ELECTRONICS AND COMMUNICATIONS ENGINEERING: MATERIALS AND COMPONENTS sec.

2
1.

In crystalline solids, atoms are stacked in a regular manner.

A.

2.

True

B.

False

The temperature below which certain materials are antiferromagnetic and above which they are
paramagnetic is called

A.

Weiss temperature

B.

Curie temperature

C.
D.

Neel temperature

None of the above

3. In metals, the average drift velocity of electron per unit field is called mobility.
A.

4.

True

B.

False

Ferrites have

A.
B.

a low copper loss

low eddy current loss

C.

low resistivity

D.

higher specific gravity compared to iron

Resistivity of ferrites is very high as compared to that of iron. Hence eddy curretns are much
less.
In intrinsic semiconductors, the number of free electrons is equal to the number of mobile holes.

5.

A.

True

B.

False

When a material becomes a superconductor, its resistivity becomes

A.

very small

zero

B.
C.

about 10% of normal value

D.

about 20% of normal value

A superconductor has zero resistance.

7.

In a piezoelectric crystal, the application of mechanical force will cause

A.

plastic deformation of crystal

magnetic dipoles in the crystal

B.
C.

electrical polarization in the crystal

D.

shift in Fermi level

Piezoelectric materials permit conversion of mechanical force into electrical energy.

8.

Consider the following statement

If an electric field is applied to an n type semiconductor bar, the electrons and holes move in
opposite directions due to their opposite charges. The net currents is
1.

both due to electrons and holes with electrons as majority carriers

2.

sum of hole and electron currents

3.

difference between electron and hole currents.

Which of above statements are correct?

A.
B.

1 only
1 and 2

C.

2 only

D.

3 only

The net current is sum of currents due to holes and electrons.

In n type materials, electrons are majority carriers.

9.

As the temperature of a pure silicon specimen is increased

A.

the number of free electrons increases

B.

the number of holes decreases

C.

the number of holes increases

D.

the number of free electrons and holes increases

10. Assertion (A): In many materials, dielectric polarization causes mechanical distortion.
Reason (R): If dielectric polarization causes mechanical distortion then mechanical distortion must
cause dielectric polarization.
A.

Both A and R are true and R is correct explanation of A

B.

Both A and R are true but R is not correct explanation of A

C.
D.

A is true but R is false

A is false but R is true

11.Semi conducting materials are all

A.

elements

B.

compounds

C.
D.

elements or compounds

elements or mixtures

Many compounds also show semiconducting properties.

12. Silicon and germanium atoms combine orderly into array of atoms located in repetitive
geometric pattern. This pattern is called

A.
B.

crystal

covalent bond

C.

molecule

D.

valence bond

13. In a pure sample of silicon

A.

the number of holes and free electrons is always equal

B.

the number of free electrons is more than the number of holes

C.

the number of free electrons and holes is equal at low temperature

D.

the number of free electrons is less than number of holes

14 Orbital magnetic dipole moment is due to the motion of electron in its orbit around nucleus.
A.

True

B.

False

15. Assertion (A): r can be determined experimentally by measuring the capacitance of a parallel
plate capacitor with and without the dielectric.

Reason (R): Capacitance of a parallel plate capacitor =

A.

Both A and R are true and R is correct explanation of A

B.

Both A and R are true but R is not correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

16. In a homogeneous magnetic field H of a solenoid, the core carries a magnetic dipole moment M
per unit volume equal to

A.

0 H

B.

r H
(r - 1) H

C.
D.

or H

17. The field pattern of a solenoid is similar to that of bar magnet.

A.

True

B.

False

18. Assertion (A): In a parallel plate capacitor having area of plate 1 m2 and plate separation 1 m,

the capacitance C and resistance R are given by C = 0'r and R =

frequency, r' and r" are real and imaginary parts of dielectric constant.

where is

Reason (R): The imaginary part of electric constant is responsible for dielectric losses.
A.

Both A and R are true and R is correct explanation of A

B.

Both A and R are true but R is not correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

19. Assertion (A): Silicon is the most favoured semiconductor material.

Reason (R): PIV for silicon diode is more than that for germanium diode.

A.

Both A and R are true and R is correct explanation of A

B.

Both A and R are true but R is not correct explanation of A

A is true but R is false

C.
D.

A is false but R is true

Higher PIV for silicon is a definite advantage.

20. Assertion (A): When cathode temperature is increased from 2500 K to 2550 K, thermionic
emission current may increase by about 50%.

Reason (R): Thermionic emission current T2 e-Ew/kT.

A.

Both A and R are true and R is correct explanation of A

B.

Both A and R are true but R is not correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

21. In molecules of ionic crystals, orientation polarization is zero.

A.

True

B.

False

22. Assertion (A): CO2 has no resultant dipole moment but CO has a dipole moment.
Reason (R): The structure of CO2 is O = C = O.

A.

Both A and R are true and R is correct explanation of A

B.

Both A and R are true but R is not correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

23. For a photoconductor with equal electron and hole mobilities and perfect ohmic contacts at the
ends, an increase in intensity of optical illumination results in

A.

a change in o.c voltage

B.

a change in s.c current

decrease in resistance

C.
D.

increase in resistance

It is the characteristic of a photoconductor that its resistance decreases with increase in

illumination.

24. A permeable substance is one

A.

which is strong magnet

B.

which is a weak magnet

C.

which is a good conductor

D.

through which magnetic lines of force can pass easily

25. When subjected to alternating stresses, an insulating material is characterised by complex

dielectric constant 'r - j"r . In such materials, the dielectric losses under alternating stress is
proportional

A.

"r

B.

both 'r and "r

C.

'r

D.

("r)2

The imaginary part of r gives rise to absorption of energy.

26. The classes of solid dielectrics are

A.

A, B, C, D, E, F, H

B.

AEBFHCD

C.
D.

YAEBFHC

AEBFHC

27. A 200 turn coil has a self inductance of 10 mH. If the number of turns is doubled, all other
quantities remaining the same, the self inductance will be

A.

2.5 mH

B.

5 mH

C.

20 mH

D.

40 mH

Inductance is proportional to square of number of turns.

28. A material which is lightly repelled by a magnetic field is known as

A.

diamagnetic material

B.

non-magnetic material

C.

ferromagnetic material

D.

paramagnetic material

29. Which of the following is the poorest conductor of electricity?

A.
B.

Aluminium
Nichrome

C.

Copper

D.

All of the above

30. The magnetic moment in units of Bohr magneton of a ferrous ion in any ferrite is

A.
C.

zero
4

B.

D.

31. The relationship of hysteresis loss to maximum flux density was first determined by

A.

C. Steinmetz

B.

G.R. Kirchoff

C.

Mr. Laplace

D.

Mr. Ampere

32. In metals the thermal conductivity K and electrical conductivity are related as (K/T) = L, L is
known as

A.
B.

Lattice constant
Lorentz number

C.

Lanevin function

D.

Larmor number

33. Assertion (A): If WF is Fermi energy, v is velocity of electron and m is mass of electron,
then

Reason (R): Conductivity of a metal depends on temperature and impurity concentration.

A.
B.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

34. Dielectric constant of transformer oil is about

A.

B.

C.

10

D.

20

35. Assertion (A): When an electron is revolving in its orbit and magnetic field is also present, the
angular frequency of electron will be affected by the magnetic field.
Reason (R): In the case of electron revolving in its orbit in the presence of magnetic field, the
orbital magnetic dipole moment is not affected by the presence of magnetic field.

A.

Both A and R are true and R is correct explanation of A

B.

Both A and R are true but R is not correct explanation of A

A is true but R is false

C.
D.

A is false but R is true

Orbital magnetic moment is equal to (-e/2m).

36. In carbon resistor colour code, the third band is red. It indicates

A.

two zeros

B.

three zeros

C.

multiplier is 0.01

D.

multiplier is 0.1

37. Rochelle salt is a ferroelectric material.

A.

True

B.

False

38. Paramagnetic materials have permanent magnetic dipoles but interaction between neighbouring
dipoles is negligible.

A.

True

B.

False

39. Assertion (A): If difference between static and optical dielectric constant is high, the mechanical
compressiblity of that material is also high.
Reason (R): For soft ions, ionic polarization per unit field is higher than that of hard ions.

A.

Both A and R are true and R is correct explanation of A

B.

Both A and R are true but R is not correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

40. Assertion (A): In Figure, the intercept of the line on y-axis is equal to N (e +
number of atoms/m3,
Reason (R):

A.

e and i are independent of temperature.

Both A and R are true and R is correct explanation of A

B.

Both A and R are true but R is not correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

The intercept on y-axis equals N (e +

i), where N is

e is electronic polarizability and i is ionic polarizability.

This intercept is constant because

i).

e and i are independent of temperature.

41. Assertion (A): The optical dielectric constant (i.e., r at optical frequencies)of ionic dielectrics is
less than static dielectric constant.
Reason (R): At optical frequencies, Pi = 0.

A.

Both A and R are true and R is correct explanation of A

B.

Both A and R are true but R is not correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

42. A piece of iron is placed in a magnetic field

A.
B.

the magnetic field will not be affected

the magnetic lines of force will bend to pass through the piece

C.

the magnetic lines of force will bend away from the piece

D.

any of the above depending on type of iron

43. Assertion (A): Magnetism can be explained by the theory of magnetic domains.
Reason (R): The existence of magnetic domains is evident from the Bitter powder patterns.

A.
B.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

44. Ferromagnetic materials

A.

shows spontaneous magnetisation below a certain temperature

B.

have resistivity very high as compared to that of iron

C.

can be used even at microwave frequencies

D.

all of the above

45. In a specimen of ferromagnetic material, as the flux density is increased from zero to 2.5 T, r will

A.

increase

B.

decrease

C.

first decrease then increase

D.

first increase then decrease

46. Assertion (A): Relaxation time and mean time between collisions are equal when scattering is
isotropic.
Reason (R): Mean free path of an electron , velocity of electron v and mean time between
collisions c are related as = vTc.

A.
B.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

47. Assertion (A): Copper is a monoatomic solid.

Reason (R): In a metal the valence electrons belong to all atoms.

A.
B.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

48. The heat developed per m3 per second (W) in a conductor having a conductivity and a field E is

A.
B.

C.

D.

W = E2

W = E

W=
W = (E)0.5

49. The number of valence electrons in acceptor impurity are

A.
C.

5
3

B.

D.

50. If q is charge on an electron, R is radius of electron orbit and is angular velocity of electron
rotation, the magnetic dipole moment of electron in orbit is

A.

0.5 qR

B.

0.5 q22R2

C.
D.

0.5 qR2

0.5 q2R