the conversion process. First, the
MSB, b0, is determined by comparing the input voltage with a half reference voltage.
The half reference voltage is achieved by using the two smallest capacitors, one
connected to the ground and the other connected to the reference voltage. Then, the
- 17 -
next voltage to be compared is made by connecting a sub-capacitor section, one at a

time.
The position of all the switches in the J-S capacitor array does not change during the
redistribution mode. Therefore, the required energy is determined by the final state,
which is the fundamental lowest level. This is an advantage with respect to the
conventional capacitor array, which consumes energy in every redistribution step.
Considering the energy dissipation for an output code all at 1, there are two
contributions:
The energy to charge Vin on Ctot= 256 C0. that is

1
(4.8)
Ctot Vin 2
2
is the sum of all the energies to charge Vref at each
Ein =
The energy to charge Vref
step. Considering the step x :

Eref ( x) =
1
Ceq ( x) (Vref V ( x 1)) 2
2
(4.9)
Where
Ceq =
C ( x) 2
2 C ( x)
(4.10)
and
1
V ( x 1) = Vref
C (i)
i= x
C (1) + C ( j )
(4.11)
j=x
and C(x) is the weighted capacitor of the stage x.

MATLAB calculations shows that the power dissipation of this DAC is the lowest, in
our particular case around 18pJ.
On the other hand, there are several drawbacks with this topology. The main problem
comes from the fact that floating switches and floating capacitors are needed. These
problems are due to the fact that the floating elements would be easily affected by
crosstalk with the others stages. This crosstalk can determine random levels that can
cause voltage breakdown of the devices, or unwanted closing of the switches. Also
the parasitic capacitance on the top plate and the one on the bottom plate are not
equal.
- 18 -
4.3.3
Energy Efficient Charge-Redistribution DAC
Figure 19: Energy efficient charge redistribution DAC for SAR application
In energy efficient charge redistribution DAC, [24], first, we reset to a state where the
MSB is high and all other bits are low. Next, Vin is sampled onto output VDAC. In a
single-ended ADC, VDAC is compared to Vhalf. The comparator decides if the MSB
should remain high or set low during the remainder of the conversion. Next, MSB-1
is set to high and the procedure is repeated, until N comparisons have been done for
N bits. The difference with respect to the traditional Charge Redistribution DAC is
that the voltage over Ceq is charged from 0 to V in n steps of
V
.
n
In this way, the dissipated energy is:

2
1
1
V
E = n Ceq =
Ceq V 2
2
2n
n
which is n times less than the one of the technique of one-step charge.
(4.12)
In theory, charging with n equidistant voltage steps always decreases the power by a
factor of n. In practice control overhead is added and there is only a net saving for
small values of n with large values of Ceq. A reasonable number of intermediate
steps to charge are three, while for an 8-bit DAC it is sufficient to use this multiple
steps charge technique for the 3 MSBs, while the supply voltage is used directly for
all other reference voltages, for which the energy dissipated is the typical:
E=
1
Ceq V 2
2
(4.13)
For our example, taking into account also the energy to charge Vin that is the same as
for the previous topologies, an energy consumption of about 25pJ is reached.
- 19 -
The intermediate voltage levels come from big capacitors CBIG1 and CBIG2 and
automatically converge to appropriate values due to repetitive DAC operation. This
implementation is allowed, because the accuracy of the intermediate steps does not
affect the accuracy of the DAC. The energy to charge the first time this big capacitor
and maintain them charged it is not been taken in consideration in our calculation, but
its value is not negligible, due to the big value of these capacitors. So it would
became a value to add to the dissipated energy.
4.3.4
Serial Charge Redistribution D/A Converter
Figure 20: Serial charge-redistribution DAC
In Figure 20 is shown a simplified schematic diagram the serial DAC circuit is shown
[25]. Capacitors Cl and C2 are nominally of equal value. Conversion is performed
serially the most significant bit (MSB) must be determined first. The control logic
then takes a particularly simple form since the DAC input string at any given point in
the conversion is just the previously encoded word taken LSB first.
For example, in order to obtain:
VDAC =
Vref
2
(4.14)
As first the capacitor C1 is precharged to the Vref by a momentary closure of S2.

Simultaneously, C2 is discharged to ground through S4. With S2, S3, and S4 open
switch, S1 is then closed momentarily to redistribute the charge. In this way on the
capacitors we obtain the desired VDAC that then will be compared directly with Vin.
Figure 21 shows how this DAC operates.
- 20 -
D/A
Conversion
Number
1
2
3
DAC Input Word

d3
dN-1
d1
d2
1
1
1
-aN
aN-1
a2
--aN
a3
---
aN-1
dN
---
aN
Comparator
Output
aN
aN-1
aN-2
TOTAL..
No. of
Charging
Steps
2
4
6
2N
N(N+1)
Figure 21: Illustration of A/D conversion sequence for Vx/Vref=13/16
The advantage of this topology is that we just need to charge the basic capacitance,
and then, during the redistribution step, no energy is dissipated. However for an N-bit
conversion, N ( N + 1) charging steps are required. This makes the sampling
frequency really low. In the case of an 8-bit SAR ADC, we would need 72 clock
cycles per each conversion, half for charging and half for the .redistribution.
Every step consume the same amount of energy, so the energy dissipated for one
conversion is
1 72
(4.15)
C0 Vref2
2 2
there are no peaks. The calculated energy for the case that we are taking in
E=
consideration comes out to be 25pJ.
4.3.5
Circuit Choice and Design
For the J-S capacitor array, taking in account advantage and drawbacks, the gain in
energy dissipation is not sufficient to compensate the problems that it can give. Also
the serial charge redistribution DAC is good in terms of energy consumption, but the
number of clock cycles to perform one conversion would deteriorate too much the
sampling rate. The energy efficient charge redistribution has a gain in energy
dissipation, but the two big capacitors would be a problem. Hence, the traditional
binary weighted capacitor array has been chosen.
Figure 22 shows the schematic of the ideal DAC.
- 21 -
Figure 22: DAC Circuit Schematic
- 22 -
The ideal capacitors have then been replaced with symmetric Metal Oxide Metal,
MOM, capacitors, the basic capacitance is chosen to be C0=100fF. MOM capacitors
rely on coupling capacitance between metal fingers running in parallel. We choose a
symmetric architecture, the equivalent circuit is shown in Figure 23.
Figure 23: Equivalent sub-circuit of MOM Capacitor Model
Using a configuration with the same value of parasitic capacitance on the top and the
bottom plate means that the architecture is basically symmetric in terms of the two
ports.
Each analog switch has been implemented connecting an NMOS in parallel with a
PMOS. The NMOS is driven by the signal coming from the logic block, while the
PMOS is driven by the inverted signal. The switch conductivity depends not on the
absolute potential of the control terminals, but on their potential relative to the others.
Whether the n- or the p-channel device carries more signal current depends on the
ratio of input to output voltage. Because the switch has no preferred direction for
current flow, it has no preferred input or output [26].
Figure 24: Switch Circuit Schematic
- 23 -
Figure 25: On-state conductance of MOS switch vs. input signal for a low supply voltage
4.4
Comparator
The comparator is the block that affects the most the total power consumption of the
SAR ADC, it is composed by preamplifiers and latch. Most of the analog power is
consumed by the comparator and it is almost constant with respect the clock
frequency while depends on the value of the supply voltage (as shown in figures 26).
Regarding the digital power and the reference power, both are dynamic. They scale
with the clock frequency and decrease reducing the supply voltage.
Figure 26: Power vs. Frequency [27] (left) and Normalized ADC Energy vs. Supply Voltage [28]
(right).
- 24 -
In our project we use a new topology for the comparator in order to make the velocity
of the comparator independent from the supply voltage with minimum power
consumption (Figure 27, [9]).
Figure 27: STSCL circuit of the comparator, and replica bias circuit
4.4.1
Subthreshold Source-Coupled Logic
Source-Coupled Logic [29] [30] allows reducing the sensitivity of the circuit to the
supply voltage variation. Hence the speed of operation of this logic is independent
from the supply voltage while can be controlled by acting on the tail bias current.
Moreover, using transistors operating in weak inversion, subthreshold regime, the
current density is very low while the ratio between transconductance and bias current,
gm/Id , is maximum. STSCL logic gates can operate biased with a very small tail
current which value can range from 10 pA to 100 nA. It is been shown that in STSCL
circuits the power consumption can be reduced to 1fJ/gate, this makes this approach
very suitable for low voltage-low power applications.
PMOS Load Devices
When the bias current is reduced to very low values, the load resistance should be
proportionally increased in order to maintain the same voltage swing at the output,
following the relation:.
VSW = RL I SS
- 25 -
(4.16)
Taking into account that our ISS is in the order of tenth of nA and VSW should range
between 200-500mV, RL needs to be in the order of several M. In order to reach this
value of resistance and control it accurately with ISS, the conventional PMOS
transistors biased in triode region would need a very long channel length. A novel
structure of integrated high value resistors, HVR [31], implements very large value
resistors with PMOS biased in subthreshold regime. The PMOS bulk, that is an
isolated N-well, is connected to its drain. Increasing VSD the threshold voltage is
modified, hence the drain current, ID, increases. By keeping VSD higher than zero and
VSG (source-gate voltage) low, very high value resistors can be obtained maintaining
the device sizes very small.
Replica Bias
The value of the PMOS load resistor can vary between hundreds of K and 1G,
and it depends on the gate voltage VG of the device. In order to bias the load devices
to have the right resistance and control VSW at the output of the comparator, a replica
bias circuit is used (real schematic in Appendix IV, simplified schematic in Figure
27). The replica bias circuit should be well matched to the SCL gates, conversely, we
would have a variation with respect to the desired operating point that is not
negligible, and the output voltage swing would be different than the desired one. In
terms of accuracy, the amplifier is a critical component; we need it to provide enough
gain with a very low offset.
4.4.2
Design Approach
Here we design the preamplifiers of our comparator; we base our calculation on the
Enz-Krummenacher-Vittoz (EKV) model, which is a continuous model developed for
MOS transistors. Its equations are valid in all regimes of operation, above or below
threshold, as well as in saturation, for this reason, the EKV model is highly suitable
our low-voltage circuit that operates in subthreshold regime [32].
The MOS digital circuits operate in subthreshold regime when the supply voltage is
lower than the threshold voltage Vth of the transistors. The drain current of an NMOS
transistor operating in this regime is given by:
- 26 -
V Vth
VDS
(4.17)
I DS = I ss exp GS
1 exp
nU T
UT
where n is the subthreshold slope factor; UT is the thermal voltage; VGS and VDS are
the gate to source and drain to source voltages, respectively. The current Iss is given
by:
W
(4.18)
L
where is the mobility of carriers, Cox is the gate oxide capacitance per unit area and
I ss = 2 n Cox U T2
W/L is the aspect ratio of the transistor. The drain current of a MOS transistor in
subthreshold region shows exponential dependence on VGS and VDS, slope factor and
the operating temperature. IDS=0 when VDS= 0, and reaches its maximum value and
saturates with VDS higher than a few UT .
For the PMOS load devices
V
I SD = I SD0 exp SD
nU T

VSD
exp

UT
(4.19)
where
V
I SD0 = I 0 exp SG
n UT
(4.20)
The voltage swing at the output is

Vsw = I ss RL
(4.21)
and it should be large enough to guarantee to switch completely the current in the
input transistors of the next stage. It means that, being in subthreshold region, we
need
Vsw 4 n UT ( 200 300 ) mV

(4.22)
The gain of each stage depends on the voltage swing Vsw. In order to calculate the
voltage gain, the transconductance of the input differential pair can be expressed by:
gm =
I ss
2 n UT
1
Vin
cosh 2
2 n U T
(4.23)
where Vin is the input differential voltage.

It can be shown that there is an upper bound for the differential gain of the circuit for
Vin = 0V that can be expressed as
Av ,max =
np
nn ( n p 1)
- 27 -
(4.24)
4.4.3
Matching Considerations
We implement a fully differential 8-bit SAR ADC in 90nm technology. It has a

differential input voltage range of 1.2V and the supply voltage is 1.2V. The
converter requires 9 clock cycles per conversion.
The minimum input voltage difference that has to be discriminated is:
input _ dynamic _ range 2.4
(4.25)
=
= 9.375mV
2n
256
When a real comparator compares the two signals at its input, the output is not
VLSB =
exactly equal to the difference of the two [33] [34]. This is due to the comparator
offset voltage Vos, which depends on the matching properties of the used technology.
Since Vos is a random variable, it directly influences the differential nonlinearity
(DNL) and the integral nonlinearity (INL). Hence, as first step for the design, we
should derive the offset voltage standard deviation, os, that guarantees
3 os
so we need os 1.5625mV .
VLSB
2
(4.26)
Taking into account a single preamplifier that is part of the comparator, the offset
voltage has two main contributions: Vos = f ( differential _ pair , PMOS _ load ) .
We know the relation with the threshold voltage difference VT:
VT
Vos VT
nn U T
The mismatch formula for the differential pair is:
Vos U T
=
2
os
AV2T
( 5mV m )
W L
where AVT is a process dependent parameter.
(4.27)
W L
(4.28)
The accuracy of the conversion is proportional to the matching of the transistor. In

order to improve the system accuracy, longer devices are required, but in this way,
the capacitive loading of the circuit nodes increases, hence, more power is required to
reach certain speed performances:
Speed
gm
2 Cgs
(4.29)
It can be proved that
Speed Accuracy 2
1
Power
Cox AVT
- 28 -
(4.30)
hence we need to size the transistor in order to find the best compromise that allows
to fulfill the constrain on the offset, without decrease the speed below a certain lower
limit.
Several Monte Carlo simulations of the comparator have been performed in
CADENCE. The two contributions to the standard deviation are taken in
consideration separately. We need
3
2
2
os2 = PMOS
+ diff
_ pair (1.5625 10 )
(4.31)
First, we fix the size of the PMOS load and the current mirror to big values,
WPload 10um
WMirr 10um
,
and we sweep the size of the differential pair
=
=
5um
5um
LPload
LMirr
maintaining a ratio
WDiff
LDiff
= 1 . For every value of the ratio, 50 runs are performed.
For the PMOS load we repeat the same procedure, we sweep the ratio
maintain fix
WDiff
LDiff
WPload
and
LPload
W
10um
10um
and Mirr =
.
5um
LMirr
5um
In Figure 28 the results are plotted, using these graph we can determine the maximum
WL for the sizing the transistors.
Differential Pair
P Load
30
Sigma Offset [mV]
Sigma Offset [mV]
35
25
20
15
10
5
0
0
10
20
30
40
20
18
16
14
12
10
8
6
4
2
0
0
10
20
30
40
W*L [um]
W*L [um ]
Figure 28: Sigma vs. Size for differential pair and PMOS load
Starting from these results, others simulations has been performed to find the best
compromise between the offset and the rising time of the comparator, that affect the
allowable maximum working frequency. We define that we need to be able to convert
without missing codes at 2KSample/s at least. Taking in account that the internal
working clock is nine times faster than the sampling rate, in order to reach
- 29 -
2KSample/s an internal frequency of 18KHz is needed. This means that the rising
time should be at least less than a quarter of the period.
The mismatch of two closely spaced, identical MOS transistor doesnt affect just the
W
comparator offset, but also the current factor difference, = Cox

L
The threshold voltage difference and the current factor difference have a low
correlation, so are usually modeled as independent random variables.
Under nominal operation, the output current of the mirror is equal to the input current,
I out = I in , where Iout corresponds to our bias current Ib. In reality, the mismatch
between the transistor of the current mirror cause a little difference, so I out = I in + I .
Monte Carlo simulations have been performed in the same manner as for the voltage
offset. For a fix bias current, we have swept the size of the transistor of the current
mirror and fixing
W
WPload 10um
10um
and Diff =
.
=
5um
LPload
LDiff
5um
The results are shown in figure 29.
Mirrored Current [nA]
N Mirror
18
16
14
12
10
8
6
4
2
0
0
10
15
20
W*L [um]
Figure 29: Sigma vs. Size for the current mirror
4.4.4
Circuit implementation
The comparator is implemented with two preamplifier stages, and one latch. The
preamplifiers amplifies the differential signal, than the latch establish full logic levels
and synchronize the decision of the comparator with the other blocks.
- 30 -
Figure 30: Comparator circuit schematic
Each preamplifier consists of an N-mirror, a differential pair and the P-load. The
simplified schematic of a single preamplifier is shown in Figure 31.
Figure 31: Simplified Schematic of the Preamplifier
- 31 -
Figure 32 shows the circuit implementation of the N- mirror, its transistors have been
sized in order to maintain the error on the current due to the transistor mismatch less
than 2%. The high Vth transistors are placed is series in order to create a transistor
with a high length, L. In this way, the preamplifier is less affected by the unwanted
noise on ground.
Figure 32: N-mirror circuit schematic
In the following figures the P-load and the whole preamplifier are shown. As
explained before, the Bulk of the PMOS is connected to the Drain in order to create a
large resistance value.
Figure 33: P-load circuit schematic
- 32 -
The two capacitors of value C1 and C2 are used to model the parasitic capacitance
and their values are calculated as:
C1 = 2 ( L p + W p ) C j ( perimeter )
(4.32)
C2 = Lp Wp C j ( area )
(4.33)
and
4.5
Level shifter
This block is used in order to be sure that the output of the comparator saturates to
full logic levels for any input values difference. This avoids unwanted problems that
can rise if the logic block is driven by values too different from the logic levels 1.2V
and 0V.
The circuit is shown in Figure 34, the first stage amplifies the difference between the
inputs, than the first inverter produces the output corresponding to the saturated logic
level for inP, and the last inverter the one for inN.
Figure 34: Level Shifter circuit schematic
4.6
Track and Hold
In the typical configuration of the SAR ADC, the Track and Hold is one of the basic
building blocks. In our SAR ADC we choose to use the capacitor array as sampling
capacitor to acquire the analog signal during the sampling phase, that least one clock
- 33 -
period, and avoid this block. The reasons of this choice are several, first of all the
Track & Hold circuit would need a switch and a capacitor, but also a voltage follower
to adapt the impedance. This would add consumption of power that can be avoided.
In order to charge directly on the DAC capacitors, we decide to define our
specification on the sampling frequency in order to have a driving impedance
relatively high. In this way, our A/D converter can be directly driven by an external
compatible impedance source, as shown in Figure 35, without gain error.
Figure 35: External driving circuit for the analog differential input
We define that the driving impedance should be at least Rd 1M . The DAC basic
capacitor is C0 100 fF , so the total capacitance that can be seen at the input of the
DAC for each input is Ctot = 128 C0 = 12.8 pF . We can easily calculate the time
constant to charge the capacitor array as
= Rd Ctot 12.8 s
(4.34)
The maximum error that we can tolerate is half of the LSB, that normalized
correspond to 0.002. Hence we put a constrain on the normalized error that is:
=e
0.002
(4.35)
It is straightforward that
Tmin = ln
Hence the minimum period is Tmin 80 s .
= 6.21
(4.36)
From these calculations we can define a specification on the maximum allowable

sampling rate of
f sampmax =
1
kSample
1.4
9 Tmin
s
- 34 -
(4.37)
4.7
Delay Cell
A delayed clock is needed by the logic block. The desired delay is obtained by
cascading a number of inverters. In this way it is possible to obtain the desired signal
that is delayed with respect to the internal clock, maintaining the same period and
duty cycle.
Figure 36: Delay Cell circuit schematic
We need inverter cells with high delay; this can be reached by increasing the length
value L of the MOS transistors due to the relationship:
PHL
PLH
Ln
Wn
Lp
(4.38)
(4.39)
Wp
where PHL and PLH are the high-to-low and low-to-high propagation delay times of a
CMOS inverter. The drawback of using long channel devices is that the charge
injection increases, so, the output voltage can have spikes above and below the
desired values. These spikes should be maintained small to avoid a degradation of the
chip, so the last two inverters are short channel devices. These two last inverters also
allow a short rise and fall times of the delayed clock signal.
Simulations of the circuit shows that we can obtain a delay of about 3ns between 50%
of the rising edge of the input clock and the 50% of the rising edge of the output
- 35 -
delayed clock. The rising time of the delayed clock calculated between 10% and 90%
of the rising edge is 45ps.
Figure 37: Transient Response of the delay cell
4.8
SAR Logic
The logic control block of the ADC has two important aims. It sets the switches in
function of the current state of the conversion and the output of the comparator;
moreover, it computes and stores the digital converted value to be given as output at
the end of the conversion. The Successive Approximation Register has been
implemented in VHDL. The code is then synthesized, it means compiled and mapped
into the desired technology. As final step, the place & route allows to create the
physical layout for the circuit.
4.8.1
VHDL Code
The SAR logic is implemented as synthesizable VHDL model at the Register

Transfer Level, RTL level. The code can be found in Appendix V.
- 36 -
Figure 38: SAR logic block
The logic block is synchronous with the internal clock, CLK.

CLKD is the delayed clock; The switches in our circuit are not ideal, so, if we need to
close and open at the same time two of them there can be a little moment when both
two conduct. This can cause an unwanted short circuit. CLKD allows to drive the
switches that should be opened before the ones that should be closed.
CLKN is the inverse of the internal clock. The comparator reach full logic levels just
at the falling edge of the clock, hence we need to check the comparator output and
take a decision for the next bit when the clock is low. Our state machine is
synchronized with the rising edge of the clock. It is never good to be sensitive to both
edge of a signal, for this reason the negated clock, CLKN, is used in order to check
the comparison and set the bits of the digital converted value.
RST is the reset signal; it is asynchronous and active low. When the reset is released
and goes high, the rising edge of the clock is waited to enter in Sample mode.
SC is the Start Conversion; it should be set low to start a conversion. If SC goes high,
the current conversion is completed, then the converter remains in Sample mode until
SC back low and a new conversion can start.
IN_POS and IN_NEG are the output of the level shifter that brings the comparator
response.
At the output of the block there are the controlling signals for the switches of the
DAC, plus the converted value. The output digital value is available during the
Sample state, and remains fix until the next conversion is been performed and the
new converted value is ready.
The control signal that drives the switch that connects the dummy capacitor C0 to
ground goes high only during the Sample state. This signal is also given as output of
the chip as BUSY signal. When BUSY is high the conversion is completed and the
output data can be read.
- 37 -
In Figure 39 the simplified behavior of the logic is explained by a state diagram

should be highlighted that the signal V+ and V- are created internally in function of
the comparator outputs and the signal sel. They are equal to the comparator output if
sel is high, otherwise are the inverse.
In Figure 40 the simulated waveforms for the conversion of an input at half of the full
scale, are shown, the output digital value is 10000000.
- 38 -
STATE 8
STATE 1
SC=1
If V+<V- then
bit0=1
else bit0=0
SAMPLE
MODE
Charge Vref on the

MSB capacitors,C7,
all other capacitors
connected to gnd.
Vdac=-Vin+(Vref/2)
CLK=1'
&
SC=0'
CLKN=1'
CLKN=1'
CLK=1'
Bit7=1
If Vdac+>Vdacthen sel=1,Vin+(-)
Bit7=1 with
compared
Vref+(-) else sel=0,
Vin+(-) compared
with Vref-(+)
Start new conversion: Vin is

charged on the capacitor array
{C7,,C0}
Connect all
capacitors to Vin
Output the old converted digital

value, ConvVal. If sel=1 then
ConvVal=bit else
ConvVal=not(bit)
CLK=1'
CLK=1'
STATE 2
STATE 7
charge Vref on the

next capacitor,
C6, and
If bit6=0 then
connect to gnd C7
capacitor
If V+<V- then
bit1=1
else bit1=0
RST=1'
RST=0'
RST=0'
RST=0'
CLKN=1'
CLKN=1'
charge Vref on the
next capacitor,
C1, and
If bit1=0 then
connect to gnd C2
capacitor
RESET STATE
Reset all.
Connect all the
capacitances to
ground and open all
the other switches
RST=0'
If V+<V- then
bit6=1
else bit6=0
RST=0'
RST=0'
CLK=1'
CLK=1'
RST=0'
STATE 6
STATE 3
RST=0'
charge Vref on the
next capacitor,
C5, and
If bit5=0 then
connect to gnd C6
capacitor
RST=0'
If V+<V- then
bit2=1
else bit2=0
CLKN=1'
CLKN=1'
charge Vref on the
next capacitor,
C2, and
If bit2=0 then
connect to gnd C3
capacitor
STATE 5
STATE 4
charge Vref on the

next capacitor,
C4, and
If bit4=0 then
connect to gnd C5
capacitor
If V+<V- then
bit3=1
else bit3=0
CLK=1'
CLKN=1'
CLKN=1'
charge Vref on the

next capacitor,
C3, and
If bit3=0 then
connect to gnd C4
capacitor
If V+<V- then
bit4=1
else bit4=0
CLK=1'
Figure 39: State diagram corresponding to the SAR logic behavior
- 39 -
If V+<V- then
bit5=1
else bit5=0
CLK=1'
Figure 40: Simulated logic behavior-Waveforms
- 40 -
4.8.2
Synthesis
The Synthesis infers a gate level realization of the RTL description that meets the
constraints that we specify, in our case power consumption and timing.
After synthesis, reports about the circuit are created:
10.8104 nW
Combinational area:
416 m
Noncombinational area: 965 m
Cell Internal Power =

(83%)
Net Switching Power =
(17%)
--------Total Dynamic Power =
(100%)
Total cell area:
Cell Leakage Power =
2.2340 uW
Number of ports:
Number of nets:
Number of cells:
Number of references:
34
136
130
22
1381 m
Figure 41: Synthesized gate level schematic
- 41 -
2.1650 nW
12.9753 nW
Comparing the dynamic power and the leakage power it is evident that the main
contribution to the total consumption comes from the leakage. In order to explain it,
we need to consider the different contributions to the power consumption in a circuit,
which can be divided into 3 different components that are:
Dynamic or switching power consumption. It occurs when signals change
their logic state, this cause charging and discharging of internal parasitic
capacitances.
Short circuit power consumption. It occurs during switching of both NMOS
and PMOS transistors in the circuit; due to the simultaneous conduction there is a
direct conducting path from the power supply to the ground for a short amount of
time period.
Static or Leakage power consumption. Leakage is the power consumed due
to flow of current from the power rails in the absence of any switching activity. There
are two primary sources of leakage in MOS transistors. First one is the sub-threshold
leakage, which is leakage from drain to source (or power to ground). It is based on the
fact that no transistor is a perfect switch. The other main component is gate-oxide
leakage.
As MOS transistors are reduced to deep submicron sizes, undesirable consequences
regarding power consumption arise. Decreasing the dimensions of the transistor
requires a reduction in the supply voltage to keep the dynamic power consumption
reasonable. This demands a reduction of the threshold voltage to maintain
performance, which causes an exponential increase in the sub-threshold leakage
current. Also thinner gate oxides have led to an increase in gate leakage current due to
electron tunneling through the gate oxide.
With every shrinking dimension, the leakage current will become even greater than
the dynamic current in the overall power dissipation. Working in 90nm technology
we are affected by this unwanted effect, that is evident comparing the total dynamic
power and the cell leakage power consumption reported after synthesis.
A good solution to decrease the leakage power is to use STSCL logic gates instead of
standard 90nm CMOS logic gates. In Table 2 we compare the reports on the area and
power after the synthesis.
- 42 -
Table 2: 90nm vs. STSCL after synthesis
90 nm CMOS
STSCL
Number of ports
34
35
Number of nets
136
313
Number of cells
130
270
Number of references
22
31
Combinational area
416 um
9215 um
Non-combinational area
965 um
2410 um
Total cell area
1381 um
11625 um
Cell Internal Power
10.8104 nW
2.5520 fW
Net Switching Power
2.1650 nW
1.0073 nW
Total Dynamic Power
12.9753 nW
1.0073 nW
Cell Leakage Power
2.2340 uW
593.0607 nW
We can notice that with STSCL logic, the number of cells increases, hence the area, is
more than doubled. On the other hand, the power consumption decreases
significantly. The leakage power is almost a quarter of the leakage in 90nm.
- 43 -
4.8.3
Place & Route
Figure 42: SAR logic after Place & Route
The placement and routing of the synthesized gate-level netlist infers a geometric
realization of the gate level netlist, the layout. The MOS transistors that are used are
in 90nm technology, the standard performance ones, N_12_SP and P_12_SP.
As shown in Figure 43, a power ring is placed all around the block and each cell
inside it has a power rail at its top and a ground rail at its bottom.
- 44 -
Experimental Results
As first step, the ADC circuit has been implemented in CADENCE with ideal
components, and then one kind of component has been substituted with the real one at
each time in order to simulate its effect on the linearity. For some problems related to
CADENCE, the components from the library UMC90 cannot be simulated with a
digital block written in VHDL or Verilog. For this reason we have implemented a
digital block in Verilog-A language that has the same behavior as the one
implemented in VHDL, the only difference is that the Verilog-A code takes eight
clock cycles to complete a conversion instead of nine, this is because the VHDL has
been modified during the last simulations on the whole real circuit.
The Verilog-A code can be found in Appendix VI.
As last step, the whole circuit made up of real analog components in 90nm
technology and the LVS_extracted of the layout of the digital block has been
simulated. From these simulations, the input and output of the converter have been
analyzed to extract the non-linearity parameters. Moreover, we checked the current
flowing through the circuit to have a rough estimation of the power consumption.
5.1
Comparator
The comparator has two preamplifier stages and one latch. Some AC simulations of
the single preamplifier have been performed. In Figure 44 the gain and phase versus
frequency are plotted. The gain of a single preamplifier stage is A0=11.34dB. The
frequency at -3dB is f-3dB=46.8 kHz, this is a value sufficiently large considering our
working frequency. The phase margin is PM=74 and the gain-bandwidth product is
fGBW=167 kHz.
- 45 -
Figure 43: Gain and Phase of the preamplifier
Figure 45 shows the simulated response of the comparator for a differential input
square wave. We can see that also for an input difference of 4mV, that corresponds to
half of the LSB, the comparator discriminates which input is the higher one. The full
logic levels are reached when the inverse clock, CLKN is high.
Figure 44: Comparator Transient Response for a differential input of 400mV and 4mV
- 46 -
5.2
Mismatch effects on ADC parameters

MOM Capacitors and Real Switches
The first component to be substituted has been the capacitors of the DAC, then, we
perform some Monte Carlo simulations. We have performed 100 runs; each run, the
tool inserted a mismatch between the capacitors, where C0=100fF. The maximum
mismatch inserted by CADENCE is os,cap=0.454fF. The extracted non linearity
parameters show that this mismatch doesnt affect too much the non linearity, in
Figure 46 are shown the two parameters plotted for one of the runs. The worst
integral non linearity comes out to be INL=0.2342LSB.
Figure 45: DNL and INL - real capacitors
The same kind of simulation has been performed with the ideal capacitors, but
replacing the switches with the real ones. The extracted INL and DNL are shown in
Figure 47.
- 47 -
Figure 46: DNL and INL - real switches
5.3
Signal to Noise Ratio
Simulating the circuit for a sinusoidal input, the results can be imported in MATLAB
in order to extract the SNR and SFDR, using the Fast Fourier Transform (FFT). The
power spectrum is plotted in the Nyquist bandwidth fs/2. We define a sampling clock
fs=1.024kHz, than we simulate for a number of fft points Nfft=256. The frequency of
the input sinusoidal signal is fin=255Hz.
For the ideal circuit we extract an SNR=48.7dB, slightly lower than the ideal one, that
is 49.9dB. The SFDR is 57.7 and the effective number of bits is ENOB=7.8.
The power spectrum in Figure 48 is plotted for the simulation of the ADC with real
components.
Figure 47: Power spectrum for the real circuit.
- 48 -
5.4
DAC
In Figure 48 is shown the output of the DAC for the conversion of the analog inputs
Vin=1.2 and Vin=-1.2, the maximum and minimum allowable input for the converter.
The output of the DAC is the input of the comparator. Whatever is the number to
convert, the common mode of the comparator differential input is always 0.6V, half
of the full scale. This avoids problems due to the input range of the comparator.
Figure 48: Transient response of the output of the DAC
- 49 -
5.5
Input/Output Characteristic
At the input of the converter, we gave a ramp with a very low slope, in order to
ideally have 10 samples per each digital value. From the results of this simulation, we
have been able to extract in MATLAB the integral and differential non-linearity.
Figure 49: DNL working with 50nA of bias current at a frequency of 8kHz
To better understand this behaviour, the analog input versus the digital output is
plotted in Figure 51. The peak in the middle of the DNL corresponds to the passage
of the analog input through zero; it means that the differential signals IN+ and IN- are
both at 0.6V and their difference correspond to 0V. We can see that for the 2 digital
levels around 0, instead of staying 1LSB on one level and 1LSB on the other, the
characteristic stays of 2LSB on the first level, and of 2LSB on the other one.
Also changing the operating frequency, this behavior doesnt change; it means that it
is a problem due to the logic of the conversion that has to be fixed. However, it
remains a local problem; it doesnt affect the linearity of the next conversions.
- 50 -
Figure 50: Input-Output Characteristic
It can be seen immediately that almost all the steps are equally spaced in both x and y
directions. This led to a DNL that is for most of the time equal to zero. This would
seem strange considering that the circuit is composed by real components, but we
didnt inject any mismatch between the components, moreover the simulations have
been performed for 10 samples per each digital step. Focusing on the initial part of
the ramp and simulating in order to have 100 points per step, we can see that actually,
there is a variation in the DNL.
Figure 51:INL for 100 points per LSB
Then we try to find, ideally, which is the upper limit until which we can increase the
frequency of operation, and the bottom limit for the bias current. Working at 20 kHz
with a bias current of 10nA, the differential non linearity of the circuit starts
exceeding 1LSB.
- 51 -
Figure 52: INL/DNL working with 10nA of bias current at a frequency of 20kHz
5.6
Current and power considerations
We perform several simulations in order to check the current flowing through the
whole circuit and how it is divided between the different blocks. The current is
directly proportional to the power consumption, so we can estimate it.
Some parameters have been changed between different simulations, in this way we
can check the effect of each parameter on the power consumption of the converter
and of each of his building blocks.
It is important to underline the fact that these simulations were carried on with bias
current that are also different from the nominal one, and for frequencies that
sometimes exceeds their maximum value. This is done because the goal of these
simulations is to show how the current changes in the circuit due to a change of these
parameters.
The parameters on which we play are three, the value of the basic capacitor, the
internal frequency of operation and the bias current. Each time we fix one or two
parameters and we compare how the current in the circuit change due to the change of
the others.
- 52 -
We consider the rms(root mean square) value of the currents flowing through:
The comparator (the two preamplifier, latch, replica bias blocks): Icomparator;
The digital logic block: ISARlogic;
The Digital to Analog converter: IDAC;
The others analog blocks, level shifter and delay cells: Ianalog;
The whole ADC circuit: ITOT=rms(Icomparator+ISARlogic+Ianalog+IDAC).
First we fix the basic capacitor value and the bias current to see the effect of a change
in the working frequency.
97.4783 fF
C0
Ibias
50 nA
Table 3: Current versus a change in frequency
fint
Icomparator
ISARlogic
Ianalog
IDAC
ITOT
P=VDDITOT
[Hz]
[A]
[A]
[A]
[A]
[A]
[W]
8k
495n
8.28u
2.66u
5.04u
10.74u
12.9u
12.5 k
496n
9.21u
2.39u
4.04u
11.15u
13.4u
20 k
505n
12.56u
2.39u
4.25u
14.18u
17.0u
It is evident the increase in the value of the current flowing in the digital block due to
the increase in frequency.
In the next Table we can see for different frequencies, how the current change if we
change the bias current.
C0 97.4783 fF
Table 4: Current versus a change in bias current for different frequencies
Ibias
fint
Icomparator
ISARlogic
Ianalog
IDAC
ITOT
P=VDDITOT
[A]
[Hz]
[A]
[A]
[A]
[A]
[A]
[W]
10n
8k
120n
8.25u
2.48u
3.18u
9.77u
11.7u
50n
8k
495n
8.28u
2.66u
5.04u
10.74u
12.9u
10n
12.5 k
121n
9.24u
2.86u
3.90u
11.27u
13.5u
50n
12.5 k
496n
9.21u
2.39u
4.04u
11.15u
13.4u
10n
20 k
143n
12.52u
3.11u
4.31u
14.41u
17.3u
50n
20 k
505n
12.56u
2.39u
4.25u
14.18u
17.0u
- 53 -
As predicted by theory, the comparator consumes less if the bias current decreases,
however this can be a benefit just in case of low frequencies. When the frequencies
are higher, the decrease in consumption due to the comparator became negligible
compared to the increase of current requested by the level shifter and the delay cells,
that contain inverters.
In Table 4 we see the effect of changing the size of the basic capacitor for different
frequencies and a fixed bias current.
50nA
Ibias
Table 5: Current versus a change in bias current for different frequencies
C0
fint
Icomparator
ISARlogic
Ianalog
IDAC
ITOT
P=VDDITOT
[F]
[Hz]
[A]
[A]
[A]
[A]
[A]
[W]
97.4783 f
8k
495n
8.28u
2.66u
5.04u
10.74u
12.9u
7.71472f
8k
495n
8.24u
2.71u
4.09u
10.17u
12.2u
97.4783 f
20 k
505n
12.56u
2.39u
4.25u
14.18u
17.0u
7.71472f
20 k
504n
12.51u
2.36u
3.80u
13.99u
16.8u
The DAC consumes less if the capacitance decrease, this is evident considering that
1
the energy is proportional to the capacitance: Ein = Ctot Vin 2
2
- 54 -
Conclusions
Conclusions
This project has been started with an extensive research in order to study and analyze
the state of the arts of the ultra low power ADCs. Based on this study the SAR
architecture has been chosen as the one that allows targeting few micro-Watts of
power consumption. Then, a behavioral model in Matlab has been implemented to
study the working principle and the effects of non-idealities on the converter
performances. A deep research on the available literature has been carried out to
define the topologies of the various building blocks of the ADC core. The ADC core
is composed by comparator, DAC, SAR control logic and delay elements; these
components have been designed targeting to fulfill several constraints on
requirements such as the offsets due to mismatch.
From the results presented in the previous chapter it can be deduced that the
performance of the ADC less than ideal. Actually it consumes a low amount of
power, few tens of micro-Watts, but the price to pay is in the speed of the conversion
that decreases to few kSample/s. However the conversion is performed without
missing codes.
Power supply
1.2 V
Process Technology
90 nm
Input dynamic range
1.2V (differential)
Resolution
8 bits
Internal frequency fint

Sampling Rate
12.6 kHz
1.4 kSample/s
Basic capacitor C0
97.4783 fF
Bias current Ibias
50 nA
Power
13.4 W
- 55 -
6.1
Conclusions
Future work
In the limited time available for this project we couldnt perform some important
analysis, such as noise analysis. As future work, several improvements can be
brought to the circuit in order to increase the performances.
First a study of the most suitable design for Track and Hold circuit to be inserted in
the circuit can be performed; adding this block the sampling rate can be increased.
Also, the analog components, such as the level shifter, can be redesigned to decrease
the amount of current that they require.
But the most important element that we should care about is the logic block.
Currently it is built by components from the standard 90nm CMOS technology;
targeting a lower consumption of power the digital part can be implemented with
STSCL gates, this would help a lot to decrease the current flowing through it.
The last important part that we still have to work on, is the layout of the whole circuit
and the post layout simulations in order to see the real behavior and performances of
the ADC.
- 56 -
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- 59 -
Appendix I
Matlab code for INL and DNL calculation:
clc
clear all
% Basic
Ut = 0.026;
Vsw = 10*Ut;
nn = 1.3;
ISS = 1e-9;
% tail bias
% ADC
NF = 8;
% num. bit
N = 2^NF;
% fft points
FS = 1;
% full scale
dV = FS/2^NF;
LSB = FS/N;
Vr = 1;
fs = 2^13;
% sampling freq.
tck = 1/fs;
% sampling period
fsh = fs/9;
% sampling freq.
tsh = 1/fsh;
% sampling period
% Input signal
Vin = 0.7;
Vref = FS;
Vss = 0;
Ain
= 0.5; % sin wave amplitude
fin
= fs/2^12; % sin wave freq
start_ramp=0;
offset_sin=0.5;
Vcin1 = 1;
% =1->ramp ; =0->sin (if Vcin2=0)
Vcsah = 0;
% Vcsah = 0 : SAH is employed
g_comp = 10000;
% gain of comparator preamplifier
noise = 0;
% white noise at comparator input
off_comp = 0;
% offset of comparator
comp_val = 0.5;
% limit of comparison
% Simulation
M = 2^12;
% sample points
ts = 0.001*tck;
% sim. time for unit delay
%tf = (6 + M)/(fs*2);
% sim. final time
slope=(1/N)/(4*LSB);
stop_sim=1;
% DAC capacitances and voltages--mismatched
index=1;
tr=100;
var_cap=0;
vfin=0.01;
step=vfin/5;
while var_cap<=vfin
for turns=1:tr
Cdac = 0;
c0 = 24e-15;
for i=1:8
cap_id(i) = c0 * 2^(i-1);
cap(i) = c0*2^(i-1) + var_cap*cap_id(i)*randn(1);
end
Cdac = sum(cap)+c0;
- 60 -
Cdac_id= sum(cap_id)+c0;
for j=1:8
Vdac(j)=cap(j)/Cdac;
Vdac_id(j)=cap_id(j)/Cdac_id;
end
% run simulation
tout = sim('SAR_ADC_inldnl');
load('o_adc_di.mat');
out_adc_a=o_adc(2,:)';
x_adc=o_adc(1,:)';
load('o_sah_di.mat');
out_sah=o_sah(2,:)';
load('in_sh_di.mat');
in_shape=in_sh(2,:)';
load('o_adc_dig.mat');
y_adc_d=o_adc_dig';
fin=max(size(y_adc_d));
out_adc=zeros(fin,1);
for ii=1:fin
for jj=1:8
out_adc(ii) = out_adc(ii)+y_adc_d(ii,jj+1)*Vdac_id(jj);
end
end
i=1;
while x_adc(i)<(tsh)
i=i+1;
end
l=max(size(out_adc));
out_adc=out_adc(i:l);
l1=l-i+1;
x_adc=x_adc(1:l1);
out_sah=out_sah(1:l1);
in_shape=in_shape(1:l1);
y=out_adc;
x=in_shape;
out_ch=[x y];
% dnl and inl ADC output
% input y contains the ADC output vs time
min_v=min(y);
max_v=max(y);
x1=min_v:LSB:max_v;
l=numel(x1);
% histogram
h = hist(y,x1);
n_elem =histc(y,x1);
% cumulative histogram
ch = cumsum(h);
dnl=0;
v_real=zeros(l-1,1);
- 61 -
n=0;
n_old=0;
x1=x1(1:l-1);
for i=1:l-1
if i==1
n=ch(i);
n_old=1;
v_real(i)=out_ch(n,1);
else
n_old=n;
n=ch(i);
v_real(i)=out_ch(n,1)-out_ch(n_old,1);
end
dnl(i) = (v_real(i)-LSB)/LSB;
end
misscodes = length(find(dnl<-0.9));
%
% calculate inl
inl=zeros(size(dnl));
for j=1:size(inl')
inl(j)=sum(dnl(1:j));
%INL,j=DNL,0+DNL,1+...+DNL,j
% INL=inl(j);
end
inl_turn(turns)=max(abs(inl));
dnl_turn(turns)=max(abs(dnl));
end
INL(index)=mean(inl_turn);
DNL(index)=mean(dnl_turn);
xax(index)=var_cap;
index=index+1;
var_cap = var_cap + step;
end
figure(1)
clf
subplot(211)
plot([1:2^NF],DNL,'-rs','MarkerEdgeColor','k','MarkerFaceColor','g','MarkerSize',10);
grid on;
title('MAX DIFFERENTIAL NONLINEARITY vs. VARIANCE_ERROR_CAP');
xlabel('VARIANCE_ERROR_CAP');
ylabel('DNL (LSB)');
hold on
subplot(212)
plot([1:2^NF],INL);
grid on;
title('MAX INTEGRAL NONLINEARITY vs. VARIANCE_ERROR_CAP');
ylabel('INL(LSB)');
hold on
- 62 -
Appendix II
Matlab code for SNR calculation:
clc
clear all
% Basic
Ut = 0.026;
Vsw = 10*Ut;
nn = 1.3;
ISS = 1e-9;
% tail bias
% ADC
NF = 8;
% num. bit
N = 2^NF;
% fft points
Nfft = 2^8;
FS = 1;
% full scale
dV = FS/2^NF;
LSB = FS/N;
Vr = 1;
% fs = fsh*9
% clk freq.
% tck = 1/fs;
% clk period
fsh = 2^10;
% sampling freq.
tsh = 1/fsh;
% sampling period
fs = fsh*9;
% clk freq.
tck = 1/fs;
% clk period
bw=fsh/2;
% Input signal
Vin = 0.7;
Vref = FS;
Vss = 0;
Ain
= 0.5; % sin wave amplitude
M =63;
% prime number
fin
= M*fsh/Nfft; % sin wave freq
start_ramp=0;
offset_sin=0.5;
Vcin1 = 0;
% =1->ramp ; =0->sin (if Vcin2=0)
Vcsah = 0;
% Vcsah = 0 : SAH is employed
g_comp = 100;
% gain of comparator preamplifier
noise = 0;
% white noise at comparator input
off_comp = 0;
% offset of comparator
comp_val = 0.5;
% limit of comparison
% Simulation
ts = 0.01*tck;
% sim. time for unit delay
tf = (Nfft+10)*tsh;
% sim. final time
slope=(1/N)/(3*LSB);
stop_sim=0.1;
% DAC capacitances and voltages--mismatched
index=1;
tr=50;
var_cap=0;
vfin=0.01;
step=vfin/5;
while var_cap<=vfin
var_cap
- 63 -
for turns=1:tr
turns
Cdac = 0;
c0 = 24e-15;
for i=1:8
cap_id(i) = c0 * 2^(i-1);
cap(i) = c0 * 2^(i-1)+ var_cap*cap_id(i)*randn(1) ;
end
Cdac = sum(cap)+c0;
Cdac_id= sum(cap_id)+c0;
for j=1:8
Vdac(j)=cap(j)/Cdac;
Vdac_id(j)=cap_id(j)/Cdac_id;
end
% run simulation
tout = sim('SAR_ADC_SNR',tf);
load('o_adc.mat');
y_adc_a=o_adc(2,:)';
x_adc=o_adc(1,:)';
load('o_sah.mat');
y_sah=o_sah(2,:)';
load('in_sh.mat');
y_in_sh=in_sh(2,:)';
load('o_adc_dig.mat');
y_adc_d=o_adc_dig';
fin=max(size(y_adc_d));
y_adc=zeros(fin,1);
for ii=1:fin
for jj=1:8
y_adc(ii) = y_adc(ii)+y_adc_d(ii,jj+1)*Vdac_id(jj);
end
end
prova=[y_adc_a y_adc];
i=1;
while x_adc(i)<(tsh)
i=i+1;
end
l=max(size(y_adc));
y_adc=y_adc(i:l);
l1=l-i+1;
x_adc=x_adc(1:l1);
y_sah=y_sah(1:l1);
y_in_sh=y_in_sh(1:l1);
new_yad=zeros(1,(Nfft+9));
j=1;
k=1;
val=y_adc(1);
while k <= (Nfft+9)
- 64 -
val=y_adc(j);
new_yad(k)=val;
while (y_adc(j)==val && j<max(size(y_adc)) )
j=j+1;
end
k=k+1;
end
new_y=zeros(1,(Nfft+9));
j=1;
k=1;
val=y_sah(1);
while k <= (Nfft+9)
val=y_sah(j);
new_y(k)=val;
while (y_sah(j)==val && j<max(size(y_sah)) )
j=j+1;
end
k=k+1;
end
diff=zeros(Nfft+9,1);
error=0;
for j=1:Nfft+9
diff(j)=abs(new_y(j)-new_yad(j));
if diff(j)>LSB
error=1;
end
end
y=new_yad;
n=2^floor(log2(length(y)));
ywin=hann(n).*y(1:n);
p=(abs(fft(ywin(1:n),n)))';
k1=3;
offset=4;
[v h]=max(p(offset:n/2));
v;
h=h+offset;
p_sq=p.^2;
Spow=sum(p_sq(h-1:h+1));
Npow1=sum(p_sq(4:h-k1));
Npow2=sum(p_sq(h+k1:n/2));
Npow=Npow1+Npow2;
Npow_db=10*log10(Npow);
SNR_turn(turns)=10*(log10(Spow)-log10(Npow));
f=fsh*(1:n)/n;
%ENOB = (SNR_turn(turns) - 1.76) / 6.02;
%ideal_SNR=6.02*NF+1.76;
p_db=log10(p_sq);
[v1 h1]=max(p_db(offset:h-k1));
- 65 -
[v2 h2]=max(p_db(h+k1:n/2));
Hpow=0;
if v1>v2
Hpow=v1;
else Hpow=v2;
end
SFDR_turn(turns)=10*(log10(Spow)-Hpow);
end
SNR(index)=mean(SNR_turn);
SFDR(index)=mean(SFDR_turn);
xax(index)=var_cap;
index=index+1;
var_cap = var_cap + step;
end
figure(1)
clf
subplot(211)
plot(xax,SNR);
grid on;
title('SNR vs. VARIANCE_ERROR_CAP');
ylabel('SNR');
hold on
subplot(212)
plot(xax,SFDR);
grid on;
title('SFDR vs. VARIANCE_ERROR_CAP');
ylabel('SFDR');
hold on
- 66 -
Appendix III
Here we can find the simulated trends of INL, DNL, SNR and SFDR when the error standard
deviation, due to the non idealities of the circuit, increases.
Capacitor mismatch:
- 67 -
Comparator offset:
- 68 -
Non-ideal reference voltage:
- 69 -
Appendix IV
Replica bias that creates the gate voltage for the PMOS load and acts as controlling circuit
to mantain the desired voltage swing at the output of the SCL gates.
- 70 -
Appendix V
VHDL code of the logic block:
-- ADVance MS model for SAR_real SARVHDL adms_vhdl
-library ieee;
use ieee.std_logic_1164.all;
use ieee.numeric_std.all;
entity logicSAR5 is
port(clk,clkd,clkn
rst,sc
in_pos, in_neg
sw_pp, sw_pn
sw_sample
sw_ref
sw_gnd
single stages to gnd
sw_v
single stages to Vref
conv_value
);
-end entity;
:in std_logic;
:in std_logic; --reset and start of conversion
:in std_logic;
:out std_logic;
:out std_logic;
:out std_logic;
:out std_logic_vector (7 downto 0);
-- connect
:out std_logic_vector (7 downto 0);
-- connect
:out std_logic_vector (7 downto 0)
architecture behav of logicSAR5 is

type state_type is
(ch_V_1,comp0,comp1,comp2,comp3,comp4,comp5,comp6,comp7,rst_state);
signal N_S,C_S_D,C_S : state_type;
signal
signal
signal
signal
signal
bits
in_reg_pos
in_reg_neg
sel
tmp
:
:
:
:
:
std_logic_vector (7 downto 0);

std_logic;
std_logic;
std_logic;
std_logic;
begin
------------------------------------------------------------------------outc: process(tmp,rst)
constant zero : std_logic_vector (8 downto 0) := (others => '0');
begin
if (rst='0') then
sw_sample <= '0';
sw_ref
<= '0';
elsif (tmp='1') then
if (C_S=comp1 or C_S=comp0) then
sw_sample <= '0';
sw_ref
<= '0';
else sw_sample <= '0';
sw_ref
<= '1';
end if;
elsif (tmp='0') then
if (C_S=comp0) then
sw_sample <= '1';
- 71 -
sw_ref
<= '0';
else sw_sample <= '0';
sw_ref
<= '1';
end if;
end if;
end process outc;
------------------------------------------------------------------------tmp <= clk and (not clkd);
in_reg_pos <= ( (in_pos and sel) or ( in_neg and (not(sel)) ) );
in_reg_neg <= ( (in_neg and sel) or ( in_pos and (not(sel)) ) );
------------------------------------------------------------------------comp: process( rst,clk )
constant uno
: std_logic_vector (7 downto 0) := (others => '1');
constant undef : std_logic_vector (7 downto 0) := (others => 'U');
begin
if (rst='0') then
-- reset all, discharge all capacitors
sw_v <= zero;
sw_gnd <= uno;
conv_value <= zero;
C_S <= rst_state;
elsif ( clk'event and clk='1' ) then
case C_S is
-- sample mode
when ch_V_1 => sw_gnd <= zero;
-- disconnect V
sw_v <= uno;
if (sel = '1') then
conv_value <= bits;
else conv_value <= not(bits);
end if;
if (sc='0') then
--active low
C_S <= comp0;
-- conversion start just when the start conversion is low,or it
--remains in sample state
else C_S <= ch_V_1;
end if;
-- test MSB: Vout=-Vin+Vref/2
when comp0
=> sw_v
<= zero;
sw_gnd
<= uno;
sw_gnd(7)<= '0';
sw_v(7) <= '1';
--charge Vref on 64C
C_S <= comp1;
when comp1
=> if (bits(6)='0') then
sw_gnd(7) <= '1';
sw_v(7) <= '0';
else sw_gnd(7) <= '0';
sw_v(7) <= '1';
end if;
sw_v(6) <= '1'; --charge Vref on 32C
sw_gnd(6) <= '0';
C_S <= comp2;
when comp2
sw_gnd(6) <= '1';
sw_v(6) <= '0';
sw_v(6) <= '1';
end if;
sw_v(5) <= '1';
--charge Vref on 16C
sw_gnd(5) <= '0';
C_S <= comp3;
when comp3
- 72 -
sw_gnd(5) <= '1';

sw_v(5) <= '0';
sw_v(5) <= '1';
end if;
sw_v(4) <= '1';
--charge Vref on 8C
sw_gnd(4) <= '0';
C_S <= comp4;
when comp4
sw_gnd(4) <= '1';
sw_v(4) <= '0';
sw_v(4) <= '1';
end if;
sw_v(3) <= '1';
--charge Vref on 4C
sw_gnd(3) <= '0';
C_S <= comp5;
when comp5
sw_gnd(3) <= '1';
sw_v(3) <= '0';
sw_v(3) <= '1';
end if;
sw_v(2) <= '1';
--charge Vref on 2C
sw_gnd(2) <= '0';
C_S <= comp6;
when comp6
sw_gnd(2) <= '1';
sw_v(2) <= '0';
sw_v(2) <= '1';
end if;
sw_v(1) <= '1';
--charge Vref on C
sw_gnd(1) <= '0';
C_S <= comp7;
when comp7
=> sw_gnd <= zero;
-- disconnect V
sw_v <= uno;
C_S <= ch_V_1;
when rst_state => C_S <= ch_V_1;
end case;
end if;
end process comp;
-------------------------------------------------------------------comp_d: process(rst,clkn,clk)
constant uno
: std_logic_vector (7 downto 0) := (others => '1');
begin
if (rst='0') then
sw_pp <= '0';
sw_pn <= '0';
sel <= '1';
bits
<= zero;
elsif (clkn'event and clkn='1') then
-- check the results of the comparisons and
-- set the value of the bits of the digital output
case C_S is
when rst_state => sw_pp <= '0';
sw_pn <= '0';
sel <= '1';
bits
<= zero;
- 73 -
when ch_V_1
when comp0
when comp1
when comp2
when comp3
when comp4
when comp5
when comp6
when comp7
=> bits <= bits;

=> bits
<= zero;
bits(7) <= '1';
if (in_pos > in_neg) then
sw_pp <= '1';
sw_pn <= '0';
sel <= '1';
else sw_pn <= '1';
sw_pp <= '0';
sel <= '0';
end if;
=> if (in_reg_pos < in_reg_neg) then
bits(6)
<= '1';
else bits(6)
<= '0';
end if;
bits(5)
<= '1';
else bits(5)
<= '0';
end if;
bits(4)
<= '1';
else bits(4)
<= '0';
end if;
bits(3)
<= '1';
else bits(3)
<= '0';
end if;
bits(2)
<= '1';
else bits(2)
<= '0';
end if;
bits(1)
<= '1';
else bits(1)
<= '0';
end if;
=>if (in_reg_pos < in_reg_neg) then
bits(0)
<= '1';
else bits(0)
<= '0';
end
if;
end case;
end if;
end process comp_d;
end architecture;
- 74 -
Appendix VI
Verilog-A code of the logic block:
// VerilogA for SAR_real, logicBlock, veriloga
`include "constants.vams"
`include "disciplines.vams"
module logicBlock(clk,clkd,rst,in_pos, in_neg,sw_pp, sw_pn,
sw_sample,sw_ref, sw_gnd,sw_v,conv_value,
N_SO, C_SO, selO,CKO,CKdO ,CKsahO ,regINpO,regINnO );
input clk,clkd,rst;
electrical clk,clkd,rst;
input in_pos, in_neg;
electrical in_pos, in_neg;
output sw_pp, sw_pn;
electrical sw_pp, sw_pn;
output sw_sample;
electrical sw_sample;
output sw_ref;
electrical sw_ref;
output [0:7] sw_gnd, sw_v;
electrical [0:7] sw_gnd, sw_v;
output [0:7] conv_value;
electrical [0:7] conv_value;
output N_SO;
electrical N_SO;
output C_SO;
electrical C_SO;
output selO;
electrical selO;
output CKO;
electrical CKO;
output CKdO;
electrical CKdO;
output CKsahO;
electrical CKsahO;
output regINpO;
electrical regINpO;
output regINnO;
electrical regINnO ;
real
real
real
real
real
real
real
real
real
real
in_reg_pos;
in_reg_neg;
reg_sw_vdac;
reg_sw_vin;
reg_sw_sample;
reg_sw_in;
reg_sw_ref;
tmp;
sampOut;
sampData [0:7];
integer swpp, swpn;
- 75 -
integer
integer
integer
integer
integer
swsample;
swref;
swgnd [0:7];
swv [0:7];
convvalue [0:7];
integer
integer
integer
integer
integer
integer
integer
integer
integer
integer
fileDesc;
N_S;
C_S;
bits [0:7];
sel;
CK;
CKd;
RES;
regINp;
regINn;
parameter
parameter
parameter
parameter
parameter
parameter
parameter
parameter
parameter
parameter
parameter
real vth = 0.6;

real vthCOMP = 1.1;
integer ch_V_1 = 1;
integer comp0 = 2;
integer comp1 = 3;
integer comp2 = 4;
integer comp3 = 5;
integer comp4 = 6;
integer comp5 = 7;
integer comp6 = 8;
integer rst_state = 9;
analog
begin
/*--------------------------------------------------------------*/
V(sw_pp)
<+ swpp;
V(sw_pn)
<+ swpn;
V(sw_sample)
<+ swsample;
V(sw_ref)
<+ swref;
V(sw_gnd[0])
<+ swgnd[0];
V(sw_gnd[1])
<+ swgnd[1];
V(sw_gnd[2])
<+ swgnd[2];
V(sw_gnd[3])
<+ swgnd[3];
V(sw_gnd[4])
<+ swgnd[4];
V(sw_gnd[5])
<+ swgnd[5];
V(sw_gnd[6])
<+ swgnd[6];
V(sw_gnd[7])
<+ swgnd[7];
V(sw_v[0])
<+ swv[0];
V(sw_v[1])
<+ swv[1];
V(sw_v[2])
<+ swv[2];
V(sw_v[3])
<+ swv[3];
V(sw_v[4])
<+ swv[4];
V(sw_v[5])
<+ swv[5];
V(sw_v[6])
<+ swv[6];
V(sw_v[7])
<+ swv[7];
V(conv_value[0])
V(conv_value[1])
V(conv_value[2])
V(conv_value[3])
V(conv_value[4])
V(conv_value[5])
V(conv_value[6])
<+
<+
<+
<+
<+
<+
<+
convvalue[0];
convvalue[1];
convvalue[2];
convvalue[3];
convvalue[4];
convvalue[5];
convvalue[6];
- 76 -
V(conv_value[7])
<+ convvalue[7];
/*-------------------------------------V(conv_value[0])
<+ bits[0];
V(conv_value[1])
<+ bits[1];
V(conv_value[2])
<+ bits[2];
V(conv_value[3])
<+ bits[3];
V(conv_value[4])
<+ bits[4];
V(conv_value[5])
<+ bits[5];
V(conv_value[6])
<+ bits[6];
V(conv_value[7])
<+ bits[7];
--------------------------------------*/
//tmp output for debug
V(N_SO)
V(C_SO)
V(selO)
V(CKO)
V(CKdO)
V(regINpO)
V(regINnO)
<+ N_S;
<+ C_S;
<+ sel;
<+ CK;
<+ CKd;
<+ regINp;
<+ regINn;
/*--------------------------------------------------------------*/
CK = (V(clk) > vth) ? 1:0;
CKd = (V(clkd) > vth) ? 1:0;
RES = (V(rst) > vth) ? 1:0;
regINp = (V(in_pos) > vthCOMP) ? 1:0;
regINn = (V(in_neg) > vthCOMP) ? 1:0;
/*--------------------------------------------------------------*/
@(cross(CK-0.5, +1) or cross(RES-0.5, -1))
begin
if (RES == 0)
C_S = rst_state;
else if (CK == 1)
C_S = N_S;
end
/*--------------------------------------------------------------*/
tmp = CK && (!CKd);
in_reg_pos = ( (regINp && sel) || ( regINn && (!sel) ) );
in_reg_neg = ( (regINn && sel) || ( regINp && (!sel) ) );
/*--------------------------------------------------------------*/
@(cross(RES-0.5, -1) or cross(CK-0.5, +1) or cross(tmp-0.5, 0))
begin
if (RES==0)
begin
swsample = 0;
swref
= 0;
end
else if (C_S==ch_V_1 && tmp==1)
begin
swsample = 0;
swref
= 0;
end
else if (C_S==comp0 && tmp==1)
begin
swsample = 0;
swref
= 0;
end
else
begin
swsample = reg_sw_sample;
swref
= reg_sw_ref;
end
- 77 -
end
/*--------------------------------------------------------------*/
@(cross(CK-0.5, +1) or cross(RES-0.5, -1))
begin
if (RES==0)
begin
swgnd[0] = 1;
swgnd[1] = 1;
swgnd[2] = 1;
swgnd[3] = 1;
swgnd[4] = 1;
swgnd[5] = 1;
swgnd[6] = 1;
swgnd[7] = 1;
swv[0] = 0;
swv[1] = 0;
swv[2] = 0;
swv[3] = 0;
swv[4] = 0;
swv[5] = 0;
swv[6] = 0;
swv[7] = 0;
convvalue[0] = 0;
convvalue[1] = 0;
convvalue[2] = 0;
convvalue[3] = 0;
convvalue[4] = 0;
convvalue[5] = 0;
convvalue[6] = 0;
convvalue[7] = 0;
N_S
= rst_state;
end
else if (CK==1)
begin
case (C_S)
ch_V_1 : begin
reg_sw_sample = 1;
reg_sw_vdac = 0;
reg_sw_vin = 1;
reg_sw_in
= 1;
reg_sw_ref = 0;
swgnd[0] = 0;
swgnd[1] = 0;
swgnd[2] = 0;
swgnd[3] = 0;
swgnd[4] = 0;
swgnd[5] = 0;
swgnd[6] = 0;
swgnd[7] = 0;
swv[0] = 1;
swv[1] = 1;
swv[2] = 1;
swv[3] = 1;
swv[4] = 1;
swv[5] = 1;
swv[6] = 1;
swv[7] = 1;
N_S
= comp0;
if (sel == 1)
begin
convvalue[0] = bits[0];
- 78 -
end
else begin
convvalue[0] = !bits[0];
end
end
comp0 : begin
reg_sw_sample= 0;
reg_sw_in
= 0;
reg_sw_ref
= 1;
swv[0] = 0;
swv[1] = 0;
swv[2] = 0;
swv[3] = 0;
swv[4] = 0;
swv[5] = 0;
swv[6] = 0;
swv[7] = 1;
//charge Vref-Vcm on 64C
swgnd[0] = 1;
swgnd[1] = 1;
swgnd[2] = 1;
swgnd[3] = 1;
swgnd[4] = 1;
swgnd[5] = 1;
swgnd[6] = 1;
swgnd[7] = 0;
N_S
= comp1;
end
comp1 : begin
if (bits[6]==0)
begin
swgnd[7] = 1;
swv[7] = 0;
end
swv[6] = 1;
//charge Vref-Vcm on 32C
swgnd[6] = 0;
N_S
= comp2;
end
comp2 : begin
if (bits[5]==0)
begin
swgnd[6] = 1;
swv[6] = 0;
end
swv[5] = 1;
//charge Vref on 16C
swgnd[5] = 0;
N_S
= comp3;
end
- 79 -
comp3 : begin
if (bits[4]==0)
begin
swgnd[5] = 1;
swv[5] = 0;
end
swv[4] = 1;
//charge
swgnd[4] = 0;
N_S = comp4;
end
comp4 : begin
if (bits[3]==0)
begin
swgnd[4] = 1;
swv[4] = 0;
end
swv[3] = 1;
//charge
swgnd[3] = 0;
N_S = comp5;
end
comp5 : begin
if (bits[2]==0)
begin
swgnd[3] = 1;
swv[3] = 0;
end
swv[2] = 1;
//charge
swgnd[2] = 0;
N_S = comp6;
end
comp6 : begin
if (bits[1]==0)
begin
swgnd[2] = 1;
swv[2] = 0;
end
swv[1] = 1;
//charge
swgnd[1] = 0;
N_S = ch_V_1;
end
Vref on 8C
Vref on 4C
Vref on 2C
Vref on C
rst_state : begin
N_S = ch_V_1;
end
endcase
end
end
/*--------------------------------------------------------------*/
@(cross(RES-0.5, -1) or cross(CK-0.5, -1))
begin
if (RES==0)
begin
swpp = 0;
swpn = 0;
sel = 1;
bits[0] = 0;
bits[1] = 0;
bits[2] = 0;
bits[3] = 0;
bits[4] = 0;
- 80 -
bits[5] = 0;
bits[6] = 0;
bits[7] = 0;
end
else if (CK==0)
begin
case (C_S)
ch_V_1 : begin
if (V(in_pos) > V(in_neg))
begin
swpp = 1;
swpn = 0;
sel = 1;
end
else begin
swpn = 1;
swpp = 0;
sel = 0;
end
bits[0] = 0;
bits[1] = 0;
bits[2] = 0;
bits[3] = 0;
bits[4] = 0;
bits[5] = 0;
bits[6] = 0;
bits[7] = 1;
end
comp0 : begin
if (in_reg_pos < in_reg_neg)
bits[6] = 1;
else begin
bits[6] = 0;
end
end
comp1 : begin
bits[5] = 1;
else begin
bits[5] = 0;
end
end
comp2 : begin
bits[4] = 1;
else begin
bits[4] = 0;
end
end
comp3 : begin
bits[3] = 1;
else begin
bits[3] = 0;
end
end
comp4 : begin
bits[2] = 1;
else begin
- 81 -
bits[2] = 0;
end
end
comp5 : begin
bits[1] = 1;
else begin
bits[1] = 0;
end
end
comp6 : begin
bits[0] = 1;
else bits[0] = 0;
end
endcase
end
end
end
endmodule
- 82 -

Beanato MasterThesis 2009

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Design of a Very Low Power SAR Analog

Design of a Very Low Power SAR ADC

Design of a Very Low Power SAR ADC

Design of a Very Low Power SAR ADC

Design of a Very Low Power SAR ADC

Appendix I.-60Appendix II.......-63Appendix III......-67Appendix IV..-70Appendix V...-71Appendix VI..-75-

Design of a Very Low Power SAR ADC

Design of a Very Low Power SAR ADC

Design of a Very Low Power SAR ADC

Analog to Digital Converter (ADC), is an electronic circuit that converts continuous

Figure 1: Analog-Digital Conversion

Design of a Very Low Power SAR ADC

Figure 2: Flash ADC Block Diagram

Design of a Very Low Power SAR ADC

Successive Approximation Register ADC (Figure 3) represents the majority of the

Figure 3: SAR ADC Block Diagram

A Sigma-Delta ADC (Figure 4) contains very simple analog electronics (a

Figure 4: Delta Sigma ADC Block Diagram

Design of a Very Low Power SAR ADC

Folding and Interpolating ADC

Figure 5: Folding and Interpolating ADC Block Diagram

Comparison between published data

Design of a Very Low Power SAR ADC

Successive Approximation Register ADC

Comparing Successive Approximation Register, Flash, Folding and Interpolating and

Figure 6: Simplified N-bit SAR ADC architecture.

Design of a Very Low Power SAR ADC

Figure 7: SAR operation (4-bit ADC example).

Design of a Very Low Power SAR ADC

Figure 8: input/output characteristics

Differential Non-Linearity error is defined as the difference between an actual step

Design of a Very Low Power SAR ADC

corresponding transition point of an ideal conversion. It means the deviation, in LSB,

SNR = (1.763 + 6.02 b ) dB

As first step of the project, a MATLAB-based system level analysis is performed. A

Design of a Very Low Power SAR ADC

Figure 9: Simulink Model

Figure 10: SAR Logic Simulink Model

Design of a Very Low Power SAR ADC

Figure 11: Comparator Simulink Model

Figure 12: Capacitor Array Simulink Model

Design of a Very Low Power SAR ADC

For our 8bits ADC, ideally

SNR = (1.763 + 6.02 b ) = 49.92dB

Figure 13: Monte Carlo simulation results for capacitance mismatch

Design of a Very Low Power SAR ADC

SAR ADC Building Blocks

SAR ADC Building Blocks

Figure 14: Performances vs. leakage power in 90nm technology

Design of a Very Low Power SAR ADC

SAR ADC Building Blocks

Fully Differential vs. Single Ended

Design of a Very Low Power SAR ADC

SAR ADC Building Blocks

Digital to Analog Converter DAC Topologies

In charge-redistribution SAR analog to digital converter, a large amount of power is

Binary Weighted Switched Capacitor Array DAC

Design of a Very Low Power SAR ADC

SAR ADC Building Blocks

The energy to charge Vin on Ctot= 256 C0. that is

Design of a Very Low Power SAR ADC

SAR ADC Building Blocks

Junction-Splitting Capacitor Array