UNISONIC TECHNOLOGIES CO.

, LTD
UK2996

MOSFET

600V SILICON N-CHANNEL

POWER MOSFET
1

DESCRIPTION

TO-220

The UK2996 is an N-channel enhancement mode field-effect

power transistor. Intended for use in high voltage, high speed
switching applications in power supplies, DC-DC converter, relay
drive and PWM motor drive controls.

FEATURES

* Fast switching times

* Improved inductive ruggedness
* High forward transfer admittance
* Low on resistance
* Low leakage current
* Lower input capacitance

TO-220F

*Pb-free plating product number: UK2996L

SYMBOL
2. Drain

1. Gate

3. Source

ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
UK2996-TA3-T
UK2996L-TA3-T
UK2996-TF3-T
UK2996L-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source

Package
TO-220
TO-220F

Pin Assignment
1
2
3
G
D
S
G
D
S

Packing
Tube
Tube

UK2996L-TA3-T
(1)Packing Type

(1) T: Tube

(2)Package Type

(2) TA3: TO-220, TF3: TO-220F

(3)Lead Plating

(3) L: Lead Free Plating, Blank: Pb/Sn

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MOSFET

ABSOLUTE MAXIMUM RATING

PARAMETER
Drain to Source Voltage
Continuous Drain Current
Pulsed Drain Current

SYMBOL
VDSS
ID
IDM

RATINGS
600
10
30

VDGR
VGSS
IAR
EAS
EAR
PD
TJ

600
30
10
252
4.5
45
-55 ~ +150

Drain to Gate Voltage (RGS = 20 k)

Gate to Source Voltage
Avalanche Current
Single Pulsed Avalanche energy (Note 2)
Repetitive Avalanche Energy (Note 3)
Total Power Dissipation (Tc = 25)
Operating Temperature Range

UNIT
V
A
A
V
V
A
mJ
mJ
W

Storage Temperature
TSTG
-55 ~ +150

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 4.41 mH, IAR = 10 A, VDD = 90 V, RG = 25 , starting TJ = 25C.
3. Pulse width and frequency is limited by TJ.

THERMAL DATA
CHARACTERISTICS
Thermal Resistance, Channel to Ambient
Thermal Resistance, Channel to Case

SYMBOL
JA
JC

RATINGS
62.5
2.78

UNIT
/ W
/ W

ELECTRICAL CHARACTERISTICS (Ta = 25C)

PARAMETER
SYMBOL
TEST CONDITIONS
GateSource Breakdown Voltage
BVGSS VDS = 0V, IG = 10A
DrainSource Breakdown Voltage
BVDSS VGS = 0V, ID = 10mA
Gate Threshold Voltage
VGS(TH) VDS = 10V, ID = 1mA
Gate Source Leakage Current
IGSS
VGS = 25V, VDS = 0V
Drain Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
Static DrainSource ON Resistance RDS (ON) VGS = 10V, ID = 5A
Forward Transconductance
gFS
VDS = 10V, ID = 5A
Input Capacitance

MIN TYP MAX UNIT

30
V
600
V
2.0
4.0
V
10 A
100 A
0.74 1. 0
3.4 6.8
S

CISS

1500
VDS = 20V, VGS = 0V, f = 1MHz

Reverse Transfer Capacitance

CRSS

Output Capacitance

COSS

140

QG

38

Total Gate Charge

13

ID = 10A, VDD 400V, VGS = 10V

GateSource Charge

QGS

GateDrain Charge

QGD

17

tON
tR
tOFF

55
15
145

Turn-on Delay Time

Turn-on Rise Time
Turnoff Delay Time

RL =60

21

I D=5A

pF

nC

VOUT
Switching
Time

10V
VGS
Turn-off Fall Time

tF

0V

ns

50

27

VDD 300V
tP=10s, Duty 1%

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MOSFET

SOURCEDRAIN DIODE CHARACTERISTICS (Ta = 25C)

PARAMETER
SYMBOL
TEST CONDITIONS
Diode Forward Voltage
VSD
VGS = 0V, IS = 10A
Continuous Source Current (body diode)
IS
Integral Reverse p-n Junction

MIN

TYP MAX UNIT

-1.7
V
10
A

Diode in the MOSFET

Drain

Pulse Source Current (body diode)

ISM

30

Gate
Source
Reverse Recovery Time
Reverse Recovery Charge

tRR
QRR

VGS = 0V, IS = 10A,

dIF/dt = 100 A/s

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1600
17

ns
C

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MOSFET

TEST CIRCUIT AND WAVE FORM

LL

VDS

BVDSS
I AR

ID

RG
DUT

+15V
-15V

ID (t)

VDD

VDS (t)

VDD

tP

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tP

Time

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MOSFET

TYPICAL CHARACTERISTICS

Drain Current, ID (A)

10

5.5V

COMMON
SOURCE
TC=25
8 PULSE TEST

5.25V

5V

4.75V

4.5V
2
0

VGS=4V
0

12

16

20

Drain-Source on Resistance, RDS (ON) ()

Drain Current vs. Drain-Source Voltage

2.2
2
1.8
1.6

12

1.2
1.0

Drain Current, ID (A)

10
8
6

100
4

25
T C=-55

2
0

0.4
0.2
0
0.3 0.5

16

1
3 5
10
Drain Current, ID (A)

30

Drain-Source Voltage vs. Gate-Source

Voltage
COMMON
SOURCE
TC=25
PULSE TEST

12

I D=10A
8
I D=5A

ID=2.5A
0

4
8
12
16
Gate-Source Voltage, VGS (V)

20

Continuous Source Current vs. DrainSource Voltage

30
Continuous Source Current, I S (A)

12
2
4
6
8
10
Gate-Source Voltage, VGS (V)

VGS=10V

0.8
0.6

16
Drain-Source Voltage, VDS (V)

COMMON
SOURCE
VDS =10V
PULSE TEST

COMMON
SOURCE
TC=25
PULSE TEST

1.4

Drain-Source Voltage, VDS (V)

Drain Current vs. Gate-Source Voltage

Drain-Source on Resistance vs.

Drain Current

COMMON SOURCE
TC=25
PULSE TEST

10
5
3

10

1
0.5
0.3
0.1

VGS =0V

-0.4
-0.8
Drain-Source Voltage, VDS (V)

-1.2

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MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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