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RDS(on)
60 m (*)
IOUT
6 A (*)
VCC
36 V
n
n
n
n
n
n
10
PowerSO-10
DESCRIPTION
The VND830SP is a monolithic device made by
using
STMicroelectronics
VIPower
M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active VCC pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
BLOCK DIAGRAM
VCC
VCC
CLAMP
OVERVOLTAGE
UNDERVOLTAGE
GND
CLAMP 1
OUTPUT1
INPUT1
DRIVER 1
CLAMP 2
STATUS1
CURRENT LIMITER 1
LOGIC
DRIVER 2
OUTPUT2
OVERTEMP. 1
OPENLOAD ON 1
CURRENT LIMITER 2
INPUT2
OPENLOAD OFF 1
OPENLOAD ON 2
STATUS2
OPENLOAD OFF 2
OVERTEMP. 2
May 2002
1/18
VND830SP
ABSOLUTE MAXIMUM RATING
Symbol
VCC
- V CC
- IGND
IOUT
- IOUT
IIN
ISTAT
VESD
EMAX
Ptot
Tj
Tc
Tstg
Parameter
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
DC Status Current
Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF)
Value
41
- 0.3
- 200
Internally Limited
-6
+/- 10
+/- 10
Unit
V
V
mA
A
A
mA
mA
- INPUT
- STATUS
- OUTPUT
4000
4000
5000
V
V
V
- VCC
Maximum Switching Energy
(L=1.8mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=9A)
Power Dissipation TC=25C
Junction Operating Temperature
Case Operating Temperature
Storage Temperature
5000
100
mJ
74
Internally Limited
- 40 to 150
- 55 to 150
W
C
C
C
OUTPUT 1
OUTPUT 1
N.C.
OUTPUT 2
OUTPUT 2
5
4
3
6
7
8
9
10
GROUND
INPUT 1
STATUS 1
STATUS 2
INPUT 2
2
1
11
VCC
ICC
IIN1
V CC
V CC
INPUT 1
ISTAT1
V IN1
STATUS 1
V STAT1
IOUT1
IIN2
OUTPUT 1
INPUT 2
V IN2 ISTAT2
IOUT2
STATUS 2
VSTAT2
GND
OUTPUT 2
V OUT2
IGND
2/18
V OUT1
VND830SP
THERMAL DATA
Symbol
Rthj-case
Parameter
Thermal Resistance Junction-case
Value
1.7
Unit
C/W
Rthj-amb
52 (*)
C/W
(*) When mounted on a standard single-sided FR-4 board with 50mm2 of Cu (at least 35m thick). Horizontal mounting and no artificial air
flow.
Parameter
Operating Supply Voltage
Undervoltage Shut-down
Overvoltage Shut-down
On State Resistance
IS (**)
Supply Current
IL(off1)
IL(off2)
IL(off3)
IL(off4)
Test Conditions
Min
5.5
3
36
Typ
13
4
Max
36
5.5
12
60
120
40
Unit
V
V
V
m
m
A
12
5
25
7
50
0
5
3
A
mA
A
A
A
A
Typ
Max
Unit
0
-75
Test Conditions
RL=6.5 from VIN rising edge to
VOUT=1.3V
RL=6.5 from VIN falling edge to
VOUT=11.7V
Min
Parameter
td(on)
td(off)
dVOUT/
dt(on)
dVOUT/
dt(off)
30
30
See
relative
diagram
See
relative
diagram
V/s
V/s
LOGIC INPUT
Symbol
VIL
IIL
VIH
IIH
VI(hyst)
VICL
Parameter
Input Low Level
Low Level Input Current
Input High Level
High Level Input Current
Input Hysteresis Voltage
Input Clamp Voltage
Test Conditions
VIN = 1.25V
Min
Typ
1
3.25
VIN = 3.25V
IIN = 1mA
IIN = -1mA
Max
1.25
10
0.5
6
6.8
-0.7
Unit
V
A
V
A
V
V
V
3/18
VND830SP
ELECTRICAL CHARACTERISTICS (continued)
STATUS PIN
Symbol
VSTAT
ILSTAT
CSTAT
VSCL
Parameter
Test Conditions
Status Low Output Voltage ISTAT= 1.6 mA
Status Leakage Current
Normal Operation; VSTAT= 5V
Status Pin Input
Normal Operation; VSTAT= 5V
Capacitance
ISTAT= 1mA
Status Clamp Voltage
ISTAT= - 1mA
Min
Typ
6.8
Max
0.5
10
Unit
V
A
100
pF
-0.7
PROTECTIONS
Symbol
T TSD
TR
Thyst
tSDL
Parameter
Shut-down Temperature
Reset Temperature
Thermal Hysteresis
Status Delay in Overload
Conditions
Ilim
Current limitation
Vdemag
Test Conditions
Min
150
135
7
Typ
175
Unit
C
C
C
20
15
15
15
Tj>TTSD
VCC=13V
Max
200
OPENLOAD DETECTION
Symbol
IOL
tDOL(on)
VOL
TDOL(off)
Parameter
Openload ON State
Detection Threshold
Openload ON State
Test Conditions
VIN=5V
Detection Delay
Openload OFF State
Voltage Detection
Threshold
Openload Detection Delay
at Turn Off
VIN=0V
Min
Typ
Max
Unit
50
100
200
mA
200
3.5
1000
IOUT =0A
1.5
VSTATn
VSTATn
tSDL
tDOL(off)
4/18
2.5
tDOL(on)
tSDL
VND830SP
dVOUT/dt(off)
dVOUT/dt(on)
10%
t
VINn
td(on)
td(off)
TRUTH TABLE
CONDITIONS
Normal Operation
Current Limitation
Overtemperature
Undervoltage
Overvoltage
Output Voltage > VOL
Output Current < IOL
INPUT
L
H
L
H
H
L
H
L
H
L
H
L
H
L
H
OUTPUT
L
H
L
X
X
L
L
L
L
L
L
H
H
L
H
STATUS
H
H
H
(Tj < TTSD) H
(Tj > TTSD) L
H
L
X
X
H
H
L
H
H
L
5/18
VND830SP
ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN
ISO T/R 7637/1
Test Pulse
II
TEST LEVELS
III
IV
1
2
3a
3b
4
5
-25 V
+25 V
-25 V
+25 V
-4 V
+26.5 V
-50 V
+50 V
-50 V
+50 V
-5 V
+46.5 V
-75 V
+75 V
-100 V
+75 V
-6 V
+66.5 V
-100 V
+100 V
-150 V
+100 V
-7 V
+86.5 V
6/18
I
C
C
C
C
C
C
Delays and
Impedance
2 ms 10
0.2 ms 10
0.1 s 50
0.1 s 50
100 ms, 0.01
400 ms, 2
IV
C
C
C
C
C
E
CONTENTS
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be returned
to proper operation without replacing the device.
VND830SP
Figure 1: Waveforms
NORMAL OPERATION
INPUTn
OUTPUT VOLTAGEn
STATUSn
UNDERVOLTAGE
VUSDhyst
VCC
VUSD
INPUTn
OUTPUT VOLTAGEn
STATUSn
undefined
OVERVOLTAGE
VCC<VOV
VCC>V OV
VCC
INPUTn
OUTPUT VOLTAGEn
STATUSn
OPEN LOAD with external pull-up
INPUTn
VOUT>VOL
OUTPUT VOLTAGEn
VOL
STATUSn
TTSD
TR
INPUTn
OUTPUT CURRENTn
STATUSn
7/18
VND830SP
APPLICATION SCHEMATIC
+5V +5V
+5V
VCC
Rprot
STATUS1
Dld
Rprot
INPUT1
OUTPUT1
Rprot
STATUS2
Rprot
INPUT2
OUTPUT2
GND
VGND
GND PROTECTION
REVERSE BATTERY
NETWORK
AGAINST
RGND
DGND
8/18
VND830SP
C I/Os PROTECTION:
V batt.
VPU
V CC
RPU
INPUT
DRIVER
+
LOGIC
IL(off2)
OUT
+
R
STATUS
VOL
RL
GROUND
9/18
VND830SP
High Level Input Current
Ii h (uA)
IL(off1) (uA)
2.5
4.5
2.25
Off state
Vcc=36V
Vin=Vout=0V
2
1.75
Vin=3.25V
4
3.5
1.5
1.25
2.5
0.75
1.5
0.5
0.25
0.5
0
0
-50
-25
25
50
75
100
125
150
-50
175
-25
25
50
75
100
125
150
175
Tc (C)
Tc (C)
Vicl (V)
Ilstat (uA)
0.05
7.8
Iin=1mA
7.6
0.04
7.4
Vstat=5V
7.2
0.03
7
6.8
0.02
6.6
6.4
0.01
6.2
6
0
-50
-25
25
50
75
100
125
150
-50
175
-25
25
Tc (C)
50
75
100
125
150
175
Tc (C)
Vstat (V)
Vscl (V)
8
0.8
7.8
0.7
Istat=1mA
Istat=1.6mA
7.6
0.6
7.4
0.5
7.2
7
0.4
6.8
0.3
6.6
0.2
6.4
0.1
6.2
6
-50
-25
25
50
75
Tc (C)
10/18
100
125
150
175
-50
-25
25
50
75
Tc (C)
100
125
150
175
VND830SP
On State Resistance Vs Tcase
Ron (mOhm)
Ron (mOhm)
160
120
Tc=150C
110
140
Iout=2A
Vcc=8V; 13V & 36V
120
100
90
80
100
70
60
80
Tc=25C
50
60
40
Tc= - 40C
30
40
20
20
Iout=5A
10
0
0
-50
-25
25
50
75
100
125
150
175
10
15
20
Tc (C)
25
30
35
40
Vcc (V)
Iol (mA)
Vih (V)
150
3.6
140
3.4
Vcc=13V
Vin=5V
130
3.2
120
3
110
100
2.8
90
2.6
80
2.4
70
2.2
60
50
2
-50
-25
25
50
75
100
125
150
175
-50
-25
25
Tc (C)
50
75
100
125
150
175
100
125
150
175
Tc (C)
Vil (V)
Vhyst (V)
2.6
1.5
1.4
2.4
1.3
2.2
1.2
2
1.1
1.8
1
0.9
1.6
0.8
1.4
0.7
1.2
0.6
0.5
-50
-25
25
50
75
Tc (C)
100
125
150
175
-50
-25
25
50
75
Tc (C)
11/18
VND830SP
Overvoltage Shutdown
Vov (V)
Vol (V)
50
48
4.5
46
44
3.5
Vin=0V
42
40
2.5
38
36
1.5
34
32
0.5
30
0
-50
-25
25
50
75
100
125
150
175
-50
-25
25
Tc (C)
dVout/dt(off) (V/ms)
800
600
550
Vcc=13V
Rl=6.5Ohm
125
150
175
100
125
150
175
Vcc=13V
Rl=6.5Ohm
500
500
450
400
400
300
350
200
300
100
250
200
-50
-25
25
50
75
100
125
150
175
Tc (C)
Ilim (A)
20
18
Vcc=13V
16
14
12
10
8
6
4
2
0
-50
-25
25
50
75
Tc (C)
-50
-25
25
50
75
Tc (C)
ILIM Vs Tcase
12/18
100
dVout/dt(on) (V/ms)
600
75
Tc (C)
700
50
100
125
150
175
VND830SP
Maximum turn off current versus load inductance
ILMAX (A)
10
A
B
1
0.1
L (mH )
10
100
Demagnetization
Demagnetization
13/18
VND830SP
Layout condition of Rth and Z th measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
Cu thickness=35m, Copper areas: from minimum pad lay-out to 8cm2).
55
Tj-Tamb=50C
50
45
40
35
30
0
Cu area (cm^2)
14/18
10
VND830SP
Thermal Impedance Junction Ambient Single Pulse
ZTH (C/W)
1000
100
0.5 cm2
6 cm2
10
0.1
0.0001
0.001
0.01
0.1
1
Time (s)
10
100
1000
ZTH = R TH + ZTHtp ( 1 )
where
= tp T
Thermal Parameter
Tj_1
C1
C2
C3
C4
C5
C6
R1
R2
R3
R4
R5
R6
Pd1
Tj_2
C1
C2
R1
R2
Pd2
T_amb
Area/island (cm2)
R1 (C/W)
R2 (C/W)
R3( C/W)
R4 (C/W)
R5 (C/W)
R6 (C/W)
C1 (W.s/C)
C2 (W.s/C)
C3 (W.s/C)
C4 (W.s/C)
C5 (W.s/C)
C6 (W.s/C)
0.5
0.15
0.8
0.7
0.8
12
37
0.0006
2.10E-03
0.013
0.3
0.75
3
22
15/18
VND830SP
DIM.
MIN.
A
A (*)
A1
B
B (*)
C
C (*)
D
D1
E
E2
E2 (*)
E4
E4 (*)
e
F
F (*)
H
H (*)
h
L
L (*)
(*)
inch
TYP
3.35
3.4
0.00
0.40
0.37
0.35
0.23
9.40
7.40
9.30
7.20
7.30
5.90
5.90
MAX.
MIN.
3.65
3.6
0.10
0.60
0.53
0.55
0.32
9.60
7.60
9.50
7.60
7.50
6.10
6.30
0.132
0.134
0.000
0.016
0.014
0.013
0.009
0.370
0.291
0.366
0.283
0.287
0.232
0.232
1.35
1.40
14.40
14.35
0.049
0.047
0.543
0.545
1.80
1.10
8
8
0.047
0.031
0
2
1.27
TYP.
MAX.
0.144
0.142
0.004
0.024
0.021
0.022
0.0126
0.378
0.300
0.374
300
0.295
0.240
0.248
0.050
1.25
1.20
13.80
13.85
0.50
0.053
0.055
0.567
0.565
0.002
1.20
0.80
0
2
0.070
0.043
8
8
0.10 A B
10
E2
SEATING
PLANE
e
DETAIL A
0.25
E4
D
= D1 =
=
=
SEATING
PLANE
A
F
A1
A1
L
DETAIL A
P095A
16/18
11
VND830SP
PowerSO-10 SUGGESTED PAD LAYOUT
14.6-14.9
CASABLANCA
B
10.8- 11
MUAR
6.30
C
A
0.67-0.73
1
9.5
10
9
2
3
0.54-0.6
8
7
6
4
5
1.27
50
50
1000
1000
532
532
10.4 16.4
4.9 17.2
C ( 0.1)
0.8
0.8
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C ( 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
600
600
330
1.5
13
20.2
24.4
60
30.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 ( 0.1)
P
D ( 0.1/-0)
D1 (min)
F ( 0.05)
K (max)
P1 ( 0.1)
24
4
24
1.5
1.5
11.5
6.5
2
End
Start
Top
cover
tape
No components
Components
No components
500mm min
Empty components pockets
saled with cover tape.
500mm min
17/18
VND830SP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2002 STMicroelectronics - Printed in ITALY- All Rights Reserved.
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18/18