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INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
3 Description
The INA333 device is a low-power, precision
instrumentation amplifier offering excellent accuracy.
The versatile 3-operational amplifier design, small
size, and low power make it ideal for a wide range of
portable applications.
2 Applications
Bridge Amplifiers
ECG Amplifiers
Pressure Sensors
Medical Instrumentation
Portable Instrumentation
Weigh Scales
Thermocouple Amplifiers
RTD Sensor Amplifiers
Data Acquisition
PACKAGE
INA333
VSSOP (8)
3.00 mm 3.00 mm
WSON (8)
3.00 mm 3.00 mm
Simplified Schematic
V+
7
VIN-
150kW
150kW
A1
1
A3
RG
VOUT
50kW
8
RFI Filtered Inputs
VIN+
150kW
150kW
A2
REF
G=1+
100kW
RG
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
7
Device Support......................................................
Documentation Support ........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
21
22
22
22
23
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (October 2008) to Revision C
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
INA333
www.ti.com
DRG Package
8-Pin WSON
Top View
RG
RG
VIN-
V+
VIN+
VOUT
V-
REF
RG
VIN-
VIN+
V-
Exposed
Thermal
Die Pad
on
Underside
RG
V+
VOUT
REF
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
REF
RG
1, 8
Reference input. This pin must be driven by low impedance or connected to ground.
Gain setting pins. For gains greater than 1, place a gain resistor between pins 1 and 8.
V+
Positive supply
Negative supply
VIN+
Positive input
VIN
Negative input
VOUT
Output
INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
Supply voltage
MAX
(2)
(V) 0.3
(V+) + 0.3
40
Junction temperature, TJ
Storage temperature, Tstg
(2)
(3)
Continuous
Operating temperature, TA
(1)
UNIT
65
150
150
150
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be
current limited to 10 mA or less.
Short-circuit to ground.
(1)
(2)
Electrostatic discharge
(1)
UNIT
4000
1000
200
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
MAX
UNIT
Supply voltage
1.8
5.5
Specified temperature
40
125
DGK (VSSOP)
DRG (WSON)
UNIT
8 PINS
8 PINS
RJA
169.5
60
C/W
RJC(top)
62.7
60
C/W
RJB
90.3
50
C/W
JT
7.6
C/W
JB
88.7
C/W
RJC(bot)
C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
INA333
www.ti.com
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT (1)
Offset voltage, RTI (2)
VOSI
PSR
10 25/G
vs temperature
TA = 40C to +125C
vs power supply
1.8 V VS 5.5 V
1 5/G
Long-term stability
Turnon time to specified VOSI
See
TA = 40C to +125C
25 75/G
0.1 0.5 / G
V/C
5 15/G
V/V
(3)
Impedance
ZIN
Differential
100 || 3
ZIN
Common-mode
100 || 3
VCM
VO = 0 V
Common-mode rejection
DC to 60 Hz
G=1
80
90
dB
G = 10
100
110
dB
G = 100
100
115
dB
G = 1000
100
115
dB
CMR
(V) + 0.1
G || pF
G || pF
(V+) 0.1
IB
vs temperature
70
TA = 40C to +125C
See Figure 26
TA = 40C to +125C
See Figure 28
IOS
vs temperature
200
pA
pA/C
50
200
pA
pA/C
eNI
G = 100, RS = 0 , f = 10 Hz
50
nV/Hz
G = 100, RS = 0 , f = 100 Hz
50
nV/Hz
G = 100, RS = 0 , f = 1 kHz
50
nV/Hz
G = 100, RS = 0 , f = 0.1 Hz to 10 Hz
iN
VPP
f = 10 Hz
100
f = 0.1 Hz to 10 Hz
fA/Hz
pAPP
GAIN
G
Gain equation
1 + (100 k/RG)
Range of gain
V/V
1000
V/V
G=1
0.01%
0.1%
G = 10
0.05%
0.25%
G = 100
0.07%
0.25%
G = 1000
0.25%
0.5%
Gain vs temperature, G = 1
TA = 40C to +125C
ppm/C
TA = 40C to +125C
15
50
ppm/C
Gain nonlinearity
RL = 10 k
VS = 5.5 V, RL = 10 k
10
ppm
OUTPUT
(1)
(2)
(3)
(4)
Short-circuit current
Continuous to common
See Figure 29
50
mV
500
pF
40, +5
mA
INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
www.ti.com
TEST CONDITIONS
MIN
TYP
MAX
UNIT
FREQUENCY RESPONSE
Bandwidth, 3dB
SR
tS
tS
Slew rate
G=1
150
kHz
G = 10
35
kHz
G = 100
3.5
kHz
G = 1000
350
Hz
VS = 5 V, VO = 4-V step, G = 1
0.16
V/s
0.05
V/s
VSTEP = 4 V, G = 1
VSTEP = 4 V, G = 100
VSTEP = 4 V, G = 1
VSTEP = 4 V, G = 100
50% overdrive
50
400
60
500
75
REFERENCE INPUT
RIN
300
Voltage range
k
V+
POWER SUPPLY
Voltage range
IQ
+1.8
+5.5
0.9
2.75
75
80
Quiescent current
VIN = VS / 2
50
vs temperature
TA = 40C to +125C
TEMPERATURE RANGE
40
125
40
150
INA333
www.ti.com
-25.0
-22.5
-20.0
-17.5
-15.0
-12.5
-10.0
-7.5
-5.0
-2.5
0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
-0.10
-0.09
-0.08
-0.07
-0.06
-0.05
-0.04
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
Population
Population
VS = 5.5V
-75.0
-67.5
-60.0
-52.5
-45.0
-37.5
-30.0
-22.5
-15.0
-7.5
0
7.5
15.0
22.5
30.0
37.5
45.0
52.5
60.0
67.5
75.0
-0.50
-0.45
-0.40
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
Population
Population
VS = 5.5V
Gain = 1
VS = 1.8V
-5
Noise (1mV/div)
VOS (mV)
VS = 5V
-10
-15
-20
-25
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Time (1s/div)
VCM (V)
INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
www.ti.com
Noise (0.5mV/div)
1000
Output Noise
100
100
Current Noise
Input Noise
10
10
2
(Input Noise) +
(Output Noise)
1
0.1
Time (1s/div)
Gain = 100
10
100
1k
10k
Frequency (Hz)
0.008
Gain = 1
VS = 2.75V
0.012
0.004
0
-0.004
-0.008
-0.012
0
0.5
1.0
1.5
2.0
2.5
3.0 3.5
4.0
4.5
5.0
5.5
Time (25ms/div)
VOUT (V)
Gain = 100
Time (100ms/div)
Time (10ms/div)
INA333
www.ti.com
Gain = 100
Time (ms)
1000
0.001%
100
0.01%
0.1%
10
1
Time (100ms/div)
1000
100
10
Gain (V/V)
Gain = 1
G = 1000
Supply
60
40
Gain (dB)
Supply (1V/div)
VOUT (50mV/div)
VOUT
G = 100
G = 10
20
G=1
0
-20
-40
-60
10
Time (50ms/div)
100
10k
1k
100k
1M
Frequency (Hz)
VS = 5.5V
VS = 2.75V
G=1
VS = 0.9V
Population
CMRR (mV/V)
6
4
G = 10
2
0
-2
-4
G = 100,
G = 1000
-6
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
-8
-10
-50
-25
25
50
75
100
125
150
Temperature (C)
CMRR (mV/V)
INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
www.ti.com
140
2.0
160
G = 1000
CMRR (dB)
120
G = 100
100
80
60
G=1
40
G = 10
20
VS = 2.5V
VREF = 0
1.0
All Gains
0
-1.0
-2.0
2.5
-2.5 -2.0
0
10
100k
10k
1k
100
2.0
1.0
2.5
VS = +5V
VREF = 0
VS = 0.9V
VREF = 0
0.7
-1.0
Frequency (Hz)
3
All Gains
2
0.5
0.3
0.1
All Gains
-0.1
-0.3
-0.5
-0.7
-0.9
-0.9
0
0
-0.7
140
1.4
0.5
0.7
0.9
G = 1000
120
1.2
1.0
+PSRR (dB)
0.3
160
All Gains
0.8
0.6
100
G = 100
80
60
G = 10
40
0.4
G=1
20
0.2
0
0
10
0.1
-0.1
VS = +1.8V
VREF = 0
1.6
-0.3
-0.5
0.2
0.4
0.5
0.8
1.0
1.2
1.4
1.6
1.8
10
100
1k
10k
100k
1M
Frequency (Hz)
INA333
www.ti.com
1200
VS = 5V
140
G = 100
G = 1000
-IB
800
100
600
IB (pA)
-PSRR (dB)
120
80
+IB
1000
G = 10
60
400
VS = 0.9V
40
VS = 2.75V
200
G=1
20
0
-20
-200
0.1
10
100
1k
10k
100k
1M
-50
25
-25
Frequency (Hz)
50
75
100
125
150
Temperature (C)
200
250
180
200
160
150
120
IOS (pA)
| IB | (pA)
140
100
80
60
100
VS = 2.75V
50
0
VS = 5V
40
VS = 0.9V
-50
20
VS = 1.8V
0
0
0.5
1.0
1.5
2.0
-100
2.5
3.0
3.5
4.0
4.5
5.0
-50
-25
VCM (V)
50
75
100
125
150
Temperature (C)
(V+)
(V+) - 0.25
(V+) - 0.50
(V+) - 0.75
(V+) - 1.00
(V+) - 1.25
(V+) - 1.50
(V+) - 1.75
VS = 2.75V
70
VS = 0.9V
VS = 5V
60
50
IQ (mA)
VOUT (V)
25
(V-) + 1.75
(V-) + 1.50
(V-) + 1.25
(V-) + 1.00
(V-) + 0.75
(V-) + 0.50
(V-) + 0.25
(V-)
40
VS = 1.8V
30
20
+125C
+25C
-40C
10
0
10
20
30
40
50
60
-50
IOUT (mA)
-25
25
50
75
100
125
150
Temperature (C)
11
INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
www.ti.com
IQ (mA)
50
40
VS = 1.8V
30
20
10
0
0
1.0
3.0
2.0
4.0
5.0
VCM (V)
12
INA333
www.ti.com
7 Detailed Description
7.1 Overview
The INA333 is a monolithic instrumentation amplifier (INA) based on the precision zero-drift OPA333 (operational
amplifier) core. The INA333 also integrates laser-trimmed resistors to ensure excellent common-mode rejection
and low gain error. The combination of the zero-drift amplifier core and the precision resistors allows this device
to achieve outstanding DC precision and makes the INA333 ideal for many 3.3-V and 5-V industrial applications.
150kW
150kW
A1
1
A3
RG
VOUT
50kW
8
RFI Filtered Inputs
VIN+
150kW
150kW
A2
REF
G=1+
100kW
RG
13
INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
www.ti.com
VIN-
RFI Filter
150kW
150kW
A1
VO = G (VIN+ - VIN-)
RFI Filter
50kW
RG
G=1+
6
A3
50kW
Load VO
RFI Filter
VIN+
100kW
RG
150kW
150kW
A2
Ref
RFI Filter
INA333
4
0.1mF
V-
VO
INA333
Ref
14
INA333
www.ti.com
(1)
Table 1 lists several commonly-used gains and resistor values. The 100 k in Equation 1 comes from the sum of
the two internal feedback resistors of A1 and A2. These on-chip resistors are laser trimmed to accurate absolute
values. The accuracy and temperature coefficient of these resistors are included in the gain accuracy and drift
specifications of the INA333 device.
The stability and temperature drift of the external gain setting resistor, RG, also affects gain. The contribution of
RG to gain accuracy and drift can be directly inferred from the gain Equation 1. Low resistor values required for
high gain can make wiring resistance important. Sockets add to the wiring resistance and contribute additional
gain error (possibly an unstable gain error) in gains of approximately 100 or greater. To ensure stability, avoid
parasitic capacitance of more than a few picofarads at the RG connections. Careful matching of any parasitics on
both RG pins maintains optimal CMRR over frequency.
Table 1. Commonly-Used Gains and Resistor Values
DESIRED GAIN
(1)
RG ()
(1)
NEAREST 1% RG ()
NC
100k
100k
NC
25k
24.9k
10
11.1k
11k
20
5.26k
5.23k
50
2.04k
2.05
100
1.01k
1k
200
502.5
499
500
200.4
200
1000
100.1
100
NC denotes no connection. When using the SPICE model, the simulation will not converge unless a
resistor is connected to the RG pins; use a very large resistor value.
15
INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
www.ti.com
VIN-
V+
RG
VO
INA333
100mA
1/2 REF200
Ref
VIN+
100W
OPA333
10mV
Adjustment Range
10kW
100W
100mA
1/2 REF200
V-
16
INA333
www.ti.com
Microphone,
Hydrophone,
etc.
INA333
47kW
47kW
Thermocouple
INA333
10kW
INA333
17
INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
www.ti.com
With single-supply operation, VIN+ and VIN must both be 0.1 V more than ground for linear operation. For
instance, the inverting input cannot be connected to ground to measure a voltage connected to the noninverting
input.
To show the issues affecting low voltage operation, consider the circuit in Figure 35. It shows the INA333 device
operating from a single 3-V supply. A resistor in series with the low side of the bridge assures that the bridge
output voltage is within the common-mode range of the amplifier inputs.
+3V
3V
2V - DV
RG
300W
VO
INA333
Ref
2V + DV
1.5V
150W
R1
(1)
(1)
R1 creates proper common-mode voltage, only for low-voltage operationsee Single-Supply Operation.
18
INA333
www.ti.com
Gain = 100
Gain = 1
Time (25ms/div)
Time (100ms/div)
Gain = 100
Gain = 1
Time (10ms/div)
Time (100ms/div)
19
INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
www.ti.com
10 Layout
10.1 Layout Guidelines
Attention to good layout practices is always recommended. Keep traces short and, when possible, use a printedcircuit-board (PCB) ground plane with surface-mount components placed as close to the device pins as possible.
Place a 0.1-F bypass capacitor closely across the supply pins. These guidelines should be applied throughout
the analog circuit to improve performance and provide benefits such as reducing the electromagneticinterference (EMI) susceptibility.
Instrumentation amplifiers vary in the susceptibility to radio-frequency interference (RFI). RFI can generally be
identified as a variation in offset voltage or DC signal levels with changes in the interfering RF signal. The
INA333 device has been specifically designed to minimize susceptibility to RFI by incorporating passive RC
filters with an 8-MHz corner frequency at the VIN+ and VIN inputs. As a result, the INA333 device demonstrates
remarkably low sensitivity compared to previous generation devices. Strong RF fields may continue to cause
varying offset levels, however, and may require additional shielding.
Bypass
Capacitor
RG
RG
VIN-
V-IN
V+
VIN+
V+IN
VO
VOUT
V-
Ref
GND
V+
Bypass
Capacitor
V-
GND
20
INA333
www.ti.com
RELATED PRODUCTS
For monolithic logarithmic amplifiers (such as LOG112 or LOG114) see the link in footnote 1.
Vout
VM1
+
7
VCC
VCC
Ref
RG V+
U5 OPA369
Vdiff
Vref+
1/2 of matched
monolithic dual
NPN transistors
(example: MMDT3904)
R8 10k
Out
U1 OPA335
VCC
U1 INA333
VCC
1
Vref+
Vref+
Input I 10n
RG V-
C1 1n
Vref+
R3 14k
VoA2
3
Vref+
uC Vref/2 2.5
1
+
uC Vref/2 2.5
V1 5
U6 OPA369
VCC
Rset 2.5M
(1) The following link launches the TI logarithmic amplifiers web page: Logarithmic Amplifier Products Home Page
Figure 41. Low-Power Log Function Circuit for Portable Battery-Powered Systems
(Example Glucose Meter)
21
INA333
SBOS445C JULY 2008 REVISED DECEMBER 2015
www.ti.com
R1
2kW
RWa
3W
EMU21 RTD3
Pt100 RTD
VT+
U2
OPA333
RWb
3W
RTD+
VT 25
2 _
3V
VT-
RTD-
Mon+
RGAIN
100kW
Mon-
U1 INA333
RG V-
VDIFF
Out
Ref
8
RG V+
RWc
4W
Temp (C)
(Volts = C)
RZERO
100W
PGA112
MSP430
+
7
VREF+
3V
VRTD
RWd
3W
RTD Resistance
(Volts = Ohms)
+
A
IREF1
IREF2
3V
U1 REF3212
VREF
3V
VREF
VREF
Use BF861A
EN
In
OUTS
GNDF GNDS
C7
470nF
OUTF
T3 BF256A
OPA3331 OPA333
Use BF861A
3V
T1 BF256A
+
U3
OPA333
3V
-
V4 3
RSET1
2.5kW
RSET2
2.5kW
RWa, RWb, RWc, and RWd simulate wire resistance. These resistors are included to show the four-wire sense technique immunity to line
mismatches. This method assumes the use of a four-wire RTD.
Figure 42. Four-Wire, 3-V Conditioner for a PT100 RTD With Programmable Gain Acquisition System
To download a compressed file that contains the TINA-TI simulation file for this circuit, click the following link:
PT100 RTD.
11.3 Trademarks
All trademarks are the property of their respective owners.
22
INA333
www.ti.com
11.5 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
23
www.ti.com
8-Apr-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Eco Plan
Lead/Ball Finish
(2)
(6)
(3)
Op Temp (C)
Device Marking
(4/5)
INA333AIDGKR
ACTIVE
VSSOP
DGK
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
I333
INA333AIDGKRG4
ACTIVE
VSSOP
DGK
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I333
INA333AIDGKT
ACTIVE
VSSOP
DGK
250
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
I333
INA333AIDGKTG4
ACTIVE
VSSOP
DGK
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I333
INA333AIDRGR
ACTIVE
SON
DRG
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I333A
INA333AIDRGT
ACTIVE
SON
DRG
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I333A
(1)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
Samples
www.ti.com
8-Apr-2015
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA333 :
NOTE: Qualified Version Definitions:
Addendum-Page 2
8-Apr-2015
Device
INA333AIDGKR
VSSOP
DGK
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
INA333AIDGKT
VSSOP
DGK
250
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
INA333AIDRGR
SON
DRG
3000
330.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
INA333AIDRGT
SON
DRG
250
180.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
Pack Materials-Page 1
8-Apr-2015
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
INA333AIDGKR
VSSOP
DGK
2500
366.0
364.0
50.0
INA333AIDGKT
VSSOP
DGK
250
366.0
364.0
50.0
INA333AIDRGR
SON
DRG
3000
367.0
367.0
35.0
INA333AIDRGT
SON
DRG
250
210.0
185.0
35.0
Pack Materials-Page 2
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