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In a sandwich of two semiconductors, e.g. AlGaAs-GaAs, in the conduction zone one can have
an effective potential well. When V0 is very large, we have the limit of the infinite potential well.
Otherwise we have a finite potential well.
The Finite Potential Well
V0
V (x) =
0
V0
x < L2
L2 x
x > L2
L
2
2mE
~2
Note in regions II and III, total E = P E + KE = V0 + KE, but E < V0 hence KE < 0!
The potential is symmetric w.r.t. to x = 0 expect symmetric (even-parity) and antisymmetric (odd-parity) states
Even parity solutions
Consider even-parity solutions only: I (x) = B cos kx. Apply general conditions on at x =
L/2:
continuous at x = L/2: I (L/2) = II (L/2) B cos (kL/2) = C exp (L/2)
2mV0
~2
V0 E
RHS: y() = k = k2 1 =
= 02 1
E
kL
2
> 0,
when E V0
02
2
1
.
When E % V0 % 0
Odd-parity solutions
Consider odd-parity solutions only: I (x) = B sin kx, proceed as before.
02
2
1 & 0.
The quantisation
Comments:
The even-parity solutions are determined when the curve y = tan intersects the curve
y = k . The odd-parity solutions are determined when the curve y = cot intersects the
2 k2
curve y = k . The intersection points determine k and hence E = ~2m
.
larger V0 more bound states; smaller V0 less bound states
there is always at least one (symmetric) bound state, even in a very shallow well (V0 & 0).
the wavenumber and energy of the nth state is less than in the IPW for which the wavenumn
bers kn = n
L , or n = 2 , n = 1, 3, 5, ... for symmetric states, n = 2, 4, 6, ... for antisymmetric states.
when 0 <
V0 <
2 ~2
2mL2
Infinite well:
(x) confined to the well
kn = n
L
infinite tower of states
no unbound states
Finite well:
(x) spreads out beyond the well
kn and energies lower
finite tower of states
unbound states when E > V0
The energy levels in the FPW are lower because the wavefunction spreads out (by penetrating
the classically forbidden region) and therefore reduces its KE.
Quantum Tunnelling
Further reading: