MUHAMMAD OMER FAROOQ, MSC Dissertation, Communication-Engineering, 2009, Student ID 7367100 Complete

Complex Permittivity of Dielectric Materials with
Periodic Discontinuities
A dissertation submitted to The University of

Manchester for the degree of Master of Science in the
Faculty of Engineering and Physical Sciences
2009
Muhammad Omer FAROOQ.

Student ID: 7367100
Table of Contents
Table of Contents
Section
Page Number
List of Figures....4
List of Tables..7
Abstract........11
Declaration...12
Copyright.12
Acknowledgements..13
Abbreviations...14
Symbols16
1. Introduction............................................................................................18
1.1. Aims and Objectives of the project...........20
2. Literature Review...22
3. Back-Ground Theory.....26
3.1. Dielectrics, Polarization and Permittivity.............26
3.1.1. Basic Concept of Polarization..27
3.1.2. Dipole in Time Harmonic Field29
3.2. Complex Permittivity...30
3.2.1. The Classical Spring Model..30
3.2.2. Limitation of Classical Spring Model...........35
3.3. Waveguides..35
3.3.1. General Solution for TEM, TE and TM Waves...36
3.4. Rectangular wave guide...38
3.4.1. TE Mode...39
M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering
The Electromagnetic Centre, University of Manchester, U.K.
Table of Contents
3.4.2. TM Mode......40
3.5. Scattering by Conducting Wedge.....42
3.6. Maxwell-Garnett Mixing Theory.........43
3.7. S-Parameters........44
4. Extraction of Complex Permittivity from S-Parameters...47
4.1. Two Independent Ways of Obtaining S-Parameters........47
4.2. Conversion of Scattering Matrix to ABCD Matrix..48
4.3. Example of 4-Layer Problem...49
4.4. Deembedding of ABCD Matrix of Profiled Layer...50
4.5. Calculation of Complex Permittivity of Profiled Layer from its
ABCD Matrix.................................51
4.6. Software Used for the Calculation of Complex Permittivity...53
5. HFSS Simulation and Its Results..........................................................54
5.1. Introduction to the Software.....54
5.2. Technique Used........54
5.2.1. The Finite Element Method..54
5.2.2. Size of Mesh vs. Accuracy...........55
5.3. Meshing and its Effect on Simulation Results......55
5.3.1. General Observation during the simulation..55
5.4. Developing the Model in HFSS and Results........56
5.4.1. Slots..57
5.4.2. 60 Degree Grooves...61
5.4.3. 90 Degree Grooves...63
5.4.4. 120 Degree Grooves.66
6. Experimental Setup........69
6.1. Vector Network Analyzer (VNA).............69
6.1.1. Calibration........72
6.2. Material Used and ....72
6.3. Sample Preparation.......73
Table of Contents
6.4. Different Sizes and Shapes of the Interface.....73

6.4.1. Rectangular slots......74
6.4.2. 60 Degrees Grooves.76
6.4.3. 90 Degree Grooves.......77
6.4.4. 120 Degree Grooves.78
6.5. Previously Obtained Experimental Results and Problems with
Them.80
6.6. Technical Difficulties ......82
6.7. Steps Involve in this Method ..........................................................83
6.8. Experimental Results...84
7. Conclusions and Empirical Formulae Derived..92
8. Reference..............................................................................................108
Appendix A Calibration of VNA................................................................................111
Appendix B Already Known Experimental Results ..113
Appendix C Example for the Calculation of Complex Permittivity...114
Appendix D C++ Programs Used for calculation of Complex Permittivity ..........116
Appendix E Simulation Results..............126
Appendix F Experimental Results..160
Appendix G Datasheet of Perspex..180
( )
Appendix H Why Im *
of experimental results are positive in number of
cases..................................................................................182
Appendix I Feasibility Study Report..............................................................................184
Word count: 20,536 words

List of Figures
List of Figures
Figure__
Page Number
Chapter-3
Figure-3.2.1 Polarization of non polar molecule in electric field27
Figure-3.2.2 Atomic dipole model........................................................................................31
Figure-3.2.3 Oscillation of the electron about the nucleus31
Figure-3.2.3 Plot of the real and imaginary parts of the resonant susceptibility res 34
Figure-3.5.1 Standard rectangular wave guides.39
Figure-3.5.2 Rectangular Waveguide.40
Figure-3.6.1 Electric line source near a two dimensional conducting wedge, reference at
bisector...42
Figure-3.7.1 An arbitrary N-port microwave network............................................................46
Chapter-4
Figure-4.2.1. A two port network...48
Figure-4.3.1. 2 and 4-Layer Problem with the plane of calibration specified in each case49
Chapter-5
Figure-5.4.1. 4-Layers of the problem with specified dimension used in simulating each
case..56
Figure-5.4.3. Three Dimensional model developed in HFSS for simulation.....57
Chapter-6
Figure-6.1.1. VNA used in this project...70
Figure-6.1.2 VNA connected with the wave guide with sample for the measurement of Sparameters..71
List of Figures
Figure-6.1.3 5.8mm thick Cell which hold the sample inside the waveguide71
Figure-6.1.4 Actual practical setup for the measurement of S-parameters.72
Figure-6.2.1. Perspex prepared sample placed on the cell..73
Figure-6.4.1. Picture of rectangular slots used...75
Figure-6.4.2. Profile layer having regular, periodic and rectangular grooves75
Figure-6.4.3. Picture of all the samples of 60 Degrees Grooves76
Figure-6.4.4. Profile layer having regular and periodic grooves and discontinuities.77
Figure-6.4.5. Picture of all the samples of 90 Degrees Grooves78
Figure-6.4.6. Profile layer having regular and periodic grooves and discontinuities.78
Figure-6.4.7. Picture of all the samples of 120 Degrees Grooves..79
Figure-6.4.8. Profile layer having regular and periodic grooves and discontinuities with
dimensions.80
Figure-6.5.1. Plot of real part of complex permittivity for slots and grooves of different angles
and material fill factor at 6GHz. In addition to this the Maxwell-Garnett mixing
curve is also plotted which is independent of frequency...82
Figure-6.5.2. Plot of real part of complex permittivity for slots and grooves of different angles
and material fill factor at 8GHz. In addition to this the Maxwell-Garnett mixing
curve is also plotted which is independent of the frequency.....82
Chapter-7
Figure-7.1. Plot of real part of complex permittivity using experimental data, Maxwell-Garnett
mixing rule and amended Maxwell-Garnett rule at 6GHz for the case of
slots95

List of Figures
mixing rule and amended Maxwell-Garnett rule at 8GHz for the case of
slots95
mixing rule and amended Maxwell-Garnett rule at 6GHz for the case of 60 degree
grooves...98
grooves.......................98
grooves.....101
grooves.101
mixing rule and amended Maxwell-Garnett rule at 6GHz for the case of 120
degree grooves.....103
mixing rule and amended Maxwell-Garnett rule at 8GHz for the case of 120
degree grooves.....103

List of Tables
List of Tables
Chapter-3
Table 3.5.1: Characteristics of the rectangular wave guide........41
Chapter-5
Table-5.4.1. Complex permittivity of slots with 1.4mm pitch....58
Table-5.4.2. Complex permittivity of slots with 1.7mm pitch............58
Table-5.4.4. Complex permittivity of slots with 2.0mm pitch, with depth of 0.577mm59
Table-5.4.5. Complex permittivity of slots with 2.5mm pitch................59
Table-5.4.6. Complex permittivity of slots with 3.0mm pitch....59
Table-5.4.10. Complex permittivity of 60 degree grooves having1.2mm pitch.61
Table-5.4.13. Complex permittivity of 60 degree grooves having1.7mm pitch.........62
Table-5.4.14 Complex permittivity of 60 degree grooves having 2.0mm pitch.62
Table-5.4.16 Complex permittivity of 60 degree grooves having 3.0mm pitch.........63
Table-5.4.18 Complex permittivity of 90 degree grooves having 2.31mm pitch...64
List of Tables

Table-5.4.24 Complex permittivity of 120 degree grooves having4.0mm pitch66
Chapter-6
Table-6.4.1. Slots of different sizes pitches and air fill factor74
Table-6.4.2. Grooves with 60 degree angle with different pitches and air fill factor. ...76
Table-6.4.3. Grooves with 90 degree angle with different pitches and air fill factor.77
Table-6.4.4. Grooves with 120 degree angle with different pitches and air fill factor...79
Table-6.8.1. Measured values of Complex permittivity for the case of slots with 4.0mm
pitch84
pitch84
pitch85
pitch85
pitch86
Table-6.8.6. Measured values of Complex permittivity for the case of 60 degrees grooves with
1.2mm pitch86

List of Tables
1.3mm pitch87
2.5mm pitch87
3.0mm pitch87
Table-6.8.10. Measured values of Complex permittivity for the case of 90 degrees grooves
with 2.0mm pitch88
with 4.0mm pitch88
with 5.0mm pitch89
with 6.0mm pitch89
with 4.0mm pitch89
with 5.0mm pitch90
with 6.0mm pitch90
with 7.0mm pitch90
with 8.0mm pitch90

List of Tables
Chapter-7
Table:-7.1. Values of the real pert of complex permittivities for the case of slots obtained from
Experiments, Maxwell-Garnett mixing rule and from Amended Maxwell-Garnett
formula at 6GHz and at 8GHz...94
Table:-7.2. Values of the real pert of complex permittivities for the case of 60 degrees grooves
obtained from Experiments, Maxwell-Garnett mixing rule and from Amended
Maxwell-Garnett formula at 6GHz and at 8GHz..97
Maxwell-Garnett formula at 6GHz and at 8GHz.100
Table:-7.4. Values of the real pert of complex permittivities for the case of 120 degrees
grooves obtained from Experiments, Maxwell-Garnett mixing rule and from
Amended Maxwell-Garnett formula at 6GHz and at 8GHz102
Table-7.5 Amended Maxwell-Garnett formulae in the different cases....104
Table-7.6 Comparison between simulation results and experimental one...105

10
Abstract
Abstract
When a waveguide cell is used to measure the complex permittivity of granular
material, such as wheat grains then errors are introduced because or the irregular interface
caused by the grain. This non-planer interface causes difficulties in measuring the complex
permittivity and introduces errors. In order to understand the phenomenon this project
includes designing, fabricating, testing and modelling a range of periodic discontinuous
surfaces around a wave guide cell with the intention of measuring S-parameters of such
interfaces using a Vector Network Analyser (VNA). From these measurements the complex
permittivity is calculated using a technique called deembedding of the characteristic (ABCD)
matrix of the profiled layer. The approach taken is to fabricate the samples and use the
available test equipment in MACS group material measurement laboratory. Samples were
loaded into the rectangular wave guide (WG-14) cell and the S-parameters were measured
using a VNA and complex permittivity was extracted using a C++ program, which uses the
mathematical technique of deembedding the ABCD matrix for the profiled layer and the
theoretical background of the waveguide theory. In addition the 3-D problem was also
modelled using a commercial software HFSS for different shapes and depth of the profiled
layer. The simulated and experimental results compared well. The outcomes of this project are
a modified Maxwell-Garnett model and methods for estimating the complex permittivity of
periodic interface surfaces as a function of the geometry of the profiled layer.
The range of results for both slots and grooves are tabulated, graphed and modelled.
As a recommendation, this thesis concludes that the original Maxell-Garnett formulation is
sufficient for slots but a modified version, derived here is necessary for grooves see page 104
of this report. It is reasoned that this is due to scattering effect from the angled grooves.
Finally the interface problems associated with characteristic granular materials is therefore
deduced to most likely originate from angular scattering.

The Electromagnetic Centre, University of Manchester, U.K
11
Deceleration
Declaration
No portion of the work referred to in the dissertation has been submitted in support of
an application for another degree or qualification of this or any other university or
other institute of learning.
Copyright
1. Copyright in text of this dissertation rests with the author. Copies (by any
process) either in full, or of extracts, may be made only in accordance with
instructions given by the author. Details may be obtained from the appropriate
Graduate Office. This page must form part of any such copies made. Further
copies (by any process) of copies made in accordance with such instructions
may not be made without the permission (in writing) of the author.
2. The ownership of any intellectual property rights which may be described in
this dissertation is vested in the University of Manchester, subject to any prior
agreement to the contrary, and may not be made available for use by third
parties without the written permission of the University, which will prescribe
the terms and conditions of any such agreement.
3. Further information on the conditions under which disclosures and
exploitation may take place is available from the Head of the School of
Electrical and Electronic Engineering.

12
Acknowledgements
Acknowledgements
I would like to express my sincerest gratitude to my supervisor Professor Andrew Gibson, to
whom I will always be indebted, for his inestimable help and guidance through out the MSc
course and during the dissertation stage.
I would also like to extend my deepest appreciation to Dr. Arthur D Haigh for taking interest
in this project and guiding me at all the time when I needed.
I am thankful to the people working in the workshop on the D-floor of Sackville Street
Building (SSB) for making the samples in time and the precision of the samples.
In the end I would like to thank my parents for their unconditional support particularly my
mother who called me daily from Pakistan, to pray for my success and keeping my moral up
without telling about her health which is not good, so that I can concentrate on my studies.

13
Abbreviations
Abbreviations
2D
Two dimensional
3D
Three Dimensional
AFF
Air Fill Factor
CP
Complex Permittivity
CPF
Coherent Potential Formula
DC
Direct Current
DUT
Device under Test
EM
Electromagnetic
EMA
Effective Medium Approximation
EWS
Electromagnetic Wave Scattering
FDTD
Finite Difference time domain
FEM
Finite Element Method
GTD
Geometrical Theory of Diffraction
HM
Hybrid Mode
HFSS
High Frequency Structure Simulator
MG
Maxwell-Garnett
MMA
Methacrylate monomer
MMIC
Monolithic Microwave Integrated Circuit
PAT
Portable Appliance Test
PMMA
Polymethyl Methacrylate
RT
Ray tracing
S-Parameters Scattering Parameters

SWR
Standing Wave Ratio
TE
Transverse Electric Mode

14
Abbreviations
TEM
Transverse electromagnetic mode
TM
Transverse magnetic mode
VDU
Visual Display Unit
VNA
Vector network analyser
VSWR
Voltage standing wave ratio.
WG
Waveguide

15
Symbols
Symbols
eff = effective permittivity.
0 = Absolute permittivity of free space.

* = Relative complex permittivity.
r = Relative permittivity.
= Real part of complex permittivity.
= Imaginary part of complex permittivity
f = M f = Material fill factor.
A f = Air fill factor.

P = Macroscopic polarization vector.

p = Dipole moment.
e = Electric susceptibility.
res = Susceptibility at resonance.
e = Electronic charge.
m = Mass of electron.
d = Damping factor.
= Angular frequency.
I = Electric current.
V = Voltage.

E = Electric field intensity.

H = Magnetic field intensity.

D = Electric flux density.

B = Magnetic flux density.
qm = Magnetic charge.

16
Symbols
= Electric conductivity.
E t = Tangential component of electric field.
H t = Tangential component of magnetic field.
= Phase constant.
kc = Cut-off wave number.
k = Wave number.
= Free space wavelength.
c = cut-off wavelength.
g = Guide wavelength.
v p = Phase velocity.
d = Attenuation constant.
tan ( ) = Loss tangent.
Vn+ = Amplitude of the voltage wave incident on port n
Vn = Amplitude of the voltage wave reflected from port n

17
Introduction
1. Introduction: Microwave processing is a field of increasing importance and is receiving more attention
particularly in processing materials with a broad range of compositions, sizes and shapes. In
recent years, microwave processing research and development have been expanded into many
new areas such as calculation and measurement of the complex permittivity of materials like
ceramics, polymers, composites, and chemicals as a function of frequency and temperature.
For example it was shown that the complex permittivity of material must be known to control
the microwave processing of ceramics [ 23] . The real and imaginary parts of the complex
permittivity, and respectively are parameters that describe the behaviour of a dielectric
material under the influence of a microwave field. Both affect the power absorbed and the
half-power depth. They also describe how microwaves penetrate and propagate through an
absorbing material, reflect and scatter from the dielectric material, and influence the
volumetric heating of a given material.
So complex permittivity of the material determines not only electrical but also affects the
thermal performance of the material and in general it is a function of frequency and
temperature, hence it is very important to measure this electrical property of materials to
characterize them. Knowledge of complex permittivity of the materials at microwave
frequency is a very important in the description of their physical and chemical properties. It is
also used to differentiate between the materials like in sensors and quality testing such as the
measurement of moister or fat contents in meat products etc.
Some very common examples which show the significance of complex permittivity includes
the operation of household microwave ovens used to heat food. The frequencies used in it to
heat the food stuff is set equal to approximately 2.45 GHz and the corresponding wavelength
is 12.25cm, considering in mind that at this frequency the imaginary part of the complex

18
Introduction
permittivity of water is very high (according to Cole-Cole equation it is approximately -10

at 30 degree centigrade) hence there is lot of electrical energy is being converted in to heat
energy in water at this frequency. As almost all the food contains water hence all microwave
ovens are designed at the above mentioned frequency in order to heat the food stuff. Also to
dry wheat grain and medicines in pharmaceutical industry using microwave techniques as
they may contain water contents hence the frequency of applied electromagnetic wave is so
adjusted to have the maximum heating effect (or loss) that is at that frequency the imaginary
part of the complex permittivity is maximum in magnitude. This needs the complete
knowledge of the complex permittivity of water as a function of frequency. Some more
includes electrosurgery in which the internal bleeding from the tiny blood vessels can be
stopped and diathermy which is the way of making the muscles of human body relaxed using
electrically induced heat shows the importance of the measurement of complex permittivity
and its trends with the frequency.
Often in practice, when particular materials have to be characterized using microwave
technique it is necessary to go through some sample preparation and in order to extract the
complex permittivity from the calibrated measurement setup. Real materials used in industrial
and food processing, frequently came in particulate (powder) form. For example in agro
chemicals, pharmaceutical and food processing industries pallets and grains occur frequently.
These type of granular materials are the most difficult to prepare the experimental
characterization. One particular problem that has been identified when measuring the
microwave characteristics of granular materials is the interface problem, where, the incident
electromagnetic wave is scattered from an irregular interface caused by the granular
properties of the material under test and because of this scattering effect there is a change in
the complex permittivity of the same material. This problem is quoted in the literature [ 6 ] .

19
Introduction
In this project we have designed the systematic approach to understand the irregular interface
problem. These irregularities are implemented in the form of grooves and slots of different
dimensions angles and fill-factor (which depends upon the pitch of grooves or slots) on a
Perspex layer (material used in this work) which is then loaded in a rectangular wave guide
cell (WG-14) to measure S-parameters by using Vector Network Analyzer (VNA). For the
deeper understanding of the problem simulations of the profiled layers in the rectangular
waveguide are performed on commercial software HFSS to get S-parameters. Then these Sparameters are used to calculate complex permittivity of the profiled layer using a technique
called Deembedding a characteristic matrix using the complex permittivity of the Perspex
layer which is calculated to be * = 2.62 j 0.02 used the S-parameters which are taken from
the VNA and the length of the layers. It is demonstrated that the approximate formulae like
Maxwell-Garnett equations produces a close fit with very small error to measured and
simulated effective permittivity for the case of slots. Different angles like 60, 90 and 120
degrees of grooves produces different scattering patterns results in different complex
permittivity does not seems to obey original Maxwell-Garnett mixing rule. Hence 8 new
different formulae are calculated here empirically using the numerical techniques which uses
matrix algebra to solve homogeneous simultaneous linear equations and experimental data for
different shapes of discontinuities (slots and grooves). Out of the 8 different formulas 4 are
valid at 6GHz and the others 4 formulae are valid for 8GHz. There are some interesting
patterns found in the values of complex permittivities with frequency for a particular groove
and with the air fill factor for the grooves of same dimensions.
1.1. Aim and Objectives of the Project: The main objectives of this project are as follows
1)
Understanding of the Origin of the complex permittivity of dielectric mediums.

20
Introduction
2)
Exploration of the microwave measurement techniques.
3)
Understanding the concept of ray tracing.
4)
Familiarization with software like High frequency Structure simulator (HFSS)

which is very sophisticated three dimensional electromagnetic simulation tool.
5)
Familiarization with the operation and working of vector network analyzer (VNA).
6)
Finally the most important objective of this project is the development of model to
estimate the complex permittivity of 2-phase dielectric medium with regular and
periodic discontinuities by loading them in a rectangular waveguide cell (WG-14).
The project was very challenging and informative. It provide lot of inside and knowledge
about electromagnetic wave theory and electromagnetic wave scattering and because of this
the change in the complex permittivity of the profiled layer.

21
Literature Review
CHAPTER No 2
2. LITERATURE REVIEW
The history of microwave measurement of the complex permittivity of the heterogeneous
mixture and discontinuous interface problem and their electromagnetic analysis is very old.
There are number of different mixing formulas some of them are empirical. Analytical
formulas are also available for the calculation of complex permittivity for example those
derived by Tischer [ 24 ] . In addition to this there are number of different experimental
measurement techniques available for determining the complex permittivity of a material. The
choice of measurement technique depends on number of factors like frequency range, sample
size restriction, expected value of complex permittivity, conducting and non-conducting
nature of the samples, required measurement accuracy, physical conditions of measurements
like temperature and pressure, material properties like homogeneous or isotropic, cost and
form of material like liquid or powder [1,3,4 & 7] .
One of the methods used for the measurement of complex permittivity is the transmission line
technique which is used in this project. This technique was first introduced by Tischer [ 24 ] .
Tischer describe the method of measurement of electromagnetic properties of plasma in
section of wave guide as a test section. This approach has the advantage that it has the
analytical solution by considering the problem as boundary value problem. Tischer in his
paper derived two co-efficient named transmission and reflection co-efficient for this case and
finally the complex permittivity is derived from these co-efficient through analytical means.
Some other methods are, free space technique [ 28] , open ended co-axial probe technique [ 27 ]
and resonant cavity techniques [ 26 ] . Each of them has its own advantages and disadvantages
like the resonant cavity technique is very accurate, narrow band best for low loss materials

22
Literature Review
and it requires high resolution from the instrumentation. Open ended co-axial probe
techniques require no sample preparation; it is broad band, simple and convenient, ideal for
lossy materials and used particularly for liquid and sami-liquid materials. In the free space
technique the complex permittivity of the material is computed for the measurement of
transmission co-efficient and reflection co-efficient. It is a convenient technique for non
conducting materials, best for hostile environments like high temperature and pressure, good
for on-line microwave measurements and useful for large and flat materials.
Calculating or predicting the effective response of an inhomogeneous medium or discontinues
interface problem to incident electric and magnetic excitation is a complex and interesting
problem. It requires the careful and rigorous electromagnetic and polarizability analysis of the
material. Many different mixing rules have been suggested [ 29 ] in addition to the Maxwell
Garnett Theory [1] . For different classes of materials formulas are developed which predict the
value of complex permittivity. Chiral [ 30] and the other magneto-electric [ 31] mixing rules have
appeared in literature in the recent past. These are the deduction from the Maxwell Garnett
paper which was published in 1904. Sihvola [ 6 ] gave the mixing formula to estimate the
macroscopic properties of the heterogeneous two phase mixture by treating one of the
components as a background medium and the other one as inclusions. These inclusions are
assumed to be spherical and randomly distributed through out the background medium. The
simplest dielectric mixing formula for the effective permittivity eff is named after Maxwell
Garnett [1]
eff = o + 3 f o
For a mixture where
o
+ 2 o f ( o )
(2.1)
is permittivity of inclusions in free space background of
permittivity 0 , f is the volume fraction of the inclusion. In [2] a rigorous derivation of

23
Literature Review
Maxwell-Garnett expression that accounts for the density fluctuations of the second medium
on the background medium was given. Sihvola [6 ] states that Maxwell-Garnett (MG) mixing
rule has been widely used in dielectrics studies but critics say that it fails to predict the
behaviour of mixtures with high volume fractions or large dielectric constant between the
components, and agreement with this observation is one of the conclusions of this project
dissertation.
As the large community of scientists dont believe in the complete validity of MaxwellGarnett mixing rule, thus other mixing formulas are also been suggested which can predict the
value of complex permittivity of the mixture of mediums. In [32] , a family of mixing rule has
been presented according to the following
eff
eff o
o
= f
+ 2 o + ( eff o )
+ 2 o + ( eff o )
(2.2)
where the additional dimensionless constant parameters determines the nature of mixing
rule. For = 0 in equation (2.2) reduces to Maxwell-Garnett rule equation (2.1). Sihvola in
his paper [6 ] summarized some of mixing formulas in these words, Other integer values for
gives other well known mixing rules. The value 3 gives the so called coherent potential
formula (CPF). In solid state physics, CPF is known as the GKM rule after Gyorffy, Korrings
and Mills. Correspondingly, = 2 gives the Bottcher mixing rule [33] . In remote sensing
studies, this is sometimes referred to as the Polder-van Santen mixing rule [34 ] . However, often
the = 2 formulais labelled the Bruggeman Formula [35] .
Stroud [3] determines another mixing formula by using the technique named as effective
medium approximation (EMA) and develops the relationship of complex permittivity as the
function of frequency and verifies that with experiment.

24
Literature Review
In this project complex permittivity is measured experimentally for different shapes and
discontinuities of Perspex layers which can be consider homogeneous mixtures of Perspex
and air. An empirical formula is developed for complex permittivity of the mixture of Perspex
and air at 6GHz and 8GHz as a function of material fill factor (MFF) denoted by M f or f
which is defined as the ratio of the volume of inclusion (material) to the total volume of the
mixture. Finally this formula is related to equation (2.2) mentioned in [32] and value of are
calculated for different cases.

25
Background Theory
CHAPTER No 3
3. BACKGROUND THEORY
This chapter includes the background theory needed to understand the work done in this
dissertation project which includes the revision of electrical properties of materials like
polarization, permittivity and concept of complex permittivity. Waveguides, different modes of
electromagnetic waves and Maxwell-Garnett theory is also given here briefly. Finally the
importance and the theory of S-parameters are discussed. For very basic electromagnetic
theory, the reader can go to the references at the end and the appendices.
3.1. Dielectrics and Polarization

All the materials are made up of atoms or molecules, to understand the behaviour of the
material in the electric filed, it is batter to understand the behaviour of atoms and molecules in
electric field.
There are two types of molecules
1) Non-Polar
2) Polar
Following is the description of the behaviour of these two types of molecules in the time
independent and time dependent electric field.
Electric dipole is induced in the non-polar molecule if it is placed in the static electric field
because of the electrostatic force of attraction causes the separation between the positively
charged nucleus and negatively charges electronic cloud and as the result of this separation
not only the potential energy is stored in the molecule against the applied electric field but
also the net electric field reduced because of the following two reasons
1. Electric field induced in the molecule is in opposite direction as that of the applied
field.
26
Background Theory
2. The entire polarized molecules align themselves parallel to each other and to oppose
the applied electric field.
The following Figure-3.2.1 explains the phenomenon of polarization.
Figure-3.2.1 Polarization of non polar molecule in electric field

In case of the polar molecules in weak electric field only alignment takes place such that the
electric field of the molecule is in opposite direction to that of applied field. At high electric
field the separation between positively charged centre and negatively charges electronic cloud
tends to increase and as the result electric potential energy is stored in the dielectric material
against the applied electric field. This separation increases with the increase in the magnitude
of the applied electric field and when the magnitude of electric field reduces it reduces. But
this happen in some specified range of the magnitude of applied electric field which is
determined by the material. If the electric field of high magnitude is applied so that the
positively charge nucleus and negatively charged electronic cloud could not come back to
original position after the removal of electric field that electric field strength is known as the
breakdown field.
3.1.1. Basic Concept of Polarization

One can consider dielectric as an arrangement of atoms and molecules in free space, which
can be polarized by the application of an electric field. The Electric field separates the

27
Background Theory
positive and negative charges against the Coulombs force of attraction and hence produces an
array of microscopic dipoles. These charges are known as bound charges. The molecules can
be arranged in an ordered and predictable manner or may exhibit random positioning and
orientation, as would occur in an amorphous material or a liquid depending upon the nature of
the material and the applied field. The molecule may or may not exhibit permanent dipole
moments (existing before the field is applied), and if they do, they will usually have random

orientations throughout the material volume. The macroscopic polarization vector P rises
because of the displacement of the charges is defined as the dipole moment per unit volume
and is given mathematically as

1 N v
P = lim
pi
v 0 v
i =0
(3.1.1)
Where,
v = Very small volume ( m 3 ).
N = Total number of dipoles in the volume v .

pi = Dipole moment of i th molecule/atom (C.m) which is defined as pi = Qi d i , Where Qi

is the positive charge out of the two bound charges in i th molecule/atom and d i is a
vector quantity whose magnitude is the distance between the positive and the negative
charges within a molecule/atom and directed towards the positive charge from the
negative one.

Here an important point o note is that, if pi = 0 i P = 0 , but if pi 0 for some i

then it may be possible that P = 0 , because of the complete random orientation of the
polar molecules or atoms throughout the volume.
The electric field and the polarization are related as

28
Background Theory

P = 0 e E
(3.1.2)
Where the electric susceptibility, e is the very interesting part of the dielectric constant, and
can be related to this as
r = 1 + e
(3.1.3)
Therefore to understand the concept and nature of the dielectric constant r we have to
understand the concept and nature of the electric susceptibility e this finally helps us to

understand the behaviour of the polarization P .
3.1.2. Dipole in the time harmonic field

To understand the concept of the behaviour of the electric dipole in the time harmonic field
that is propagating as a wave through the material one has to go deep into the concept of

polarization and the phase difference between E and D field. The result of applying time

dependent E on dielectric material is oscillating dipole moments are setup, and these in turn
establish a polarization wave that propagates through the material. The effect is to produce

the polarization function P ( z , t ) , having the same functional form as the field E ( z , t ) which
produces this. The atoms/molecules dont move physically throughout the material, but their
oscillating dipole moments collectively exhibit wave motion. This is very important and deep
understanding of wave phenomenon in dielectric. We can form a basic qualitative
understanding, however, by considering the classical description of the process, which is that
the dipoles, once oscillating, behave as microscopic antennas, re-radiating fields that in turn
co-propagate with the applied field. There will be some phase difference between the applied
field and the radiated field at a given dipole locations which depends on the frequency of the
applied field. Generally this phase difference increases with the increase in the applied
frequency of applied field. Thus the net electric field is the vector sum of these two fields,
29
Background Theory
which interact with the next dipole. Radiation from this dipole adds to the previous field as
before and the process repeats from dipole to dipole. The net phase shift at each location
results in the slowing down the phase velocity of the resultant wave. Attenuation of the field
is accounted in the classical model by the partial phase cancellation between the incident and
the radiated fields.
3.2. Complex Permittivity [13]

3.2.1. The Classical Spring Model
In the classical model, the dielectric mediums are the collection of the identical and fix
electron oscillators, in which Coulombs force of attraction is modelled as the spring between
the electronic cloud and the nuclei. Following Figure3.2.2 shows the single oscillator located
at the position z in the material and oriented in the x-axis. A uniform plane wave, assumed
to be linearly polarized along x , propagates in the material in the z direction. The
electric field in the wave displaces the electron of the oscillator in the x -direction through a

distance represented by the vector d ; a dipole moment is thus established,

p ( z , t ) = e d ( z , t )
(3.2.1)

Fa ( z, t ) = e E ( z, t )
(3.2.2)
Where the applied force is given by
Here we have assumed that the charge on the electron is positive.

We need to remember that the electric field E ( z , t ) at a particular position and at particular
time that we have used in the above equation is the total electric field which is the vector sum
of the applied electric field and the radiated field from all the other oscillators. The relative

30
Background Theory
phase differences between oscillators is accurately determined by the spatial and temporal

behaviour of E ( z , t ) .

displacement force = eE

damping force = m d v

restoring force = k s d
Figure-3.2.2: - Atomic dipole model with Coulomb force between

positive and negative charges modelled by that of a spring having spring
constant k s . An applied electric field displaces the electron through

distance d , resulting in a dipole moment p = e d

The restoring force on the electron Fr is that produced by the spring which is assumed to obey
Hooks Law:

Fr ( z , t ) = k s d ( z , t )
(3.2.3)
Where, k s = Spring constant (not the propagation constant).

The negative sign shows that the restoring force is in opposite directions to that of the
displacement of the electron from the mean position which is the nucleus in this case. If the
field is turned off the electron is released and will oscillate (as shown in the Figure3.2.3
below) about the nucleus at the resonant frequency, given by the following expression
Fr = ma
k s d ( z , t ) = m0 d ( z , t )
2
0 =
(3.2.4)
ks
m
Where, m is the mass of the

electron
Figure-3.2.3: -Oscillation of the electron about the nucleus
As, the electron experience the damping from the neighbouring oscillators, this damping can
be modelled by a velocity dependent damping force given by

31
Background Theory

Fd ( z , t ) = m d v ( z, t )
(3.2.5)

Where v ( z, t ) is the velocity of the electron at the position z and at time t .
Dephasing is a very important process which is completely associated with the damping in the
electron of the oscillator in the system. Their relative phasing, once fixed by the applied
sinusoidal field, is destroyed through collisions and dies away exponentially until a state of
totally random phase exists between oscillators.
By applying the Newton second law of motion and write down the vector sum of all the
forces (damping, applied and restoring) equal to the product of the mass of the electron and its
acceleration,

ma = Fa + Fr + Fd

2dc
d c
m 2 + m d
+ k s d c = eEc
t
t
(3.2.6)

Where Ec is the complex form of the electric field at point ( z, t ) which includes applied
and radiated field as discussed already. Its general form is given as

Ec = E0e jkz e jt
(3.2.7)

As the system is being excited by complex Electric field Ec , one can anticipate a

displacement wave d c of the form

d c = d 0e jkz e jt

d c = d s e jt
(3.2.8)

d s = d 0e jkz
(3.2.9)
Where
Putting equations 3.1.12 in equation 2.1.9 one can get,

32
Background Theory
] [

m( j )( j ) d 0 e jkz e jt + m d ( j ) d 0 e jkz e jt + k s d 0 e jkz e jt = eE0e jkz e jt
(3.2.10)

k
2
Dividing by me jt , and putting d s = d 0e jkz , Es = E0 e jkz and 0 = s the simplified version
m
of this equation is

e
2
d s 2 + j d + 0 = Es
m
(3.2.11)

Making d s as subject, the resulting equation takes the form,

ds =
[(
( m)
e
2
0
+ j d
2

Es
(3.2.12)

The dipole associated with the displacement d s is

p s = e d s
(3.2.13)
The polarization vector of the medium can be found by assuming that all the dipoles are
identical

Ps = N ps = eN d s

Ps =
[(
( m)
2
Ne
2
0
2 + j d
(3.2.14)

Es
(3.2.15)
Comparing this equation with the 3.2.2 we get the susceptibility at resonance as
res
Ne 2
=
0 m 0 2 2 + j d
[(
(3.2.16)
and res
Which is a complex number having real and imaginary parts which are res
respectively. Thus res can be written as

j res
res = res
(3.2.17)
33
Background Theory
Where
Ne 2 0 2
2
[( ) + ]
Ne ( )
=
m[( ) + ]
=
res
0 m 0 2
2 2
res
d
2 2
(3.2.18)
Now, the real and imaginary parts of the permittivity can be found through the real and
imaginary parts of res .
j res
) = 0 (1 + res
) j 0 res
= j = 0 (1 + res ) = 0 (1 + res
(3.2.19)
Thus it is clear that

)
= 0 (1 + res
= 0 res
(3.2.20)
The plot of the real and the imaginary parts of complex susceptibility is shown in Figure
3.2.3.
Figure 3.2.3: - Plot of the real and imaginary parts of the

resonant susceptibility res . The full width at half-maximum
is equal to the damping coof the imaginary part res
efficient d .

34
Background Theory
about
The important points to note in the plot are the symmetric behaviour of the res
= 0 whose full- width at its half-maximum amplitude is d . Near the resonant

become maximum, so the wave attenuation is at the peak. There is a
frequency where res
with frequency away from resonance, which leads to the
still significant variation of res
frequency.
3.2.2. Limitation of the Classical Model

Here it is important to mention that this model which is based on the Classical Physics
provide the very accurate prediction of the dielectric constant behaviour with respect to
frequency (particularly off-resonance) and can be use to a certain extent to model absorption
properties. The model is incomplete, specifically, it assumes that the oscillating electron can
assume any one of continuum, of energy state, when infect the energy state in the in any
atomic system are quantized. As a result, the important effects arising from transitions
between discrete energy levels, such as spontaneous and stimulated absorption and emission,
are not included in this classical spring system. Quantum mechanical model must be used to
fully describe the medium polarization properties, but the results of such studies often reduce
to those of the spring model when field amplitude is very small.
3.4. Waveguides
A waveguide is a structure through which electromagnetic waves can be transmitted from
point to point and within which the fields are confined to certain extend [13] . There are
different types of waveguides. Waveguides can be constructed to carry waves over a wide
portion of the electromagnetic spectrum, but are especially useful in the microwave and
optical frequency ranges.

35
Background Theory
In 1897, Lord Rayleigh (John Willim Stutt) mathematically proved that wave propagation is
possible in waveguides both for circular and rectangular. In this project rectangular wave
guides are given more importance because they are easily available in the labs also the
mathematical analysis for rectangular shaped waveguides are simple than that of the circular
waveguides. In addition to this the experimental results with rectangular wave guide are
available. The method developed here is by using rectangular waveguide but this can easily be
generalized for other shapes of waveguides.
Early microwave systems relied on waveguide and coaxial lines for transmission line media.
Waveguide has the advantage of high power-handling capability and low loss but is bulky and
expensive [14] .
Wave guides, often consisting of simple conductors, support transverse electric (TE) and/or
transverse magnetic (TM) waves, characterized by the presence of longitudinal magnetic or
electric field components respectively.
3.4.1. General Solution for TEM, TE and TM Waves

Pozar in his book [14] briefly derived the expressions by using the point form of Maxwells
equations for the transverse and longitudinal components of electric and magnetic fields as a
general case, means expressions which are independent of the geometry of the waveguide it
may be parallel plate, rectangular, cylindrical or may be of any shape.
Lets review these mathematical derivations to understand the working and response of the
rectangular waveguide which is of great importance for this dissertation project.
Assume time harmonic field and wave propagation along +z-axis. The corresponding electric
and magnetic fields takes the form

E ( x, y, z ) = [e ( x, y ) + zez ( x, y )]e j z

H ( x, y, z ) = h (x, y ) + zhz ( x, y ) e j z

(3.4.1)
(3.4.2)
36
Background Theory
Where

e ( x, y ) = Transverse vector component of electric field.

h ( x, y ) = Transverse vector component of magnetic field.
ez ( x, y ) = Longitudinal component of electric field.

hz ( x, y ) = Longitudinal component of electric field.
= Propagation constant, because attanuaton is zero( = 0 ).

z = unit vector in z-direction.
j = 1
For the free space case that is by assuming that wave is travelling in free space, now one can
use the free space Maxwells equations in point form which are

E = j H
(3.4.3)

H = j E
(3.4.4)
Where
= Angular frequency of the electromagnetic wave.

= Permittivity of the material through which wave is propagating.
= Permeability of the material through which wave is propagating.
By inserting equations (3.4.1) and (3.4.2) in the above equations and using the definition of
vector product to convert these vector equations in to simple algebraic equations on can get
the following six equations as mentioned in reference [14] .
E z
+ j E y = j H x
y
j E x
E y
x
E z
= j H y
x
E y
y
= j H z

(3.4.5)
(3.4.6)
(3.4.7)
37
Background Theory
H z
+ j H y = j E x
y
j H x
H y
x
H z
= j E y
x
H x
= j E z
y
(3.4.8)
(3.4.9)
(3.4.10)
These six equations can be solved for the four transverse field components in terms of the
longitudinal components of electric and magnetic field.
j
E z
H z

2
kc
y
x
Hx =
(3.4.11)
Hy =
j
E z
H z

+
2
kc
x
y
(3.4.12)
Ex =
j E z
H z
+
2
kc x
y
(3.4.13)
j
E
H z
z +
2
kc
y
x
(3.4.14)
Ez =
Where
kc2 = k 2 + 2
(3.4.15)
kc Is defined as the cut-off wave number.

Equations (3.4.11) to (3.4.15) are derived from the six fundamental equations (3.4.5) to
(3.4.10) which are relatively more general. TEM waves cannot be derived from equations
(3.4.11) to (3.4.15) but they can be explained completely using equations (3.4.5) to (3.4.10).
3.5. Rectangular wave guide

Rectangular wave guide is one of the earliest types of transmission lines used to transport
microwave and optical signals which lies in the frequency range 1 to 40 GHz. Above 40GHz
dielectric waveguides are used because the physical size of rectangular waveguide become

38
Background Theory
very small. The Figure-3.5.1 shows some of the standard rectangular wave guides
components that are available
Figure 3.5.1: - Standard rectangular wave guides

The hollow rectangular waveguide can support TM and TE modes, but not TEM mode of
electromagnetic waves because TEM mode need more then one conductor while rectangular
waveguide consists of only single conductor.
Rectangular waveguide has a cut-off frequency below which propagation is not possible for
TM and TE mode.
3.5.1. TE Mode
TE (Transverse Electric) wave are the waves in which the component of electric field in the
direction of propagation of the wave is zero. It may have the non-zero component of magnetic
field in the direction of propagation of the wave that is the reason it is also known as the Hwaves. In this analysis as the direction of propagation of wave is +z-axis thus mathematically
TE mode can be defined as E z = 0 and H z 0 . As far as the boundary conditions are concern
then it is very obvious that tangential components of electric field is zero at the boundary of
the rectangular wave guide as it is made up of very good conductor. Mathematically with
reference to Figure-3.5.2
ex ( x, y ) = 0 at y = 0, b

(3.5.1)
39
Background Theory
e y ( x, y ) = 0 at x = 0, a
(3.5.2)
3.5.2. TM Mode
TM (Transverse Magnetic) wave are the waves in which the component of magnetic field in
the direction of propagation of the wave is zero. It may have the non-zero component of
electric field in the direction of propagation of the wave that is the reason it is also known as
the E-waves. In this analysis as the direction of propagation of wave is +z-axis thus
mathematically TM mode can be defined as E z 0 and H z = 0 . As far as the boundary
conditions are concern they are same as that in TE-Mode. That is with reference to Figure3.5.2.
ex ( x, y ) = 0 at y = 0, b
(3.5.1)
e y ( x, y ) = 0 at x = 0, a
(3.5.2)
The following Table-3.5.1 [14] will show the summary of the results of the study of rectangular
wave guide. In this table time-harmonic field with a e j t dependence and wave propagation
along the z-axis and the electric and magnetic fields of the form of Equation (3.4.1) and
(3.4.2) are assumed.
Considering
k = wave number.
kc = Cut off wave number.
= phase constant.
a = length of the rectangular wave guide.
b = width of the rectangular wave guide.
c = cut off wave length.
Figure-3.5.2 Rectangular Waveguide [14]
g = guide wave length.

v p = phase velocity.
40
Background Theory
d = attenuation constant.
tan = loss tangent.
QUANTIT
Y
k
TE mn MODE
TM mn MODE
kc
(m a )2 + (n b )2
(m a )2 + (n b )2
k 2 kc
k 2 kc
c
g
vp
d
Z
Ez
Hz
Ex
Ey
2
kc
2
2
kc
2
2
k tan
2
k
2
k tan
2
k
m x n y j z
Bmn sin
sin
e
a b
m x
n y j z
Amn cos
cos
e
a
b
j n
m x n y j z
Amn cos
sin
e
2
kc b
a b
j m
m x n y j z
Bmn cos
sin
e
2
kc a
a b
j m
m x
n y j z
j n
m x
n y j z
Amn sin
cos
e
2
2 Bmn sin
cos
e
kc a
a
b
kc b
a
b
Hx
j m
m x
n y j z
Amn sin
cos
e
2
kc a
a
b
Hy
j n
m x n y j z
Amn cos
sin
e
2
kc b
a b
j n
m x
n y j z
Bmn sin
cos
e
2
kc b
a
b
jm
m x n y j z
Bmn cos
sin
e
2
kc a
a b
Table 3.5.1: - Characteristics of the rectangular wave guide [14] .

41
Background Theory
3.6. Scattering by Conducting Wedge [10]

Scattering of electromagnetic waves from some regular shaped objects are studied in which
scattering from the conducting wedge is the most important one because the wedge is a
canonical problem that can be used to represent locally (near the edge) the scattering of more
complex structures, asymptotic forms of its solution have been utilized to solve numerous
practical problems. The asymptotic forms of its solution are obtained by taking the infinite
series modal solution and first transforming it into an integral by the so-called Watson
transformation [ 20, 21] . The integral is then evaluated by the method of steepest descent (saddle
point method) [ 22 ] . The resulting terms of the integral evaluation can be recognized to
represent the geometrical optics fields, both incident and reflected geometrical optics fields,
and the diffracted fields, both incident and reflected diffracted fields. These forms of the
solution have received considerable attention in the geometrical theory of diffraction (GTD)
which has become a generic name in the area of antennas and scattering.
Figure 3.6.1: - Electric line source near a two dimensional conducting wedge,
reference at bisector [10] .

42
Background Theory
Balanis, used the incident field on the conducting wedge from the infinite electric line source
in which the current I e is following and is of the form,

(2 )
jm ( )
2
J m ( )H m ( ) e
I
e m =
E zi =

4
J m ( )H m(2 ) ( ) e jm ( )
m
=

(3.6.1)
The z-component of the total electric field because of the incident (Electric field of infinite
Electric Line Source as mentioned above, in equation (3.6.1)) and scattered electric field from
the wedge in circular cylindrical co-ordinate system with total internal wedge angle WA= 2
is calculated in reference [10] by considering the reciprocity and is given by
av J v ( )H v(2 ) ( )sin [v( )] sin[v( )],
E zt = E zi + E zs = v
(2 )
av J v ( )H v ( )sin [v( )] sin[v( )],
v
(3.6.2)
The corresponding magnetic field components can be obtained by using Maxwells Equations
as
H t =
1 E zt
j
1
1 E zt
H =
j
t
(3.6.3)
(3.6.4)
3.7. Maxwell- Garnett Mixing Theory

The study of Maxwell-Garnett theory starts from the reference [1] which is basically the
fundamental research paper in the field of calculation of the complex permittivity of the
mixture of the medium with the known permittivities of the elements of the mixture.
According to Maxwell-Garnett theory the permittivity only depends on the distribution of one
element which one can call impurities on the other element and on the shape of the impurity
present. The title of the paper was Colour in the metal glasses and in metallic films and it
43
Background Theory
was published in 1904. It basically treated the impurities as spherical shaped object with
different complex permittivity was present in the material.
The two other papers which were studies are [ 2,3] , they basically based on the application of
the Maxwell-Garnett theory in special cases. In the reference
[2]
Maxwell Garnett theory was
proved mathematically and then checked by the three experiments only by taking the
homogenous medium in which the shape of the impurity was considered spherical.
In the reference [ 3] Maxwell Garnett Theory was applied for the mixtures of anisotropic
inclusions with conducting polymers. The effective dielectric function eff for a medium of
anisotropic inclusions embedded in an isotropic host is calculated using the Maxwell Garnett
approximation. For uniaxial inclusions, eff depends on how well the inclusions are aligned.
Then the approximation to study eff for a model of quasi-one-dimensional organic polymers
was performed. The polymer is assumed to be made up of small single crystals embedded in
an isotropic host of randomly oriented polymer chains. The host dielectric function is
calculated using the effective-medium approximation (EMA) The resulting frequencydependent eff ( ) closely resembles experiment. The formula used to approximate the total or
effective permittivity is
eeff = e2 + 2 f e2
e1 e2
e1 + e2 f (e1 e2 )
(3.7.1)
Where e2 is the permittivity of the free space, e1 is the permittivity of the profile layer and f
is the material fill factor.
3.7. S-Parameters
Circuits operating at low frequencies, for which the circuit dimensions are small relative to
the wavelength, can be treated as an interconnection of lumped passive or active components

44
Background Theory
with unique voltages and currents defined at any point in the circuit. In this situation the
circuit dimensions are small enough so that there is negligible phase change from one point in
the circuit to another. In addition, the fields can be considered as TEM fields supported by
two or more conductors. This leads to a quasi-static type of solution to Maxwell's equations,
and to the well-known Kirchhoff voltage and current laws and impedance concepts of circuit
theory [8] . Simply there are very familiar helpful and easy laws like Kirchhoff voltage and
current laws governs the low frequency circuits and the theory used for their analysis is
known as circuit theory. But this theory or these laws are not applicable for high frequency
circuits like at microwave frequency, or one can say that microwave circuits are not in the
domain of circuit theory because of their less generality.
To solve high frequency circuits (with frequency greater than 1GHz) scientist and engineers
usually use Maxwells Equations which are the complete classical description and solution of
any electromagnetic phenomenon at any frequency. But the problem with this method is the
difficulty level and the mathematic involved in it. The analysis of any electromagnetic
phenomenon using Maxwells Equations is known as field analysis. One more problem with
field analysis is that it gives much more information about the particular problem under
consideration then one really wants or need. That is because the solution to Maxwell equation
for a given problem is complete; it gives the electric and magnetic field at all points in space
and at all times.
Hence one can modify circuit analysis to network analysis which make our analysis simple
and gives the correct results in terms of currents and voltages without using the complex
mathematics of Maxwell Equations (which results in electric and magnetic field), by defining
parameters known as Scattering Parameters or S-parameters. Another reason for using
network analysis is that it is very easy to modify the original problem, or combine several

45
Background Theory
elements together and find the response without the field analysis. Field analysis using
Maxwells Equations for such problems be hopelessly difficult.
S-parameters are basically the relation between incident voltage wave and reflected voltage
wave from the ports. For some components and circuits, the scattering parameters can be
calculated using network analysis technique. Otherwise the scattering parameters can be
measured directly with the help of Vector Network Analyzer (VNA).
Pozar [14] has defined the S-parameters by considering the N-Port network shown in Figure3.7.1. where Vn+ is the amplitude of the voltage wave incident on port n and Vn is the
amplitude of the voltage wave reflected from port n. The scattering matrix or [S ] matrix is
defined in relative to these incident and reflected voltage wave as
V1- S11 S12 S1n V1+

-
+
V2 = S21 S22 S1n V2

-
+
Vn Sn1 Sn2 Snn Vn
[V ] = [S][V ]
+
A specific element of the [S] -matrix can be determined as
Sij =
V1V1+
Vk+ = 0 k j
Figure-3.7.1 An arbitrary N-port microwave network [14]

46
Extraction of Complex Permittivity from S-Parameters
CHAPTER No 4
4. EXTRACTION OF COMPLEX PERMITTIVITY FROM
S-PARAMETERS
This chapter includes complete mathematical derivation to calculate the complex permittivity
from the S-parameters of the multilayer problem. Firstly S-parameters for all layers are
converted into ABCD matrix then by knowing this and the ABCD matrices of the known
layers, ABCD matrix of the profiled layer is calculated using a mathematical technique called
Deembedding, and finally mathematical formulation is given to derive the complex
permittivity of that layer from this known characteristic matrix.
4.1. Two Independent Ways of Obtaining the S-Parameters

In this project S-parameters of the samples are taken from following two different
independent sources
1. HFSS Simulations, which will be discussed in Chapter No 5 of this report.
2. Experimental Measurements using Vector Network Analyzer (VNA), which will
be discussed in Chapter No 6 of this report.
After measuring the S-parameters from the experimental setup one has to convert it into the
normal rectangular form, because Vector Network Analyser (VNA) gives output magnitude
response in decibel (dB) and phase response in degrees. The simple formula used for that is
S Parameters (in rectangular ) = 10
( dB )
20
(cos ( ) +
j sin ( ))
(4.1.1)
Where dB is the magnitude response and is the angle in degrees taken from VNA.

47
4.2. Conversion of Scattering Matrix to ABCD Matrix

At low frequency the behaviour of two-port network can easily be characterise by the,
z, y, h or ABCD parameters because at low frequency it is relatively easy to do short and open
circuit experimentally. But at higher frequencies like at microwave frequencies these
parameters cannot be measured accurately because the required short circuit and open circuit
tests are difficult to achieve over a broadband range of microwave frequencies.
A set of parameters which are then useful at higher frequencies are Scattering parameters
known as S-parameters, which deals with the incident and reflected voltage waves at a
particular node or port rather then input port impedance, admittance, total current or voltage.
According to Pozar [14]
The scattering matrix relates the voltage waves incident on the ports to those reflected from
the ports
These are mathematically defined in article 3.7 at page 40 of this report.
If the network is the cascaded version of two or more then two two-port networks then
another set of parameters known as ABCD-parameters are very useful. For two-port network
as shown in figure 4.2.1 ABCD parameters can be written as 2 2 matrix of the form
a b
`[A] =
c d
(4.2.1)
Figure-4.2.1. A two port network

48
The well-defined relationship between ABCD matrix and Scattering matrix derived in
Pozar [14 ] , given by
a=
b=
(1 + S11 )(1 S 22 ) + S12 S 21

2 S 21
(1 + S11 )(1 + S 22 ) S12 S 21 Z

2 S 21
(1 S11 )(1 S 22 ) S12 S 21

c=
2 S 21
d=
(1 S11 )(1 + S 22 ) + S12 S 21
1
Z0
(4.2.2)
2 S 21
For the ABCD matrix mentioned above.
4.3. Example of 4-Layer Problem (Calculation of S-Parameters of 4-Layers)

Consider a four layer problem as shown in the two dimensional figure 4.3.1 below,
Figure-4.3.1. 2 and 4-Layer Problem with the plane of calibration

specified in each case
By using a Vector Network Analyser (VNA) and placing the dielectric material (layer-2) and
profiled layer (layer-3) in a rectangular waveguide cell (WG-14), S-parameters of both the
layers are measured. But in case of simulation the situation is different.

49
In case of simulation in HFSS the length of layer-1 and layer-4 (see figure 4.3.1) which are
basically filled with air plays an important role and one cannot neglect this because these
layers makes the problem as 4-layer problem. So the S-parameters taken from the simulation
data are the S-parameters of the 4-layers.
After taking the S-parameters from simulation data these are converted in transmission
parameters (ABCD-parameters) for the four layers using the relations in equations (4.2.2)
(with Z 0 = 1 ) and the matrix obtained is named as [A 5 ] .
4.4. Deembedding of ABCD Matrix of Profiled Layer

Characteristic matrices for the layers 1, 2 and 4 are also calculated which in this report are
denoted by [A1 ], [A 2 ]and [A 4 ] respectively. The general form of these matrices is
cosh(mlm )
sinh(mlm ) z m
[A m ] =
sinh(mlm ) z m
cosh(mlm )
(4.4.1)
Where
lm = Physical length of layer-m
m = j
*
m
= Complex propagation constant in the waveguide with cut-off wavelength
c filled with the material of complex permittivity m*

= free space wave length
c = Cut off wave length

m* = complex permittivity of layer-m
zm =
, in which g =guide wave length.
g m*
Then by the properties of characteristic matrices

50
The characteristic matrix of all four layers is equal to the product of the characteristic
matrices of the individual layers in the order of their physical existence.
[A1 ][A 2 ][A 3 ][A 4 ] = [A 5 ]
(4.4.2)
Where [A 3 ] is the characteristic matrix of the layer-3 (profiled layer) whose complex
permittivity is to be determined.
[A 5 ] is determined experimentally or from the simulation
results and the other three matrices [A1 ], [A 2 ] and [A 4 ] are calculated from the physical
length, the known complex permittivities of the respective materials, free space wave length
and cut-off wave length for a particular wave guide which in this case is WG-14.
4.5. Calculation of Complex Permittivity of Profiled Layer from its ABCD

Matrix
The extraction of [A 3 ] from equation-1 is known as Deembedding of [A 3 ] . It consists of 3steps.
Step-1: Multiplying with the multiplicative inverse of [A 4 ] that is [A 4 ]
on the right side of the
equation-1 to get [A 6 ]
[A 6 ] = [A1 ][A 2 ][A 3 ][A 4 ][A 4 ]1 = [A 5 ][A 4 ]1

1
= [A1 ][A 2 ][A 3 ] = [A 5 ][A 4 ]
a6
c
6
b6 a5
=
d 6 c5
b5 a4
d 5 c4
(4.5.1)
b4
d 4
{Note: - Element a4 and d 4 are equal and are thus not interchange}
Step-2: Multiplying equation-2 by the multiplicative inverse of matrix [A1 ] to the left side to get [A 7 ]

51
[A 7 ] = [A1 ]1 [A1 ] [A 2 ] [A 3 ] = [A1 ]1[A 5 ] [A 4 ]1

1
= [A 2 ][A 3 ] = [A1 ] [A 6 ]
a7
c
7
b7 a1 b1 a6
=
d 7 c1 d1 c6
(4.5.2)
b6
d 6
Step-3: Multiplying with the multiplicative inverse of matrix [A 2 ] that is [A 2 ]
to the left side of
equation-3 to get [A 8 ]
[A8 ] = [A 2 ]1 [A 2 ] [A 3 ] = [A 2 ]1 [A1 ]1 [A 5 ] [A 4 ]1
1
= [A 3 ] = [A 2 ] [A 7 ]
a8
c
8
b8 a2
=
d 8 c2
b2 a7
d 2 c7
(4.5.3)
b7
d 7
Finally [A 8 ] is obtained which is the characteristic matrix of the layer-3 (profiled layer) from
which the complex permittivity can be calculated using the following steps
3 = propagation constant for layer 3 =
(sinh(l )Z 0 )(sinh(l )
1
log 10 a3 + b3 c3
l3
1
log 10 cosh(l ) +
l3
1
log 10 a8 + b8 c8
l3
Z0 )
Where l3 = physical length of the profiled layer, and finally the following equation helps us to
calculate the complex permittivity of the profiled layer.
2

= 3 +
j 0 c
*
3

(4.5.4)
52
4.6. Software Used for the Calculation of Complex Permittivity

The complete algorithm for the extraction of the complex permittivity from the ABCD matrix
of the 4-layers in the case of the simulation results or 2-layers in the case of the experimental
results is given above. The calculations are very lengthy so in order to do all these calculation
manually four programs are written C++. These programs are included as the appendix-D to
this dissertation report. C++ language is selected because it can handle the complex numbers
easily and it easy to program. Two of them are for 4-layers and rest of 2 are for the 2-layers
one. Out of two programs for 4 layers one takes complex permittivity and lengths of each
layers as an input and gives the result in the form of S-parameters and the second one is the
reverse of this, it takes S-parameters and the physical lengths as an input and results in
complex permittivity of the layer whose complex permittivity is to be determined. Same is the
case of the two programs for 2-layers.

53
HFSS Simulation and its Results
CHAPTER No 5
5. HFSS- SIMULATION AND ITS RESULTS
This chapter deals with the simulations perform to check the experimental data. The software
used for simulation in this project is three dimensional electromagnetic simulation tool named
HFSS which is the abbreviation of High Frequency Structure Simulator. Method of
developing a model and ways of getting results are also discussed. This software uses
meshing technique for FEM method and the effect of meshing on simulation results is also
discussed. Finally the results in the form of complex permittivity of the four layer problem for
different shapes and sizes of discontinuities in the Perspex layer are given. For the results of
simulation in the form of S-parameters see Appendix-E.
5.1. Introduction to the Software

HFSS is a commercial solver for electromagnetic structures from Ansoft Corporation. The
acronym originally stood for high frequency structural simulator. It is one of the most popular
and powerful applications used for antenna design and the design of complex RF electronic
circuit elements including filters, transmission lines, and packaging. It is also very good to
handle scattering problems.
5.2. Technique Used

The simulation technique used in HFSS software to calculate the full 3-D electromagnetic
fields inside a structure is based on the finite element method (FEM). Although its
implementation is very transparent, a general understanding of FEM is very important
5.2.1. The Finite Element Method.

In order to generate an electromagnetic field solution, HFSS employs the finite element
method. In general, the finite element method divides the full problem space into thousands of

54
smaller regions and represents the field in each sub-region (called element) with a local
function.
In HFSS, the geometric model is automatically divided into a large number of tetrahedral,
where a single tetrahedron is a four-sided pyramid. The collection of tetrahedral is refined as
the finite mesh.
The value of a vector field like H-field or E-field at points inside each tetrahedron is
interpolated from the vertices of the tetrahedron.
5.2.2. Size of Mesh vs. Accuracy

There is a trade-off among the size of the mesh, the desired level of accuracy, and the amount
of available computer resources.
The accuracy of the solution depends on the size of each of the individual elements
(tetrahedron). Generally one can say that the solution considering thousands of elements are
more accurate then the solution based on the mesh using relatively few numbers of elements.
To generate the precise description of a field quantity, each element must occupy a region that
is small enough for the field to be adequately interpolated from the base-function.
5.3. Meshing and its effect on simulation results

To produce the optimal mesh, HFSS uses an iterative process, called an adaptive analysis, in
which the mesh is automatically refined in critical or in sharp end regions. First, it generates a
solution based on a coarse initial mesh. Then, it refines the mesh in area of high density and
generates a new solution. When selected parameters converge to within a desired limits,
HFSS breaks out of the loop.
5.3.1. General Observations during the Simulation

1. In this project simulations are performed for the same geometrical object by selecting
different mesh sizes and it is observed that the effect of decreasing the mesh size is
only on the time taken by the simulation that is it increases from 4hr generally to 3
55
days etc. but it is found that it has no important effect on the results of simulations.
This observation is made number of times during the project time and at last it is
concluded that the meshing technique used in the software take care of the error in the
final result and reduces the mesh size automatically where it is needed like on some
sharp corners and edges where there is a chance of having high rate of change of fields
with respect to space.
2. It is also observed that the time taken for simulation in the case of slots is small
compared to the time taken in the cases of angled grooves.
3. Maximum time taken for simulation is in the case of 60 Degree and 120 Degree
grooves.
5.4. Developing the Model in HFSS and Results

Rectangular slots are made by defining the 3-D box objects at the specific location. Assign the
material which is Perspex with the following electrical properties
* = 2.62 j 0.02
tan ( ) =
0.02
= 0.00763358
2.62
Then the port are defined and the boundary conditions which is perfect-E because of the very
good electrical conductivity of the boundary of the rectangular waveguide which is made of
copper. 90 degree, 120 degrees and 60 degrees grooves were obtained from the regular
polygons like hexagon or octagon etc.
Figure-5.4.1. 4-Layers of the problem with specified dimension used in

simulating each case
56
The two dimensional picture of a four layer problem which are made in HFSS for simulation
with all the lengths mentioned is shown in the Figure-5.4.1. In this figure the layer-3 is the
profiled layer and layer 2 is the layer of Perspex having thickness 4.8mm.
Three dimensional figure from HFSS model is shown below I figure-5.4.2.
Figure-5.4.3. Three Dimensional model developed in HFSS for simulation.

The dimensions and the position of each object in the model was really very important, hence
lot of attention was paid on that.
5.4.1. Slots
The simulation for the case of rectangular slots for different cases gave the results in the form
of the S-parameters. These S-parameters are used to calculate the complex permittivity for the
layer-3 (see Figure-5.4.1) whose width are 1mm in general but there are some special cases in
which it is
3 mm, by using the C++ program given in appendix-D. Following are the
summarized results taken from that program in the form of complex permittivity, Sparameters for each case is given in appendix-E. The analysis and deductions from this data is
the subject of next chapter.

57
Rectangular Slots with pitch of 1.4mm, width of 1mm, depth of 1mm

and with air fill factor (AFF)=0.714285
Frequency
6GHz
1.408-j0.0284
7 GHz
1.344-j0.0283
8 GHz
1.285-j0.0226
Table-5.4.1. Complex permittivity of slots with 1.4mm pitch
Rectangular Slots with pitch of 1.7mm, width of 1mm,depth of 1mm

Frequency
6GHz
1.613-j0.024
7 GHz
1.55-j0.0365
8 GHz
1.487-j0.0189
Table-5.4.2. Complex permittivity of slots with 1.7mm pitch.

Frequency
6GHz
1.784-j0.02219
7 GHz
1.757-j0.0255
8 GHz
1.0534-j0.0372

58
Rectangular Slots with pitch of 2.0mm, width of 1mm, depth of

1 0.577 mm and with air fill factor (AFF)=0.2887
3
Frequency
6GHz
1.681-j0.0357
7 GHz
1.557-j0.0691
8 GHz
1.42-j0.0590
Table-5.4.4. Complex permittivity of slots with 2.0mm pitch, with depth of 0.577mm.

Frequency
6GHz
1.881-j0.038
7 GHz
1.818-j0.0306
8 GHz
1.726-j0.0279

Frequency
6GHz
1.978-j0.0581
7 GHz
1.899-j0.0428
8 GHz
1.828-j0.0137

59

Frequency
6GHz
2.121-j0.0334
7 GHz
2.041-j0.0463
8 GHz
1.961-j0.0175

Frequency
6GHz
2.177-j0.028
7 GHz
2.109-j0.0403
8 GHz
2.021-j0.0329

Frequency
6GHz
2.187-j0.053
7 GHz
2.113-j0.0433
8 GHz
2.012-j0.0403

60
5.4.2. 60 Degrees Grooves

The simulation for the case of 60 degree grooves for different fill-factors gave the results in
the form of the S-parameters. These S-parameters are used to calculate the complex
permittivity for the layer-3 (see Figure-5.4.1) by using the C++ program given in appendix-D.
Following are the summarized results taken from that program in the form of complex
permittivity, S-parameters for each case is given in appendix-E. The analysis and deductions
from this data is the subject of next chapter.
Grooves of 60 degrees with pitch of 1.2mm, width of 1.155mm,

depth of 1mm And air fill factor (AFF)=0.4811
Frequency
6GHz
1.813-j0.0534
7 GHz
1.788-j0.0598
8 GHz
1.747-j0.0723
Table-5.4.10. Complex permittivity of 60 degree grooves having1.2mm pitch.

Frequency
6GHz
1.823-j0.007
7 GHz
1.801-j0.0079
8 GHz
1.776-j0.0171

61

Frequency
6GHz
1.933-j0.0485
7 GHz
1.906-j0.0656
8 GHz
1.876-j0.0611

Frequency
6GHz
2.048-j0.0431
7 GHz
2.022-j0.0516
8 GHz
1.993-j0.0656

Frequency
6GHz
2.129-j0.0451
7 GHz
2.100-j0.0562
8 GHz
2.073-j0.0562
Table-5.4.14 Complex permittivity of 60 degree grooves having 2.0mm pitch.

62

Frequency
6GHz
2.224-j0.0399
7 GHz
2.12-j0.0443
8 GHz
2.166-j0.0511
Table-5.4.15 Complex permittivity of 60 degree grooves having 2.5mm pitch

Frequency
6GHz
2.286-j0.0395
7 GHz
2.263-j0.0408
8 GHz
2.227-j0.0469


63

Frequency
6GHz
1.711-j0.0679
7 GHz
1.636-j0.0839
8 GHz
1.559-j0.0627

Frequency
6GHz
1.817-j0.0695
7 GHz
1.732-j0.0851
8 GHz
1.633-j0.0617

Frequency
6GHz
1.882-j0.0599
7 GHz
1.816-j0.0855
8 GHz
1.702-j0.0732

64

Frequency
6GHz
1.985-j0.0561
7 GHz
1.918-j0.0647
8 GHz
1.811-j0.103

Frequency
6GHz
2.109-j0.0548
7 GHz
2.011-j0.097
8 GHz
1.942-j0.0349

Frequency
6GHz
2.202-j0.0577
7 GHz
2.131-j0.0643
8 GHz
2.05-j0.0277

65

Frequency
6GHz
2.257-j0.0685
7 GHz
2.194-j0.0325
8 GHz
2.112-j0.0407

Grooves of 120 degrees with pitch of 4.0mm, width of 2 3 3.4641mm ,

Frequency
6GHz
1.828-j0.0770
7 GHz
1.747-j0.0935
8 GHz
1.673-j0.0820
Table-5.4.24 Complex permittivity of 120 degree grooves having4.0mm pitch

66

Frequency
6GHz
1.895-j0.066
7 GHz
1.808-j0.0916
8 GHz
1.756-j0.0754

Frequency
6GHz
1.972-j0.0819
7 GHz
1.884-j0.0819
8 GHz
1.829-j0.0778

Frequency
6GHz
2.067-j0.063
7 GHz
2.011-j0.0737
8 GHz
1.924-j0.0589

67

Frequency
6GHz
2.113-j0.0654
7 GHz
2.039-j0.0616
8 GHz
1.957-j0.0458

Frequency
6GHz
2.191-j0.0834
7 GHz
2.092-j0.0671
8 GHz
2.023-j0.0479

68
Experimental Setup
CHAPTER No 6
6. EXPERIMENTAL SETUP
This chapter include the experimental setup in which some of the working and theory of
calibration of Vector Network Analyzer (VNA) is discussed. The material to be measured in
this project is Perspex, its detail and electrical properties and the difficulty faced in making
the samples of required dimensions are discussed. At the end, experimental results which are
complex permittivities in the form of tables for different shapes of discontinuity are given.
These are calculated from S-parameters which are given in appendix-F. In-fact the VNA used
in this project is interfaced with a desktop computer which has the VEE program developed
by Keith Williams to plot the graph of real and imaginary part of complex permittivity by
using the S-parameters taken from the VNA; hence these plots are given in appendix-F.
6.1. Vector Network Analyzer (VNA)

A network analyzer is an instrument used to analyze the properties of electrical networks,
especially those properties associated with the reflection and transmission of electrical signals
known as scattering parameters (S-parameters). But as in this case the operating frequency is
between 6 to 8 GHz thus relatively cheaper VNA can work. The VNA used in this project is
shown in Figure-6.1.1.
The VNA that will be used in this project is relatively old and the maximum frequency it can
handle is about 40 GHz. Dr. Arthur. D. Haigh has written the operating instructions for VNA
which was followed for the calibration of this VNA and for reference it is included as an
appendix-A at the end of this dissertation report.

69
Experimental Setup
Figure-6.1.1. VNA used in this project

The two main categories of Network Analyzers are
Scalar Network Analyzer (SNA) - Measures amplitude properties only.
Vector Network Analyzer (VNA) - Measures both amplitude and phase properties.
Some of the working and the construction of the VNA are also studied like calibration,
finding the S-parameters from VNA, importance of the time given to VNA after turning it ON
to heat up and importance of the reflections free feed lines.
The left port shown in the Figure named as port-1 and the right one is named as port-2. There
are SMA connectors are connected at the end of the co-axial cables to connect the VNA to the
rectangular waveguide. The general layout of the setup is shown in the Figure-6.1.2, and the
picture of actual setup is shown in Figure-6.1.4. In this figure the sample is shown in gray
color placed between the two planes of calibrations. The cell which holds the sample inside
the waveguide is of 5.8mm thick and is shown in Figure-6.1.3. Inside of the cell there is the
thick wall of copper which is good conductor and the outside of is made up of brass it is very
clear because the difference in color shown in the Figure-6.1.3. Brass material is used for two

70
Experimental Setup
reasons one is because of the mechanical strength and the second is that because it is cheep
then Brass.
Figure-6.1.2 VNA connected with the waveguide with sample for the measurement of Sparameters
Figure-6.1.3 5.8mm thick Cell which hold the sample inside the waveguide
Actual practical setup is shown in Figure-6.1.4.

71
Experimental Setup
Figure-6.1.4 Actual practical setup for the measurement of S-parameters
6.1.1. Calibration of VNA

Calibration is used to correct the errors introduced by the cables and the connectors.
TRL
(trough, reflect, line) was used in this project to calibrate VNA. In this method, two
offsets
g 3 g
8
and a flush short are used in different combinations. The resultant calibration
error is not more then 0.05dB in magnitude and 0.5 degrees in phase. The detail of steps
involved in the calibration of VNA is given in Appendix-A of this dissertation report.
6.2. Material Used

In this project Perspex is used for making the samples. Perspex is a trade-name of Lucite
International and is polymethyl methacrylate (PMMA) acrylic sheet which is manufactured
from methyl methacrylate monomer (MMA). It is used because it is very simple for making
the samples of required dimensions of grooves and slots. It has the complex permittivity of
* = 2.62 j 0.02 which is measured by the same method using VNA and deembedding of
characteristic matrix. Perspex is available in the form of sheets of different thickness. The
cell which is used to hold the sample in the waveguide WG-14 was 5.8mm to allow for
72
Experimental Setup
variations from nominal thickness of 6.00mm Perspex sheet. The other sizes in which it is
available are 2mm, 3mm, 4mm, 5mm, 8mm and 10mm etc.
Care was taken of using the clean samples using a soft brush so that it was not damage the
surfaces. It is important because it directly affect the measured S-parameters. A complete data
sheet of the material Perspex is given in appendix-G. Following is the Figure 6.2.1 which
shows one of the prepared sample placed on the cell.
Figure-6.2.1. Perspex prepared sample placed on the cell
6.3. Sample Preparation

The samples were machined from Perspex layer sheet using a vertical milling machine with
three axis digital readout with the resolution of 5 microns. The slots were machined with a
1mm wide slitting saw. The machining of the grooves was much more difficult then
machining the slots. The grooves were machined with a 45 degrees dovetail cutter. To obtain
the different grooves angles the head of milling machine was moved for the vertical to the
appropriate angle.
6.4. Different Sizes and Shapes of Interface Used

In this project there are different shapes and depth of the slots (rectangular) and grooves (with
different angles) are analyzed for the complex permittivity. A VNA is used for the
measurement of the S-parameters of the sample which is placed in the rectangular wave guide

73
Experimental Setup
(WG-14). Using the C++ program, which is given in the appendix-D, the complex
permittivity of the sample is calculated. Following Tables-6.4.1 to 6.4.3 include the detail of
different sample which are made to analyze in this project. The air fill factor of each case is
also calculated which is the simple ratio of the volume of the air to the total volume of the
profiled layer. It is equivalent to the second phase in the Maxwell-Garnett theory, [1] this being
the main factor which affects the complex permittivity.
6.4.1. Rectangular Slots

Table-6.4.1 contains the physical dimensions of the sample having rectangular slots which
were used for the measurement of S-parameters from which the complex permittivity was
calculated using the C++ program (see appendix-D). This uses the algorithm describe in the
chapter-4 of this dissertation. The Figure 6.4.1 shows the practical sample used.
Pitch
CF (mm)
Width of Slot Depth of Slot Air Fill

CE (mm)
AB (mm)
Factor
4.0 *
3 = 1.732
0.4330
4.0 **
3 = 1.732
0.4330
4.0
0.25
4.5
0.222
5.0
0.2
Table-6.4.1. Slots of different sizes pitches and air fill factor.

74
Experimental Setup
Figure-6.4.1. Picture of rectangular slots used

Here in Table-6.4.1** means that the slots on the sample are not regularly distributed on the
face of Perspex layer and there are some non-uniformity on the edges. Where * means that
discontinuities are regular on the face of Perspex layer with equal end spacing on both ends.
These are the special sample made for analyzing the effect on the complex permittivity on the
distribution of the slots on the sample. The Figure-6.4.2 shows the cross-sectional view of the
rectangular slots with pitch 4mm and of depth of 3mm .
Figure-6.4.2. Profile layer having regular, periodic and rectangular

grooves and discontinuities with dimensions of AB = 3mm,
CE = 1mm, CF = pitch = 4mm,
AG = 5.8mm,
and having the
groove area 3mm .

75
Experimental Setup
6.4.2. 60 Degree Grooves

Table-6.4.2. contains the physical dimensions of the sample having the grooves of 60 degree
angle which are made in the workshop for the measurement of S-parameters so that complex
permittivity can be calculated for that using the C++ program (see appendix-D) which uses
the algorithm describe in the chapter-4 of this dissertation. The Figure 6.4.3 shows the
practical sample used.
Pitch
Width at the top
CF (mm) CE = 2
Depth
(mm) AB (mm)
3 pitch
Air fill factor[AFF]
1.2
1.155
0.4811
1.3
1.155
0.4441
2.5
1.155
0.2309
3.0
1.155
0.1925
Table-6.4.2. Grooves with 60 degree angle with different pitches and air fill factor.
Figure-6.4.3. Picture of all the samples of 60 Degrees Grooves manufactured in this project
The Figure 6.4.4 shows the cross-sectional view of the sample of 60 degree grooves with
pitch of 4mm and of depth of 3mm .
76
Experimental Setup
Figure-6.4.4. Profile layer having regular and periodic grooves and discontinuities
with dimensions of AB = 3mm, CD = 1mm, CE = 2mm, CF = pitch = 4mm,
AG = 5.8mm, = 60 0 , and having the groove area equal to 3mm 2 .

angle which are made in the laboratory for the measurement of S-parameters so that complex
permittivity can be calculated for that using the C++ program (see appendix-D) which uses
the algorithm describe in the chapter-4 of this dissertation. The Figure 6.4.5 shows the
Pitch
Width from
Depth Air fill factor
(mm)
the top (mm) (mm)
[AFF]
3.0
0.3333
4.0
0.25
5.0
0.2
6.0
0.1667
Table-6.4.3. Grooves with 90 degree angle with different

pitches and air fill factor.

77
Experimental Setup
Figure-6.4.5. Picture of all the samples of 90 Degrees Grooves

The Figure-6.4.6 shows the cross-sectional view of the sample of 60 degree grooves with
pitch of 4mm and of depth of 1 mm. 2.31 mm pitch was used to obtain the same air fill factor
[AFF] as that of 4mm pitch 120 degree grooves
Figure-6.4.6. Profile layer having regular and periodic grooves and

discontinuities with dimensions AB = 1mm, CD = 3mm, CE = 2mm
CF = pitch = 4mm, AG = 5.8mm, = 90 0 , and having the groove area of 3mm 2 .

angle which are made in the laboratory for the measurement of S-parameters so that complex
permittivity can be calculated for that, using the C++ program (see appendix-D) which uses
78
Experimental Setup
the algorithm describe in the chapter-4 of this dissertation. The Figure-6.4.7 shows the
Pitch
Width at the top
Depth
Air fill factor
CF (mm)
CE (mm)
AB (mm)
[AFF]
4.0
2 3 3.4641
0.4330
5.0
2 3 3.4641
0.3464
6.0
2 3 3.4641
0.2887
7.0
2 3 3.4641
0.2474
8.0
2 3 3.4641
0.2165
Table-6.4.4. Grooves with 120 degree angle with different pitches and air fill factor.
Figure-6.4.7. Picture of all the samples of 120 Degrees Grooves

The Figure-6.4.8 shows the cross-sectional view of the sample of 120 degree grooves with
pitch of 4mm and of depth of 1 mm.

79
Experimental Setup
Figure-6.4.8. Profile layer having regular and periodic grooves

and discontinuities with dimensions AB = 1mm, CD = 3mm,
CE = 2 3mm , CF = pitch = 4mm,
AG = 5.8mm, = 120 0 ,
and
having the groove area of 3mm 2 .
6.5. Previously Obtained Experimental Results and Problems with them.

This section includes the results obtained by an undergraduate student of University of
Manchester named Ahtasham Baig. He has performed this kind of experiments under the
guidance of Dr. Arthur. D. Haigh. He plotted the graph by using the material fill factor which
is defined as the ratio of the volume of the material to the total volume of the profile layer on
the horizontal axis and the real part of the complex permittivity on the vertical axis at 6GHz
and 8GHz he obtained the curves shown in Figure-6.5.1 and 6.5.2. There are number of
problems with these results
1. In many cases the imaginary part of the complex permittivity came out to be positive.
The reason for this is explained in Chapter 7.
2. As the material fill factor increases in the case of 120 degree grooves real part of
complex permittivity decreases at 6GHz which is an other strange result and totally
unexpected. It is found here in this project that this is because of different modes of
electromagnetic wave scattering which depends upon the groove angle and frequency.
Same kind of trend was seen in the curve plotted for 8GHz.

80
Experimental Setup
3. Slots follow the general formula given by Maxwell-Garnett [1] but for the cases of
grooves of different angles and of different air or material fill factor the value of the
real part of complex permittivity came out to be very far from the expected value from
Maxwell-Garnett theory.
4. The value of the real part of complex permittivity for the sample with 90 degree
grooves and material fill factor of 0.7 approximately at 6GHz is less then expected
value.
5. Also the range of different material fill factors in the curve is not enough to conclude
the trend and derivation of the general formula.
6. There were only two samples with 60 degree grooves used to measure the complex
permittivity.
7. Ahtasham uses material fill factor but in Maxwell-Garnett theory there is also the
concept of air fill factor which are related as
air fill factor = 1 material fill factor
(6.5.1)
8. The values of the real part of complex permittivity for the case of 60 Degree curves
are higher then the expected values.
9. No reason was given for these kinds of abnormalities in the experimental results.
These are the problems solved in this dissertation project by analyzing the data taken from the
VNA and then from C++ program. Also Maxwell-Garnett equations are modified in 8
different cases by using the experimental data. See Chapter-7 on Conclusions for analyzing
the results of this project and the previously known results.

81
Experimental Setup
Meas ured values of P ermittivity (at 6G Hz ) Vs 2 P has e Dielec tric

mixing fromula(1) values
2.4
P erm ittivity Values (R eal)
2.2
2
1.8
Ideal values from the

F ormula
G rooves at 90 Deg
1.6
G rooves at 60 Deg
1.4
G rooves at 120 Deg
1.2
S lots at different P itc hes
1
0.2
0.3
0.4
0.5
0.6
F ill fa c tor for sa m ple
0.7
0.8
0.9
Figure-6.5.1. Plot of real part of complex permittivity for slots and grooves of different
angles and material fill factor at 6GHz. In addition to this the Maxwell-Garnett
mixing curve is also plotted which is independent of frequency.
Meas ured values of P ermittivity (at 8 G Hz ) Vs 2 P has e

Dielec tric mixing fromula(1) values
2.6
2.4
F ormula
G rooves at 90
2.2
2
1.8
G rooves at 60
1.6
G rooves at 120
1.4
S lots at different pitc hes
1.2
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Figure-6.5.2. Plot of real part of complex permittivity for slots and grooves of different
angles and material fill factor at 8GHz. In addition to this the Maxwell-Garnett
mixing curve is also plotted which is independent of the frequency.
(These results are shown here with the permission from Dr. Arthur. D. Haigh and Ahtasham Baig)
6.6. Technical Difficulties

Initially care was not taken to make the sample of exact size of 5.8mm thickness. Hence some
of the samples received from the laboratory are over sized and some of them are under sized.
When these samples were used to find the complex permittivity of the profiled layer, it results
in very strange and unacceptable values of complex permittivities which are much away from

82
Experimental Setup
the value predicted by the Maxwell-Garnett mixing rule. The reason for that was investigated
and found that there was a problem of non-alignment of the plane of calibration and the
sample under test. This was also proved mathematically by considering the problem as the 3layer one for the under-sized samples with layer one as the plane Perspex layer, second was
profiled and the third one as the air layer.
It was also observed that, this problem affect the phase of the S-parameters too much then the
magnitude of the S-parameters.
After this identification, new orders were placed to the laboratory with the request of paying
more emphasis on the thickness of samples. This process and problem put a delay of one
week in this project but the result of this one week hard work is to understand the importance
of the thickness of the samples placed in the waveguide for measurement and the alignment of
sample with the plane of calibration.
6.7. Steps Involves in this Method

The basic steps involved in this method are,
1. Measure S- Parameters of profiled sample with the help of VNA.
2. Measure S- Parameters of the plane sample with the help of VNA.
3. Calculation of the Characteristic Matrix from the S-Parameters of the plane sample.
4. Calculation of the Characteristic Matrix from the S- Parameters of both the layers
using equations (4.2.2).
5. Finding the inverse of the Characteristic Matrix of the plane sample.
6. Calculate the Characteristic Matrix of the profile layer.
7. From the Characteristic Matrix of the profiled layer calculate the complex permittivity
of the profiled layer as mentioned in chapter-4.

83
Experimental Setup
6.8. Experimental Results

6.8.1. Slots
Firstly the S-parameters are taken from VNA for all the slots cases. They are given in
appendix-F and from them using a computer program which using the technique called
Deembedding of characteristic matrix discussed in chapter-4, complex permittivity is
calculated which are given below at different frequencies.
The two samples analyze first was with same fill factor and slot sizes but the distribution of
the slots on the face of the Perspex layer is different and they give approximately the same
result with in the calibration limits.
Rectangular Slots with pitch of 4.0mm, width of
3 = 1.732 ,
depth of 1mm and with air fill factor (AFF)=0.4330 (Equal end spacing)
Frequency
6GHz
1.741-j0.0338
7 GHz
1.812-j0.0804
8 GHz
1.920-j0.0975
Table-6.8.1. Measured values of Complex permittivity for the case of slots with 4.0mm pitch
3 = 1.732 ,
depth of 1mm and with air fill factor (AFF)=0.4330 (unequal end spacing)
Frequency
6 GHz
1.680-j0.0144
7 GHz
1.748-j0.07
8 GHz
1.864-j0.0964

84
Experimental Setup
Which clearly indicate that complex permittivity is dependent only on the air fill factor and
not on the distribution of the discontinuities on the interface. The reason for that is electric
field is zero on the short wall of waveguide.
Some of the more results taken are given below for different slots and their detail Sparameters are given in appendix-F.
Rectangular Slots with pitch of 4.0mm, width of 1mm,

depth of 1mm and with air fill factor (AFF)=0.25
Frequency
6 GHz
2.220+j0.0393
7 GHz
2.142-j0.0040
8 GHz
2.165-j0.0583
Note the positive sign of the imaginary part of the complex permittivity at 6GHz the detail
discussion about this is given in chapter no. 7 of this report.

Frequency
6 GHz
2.315+j0.0383
7 GHz
2.236-j0.0694
8 GHz
2.244-j0.1150

85
Experimental Setup

Frequency
6 GHz
2.463+j0.0626
7 GHz
2.4-j0.0408
8 GHz
2.379-j0.0371

The complex permittivity calculated from the S-parameters for the grooves of angle 60
degrees are given below.

Frequency
6 GHz
1.408-j0.516
7 GHz
1.441-j0.0206
8 GHz
1.517-j0.0645
1.2mm pitch

86
Experimental Setup

Frequency
6 GHz
1.778+j0.06
7 GHz
1.694+j0.0467
8 GHz
1.749+j0.1222
1.3mm pitch

Frequency
6 GHz
1.855+j0.0555
7 GHz
1.892+j0.0584
8 GHz
1.997-j0.0258
2.5mm pitch

Frequency
6 GHz
1.872-j0.0127
7 GHz
1.956-j0.0092
8 GHz
2.079-j0.0595
3.0mm pitch
87
Experimental Setup

Degrees are given below.

Frequency
6 GHz
1.900+j0.0595
7 GHz
2.002+j0.0431
8 GHz
2.015+j0.0517
with 2.0mm pitch

Frequency
6 GHz
2.067-j0.0311
7 GHz
1.972-j0.0467
8 GHz
2.027+j0.0347
with 4.0mm pitch

88
Experimental Setup
Grooves of 90 degrees with pitch of 5.0, width of 2.0mm,

Frequency
6 GHz
2.436+j0.1467
7 GHz
2.296+j0.1289
8 GHz
2.336+j0.1985
with 5.0mm pitch

Frequency
6 GHz
2.462+j0.0196
7 GHz
2.321+j0.0219
8 GHz
2.371+j0.1155
with 6.0mm pitch

Degrees are given below

Frequency
6 GHz
1.536+j0.05
7 GHz
1.593+j0.0044
8 GHz
1.690-j0.014
with 4.0mm pitch
89
Experimental Setup

Frequency
6 GHz
1.756+j0.053
7 GHz
1.788+j0.0615
8 GHz
1.878+j0.0483
with 5.0mm pitch

Frequency
6 GHz
1.987-j0.0119
7 GHz
1.889-j0.0081
8 GHz
1.934+j0.0885
with 6.0mm pitch

Frequency
6 GHz
2.278+j0.0898
7 GHz
2.149+j0.0923
8 GHz
2.185+j0.18
with 7.0mm pitch

90
Experimental Setup

Frequency
6 GHz
2.286+j0.0889
7 GHz
2.165+j0.0791
8 GHz
2.196+j0.1613
with 8.0mm pitch
In majority of the case the imaginary part seems to be positive. Lot of attention was given to
this part of the result and finally it was concluded that the imaginary part of the profiled layer
was smaller then the calibration error in V.N.A. Detail of this is given in Chapter no. 7.

91
Conclusions and empirical formulae derived
CHAPTER No 7
7. CONCLUSIONS AND EMPIRICAL FORMULAE DERIVED
This project studied the complex permittivity of profiled layers in a Perspex block inserted in
a waveguide cell using both simulations and measurement technique. By considering the
results of the simulation and experimental work the following conclusions could be derived,
1. The imaginary part of the complex permittivity of the experimental data came out to be
positive for number of cases, this is clearly wrong. Time was spent on trying to find the
reason of this and final conclusion was the experimental limitation of the VNA to
measure such a small value. This means that the VNA used or available was not
sufficiently precise to measure such a small imaginary part. The proof of that is given in
appendix-H in which a C++ program is used to calculate the S-parameters for the two
layer problem firstly with the imaginary part of complex permittivity 0.05 and secondly
with -0.05 and it is shown that the difference between the values of S-parameters for these
two cases are less than the calibration error.
2. The values of the real part of complex permittivities for the case of slots at 6GHz and
8GHz obtained experimentally and the expected value of the permittivities using
Maxwell-Garnett mixing formula are given in Table-7.1 and it is clear that there is a
difference between the experimental value and the expected value of the permittivities.
The Maxwell-Garnett mixing rule [ 6 ] is given as
eff = 0 + 3M f 0
+ 2 0 M f ( 0 )
(7.1)
where
0 = Relative permittivity of free space or air.
= Relative permittivity of Perspex layer (used in this project)

92
M f = material fill-factor, defined as the ratio of the volume of the
material (Perspex) to the total volume of the profiled layer.

An equation was derived for this particular case when 0 = 1 , = 2.62 (neglecting the
imaginary part) as
eff =
4.62 + 3.24 M f
4.62 1.62 M f
(7.2)
But this original Maxwell-Garnett formula does not predict the permittivity for these cases
as Maxwell-Garnett theory was derived for spherical inclusions which are randomly
distributed by volume in the background material, which is clearly not the case here. Here
the discontinuities are regular and only superficial. Hence this equation is amended with
the help of data obtained experimentally using numerical techniques which uses matrix
algebra to solve homogenous simultaneous linear equations and the new equation derived
from the Maxwell-Garnett equation valid for the case of slots in the Perspex layer at 6GHz
is given below,
eff =
3 .8 + 4 .0 M f
4 .5 1 .9 M f
(7.3)
In the Table-7.1 the results from the amended Maxwell-Garnett equation at 6GHz is also
included in the second last column. Similarly at 8GHz the value of permittivity from
Maxwell-Garnett theory does not agree with the experimentally obtained data hence this
equation is also modified for 8GHz to
eff =
3 .8 + 4 .2 M f
4.62 1.98M f
(7.4)
And the values obtained from this equation which we call as the amended MaxwellGarnett equation for the case of slots at 8GHz are given in the last column of the Table-

93
7.1. In Table 7.1, the data for the pitches 1.4 to 3 mm are copied from previous
measurements.
Rectangular Slots
Pitch
(mm)
Air Fill
Factor
[AFF]
Material
Real Part
Real Part
Fill
Factor
[MFF]
of * at
6GHz
of * at
8GHz
Original
MaxwellGarnett
Formula
Amended
MaxwellGarnett
Amended
MaxwellGarnett
Formula at
6GHz
Formula at
8GHz
1.4
0.7143
0.2857
1.22
1.21
1.334
1.249
1.267
1.7
0.5882
0.4118
1.47
1.43
1.506
1.465
1.477
2.0
0.5
0.5
1.64
1.68
1.638
1.6338
1.64
2.5
0.4
0.6
1.79
1.89
1.799
1.845
1.842
3.0
0.33333
0.66667
1.97
2.08
1.915
2.000
1.988
4.0
0.25
0.75
2.22
2.165
2.07
2.2113
2.187
4.5
0.22222
0.77778
2.315
2.244
2.13
2.287
2.257
5.0
0.2
0.8
2.463
2.379
2.17
2.349
2.314
Table:-7.1. Values of the real pert of complex permittivities for the case of slots obtained from
Experiments, Maxwell-Garnett mixing rule and from Amended Maxwell-Garnett
formula at 6GHz and at 8GHz.
For completeness two Excel plots one at 6GHz and other at 8GHz for the case of slots
having three curves one is experimental, second is original Maxwell-Garnett and the third
one is the amended Maxwell-Garnett curves are shown in the Figure-7.1 and 7.2.
In the Figure-7.1 and 7.2, the blue curve is from experimental data, pink is from the
original Maxwell-Garnett mixing rule and the yellow one is the curve obtained from the
amended Maxwell-Garnett equation.
It is clear from the Graphs-7.1 and 7.2 of the real part of the complex permittivities at
6GHz and 8GHz respectively that the amended Maxwell-Garnett equations give better

94
results and approximation for the permittivity for almost all the values of material fill
factor.
Rectangular Slots at 6GHz
Real Part of Complex Permittivity
2.5
Experimental at 6GHz
1.5
Maxwell-Garnett
Amended Maxwell-Garnett
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Material Fill- Factor
Figure-7.1. Plot of real part of complex permittivity using experimental data, MaxwellGarnett mixing rule and amended Maxwell-Garnett rule at 6GHz for the case
of slots.
Recatngular Slots at 8GHz

2.5
Real Part of Permittivity
1.5
Experimental values at 8GHz
Maxwell-Garnett
Amended Maxwell Garnett
1
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Material Fill factor
of slots.

95
At both frequencies the general trend of original Maxwell-Garnett curve is that for high
material fill factor (MFF), it gives the smaller value of real part of complex permittivity
than the measured one and for smaller value of material fill factor (MFF) it gives the
higher value then the experimentally measured.
At 6GHz, Maxwell-Garnett mixing rule gives values of permittivity which are very near
to that of experimentally obtained when the material fill factor lies between 0.4 to 0.6.
The slope of Maxwell-Garnett mixing curve is less then the slope of the curve made from
the data obtained experimentally, also there is an abrupt rise in the permittivity value as
the material fill factor increases from 0.8, both at 6GHz and at 8GHz.
3. The values of the real part of complex permittivities for the case of 60 degrees grooves at
6GHz and 8GHz obtained experimentally and the expected value of the permittivities
using Maxwell-Garnett mixing formula are given in Table-7.31 and it is clear that there is
a difference between the experimental value and the expected value of the permittivities,
particularly at 6GHz. One can observe that Maxwell-Garnett formula gives very near
approximate values at 8GHz for almost all the material fill factor. As the Maxwell-Garnett
formula in this case is given in equation 7.2. But this formula does not predict the
permittivity for these cases as Maxwell-Garnett theory was derived for spherical
inclusions as mentioned above which is clearly not the case here. Here the discontinuities
are regular and on the surface of the sample. Hence this equation is amended with the help
of data obtained experimentally using numerical techniques and the new equation derived
from the Maxwell-Garnett equation valid for the case of 60 Degree grooves in the Perspex
layer at 6GHz is given below,
eff =
4.85 + 3.38M f
4.62 1.62 M f

(7.5)
96
In the Table-7.2 the results from the amended Maxwell-Garnett equation at 6GHz is also
included in second last column. Similarly at 8GHz the value of permittivity from
Maxwell-Garnett theory does not agree (but the difference is not too much in this case)
with the experimentally obtained data hence this equation is also modified for 8GHz to
eff =
4 .5 + 3 .3 M f
(7.6)
4.62 1.62 M f
And the values obtained from this equation which we call as the amended MaxwellGarnett equation for the case of 60 Degree grooves at 8GHz are given in the last column
of the Table-7.2. The samples with pitches of 1.3mm to 2.0mm are the old samples, and
the rest of them are the new one prepared and analyzed during this project.
Grooves with angle 60 Degrees

Pitch
(mm)
Air Fill
Factor
[AFF]
Material
Real Part
Fill
Factor
[MFF]
of * at
6GHz
Real
Part
of * at
8GHz
Original
MaxwellGarnett
Formula
Amended
MaxwellGarnett
Amended
MaxwellGarnett
Formula at
6GHz
Formula at
8GHz
1.2
0.4811
0.5189
1.408
1.517
1.667266
1.747
1.6438
1.3
0.4441
0.5559
1.778
1.749
1.726365
1.809
1.7031
1.4
0.4124
0.5876
1.85
1.75
1.778535
1.864
1.7554
1.7
0.3396
0.6604
1.99
1.89
1.904058
1.995
1.8814
2.0
0.2887
0.7113
2.09
1.99
1.996892
2.092
1.9746
2.5
0.2309
0.7691
1.855
2.107813
2.208
2.0859
0.1925
0.8075
1.872
2.09
2.184972
2.289
2.1634
Maxwell-Garnett formula at 6GHz and at 8GHz.

97
Real part of Complex

permittivity
Grooves 60 Degrees at 6GHz

2.5
2
Experimental data at
6GHz
Maxwell Garnett
1.5
1
Amended Maxwell
Garnett
0.5
0
0
0.5
Material Fill-Factor
of 60 degree grooves.

Real part of complex
permittivity
2.5
2
Experimental data
1.5
Maxwell-Garnett
Amended MaxwellGarnett
1
0.5
0
0
0.5
For completeness two excel plots one at 6GHz and other at 8GHz for the case of 60
degrees grooves having three curves one is experimental, second is original MaxwellM.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering
98
Garnett and the third one is the amended Maxwell-Garnett curves are shown in the Figure7.3 and 7.4.
In the Figure-7.3 and 7.4, the blue curve is from experimental data, pink is from the
original Maxwell-Garnett mixing rule and the yellow one is the curve obtained from the
amended Maxwell-Garnett equation.
By considering the graph shown in Figure-7.3 and 7.4 it is clear that within certain limits
of material fill factor the amended Maxwell-Garnett equation gives the results which are
better then the original Maxwell-Garnett mixing equation mentioned as equation-7.2.
Original Maxwell-Garnett equation gives the value of the permittivity as 6GHz less then
the values experimentally measured within the material fill factor of 0.5 to 0.7. For the
material fill factor less than 0.5 or greater then 0.7 at 6GHz there are very strange and
unexpected kind of results because generally it is expected that by the increase in the
material fill factor there is increase in the permittivity of the profiled layer. It is assumed
that there is some thing wrong with the experimental measurement or the new samples are
made up from the different sheet of Perspex having different permittivity.
Almost same kind of scenario is there at 8GHz but within the limits of material fill factor
mentioned above Maxwell-Garnett equation predict the value of real permittivity very
close to experimental one. The strange behaviour of the drop of permittivity as material
fill factor increases from 0.7 can be seen here also but it is not as severe as in the case of
6GHz. In addition to this to get the better value of permittivity can be calculated from the
amended Maxwell-Garnett equation given as equation-7.6.
4. Similarly for the grooves of 90 Degree angle the amended Maxwell-Garnett equation at
6GHz is
eff =
3 .0 + 4 .2 M f
4 .4 2 .2 M f

(7.8)
99
and at 8GHz the amended Maxwell-Garnett equation is
eff =
4.71 + 3.3M f
(7.9)
4.62 1.77 M f
And the corresponding Table for 90 degree grooves is given below as Table-7.3.

Pitch
(mm)
Air Fill
Factor
[AFF]
Material
Real Part
Fill
Factor
[MFF]
of * at
6GHz
Real
Part
of * at
8GHz
Original
MaxwellGarnett
Formula
Amended
MaxwellGarnett
Amended
MaxwellGarnett
Formula at
6GHz
Formula at
8GHz
2.0
0.5
0.5
1.5
1.7
1.638
1.545
1.703
2.5
0.4
0.6
1.79
1.857
1.799
1.792
1.88
3.0
0.3333
0.6667
1.9
2.015
1.915
1.977
2.009
4.0
0.25
0.75
2.067
2.027
2.07
2.236
2.182
5.0
0.2
0.8
2.436
2.336
2.17
2.409
2.294
6.0
0.1667
0.8333
2.462
2.371
2.238
2.532
2.372
The samples with pitches of 2.0mm and 2.5mm are the old samples, and the rest of them
are the new one prepared and analyzed during this project. Two excel plots one at 6GHz
and other at 8GHz for the case of 90 degrees grooves having three curves one is
experimental, second is original Maxwell-Garnett and the third one is the amended
Maxwell-Garnett curves are shown in the Figure-7.5 and 7.6.

100
Rel part of complex

permittivity
3
2.5
2
Experimental at 6GHz
Maxwell-Garnett
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
Material fill factor
Real part of Complex

permittivity
2.5
2
Experimental Result at 8GHz
Maxwell-Garnett
Amended Maxwell Garnett
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
5. Similarly for the grooves of 120 Degree angle the amended Maxwell-Garnett equation at
6GHz is
eff =
2 .7 + 4 .2 M f
4 .4 2 .2 M f

(7.10)
101
and at 8GHz the amended Maxwell-Garnett equation is
eff =
3.78 + 3.3M f
(7.11)
4.62 2.13M f
And the corresponding Table for 120 degree grooves is given below as Table-7.4.

Pitch
(mm)
Air Fill
Factor
[AFF]
Material
Real Part
Fill
Factor
[MFF]
of * at
6GHz
Real
Part
of * at
8GHz
Original
MaxwellGarnett
Formula
Amended
MaxwellGarnett
Amended
MaxwellGarnett
Formula at
6GHz
Formula at
8GHz
0.433
0.567
1.53
1.69
1.7445
1.612
1.6561
4.5
0.3849
0.6151
1.77
1.7
1.825
1.734
1.7553
0.3464
0.6536
1.756
1.878
1.892
1.838
1.8393
0.2887
0.7113
1.987
1.934
1.9969
2.006
1.9734
0.2474
0.7526
2.278
2.185
2.0755
2.136
2.0761
0.2165
0.7835
2.286
2.196
2.1364
2.238
2.157
All the samples mentioned above are those which were made during this project with only
one exception of exception 4.5mm pitch sample whose data is just copied from the
experiments performed by Dr. Arthur. D. Haigh. Two excel plots one at 6GHz and other
at 8GHz for the case of 120 degrees grooves having three curves one is experimental,
second is original Maxwell-Garnett and the third one is the amended Maxwell-Garnett
curves are shown in the Figure-7.7 and 7.8. The pink curve in the Figures-7.7 and 7.8 are
of Maxwell-Garnett mixing rule, the blue one is of experimental data and the yellow is the
amended Maxwell-Garnett mixing rule valid for this case.

102
Real Part of Complex permittivity

2.5
2
Experimental data at
6GHz
Maxwel-Garnett
1.5
1
Amended MaxwellGarnett
0.5
0
0
0.2
0.4
0.6
0.8

Real part of complex permittivity
2.5
1.5
Experimental Data at 8GHz

Maxwell-Garnett
0.5
0
0
0.2
0.4
0.6
0.8

103
Amended Maxwell-Garnett equation gives the values of the real part of complex
permittivity which is much closer to the experimental one as compared to the original
Maxwell-Garnett mixing rule.
At lower material fill factor [MFF] Maxwell-Garnett equation gives the higher value of
real part of complex permittivity as compared to the experimental results, but for the
material fill factor greater than 0.7 it starts giving values which are less than the
experimental values and this trend can be seen at both mentioned frequencies.
There is very small increase in the real part of complex permittivity of the sample which
have the profiled layer with pitch grater than 7.0mm having grooves of 120degrees can be
can be reasoned as the different mode of scattering of electromagnetic waves which
depends on the shape and angle of the grooves in addition to frequency.
6. All the equations derived from the Maxwell-Garnett equation, which are valid for
different shapes of discontinuities at 6GHz and 8GHz are summarized below in the Table7.5.
6GHz
Slots
60 degrees Grooves
90 degrees Grooves
120 degrees Grooves
eff =
eff =
3 .8 + 4 .0 M f
4 .5 1 .9 M f
4.85 + 3.38M f
4.62 1.62 M f
eff =
eff =
3 .0 + 4 .2 M f
4 .4 2 .2 M f
2 .7 + 4 .2 M f
4 .4 2 .2 M f
8GHz
eff =
eff =
eff =
eff =
3 .8 + 4 .2 M f
4.62 1.98M f
4 .5 + 3 .3 M f
4.62 1.62 M f
4.71 + 3.3M f
4.62 1.77 M f
3.78 + 3.3M f
4.62 2.13M f
Table-7.5 Amended Maxwell-Garnett formulae in the different cases.

7. Two different samples having same material fill factor [MFF] having slots which are
3mm wide and 1mm deep, but with different end spacing were made and analyzed for

104
S-parameters (to see data regarding those sample see appendix-F) for the value of Sparameters which are well within the calibration error. It is deduced that complex
permittivity only depends only on the material fill factor [MFF] and not on the distribution
of the discontinuities on the interface. The reason for that is electric field on the short wall
of waveguide is zero.
8. There is a very clear agreement between the experimental values of real part of complex
permittivity and the results obtained from simulation one. This is given in the Table-7.6.
Experimental (Real permittivity)

Shapes
Slots
60
degree
grooves
90
degrees
grooves
12
degrees
grooves
Simulation (Real permittivity)
Pitch
6GHz
7GHz
8GHz
6GHz
7GHz
8GHz
4.0
2.22
2.142
2.165
2.121
2.041
1.96
4.5
2.315
2.236
2.244
2.17
2.109
2.021
5.0
2.463
2.4
2.379
2.187
2.113
2.012
1.2
1.408
1.44
1.517
1.813
1.788
1.747
1.3
1.778
1.694
1.749
1.823
1.801
1.776
2.5
1.855
1.892
1.997
2.224
2.12
2.16
3.0
1.872
1.956
2.079
2.286
2.263
2.227
3.0
1.9
2.002
2.015
1.985
1.918
1.811
4.0
2.067
1.972
2.027
2.109
2.011
1.942
5.0
2.436
2.296
2.336
2.202
2.131
2.05
6.0
2.462
2.321
2.371
2.257
2.194
2.112
4.0
1.536
1.593
1.7
1.828
1.747
1.673
5.0
1.76
1.8
1.88
1.972
1.884
1.829
6.0
1.987
1.889
1.934
2.067
2.011
1.924
7.0
2.278
2.149
2.185
2.113
2.039
1.957
8.0
2.286
2.165
2.196
2.191
2.092
2.023
Table-7.6 Comparison between simulation results and experimental one

105
9. Generally it is clear that as the Material fill factor [MFF] increases the real part of
complex permittivity increases as expected.
10. The small differences are because of the calibration error.
11. It is also observed that as the frequency increases the general trend is that there is decrease
in the real part of complex permittivity.
12. The depth of the rectangular slot not only affects the real part of the complex permittivity
but it also affects the imaginary part. If the depth is increased by keeping the air fill factor
(AFF) constant it will increase both the real and the magnitude of imaginary part of
complex permittivity. The increase in the magnitude of the imaginary part is because of
the increase in the loss due to electromagnetic scattering.
13. By increasing the frequency from 6GHz to 8GHz the real part of the complex permittivity
goes down while the imaginary part first goes up and then goes down.
14. The largest difference in the simulation results and experimental values are in the case of
60 degree grooves at 6GHz. This is because of different modes of electromagnetic wave
scattering.
15. In all the cases and at all frequencies it is clear from the simulation data the imaginary part
of complex permittivity is greater in magnitude then the imaginary part of the complex
permittivity of Perspex which is 0.02 and the real part of the permittivity for the profiled
layer is less than that of Perspex. This increase in the magnitude of the imaginary part is
because of the electromagnetic wave scattering, and the decrease in the real part is
basically because of decrease in the attenuation. The real part of permittivity tells the
attenuation and the imaginary part tells the phase shift.
16. Grooves with 90 degree included angle and with 120 degree included angle with same air
fill factor (AFF) of 0.4330 are simulated and from the complex permittivities of these

106
profile layers it is quit evident that 120 degree grooves have larger imaginary part of the
permittivity and hence more lossy because of more scattering loss.
17. .Overall simulation result agrees with the experimental values but in case of grooves they
both deviate from the prediction of Maxwell Garnett.
18. By comparing the slots with the 90 degree grooves with the same air fill factor (AFF) of
0.5 it is clear that grooves has greater magnitude of the imaginary part of complex
permittivity which shows that grooves are more lossy.

107
References
8. References:
[1]. J.C Maxwell-Garnett, Philo, Trans. R. Soc. London, Ser. A 203, 385 (1904).
[2]. Pierre Mallet, C. A. Guerin and Anne Sentenac, Phys. Rev. B 72, 014205 (2005).
[3]. D. Stroud and O. Levy, Phys. Rev. B 56, 8035 (1997).
[4]. D. Stroud and P. F. Pan, Phys. Rev. B 13, 1434 (1976).
[5]. N. J. Pinto, A. A. Acosta, G. P. Sinha and F. M. Aliev, Synth. Met. 113 (2000) 77.
[6]. A. H. Sihvola and O. P. M. Pekonen, J. Phys. D: Appl. Phys. 29 (1996) 514-521.
[7]. L. Tsang and J. A. Kong, Scattering of electromagnetic waves, Advanced Topics (Wiley,
New York, 2001).
[8]. S. Ramo, T. R. Whinnery, and T. van Duzer, Fields and Waves in Communication
Electronics, John Wiley & Sons, N. Y., 1965.
[9]. R. E. Collin, Foundation of Microwave Engineering, Second Edition, McGraw-Hill,
N.Y., 1992.
[10]. C. A. Balanis, Advanced Engineering Electromagnetics, John Wiley & Sons, N.Y.,
1989.
[11]. D. K. Cheng, Fields and Waves Electromagnetics, 2nd ed. Reading, Mass.: AddisonWesley, 1989.
[12]. Feynman, R.P.; Leighton, R.O.; and Sands, Lectures on Physics, vol2, Addison-Wesley,
Reading, Mass., 1964.
[13]. W. H. Hayt, Engineering Electromagnetics, McGraw-Hill Series in Electrical
Engineering, 2005.
[14]. D. M. Pozar, Microwave Engineering, 3rd Edition, Wiley & Sons (2005).
[15]. D. M. Pozar, Microwave and RF design of Wireless System, 2nd Edition, Wiley, N.J.,
(2001).
[16]. R. E. Collin, Field Theory of Guided Waves, McGraw-Hill, N.Y., (1960).

108
References
[17]. C. A. Balanis, Antenna Theory: Analysis and design, John Wiley & Sons, N.Y., (1982).
[18]. R. F. Harrington, Time Harmonic Electromagnetic Fields, McGraw Hill, N.Y., (1961).
[19]. J. A. Stratton, Electromagnetic Theory. McGraw Hill, N.Y., (1941).
[20]. J. R. Wait, Electromagnetic Radiation/rom Cylindrical Structures, Pergamon, New York
1959.
[21]. G. N. Watson, "The diffraction of electrical waves by the earth," Proc. Roy. Soc.
(London), vol. A95, pp. 83-99, 1918.
[22]. L. B. Felsen and N. Marcuvitz, Radiation and Scattering of Waves, Prentice-Hall,
Englewood Cliffs, N.J., 1973.
[23]. Thoria A. Baeraky, Egypt. J. Sol., Vol. (27), No. (1), (2004)
[24]. Tischer, 1960, F.J. Tischer, Measurement of the wave propagation properties of plasma
in the microwave region, IRE Transactions on Instrumentation 2 (1960) (19), pp. 167
171
[25]. E.H. Ni, Technique for permittivity in material science, Scientific Publishing Company,
1999.
[26]. E.J. Vanzura, Claude M. Weil and D.F.Williams, National institute of Standards and
Technology.
[27]. N.I. Sheen, I.M.Woodhead, J.argric Engng Res. (1999) 74, 193-202
[28]. S.B. Kumar, U.Raveendranath, P. Mohanan, K.T. Mathew, M. Hajian and L.P. Ligthart,
Microwave and optical technology letters vol. 26 issue-2, 2000
[29]. Priou A (ed) 1992, Dielectric properties of Heterogeneous Materials (New York:
Elsevier).
[30]. Sihvola A. H and Lindell I V 1990 Chiral Maxwell-Garnett mixing formula Electron.
Lett 26 118-19

109
References
[31]. Weiglhofer W S, Lakhtakia A and Manzon J C 1993 Maxwell-Garnett model for

composites of electrically small uniaxial Objects, Microwave Opt. Technol. Lett. 6 6814
[32]. Sihvola A. 1989 Self-consistency aspects of dielectric mixing theories IEEE Tran
Geosci. Remote Sensing 27 403-15.
[33]. Bottcher C J F. 1952 Theory of Electric Polarization (Amsterdam: Elsevier)
[34]. Polder D and Van Santen J H 1946 The effective permeability of mixture of solids
Physica XII 257-71

110
Appendix-A
Appendix-A
Calibration of 8510 VNA
CRT off/on.#
Off Press key systems followed by CRT off soft key
On Press preset
Ramp or Step frequency scan
For greater accuracy use frequency scan.
To set frequency scan
Press stimulus then Menu soft key and choose either step or scan
To set Z0
Press CALL, MORE, set Z0 and change to 1 ohm.
To load Cal Kit
Left click VNA Cal Kit manager
Select call kit
Click GPIB on tool bar, select e.g. Call Kit 2
Then click GPIB to send to VNA and close pan
Number of calibration standards
1Short 1, 3 Short 2,9 Load 11 Thru
TRL Calibration
Set Z0=0 by pressing Cal and then More
For greater accuracy use averaging
Press response then menu soft key Averaging on *128
In step mode frequency using *128 has little time penalty

111
Appendix-A
Before commencing calibration delete one of 8 previously stored calibrations

Calibration procedure
TRL Thru use
by itself and wait while VNA does 6 frequency scans
TRL Refl $11 and $22 reflection use
TRL Line use
offset short
3
itself and wait while VNA does 6 frequency scans
8
Isolation load not changed for forward and reverse isolation

Assessment of calibration accuracy
Check $11 and $22 using waveguide short circuit from calibration kit
When checking phase use checking offset
Press RESPONSE, MENU, Offset and key in 180.
[These are the notes taken from Dr. Arther. D. Haigh]

112
Appendix-B
Appendix-B
Already Known Experimental Results
Here is the some of the results which are taken by an undergraduate student of University of
Manchester named Ahtasham under the guidance the Dr Arthur D Haigh.
Meas ured values of P ermittivity (at 6G Hz ) Vs 2 P has e Dielec tric

mixing fromula(1) values
2.4
2.2
2
1.8

F ormula
G rooves at 90 Deg
1.6
G rooves at 60 Deg
1.4
G rooves at 120 Deg
1.2
S lots at different P itc hes
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Figure-B.1. Plot of real part of complex permittivity for slots and grooves of different angles
and material fill factor at 6GHz. In addition to this the Maxwell-Garnett
mixing curve is also plotted which is independent of frequency.
Meas ured values of P ermittivity (at 8 G Hz ) Vs 2 P has e

Dielec tric mixing fromula(1) values
2.6
2.4
F ormula
G rooves at 90
2.2
2
1.8
G rooves at 60
1.6
G rooves at 120
1.4
S lots at different pitc hes
1.2
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Figure-B.2. Plot of real part of complex permittivity for slots and grooves of different angles
and material fill factor at 8GHz. In addition to this the Maxwell-Garnett
mixing curve is also plotted which is independent of the frequency.

113
Appendix-C
Appendix-C
Example for the Calculation of Complex Permittivity
Here is an example is solved for the calculation of the complex permittivity when the Sparameters are given. Lets say that we have the S-parameters of the case slots having of 3mm
pitch. The simulation results at 6GHz are,
S11 = 0.363320-j0.418343
S12 = S 21 = 0.633066+j0.530656
S 22 = 0.339234-0.438099
And the physical lengths are l1 = 97.1mm, l2 = 4.8mm, l3 = 1mm, and l4 = 97.1mm with the
relative permittivities are 1 = 1 j 0.0, 2 = 2.62 j 0.02, 3 = ?, 1 = 1 j 0.0 respectively.
Using the equation 4.2.2 with Z 0 =1, one can calculate ABCD parameters for 4-layers as
a5 =
(1 + S11 )(1 S 22 ) + S12 S 21 = 0.1046313577 j 0.2496880156
b5 =
(1 + S11 )(1 + S 22 ) S12 S 21 Z
c5 =
d5 =
2 S 21
2 S 21
(1 S11 )(1 S 22 ) S12 S 21

2 S 21
= 0.2048992488 j 0.1259911982
1
= 0.1249749501 + j 0.4677839405
Z0
(1 S11 )(1 + S 22 ) + S12 S 21 = 1.040925611 j 0.5747926143

2 S 21
First Stage of Deembedding
[A 6 ] =
a6
c6
b6
d 6

114
Appendix-C
From equation 4.5.1

a6 = 0.125647845 j 0.2457123
b6 = 0.00296102 + j 0.136028
c6 = 0.0113601 j 0.655345
d 6 = 0.634205 j 0.00326935
Second Stage of Deembedding
[A 7 ] =
a7
c7
b7
d 7
Using equation 4.5.2

a7 = 0.533636 + j 0.00394066
b7 = 0.000771219 + j 0.418062
c7 = 0.000771219 + j 0.418062
d 7 = 0.495926 + j 0.00434298
Third Stage of Deembedding
[A8 ] =
a8
c8
b8
d8
Using equation 4.5.3
a8 = 0.990784 + j 0.91438 10 5
b8 = 7.7817 10 6 + j 0.0846454
c8 = 0.00229132 + j 0.27289
d 8 = 0.985988 + j 0.000106902
Hence by using equation 4.5.4 and 4.5.5 it can easily be calculated as
Complex Permittivity of layer 3 = 3 = 1.9783 j 0.0581372

115
Appendix-D
Appendix-D
C++ Programs Used for calculation of Complex Permittivity
There are four programs written by Dr. Arthur.D.Haigh using the basic algorithm discussed in
chapter-4 which are used in this project, two of them for the four layer because the simulation
problem is four layer one and rest of the two are for two layers one because experiment
consider the problem as two layer one.
The programs which calculate the complex permittivity of the profile layer from the Sparameters needs the data of the physical dimensions of the layers known permittivity of rest
of the layers and frequency. While the programs which calculate the S-parameters from the
complex permittivity of the material also need the data for the physical dimensions, frequency
and complex permittivity of rest of the layers.
To calculation of the complex permittivity of the material from the S-parameters obtained in
this project from the simulation one can use the following program.
// C++ ADH 2009.

//Program Hwt-rdr.CPP
//edited 20-6-09
#include <iostream.h>
#include <complex.h>
#include <conio.h>
main()
{
clrscr();
float w,f,e11,e12,l1,e21,e22,l2,l3,s21r,s21i,s11r,s11i,s22r,s22i;
float e41,e42,l4,la,beo,lc,p,lg;
complex ga1,ga2,ga3,ga4,z1,z2,z3,r3,z4,a1,b1,c1,d1,a2,b2,c2,d2;
complex a3,b3,c3,d3,a4,b4,c4,d4,a5,b5,c5,d5,a6,b6,c6,d6;
complex a7,b7,c7,d7,a8,b8,c8,d8,s12,e;
cout << " Program Hwt-r4dr calculates permittivity of third" << endl;
cout << " layer in a 4 layer stack" << endl;
cout << " " << endl;
cout << " Enter data requested." << endl;
w=1.372;
f=8;
cout << " Real part of S21 for 4 layers? ";
cin >> s21r;
cout << " Imaginary part of S21 for 4 layers? ";
cin >> s21i;

116
Appendix-D
cin >> s11r;
cin >> s11i;
cin >> s22r;
cin >> s22i;
e11=1;
e12=0;
l1=9.71;
e21=2.62;
e22=.02;
l2=.48;
l3=.1;
e41=1;
e42=0;
l4=9.71;
la=2.9979e10/(f*1e9);
beo=2*M_PI/la;
lc=5.08*w;
p=(la/lc)*(la/lc);
lg=la/sqrt(1-p);
complex i (0,1);
complex e1 (e11,-e12);
complex r1=sqrt(e1-p);
complex s21 (s21r,s21i);
s12=s21;
z1=la/r1/lg;
z2=la/r2/lg;
z4=la/r4/lg;
ga1=beo*r1*i;
ga2=beo*r2*i;
ga4=beo*r4*i;
// ABCD matrix for first layer
a1=cosh(ga1*l1);
b1=z1*sinh(ga1*l1);
c1=sinh(ga1*l1)/z1;
d1=a1;
// ABCD matrix for second layer
a2=cosh(ga2*l2);
b2=z2*sinh(ga2*l2);
c2=sinh(ga2*l2)/z2;
d2=a2;
// ABCD matrix for fourth layer
a4=cosh(ga4*l4);
b4=z4*sinh(ga4*l4);
c4=sinh(ga4*l4)/z4;
d4=a4;
// ABCD matrix for all four layers
a5=((1+s11)*(1-s22)+s12*s21)/s21/2;
b5=((1+s11)*(1+s22)-s12*s21)/s21/2;
c5=((1-s11)*(1-s22)-s12*s21)/s21/2;
d5=((1-s11)*(1+s22)+s12*s21)/s21/2;;
// First stage of deembedding
a6=a5*a4-b5*c4;
b6=-a5*b4+b5*d4;

117
Appendix-D
c6=c5*a4-d5*c4;
d6=- c5*b4+d5*d4;
// Second stage of deembedding
a7=a1*a6-b1*c6;
b7=a1*b6-b1*d6;
c7=-c1*a6+d1*c6;
d7=-c1*b6+d1*d6;
// Third stage of deembedding
a8=a2*a7-b2*c7;
b8=a2*b7-b2*d7;
c8=-c2*a7+d2*c7;
d8=-c2*b7+d2*d7;
cout << "ABCD for 3 different layers from characteristic" << endl;
cout << " matrix using hyperbolic trig functions" << endl;
cout << "a1 is " << a1 << endl;
cout << "b1 is " << b1 << endl;
cout << "c1 is " << c1 << endl;
cout << "d1 is " << d1 << endl;
cout << "a4 is " << a4 << endl;
cout << "b4 is " << b4 << endl;
cout << "c4 is " << c4 << endl;
cout << "d4 is " << d4 << endl;
cout << " ABCD matrix from S parameters" << endl;
cout << "a5 is " << a5 << endl;
cout << "b5 5s " << b5 << endl;
cout << "c5 is " << c5 << endl;
cout << "d5 is " << d5 << endl;
cout << " First stage of deembedding" << endl;
cout << "a6 is " << a6 << endl;
cout << "b6 is " << b6 << endl;
cout << "c6 is " << c6 << endl;
cout << "d6 is " << d6 << endl;
cout << " Second stage of deembedding" << endl;
cout << "a7 is " << a7 << endl;
cout << "b7 is " << b7 << endl;
cout << "c7 is " << c7 << endl;
cout << "d7 is " << d7 << endl;
cout << " Third stage of deembedding" << endl;
cout << "a8 is " << a8 << endl;
cout << "b8 is " << b8 << endl;
cout << "c8 is " << c8 << endl;
cout << "d8 is " << d8 << endl;
cout << "beo is " << beo << endl;
cout << "ga4 is " << ga4 << endl;
cout << "e4 is " << e4 << endl;
cout << "r4 is " << r4 << endl;
cout << "p is " << p << endl;
// Third layer complex permittivity

c8=a8+sqrt(b8*c8);
ga3=(log(c8))/l3;
r3=ga3/(i*beo);
e=pow(r3,2)+p;
cout << "S21 for three layers is " << s21 << endl;

118
Appendix-D
cout << "Permittivity for third layers is " << e << endl;
getch();
return 0;
}
For the calculation of the S-parameters of the four layer case from the given complex
permittivity one can use the following program.
// C++ ADH 2006.
//Program Hwt-r4.CPP
//edited 30-5-06
#include <conio.h>
main()
{
clrscr();
float w,f,e11,e12,l1,e21,e22,l2,e31,e32,l3,e41,e42,l4;
float la,beo,lc,p,lg;
complex ga1,ga2,ga3,ga4,z1,z2,z3,z4,a1,b1,c1,d1,a2,b2,c2,d2;
complex s11,s21;
complex a3,b3,c3,d3,a4,b4,c4,d4,a5,b5,c5,d5;
complex a6,b6,c6,d6,a7,b7,c7,d7;
cout << " Program Hwt-r4 calculates waveguide reflection and" << endl;
cout << " transmission coefficient for 4 layers of dielectric" << endl;

cout << " Enter data requested." << endl;
cout << " Width of waveguide in inches? ";
cin >> w;
cout << " Frequency in Ghz? ";
cin >> f;
cout << " Real part of first layer permitivity? ";
cin >> e11;
cout << " Imaginary part of first layer permitivity? ";
cin >> e12;
cout << " First layer thickness in cm? ";
cin >> l1;
cout << " Real part of second layer permitivity? ";
cin >> e21;
cout << " Imaginary part of second layer permitivity? ";
cin >> e22;
cout << " Second layer thickness in cm? ";
cin >> l2;
cout << " Real part of third layer permitivity? ";
cin >> e31;
cout << " Imaginary part of third layer permitivity? ";
cin >> e32;
cout << " Third layer thickness in cm? ";
cin >> l3;
cout << " Real part of fourth layer permitivity? ";
cin >> e41;
cout << " Imaginary part of fourth layer permitivity? ";
cin >> e42;
cout << " Fourth layer thickness in cm? ";
cin >> l4;

119
Appendix-D
la=2.9979e10/(f*1e9);
beo=2*M_PI/la;
lc=5.08*w;
p=(la/lc)*(la/lc);
lg=la/sqrt(1-p);
complex i (0,1);
z1=la/r1/lg;
z2=la/r2/lg;
z3=la/r3/lg;
z4=la/r4/lg;
ga1=beo*r1*i;
ga2=beo*r2*i;
ga3=beo*r3*i;
ga4=beo*r4*i;
a1=cosh(ga1*l1);
b1=z1*sinh(ga1*l1);
c1=sinh(ga1*l1)/z1;
d1=a1;
a2=cosh(ga2*l2);
b2=z2*sinh(ga2*l2);
c2=sinh(ga2*l2)/z2;
d2=a2;
a3=cosh(ga3*l3);
b3=z3*sinh(ga3*l3);
c3=sinh(ga3*l3)/z3;
d3=a3;
a4=cosh(ga4*l4);
b4=z4*sinh(ga4*l4);
c4=sinh(ga4*l4)/z4;
d4=a4;
a5=a1*a2+b1*c2;
b5=a1*b2+b1*d2;
c5=c1*a2+d1*c2;
d5=c1*b2+d1*d2;
a6=a5*a3+b5*c3;
b6=a5*b3+b5*d3;
c6=c5*a3+d5*c3;
d6=c5*b3+d5*d3;
a7=a6*a4+b6*c4;
b7=a6*b4+b6*d4;
c7=c6*a4+d6*c4;
d7=c6*b4+d6*d4;
s11=(a7+b7-c7-d7)/(a7+b7+c7+d7);
s21=2/(a7+b7+c7+d7);

120
Appendix-D
cout << "ga1 " << ga1 << endl;

cout << "ABCD for 4 different layers from characteristic" << endl;
cout << " matrix using hyperbolic trig functions" << endl;
cout << "A1 is " << a1 << endl;
cout << "B1 is " << b1 << endl;
cout << "C1 is " << c1 << endl;
cout << "D1 is " << d1 << endl;
cout << "A3 is " << a3 << endl;
cout << "B3 is " << b3 << endl;
cout << "C3 is " << c3 << endl;
cout << "D3 is " << d3 << endl;
cout << "A4 is " << a4 << endl;
cout << "B4 is " << b4 << endl;
cout << "C4 is " << c4 << endl;
cout << "D4 is " << d4 << endl;
cout << "S11 for four layers is " << s11 << endl;
cout << "S21 for four layers is " << s21 << endl;
cout << "A7 is " << a7 << endl;
cout << "B7 is " << b7 << endl;
cout << "C7 is " << c7 << endl;
cout << "D7 is " << d7 << endl;
getch();
return 0;
}
For two layer case complex permittivity can be calculated from the S-parameters measured
from VNA the following program can be used
// C++ ADH 2008
// Program Hw2dr.CPP
// edited 30-10-08
#include <conio.h>
// Pgm Hw2dr calculates complex permittivity of second layer from S
// parameters of two layers in a rectangular waveguide
main()
{
clrscr();
double w,f,e11,e12,l1,l2,la,lc,p,lg,beo;
double s21r,s21i,s11r,s11i,s12r,s12i,s22r,s22i;
complex ga1,z1,a1,b1,c1,d1,a2,b2,c2,d2,a3,b3,c3,d3,a4,b4,c4,d4,c5,e;
complex ga2,r2;
//cout << " Width of waveguide in inches? ";
//cin >> w;
//cout << " Frequency in Ghz? ";
//cin >> f;
//cout << " Real part of permittivity of first layer? ";
//cin >> e11;
//cout << " Imaginary part of premittivity of first layer";
//cin >> e12;
//cout << " Thickness of first layer in cm? ";
//cin >> l1;
//cout << " Thickness of second layer in cm? ";
//cin >> l2;
//cout << " Real part of s21? ";
//cin >> s21r;
121
Appendix-D
//cout << " Imaginary part of s21? ";
//cin >> s21i;
//cin >> s11r;
//cin >> s11i;
//cin >> s12r;
//cin >> s12i;
//cin >> s22r;
//cin >> s22i;
w=1.372;
f=6;
e11=2.62;
e12=.02;
l1=.48;
l2=.1;
s21r= .373792;
s21i=-.747427;
s11r=-.471736;
s11i=-.260814;
s12r=.373792;
s12i=-.747427;
s22r=-.496711;
s22i=-.210047;

la=2.9979e10/(f*1e9);
lc=5.08*w;
p=(la/lc)*(la/lc);
lg=la/sqrt(1-p);
beo=2*M_PI/la;
complex i (0,1);
ga1=beo*r1*i;
z1=la/r1/lg;
// First layer characteristic matrix
a1=cosh(ga1*l1);
b1=sinh(ga1*l1)*z1;
c1=sinh(ga1*l1)/z1;
d1=a1;
// Two layer characteristic matrix from S parameters
a2=(1+s11-s22-(s11*s22-s21*s12))/2/s21;
b2=(1+s11+s22+(s11*s22-s21*s12))/2/s21;
c2=(1-s11-s22+(s11*s22-s21*s12))/2/s21;
d2=(1-s11+s22-(s11*s22-s21*s12))/2/s21;
// Inverse characteristic matrix of first layer
a3=d1;
b3=-b1;
c3=-c1;
d3=a1;
//Product of inverse of first and two layer matrices
a4=a3*a2+b3*c2;
b4=a3*b2+b3*d2;
c4=c3*a2+d3*c2;

122
Appendix-D
d4=c3*b2+d3*d2;
// Second layer complex permittivity
c5=a4+sqrt(b4*c4);
ga2=(log(c5))/l2;
r2=ga2/(i*beo);
e=pow(r2,2)+p;
cout << "
" << "\n";
cout << " Program Hw2d
" << "\n";
cout << " Hyperbolic characteristic matrix used to calculate s11 & s21" << "\n";
cout << "
" << "\n";
cout << "
a1=
" << a1 << "\n";
cout << "
b1=
" << b1 << "\n";
cout << "
c1=
" << c1 << "\n";
cout << "
d1=
" << d1 << "\n";
cout << "
" << "\n";
cout << "
a2=
" << a2 << "\n";
cout << "
b2=
" << b2 << "\n";
cout << "
c2=
" << c2 << "\n";
cout << "
d2=
" << d2 << "\n";
cout << "
" << "\n";
cout << "
s21=
" << s21 << "\n";
cout << "
s11=
" << s11 << "\n";
cout << "
s12=
" << s12 << "\n";
cout << "
s22=
" << s22 << "\n";
cout << "
" << "\n";
cout << "
a4=
" << a4 << "\n";
cout << "
b4=
" << b4 << "\n";
cout << "
c4=
" << c4 << "\n";
cout << "
d4=
" << d4 << "\n";
cout << "
" << "\n";
cout << "
e=
" << e << "\n";
cout << "
" << "\n";
getch ();
return 0;
}
Finally the last program is the one which can give the S-parameters for the two layers
problem when complex permittivity is known is as follows.
// C++ ADH 2005
// Program Hw2d.CPP
// edited 3-6-05
#include <conio.h>
main()
{
clrscr();
double w,f,e11,e12,e21,e22,l1,l2,la,lc,p,lg,beo,s21r,s21i,s11r,s11i;
double s22r,s22i,mod21,phi21,mod11,phi11,mod22,phi22,at21,at11,at22;
complex ga1,ga2,z1,z2,a1,b1,c1,d1,a2,b2,c2,d2,a3,b3,c3,d3;
complex a4,b4,c4,d4,s11,s21,s12,s22;
cout << " Width of waveguide in inches? ";
cin >> w;
cout << " Frequency in Ghz? ";
cin >> f;
cout << " Real part of permittivity of first layer? ";
cin >> e11;
cout << " Imaginary part of premittivity of first layer";
cin >> e12;
cout << " Thickness of first layer in cm? ";
123
Appendix-D
cin >> l1;
cout << " Real part of permittivity of second layer? ";
cin >> e21;
cout << " Imaginary part of premittivity of second layer";
cin >> e22;
cout << " Thickness of second layer in cm? ";
cin >> l2;
la=2.9979e10/(f*1e9);
lc=5.08*w;
p=(la/lc)*(la/lc);
lg=la/sqrt(1-p);
beo=2*M_PI/la;
complex i (0,1);
ga1=beo*r1*i;
ga2=beo*r2*i;
z1=la/r1/lg;
z2=la/r2/lg;
a1=cosh(ga1*l1);
b1=sinh(ga1*l1)*z1;
c1=sinh(ga1*l1)/z1;
d1=a1;
a2=cosh(ga2*l2);
b2=sinh(ga2*l2)*z2;
c2=sinh(ga2*l2)/z2;
d2=a2;
//Matrix product for first and second layers
a3=a1*a2+b1*c2;
b3=a1*b2+b1*d2;
c3=c1*a2+d1*c2;
d3=c1*b2+d1*d2;
//Matrix product for second and first layers
a4=a2*a1+b2*c1;
b4=a2*b1+b2*d1;
c4=c2*a1+d2*c1;
d4=c2*b1+d2*d1;
s21=2/(a3+b3+c3+d3);
s11=(a3+b3-c3-d3)/(a3+b3+c3+d3);
s12=2/(a4+b4+c4+d4);
s22=(a4+b4-c4-d4)/(a4+b4+c4+d4);
s21r=real(s21);
s21i=imag(s21);
s11r=real(s11);
s11i=imag(s11);
s22r=real(s22);
s22i=imag(s22);
mod21=sqrt(s21r*s21r+s21i*s21i);
phi21=atan(s21i/s21r)*180/M_PI;
at21=20*log(mod21)/log(10);
if (s21r<0 && s21i<0) phi21=phi21+180;
if (s21r<0 && s21i>0) phi21=phi21+180;

124
Appendix-D
if (s11r<0 && s11i<0) phi11=phi11-180;
if (s11r<0 && s11i>0) phi11=phi11+180;
if (s22r<0 && s22i<0) phi22=phi22-180;
if (s22r<0 && s22i>0) phi22=phi22+180;
cout << "
" << "\n";
cout << " Program Hw2d
" << "\n";
cout << " Hyperbolic characteristic matrix used to calculate s11 & s21" << "\n";
cout << "
" << "\n";
//cout << "
a1=
" << a1 << "\n";
//cout << "
b1=
" << b1 << "\n";
//cout << "
c1=
" << c1 << "\n";
//cout << "
d1=
" << d1 << "\n";
//cout << "
" << "\n";
//cout << "
a2=
" << a2 << "\n";
//cout << "
b2=
" << b2 << "\n";
//cout << "
c2=
" << c2 << "\n";
//cout << "
d2=
" << d2 << "\n";
cout << "
" << "\n";
//cout << "
a3=
" << a3 << "\n";
//cout << "
b3=
" << b3 << "\n";
//cout << "
c3=
" << c3 << "\n";
//cout << "
d3=
" << d3 << "\n";
//cout << "
" << "\n";
//cout << "
a4=
" << a4 << "\n";
//cout << "
b4=
" << b4 << "\n";
//cout << "
c4=
" << c4 << "\n";
//cout << "
d4=
" << d4 << "\n";
cout << "
w=
" << w << "\n";
cout << "
f=
" << f << "\n";
cout << "
e1=
" << e1 << "\n";
cout << "
l1=
" << l1 << "\n";
cout << "
e2=
" << e2 << "\n";
cout << "
l2=
" << l2 << "\n";
cout << "
" << "\n";
cout << "
s21=
" << s21 << "\n";
cout << "
s11=
" << s11 << "\n";
cout << "
s12=
" << s12 << "\n";
cout << "
s22=
" << s22 << "\n";
cout << "
" << "\n";
cout << "
at21=
" << at21 << "\n";
cout << "
mod21=
" << mod21 << "\n";
cout << "
phi21=
" << phi21 << "\n";
cout << "
" << "\n";
cout << "
at11=
" << at11 << "\n";
cout << "
mod11=
" << mod11 << "\n";
cout << "
phi11=
" << phi11 << "\n";
cout << "
" << "\n";
cout << "
at22=
" << at22 << "\n";
cout << "
mod22=
" << mod22 << "\n";
cout << "
phi22=
" << phi22 << "\n";
cout << "
" << "\n";
getch ();
return 0;
}

125
Appendix-E
Appendix-E
Simulation Results
E.1. Slots
Frequency
S-parameters
S11 = 0.374716-j0.382954
S12 = 0.627153+0.556015
6GHz
1.408-j0.0284
S 21 = 0.627153+0.556015
S 22 = 0.326127-j0.425070
S11 = 0.516883-j0.055468
S12 = 0.149394+j0.834900
7 GHz
1.344-j0.0283
S 21 = 0.149394+j0.834900
S 22 = 0.501294-j0.137538
S11 = 0.253918+j0.445632
S12 = -0.699278+j0.487215
8 GHz
1.285-j0.0226
S 21 = -0.699278+j0.487215
S 22 = 0.337531+j0.386141

126
Appendix-E
Rectangular Slots with pitch of 1.7mm, width of 1mm,depth of 1mm

Frequency
S-parameters
S11 = 0.370379-j0.395131
S12 = 0.629711+j0.547388
6GHz
1.613-j0.024
S 21 = 0.629711+j0.547388
S 22 = 0.330542-j0.428992
S11 = 0.520023-j0.068804
S12 = 0.157428+j0.830426
7 GHz
1.55-j0.0365
S 21 = 0.157428+j0.830426
S 22 =0.506428-j0.136612
S11 = 0.268615+j0.439743
S12 = -0.693079+j0.493429
1.487-j0.0189
8 GHz
S 21 = -0.693079+j0.493429
S 22 =0.335013+0.391464

127
Appendix-E

Frequency
S-parameters
S11 = 0.374135-j0.397528
S12 = 0.631979+j0.540407
6GHz
1.784-j0.02219
S 21 = 0.631979+j0.540407
S 22 = 0.325274-j0.438390
S11 = 0.523299-j0.068299
S12 = 0.165384+j0.826827
1.757-j0.0255
7 GHz
S 21 = 0.165384+j0.826827
S 22 = 0.506385-j0.148485
S11 = 0.267729+j0.443575
S12 = -0.685504+j0.500949
8 GHz
1.705-j0.0372
S 21 = -0.685504+j0.500949
S 22 = 0.348438+j0.383381

128
Appendix-E
Rectangular Slots with pitch of 2.0mm, width of 1mm, depth of

1 0.577 mm and with air fill factor (AFF)=0.2887
3
Frequency
S-parameters
S11 = 0.375341-j0.382912
S12 = 0.626859+j0.555938
6GHz
1.681-j0.0357
S 21 = 0.626859+j0.555938
S 22 = 0.32116-j0.425601
S11 = 0.518795-j0.055504
S12 = 0.148912+j0.833788
1.557-j0.0691
7 GHz
S 21 = 0.148912+j0.833788
S 22 = 0.503184-j0.137900
S11 = 0.25303-j0.448214
S12 = -0.699141+j0.485475
1.420-j0.0590
8 GHz
S 21 = -0.699141+j0.485475
S 22 = 0.339092+j0.387235

129
Appendix-E

Frequency
S-parameters
S11 = 0.364746-j0.412189
S12 = 0.632353+j0.535346
6GHz
1.881-j0.038
S 21 = 0.632353+j0.535346
S 22 = 0.337137-j0.435045
S11 = 0.523614-j0.089032
S12 = 0.166972+j0.824307
7 GHz
1.818-j0.0306
S 21 = 0.166972+j0.824307
S 22 = 0.514421-j0.132050
S11 = 0.286903+j0.432808
S12 = -0.685020+j0.500344
1.726-j0.0279
8 GHz
S 21 = -0.685020+j0.500344
S 22 = 0.332356+j0.398902

130
Appendix-E

And with air fill factor (AFF)=0.3333
Frequency
S-parameters
S11 = 0.363320-j0.418343
S12 = 0.633066+j0.530656
6GHz
1.978-j0.0581
S 21 = 0.633066+j0.530656
S 22 = 0.339234-j0.438099
S11 = 0.525068-j0.094506
S12 = 0.170091+j0.822113
7 GHz
1.899-j0.0428
S 21 = 0.170091+j0.822113
S 22 = 0.516936-j0.131876
S11 = 0.292965+j0.429350
S12 = -0.682156+j0.503650
1.828-j0.0137
8 GHz
S 21 = -0.682156+j0.503650
S 22 = 0.331391+j0.400388

131
Appendix-E

Frequency
S-parameters
S11 = 0.359145-j0.426647
S12 = 0.634492+j0.525126
6GHz
2.121-j0.0334
S 21 = 0.634492+j0.525126
S 22 = 0.342744-j0.439915
S11 = 0.526471-j0.102961
S12 = 0.175340+j0.819062
7 GHz
2.041-j0.0463
S 21 = 0.175340+j0.819062
S 22 = 0.519977-j0.131862
S11 = 0.304129+j0.424782
S12 = -0.677436+j0.507230
1.961-j0.0175
8 GHz
S 21 = -0.677436+j0.507230
S 22 = 0.329271+j0.405539

132
Appendix-E

Frequency
S-parameters
S11 = 0.357806-j0.429467
S12 = 0.635089+j0.523009
6GHz
2.177-j0.028
S 21 = 0.635089+j0.523009
S 22 = 0.343640-j0.440861
S11 = 0.526848-0.107242
S12 = 0.177764+j0.817740
7 GHz
2.109-j0.0403
S 21 = 0.177764+j0.817740
S 22 = 0.521328-j0.131430
S11 = 0.307054+j0.424120
S12 = -0.675124+j0.509085
2.021-j0.0329
8 GHz
S 21 = -0.675124+j0.509085
S 22 = 0.330592+j0.405985

133
Appendix-E

Frequency
S-parameters
S11 = 0.358312-j0.430410
S12 = 0.635021+j0.521952
6GHz
2.187-j0.053
S 21 = 0.635021+j0.521952
S 22 = 0.343651-j0.442211
S11 = 0.527382-j0.109243
S12 = 0.177853+j0.817109
7 GHz
2.113-j0.0433
S 21 = 0.177853+j0.817109
S 22 = 0.522607-j0.130108
S11 = 0.307683+j0.424286
S12 = -0.675084+j0.508597
2.012-j0.0403
8 GHz
S 21 = -0.675084+j0.508597
S 22 = 0.330230+j0.406950

134
Appendix-E

Frequency
S-parameters
S11 = 0.367667-j0.405972
S12 = 0.632137+j0.538367
6GHz
1.813-j0.0534
S 21 = 0.632137+j0.538367
S 22 = 0.332997-j0.434857
S11 = 0.523355-j0.081793
S12 = 0.166900+j0.825255
7 GHz
1.788-j0.0598
S 21 = 0.166900+j0.825255
S 22 = 0.511310-j0.138354
S11 = 0.283486+j0.436336
S12 = -0.683020+j0.502030
8 GHz
1.747-j0.0723
S 21 =-0.683020+j0.502030
S 22 = 0.339196+j0.394558

135
Appendix-E

Frequency
S-parameters
S11 = 0.365697-j0.406352
S12 = 0.632433+j0.539126
6GHz
1.823-j0.007
S 21 = 0.632433+j0.539126
S 22 = 0.334183-j0.432632
S11 = 0.520817-j0.083507
S12 = 0.166840+j0.826098
1.801-j0.0079
7 GHz
S 21 = 0.166840+j0.826098
S 22 = 0.482280-j0.215297
S11 = 0.215181+j0.432676
S12 = -0.68397+j0.502999
8 GHz
1.776-j0.0171
S 21 = -0.68397+j0.502999
S 22 = 0.335349+j0.395030

136
Appendix-E

Frequency
S-parameters
S11 = 0.365029-j0.412385
S12 = 0.633493+j0.533647
6GHz
1.933-j0.0485
S 21 = 0.633493+j0.533647
S 22 = 0.335120-j0.437031
S11 = 0.524494-j0.0880937
S12 = 0.171138+j0.822902
1.906-j0.0656
7 GHz
S 21 = 0.171138+j0.822902
S 22 = 0.513794-j0.137864
S11 = 0.290523+j0.432502
S12 = -0.679458+j0.506085
8 GHz
1.876-j0.0611
S 21 = -0.679458+j0.506085
S 22 = 0.338506+j0.396050

137
Appendix-E

Frequency
S-parameters
S11 = 0.362259-j0.419085
S12 = 0.634595+j0.528965
6GHz
2.048-j0.0431
S 21 = 0.634595+j0.528965
S 22 = 0.337723-j0.439085
S11 = 0.525398-j0.096676
S12 = 0.175176+j0.820577
7 GHz
2.022-j0.0516
S 21 = 0.175176+j0.820577
S 22 = 0.516453-j0.136594
S11 = 0.297853+j0.429356
S12 = -0.675665+j0.509517
8 GHz
1.993-j0.0656
S 21 = -0.675665+j0.509517
S 22 = 0.338176+j0.398349

138
Appendix-E

Frequency
S-parameters
S11 = 0.360482-j0.423804
S12 = 0.635283+j0.525564
6GHz
2.129-j0.0451
S 21 = 0.635283+j0.525564
S 22 = 0.33948-j0.440798
S11 = 0.526363-j0.101775
S12 = 0.177937+j0.818734
2.100-j0.0562
7 GHz
S 21 = 0.177937+j0.818734
S 22 = 0.518522-j0.136161
S11 = 0.303188+j0.426120
S12 = -0.673648+j0.511722
8 GHz
2.073-j0.0495
S 21 = -0.673648+j0.511722
S 22 = 0.336446+j0.400354

139
Appendix-E

Frequency
S-parameters
S11 = 0.358204-j0.428985
S12 = 0.636173+j0.521809
6GHz
2.224-j0.0399
S 21 = 0.636173+j0.521809
S 22 = 0.341345-j0.44251
S11 = 0.526808-j0.108169
S12 = 0.181264+j0.816878
2.12-j0.0443
7 GHz
S 21 = 0.181264+j0.816878
S 22 = 0.520547-j0.135077
S11 = 0.309119+j0.423399
S12 = -0.670666+j0.514304
8 GHz
2.166-j0.0511
S 21 = -0.670666+j0.514304
S 22 = 0.335945+j0.402421

140
Appendix-E

Frequency
S-parameters
S11 = 0.356743-j0.432544
S12 = 0.636681-j0.519233
6GHz
2.286-j0.0395
S 21 = 0.636681-j0.519233
S 22 = 0.342665-j0.443775
S11 = 0.527240-j0.112274
S12 = 0.183403+j0.815556
7 GHz
2.263-j0.0408
S 21 = 0.183403+j0.815556
S 22 = 0.521999-0.134511
S11 = 0.313081+j0.421305
S12 = -0.668841+j0.515974
8 GHz
2.227-j0.0469
S 21 = -0.668841+j0.515974
S 22 = 0.335248+j0.403874

141
Appendix-E

Frequency
S-parameters
S11 = 0.369396-j0.403525
S12 = 0.629978+j0.541552
6GHz
1.711-j0.0679
S 21 = 0.629978+j0.541552
S 22 = 0.334270-j0.433061
S11 = 0.523999-j0.076942
S12 = 0.160645+j0.826560
7 GHz
1.636-j0.0839
S 21 = 0.160645+j0.826560
S 22 = 0.512028-j0.135305
S11 = 0.278157-j0.438672
S12 = -0.689202+j0.494470
8 GHz
1.559-j0.0627
S 21 = -0.689202+j0.494470
S 22 = 0.333914+j0.397819

142
Appendix-E

Frequency
S-parameters
S11 = 0.364806-j0.409212
S12 = 0.631311+j0.537125
6GHz
1.817-j0.0695
S 21 = 0.631311+j0.537125
S 22 = 0.335848-j0.435375
S11 = 0.525134-j0.083385
S12 = 0.164279+j0.824475
7 GHz
1.732-j0.0851
S 21 = 0.164279+j0.824475
S 22 = 0.514380-j0.134622
S11 = 0.283723+j0.436248
S12 = -0.686813+j0.496712
8 GHz
1.633-j0.0617
S 21 = -0.686813+j0.496712
S 22 = 0.332901+j0.399967

143
Appendix-E

Frequency
S-parameters
S11 = 0.365496-j0.412889
S12 = 0.632045+j0.534648
6GHz
1.882-j0.0599
S 21 = 0.632045+j0.534648
S 22 = 0.337322-j0.436204
S11 = 0.525730-j0.087604
S12 = 0.167606+j0.822972
1.816-j0.0855
7 GHz
S 21 = 0.167606+j0.822972
S 22 = 0.515495-j0.135350
S11 = 0.289215+j0.434575
S12 = -0.684122+j0.498725
8 GHz
1.702-j0.0732
S 21 = -0.684122+j0.498725
S 22 = 0.332671+j0.402243

144
Appendix-E

Frequency
S-parameters
S11 = 0.363032-j0.418909
S12 = 0.633095+j0.530368
6GHz
1.985-j0.0561
S 21 = 0.633095+j0.530368
S 22 = 0.339562-j0.438135
S11 = 0.526158-j0.095520
S12 = 0.171015+j0.821103
1.918-j0.0647
7 GHz
S 21 = 0.633095+j0.530368
S 22 = 0.517984-j0.132813
S11 = 0.294377+j0.433632
S12 = -0.679746+j0.502438
8 GHz
1.811-j0.103
S 21 = -0.679746+j0.502438
S 22 = 0.335550+j0.402608

145
Appendix-E

Frequency
S-parameters
S11 = 0.359869-j0.426909
S12 = 0.634095+j0.524897
6GHz
2.109-j0.0548
S 21 = 0.634095+j0.524897
S 22 = 0.342920-j0.440619
S11 = 0.528418-j0.101648
S12 = 0.174708+j0.818108
2.011-j0.097
7 GHz
S 21 = 0.174708+j0.818108
S 22 = 0.521324-j0.133367
S11 = 0.304502+j0.425616
S12 = -0.677402+j0.506343
8 GHz
1.942-j0.0349
S 21 = -0.677402+j0.506343
S 22 = 0.329357+j0.406650

146
Appendix-E

Frequency
S-parameters
S11 = 0.358079-j0.431429
S12 = 0.635092+j0.521190
6GHz
2.202-j0.0577
S 21 = 0.635092+j0.521190
S 22 = 0.344000-j0.442726
S11 = 0.527947-j0.108369
S12 = 0.178780+j0.816654
2.131-j0.0643
7 GHz
S 21 = 0.178780+j0.816654
S 22 = 0.522427-j0.132414
S11 = 0.308680+j0.423081
S12 = -0.674319+j0.510013
8 GHz
2.05-j0.0277
S 21 = -0.674319+j0.510013
S 22 = 0.330363+j0.406328

147
Appendix-E

Frequency
S-parameters
S11 = 0.357270-j0.434190
S12 = 0.635619+j0.518783
6GHz
2.257-j0.0685
S 21 = 0.635619+j0.518783
S 22 = 0.344521+j0.444383
S11 = 0.527620-j0.114132
S12 = 0.180668+j0.815663
2.194-j0.0325
7 GHz
S 21 = 0.180668+j0.815663
S 22 = 0.523994-j0.129638
S11 = 0.311957+j0.422077
S12 = -0.671997+j0.511868
8 GHz
2.112-j0.0407
S 21 = -0.671997+j0.511868
S 22 = 0.331341+j0.407038

148
Appendix-E

Frequency
S-parameters
S11 = 0.367420-j0.409589
S12 = 0.631467+j0.536558
6GHz
1.828-j0.0770
S 21 = 0.631467+j0.536558
S 22 = 0.335637-j0.436013
S11 = 0.525511-j0.083609
S12 = 0.165063+j0.824064
7 GHz
1.747-j0.0935
S 21 = 0.165063+j0.824064
S 22 = 0.514529-j0.135599
S11 = 0.283865+j0.437095
S12 = -0.684897+j0.498528
8 GHz
1.673-j0.0820
S 21 = -0.684897+j0.498528
S 22 = 0.336120+j0.398287

149
Appendix-E

Frequency
S-parameters
S11 = 0.635262-j0.414230
S12 = 0.632026+j0.533795
6GHz
1.895-j0.066
S 21 = 0.632026+j0.533795
S 22 = 0.338015-j0.436731
S11 = 0.526372-j0.088962
S12 = 0.167150+j0.822519
7 GHz
1.808-j0.0916
S 21 = 0.167150+j0.822519
S 22 = 0.516758-j0.133889
S11 = 0.289941+j0.434090
S12 = -0.682445+j0.500973
8 GHz
1.756-j0.0754
S 21 = -0.682445+j0.500973
S 22 = 0.334691+j0.400576

150
Appendix-E

Frequency
S-parameters
S11 = 0.363518-j0.417955
S12 = 0.633006+j0.530898
6GHz
1.972-j0.0595
S 21 = 0.633006+j0.530898
S 22 = 0.339018-j0.438050
S11 = 0.52621-j0.093530
S12 = 0.169912+j0.821274
7 GHz
1.884-j0.0819
S 21 = 0.169912+j0.821274
S 22 = 0.517943-j0.133428
S11 = 0.294666+j0.432078
S12 = -0.680020+j0.503224
1.829-j0.0778
8 GHz
S 21 = -0.680020+j0.503224
S 22 = 0.334463+j0.402057

151
Appendix-E

Frequency
S-parameters
S11 = 0.361441-j0.423583
S12 = 0.633879+j0.526781
6GHz
2.067-j0.063
S 21 = 0.633879+j0.526781
S 22 = 0.341027-j0.440175
S11 = 0.527081-j0.099925
S12 = 0.527081-j0.099925
7 GHz
2.011-j0.0737
S 21 = 0.174612+j0.819213
S 22 = 0.519452-j0.134007
S11 = 0.300864+j0.428294
S12 = -0.677539+j0.506117
1.924-j0.0589
8 GHz
S 21 = -0.677539+j0.506117
S 22 = 0.332688+j0.404044

152
Appendix-E

Frequency
S-parameters
S11 = 0.360086-j0.427353
S12 = 0.634041+j0.524450
6GHz
2.113-j0.0654
S 21 = 0.634041+j0.524450
S 22 = 0.342991-j0.441183
S11 = 0.527427-0.104399
S12 = 0.175327+j0.818269
7 GHz
2.039-j0.0616
S 21 = 0.175327+j0.818269
S 22 = 0.521403-j0.131176
S11 = 0.303823+j0.426306
S12 = -0.676758+j0.507011
1.957-j0.0458
8 GHz
S 21 = -0.676758+j0.507011
S 22 = 0.331109+j0.405477

153
Appendix-E

Frequency
S-parameters
S11 = 0.358940-j0.429828
S12 = 0.634804+j0.522273
6GHz
2.191-j0.0834
S 21 = 0.634804+j0.522273
S 22 = 0.343343-j0.442382
S11 = 0.528112-j0.107683
S12 = 0.177334+j0.816968
7 GHz
2.092-j0.0671
S 21 = 0.177334+j0.816968
S 22 = 0.522742-j0.131252
S11 = 0.307550+j0.424648
S12 = -0.674566+j0.509074
2.023-j0.0479
8 GHz
S 21 = -0.674566+j0.509074
S 22 = 0.331331+j0.406342

154
Appendix-E
Figure-E-1:- Plot of S-parameters for the case of slots with

1.4mm pitch
Figure-E-2:- Plot of the phase of S-parameters for the case

of slots with 1.4mm pitch

1.7mm pitch


2.5mm pitch


3.00mm pitch


155
Appendix-E

4.00mm pitch


4.5mm pitch

Figure-E-13:- Plot of S-parameters for the case of slots

with 5.0mm pitch
Figure-E-14:- Plot of the phase S-parameters for the case

Figure-E-15:- Plot of S-parameters for the case of 60 degree

grooves slots with 1.2mm pitch
Figure-E-16:- Plot of phase of S-parameters for the case of

60 degree grooves slots with 1.2mm pitch

156
Appendix-E









157
Appendix-E









158
Appendix-E
Figure-E-33:- Plot of S-parameters for the case of 120

degree grooves slots with 4.5mm pitch








159
Appendix-F (Experimental Results)
Appendix-F
Experimental Results
F.1. Slots
3 = 1.732 ,
depth of 1mm and with air fill factor (AFF)=0.4330 (without end problems)
Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.218
-152.92
S12
-1.5933
-63.676
S 21
-1.588
-63.842
S 22
-5.2422
-155.8
S11
-5.5466
-162.23
S12
-1.4592
-73.449
6GHz
1.741-j0.0338
1.812-j0.0804
7GHz
S 21
-1.4592
-73.633
S 22
-5.5403
-165.83
S11
-5.7717
-171.48
S12
-1.3759
-83.664
S 21
-1.3724
-83.82
S 22
-5.761
-176.91
8GHz
1.920-j0.0975

160
3 = 1.732 ,
depth of 1mm and with air fill factor (AFF)=0.4330 (with end problems)
Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.2361
-152.51
S12
-1.591
-63.535
6GHz
1.680-j0.0144
S 21
-1.5876
-63.67
S 22
-5.262
-155.91
S11
-5.5671
-161.69
S12
-1.4584
-73.301
7GHz
1.748-j0.07
S 21
-1.4583
-73.437
S 22
-5.5627
-166.01
S11
-5.782
-170.88
S12
-1.3785
-83.535
8GHz
1.864-j0.0964
S 21
-1.3726
-83.641
S 22
-5.78
-177.19

161

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.6997
-172.41
S12
-1.4072
-84.48
6GHz
2.220+j0.0393
S 21
-1.4092
-84.488
S 22
-5.7114
-177.34
S11
-5.4629
-162.77
S12
-1.5028
-74.484
S 21
-1.5065
-74.559
S 22
-5.4663
-167.26
S11
-5.137
-153.63
S12
-1.6385
-65.086
7GHz
2.142-j0.0040
2.165-j0.0583
8GHz
S 21
-1.6411
-65.113
S 22
-5.1274
-157.66

162

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.1182
-154.35
S12
-1.6487
-65.25
6GHz
2.315+j0.0383
S 21
-1.6489
-65.285
S 22
-5.1116
-157.27
S11
-5.4507
-163.7
S12
-1.5072
-74.668
S 21
-1.5106
-74.73
S 22
-5.4546
-166.66
S11
-5.7
-173.52
S12
-1.4095
-84.641
7GHz
2.236-j0.0694
2.244-j0.1150
8GHz
S 21
-1.4094
-84.652
S 22
-5.71
-176.53

163

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.0477
-154.58
S12
-1.6859
-65.707
6GHz
2.463+j0.0626
S 21
-1.6861
-65.73
S 22
-5.033
-157.93
S11
-5.3899
-163.75
S12
-1.5396
-75.074
S 21
-1.5417
-75.145
S 22
-5.3843
-167.41
S11
-5.6499
-173.56
S12
-1.4303
-85.102
7GHz
2.4-j0.0408
2.379-j0.0371
8GHz
S 21
-1.4323
-85.105
S 22
-5.6582
-177.41

164
F.2. 60 Degree Grooves

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.3819
-151.39
S12
-1.5170
-62.648
S 21
-1.5125
-62.795
S 22
-5.3818
-155.23
S11
-5.6250
-160.12
S12
-1.4140
-72.301
1.408-j0.516
6GHz
1.441-j0.0206
7GHz
S 21
-1.4130
-72.473
S 22
-5.6311
-165.7
S11
-5.8154
-169.07
S12
-1.3377
-82.395
S 21
-1.3375
-82.531
S 22
-5.8389
-176.73
8GHz
1.517-j0.0645

165

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.2883
-151.7
S12
-1.5535
-63.939
6GHz
1.778+j0.06
S 21
-1.5530
-63.967
S 22
-5.2747
-157.3
S11
-5.5640
-160.38
S12
-1.4379
-73.258
S 21
-1.4366
-73.32
S 22
-5.5649
-167.21
S11
-5.6890
-169.690
S12
-1.3252
-83.242
7GHz
1.694+j0.0467
1.749+j0.1222
8GHz
S 21
-1.3239
-83.266
S 22
-5.6753
-177.871

166

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.1571
-153.13
S12
-1.6230
-64.152
S 21
-1.6188
-64.309
S 22
-5.1416
-156.45
S11
-5.4641
-161.94
S12
-1.4903
-73.832
6GHz
1.855+j0.0555
7GHz
1.892+j0.0584
S 21
-1.4882
-73.988
S 22
-5.4573
-166.84
S11
-5.7288
-171.05
S12
-1.3763
-84.012
S 21
-1.3763
-84.168
S 22
-5.7427
-177.95
8GHz
1.997-j0.0258

167

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.1453
-153.75
S12
-1.6451
-64.238
S 21
-1.6411
-64.383
S 22
-5.1111
-155.93
S11
-5.4653
-162.91
S12
-1.4992
-73.945
6GHz
1.872-j0.0127
7GHz
1.956-j0.0092
S 21
-1.4983
-74.113
S 22
-5.4348
-166.15
S11
-5.7085
-172.26
S12
-1.3835
-84.164
S 21
-1.3829
-84.312
S 22
-5.7295
-177.02
8GHz
2.079-j0.0595

168

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.1653
-152.98
S12
-1.6165
-64.262
1.900+j0.0595
6GHz
S 21
-1.6141
-64.406
S 22
-5.1631
-156.79
S11
-5.387
-161.548
S12
-1.50
-75.341
S 21
-1.507
-75.483
S 22
-5.405
-166.812
S11
-5.6709
-171.04
S12
-1.4066
-84.125
7GHz
2.002+j0.0431
8GHz
2.015+j0.0517
S 21
-1.4055
-84.281
S 22
-5.6709
-178.27

169

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.1797
-153.66
S12
-1.6005
-64.59
S 21
-1.599
-64.625
S 22
-5.1702
-156.63
S11
-5.498
-162.76
S12
-1.4626
-73.902
6GHz
2.067-j0.0311
7GHz
1.972-j0.0467
S 21
-1.4633
-73.988
S 22
-5.502
-166.11
S11
-5.6782
-172.46
S12
-1.3245
-83.891
S 21
-1.3257
-83.934
S 22
-5.6721
-176.38
8GHz
2.027+j0.0347

170

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.0073
-154.69
S12
-1.69
-65.582
S 21
-1.6902
-65.621
S 22
-4.998
-157.85
S11
-5.3357
-163.7
S12
-1.5392
-74.863
6GHz
2.436+j0.1467
7GHz
2.296+j0.1289
S 21
-1.5383
-74.941
S 22
-5.3442
-167.34
S11
-5.5396
-173.38
S12
-1.387
-84.883
S 21
-1.386
-84.93
S 22
-5.5396
-177.65
8GHz
2.336+j0.1985

171

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.0298
-155.16
S12
-1.6674
-65.598
S 21
-1.6658
-65.629
S 22
-5.02
-157.14
S11
-5.3591
-164.38
S12
-1.5173
-74.902
6GHz
2.462+j0.0196
7GHz
2.321+j0.0219
S 21
-1.5164
-74.977
S 22
-5.3674
-166.45
S11
-5.5649
-174.27
S12
-1.3668
-84.937
S 21
-1.3668
-84.969
S 22
-5.5693
-176.64
8GHz
2.371+j0.1155

172

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.2612
-151.54
S12
-1.5921
-63.236
1.536+j0.05
6GHz
S 21
-1.5891
-63.291
S 22
-5.2834
-156.19
S11
-5.5696
-160.49
S12
-1.4684
-72.969
S 21
-1.4697
-73.039
S 22
-5.5625
-166.45
S11
-5.7478
-169.5
S12
-1.399
-83.141
7GHz
1.593+j0.0044
8GHz
1.690-j0.014
S 21
-1.3992
-83.164
S 22
-5.7485
-177.63

173

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.2388
-152.07
S12
-1.5885
-63.883
S 21
-1.5868
-64.004
S 22
-5.2422
-156.92
S11
-5.5247
-160.74
S12
-1.469
-73.59
6GHz
1.756+j0.053
7GHz
1.788+j0.0615
S 21
-1.469
-73.734
S 22
-5.5291
-167.56
S11
-5.7039
-169.81
S12
-1.4003
-83.785
S 21
-1.3981
-83.883
S 22
-5.7061
-178.79
8GHz
1.878+j0.0483

174

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.2122
-153.16
S12
-1.5855
-64.395
S 21
-1.5851
-64.445
S 22
-5.2017
-156.77
S11
-5.5088
-162.13
S12
-1.4572
-73.691
6GHz
1.987-j0.0119
7GHz
8GHz
1.889-j0.0081
S 21
-1.4583
-73.777
S 22
-5.5125
-166.37
S11
-5.656
-171.73
S12
-1.33
-83.645
S 21
-1.33
-83.684
S 22
-5.6531
-176.68
1.934+j0.0885

175

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.0686
-154.24
S12
-1.6663
-65.156
S 21
-1.665
-65.199
S 22
-5.0603
-157.5
S11
-5.3828
-163.22
S12
-1.5223
-74.43
6GHz
7GHz
2.278+j0.0898
2.149+j0.0923
S 21
-1.5229
-74.52
S 22
-5.3882
-167.03
S11
-5.5615
-172.87
S12
-1.3824
-84.418
S 21
-1.3822
-84.461
S 22
-5.554
-177.31
8GHz
2.185+j0.18

176

Frequency
S-parameters(dB)
Phase(Degrees)
S11
-5.0688
-154.24
S12
-1.6652
-65.176
S 21
-1.6645
-65.227
S 22
-5.062
-157.53
S11
-5.3877
-163.26
S12
-1.519
-74.461
6GHz
2.286+j0.0889
7GHz
2.165+j0.0791
S 21
-1.5192
-74.555
S 22
-5.3984
-167.04
S11
-5.5742
-172.89
S12
-1.3748
-84.445
S 21
-1.3757
-84.492
S 22
-5.572
-177.3
8GHz
2.196+j0.1613

177
Excel Plots Directly Taken From VNA for Different Samples

Material Properties
Material Properties
2.5
2.5
Er Re
Er Im
Er Re
Er Im
2.0
Real/Imaginary Er
Real/Imaginary Er
2.0
1.5
1.0
1.5
1.0
0.5
0.5
0.0
0.0
6000
6200
6400
6600
6800
7000
7200
7400
7600
7800
-0.5
6000
8000
Frequency (MHz)
6200
6400
6600
6800
7000
7200
7400
7600
7800
8000
Frequency (MHz)
Figure-F.1. Plot of experimentally measured

complex permittivity for the case of slots with
4.00mm pitch.
Figure-F.2. Plot of experimentally measured complex

permittivity for the case of slots with 4.50mm pitch.
Material Properties
Material Properties
1.8
2.5
Er Re
Er Re
1.6
Er Im
Er Im
1.4
Real/Imaginary Er
Real/Imaginary Er
2.0
1.5
1.0
1.2
1.0
0.8
0.6
0.4
0.5
0.2
0.0
6000
6200
6400
6600
6800
7000
7200
7400
7600
7800
0.0
6000
8000
6200
6400
6600
6800
7000
7200
7400
7600
7800
8000
Frequency (MHz)
Frequency (MHz)

complex permittivity for the case of slots with 5.0mm
pitch.

permittivity for the case of Grooves with angle of 60
Degrees and of pitch of 1.2mm.
Material Properties
Material Properties
2.5
2.0
Er Re
Er Re
1.8
Er Im
Er Im
2.0
1.6
Real/Imaginary Er
Real/Imaginary Er
1.4
1.2
1.0
0.8
1.5
1.0
0.6
0.5
0.4
0.2
0.0
6000
6200
6400
6600
6800
7000
7200
7400
7600
7800
0.0
6000
8000
6200
6400
6600
6800
7000
7200
7400
7600
7800

complex permittivity for the case of Grooves with
angle of 60 Degrees and of pitch of 1.3mm.

Degrees and of pitch of 2.5mm.
Material Properties
Material Properties
2.5
2.5
Er Re
Er Re
Er Im
Er Im
2.0
Real/Imaginary Er
Real/Imaginary Er
2.0
1.5
1.0
0.5
0.0
6000
8000
Frequency (MHz)
Frequency (MHz)
1.5
1.0
0.5
6200
6400
6600
6800
7000
7200
7400
7600
7800
8000
0.0
6000
Frequency (MHz)

angle of 60 Degrees and of pitch of 3.0mm
6200
6400
6600
6800
7000
7200
7400
7600
7800
8000
Frequency (MHz)

Degrees and of pitch of 3.0mm

178
Material Properties
Material Properties
2.5
2.5
Er Re
Er Re
Er Im
Er Im
2.0
Real/Imaginary Er
Real/Imaginary Er
2.0
1.5
1.0
1.0
0.5
0.5
0.0
6000
1.5
6200
6400
6600
6800
7000
7200
7400
7600
7800
0.0
6000
8000
6200
6400
6600
6800
7000
7200
7400
7600
7800
8000
Frequency (MHz)
Frequency (MHz)


Material Properties
Material Properties
2.5
2.0
Er Re
Er Re
1.8
Er Im
Er Im
2.0
1.6
Real/Imaginary Er
Real/Imaginary Er
1.4
1.5
1.0
1.2
1.0
0.8
0.6
0.5
0.4
0.2
0.0
6000
6200
6400
6600
6800
7000
7200
7400
7600
7800
0.0
6000
8000
6200
6400
6600
6800
Frequency (MHz)
7000
7200
7400
7600
7800


Material Properties
Material Properties
2.0
2.5
Er Re
Er Re
Er Im
Er Im
2.0
Real/Imaginary Er
Real/Imaginary Er
1.5
1.0
0.5
0.0
-0.5
6000
1.5
1.0
0.5
6200
6400
6600
6800
7000
7200
7400
7600
7800
0.0
6000
8000
6200
6400
6600
6800
Frequency (MHz)
7000
7200
7400
7600
7800

Material Properties
Material Properties
2.5
2.5
Er Re
Er Re
Er Im
Er Im
2.0
2.0
Real/Imaginary Er
Real/Imaginary Er
8000
Frequency (MHz)

1.5
1.0
0.5
0.0
6000
8000
Frequency (MHz)
1.5
1.0
0.5
6200
6400
6600
6800
7000
7200
7400
7600
7800
8000
0.0
6000
Frequency (MHz)

6200
6400
6600
6800
7000
7200
7400
7600
7800
8000
Frequency (MHz)


179
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SECOND EDITION
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PROPRIETA
TEST
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PERSPEX GS
CAST SHEET
PERSPEX GS IM
CAST SHEET
PERSPEX XT
EXTRUDED
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000/0000
0M14
0X00
IM50
IM60
PERSPEX XT IM
IMPACT MODIFIED EXTRUDED SHEET
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Allgemeine
Generali
Relative Density
Masse Volumique
Dichtezahl
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ISO 1183
1.19
1.18
1.19
1.17
1.16
Rockwell Hardness
Duret Rockwell
Rockwell-Hrte
Durezza Rockwell
ISO 2039-2
M Scale
102
98.5
101
65
45
Ball Indentation
Duret la Bille
Kugeldruckhrte
Durezza alla CompresISO 2039-1
MPa
Hardness
sione con Sfera
Water Absorption
Absorption dEau
Wasseraufnahme
Assorbimento dacqua
ISO 62
0.2
0.4
0.2
0.3
0.3
Flammability
Inflammabilit
Brandverhalten
Infiammabilit
DIN 4102
B2
B2
B2
B2
B2
UL 94
HB
HB
HB
HB
HB
BS 476, Pt 7
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NFP 92 - 307
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Mcaniques
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Meccaniche
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Rsistance la Traction
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Elongation at Break
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Flexural Strength
Rsistance la Flexion
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Charpy Impact Strength
Rsistance au Choc
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Rsistance au Choc
Charpy
Schlagzhigkeit nach
allurto
Izod
Thermal
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Thermische
Termiche
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Indice de Rfraction
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Electrical
Electriques
Elektrische
Elettriche
Surface Resistivity
Rsistance Surfacique
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75
62
70
68
50
ISO 527 (a)
18
25
ISO 178 (b)
MPa
116
105
107
90
70
ISO 178 (b)
MPa
3210
2960
3030
2500
2000
ISO 179 (c)
kJ.m -2
12
21.7
10
50
65
ISO 179 (d)
kJ.m -2
1.2
ISO 180/1A (d)
kJ.m -2
ISO 306A
>110
>110
>105
>105
>105
ASTM D696
x 10 -5. K-1
7.7
7.8
ASTM D1003
% (e)
>92
>92
>92
90
89
ISO 489/A
1.49
1.49
IEC 93
.m -2
>10 14
>10 14
IEC 243
kV. mm -1
15
Coefficiente di
Optical
Electrical Strength
MPa
Resistenza Izod
Izod
sement Vicat
ISO 527 (a)
Resistenza alla
Flessione
Charpy
M4 (with drips)
a = 5 mm/min
b = 2 mm/min
c = un-notched/sans encoche/ungekerbt/senza intaglio

d = notched/encoch/gekerbt/con intaglio
e = in/en/bei/in 3 mm
Appendix-H
Appendix-H
Here two snapshot which are the out put results of the 4 layers program mentioned in
appendixD. Its inputs are complex permittivities and the physical lengths of all the layers
and output as the S-parameters. This program is first run as -0.05 as the imaginary part of
complex permittivity of the profiled layer and the second time as +0.05 as the imaginary part.
The output S-parameters are compared and found that they are very close to each other and
the difference lies with in the calibration limits of the VNA used. The outs are here

182
Appendix-H

183
Appendix-I
Appendix-I
Feasibility Report

184
Calculation of the general formula for Complex Permittivity of the

mixture of two or more dielectric mediums using Electromagnetic
Wave Scattering from the periodic discontinuities in a waveguide
[Feasibility Study Report]
Supervisors: Prof Andrew Gibson

Dr. Arther. D. Haigh
Prepared For:
Faculty of Engineering and Physical Sciences
School of Electrical and Electronics Engineering
MSc. Communication System Engineering (2008-09)
Prepared By:
Omer FAROOQ.
Student ID: 7367100
Date of Submission
15th May, 2009
Abbreviations
Abbreviations
2D
Two Dimensional
3D
Three Dimensional
DC
Direct Current
EM
Electromagnetic
EWS
Electromagnetic Wave Scattering
FDTD
Finite Difference Time Domain
FEM
Finite Element Method
GTD
Geometrical Theory of Diffraction
HM
Hybrid Mode
HFSS
High Frequency Structure Simulator
MACS
Microwave And Communication Systems
MMIC
Monolithic Microwave Integrated Circuit
PAT
Portable Appliance Test
RT
Ray Tracing
S-Parameters
Scattering Parameters
SSB
Sackvile Street Building.
SWR
Standing Wave Ratio
TE
Transverse Electric mode
TEM
Transverse Electromagnetic mode
TM
Transverse Magnetic mode
VDU
Visual Display Unit
VNA
Vector Network Analyser
VSWR
Voltage Standing Wave Ratio

Abstract
Abstract
There are many occasions in the field of applied science and engineering when it is very
important to measure the complex permittivity of the medium under test. For example the
frequencies of the house hold microwave used to heat the food is set equal to approximately
2.3 to 2.4 GHz and the corresponding wavelengths are 13 to 12.5cm considering in mind that
at this frequency the imaginary part of the complex permittivity of water is very high hence
there is lot of electrical energy is being converted in to heat energy in water at this frequency.
As almost all the food contents contain water so it is the way adopted to heat the food stuff.
Also to dry the wheat grain using microwave technique shows the importance of the
measurement of complex permittivity.
When wave guide cell are used to measure the complex permittivity of the wheat grain then
one by definition prepare the bulk sample having irregular interface plane. This interface
causes difficulties in measuring the complex permittivity. In order to understand the
phenomenon this project will design, fabricate, test and model a range of periodic
discontinuous surfaces around a wave guide cell with the intention of measuring S-parameters
of such interfaces.
The approach taken will be to fabricate the samples and use the available test equipment in
MACS material measurement laboratory. Samples will be loaded into the wave guide, Sparameter will be measured using VNA and complex permittivity will be extracted using the
available software technique. For completeness the 3-D problem can be modelled using a
commercial software HFSS.
Separately ray tracing technique will be applied in order to gain the deeper understanding of
the electromagnetic phenomenon occurring at such periodic surfaces.
The outcomes of the project should include a model or method for estimating the complex
permittivity of periodic interface surfaces and fundamental knowledge about the effect of the
relative filling factor and shape of the interface.

ii
Table of Contents
Table of Contents
Section
Page Number
Abbreviationsi
Abstract.ii
1. Introduction.........................................................................................1
2. Aims and Objectives of the project...2
2.1. Aim of the Project.........2
2.2. Objectives of the Project...........3
3. Experimental plane.....4
4. Literature review.....6
4.1. Complex permittivity....6
4.1.1. Effect of electric field on materials...6
4.1.2. Polarized material in time dependent electric field...7
4.2. Plane wave solutions ....8
4.2.1. Maxwells Equations.8
4.2.2. Source of Electromagnetic field9
4.2.3. Constitutive relations and parameters9
4.2.4. Helmholtz Equation...9
4.2.5. Plane wave in loss- less medium.....10
4.2.6. Plane wave in a general lossy medium....10
4.3. Plane wave reflection from a single media interface..12
4.4. Oblique incidence at a dielectric interface..13
4.4.1. Parallel Polarization.14
4.4.2. Perpendicular Polarization...15
4.5. Plane wave reflection from multiple interface....15
iii
Table of Contents
4.6. Waveguides.16
4.7. Rectangular waveguide.......16
4.8. Scattering by Conducting Wedge....18
4.9. Maxwell-Garnett Mixing Theory....19
5. Methodology .....21
5.1. Electromagnetic wave scattering.....21
5.2. Ray Tracing..21
5.3. Modelling using HFSS.....22
5.4. Experimental work 22
5.4.1. Vector Network Analyser....23
5.4.2. Steps Involves in this method..23
6. Project Planning................................................................................25
6.1. Gantt Chart ..25
6.2. Detail Description of Project Planning...26
7. Reference............................................................................................28
Appendix A Calibration of VNA..............................................................................I

Appendix B Experimental Results.III
Appendix C Risk Assessment.VIII

iv
Table of Contents
1. Introduction:-
This project deals with the formulation of the electrical properties (particularly complex permittivity)
of the non-homogeneous mixture of dielectrics having the periodic and regular discontinuities placed
in the rectangular wave guide in particular and has the plan to expand this to other shapes of the wave
guides as well.
The techniques followed will be firstly Electromagnetic Wave scattering which involves the
electromagnetic wave theory to describe the scattering of electromagnetic waves from the periodic
discontinuities of the mixtures of dielectrics. This project will require the basic concepts of Maxwells
Equations, electromagnetics and complete understanding of the mathematics used in the area of
Scattering of Electromagnetic waves particularly from the regular shaped objects like, Scattering by
Circular Cylinder, Scattering by conducting Wedge and Scattering by Conducting Sphere. The
mathematical concepts involve complex numbers, partial differential equations, Special functions as
Bessel, Beta and Gamma functions, Fourier and Hankel transforms, Gausses, Stokes and Greens
theorem, plane wave propagation and different modes of transmission of electromagnetic waves in
different wave guides.
Secondly, the work is at immature level on the Ray Tracing methodology at the time of
submission of this report, for the calculation of complex permittivity of the medium. Finally the results
of these two methods will be compared with the experimental data which already has been taken by an
undergraduate student of University of Manchester, and included as an Appendix-C to this report.
There is an experimental setup available in the Lab E-14 (SSB) of MACS group to perform required
experiments as well. There is also a plane to perform some more experiments on different materials
and of different types of discontinuity in addition to what has already performed to understand the
phenomenon of the electromagnetic waves scattering completely. The brief details of those planed
experiments are included in section (5.4) of this report under the heading of Experimental Work.

Aim and Objectives
2. Aim and Objectives of the Project: Permittivity of the material is a physical quantity that describes not only the effect of that medium on
the applied electric field but also the effect of the field on that particular material. It determines the
ability of the medium to polarize when that is placed in electric field and hence the net electric field
decreases inside that material while the applied electric field remains the same (due to the
phenomenon of polarization). One can say that, it is the ability of the material to permit electric field.
Electric permittivity of the material may be a complex number which explains the dielectric loss in
that medium. If the material has the finite conductivity and having complex permittivity
= j , then the dielectric loss tangent which is considered as the measure of dielectric loss of
the material at particular frequency is defined [14 ]
tan ( ) =
(2.1)
Where is the frequency of the applied electric field in radian/sec and is known as loss
tangent. The equation (2.1) shows that dielectric loss in the conductive material is not only because of
the phase difference between D & E (complex part of the permittivity) but it also depends majorly on
the conductivity of that medium.
Thus electric permittivity is very important parameter of the electric materials like conductors and
dielectrics. The value of the electric permittivity determines the behaviour of that material in the
electric field.
This project deals with the analytical calculation of the Complex permittivity of the dielectric
materials
2.1. Aim
The aim of this project is to understand how electromagnetic wave reflects and scatter from a periodic
boundary surface inside a waveguide cell.
In order to understand this phenomenon a experimental setup is being developed, this will also be
modelled in HFSS and separately two analytical methods will be applied to analyze the scattering of
electromagnetic waves from the canonical structure. The particular methods used are
1. Electromagnetic Scattering.
2. Ray Tracing.

Aim and Objectives
2.2. Objectives
Some of the main objectives of this project are as follows
1) Understanding of the dielectric theory.
2) Understanding of the concept of the complex permittivity of a dielectric medium particularly
conducting polymers.
3) Understanding of the phenomenon of plane electromagnetic wave propagation.
4) Understanding of the phenomenon of the electromagnetic wave polarization.
5) Familiarization with electromagnetic wave reflection from the different surfaces.
6) Exploration of the microwave measurement techniques.
7) Understanding the wave guide theory.
8) Understanding the electromagnetic wave scattering phenomenon, principle and all the
complex mathematical technique used in it.
9) Understanding the concept of ray tracing.
10) Familiarization with software like High frequency Structure simulator (HFSS) which is very
sophisticated three dimensional electromagnetic simulation tool.
11) Familiarization with the operation and working of vector network analyzer (VNA).
12) Finally the most important objective of this project is the development of the rigorous
mathematical formula or model to estimate the complex permittivity of 2-phase dielectric
medium with regular and periodic discontinuities by loading them in a rectangular waves
guide (WG-14), and will be generalized for different shapes of waveguides.
Some of the theoretical work is already been done before the submission of the feasibility report and
presented here in section 4 under the heading of literature review.

Experiment plan
3. Experimental Plan.
The materials (in this project conducting polymers are of the main interest) whose complex
permittivity is to be determined will be placed in a rectangular wave guide (WG-14), which is
designed for the electromagnetic waves of frequencies between 6 to 8 GHz and with the cut off
frequency of 4.5 GHz. The polymers profile layers having regular and periodic slots and grooves with
different shapes, pitches, depths and angles having the same area will be used. Almost all the facilities
to make these kinds of shapes are available in University of Manchester. These different shaped slots
are shown in the figures below.
Figure 3.1 Profile layer having regular and periodic grooves and
discontinuities
with
AB = 1mm, CD = 3mm,
dimensions
CE = 2 3mm , CF = pitch = 4mm,
AG = 5.8mm, = 120 0 , and
having the groove area of 3mm 2 .

In figure 3.1, it is clear that the slots are triangular and with the internal angle of 120 degrees, the
depth of the slots are 1mm, and having the area of
3mm 2 .
Figure 3.2:- Profile layer having regular and periodic grooves and
discontinuities
with
dimensions
of
AB = 3mm, CD = 1mm,
CE = 2mm, CF = pitch = 4mm, AG = 5.8mm, = 60 0 , and having

Experiment plan
the same groove area as that of the grooves shown in Figure 3.1 that
is 3mm 2 .
Figure 3.2 shows the triangular slots with the included angle of 60 degrees and the area of the slots are
3mm 2 .
Figure 3.3: - Profile layer having regular, periodic and rectangular

grooves and discontinuities with dimensions of
AB = 3mm,
CE = 1mm, CF = pitch = 4mm, AG = 5.8mm, , and having the same

groove area as that of Figure 3.1 that is 3mm 2 .
Similarly, figure 3.3 shows the rectangular slots. The three dimensional view is shown in the figure
3.4.
Figure 3.4: - Three dimensional view of the dielectric profile.

The S- parameters will be measured using an instrument called VNA (vector network analyzer) and
finally the complex permittivity of the profile layer will be calculated from the S- Parameters of the
profile layer and the S- parameters of the plane layer by loading the rectangular wave guided (WG-14)
with these different shaped dielectrics. The more detail explanation is given in section (5.4).

Literature review
4. Literature Review
In this portion of the report some of the background theory and literature which is reviewed from
different books and references particularly [1, 2, 7, 9, 10, 13, 14, 16, and 19] is discussed. A critical
summary and an assessment of knowledge in a field of Electromagnetics and Microwave are given
below.
4.1. Complex Permittivity

4.1.1. Effect of electric field on materials
All the materials are made of atoms or a molecule to understand the behaviour of the material in the
electric filed it is batter to understand the behaviour of the molecules in electric field.
There are two types of molecules
1) Non-Polar
2) Polar
Following is the description of the behaviour of these two types of molecules in the time independent
and time dependent electric field.
Electric dipole is induced in the non-polar molecule if it is placed in the static electric field because of
the electrostatic force of attraction causes the separation between the positively charged nucleus and
negatively charges electronic cloud and as the result of this separation not only the potential energy is
stored in the molecule but also the net electric field reduced because of the following two reasons
1. Electric field induced in the molecule is in opposite in direction as that of the applied field.
2. All the polarized molecule align themselves to oppose the applied electric field.
The following figure explains the phenomenon of polarization.
Figure 4.1.1 Polarization of non polar molecule in electric field

Literature review
In case of the polar molecules in week electric field only alignment takes place such that the electric
field of the molecule is in opposite direction to that of applied field. At high electric field the
separation between positively charged centre and negatively charges electronic cloud tends to
increase.
4.1.2. Polarized Material in Time Dependent Field

If the dipole is placed in the time dependent electric field then there is always a time lag or phase
difference between the applied and the radiated field. This can be taken as the phase difference
between the

E&D
fields which can be explained by the complex permittivity of
medium = j . This phase difference is depends on the frequency and generally it increases
with the increase in the frequency. Relative permittivity is related to the susceptibility by the following
equation
r = 1 + e
(4.1.1)
Thus the complex permittivity means the complex susceptibility given by
= j
(4.1.2)
Here an important point is the imaginary part of the permittivity or susceptibility is negative due to the
energy conservation [13] . Where
Ne 2 0 2
2
[( ) + ]
Ne ( )
=
m[( ) + ]
=
res
0 m 0
2
2 2
res
d
2 2
(4.1.3)
Also the real and imaginary part of the permittivity and susceptibility are related as
)
= 0 (1 + res
= 0 res
(4.1.4)
Where
N = Number of molecules per unit volume.
e = Electronic charge.
0 = Resonant Frequency.
= Operating frequency.
d = Damping Co-efficient.
m = Mass of electron.
The plot of the real and imaginary parts of susceptibility are shown below
Literature review
Figure 4.1.2: - Plot of the real and imaginary parts of the resonant
susceptibility res . The full width at half-maximum of the imaginary part
is equal to the damping co-efficient d .

res
4.2. Plane Wave Solutions [14]
4.2.1. Maxwells Equations

The four Maxwells Equation which explains classically all the phenomenon related to electricity and
magnetism in the universe and which is the fundamental unification of the electric and magnetic force
in point form (differential form) are given as,

D = v

B = 0

B
E =
t

D
H =
+J
t
(4.2.1)
(4.2.2)
(4.2.3)
(4.2.4)
Where

E = Electric Field Intensity (V / m ) .

D = Electric Flux Density C / m 2 .

H = Magnetic Field Intensity ( A / m ) .

B = Magnetic Flux Density Wb / m 2 .

Literature review

J = Volume Electric Current Density (A / m 2 ) .
v = Volume Charge Density (C / m 3 ) .
4.2.2. Source of Electromagnetic Field

The sources of electromagnetic fields are J and v but J can be written as

J = vv
(4.2.5)
Where, v is the velocity of the charge density v . Thus one can say that there is only one source of
electromagnetic field and that is v .
4.2.3. Constitutive Relations and Parameters

There are the relationships present between E & D, and , H & B and they are known as the
constitutive relations. In the medium of permittivity = 0 r and permeability = 0 r is given by

D = E

B= H
(4.2.6)
(4.2.7)
Where and are known as the constitutive parameters.
4.2.4. Helmholtz Equation

In source free (means v = 0 and J = 0 ), linear (means constitutive parameters are not the function of
the applied fields E and B ), isotropic (means constitutive parameters are not the function of the
direction), homogeneous (means if constitutive parameters are not the function of the position in the
material) and non dispersive (means that constitutive parameters are the function of the applied
frequency) region Maxwells curl equations (4.2.3 and 4.2.4) can be written in frequency form as

E = j H

H = j E
(4.2.8)
(4.2.9)

These are the two first order coupled vector partial differential equations. One can eliminate H from
these two equations to get a single second order vector partial differential equation which is also

known as wave equations in terms of E and is given by

2 E + 2 E = 0
(4.2.10)
Where 2 E is defined only in rectangular co-ordinate system.

Literature review

2 E = 2 E x x + 2 E y y + 2 E z z
=
2Ey
2 Ex
2 Ez
x
y
z
+
+
x 2
y 2
z 2
In other co-ordinate systems 2 E is defined as
(4.2.11)

2 E = E E
(4.2.12)

Similarly we can derive the wave equation for H field from equations (4.2.8 and 4.2.9) by

eliminating E field and the corresponding wave equation will look like

2 H + 2 H = 0
(4.2.13)
4.2.5. Plane Wave in loss less Medium

For loss-less medium the imaginary part of the complex permittivity is zero that is = 0 thus is real
number. Consider a wave which has non-zero x-component of electric field and it is z-dependent but
the rest of two components of electric fields are zero for all points in space that is E x ( z ) 0,
E y ( x, y, z ) = E z ( x, y, z ) = 0 x, y and z , Thus from equation (4.2.10)

2 Ex
+ k 2 Ex = 0
2
x
(4.2.14)
Where k = is known as wave number or propagation co-efficient. The solution of this second
order differential equation is given by
E x ( z ) = E + e jk z + E e jk z
(4.2.15)
Where E + and E are constants and E + e jk z is that component of the wave which is travelling in
the +z direction and E e jk z is that component of the wave which is travelling in the z-direction. In
time domain
x ( z, t ) = E + cos(t kz ) + E cos(t + kz )
(4.2.16)
Here one can define another term named as phased velocity The velocity with which the phase of the
wave is travelling It is denoted by v p and is defined by
vp =
(4.2.17)
4.2.6. Plane wave in a General Lossy Media

If the medium has finite conductivity then it has also finite losses. The Maxwells curl equations for
the medium of conductivity in frequency domain can be given as
10
Literature review

E = j H

H = j E + E
(4.2.18)
(4.2.19)
Again, one can formulate the single second order vector partial differential equation out of these two
first order coupled vector partial differential equations by eliminating one variable. For example by

eliminating H field one can have

E =0
2 E + 2 1 j

(4.2.20)

Again suppose that the E field has only x-component and depends only upon z-direction. Thus
equation (4.2.20) takes the form
2 Ex 2 Ex = 0
(4.2.21)
E x ( z ) = E + e z + E e z
(4.2.22)
Which has the solution
Where,
= + j = 1 j
(4.2.23)
And is known as the propagation constant, is known as attenuation constant and is known as
the phase constant.
Here it is important to mention that E + e z is that component of the wave that is travelling the +z
direction and E e z is travelling in the -z direction with the phase velocity v p =
= 2
and
experiencing
damping
factor
of .
For
the
and wave length
loss
less
case
= 0 = j = 0 and = k in terms of complex permittivity is given by
= j = j k = j (1 j tan( ))
(4.2.24)
Where tan( ) = is the loss tangent.
Next, the associated magnetic field can be calculated as
Hy =
j E x
j
=
E + e z E e z
z
(4.2.25)
As with the loss less case the wave impedance can be defined to relate the strength of electric and
magnetic fields

11
Literature review
(4.2.26)
Then equation (4.2.25) can be rewritten as
Hy =
[E e
+ z
E e z
(4.2.27)
4.3. Plane Wave Reflection from a Single Media Interface

Consider a plane wave having an electric field Ei ( z ) incident normally on a conducting half space
(z > 0) from
free space ( z < 0 ) . The electric field of reflected wave is Er ( z ) . Reflected wave is
directed towards the decreasing direction of z and some of the part of Ei ( z ) is transmitted in the
region ( z > 0 ) and lets call that Et ( z ) . The geometry is shown in the figure (4.4) where lossy half
space
(z > 0) is characterized by the parameters , , and .
Figure 4.3 Plane wave reflection from lossy media, normal incidence
General Media
Consider the incident plane wave has an electric field vector oriented along the x-axis and has the
propagation along the positive z-direction. The incident fields can be as written for ( z < 0 ) , by using
equation (4.2.3) as

Ei ( z ) = E0 e jk0 z x
(4.3.1)

1
H i ( z ) = E0 e jk 0 z y
(4.3.2)
Where 0 is the wave impedance of the free-space and E0 is the arbitrary amplitude.

12
Literature review
The reflected wave is also present in the free space ( z < 0 ) and electric and magnetic fields of the
reflected waves are given by using equation (4.2.3)

Er ( z ) = E0e jk 0 z x
(4.3.3)

1
H r ( z ) = E0 e jk0 z y
(4.3.4)
Where is unknown reflection coefficient of the reflected electric fields.

The transmitted field in the region ( z > 0 ) is given by using equation (4.2.3)

Er ( z ) = TE0e z x
(4.3.5)

1
H r ( z ) = T E0e z y
(4.3.6)
Where T the transmission coefficient of the transmitted electric field and is the intrinsic impedance
given by the equation (4.2.26) and is the propagation constant given by equation (4.2.24).
By applying the boundary condition on can find the two unknown co-efficient
T = 1+ =
2
+ 0
0
+ 0
(4.3.7)
(4.3.8)
4.4. Oblique Incidence at a Dielectric Interface [ 9]

For the analysis of the obliquely incident plane wave on plane interface between two loss less
dielectric regions consider the following figure
Figure 4.4 Oblique incidence of the plane wave on the plane interface
13
Literature review
There are two canonical cases

1) Parallel polarization, electric field is in xz-plane.
2) Perpendicular polarization, electric field is perpendicular to xz-plane.
4.4.1. Parallel polarization

Consider the incident fields as Ei , H i and the corresponding reflected and transmitted fields are ,

Er , H r and Et , H t respectively. They are given as

Ei = E0 (cosi x sini z ) e jk1 ( x cosi + z sini )
(4.4.1)

E
H i = 0 ye jk1 ( x cosi + z sini )
(4.4.2)

Er = E0 (cos r x + sin r z ) e jk1 ( x cosr z sinr )
(4.4.3)

E
H r = 0 y e jk1 ( x cos r z sin r )
(4.4.4)

Et = E0T (cos t x sin t z ) e jk 2 ( x cost + z sint )
(4.4.5)

E
H t = 0 y e jk2 ( x cost + z sint )
(4.4.6)
By applying the boundary conditions we can relate the four unknown constants as
[13 ]
2 cos t 1cosi
2 cos t + 1cosi
(4.4.7)
T=
2 2 cosi
2 cos t + 1cosi
(4.4.8)
k1 = 0 1
(4.4.9)
k 2 = 0 2
(4.4.10)
1= 0
1
(4.4.11)
2 = 0
2
(4.4.12)
Where,
and

14
Literature review
4.4.2. Perpendicular polarization

In case of the perpendicular polarization, the equations for the incident reflected and transmitted
waves will be changed but the values for and T remain the same as that of the parallel case [14 ] .
4.5. Plane Wave Reflection from Multiple Interfaces [10]

In case of multiple boundaries, one has to define the reflection co-efficient at each and every boundary
as shown in the figure 4.4.5 [10 ] .
Figure 4.5 Reflection of the wave from multiple medium interfaces [10 ] .
The reflection coefficients are referred to as intrinsic reflection coefficient and they would exist at
each boundary if two semi infinite media from each of the boundaries (neglecting the presence of the
other boundaries) using the intrinsic reflection coefficients. The input reflection coefficient can be
written as
in z = d
12 + 23 e j 2 2 d
=
1 + 12 23 e j 2 2 d
(4.5.1)
In the reference C. A. Balanis, this equation is also derived using ray tracing method which will be
very helpful in this project.

15
Literature review
4.6. Wave Guides

A waveguide is a structure which guides waves, such as electromagnetic waves. There are different
types of waveguides. Waveguides can be constructed to carry waves over a wide portion of the
electromagnetic spectrum, but are especially useful in the microwave and optical frequency ranges
In 1897, Lord Rayleigh (John Willim Stutt) mathematically proved that wave propagation is possible
in wave guides both for circular and rectangular. In this project rectangular wave guides are more
important because they are easily available in the labs also the mathematics of this wave guide is
simple than that of the circular wave guide. In addition to this the experimental results with
rectangular wave guide are available. But at the end it is a plan to generalize the result for other shapes
of the wave guides.
Wave guides, often consisting of simple conductors, support transverse electric (TE) and/or transverse
magnetic (TM) waves, characterized by the presence of longitudinal magnetic or electric field
components respectively.
4.7. Rectangular wave guide

Rectangular wave guide is one of the earliest types of transmission lines used to transport microwave
signals. The figure (4.7) shows some of the slandered rectangular wave guides components that are
available
Figure 4.7: - Slandered rectangular wave guides
The following table [14 ] will show the summary of the results of the study of rectangular wave guide
before the feasibility study. In this table time-harmonic field with a e j t dependence and wave
propagation along the z-axis are assumed also the electric and magnetic fields can be assumed as

16
Literature review

E ( x, y, z ) = [e (x, y ) + z ez ( x, y )] e j z

H ( x, y, z ) = h ( x, y ) + z hz ( x, y ) e j z
QUANTITY
TEmn MODE
TM mn MODE
kc
(m a )2 + (n b )2
(m a )2 + (n b )2
k 2 kc
k 2 kc
2
kc
2
kc
vp
k 2tan
2
k 2tan
2
(4.7.2)
Ez
m x n y j z
Bmn sin
sin
e
a b
Hz
m x
n y j z
Amn cos
cos
e
a
b
Ex
j n
m x n y j z
Amn cos
sin
e
2
kc b
a b

(4.7.1)
j m
m x n y j z
Bmn cos
sin
e
2
kc a
a b
17
Literature review
j m
m x
n y j z
Amn sin
cos
e
2
kc a
a
b
j n
m x
n y j z
Bmn sin
cos
e
2
kc b
a
b
Ey
Hx
j m
m x
n y j z
Amn sin
cos
e
2
kc a
a
b
j n
m x
n y j z
Bmn sin
cos
e
2
kc b
a
b
Hy
j n
m x n y j z
Amn cos
sin
e
2
kc b
a b
jm
m x n y j z
Bmn cos
sin
e
2
kc a
a b
Table 4.7.1: - Characteristics of the rectangular wave guide [14 ] .
Where
k = wave number.
kc = Cut off wave number.
= phase constant.
a = length of the rectangular wave guide.
b = width of the rectangular wave guide.
c = cut off wave length.

g = guide wave length.
v p = phase velocity.
d = attenuation constant.
tan = loss tangent.
4.8. Scattering by Conducting Wedge [10]
Scattering of electromagnetic waves from some regular shaped objects are studied in which scattering
from the conducting Wedge is the most important one because the wedge is a canonical problem that
can be used to represent locally (near the edge) the scattering of more complex structures, asymptotic
forms of its solution have been utilized to solve numerous practical problems. The asymptotic forms of
its solution are obtained by taking the infinite series modal solution and first transforming it into an
integral by the so-called Watson transformation [ 20 , 21] . The integral is then evaluated by the method of

18
Literature review
steepest descent (saddle point method)
[ 22 ]
. The resulting terms of the integral evaluation can be
recognized to represent the geometrical optics fields, both incident and reflected geometrical optics
fields, and the diffracted fields, both incident and reflected diffracted fields. These forms of the
solution have received considerable attention in the geometrical theory of diffraction (GTD) which has
become a generic name in the area of antennas and scattering.
Figure 4.8.1: - Electric line source near a two dimensional conducting wedge, reference at
bisector [10 ] .
The total electric field because of the incident and scattered electric field is calculated in reference [10 ] .
And is given by
av J v ( )H v(2 ) ( )sin [v( )] sin[v( )],
E zt = E zi + E zs = v
(2 )
av J v ( )H v ( )sin [v( )] sin[v( )],
v
(4.8.1)
4.9. Maxwell- Garnett Mixing Theory

The study of Maxwell-Garnett theory start from the reference [1] which is basically the fundamental
paper in the field of calculation of the complex permittivity of the mixture of the medium with the
known permittivities of the elements of the mixture. Thus the permittivity only depends on the
distribution of one element which one can call impurities on the other element and on the shape of the
impurity present. The title of the paper was Colour in the metal glasses and in metallic films and it
was published in 1904. It basically treated the impurities as spherical shaped object with different
complex permittivity was present in the material.
19
Literature review
The two other papers which were studies are [ 2 ,3] , they basically based on the application of the
Maxwell-Garnett theory in special cases. In the reference
[2]
Maxwell Garnett theory was proved
mathematically and then checked by the three experiments only by taking the homogenous medium in
which the shape of the impurity was considered spherical.
In the reference [3] Maxwell Garnett Theory was applied for the mixtures of anisotropic inclusions
with conducting polymers. The effective dielectric function e for a medium of anisotropic inclusions
embedded in an isotropic host is calculated using the Maxwell Garnett approximation. For uniaxial
inclusions, e depends on how well the inclusions are aligned. Then the approximation to study e for
a model of quasi-one-dimensional organic polymers was performed. The polymer is assumed to be
made up of small single crystals embedded in an isotropic host of randomly oriented polymer chains.
The host dielectric function is calculated using the effective-medium approximation (EMA) The
resulting frequency-dependent e ( ) closely resembles experiment. The formula used to approximate
the total or effective permittivity is
eeff = e2 + 2 f e2
e1 e2
e1 + e2 f (e1 e2 )
(4.9.1)
Where e2 is the permittivity of the free space, e1 is the permittivity of the profile layer and f is the
material fill factor.

20
Methodology
5. Methodology
There are three different ways are planed to work on this project and these are
1)
Electromagnetic Wave Scattering.
2)
Ray Tracing.
3)
Modelling using HFSS.
4)
Experimental Work and verification.
The brief introductions of these three methodologies are as follows,
5.1. Electromagnetic Wave Scattering

As motioned in the section 3 that dielectric profile layers are placed in the rectangular wave guide and
S-parameter are measured with the help of vector network analyzer (VNA). The complete theory of
electromagnetic wave scattering will be studies from the references given at the end particularly
[10,13,9,7 and 6] . The mathematical formula which one can use for the 2-phase dielectric mediums
from the Maxwell-Garnett Theory and is given by
eeff = e2 + 2 f e2
e1 e2
e1 + e2 f (e1 e2 )
(5.1.1)
Where e2 is the permittivity of the free space, e1 is the permittivity of the profile layer and f is the
material fill factor.
The experimental results which are given in the AppendixC are close to this curve but not exactly
equal to this. There are two possibilities rather the theory is incorrect or there are some experimental
errors. In this portion of the project which consist of almost 2 weeks the theoretical study of this
mixing formula will be done.
5.2. Ray Tracing

It is a mathematical technique which is derived from the Maxwells Equations but at higher frequency
these equations gives the same result as that of the ray tracing just like that at low frequency
Maxwells Equations reduced to the circuit theory. It is the easiness of the ray tracing technique that
makes it so popular as compared with the Maxwells Equations.
Ray tracing is simple rules of optics which are relatively simple to implement and apply. In this
project the material will be taken with relatively high conductivity so that the dielectric loss will be
high and hence only two or three reflections will be enough to be considered because of the decay
(dielectric loss) of the energy of the wave as it propagate in the medium. The reflections and

21
Methodology
refractions of the electromagnetic waves from the dielectric medium with periodic identical grooves
are shown below.
Figure 5.2.1: - Reflection and refraction of the electromagnetic waves
5.3. Modelling with HFSS

HFSS is a commercial finite element method solver for electromagnetic structures from Ansoft
corporation. The acronym originally stood for high frequency structural simulator. It is one of the
most popular and powerful applications used for antenna design and the design of complex RF
electronic circuit elements including filters, transmission lines, and packaging. It is also very good to
handle scattering problems. The experimental setup which is shown in section 5.4 of this report will
also be simulated using this electromagnetic tool to find out the complex permittivity of the
conducting polymers. In order to solve this problem using HFSS it is good opportunity to understand
FEM and FDTD methods.
5.4. Experimental Work

In order to test a theory it should give the same result as that of experiment. So experiment will be set
up to perform scattering from different structures as explained earlier. Some of these profiling and
cutting has already been done in University of Manchester and the university has the facility to do all
the required jobs in this project. For example V.N.A is an important and expensive microwave tool
which is easily available in the lab E-14 (SSB).

22
Methodology
5.4.1. Vector Network Analyzer

A network analyzer is an instrument used to analyze the
properties of electrical networks, especially those properties
associated with the reflection and transmission of electrical
signals known as scattering parameters (S-parameters).
Network analyzers are used mostly at high frequencies like
100 GHz. But as in this case the operating frequency is
between 6 to 8 GHz thus relatively cheaper V.N.A. can
work.
Figure 5.4.1: - Vector Network Analyzer
The V.N.A that will be used in this project is relatively old and the maximum frequency it can handle
with is about 40 GHz. the problem of the calibration of this V.N.A. the notes written by Dr. Arther. D.
Haigh will be followed which is included as the Appendix-B and the end of this report.
The two main categories of Network Analyzers are
Scalar Network Analyzer (SNA) - Measures amplitude properties only.
Vector Network Analyzer (VNA) - Measures both amplitude and phase properties.
Some of the working and the construction of the VNA are also studied like calibration, finding the SParameters from VNA, importance of the time given to VNA after turning it ON to heat up and
importance if the reflections free feed lines.
5.4.2. Steps Involved in this method

The basic steps involved in this method are,
1. Measure S- Parameters of profiled sample with the help of VNA.
2. Measure S- Parameters of the plane sample with the help of VNA.
3. Calculation of the Characteristic Matrix from the S-Parameters of the plane sample.
4. Calculation of the Characteristic Matrix from the S- Parameters of both the layers.
5. Finding the inverse of the Characteristic Matrix of the plane sample.
6. Calculate the Characteristic Matrix of the profile layer.
7. From the Characteristic Matrix of the profiled layer calculate the complex permittivity of the
profiled layer.

23
Methodology
Figure 5.4.2: - Dielectric profile, with regular discontinuities.

Where the characteristic matrix is given by
cosh ( l )
sinh ( l )
sinh ( l ) z
cosh ( l )
In which l = Length of the wave guide and = Propagation constant. And
z=
(5.1.1)
This is modified impedance the proof of this is given in the notes of Dr. Arther. D. Haigh, who used
Tischers expression for the wave guide transmission through dielectric layer to prove this.
Figure 5.4.3: - Experimental Setup

24
6. Project Planning, 6.1. Gantt Chart
25
Project Plan
6.2. Detail Description of project planning

Task 2
The preliminary study was done just after the project allocation during the Charismas holidays for the
5 weeks approximately before the first semester examination. After that there were examinations of
the first semester which took 3 weeks.
Task 3
This task is related with the literature review and collection of information regarding the
electromagnetics, propagation of electromagnetic waves in parallel with the second semester course
work. It was approximately 11 weeks long and just after that period there were examinations of second
semester.
Task 4
This was started just after the examination of the second semester. The duration for this task was 2
weeks. It involves the compilation of feasibility report. Feasibility report explains what the project is
about and how it will be done. It also includes some of the literature review and the methodology of
the project.
Task 5 and Task 6

After the submission of the feasibility this task has planned to take 2 weeks and consists of extensive
piece of research. It aims to get the background knowledge and compiling the data in correct format
and acquire the mathematical background of the problem under consideration. During the same period
simulation on HFSS will be done and introduction of the VNA will be given by the supervisor.
Task 7
This task includes the development of the methods that can be used to formulate a mathematical
formula to calculate the complex permittivity of a dielectric material with periodic discontinuities in a
rectangular wave guide (WG-14) which uses the frequency from 6 to 8 GHz using the technique of
electromagnetic wave scattering. 2- Weeks are dedicated to this task.
Task 8
This task is also very mathematical in which the general formula will be developed to find the
complex permittivity of the same kind and shape of the dielectric material which will be considered in
Task 7, using Ray Tracing technique. The time plan to given to this task is 1.4 weeks.

26
Project Plan
Task 9 and Task 10

This includes the comparison of the data collected from the two methods with the experimental data
which has been already been obtained by the undergraduate student of the university of Manchester.
Task 11
This is the most important and difficult portion of the project which includes writing a paper for
publication. According to the plan the time taken by this Task will be 4-Weeks.
Task 12
This task is about compiling of data in an orderly fashion for the dissertation writing. This tasks is of
3-weeks long
Task 13
This is the second last step to finalizing the project which is based on getting feed back from the
supervisor, making changes and re-compilation of data. After discussion with the supervisor the time
for this is decided to be approximately 1-Week.
Task 14
At the end before the submission of the final draft there is a buffer period to compensate any
unfortunate misshape. Finally the project will be submitted on 7th September, 2009.

27
References
7. References:
[1]. J.C Maxwell-Garnett, Philo, Trans. R. Soc. London, Ser. A 203, 385 (1904).
[2]. Pierre Mallet, C. A. Guerin and Anne Sentenac, Phys. Rev. B 72, 014205 (2005).
[3]. D. Stroud and O. Levy, Phys. Rev. B 56, 8035 (1997).
[4]. D. Stroud and P. F. Pan, Phys. Rev. B 13, 1434 (1976).
[5]. N. J. Pinto, A. A. Acosta, G. P. Sinha and F. M. Aliev, Synth. Met. 113 (2000) 77.
[6]. A. H. Sihvola and O. P. M. Pekonen, J. Phys. D: Appl. Phys. 29 (1996) 514-521.
[7]. L. Tsang and J. A. Kong, Scattering of electromagnetic waves, Advanced Topics (Wiley, New
York, 2001).
[8]. S. Ramo, T. R. Whinnery, and T. van Duzer, Fields and Waves in Communication Electronics,
John Wiley & Sons, N. Y., 1965.
[9]. R. E. Collin, Foundation of Microwave Engineering, Second Edition, McGraw-Hill, N.Y., 1992.
[10]. C. A. Balanis, Advanced Engineering Electromagnetics, John Wiley & Sons, N.Y., 1989.
[11]. D. K. Cheng, Fields and Waves Electromagnetics, 2nd ed. Reading, Mass.: Addison-Wesley,
1989.
[12]. Feynman, R.P.; Leighton, R.O.; and Sands, Lectures on Physics, vol2, Addison-Wesley,
Reading, Mass., 1964.
[13]. W. H. Hayt, Engineering Electromagnetics, McGraw-Hill Series in Electrical Engineering, 2005.
[14]. D. M. Pozar, Microwave Engineering, 3rd Edition, Wiley & Sons (2005).
[15]. D. M. Pozar, Microwave and RF design of Wireless System, 2nd Edition, Wiley, N.J., (2001).
[16]. R. E. Collin, Field Theory of Guided Waves, McGraw-Hill, N.Y., (1960).
[17]. C. A. Balanis, Antenna Theory: Analysis and design, John Wiley & Sons, N.Y., (1982).
[18]. R. F. Harrington, Time Harmonic Electromagnetic Fields, McGraw Hill, N.Y., (1961).
[19]. J. A. Stratton, Electromagnetic Theory. McGraw Hill, N.Y., (1941).
[20]. J. R. Wait, Electromagnetic Radiation/rom Cylindrical Structures, Pergamon, New York 1959.
[21]. G. N. Watson, "The diffraction of electrical waves by the earth," Proc. Roy. Soc. (London), vol.
A95, pp. 83-99, 1918.
[22]. L. B. Felsen and N. Marcuvitz, Radiation and Scattering of Waves, Prentice-Hall, Englewood
Cliffs, N.J., 1973.

28
Appendix-A
Appendix A
Calibration of 8510 VNA
CRT off/on.#
Off Press key systems followed by CRT off soft key
On Press preset
Ramp or Step frequency scan
For greater accuracy use frequency scan.
To set frequency scan
Press stimulus then Menu soft key and choose either step or scan
To set Z0
Press CALL, MORE, set Z0 and change to 1 ohm.
To load Cal Kit
Left click VNA Cal Kit manager
Select call kit
Click GPIB on tool bar, select e.g. Call Kit 2
Then click GPIB to send to VNA and close pan
Number of calibration standards
1Short 1, 3 Short 2,9 Load 11 Thru
TRL Calibration
Set Z0=0 by pressing Cal and then More
For greater accuracy use averaging
Press response then menu soft key Averaging on *128
In step mode frequency using *128 has little time penalty
Before commencing calibration delete one of 8 previously stored calibrations
Calibration procedure
TRL Thru use
by itself and wait while VNA does 6 frequency scans

Appendix-A
TRL Refl $11 and $22 reflection use
TRL Line use
offset short
3
itself and wait while VNA does 6 frequency scans
8
Isolation load not changed for forward and reverse isolation

Assessment of calibration accuracy
Check $11 and $22 using waveguide short circuit from calibration kit
When checking phase use checking offset
Press RESPONSE, MENU, Offset and key in 180.
[These are the notes taken from Dr. Arther. D. Haigh]

II
Appendix B Experimental Results
Appendix B
Experimental Results
This section includes the results obtained by an undergraduate student named Ahtasham Baig of the University of Manchester. The
results are shown here with the permission from Dr. Arthur. D. Haigh and Ahtasham.

III

IV
experimental results almost matching the di electric

mixing formula values
little deviation from the calculated values
Sample
Fill Factor for

Air
Fill Factor for

Sample
Permittivity Value at
6 GHz
Permittivity Value at
8 GHz
Grpt2_90
Grpt2.5_90
Grpt3_90
0.5
0.4
0.33
0.5
0.6
0.7
1.5
1.79
1.85
1.7
1.857
1.932
sl1pt_2
sl1pt_2.5
sl1pt_3
0.5
0.4
0.33
0.5
0.6
0.67
1.63
1.79
1.97
1.71
1.89
2.07
Grpt1.4_60
Grpt1.7_60
Grpt2_60
0.4124
0.3396
0.2887
0.58
0.67
0.71
1.85
1.99
2.07
1.75
1.89
1.99
y = -5E-05x + 2.1525
sl1pt_1.4
sl1pt_1.7
sl1pt_2.0
0.7143
0.5882
0.28
0.41
1.22
1.47
1.21
1.43
y = -6E-06x + 1.2561
0.5
0.5
1.65

Equation for trendline
y = 4E-05x + 1.3816
y = 3E-05x + 1.6177
y = 4E-05x + 1.6125
y = 4E-05x + 1.397
y = 5E-05x + 1.4947
y = 5E-05x + 1.6707
y = -4E-05x + 2.2062
y = -4E-05x + 2.3137
y = -2E-05x + 1.5903
1.61
y = -2E-05x + 1.7733

Grpt4.0_120
Grpt4.5_120
Grpt5.0_120
0.433
0.39
0.35
0.567
0.61
0.65
1.57
1.77
1.64
1.6
1.7
1.61
y = -5E-06x + 1.5989
sl1pt_4.0
sl1pt_4.5
sl1pt_5.0
0.433
0.39
0.35
0.567
0.61
0.65
1.72
1.78
1.8
1.7
1.76
1.76
y = -1E-05x + 1.7773

y = -3E-05x + 1.9462
y = -2E-05x + 1.7644
y = -8E-06x + 1.8271
y = -2E-05x + 1.9164
VI

MUHAMMAD OMER FAROOQ, MSC Dissertation, Communication-Engineering, 2009, Student ID 7367100 Complete

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MUHAMMAD OMER FAROOQ, MSC Dissertation, Communication-Engineering, 2009, Student ID 7367100 Complete

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Complex Permittivity of Dielectric Materials with

A dissertation submitted to The University of

Muhammad Omer FAROOQ.

6.4. Different Sizes and Shapes of the Interface.....73

of experimental results are positive in number of

Word count: 20,536 words

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

Table-5.4.22 Complex permittivity of 90 degree grooves having 5.0mm pitch.65

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

Air Fill Factor

Coherent Potential Formula

Device under Test

Effective Medium Approximation

Electromagnetic Wave Scattering

Finite Difference time domain

Finite Element Method

Geometrical Theory of Diffraction

High Frequency Structure Simulator

Monolithic Microwave Integrated Circuit

Portable Appliance Test

S-Parameters Scattering Parameters

Standing Wave Ratio

Transverse Electric Mode

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

Transverse electromagnetic mode

Transverse magnetic mode

Visual Display Unit

Vector network analyser

Voltage standing wave ratio.

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

0 = Absolute permittivity of free space.

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

= Free space wavelength.

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

permittivity of water is very high (according to Cole-Cole equation it is approximately -10

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

Understanding of the Origin of the complex permittivity of dielectric mediums.

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

Exploration of the microwave measurement techniques.

Understanding the concept of ray tracing.

Familiarization with software like High frequency Structure simulator (HFSS)

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

is permittivity of inclusions in free space background of

permittivity 0 , f is the volume fraction of the inclusion. In [2] a rigorous derivation of

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

3.1. Dielectrics and Polarization

Figure-3.2.1 Polarization of non polar molecule in electric field

3.1.1. Basic Concept of Polarization

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering

N = Total number of dipoles in the volume v .

The electric field and the polarization are related as

M.OMER FAROOQ, Student ID 7367100. MSc Communication Engineering