Power Transistors

2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Complementary to 2SB1299

Unit: mm
0.70.1

Absolute Maximum Ratings

Parameter

(TC=25C)

Symbol

Collector to

2SD1273

base voltage

2SD1273A

Collector to

2SD1273

emitter voltage 2SD1273A

Ratings
80

VCBO

100
60

VCEO

Unit

80

Peak collector current

ICP

Collector current

IC

Base current

IB

40

PC

Junction temperature

Tj

Storage temperature

Tstg

Electrical Characteristics
Parameter
2SD1273

current

2SD1273A

16.70.3

4.20.2

7.50.2

0.5 +0.2
0.1

2.540.25

1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)

2
150

55 to +150

(TC=25C)
Symbol

Collector cutoff

0.80.1

1.30.2

5.080.5

Ta=25C

1.40.1

VEBO

dissipation

3.10.1

Emitter to base voltage

Collector power TC=25C

2.70.2

4.0

High foward current transfer ratio hFE

Satisfactory linearity of foward current transfer ratio hFE
Full-pack package which can be installed to the heat sink with
one screw

14.00.5

4.20.2

5.50.2

Solder Dip

Features

10.00.2

ICBO

Conditions

min

typ

max

VCB = 80V, IE = 0

100

VCB = 100V, IE = 0

100

Unit
A

Collector cutoff current

ICEO

VCE = 40V, IB = 0

100

Emitter cutoff current

IEBO

VCB = 6V, IC = 0

100

VCEO

IC = 25mA, IB = 0

Forward current transfer ratio

hFE*

VCE = 4V, IC = 0.5A

Collector to emitter saturation voltage

VCE(sat)

IC = 2A, IB = 0.05A

Transition frequency

fT

VCE = 12V, IC = 0.2A, f = 10MHz

Collector to emitter

2SD1273

voltage

2SD1273A

*h

FE

60

80
500

2500
1
50

V
MHz

Rank classification

Rank
hFE

500 to 1000 800 to 1500 1200 to 2500

Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.

Power Transistors

2SD1273, 2SD1273A

PC Ta

IC VCE

(1)

40

30

20

(2)

10

5
IB=1.2mA

TC=25C

1.0mA
0.8
0.7mA
0.6mA
0.6

0.5mA
0.4mA

0.4
0.3mA
0.2mA
0.2

20

40

60

80 100 120 140 160

25C
2
25C

0
0

Ambient temperature Ta (C)

10

12

Collector to emitter voltage VCE (V)

VCE(sat) IC

hFE IC

3000

25C
0.3
0.1
0.03
0.01
0.01 0.03

0.1

0.3

300
100
30
10
3

0.1

0.3

10
ICP
t=1ms
IC
10ms
DC
0.3

0.01
3

10

30

2SD1273A

2SD1273

0.1
0.03

100

300

Collector to emitter voltage VCE

10

1000

(V)

0.1

0.3

Collector current IC (A)

Rth(t) t

Thermal resistance Rth(t) (C/W)

Non repetitive pulse

TC=25C

30

1
0.01 0.03

10

103

100

Area of safe operation (ASO)

30

300

Collector current IC (A)

100

(1) Without heat sink

(2) With a 100 100 2mm Al heat sink

102

(1)

(2)

10

101

102
104

1.2

1000

25C
25C

1
0.01 0.03

10

1.0

VCE=12V
f=10MHz
TC=25C

3000

TC=100C

Transition frequency fT (MHz)

25C

0.8

fT IC

1000

TC=100C

0.6

VCE=4V

Forward current transfer ratio hFE

10

0.4

10000

IC/IB=40
30

0.2

Base to emitter voltage VBE (V)

10000

100

Collector current IC (A)

Collector current IC (A)

TC=100C
3

0.1mA
0

(3)
(4)
0

Collector current IC (A)

(1) TC=Ta
(2) With a 100 100 2mm
Al heat sink
(3) With a 50 50 2mm
Al heat sink
(4) Without heat sink
(PC=2W)

Collector to emitter saturation voltage VCE(sat) (V)

IC VBE

1.0

Collector current IC (A)

Collector power dissipation PC (W)

50

103

102

101

Time t (s)

10

102

103

104

10