Professional Documents
Culture Documents
and Devices
Seppo Honkanen, Brian R. West,
and Sanna Yliniemi
Optical Sciences Center
University of Arizona
Acknowledgements
David Geraghty, Jose Castro
ECE, University of Arizona
Nasser Peyghambarian, Axel Schulzgen, Pratheepan Madasamy, Mike
Morrell and Jason Auxier
Ray Kostuk, James Carriere, Jesse Frantz
OSC, University of Arizona
Nicholas Borelli
Corning, Inc.
Joseph Hayden
Schott North America
Funding: Arizona State Photonics Initiative, NSF, Corning, BAE Systems
GOMD Meeting, Florida, November 12, 2004
Overview
Ion Exchange
Historical Background
Historical Background
First known use coloring of earthenware
(6th century Egypt)
surface-mechanical properties of
structural glass (1913, 1960s)
Historical Background
First published results of optical
exchanged waveguides
Ion Exchange
Waveguide Characteristics
Low attenuation (<0.05 dB/cm)
Low birefringence over a range of widths (n ~ 10-5)
Excellent mode matching to optical fiber (circular
cross-section, small index change)
Glass substrate is a good host for active ions, and is
compatible with a variety of overlayers (lasers,
sensors, etc.)
Economical (no complicated material growth)
Tolerant to errors in lithography (diffusion)
GOMD Meeting, Florida, November 12, 2004
State-of-the-art Ion-Exchanged
Waveguide Devices
1 x N Splitters by Teem Photonics (France)
State-of-the-art Ion-Exchanged
Waveguide Devices
Amplified splitter by Teem Photonics (France)
Ion Exchange
Processes
10
Ion Exchange
Processes
Thermal exchange from a molten salt
Ag+
Na+
11
Ion Exchange
Processes
Ag+
Na+
12
Ion Exchange
Processes
Field-assisted burial
Va
Na+
Ag+
Na+
Under the influence of an applied field, Ag+ ions are driven further unto
the substrate and are replaced by Na+ ions at the surface
13
Ion Exchange
Processes
Thermal annealing
14
Ion Exchange
Process Modeling
15
Ion Exchange
Process Modeling
Binary ion exchange is described by a nonlinear differential equation
C Ag
t
DAg
1 (1 M ) C Ag
2
(1 M )(C Ag ) 2 qE ext
C Ag
C Ag
1 (1 M )C Ag
kT
thermalinternal
diffusionfield due to dissimilar
D applied field
external
CAg is normalized concentration of silver ions (CAg = 1 at glass/melt interface)
DAg is self-diffusion coefficient of silver ions in substrate glass
DNa is self-diffusion coefficient of sodium ions in substrate glass
M = DAg / DNa
Eext is applied electric field
T = absolute temperature, k = Boltzmanns constant, q = electron charge
GOMD Meeting, Florida, November 12, 2004
16
Ion Exchange
Process Modeling
Solving the Diffusion Equation
The most common situation requires solution in two (transverse)
dimensions only - slow variation of waveguide geometry in the
propagation direction implies negligible ion transport
17
Ion Exchange
Process Modeling
Solving the Diffusion Equation
The Peaceman-Rachford Alternating Direction Implicit
(PR-ADI) method combines elements of both explicit
and implicit algorithms
18
Ion Exchange
Process Modeling
Boundary Conditions
C Ag
y
C Ag 0
C Ag
1 (exchange)
0 (burial)
C Ag
C Ag 0
C Ag 0
GOMD Meeting, Florida, November 12, 2004
19
Ion Exchange
Electrostatic Modeling
Ionic conductivity is calculated using the Nernst-Einstein equation
Dc q 2
kT
Both species of mobile ions contribute to the conductivity
( x, y, C Ag ) [1C Ag ( x, y )] Na C Ag ( x, y ) Ag
Combining the above two equations
DAg c0 q 2 1
( x, y, C Ag )
1
C
(
x
,
y
)
C
(
x
,
y
)
Ag
Ag
kT M
( x, y, C Ag ) 2 ( x, y ) ( x, y, C Ag ) ( x, y ) 0
GOMD Meeting, Florida, November 12, 2004
20
Ion Exchange
Electrostatic Modeling
Boundary Conditions
0
y
Space charge layer
Va h
U
d
Va = applied voltage
h = domain thickness
0
x
d = substrate thickness
21
Ion Exchange
Electrostatic Modeling
Example
Thermal Exchange
DAg = 6 x 10-16 m2/s M = 0.15 t = 20 min Wm = 3 m
22
Ion Exchange
Electrostatic Modeling
Selective Field-Assisted Burial
23
Optical Modeling
of
Ion-Exchanged Waveguides
24
Optical Modeling
of Ion-Exchanged Waveguides
For small changes in ion concentration, there is a linear relationship
between silver concentration and refractive index
This allows normalized values to be used for silver ion concentration
n( x, y , ) nsub ( ) n0 ( )C Ag ( x, y )
All eigenmodes and propagation constants (quasi-TE and -TM modes) of
the waveguide can be solved for using the Helmholtz equation
( k ) E n n E n
2
with
2n ( x, y )
k
25
Optical Modeling
of Ion-Exchanged Waveguides
Selectively-Buried Waveguide
(midpoint)
= 1550 nm, nsub = 1.507, n0 = 0.075
Fundamental mode neff = 1.5123
26
Parameter Extraction
27
Parameter Extraction
To evaluate the diffusion equation, we must know DAg
and M
To convert the concentration profile to an index profile,
we must know n0
These parameters are dependent on glass composition,
melt composition, and temperature
Glass manufacturers do not routinely provide this data
28
Parameter Extraction
Guess at parameters
Simulate IX
Calculate modes
no
yes
stop
29
Parameter Extraction
Genetic Algorithm
Parameter optimization can
be automated using a
genetic algorithm
The user needs only to
specify a range and
resolution for each
parameter
Solution of the diffusion
equation in 1D (no applied
field) is fast
Create next
generation of
trial parameters
Acceptable FOM?
no
yes
stop
GOMD Meeting, Florida, November 12, 2004
30
Parameter Extraction
Genetic Algorithm
Calculate figure of merit
2
F exp wm N eff , m neff , m
Neff,m are mode indices calculated from the simulated IX with trial parameters
wm are weights that determine the relative importance or confidence of each mode
(modes that lie near the substrate index may be difficult to accurately
measure)
Sum of squared errors ensures that errors of either sign provide a positive
contribution to F
exponential factor serves to bias the following generation toward larger vales of F
31
Model
Validation
32
Model Validation
The parameter extraction, process modeling, and optical modeling have
been validated by comparison with a fabricated waveguide
Parameter Extraction
nsub = 1.4574 = 1550 nm T = 300 C t = 1 h
0.04
0.038
0.036
n0
0.034
0.032
0.03
1
0.9
1.4
0.8
1.2
0.7
1
0.6
0.8
0.5
0.6
x 10
DAg
33
-15
Model Validation
Thermal Exchange
Field-Assisted Burial
34
Model Validation
neff,1 = 1.4575
-10
-5
-5
Height [m])
neff,0 = 1.4638
Height [m])
-10
0
5
10
-10
0
5
10
-5
10
-10
-5
neff,0 = 1.4637
neff,1 = 1.4575
-10
-10
-5
-5
0
5
10
-10
10
10
0
5
10
-5
0
a) Width [m]
0
b) Width [m]
Height [m]
Height [m]
a) Width [m])
10
-10
-5
0
b) Width [m]
35
Experiments with
Buried Ion-Exchanged
Channel Waveguides
36
10
-4
-4.5
-5
Experimental
Modeling(M=0.2)
-5.5
Modeling(M=0.5)
Modeling(M=1)
-6
Linear fit(Exp)
Linear fit(M=0.2)
Lineat fit(M=0.5)
-6.5
Linear fit(M=1)
-7
-7.5
37
experiment
25
n TE - n TM (10 -6)
20
15
10
5
0
0
10
38
15 min
45 min
75 min
105 min
@250 C
n TE - n TM (10 -6)
15
10
5
0
-5
-10
1
11
39
40
~ 5-10 nm
42
0.2
W vgd
IonX
Sa mple 2
Ab s.
0.1
0.1
Intensity (a.u.)
0.0
0.01
1100
1200
1300
1400
Wavelength (nm)
GOMD Meeting, Florida, November 12, 2004
43
Ion-Exchanged Waveguide
Device Examples
44
Used primarily for short power splitting applications (no lengthy s-bends required)
45
xN
WN
0
( x, y, z 0) a ( x, y )
x2
x1
( x, y, z 0) ( x, y) dx dy
a
( x, y) dx dy
Win
0 1
LMMI
( x, y , L ) a ( x, y ) exp i
3L
47
x
xN
WN
0
x2
x1
Win
LMMI
N odd: N/2 output waveguide positions & N/2 output waveguide widths
N even: (N-1)/2 output waveguide positions & (N+1)/2 output waveguide widths
GOMD Meeting, Florida, November 12, 2004
48
S-I
GA
LMMI (m)
395.7
446.7
Win (m)
10.0
11.3
W1 (m)
5.0
6.0
W2 (m)
5.0
4.5
x1 (m)
15.0
15.1
x2 (m)
5.0
6.6
N/A
15
Generations
N/A
250
2.088
1.901
1.225
0.007
PDL (dB)
0.016
0.001
49
Device Demonstrations
Add-Drop Wavelength Filter
Er-doped Waveguide laser array
Tapered Er-doped Waveguide Laser
50
Tilted Grating
On Resonance
Drop
Add
Output
Input
Off Resonance
Input
Output
51
Add
Input
Pass
20 dB Extinction
0.4 nm 3 dB Bandwidth
-10
-15
1562
1564
1566
1568
-5
-20
-5
-10
-15
-20
1562
1564
1566
1568
-5
-10
-15
-20
1562
1564
1566
Wavelength (nm)
Wavelength (nm)
Wavelength (nm)
DROP
PASS
ADD
1568
52
b) Mask Patterning
c) Ag film deposition
Ag
PR
Er-Doped
Phosphate Glass
Ag
+V
GND
GOMD Meeting, Florida, November 12, 2004
e) Ag Removal
f) Thermal Diffusion
Surface Waveguide
53
Multi-Wavelength Waveguide
Laser Array
Wavelength range: 2.1 nm (1548.6 - 1550.7 nm)
- covers 5 ITU grid wavelengths (50 GHz spacing )
Output Power:
11 mW
Threshold:
60 mW
Slope Efficiency: 13 %
Laser
output
1
2
3
975 nm
pump
54
10 mm
30 mm
10 mm
55
50
Wavelength = 1538 nm
40
Slope = 4.9 %
30
Threshold = 280 mW
20
Output power = 54 mW
10
0
0
0.2
0.4
0.6
0.8
1
Pump power (W)
1.2
1.4
1.6
56
Outlook
New device innovations
Mode-locked waveguide lasers
MM-pumped multi- laser arrays
Tunable dispersion compensators
All-optical header recognition chip
Exotic host glasses
Integration with other materials
GOMD Meeting, Florida, November 12, 2004
57
Conclusion
Ion-Exchange in Glass
A Proven Low-Cost Integrated Optics
Technology
58