Bulletin I25173 rev.

C 03/03

ST303S SERIES
Stud Version

INVERTER GRADE THYRISTORS

Features
Center amplifying gate

300A

High surge current capability

Low thermal impedance
High speed performance

Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters

Major Ratings and Characteristics

Parameters

ST303S

Units

300

65

471

@ 50Hz

7950

@ 60Hz

8320

@ 50Hz

316

KA2s

@ 60Hz

288

KA2s

400 to 1200

tq

10 - 20

TJ

- 40 to 125

IT(AV)
@ TC
IT(RMS)
ITSM

I2t

V DRM /V RRM

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case style
TO-209AE (TO-118)

ST303S Series
Bulletin I25173 rev. C 03/03

ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage

V DRM /V RRM, maximum

VRSM , maximum

I DRM/I RRM max.

Code

repetitive peak voltage

non-repetitive peak voltage

@ TJ = TJ max.

mA

400

500

Type number

04
ST303S

08

800

900

12

1200

1300

50

Current Carrying Capability

ITM

Frequency

ITM

ITM

180 el

180oel

Units

100s

50Hz
400Hz

670
480

470
330

1050
1021

940
710

5240
1800

4300
1270

1000Hz

230

140

760

470

730

430

2500Hz

35

150

90

Recovery voltage Vr
Voltage before turn-on Vd

50

50

50

50

50

V DRM

V DRM

50
V DRM

Rise of on-state current di/dt

50

50

A/s

Case temperature

40

65

40

65

40

65

Equivalent values for RC circuit

10 / 0.47F

10 / 0.47F

10 / 0.47F

On-state Conduction
Parameter
I T(AV)

ST303S

Units Conditions

Max. average on-state current

300

@ Case temperature

65

180 conduction, half sine wave

I T(RMS) Max. RMS on-state current

471

DC @ 45C case temperature

I TSM

Max. peak, one half cycle,

7950

t = 10ms

non-repetitive surge current

8320

I 2t

Maximum I2t for fusing

reapplied

6690

t = 10ms

100% VRRM

7000

t = 8.3ms

reapplied

Sinusoidal half wave,

316

t = 10ms

No voltage

Initial TJ = TJ max

288

t = 8.3ms

reapplied

t = 10ms

100% VRRM

t = 8.3ms

reapplied

KA2s

204
I t
2

Maximum I t for fusing

2

No voltage

t = 8.3ms

224

3160

KA s
2

t = 0.1 to 10ms, no voltage reapplied

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ST303S Series
Bulletin I25173 rev. C 03/03

On-state Conduction
Parameter
V TM

Max. peak on-state voltage

V T(TO)1 Low level value of threshold

voltage
V T(TO)2 High level value of threshold
voltage
rt1

ST303S

Units

2.16
1.44

0.57

rt2

High level value of forward

slope resistance

0.56

IH

Maximum holding current

600

IL

Typical latching current

1000

(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.

(I > x IT(AV)), TJ = TJ max.

1.46

Low level value of forward

slope resistance

Conditions
ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse

(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.

(I > x IT(AV)), TJ = TJ max.

mA

T J = 25C, I T > 30A

T J = 25C, V A= 12V, Ra = 6, I G = 1A

Switching
Parameter
di/dt

Max. non-repetitive rate of rise

of turned-on current

ST303S
1000

td

Typical delay time

0.80

tq

Max. turn-off time

10 - 20

Units

Conditions

A/s

TJ = TJ max, VDRM = rated VDRM

ITM = 2 x di/dt
TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s

Resistive load, Gate pulse: 10V, 5 source

TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s
VR = 50V, tp = 500s, dv/dt = 200V/s

Blocking
Parameter

ST303S

Units

Conditions
TJ = TJ max, linear to 80% VDRM, higher value
available on request

dv/dt

Maximum critical rate of rise of

off-state voltage

500

V/s

IRRM
IDRM

Max. peak reverse and off-state

leakage current

50

mA

ST303S

Units

TJ = TJ max, rated V DRM/V RRM applied

Triggering
Parameter
PGM

Maximum peak gate power

PG(AV) Maximum average gate power

10

IGM

Max. peak positive gate current

10

+VGM

Maximum peak positive

gate voltage

20

-VGM

Maximum peak negative

gate voltage

IGT

Max. DC gate current required

to trigger

VGT

Max. DC gate voltage required

to trigger

TJ = TJ max, f = 50Hz, d% = 50

TJ = TJ max, tp 5ms

TJ = TJ max, tp 5ms

200

mA

TJ = 25C, VA = 12V, Ra = 6

IGD

Max. DC gate current not to trigger

20

mA

VGD

Max. DC gate voltage not to trigger

0.25

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Conditions

60

TJ = TJ max, rated VDRM applied

ST303S Series
Bulletin I25173 rev. C 03/03

Thermal and Mechanical Specifications

Parameter

ST303S

TJ

Max. junction operating temperature range

-40 to 125

Tstg

Max. storage temperature range

-40 to 150

Units
C

RthJC

Max. thermal resistance, junction to case

0.10

RthCS

Max. thermal resistance, case to heatsink

0.03

Mounting torque, 10%

48.5

Nm

(425)

(Ibf-in)

535

wt

Approximate weight
Case style

Conditions

DC operation
K/W

Mounting surface, smooth, flat and greased

TO-209AE (TO-118)

Non lubricated threads

See Outline Table

RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)

Conduction angle

Sinusoidal conduction Rectangular conduction Units

180

0.011

Conditions

0.008

120

0.013

0.014

90

0.017

0.018

60

0.025

0.026

30

0.041

0.042

K/W

TJ = TJ max.

Ordering Information Table

Device Code

ST

30

12

- Thyristor

- Essential part number

- 3 = Fast turn off

- S = Compression bonding Stud

- Voltage code: Code x 100 = VRRM (See Voltage Ratings table)

- P = Stud base 3/4" 16UNF-2A

- Reapplied dv/dt code (for tq test condition)

- tq code
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)

1 = Fast-on terminals (Gate and Aux. Cathode Leads)

dv/dt - tq combinations available

dv/dt (V/s)

200

tq(s)
up to 800V

10
20

FN
FK

tq(s)
only for
1000/1200V

20

FK

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ST303S Series
Bulletin I25173 rev. C 03/03

Outline Table
CERAMIC HOUSING
22 (0.87) MAX.

4.5 (0.18) MAX.

MI
N.

9.
5(
0 .3
7)
MI
N.

4.3 (0.17) DIA.

WHITE GATE

RED SILICON RUBBER

245 (9.65) 10 (0.39)

FLEXIBLE LEAD
RED CATHODE

WHITE SHRINK

C.S. 50mm 2
(0.078 s.i.)

Fast-on Terminals

AMP. 280000-1
REF-250

47 (1.85)
MAX.

21 (0.82) MAX.

RED SHRINK

MAX.

245 (9.65)

255 (10.04)

38 (1.50)
MAX. DIA.

27.5 (1.08)

22
(

0.8
6)

10.5 (0.41)
NOM.

SW 45

3/4"16 UNF-2A
49 (1.92) MAX.

Case Style TO-209AE (TO-118)

All dimensions in millimeters (inches)

130
ST303SSeries
RthJC (DC) = 0.10 K/ W

120
110

Conduc tion Angle

100
90

30
60

80

90
120

70

180

60
0

50

100

150

200

250 300

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

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350

Maximum Allowable Case Temperature (C)

Maximum Allowable Case Temperature (C)

* FOR METRIC DEVICE: M24 X 1.5 - LENGHT 21 (0.83) MAX.

CONTACT FACTORY

130

ST303SSeries
RthJC (DC) = 0.10 K/ W

120
110
100

Conduction Period

90
80
70

30
60

60

90
120

50

180

DC

40
0

100

200

300

400

500

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

ST303S Series
600

0.5 K
/

ta
el
-D

100

ST303SSeries
TJ = 125C

W
K/

Conduction Angle

01
0.

200

K/
W
0.
08
K/
0.1 W
2K
/W
0.1
6K
/W
0.2
K/
W
0.3
K/ W

RMSLimit

300

W
K/

400

0.
06

SA

180
120
90
60
30

500

h
R t

03
0.

Maximum Average On-state Power Loss (W)

Bulletin I25173 rev. C 03/03

0
0

50

100

150

200

250

300
25

Average On-state Current (A)

50

75

100

125

Maximum Allowab le Ambient Temperature (C)

Maximum Average On-state Power Loss (W)

Fig. 3 - On-state Power Loss Characteristics

900
DC
180
120
90
60
30

800
700
600

R
th
S

A =
0.
0.
03
01
K/
K/
W
W
0.0
-D
6K
el
/W
ta

500

0.1
2

400

RMSLimit

300

Conduction Period

200

ST303SSeries
TJ = 125C

100

K/ W

0.2
K/ W
0.3
K/ W
0.5 K/
W

0
0

50 100 150 200 250 300 350 400 450 500

25
Average On-state Current (A)

50

75

100

125

Maximum Allowable Ambient Temperature (C)

7000

At Any Rated Load Condition And With

Rated VRRM Applied Following Surge.
Initial TJ = 125C
@60 Hz 0.0083 s
@50 Hz 0.0100 s

6500
6000
5500
5000
4500
4000

ST303S Series

3500
3000
1

10

100

Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-repetitive Surge Current

Peak Half Sine Wave On-state Current (A)

Peak Half Sine Wave On-state Current (A)

Fig. 4 - On-state Power Loss Characteristics

8000

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
7000
Initial TJ = 125C
No Voltage Reapplied
6500
Rated VRRM Reapplied
6000
7500

5500
5000
4500
4000
ST303SSeries
3500
3000
0.01

0.1

Pulse Train Duration (s)

Fig. 6 - Maximum Non-repetitive Surge Current

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ST303S Series
Bulletin I25173 rev. C 03/03
Transient Thermal Impedance Z thJC (K/ W)

Instantaneous On-state Current (A)

10000

1000
TJ = 25C
TJ = 125C
ST303S Series
100
1

1
Steady State Value
R thJC = 0.10 K/ W
(DC Operation)
0.1

0.01
ST303S Series

0.001
0.001

TM

300
280
260

= 500 A
300 A
200 A
100 A
50 A

240
220
200
180
160
ST303S Series
TJ = 125 C

140
120
100
80
10

20 30

40 50

0.1

10

Fig. 8 - Thermal Impedance ZthJC Characteristic

Maximum Reverse Recovery Current - Irr (A)

Maximum Reverse Recovery Charge - Qrr (C)

Fig. 7 - On-state Voltage Drop Characteristics

320

0.01

Square Wave Pulse Duration (s)

Instantaneous On-state Voltage (V)

60 70 80 90 100

180
ITM = 500 A
300 A
200 A
100 A
50 A

160
140
120
100
80

ST303S Series
TJ = 125 C

60
40
20
10

Rate Of Fall Of On-state Current - di/ dt (A/ s)

20 30

40 50

60 70 80 90 100

Rate Of Fall Of On-state Current - di/ dt (A/ s)

Fig. 9 - Reverse Recovered Charge Characteristics

Fig. 10 - Reverse Recovery Current Characteristics

Peak On-state Current (A)

1E4

1000

1E3

500

400 200 100

1000

1500

Snubb er circ uit

Rs = 10 ohms
Cs = 0.47 F
V D = 80% VDRM

2000

1E2

2500

1E2

1E3

1E1
1E4
1E
4 1E1

500

400 200

50 Hz

ST303SSeries
Sinusoidal pulse
TC = 65C

tp

1E2

100

Snubb er circuit
Rs = 10 ohms
Cs = 0.47 F
V D = 80% VDRM

1500

ST303SSeries
Sinusoidal pulse
TC = 40C

tp

1E1
1E1

50 Hz

1E3

1E4

Pulse Basewidth (s)

Pulse Basewidth (s)

Fig. 11 - Frequency Characteristics

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ST303S Series
Bulletin I25173 rev. C 03/03

Peak On-state Current (A)

1E4

1E3
500

400 200

100

50 Hz
400

1000
2000

Snub ber c ircuit

R s = 10 ohms
C s = 0.47 F
V D = 80% VDRM

1500

2500

1E1

ST303SSeries
Trapezoidal pulse
TC = 40C
di/ dt = 50A/ s

1E0
1E1

1E2

50 Hz

1000

Snub ber c ircuit

Rs = 10 ohms
Cs = 0.47 F
V D = 80% VDRM

1500

1E2

100

200

500

2000

1E4
1E1
1E41E1

1E3

ST303SSeries
Tra pezoidal pulse
TC = 65C
di/ dt = 50A/ s

1E2

Pulse Basewidth (s)

1E3

1E4

Pulse Basewidth (s)

Fig. 12 - Frequency Characteristics

Peak On-state Current (A)

1E4

1E3

400

200 100

50 Hz

500
1000

Snub ber circ uit

Rs = 10 ohms
Cs = 0.47 F
V D = 80% VDRM

2000

1E1

100

50 Hz

500

1000
1500

1E2

200

400

Snub ber c irc uit

R s = 10 ohms
C s = 0.47 F
V D = 80% VDRM

1500

2500

tp

1E0
1E1

2000

ST303SSeries
Trapezoidal pulse
TC = 40C
di/ dt = 100A/ s

1E2

tp

1E1
1E4
1E41E1

1E3

ST303SSeries
Tra pezoidal pulse
TC = 65C
di/ dt = 100A/ s

1E2

Pulse Basewidth (s)

1E3

1E4

Pulse Basewidth (s)

Fig. 13 - Frequency Characteristics

Peak On-state Current (A)

1E5

tp

ST303SSeries
Rec ta ngular pulse
d i/d t = 50A/ s

20 joules p er pulse

1E4
3

10

20 joules p er pulse
10

2
1

1E3

5
2

0.5

0.4

0.5

1E2
ST303SSeries
Sinusoidal pulse

tp

1E1
1E1

0.4

1E2

1E3

Pulse Basewidth (s)

1E
1E4
1E
4 1E
11

1E2

1E3

1E4

Pulse Basewidth (s)

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

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ST303S Series
Bulletin I25173 rev. C 03/03
100
Instantaneous Gate Voltage (V)

Rec tangular gate pulse

a) Rec ommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 s
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
10
tr<=1 s

(1) PGM = 10W,

(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,

tp
tp
tp
tp

= 20ms
= 10ms
= 5ms
= 3.3ms

(a)
(b)
Tj=25 C

Tj=-40 C

Tj=125 C

(1)

(2)

(3) (4)

VGD
IGD
0.1
0.001

0.01

Device: ST303S Series

0.1

Frequency Limited by PG(AV)

1

10

100

Instantaneous Gate Current (A)

Fig. 15 - Gate Characteristics

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03 /03

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