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DATA SHEET
TDA6107JF
Triple video output amplifier
Product specification 2002 Oct 18
Philips Semiconductors Product specification
ORDERING INFORMATION
TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
TDA6107JF DBS9MPF plastic DIL-bent-SIL medium power package with fin; 9 leads SOT111-1
2002 Oct 18 2
Philips Semiconductors Product specification
BLOCK DIAGRAM
MIRROR 1 MIRROR 5
TDA6107JF CASCODE 1
3×
MIRROR 4
Voc(3),
CURRENT 9, 8, 7
1× Voc(2),
SOURCE
Voc(1)
1×
THERMAL Rf
PROTECTION VIP DIFFERENTIAL
CIRCUIT REFERENCE STAGE
Vi(1),
Vi(2), 1, 2, 3 5
MIRROR 3 Io(m)
Vi(3) Ri
Ra
3× CASCODE 2
MIRROR 2
4
MBL525
PINNING
MBL524
2002 Oct 18 3
Philips Semiconductors Product specification
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages measured with respect to pin 4
(ground); currents as specified in Fig.1; unless otherwise specified.
SYMBOL PARAMETER MIN. MAX. UNIT
VDD supply voltage 0 250 V
Vi input voltage at pins 1 to 3 0 12 V
Vo(m) measurement output voltage 0 6 V
Voc cathode output voltage 0 VDD V
Iocsm(L) LOW non-repetitive peak cathode output current at a flashover 0 3 A
discharge of 100 µC
Iocsm(H) HIGH non-repetitive peak cathode output current at a flashover 0 6 A
discharge of 100 nC
Tstg storage temperature −55 +150 °C
Tj junction temperature −20 +150 °C
Ves electrostatic handling voltage
Human Body Model (HBM) − 3000 V
Machine Model (MM) − 300 V
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see “Handling MOS Devices” ).
QUALITY SPECIFICATION
Quality specification “SNW-FQ-611 part D” is applicable and can be found in the “Quality reference Handbook”.
The handbook can be ordered using the code 9397 750 00192.
2002 Oct 18 4
Philips Semiconductors Product specification
THERMAL CHARACTERISTICS
Thermal protection
The internal thermal protection circuit gives a decrease of
MBH989 the slew rate at high temperatures: 10% decrease at
8
handbook, halfpage 130 °C and 30% decrease at 145 °C (typical values on the
Ptot
spot of the thermal protection circuit).
(W)
(1)
6
(2) outputs
handbook, halfpage
2
5 K/W
0 6 K/W
−40 0 40 80 120 160
Tamb (°C) fin MGK279
2002 Oct 18 5
Philips Semiconductors Product specification
CHARACTERISTICS
Operating range: Tj = −20 to +150 °C; VDD = 180 to 210 V. Test conditions: Tamb = 25 °C; VDD = 200 V;
Vo(c1) = Vo(c2) = Vo(c3) = 1⁄2VDD; CL = 10 pF (CL consists of parasitic and cathode capacitance); Rth(h-a) = 18 K/W
(measured in test circuit of Fig.8); unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Iq quiescent supply current 5.6 6.6 7.6 mA
Vref(int) internal reference voltage − 2.5 − V
(input stage)
Ri input resistance − 3.6 − kΩ
G gain of amplifier 47.5 51.0 55.0
∆G gain difference −2.5 0 +2.5
VO(oc) nominal output voltage at Ii = 0 µA 116 129 142 V
pins 7, 8 and 9 (DC value)
∆VO(oc)(offset) differential nominal output Ii = 0 µA − 0 5 V
offset voltage between
pins 7 and 8, 8 and 9 and
9 and 7 (DC value)
∆Vo(c)(T) output voltage temperature − 10 − mV/K
drift at pins 7, 8 and 9
∆Vo(c)(T)(offset) differential output offset − 0 − mV/K
voltage temperature drift
between pins 7 and 8,
8 and 9 and 7 and 9
Io(m)(offset) offset current of measurement Io(c) = 0 µA; −50 − +50 µA
output (for three channels) 1.5 V < Vi < 5.5 V;
1.8 V < Vo(m) < 6 V
∆Io(m)/∆Io(c) linearity of current transfer −100 µA < Io(c) < 100 µA; −0.9 −1.0 −1.1
(for three channels) 1.5 V < Vi < 5.5 V;
1.8 V < Vo(m) < 6 V
−100 µA ≤ Io(c) < 10 mA; −0.9 −1.0 −1.1
1.5 V < Vi < 5.5 V;
1.8 V < Vo(m) < 4 V
Io(c)(max) maximum peak output current 50 V < Vo(c) < VDD − 50 V − 20 − mA
(pins 7, 8 and 9)
Vo(c)(min) minimum output voltage Vi = 7.0 V; at Io(c) = 0 mA; − − 10 V
(pins 7, 8 and 9) note 1
Vo(c)(max) maximum output voltage Vi = 1.0 V; at Io(c) = 0 mA; VDD − 15 − − V
(pins 7, 8 and 9) note 1
BS small signal bandwidth Vo(c) = 60 V (p-p) − 5.5 − MHz
(pins 7, 8 and 9)
BL large signal bandwidth Vo(c) = 100 V (p-p) − 4.5 − MHz
(pins 7, 8 and 9)
tPco cathode output propagation Vo(c) = 100 V (p-p) square − 60 − ns
time 50% input to 50% output wave; f <1 MHz;
(pins 7, 8 and 9) tr = tf = 40 ns
(pins 1, 2 and 3);
see Figs 6 and 7
2002 Oct 18 6
Philips Semiconductors Product specification
2002 Oct 18 7
Philips Semiconductors Product specification
MBH988
200
handbook, halfpage
Vo(c)
(V)
160
129
120
80
40
0
0 2 2.5 4 6
Vi (V)
2002 Oct 18 8
Philips Semiconductors Product specification
4.04
Vi
(V)
3.08
t
2.12
tst
Ov (in %) 151
150
140
149
Vo(c)
(V)
100
60
50
t
to(r)
tPco MGK280
Fig.6 Output voltage (pins 7, 8 and 9) rising edge as a function of the AC input signal.
2002 Oct 18 9
Philips Semiconductors Product specification
4.04
Vi
(V)
3.08
t
2.12
tst
150
140
Vo(c)
(V)
100
Ov (in %)
51
60
50
49
t
to(f)
tPco MGK281
Fig.7 Output voltage (pins 7, 8 and 9) falling edge as a function of the AC input signal.
2002 Oct 18 10
Philips Semiconductors Product specification
Bandwidth
The addition of the flash resistor produces a decreased
bandwidth and increases the rise and fall times; see
“Application Note AN96072”.
2002 Oct 18 11
Philips Semiconductors Product specification
22 µF 1
Ri Vof
Vi(1) Voc(1) 9
C2 1
Ra
Iom C10 R1
22 nF 6.8 pF 2 MΩ
C9
3.2 pF probe 1
C11 R2
J2 136 pF 100 kΩ
C3 Rf
22 µF 2
Ri Vof
Vi(2) Voc(2) 8
C4 2
Ra
Iom C13 R3
22 nF 6.8 pF 2 MΩ
C12
3.2 pF probe 2
C14 R4
J3 136 pF 100 kΩ
C5 Rf
22 µF 3
Ri Vof
Vi(3) Voc(3) 7
C6 3
Ra
Iom C16 R5
22 nF 6.8 pF 2 MΩ
C15
3.2 pF probe 3
C17 R6
VIP 136 pF 100 kΩ
REFERENCE
5
TDA6107JF Vo(m)
4
4V
MBL526
Current sources J1, J2 and J3 are to be tuned so that Vo(c) of pins 9, 8 and 7 is set to 100 V.
2002 Oct 18 12
Philips Semiconductors Product specification
INTERNAL CIRCUITRY
4 6
to cascode
stage
to black current
TDA6107JF measurement circuit
1, 2, 3
(1)
esd
from
input flash
circuit
esd 7, 8, 9
esd
to black current Vbias
from esd
measurement circuit
from input
control circuit
circuit
5 from black
current
measurement esd
esd 6.8 V circuit
from
control
circuit to black current
to black current measurement circuit
measurement circuit
MBL527
(1) All pins have an energy protection for positive or negative overstress situations.
2002 Oct 18 13
Philips Semiconductors Product specification
PACKAGE OUTLINE
DBS9MPF: plastic DIL-bent-SIL medium power package with fin; 9 leads SOT111-1
D1
q A2
P P1 Q
A3
q2
q1
A4
E
seating plane
pin 1 index
L c
1 9
Z e b e2
b2
b1
w M θ
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
92-11-17
SOT111-1
95-03-11
2002 Oct 18 14
Philips Semiconductors Product specification
SOLDERING The total contact time of successive solder waves must not
exceed 5 seconds.
Introduction to soldering through-hole mount
packages The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
This text gives a brief insight to wave, dip and manual
specified maximum storage temperature (Tstg(max)). If the
soldering. A more in-depth account of soldering ICs can be
printed-circuit board has been pre-heated, forced cooling
found in our “Data Handbook IC26; Integrated Circuit
may be necessary immediately after soldering to keep the
Packages” (document order number 9398 652 90011).
temperature within the permissible limit.
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit Manual soldering
board.
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
Soldering by dipping or by solder wave
2 mm above it. If the temperature of the soldering iron bit
The maximum permissible temperature of the solder is is less than 300 °C it may remain in contact for up to
260 °C; solder at this temperature must not be in contact 10 seconds. If the bit temperature is between
with the joints for more than 5 seconds. 300 and 400 °C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING WAVE
DBS, DIP, HDIP, SDIP, SIL suitable suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2002 Oct 18 15
Philips Semiconductors Product specification
DEFINITIONS DISCLAIMERS
Short-form specification The data in a short-form Life support applications These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes in the products -
Characteristics sections of the specification is not implied. including circuits, standard cells, and/or software -
Exposure to limiting values for extended periods may described or contained herein in order to improve design
affect device reliability. and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information Applications that are
communicated via a Customer Product/Process Change
described herein for any of these products are for
Notification (CPCN). Philips Semiconductors assumes no
illustrative purposes only. Philips Semiconductors make
responsibility or liability for the use of any of these
no representation or warranty that such applications will be
products, conveys no licence or title under any patent,
suitable for the specified use without further testing or
copyright, or mask work right to these products, and
modification.
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2002 Oct 18 16
Philips Semiconductors Product specification
NOTES
2002 Oct 18 17
Philips Semiconductors Product specification
NOTES
2002 Oct 18 18
Philips Semiconductors Product specification
NOTES
2002 Oct 18 19
Philips Semiconductors – a worldwide company
Contact information
Printed in The Netherlands 753504/02/pp20 Date of release: 2002 Oct 18 Document order number: 9397 750 10545
This datasheet has been download from:
www.datasheetcatalog.com