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4
HANDBOOK OF
X-RAY PHOTOELECTRON
SPECTROSCOPY
A Reference Book of Standard Data
For Use In
X-Ray Photoelectron Spectroscopy
By
C.D. Wagner
W.M. Riggs
L.E. Davis
J.F. Moulder
Published By
Perkin-Elmer Corporation
Physical Electronics Division
6509 Flying Cloud Drive
Eden Prairie, Minnesota 55344
%
Copyright 1979
By
Perkin-Elmer Corporation
Physical Electronics Division
Printed in U.S.A.
All rights reserved
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Preface
X-Ray Photoelectron Spectroscopy (XPS), more
popularly known as Electron Spectroscopy for
Chemical Analysis (ESCA), is now a widely-used
analytical technique for investigating the
chemical composition of solid surfaces. Much
has already been written concerning the principles of the technique and the diverse range of
applications for which it has been used. Until
now, however, a concise reference work has not
been available to the ESCA practitioner. Thus, we
felt it desirable to assemble in a single, compact
volume much of the information required by those
persons using ESCA on a routine basis.
<<<<<4<<4<44 4<<4<4<4<<<<4<<<<<
Contents
I. X-ray Photoelectron Spectroscopy
1. Introduction
6
6
6
6
7
7
7
7
8
4. Experimental Procedure
8
A. Experimental Technique for Obtaining
Spectra
8
10
B. Instrument Calibration
C. Programming Scans for An Unknown
Sample
10
(1) Survey Scans
(2) Detail Scans
5. Data Interpretation
A. The Nature of the Spectrum
(1) General Features
(2) Kinds of Lines
B. Line Identification
12
12
16
27
168
III. Appendix
179
|4
I. X-RAY PHOTOELECTRON
SPECTROSCOPY
PERKIN-ELMER
* *
<
< <
<
<<<<
1. Introduction
Surface analysis by ESCA involves irradiation of
the solid in vacuo with monoenergetic soft x-rays
and sorting the emitted electrons, by energy. The
spectrum obtained is a plot of the number of emit
ted electrons per energy interval versus their
kinetic energy. Each element has a unique elemen
tal spectrum, and the spectral peaks from a mix
ture are approximately the sum of the elemental
peaks from the individual constituents. Since the
mean free path of the electrons is very small, the
electrons which are detected originate from only
the top few atomic layers. Quantitative data can be
obtained from the peak heights or areas and iden
tification of chemical states often can be made
from the exact positions and separations of the
peaks, as well as from certain spectral contours.
PERKIN-ELMER
>>>>> >>>>>>*
FERMI LEVEL
6P3/2
6P 1/2
SP3/2
5p 1/2
5s
"7/2 4f:
5/2
"
H)
URANIUM
IRON
500 eV
2P3/2
2Pl/2
"1*5/2
4(13/2
1000 eV
"P3/2
"Pl/2
Figure 1.
I i I i
<
In addition to the photoelectrons emitted in the
photoelectric process, Auger electrons are emitted
due to relaxation of the energetic ions left after
photoemission. This Auger electron emission oc
curs roughly 10"'4 seconds after the photoelectric
event. (The competing emission of a fluorescent
x-ray photon is a minor process in this energy
range, occurring less than one percent of the time.)
In the Auger process, shown in Figure 2, an outer
electron falls into the inner orbital vacancy, and a
second electron is emitted, carrying off the excess
energy. The Auger electron possesses kinetic
energy equal to the difference between the energy
of the initial ion and the doubly-charged final ion,
and is independent of the mode of the initial ioniza
tion. Thus, photoionization normally leads to two
emitted electrons, a photoelectron and an Auger
L2 iOR
< <
i i
2p
60
L, OR 2s
/
40
PHOTOELECTRON
PHOTON
4-
SB
>
E
ft/.
KOR 1s
\~E-75
+/
AUGER ELECTRON
Cf*
-0-1O
L2_3 OR 2p
ALUMINUM
L, OR 2s
200
1000
2000
400 600
(E) ELECTRON ENEHGY, (eV)
4000
K OR 1s
Figure 3.
Figure 2.
+=
A= CARBON
0= SILICON
0= GOLD
100
--
V
/ 4-
PERKIN-ELMER
>>>>)
>>>>>>>>>
PHYSICAL ELECTRONICS
>>>
>> >
<
I I I
<
I 4
<<<<<J<<<<
are likely to change the chemical nature of the
surface. Thus, identification of the remaining
chemical states may not accurately reflect the
initial composition.
D. ABRASION.
Abrasion of a surface can be accomplished
without significant contamination by using
silicon carbide paper #600. This does cause
local heating, so that reaction with environmen
tal gases may occur (e.g. oxidation in air and for
mation of nitrides in nitrogen). The roughness
produced will reduce the ESCA signal intensity
relative to that of a smooth sample. Use of this
technique usually provides intense spectra of
metals along with a contribution from the oxides
and/or nitrides that form on the surface. Alkali
and alkaline earth metals cannot be satisfactori
ly prepared in this manner. Spectra of such
samples can be obtained only with rigorous
ultra-high vacuum preparation .and measure
ment conditions.
F. GRINDING TO POWDER.
Spectra reasonably characteristic of bulk com
position are most frequently obtained on
samples ground to a powder in an alumina mor
tar. Harder surfaces than alumina can be used,
but they are expensive for general use. Again,
protection of the fresh surfaces from the at
mosphere is required. When grinding samples,
<
I 4
<
<
<
>*
H. CONSIDERATIONS OF MOUNTING ANGLE.
In ESCA studies the sample mounting angle is
not critical, but it does have some effect on the
spectra. The use of a shallow electron take-off
angle accentuates the spectrum of any layer
segregated on the surface, whereas a sample
mounting angle normal to the analyzer axis
minimizes the contribution from such a layer.
This effect can be utilized in estimating the
depth of atoms contributing to the spectrum. It
is not limited to planar surfaces, but is even
observed with powders, though the effects are
muted. The geometry of the double pass
cylindrical-mirror analyzer used to obtain the
>>*
spectra presented in this Handbook effectively
integrates over a large range of take-off angles
when used in the normal configuration. This
reduces the effect of variations in sample
geometry and mounting angle to an insignifi
cant level in most cases. However, use of a 50
sample mounting angle in conjunction with the
angle-resolved aperture inside the analyzer
allows the take-off angle to be varied without
changing the sample mounting angle. Thus,
take-off angle effects can be minimized for
routine work, or emphasized when desired (see
Section I.5.E., p. 25)
4. Experimental Procedure
A. EXPERIMENTAL TECHNIQUE FOR OBTAINING
SPECTRA.
All spectra in this Handbook were obtained us
ing a PHI Model 550 ESCA/SAM system. A
schematic diagram of the apparatus, shown in
Figure 4, indicates the relationship of major
components, including the electron energy
analyzer, the x-ray source, and the ion gun used
for sputter-etching. The Model 25-260, Precision
Electron Energy Analyzer, incorporated in the
.ESCA/SAM is a double pass, cylindrical-mirror
type analyzer (CMA) with a retarding grid input
stage. The x-ray source is a standard flangemounted Physical Electronics source which can
be configured with a magnesium or an
aluminum anode. All of the spectra in the Hand
book were taken with an x-ray source power of
600 watts ("IOKv-60 ma). As shown in Figure 4, the
specimens were mounted on the end of the sam
ple introduction probe at an angle of 50 with
PHYSICAL ELECTRONICS
surface.
In the ESCA/SAM System, energy distribution,
energy resolution and the size of the analysis
area are strictly a function of the analyzer. For
all of the spectra in the Handbook the analyzer
was operated in the retarding mode. This gives
an energy distribution function with intensity
proportional to E"1. The retarding grids are used
to scan the spectrum while the CMA is operated
at a constant pass energy. This results in con
stant resolution (AE) across the entire energy
spectrum. The size of the analysis area is de
fined by the size of the circular apertures at the
output of the CMA stages. Analyzer energy
resolution (AE/E) is also determined by these
apertures. In the Precision Electron Energy
<<<<<<<11<<<<<<<<<<<<<<I<<<<<<
COMPUTER
SYSTEM
(MACS)
ANALYZER
CONTROL
ION
GUN
PULSE COUNTING
DETECTION
INNER
X-RAY
CYLINOER
SOURCE
OUTER
CYLINOER
MAGNETIC
SHIELD
ELECTRON
MULTIPLIER
ELECTRON
GUN
SAMPLE PROBE
RETARDING
GRIOS
FIRST
APERTURE
Figure 4.
ANGULAR RESOLVED
APERTURE
SECOND
APERTURE
B. INSTRUMENT CALIBRATION.
To ensure the accuracy of the data presented in
the Handbook, the instrument used to obtain the
data was calibrated regularly throughout the
data gathering process. The energy scale was
periodically calibrated using a high precision
digital voltmeter. Then, several times each day,
the calibration was checked for accuracy.
' *
>>
932.4 eV
567.9 eV (Al radiation)
334.9 eV (Mg radiation)
74.9 eV
Cu3p3/2
83.8 eV
Au4f7/2
Since the 2p3)2 and 3p3/2 photoelectron peak
energies of copper are widely separated in
energy, measurement of these peak binding
energies provides a quick and simple means of
Cu2p3,2
Cu (L3M5M5)
Figure 5.
10
PHYSICAL ELECTRONICS
<
<<<<<<<<
< <
<
<
< <
PERKIN-ELMER
11
>>
>>> >
5. Data Interpretation
A. THE NATURE OF THE SPECTRUM
(DGeneral Features.
PHYSICAL ELECTRONICS
<4<<<<<<<<<<
still more. Since Auger lines have kinetic
energies that are independent of the ioniz
ing radiation they appear on a binding
energy plot to be in different positions
when ionizing photons of different energy
(i.e. different x-ray sources) are used. Coretype Auger lines (with final vacancies
deeper than the valence levels) usually
have at least one component of intensity
and width similar to the most intense
photoelectron line. Positions of the more
prominent Auger components are
catalogued along with the photoelectron
peaks in Tables 1 through 4 in the
Appendix.
iii. X-ray Satellites. The x-ray emission spec
trum used for irradiation exhibits not only
the characteristic x-ray, but some minor
x-ray components at higher photon
energies. For each photoelectron peak that
results from the Ka x-ray photons, there is a
family of minor peaks at lower binding
energies, with intensity and spacing
characteristic of the x-ray anode material.
The pattern of such satellites for Mg and Al
is shown in Figure 6 and Table 1.
--
----r
Table 1
<*4
<*5
Contaminating Radiation
3Q0
Figure 6.
290
280
270
220
210
200
Anode Material
Mg
Al
O (Ka)
728.7
961.7
Cu (La)
323.9
556.9
Mg (Ka)
233.0
Al (Ka)
-233.0
PERKIN-ELMEFl
13
>)>)>
*>>*>>>>>>>>)
CuO
CIs
*10
970
Figure 8.
Figure 7.
PHYSICAL ELECTRONICS
960
950
940
BINDING ENERGY, eV
930
<
i i i i i i i
<
<<<<<<<<<<<<<<<<<<<<
Cr METAL
N(E)
E
N(E|
NiO
575
555
535
515
415
395
375
88
Figure 9.
86
lines.
84
82
80
BINDING
Figure 10.
78
76
74
72
70
68
ENERGY. eV
15
* * * *
> >
>
>
I I I
>
>}))))))>))))
Figure 11.
N(E)
Figure 12.
16
B. LINE IDENTIFICATION
In general, interpretation of the ESCA spectrum
is most readily accomplished by first identifying
the lines that are almost always present,
specifically those of carbon and oxygen, then
identifying major lines and associated weaker
lines and, lastly, identifying the remaining weak
lines. The following step-by-step procedure
generally simplifies the data interpretation task
and minimizes data ambiguities.
190
182
174
126
118
110
PHYSICAL ELECTRONICS
17
>>>>>>>>>> >>>>>>>>
must be taken to ensure that the gold is
present in trace quantities so that the
original spectrum is little affected. In this
procedure there may well be a double cor
rection. The steady-state potential after
gold is deposited may well be different
from the steady-state potential in the
original sample before gold deposition.
PHYSICAL ELECTRONICS
and
(3)Auqer
<<<<<<<<<<<<<<<<<<<<<
ending with double vacancies below the
valence levels) usually have at least one com
ponent that is narrow and intense, often near
ly as intense as the strongest photoelectron
line (cf. spectra for F, Na, As, In, Te, and Pb).
There are four core Auger groups that can be
generated by Mg or Al x-rays: the KLL (Na,
Mg); the LMM (Cu, Zn, Ga, Ge, As, and Se); the
MNN (Ag, Cd, In, Sn, Sb, Te, I, Xe, Cs, and Ba);
and the NOO (Au, Hg, Tl, Pb, and Bi). The
MNN lines in the rare earths, while accessi
ble, are very broad because of multiplet split
ting and shake-up phenomena with most of
the compounds. Valence-type Auger lines
(final states with vacancies in valence levels),
such as those for 0 and F (KLL); Mn, Fe, Co,
and Ni (LMM); and Ru, Rh, and Pd (MNN), can
be intense and are, therefore, also useful.
Chemical shifts occur with Auger lines as
well as with photoelectron lines. The
chemical shifts are different from those of the
photoelectron lines, however, and usually are
considerably more pronounced. This can be
very useful for identification of chemical
states, especially in combination with
photoelectron chemical shift data. If data for
the various chemical states of an element are
plotted, with the kinetic energy of the
photoelectron line on the abscissa and that of
the Auger line on the ordinate, a twodimensional chemical state plot is obtained.
Such plots accompany the spectra for F, Na,
Cu, Zn, As, Ag, Cd, In, and Te.
With chemical states displayed in two dimen
sions, the method becomes more powerful as
a tool for identifying the chemical com
ponents. In the format adopted for the Hand
book, the kinetic energy of the Auger line is
plotted against the binding energy of the
photoelectron line, with the latter plotted in
the -x direction (kinetic energy is still, im
<<<<<<<<<
plicitly, + x). the kinetic energy of the Auger
electron, referred to the Fermi level, is easily
calculated by subtracting from the photon
energy the position of the Aug'er line on the
binding energy scale.
KEa
KEP
BEP BEa
(2)
KEa +
BEa
BEp = hv
(3)
(4)
above.
PERKIN-ELMER
19
>>>> >>>>
(4)Chemical Information From Satellite Lines
and Peak Shapes.
i.Shake-up Lines. These satellite lines have
Table 3
General guide to paramagnetic species
Multiplet splitting and shake-up lines are generally expected in the paramagnetic states below.
Atomic No.
Piamagnetic States
Paramagnetic States
Ti + 4
22
Ti + 2,
Ti+3
23
V + 2,
y+3
24
Cr + 2, Cr + 3, Cr + 4, Cr + 5
Mn + 2, Mn+3, Mn + 4, Mn + 5
Cr + 6
Mn + 7
Fe + 2, Fe + 3
oo + to oo + co
25
26
27
28
v +4
Ni + 2
Cu + 2
v+5
44
Mo + 4, Mo + 5
Ru + 3,Ru+4, Ru + 5
Cu + 1
Mo + 6, MoS2, MofCNJa
Ru + 2
47
Ag + 2
Ag + 1
58
Ce + 3
Ce + 4
59-70
29
42
75
W + 4,W + 5
Re + 2,Re + 3,Re + 4,Re + 5,Re + 6
76
Os + 3,Os + 4,Os + 5
Os + 2,Os"l'6,Os + 8
77
lr +
U + 3,U + 4
74
92
20
physical electronics
Re + 7,
lr + 3
U+6
Re03
4<<<<<<4<<4<<<<<1<<1<114<1<4<
chemical state. The 3s line, however, is
weak and therefore is not often useful
analytically. The 2p doublet separation is
also affected by multiplet splitting and the
lines are more intense. The effect becomes
very evident with cobalt compounds where
the separation varies up to one electron
volt. Little utilization of this effect has yet
been made. However, when first row transi
tion metal compounds are under study, it
may prove useful to record accurately
these line separations and make com
parisons with model compounds.
lli
\\
/
VERTICAL HEIGHT,
PEAK TO BASELINE
\
\
WIDTH PARALLEL TO
BASELINE AT HALF THE
HEIGHT
--
---
TANGENTIAL BASELINE
DELINEATING AREA
Figure 13.
I = nfoSyAAT
(5)
n = l/fo0yAAT
PERKIN-ELMER
(6)
21
>>>>
>> >
n,
1,/S,
=
n2
12' 2
-W-
>>>>>>>>>
characteristics of the double pass cylindricalmirror type analyzer supplied by Physical Elec
tronics. An example of the application of equa
tion 8 to analysis of a nearly ideal sample,
polytetrafluoroethylene, is shown in Figure 14.
(7>
-:--:------;
F Is
Ux
2j n,
I
v
2/|./s,
(8)
PHYSICAL ELECTRONICS
"\l
F AUGER
-600
1000
800
1
i
1
400
BINDING ENERGY, eV
Figure 14.
C 1s
[
F2*
iiss
200
22
,< ,
<
< <
measurement.
For quantitative work it is advisable to check the
spectrometer operation frequently to ensure
that analyzer response is constant and op
timum. A useful test is the recording of the three
widely-spaced spectral lines from copper.
Measurement of peak height in counts per se
cond should be made on 20 volt wide scans of
the 2p3/2, LMM Auger, and 3p lines, and the peak
width of the 2p3,2 line should be measured as
23
>>>>>>>>)>>>>>>>>>>>>>>>>>>>
Kt-ijWj
l3mZjV
L3M,SM,S
Figure 15.
24
Peak heights of minor lines relative to strong lines (based on survey spectra contained herein).
PHYSICAL ELECTRONICS
4
For the situation where the element is in a
bulk homogeneous layer beneath a thin
contaminating layer the characteristic in
tensity ratio is modified in the opposite
direction. Thus, for a pair of lines due to
subsurface species, the low kinetic energy
line will be attenuated more than the high
kinetic energy line, distorting the
characteristic intensity ratio, By observing
such intensity ratios and comparing them
with the values for pure bulk elements
(Figure 15), it is possible to deduce whether
the observed lines are due to predominant
ly surface, subsurface, or homogeneously
distributed material.
Target
Sputter Rate,
Ta205
100
Si
Si02
90
85
A/mina>
1 i
Pt
220
Cr
140
Al
95
Au
a) 20%.
410
PERK1N-ELMER
25
>>
-r
-1-1
Al METAL
P\
ai2o3 in contact
WITH Al
\\
AljOj
INSULATED
N(E)
/
/
NO
SPECIMEN
\7/
1
1
1
1
NEUTRALIZER /
L.
N.
j *
l***
114
Figure 16.
112
110
108
PHYSICAL ELECTRONICS
>
,iii
128
Figure 17.
126
124
/'\
/ \
/ '1\ \
\ J
/
/
NEUTRALIZER
LN
'
SPECIMEN
\\
ON WITH HIGHER
BIAS VOLTAGE
26
1
|
130
/
/
l\
1 \
SPECIMEN
NEUTRALIZER
ON
106
104 102 100
BINDING ENERGY, eV
----
> >
116
114
112
110
>
> | >
<4I<<I4<<<<4<< J<<<<4<4<<<<<<<<<
tions. This area is expressed as the full width
at half maximum of the photoelectron intensi
ty observed as a function of distance from the
center of the imaged area. Thus, the effective
27
>>>>>>>>>>
those of recorded chemical states should
be considered probable identification, if
consistent with other elemental findings
and with calculated stoichiometry (see
below). Note that experimental error in
point location is much greater along the
Auger parameter grid than normal to the
grid lines.
28
PHYSICAL ELECTRONICS
>
>
l>/s>
2 i/s,
(9)
where lx is the relative peak area of photoelectrons from element x. However, it must be
pointed out that the method is limited in ac
curacy by the assumptions made (cf Section
I.5.D., p. 21).
PERKIN ELMER
29
))))))))>)
This section of the Handbook contains survey
(broad scan) spectra of sixty-eight elements, detail
spectra of the strongest photoelectron lines, and a
photoelectron binding energy chart or a twodimensional Auger parameter plot for each of the
sixty-eight elements. Used in combination with the
Tables in the Appendix, the survey spectra
facilitate element identification. The detail spectra
and charts aid in the identification of chemical
states.
>>>>>>>>>>
dicated and, where appropriate, the spin doublet
separation is noted. When necessary, checks were
made to ensure that chemical states were un
changed by the radiation. The lines from insulators
have been charge-corrected to the adventitious
hydrocarbon C1s line at 284.6 eV. The instrument
was, in all cases, calibrated to place the Au4f7(2
line at 83.8, Cu3p3/2 line at 74.9, and the Cu2p3(2 line
at 932.4 eV. The instrumental contribution to the
line width for the detail spectra is 0.5 eV (25 volts
pass energy).
SURVEY SPECTRA
The broad scans include all of the lines that are
normally useful. The photoelectron and more pro
minent Auger lines for the element of interest are
identified. Lines that occur due to other elements
are only designated by the elemental symbol, and
x-ray satellites and energy loss lines are not noted.
Many elements exhibit x-ray generated Auger lines
which have sufficient sharpness and structure to
be useful. For these elements, the Auger region is
displayed in expanded form. Exact energies of the
sharper Auger lines are noted. The energies of
those that are less sharp are recorded to the
nearest electron volt. The instrumental contribu
tion to the line width is 1.0 eV (50 volts pass energy)
for the broad scans.
'v
30
PHYSICAL ELECTRONICS
<<<<<<<4<<<<<<<<<<<<< <<<<<<<<<
Two-dimensional chemical state plots accompany
the spectra for F, Na, Cu, Zn, As, Ag, Cd, In and Te.
In the format adopted, the kinetic energy of the
Auger line is plotted against the binding energy of
the photoelectron line, with the latter plotted in the
-x direction (kinetic energy is still, implicitly, -fx).
The points on the two-dimensional plot are drawn
as rectangular boxes at 45, reflecting the ex
pected error of measurement in the two perpen
dicular directions.
References for the one and two-dimensional plots
were catalogued by initials of the first three
authors. Where two or more identical symbols for
references would have resulted, a final differen
tiating number was added. The entire reference list
is presented in Section 11-2 (p. 174).Those in the list
more
PERKIN-ELMER
31
Lithium, Li
Number
COMPOUND
1s BINDING ENERGY, eV
55
50
Li
Li
LiN3
ip
L|'P< .r%s:bi*ct
LiCr02
Li2CrOa
,JY.
;,F.
f \.
Li Br
LiCI
f"!p V-vottiCjoyo
LiF
s--
;yj
l'
I )
REF.
BCW
."1
1
1
C>3
.1.. '
.ri: <2*
r
KL1
SGR
MVS
MVS
AC1
AC1
MVS
MVS
MVS
O
BINDING ENERGY, eV
32
PHYSICAL ELECTRONICS
60
___
_
I \
SPECTROSCOPY
)
,
,,< ,
Lithium, Li
Number
LiF
Mg Ka
N(E)
45
<
1000
900
800
700
600
500
400
300
200
100
BINDING ENERGY. eV
PERKIN-ELMER
33
COMPOUND
1s BINDING ENERGY, eV
110
Be
Be
Be
nw
Bep/f- c
BeO
Na2BeF4
NaBeF,
BeF2
BeF,
Atomic
Number
115
REF.
120
O
HJG
B1
NGD
HJG
NKB
NKB
NKB
HJG
112
BINDING ENERGY, eV
11
34
PHYSICAL ELECTRONICS
\
>PY
<<<(<
* * *
I I 1
I I \
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
Beryllium, Be
Atomic A
Number Hr
Mg Ka
Be 1s
102
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
35
Boron, ti >
/viomic
Number
))))))))
t ) )
HANUoOOK
X-RAr PHOIUELEClrlON SPECTROSCOPY
ut-
COMPOUND
1s BINDING ENERGY, eV
185
190
REF.
195
B4C
MnB2
TiB2
CoB
'
.->
'
VB2
HfB2
MoB2
Fe2B
'
AIB2
NaBH4
B
Me4NB3H8
NaBPh4
b10h,4
B10H,2Pt(PPh3)2
B10H12Pt(PEt3)2
BN
190
bn
BN
BINDING ENERGY, eV
p-CIC6H4B(OH)2
NaBH(OMe)3
_
JB
.
Ph3POBBr3toig
.
Na2B4O7-10H2O.|:'::iQ;;-r
.
B(OH)3
B203
Ph3POBCI3
EtNH,BF
NH3BF3
NaBF4
36
PHYSICAL ELECTRONICS
>|
1
I II
)PY
< <
<
<<<<<<<<<
Boron, B a5
Mg Ka
B(KVV)
L
1100
1000
900
800
700
500
600
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
37
)>>)>>
Carbon, C
Number
280
1s BINDING ENERGY, eV
284
288
292
HAL
COMPOUND
HfC
TiC
WC
C (graphite) :
(CH2)n
Mn(C5H5)2
>>>>
REF.
Polyethylene
296
284.6
T"
SnPh4
MeCH2NH2
Cr(C6H5)2
MeCH2CI
MeCH2OH
MeCH2OEt
MeCH2OOCMe
CS2
N(E)
E
Fe(CO)5
Me2CO
:(NH2)2CO
< *.
294
;C6F6
MeCOONa
MeCOOEt
MeCOOH _
'N a2C02
284
BINDING ENERGY. eV
274
NaHCOj
:CO
C02
(CHFCH2)n
(CHFCHF)n
[(CHFCF2)n
:(CF2CH2)
'
*.**
'
l(CF2CHF)n;v
(CF2)n
CFjCOONa
CCI4
:CF2COMe
;CF3COOEt .
'i
<X>
1100
i
38
PHYSICAL ELECTRONICS
,,, ,
. ......
,.<<<<
I<I<<<<<<<
Carbon, C ess 6
Polyethylene
C(KLL)
Mg Ka
KVV
997
990
C 1s
1020
N(E)
980
1000
C(KLL)
1100
1000
900
800
700
600
500
400
300
200
100
BINDING ENERGY, eV
PERKIN-ELMER
39
1s BINDING ENERGY, eV
406
393
402
REF.
410
BuNHj
PhNH2
pyridine
H2NCsH4N02
h2nso2c6n4no2"~
tetracyanoqui nodimethane
PhCN
PhNHCSNHPh
guanidine HCI
phthalocyanine
PhNNPh
h3n+chrcooEtNHjCI
Me4NBr
Me4NCI
P-NHjC8H4SOjchloranil-pyridine
'
398
BINDING ENERGY, eV
Me3NO
AmONO
MeN02
PhN02
WN
bn
NaSCN
K4Fe(CN)6
KCN
S2N2
co(nh3)6ci;.-;
n2h5so4
(nh3oh)+ci->
nh4no,
Na2N202
NaN3
NaN02
NaN03
'
$
40
PHYSICAL ELECTRONICS
Nitrogen, N
Atomic
Number
BN
N(KVV)
873.4
903
Mg Ka
890.6
N 1s
N(E)
840
880
920
1100
1000
900
800
700
500
600
BINDING ENERGY. eV
400
300
200
100
perkin-elmer
41
)))>))
Oxygen, O
Number
COMPOUND
525
>
>)
I t
1s BINDING ENERGY, eV
530
H/
KBA
KBA
KI1
KBA
;:\>-s
wo3
Cr203
Cu20
Ni202
CR
AC1
KOH
RBO
KBA
KBA
KI1
ai2o3
CD
Na zeolite
Si02 gel
MWJ
Ni(OH)2
AI(OH),
CaC02
Na2S203
Na2S03 -T '
Na2S04
\f: :
'
CsCI04
REF.
Ru02
'
>>>>>>>)>>>
535
NiO
Fe203
Ruo2
>
"
Li2Cr04
CuCr02
AI2(Mo04/3
AI2(W04)3
Cr(CO)6
R,SO
* ."j&- ?;<S,
RjS02
H2NC8
h2nc,h4so2nh2
RS03Na
l1I
r*
J fp*&,
MWJ
FWF
S4
LHJ
LHJ
LHJ
MVS
AC1
AC1
AC1
PCL
PCL
PCL
NH2
PFD
ML
ML
HS
LHJ
LHJ
CT
CT
CT
542
532
BINDING ENERGY, eV
lJ
<x>
100C
42
PHYSICAL ELECTRONICS
I<<<<<<<<<<<<<<
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
<<<<<<<<<<<<<<<
Oxygen, O
Atomic
Number
Q
O
ai2o3
O 1S
Mg Ka
i
-r
O(KVV)
745.3
766.7
780.6
N(E)
522
765
805
725
Al
<D
1000
900
Ar
Ar
I
Al
"nJ W_/U
0 2s
vi
800
700
600
_L
500
400
_L
300
200
100
BINDING ENERGY, eV
PERKIN-ELMER
43
> >
Fluorine, F
Number
>
I t
> >
>
>)
> >
1344
1343
660
LU
684.9
LU
659
1342
658
1341 3
657
1340 2
656
1339
uj
N(E)
LU
655
CoSIF,
695
685
675
BINDING ENERGY, eV
654
653
652
651
650
*C4F
samples.
methyl-pyridine rings.
690
689
688
<x>
44
PHYSICAL ELECTRONICS
687
686
685
1s BINDING ENERGY, eV
684
683
10C
,,,
PY
<
I i
<
Fluorine, F
F(KLL)
Number
KLLjj
598.7
Mg Ka
624.8
643.8
675
F(KLL)
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
45
>>>">>>>
H "1
Sodium, Na
II
>>>>>>>>)
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
Atomic
Number
2067
997
1 1s
1071.4
2066
2065
Na2HP04
2064 cc
lu
N(E)
E
2060 S?
992
1082
1072
BINDING ENERGY, eV
1062
NaAsO
NajHPOi |
NajS20
NaOAc
NajCOj
NaPO
I
Na2SO
NaNO
/Na Zeolite
NajZrFs
Na,AlF
1075
1074
1073
<E
46
PHYSICAL ELECTRONICS
1072
1071
1070
1s BINDING ENERGY, eV
in
Section II. 2
1069
1068
Pl
I i
|
| (
Sodium, Na
Number
11
Na2HP04
Na(KLL)
Mg Ka
KLjjLjj
263.5
Na 1s
302.5
KL.L,
331.0
N(E)
1062
250
300
350
x4
<<:% aftggagaafc
Na2s
ifeli
"N
_L
1100
1000
900
800
700
500
BINDING ENERGY, eV
600
400
300
200
100
PERKIN-EL.MEFI
47
)))>>)>)>)>)
Magnesium, Mg : 12
50
45
Mg
Mg
Mg
Mg
Mg3Au
MfllCu_
Mg3Bi
Mg ox
MgF2
LMK
I I
>
>
Mg
55
(D
""
>
REF.
2p BINDING ENERGY, eV
COMPOUND
49.75
HF1
FWF
FWF
FWF
FWF
FWF
CD
BINDING ENERGY, eV
I
F
1
t
\I
<X>
i
48
PHYSICAL ELECTRONICS
(<<((<<((<
<<<<<<<<<<<
<
<<<<<<<<
Magnesium, Mg
Atomic "J O
Number
T
KL23L23
Mg(KLL)
300.9
Al Ka
346.5
KLiL,
Mg1s
380.2
N(E)
40
390
290
340
-r-
Mg(KLL)
Mg2s
xlO
vl
<D
..5T>
_L
1400
1300
Mg2p
1200
1100
1000
900
I
600
700
800
BINDING ENERGY, eV
500
400
,v .V
300
200
100
perkin-elmer
49
>!> i
Aluminum, Al
Number
13
COMPOUND
Al
Al
Al
ai
aib2
I
1
iA
Al ox
AIA
7-AL0-
7-AI203
Na zeolite
Zri Al204
_.
1
,
SAi.0.7fsgflagS7
soAi=o-:,s3a3fSSsass
NiAI204
AI2(W04)3
AI2(Mo04)3
Al acac3
llf3
<A
I Br3
AICI,
l'
t-ai2o3
aif3
k3aif6
w.
:*
LMK
MEC
...
B2
:;
1
1
'
1
1
!' *-
L-'
fy
i i i i i i
MSC
B2
ai2o3
ai2o2
ai2o3
I i i i
80
75
REF.
2p BINDING ENERGY, eV
70
'
?' -
NSL
MSC
NGD
OW
MWJ
NH2
MWJ
OW
BGD
PCL
NH2
NH2
PCL
MSC
MSC
MSC
MSC
MSC
MSC
MSC
76
BINDING ENERGY, eV
76
BINDING ENERGY, eV
50
PHYSICAL ELECTRONICS
i
|
i
HAr
DP Y
<
HmNDBOuK of x-ray
<
photoelectron spectroscopy
<
<
<
<
'
((((((<<
Aluminum, Al
Atomic
Number
"f Q
IO
Mg Ka
Al 2s
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
51
Silicon, bi
14
COMPOUND
2p BINDING ENERGY, eV
98
103
REF.
108
99.15
Si
Si
Si
Si
JV
Ph4Si
MV
NBA
GCH
Me3SiNHSiMe3
Me3SiOSiMe3
PhjSi(OH)2
I
-i-. ll:..
Ph3SiOH
Ph3SiOSiPh3_
Et3SiCI
(Me2SiO)5
(Me2SiO)n
Et3Si F
Et2SiCI2
EtSiCI3
sit,
"V1
Na zeolite Ju
silicates
is2
CDB
MV
HBB
'
Ph4Si
Ph4Si
Ph3SiSiPh3
Ph3Si Si Ph3
Me3SiSiMe3
,p,
'
NBA
GCH
GCH
GCH
GCH
NBA
NBA
GCH
GCH
GCH
NBA
GCH
GCH
GCH
NBA
MWJ
CDB
MV
Si02
(D
SiO,
NSL
MV
CDB
MWJ
NSL
MV
Si02
SiOj
Si02 gel
Na2SiF6
K2SiF6
114
103.4
104
BINDING ENERGY, eV
PHYSICAL ELECTRONICS
94
104
BINDING ENERGY, eV
114
52
SiO
94
,%
<
<
<
<
<
' ' *
' '
Silicon, Si
Atomic "1 /I
Number
IHT
Mg Ka
94
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
PEBKIN-ELMER
53
)))
))))))))
Phosphorus, P as 15
COMPOUND
2p BINDING ENERGY, eV
128
CrP
MnP
GaP
BP
P
'
133
I
l
"
Ph3P
Pt(PPh3)4
PtCI2(PPh3)2
PdCI2(PPh3)2
PdBr2(PPh3)2
_
PdI2(PPh3)2
pto2(pph3)2PtCI4(PMePh2)2
v::
Ph3PS
BUjPCI
Ph4PBr
Ph3PO
(Phs)3ps
(PhS)3P
p3n5
Ph2PO(OH)
BaHP03 :>
K2HP04
Na2HPo4
C-
kh2po4
POBr3
JNa,P04
Na4P207
(NaP03)j .
NaP03 . .v
(PhO)3PO
>
P205
NH4PF9
KPFa
PBr5
<D
54
PHYSICAL ELECTRONICS
..
.
"
-T
>
>>>>>>)
>>>> >
REF.
Na2HPO
138
PHH
PHH
(D
PHH
PHH
PHH
R
R
KBM
KBM
KBM
R
LB
PHH
PHH
SRH
PHH
MSA
PHH
PHH
132.9
144
134
124
BINDING ENERGY, eV
NBK
PHH
PHH
CD
PHH
PHH
MVS
MVS
PHH
PHH
PHH
NGD
PHH
SMA
PHH
11I
thandbook
I of<(<<<<
x-ray photoelectron spectroscopy
(<!<<<<
'
Phosphorus, P
Atomic C
Number |O
Na2HP04
Mg Ka
Na
N(E)
Na
- Na
1100
1000
900
800
700
500
600
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
55
>>>>>>>>>>>>>
Sulfur, S
Number
16
COMPOUND
2p BINDING ENERGY, eV
160
165
Na2S
B4
B4
Na2SS03
PhNHCSNHPh
PhSCMe3
Ph3PS
tetrahydrothiophene
PhSH
Ph2S
PhSSPh
\--rT
.
'
thiophene
"
s2n2
Me3SI
IV
02NC6H.S02Na
Ph2S O ~
BzMeSO .
PhS02Na
Na2S03
Na2SS03
BzMeS02
V
S02
PhS03Na
p-H2NCBH4s62NH2i
.'
PhS03Me
Na7S04
FeSO.,
Fe2(S04)3
56
REF.
LHJ
LHJ
SFS
KFeS2
WS2
MoS2
Sn
170
p-NaSCjHjNOj
PbS
FeS
s3
>>>>>>>>>>>>>
PHYSICAL ELECTRONICS
v.
NH2
PCL
LHJ
PNS
PLB
MSA
MMP
LHJ
LHJ
LHJ
LHJ
0>
LHJ
SDI
LHJ
LHJ
LHJ
ML
LHJ
LHJ
LHJ
ML
LHJ
W1
LHJ
LHJ
LHJ
LHJ
LHJ
163
BINDING ENERGY, eV
,1
(<<<<<
I I t
Sulfur, S
Alomic
Number
16
Mg Ka
1000
900
800
700
600
500
400
300
200
In*
100
BINDING ENERGY, eV
pehkin-elmer
57
'cLlorine, CI'
'h
)))>)))
Atomic
Number
COMPOUND
195
2p BINDING ENERGY, eV
203
199
207
REF.
211
CsCI
RbCl
KCI
NaCI
LiCI
guanidine HCI
AgCI
CuCI
N iCI2
HgCI2
ZnCI2
CdCI2
199.9
FeCI,
FeCI,
CuCI2
K2MoCI6
'
K,SnCI6
K2ReCI6
210
.
200
BINDING ENERGY, eV
190
KjPtClj
K2PtCI
Pt(PPh3)2CI2
pt(PEt3)2ci4
po(NH3)6CI3||N
fogfr
poly (vinyl"chloride)
chioranil
tetrachlorohydroquinone
ch lorani l-pyridine
Tp-cic6h4)P|
-PhCI
o-C,H4Ci
PhCCI3
KCI03
rcsci
,,
<X>
1
58
PHYSICAL ELECTRONICS
< It
<
<
<
<
<
<
Chlorine, CI
Number
17
CI(LMM)
Al Ka
1-232323
1304
N(E)
190
1310
1300
1280
1290
CI(LMM)
CI 2p
x4
CI 2s
O
J
v.
1400
1300
1200
1100
1000
900
600
700
800
BINDING ENERGY, eV
500
400
300
200
100
perKIN-elmer
59
>>>>>>>>>>>>>> >>>>
Argon, Ar
Atomic
Number
"4 O
COMPOUND
Ar ( n C)
Ar ( n C)
Ar ( n Fe)
Ar ( n'Cu)Ar ( n Ag)
Ar ( n Ag)
Ar ( n Pt)
Ar ( n Au)
Ar ( n Au)
IO
240
REF.
Ar in C
245
'
2.2
252
242
BINDING ENERGY. eV
232
<X>
60
PHYSICAL ELECTRONICS
11C
<<<<<I<<<<<<<< <<<<<<
Atomic H Q
Argon, Ar Number
IO
||
Ar in C
Mg Ka _
N(E)
232
Iv
Ar(L23M2:iM23)
V\f[
'
Ar 2S
<1
1
1100
1000
1
1
900
800
700
1
1
600
500
BINDING ENERGY, eV
400
300
Ar 2p
--100
200
A
PERKIN-ELMER
61
>>>>
Potassium, K
Number
COMPOUND
2p3/j
BINDING ENERGY, eV
KF
KN,
295
> >>
> >
19
290
KBr
KBr
KCI
KCI
REF.
300
2p%
KBr
292.9
V?
KN02
kno2
K2Pt(CN)2
K2PtCI4 ''H""'-''
K2PtCI0
K2PtCI6
K2ReCI6
K2IrCI6
K2SnCI6
k2moci
K2TiF6
'
V;--V:
304
294
BINDING ENERGY, eV
284
(D
I
i
62
PHYSICAL ELECTRONICS
(
>Y
<
I t
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
(<<(<<(
'
Potassium, K
K(LMM)
Atomic H Q
Number |ij
KBr
L23M23M23
1005.1 1002.7
Mg Ka
K(LMM)
1050
970
1010
N(E)
234
K 2P3/2
*1
K2p,
Br
Br
K 2s
V.
0
1100
1000
900
800
700
500
600
BINDING ENERGY. eV
400
300
200
K3p
100
PERKIN-ELMER
0
63
> >>>>>>>>>>
20
Calcium, Ca
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
Number
COMPOUND
350
CaO
CaC03
CaS04
Cap/
CaF2
'
'-I
1
-
REF.
355
o
(D
1
.
i
i
W1
W1
NSL
346.8
N(E)
359
349
BINDING ENERGY, eV
<X>
64
PHYSICAL ELECTRONICS
339
'Y
<
< < < < < < < < < < < < <
<
<
CSlCjlim
Ca(LMM)
N(E)
Ca(LMM)
950
960
970
980
940
Ca3p
Ca 2s
i
Ca3s
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PEBKIN-ELMER
65
>>>>
Scandium, Sc
Number
COMPOUND
21
fSMfM-rV
-V.
ScjOa
Sc203
Sc203
ScCI3
ScF3
I >>>>>)>
HANDBOOK
OF X-RAY
PHOTOELECTRON SPECTROSCOPY
REF.
405
400
Sc
OjHjSCOgHg
(C5H5)2ScCI
WM
WM
WM
STA
401.7
CD
NGD
WM
W1
W1
415
405
BINDING ENERGY. eV
395
10
66
PHYSICAL ELECTRONICS
I 4
PY
[4
I
Scandium, Sc
Atomic O -4
Number |
T
i
-r
Sc203
Sc(LMM) L23M23M23
918.5
Mg Ka
L23M23V
890.9
Sc(LMM)
N(E)
395
840
890
940
Sc 2p3/2
Sc 2 p
Sc 3p
x4
Sc 3s
<E
1000
900
X
800
700
600
500
BINDING ENERGY, eV
400
300
>iT>i ml \
200
,i I,
100
PERKIN-ELMER
67
Number
COMPOUND
22
REF.
458
463
Ti
Ti
Ti
Ti
Ti'H,
TiB2
TiB2
TiS
TiC
TiC
TiN
TiN
TiO
\
6.15
C5H5TiC7H7
(CsHs),TiCI
'BaTiOj . .
PbTiO,
jSrTi03
,.
'
.;
Vv-*-,
'
..>
f-Vi,;...'
470
CaTi03
TiOz
Ti02
|Ti02
450
460
BINDING ENERGY, eV
TiO
TiCU
Na2TiF6
5.7
(D
470
68
PHYSICAL ELECTRONICS
460
BINDING ENERGY, eV
450
Ti(LMM)
Titanium, Ti
Atomic
Number
870.1
864.5
Mg Ka
Ti(LMM)
920
870
Ti 2p
820
770
N(E)
Ti 2s
Ti 3p
Ti 3s
i
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
69
>>>>
Vanadium, V
Number
COMPOUND
V
V
V
V
515
> >>>
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
23
2p% BINDING ENERGY, eV
510
REF.
520
511.95
V
V
V
V
V
vb2
vc
vs
VN
VN
(C5h5)2v
Ic5h5)2v
"
(C5H5)2VCI
V. acac,
525
505
515
BINDING ENERGY, eV
VO acacj
VOSO,
VOCI2
VO
v205
V205
v205
2p3/2
517.45
O 1s
x-ray
satellite
533
523
BINDING ENERGY, eV
70
PHYSICAL ELECTRONICS
513
|
I
Vanadium, V
2Py2
Number
23
Mg Ka
V(LMM)
---r '
V(LMM)
1
'
'
-r
L3M23M23
815.2
l3m23v
781.4
V
2py}
L3W
743.4
-11
L.
. . .
1
820
870
_i
720
770
V 3p
500
BINDING ENERGY, eV
400
300
200
100
PERKlN-ELMER
71
ILU
"J
CD
I < CD Q Q IE
oXI
o
O
-r- T O O O T
T T
WQQQChOLLLLWHWh
hhl-W(/)(/)hl-hhOOOOh(/)
O
LU
DC
eOOOOQCcoCQa-CLONNOJC <<<000<<<<<<<<<0
>
O
rt
'
'
i '
DC
>
!
i
LU
'
UJ
_
_
Ml
2
CD
\j
CNJ
mmm
; i:
V
V
'
r>
r>- '
in
'
L..
'
<n
X
.
"x
ZO
m
to
vi
Ms*
[: v
h-v-
Bm-i
io
>
in
m,c/iy.oo z
!:-
!. "i
'
to
" 9
to
___
'
$!
b'
.?
'
ki
in
k_
n *
s
>
"
*>
(N
piUL.ui_jyiU
r>.
M
of-
u_
v_
T
r> -1-
l_
oo
Q)
'nk_
CO
r*
cj
* o o;m * *
u-
<
o
I
*
,o
-!
d"
R-=5,03 ";
-7 -roH
,lO
- n'
IB U O S. o 30,0 0
LL
I;'-:#
iO'v
'*
oooraOO
n 0n"0
M
W
V. ) v
"
f
o o o' o 6 o O o o c>o o
ui
XXX
k
!#sK!
/,*
(_)
Q
Z
D
a
5
'
&
L %vj
Q-
Chromium, Cr
Atomic
Number
'i
;(
1
i
I
<
Mg Ka
Cr(LMM)
Cr(LMM)
N(E)
820
770
720
670
Cr3p
Cr3s
J
i
Ar
1000
900
800
700
600
500
400
300
200
100
BINDING ENERGY, eV
perkin-elmer
73
> =25
> > > > *Mn
I tr
Manganese,
COMPOUND
> >
645
640
S,
AtRO-IoPY
REF.
>
2p3/2
Mn
Mn(C5H5)j
Mn(C5H5)(CO)3
MnS
--x
MnS
a-MnS
r
|3-MnS
Mn2(CO),0
BrMn(CO)5
[BrMn(CO)4]2
BrMn(CO)4(PPh3)3
Mn
638.8
:
1
'
Mn2(CO)8(PPh2)2
Mnl2
11.25
K3Mn(CN)s
MnBr2
MnBr2
MnCI2
MnCi2
MnO
MnO
MnO
MnO
i
N(E)
660
655
""
650
645
BINDING ENERGY, eV
2p3/2
7-MnOOH .
635
640
MnO
642.2
Mri203
Mn203
Mn303
Mn02
Mri02
Mn02
Mn02
KMn04
MnF2
MnF2
MnF3
660
74
PHYSICAL ELECTRONICS
655
650
645
BINDING ENERGY, eV
640
635
10'
I I t
<
<
<
<
<
<
*
Manganese, Mn
Number
Mn(LMM)
25
Mg Ka
-1-1-r
-i
Mn(LMM)
(2P3/2)
Mn 2s
Mn 2py2
L3M23M23
LjMjjV
710.4
'
667-
(2p ,/2)
N(E)
335
L3VV
618.0
Mn 3p
___
-I
700
750
lilt
L.
600
650
x4
Mn 3s
O
C
1
ii
Ar
iii
35
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
75
Number
26
COMPOUND
710
REF.
715
Fe
Fe28
FeB
FeS2
Fe(C5H5)j
.
'
Fe(C5H5)2I3
Zn2Fe(CN)6
K4Fe(CN)6
KFe(CN)6
Na3Fe(CN)5N2 :
Na2Fe(CN)sNO
K3Fe(CN),
:
13.2
Fe2P2S6
KFeS2
FeS
Fe(CO)5
Fe(CO)2(NO)2 vi w
Fe(C5H5)(CO)3BPh4
FeO
FeO
'
Fe203
Fe203
..Fe203
FeOOH
FeOOH
740
730
700
710
720
BINDING ENERGY, eV
Fe20
'
"
2p%
Fs304
NaFe02
Ni
710.7
FeBr3
FeCI2
FeCI3
FeF2
FeF3".,iW"'
K3FeF6 :v:
I1
13.6
<D
76
PHYSICAL ELECTRONICS
740
730
720
BINDING ENERGY, eV
710
700
py
< <
I \
i 1
< <
* *
<
' *
* *
If!")
Atomic
'26
Fe(LMM)
Mg Ka
601.
N(E)
Fe 2s
655
705
555
605
505
Fe3p
Fe3s
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
77
>>)>)>>)
Cobalt, Co
Number
27
COMPOUND
>>*
780
REF.
Zp3/2
785
777.9
Co
Co
Co2B
CoB
Co(C5H5)j
Co(salen) " '
Co(bae)
Co(CO)3NO
'
C03O4
Co304
CoO
CoO
CoO
15.05
Co(OH)j
CoOOH
Co203
CoFe204
CoCr204
V-
810
CoMn204
ZnCo204
800
790
BINDING ENERGY, eV
CoAI204
CoAI204
coai2o4
Cs2CoCI4
CoMo04
Co(NH3)3CI3"
Co(NH3)6CI3
Co(NH3)8CI3
KCo(CN),r
HCol2 (dimethylg Iy oxime)
HCoCI2 (dimeVhyfglyoxime)
K3Co(N02)6
_
CoF2
cof3;
Co F2 4 H20 >
<D
78
PHYSICAL ELECTRONICS
2p3/2
"
770
780
CoO
780.0
V
I
ll
15.5
810
800
790
BINDING ENERGY, eV
780
770
<<I<<4<II<<<<<<
Cobalt, Co
Number
27
----1---r
-|
Co(LMM)
605
. 597.7
MgKa
L3M23V
543
L3VV
480.2
Co2p3
N(E)
770
Co2p,/2
640
'
'
590
!_
___
L.
490
540
L.
440
Co3p
770
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
rerkin-elmer
79
>
Atomic
Number
>
28
COMPOUND
REF.
8611
856
Ni
Nil,
MYG
BCD
TRL
NH2
NH2
BC1
MYG
MYG
STH
MYG
MYG
TRL
MYG
MYG
MYG
TRL
MYG
MRC
KD
MYG
MRC
KBA
Ni(CsH5)2
Ni(PPh3)2 ~
.5
NiS
'
Ni2S3
Ni(CO)4
NiBr2
Ni (dimethylglyoxime)
NiCI2(NBu3)2
NiCI2(PBu2)2
NiCI2(PPh3)2
Ni acac2
Me4NNiCI3
Ni(CN)2
K2Ni(CN)4
ZnNi(CN)4
NiCOj
'
NiO
NiO
NiO
Ni(OH)2
Ni(OH)2
\
vr*f : ,
Ni2o3
Ni203
Ni203
NiCl2
v--
I'V.-.
NiFe204'
Ni(N03)2
NiS04
NiAI204
'
NiW04
NiF2
(NH4)2NiF4
K2NiF6
ff
<
80
PHYSICAL ELECTRONICS
2P%
852.3
17.4
888
878
848
868
BINDING ENERGY, eV
NiO
KBA
NH2
KD
TRL
MC
TRL
MYG
NH2
NH2
MYG
MYG
y TRL
888
878
868
BINDING ENERGY. eV
858
848
<
i I
PY
<<<<<<<<<<<
((((<(<<<(
Nickel, Ni
Number
28
---r
1
Ni(LMM)
l3vv
407.2
MgKa
478.9
472.6
L2VV
390.0
848
Ni(LMM)
44
348
1100
1000
900
800
700
'
500
600
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMEH
81
> >>>>
Copper, Cu
923
i i
Number
r~r-
>>>))>>>>>>>
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
29
I'll
"
' \ T \
2p3/2
till
932.4
Qu
922
921
920
/ /i
/ &/ /I
/$\ y'
/
Y/ /
919
>
CO
a:
ILI
>
917
>
>
/I
CuS04 5HjO
916
914
913
// Y
\/////
/<
/\
936
<D
2p3/,
955
945
BINDING ENERGY, eV
CuO
(arm in
section II. 2.
rings.
933
935
934
BINDING ENERGY, eV
>i<i
iiii
932
20.0
931
975
965
955
945
BINDING ENERGY, eV
82
PHYSICAL ELECTRONICS
925
935
/W
937
.965
A
y \
Cu(PTH
r
938
975
y
915
19.8
XV/\
918
o
v
/e
935
925
i I,
<
.......
<<<<<<<<<
'
'
>P Y
' Copper,
' ' ' Cu' *as*29
Cu(LMM)
Mg Ka
!
I
I
486
479
406.8
t
N(E)
Cu 2pi/j
S25
350
400
450
500
300
Cu(LMM)
...
Cu 3p
Cu 3s
925
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
perKIN-elmer
83
>>
Zinc, Zn
>>!
Number
30
2014
995
2P3/2
Zn
1021.45
>
2013 (J
cc
994
LU
UJ
2012 O
I-
993
CL
<S)
2011
992
cc
UJ
UJ
2010
991
>
<
cc
cc
Q.
CC
UJ
<
(5
ui
<
H
LU
23.1
2009 o
990
1065
1055
1035
1045
BINDING ENERGY, eV
1015
1025
2008
989
5m
T
5CO
'Zn(PTKBFJ,'
988
2p3/2
ZnO
1021.7 A
987
986
985
Data presented In tabular form In Section II. 2.
*PT la C24Hj;N7, a llgand with three pyridinu
rings.
1026
1025
1024
G>
84
PHYSICAL ELECTRONICS
2p3/
1022
1023
1021
BINDING ENERGY, eV
1020
1019
23.0
1065
1055
1045
1035
BINDING ENERGY. eV
1025
1015
<
ii
<
<
* *
* *
<
< <
<
<
--
--r
-i
-i
Zn(LMM)
30
r-
Mg Ka
L3M45M45
L3M23M45
L3M23M
23 v,23
Zn2p ,/2
Number
---
-1
261.2
Zinc, Zn
Zn 2 pa,
348.4
427
340.0
L0M23M45
L2Mj5M45
325.5
238.2
N(E)
1015
460
'
__
'
_ -_
l_
410
_ --
L.
360
___
260
310
L.
210
Zn 3p
Zn 3d
Zn 3s
si
YrOiV '-jj
'
[015
1100
1000
900
800
700
500
600
BINDING ENERGY, eV
400
300
200
100
pebKIN-elmer
85
Gallium, Ga
Number
31
COMPOUND
'
GaAS>
Ga?
GaSb
25
20
Ga
Ga
Ga
'
'
'
...
....
Ga203
3p%
100
REF.
3d BINDING ENERGY, eV
15
>
..j
BINDING ENERGY, eV
105
S1
LBH
LBH
LBH
LBH
LBH
110
Ga
Ga203
Ga20?
Ga203
Gal3
GaBr3
GaF3
<E
86
PHYSICAL ELECTRONICS
/*v
BINDING ENERGY. eV
12
Gallium, Ga
Atomic
Number
Al Ka
L3M23M4;
516.8
A 503.5
391.8
N(E)
670
570
620
370
420
470
520
Ga(LMM)
Ga 3p
.v-v
/=
1200
1100
1000
900
800
700
v'
.V\--;
f
''
- *M>V**'
500
600
BINDING ENERGY, eV
Ga 3d
Ga 3s
vife
400
300
200
100
PERKIN-ELMER
87
) \
)
)
\
>
> Germanium,
Ge
Number
COMPOUND
32
3d BINDING ENERGY, eV
25
30
>
REF.
35
Ge
Ge
Ge
GeTe,
GeTe
28.95
GeTe2
GeAs2
GeSe
GeS
GeS
GeSj
Ph4Ge
PhjGel
Ph3GeBr
Ph3GeCI
Ge02
___
_l
44
2p%
1215
Ge
Ge
Gel2
Ph4 G e
..
Na2Ge03
GeO
Ge02
K2GeF6
PHYSICAL ELECTRONICS
7'l 1
KV
___
L.
-I
34
BINDING ENERGY, eV
1225
0
MV
MV
' t
88
BINDING ENERGY, eV
1220
MV
MV
MV
MV
MV
MV
MV
MV
l_
24
i !' <<<<
,,,
'
Germanium, Ge cs32
111
1
-ri-1-1-1-1 1-1-[-1
'
Ge(LMM)
"
!1
L3M45M45
341.2
Al Ka
L3M23M45
L3M23M23
443.5
533 524
L2M4sM45
\433.0 L3M23M45
310.0
Ge 2p3/
Ge 2pi/2
N(E)
550
___
_]
L-
__
-1
1
1300
1200
1100
1000
900
800
700
600
1_
300
350
400
450
500
___
L_
500
1
400
300
200
100
BINDING ENERGY, eV
PHRKIN-ELMER
89
>>>>>
Arsenic, as
33
Number
1227
i | i
i~[
iiii i
[i i
| i i i r
1267
1266
1265
1264
1263
1262
-j 222
BINDING ENERGY, eV
UAsOOH
Me-iAsOOH
Na-HAsO
45
CD
90
PHYSICAL ELECTRONICS
43
42
44
3d BINDING ENERGY, eV
<<<<<<<<<
'
<<<<<<
< <
< <
UAwnonni/
rc
'
'
'
Arsenic, As
Atomic OO
Number
GaAs
As(LMM)
L3M45MJ5
Al Ka
261.0
L3M23MJ5
370.8
L2M45M45
225.4
334.5
N(E)
As 2py2
30
As 2p3
335
385
'
__
-1
L.
285
L.
_ I_ I_ L.
235
185
Ga
As 3p
1400
1300
1200
1100
1000
900
600
700
800
BINDING ENERGY, eV
500
400
300
200
As 3d
100
perKIN-elmer
0
91
>>>>>>
Selenium, Se
Number
COMPOUND
34
62
57
PbSe
PbSe
SnSe
SnSe
Bi2Se3
NbSe2
Nb3Se4
GeSe
As2Se3
Se
Se
Se
Se
Se
C,6H33SeSeC,sH33
BrC8H4SeC6H4Br
~(PhCH2)2SeO
(BrC8H4)2SeO
[HOOC(CH2)4]2SeO
.C16H33SeO(OH):r.:,
phSeO(OH)
M'
Ph2SeCI2
Na2Se03
Na2Se03
CIC6H4SeO(OH)
"H2Se03
f
1
[Se2
- /. /
Se02
CIC6H4Sed2(OH)
Na2Se04
Na2Se04
92
PHYSICAL ELECTRONICS
REF.
3d BINDING ENERGY, eV
52
>>))>>)))
SFS
WSP
SFS
WSP
DR
B3
B3
SFS
WSP
SFS
B3
CD
WSP
MTH
MTH
MTH
WSP
WSP
MTH
MTH
MTH
MTH
MTH
MTH
W1
WSP
MTH
MTH
MTH
WSP
MTH
W1
WSP
65
55
BINDING ENERGY, eV
,,,
PY
......
i
<
<<
SGlGniUrTl SG
'
A,Ofnic0
N(E)
>
Se3p,/2
M<M +4f7
Se 3p:
Se 3d
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
93
_> >
>.
>
>>
Bromine, Br
'
35
> >
3d BINDING ENERGY, eV
COMPOUND
67
>>>>>>>)>>>
PHO OELEC RON SPECTROSCOPY
HANUBOOK OF X-RAY
REF.
77
72
KBr
KBr
CsBr
RbBr
NaBr
Li Br
HgBr2
CdBr2
ZnBr2
C18H33Me3NBr
C3H5Ni(PPh3)Br
Pd(PPh3)2Br2
Pd(NH3)2Br2
Pt(NH3)2Br2
Pt(NH3)3Br2
Co(NH3)aSbBra
Rb3Sb2Br9
Cs3Sb2Br9
K2PdBr4
K2PtBr4
K2PtBrs
I
"
bromanil
bromphenol
KBr03
(D
94
70
v.
PHYSICAL ELECTRONICS
BINDING ENERGY, eV
f
s*&
<<<<4<<<<<<<<<
,
PV
<
<
<
< 1
Bromine, Br
* *
' *35
Number
KBr
Mg Ka
N(E)
Br 3s
1100
1000
900
800
700
500
600
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
95
Strontium, Sr
38
Number
3d
COMPOUND
130
SrF2
SrF,
BINDING ENERGY, eV
135
I I I >LI I I I I I
>>
HANDBOOK OF X-RAY
REF.
140
W1
143
133
BINDING ENERGY, eV
0
96
PHYSICAL ELECTRONICS
PHOTOELECTRON SPECTROSCOPY
I I
1
3Y
<4
< <
'
<
SPECTROSCOPY
<
<
<
'
<<<<
Strontium, Sr
'38
Number
123
i
700
600
500
BINDING ENERGY, eV
400
100
perkin-elmer
97
i I I I #
))>>)>>)
Yttrium, Y nt,z39
COMPOUND
155
y3o3
y2o3
YF,
3d5/3
>>*
,
BINDING ENERGY, eV
160
REF.
165
CD
NGD
W1
167
ti
CD
98
PHYSICAL ELECTRONICS
157
BINDING ENERGY.eV
147
<
,,<(<<<<<<<<<
<
<
<
*
*
Y
Yttrium, NAur;cr39
i
I I
Mg Ka
147
l
i
i
1000
900
800
700
600
500
400
300
200
100
BINDING ENERGY, eV
PERKIN-ELMER
99
>>)
Zirconium, Zr
I I I I I I I I
Atomic
Number
COMPOUND
175
40
3d%
BINDING ENERGY, eV
180
>>>*>!
j
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
REF.
185
3dV2
Zr
Zr
ZrHz
Zr02
178.7
3d;
W"".
Zr4(OH)alanineaCI8- 12H20
KjZrF,
K2ZrF6
Na2ZrF6
KZrF5 ;HjO
ZrF,
2.4
193
183
173
BINDING ENERGY, eV
<
10
100
i
PHYSICAL ELECTRONICS
4
ip r
< <
<
< <
<
,, .
Atomic A O
Number rU
<
"T
MasNjNja
Mg Ka
\1160
Zr 3dV2
MNN
1135
Zr 3d
m45n23v
1104
N(E)
Zr 3p3/2
i
Zr 3py2
173
Zr4p
x4
Zr4s
Ar
-JJ
I
0
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
rerkin-elmer
101
)))))))))))))))
Niobium, Nb
Number
)\)\
41
200
Nb
Nb
Nb
Nb
Nb
Nb
Nb
\)
HA>-
3d%
REF.
BINDING ENERGY, eV
205
210
202.2
NbH2
RH2
SPB
B3
MSC
FCF
NbC
NbO
NbO
Nb02
Nb02
KNbO
Nb205
Nbj0
NbBrs
NbCI5
K2NbF7
NbF5
<E
102
))
"1
COMPOUND
})\))))
NSC
NSC
RH2
SPB
FCF
FCF
SPB
MSC
SPB
MSC
FCF
NGD
MSC
MSC
MSC
MSC
Nt
N(E)
217
207
BINDING ENERGY, eV
197
1100
PHYSICAL ELECTRONICS
< <
<
<
<
PY
I I
<
<
<
< <
'41
Niobium, Nb
i
< <
I I I
Nb(MNN)
Mg Ka
N
m45Nj3n23
1118
M.1SN,V
Nb(MNN)
\ 1109
m.,5n23v
1086
mJ5vv
1054
N(E)
1140
'
1090
1040
Nb 3d%
Nb 3d%
Nb3p3/2
Nb 3pi
Nb 4p
Nb 3s
X4
iitii
**11 nyf'tn
Nb 4s
<
1100
1000
\
900
800
700
500
600
BINDING ENERGY, eV
400
300
200
U1/
100
PERKIN-ELMER
103
>
Molybdenum,
)
I )
I "i
Mo
COMPOUND
225
I I
i I
NAur42
3ds/2
GM
GM
GM
HB
MEC
GM
GM
GM
v-
C7H3Mo(CO)3
C7H7Mo(CO)3+BF4
MoCI2(CO)3(PPh3)2
HB
MoS2
MoS2
GM
MoCI3(PMe2Ph)3
MoCI3(C5H5N)3
Mo02
Mo02
MoCI,
-
MoCI4
MoCI5
MoCI2(NO)2(PPh3)2
MoCI4(PPh3)2
/1
:"MoOC:3(C5H5N)2';
Mooci3(pph3)2 ;
MoCI4(C5H5N)2 .J
MoCI bipyridyl
Mo02CI2 bipyridyl
Mo02 acac2
ft.
r
"
CoMo04
m6o3
'
(nh4)6mo;o2 4H20
\l1
AI2(Mo04)3
Mo03
Mo03
v.
~-
PCL
LB
CEL
PCL
KBA
GM
GM
GM
HB
HB
CEL
HB
CEL
CEL
CEL
GM
NSL
GM
PCL
PCL
_M
I
N(E)
E
240
230
BINDING ENERGY, eV
GM
0>
PCL
GM
240
230
BINDING ENERGY, eV
PHYSICAL ELECTRONICS
220
232.65
CD
104
HAN:
227.7
MoB2
MoSe2
Na2Mo04
Na2Mc04-2H20
235
'
REF.
BINDING ENERGY, eV
230
MO
Mo(CO)j bipyridyl
[C5H5Mo(CO)3]2
Mo(CO)4(PBu3)2
Mo(CO)5PPh3
>>>>>.>>
1100
Molybdenum, Mo
_ Mo(MNN)
Mo(MNN)
Atomic
Number
Mg Ka
1132
Mo 3d;
N(E)
Mo 3d:
1160
1010
1060
1110
Mo 4p
O Mo 3s
T
Mo4s
JL
1100
1000
900
800
700
500
600
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
105
>>>(
Ruthenium, Ru
Number
44
3ds/j
COMPOUND
275
285
1-
:c
Ru(NH3KN3Br5T,%';P5'"V;nRu(NH3)5N2CI2
Ru(NH3)5(MeCN)Br2
Ru(NH3)5(MeCN)Br3
Ruo2
RuOj V.
.
L '
Ru03
Ru04
'
1
1
1
3d%
CP
Ru(NH3)5N2I2
REF.
BINDING ENERGY, eV
280
Ru
Ru
Ru
>>>>>>>>>)>>>>
HANljBOOK
1
i
1
it.!
1
Ru
280.0
KW
F
BHH
F
F
3d:
F
BFM
BFM
KW
F
F
KW
KW
292
282
272
BINDING ENERGY, eV
<x>
1
i
106
PHYSICAL ELECTRONICS
<<<I<<<<<< <
' *
Ru(MNN)
<
Ruthenium, Ru
Number
44
M45N1N23
<
Mg Ka
X1102
Ru(MNN)
S.
m45n,v
1052
m45n23v
1023
M45VV
979.2
N(E)
272
_
---
_J
965
1015
Ru 3d5/2
Ru 3d
'3/2
Ru 3s
Ru 3p3/2
Ru3p./2j
x4
Ru 4p
In
<D
1100
1000
******
900
800
700
500
600
BINDING ENERGY, eV
400
300
200
100
perkin-elmer
107
CE
UJ
iE *:
wcocotnwwwmmmwm
zzzz_jz2zzzzzzz5zz5zzz
exzzzzzzz
cc
wtnmwtowo]
>
0>
'
>
O
cc
UJ
UJ
O o
Z
Q
CO
X)
fc
Li-?.*
tv.
<., rr>:
hm
o
- n"y
oOOO
mOOOOO
cc
cc
cc
n n
cc
<m
ID
O
a
O
ci
r>
ri
xz
rt
oo2
!!
CLCLQ-CLCLCLCLQ_D.Q_Q.CLCLQ.CL
_C
SZ
Q_
CL
CL
, CL
arcnarcrcrcccrci:
:V'j<
W
!-
occ x;q
X
< cc
o o
<<
OO
cc
cc
x: jc
a: a: oc tr.cc cc a: .a:
z
o
[ ${%?*
CM
o
-x
oo o O;
o
o
x: xi
Q. CL o O : ,x
> <
a)
cc
'
CO
r-M
o
2
>
cr
cc
cc
VT
OK
.- '"J I
cc
rt
a> XI
jr
_r
iO
, ~s. z
~r - o
X? X0
'X
oo
o
<
o
O Z O
cd
o XX o'zoz
X cd
X
Z-C-CC
.-0
UJ
i
x ft SZ SZ SZ x
Xrl XPI
SZ SZ SZ x: 'x: -C -C x: x:
XCI
iZjQC-'OCjOC X
DCia: OC X X X X/ x x
Q_
Q_
Z x
>
X
CO
4
PY
<
Rhodium, Rh
Rh(MNN)
'
'
'
'
'
Mg Ka
1031
M45N23V
M45W
1001
'
Number
'
m45n,v
V
'45
952.1
Rh(MNN)
300
1050
.1
L,
1000
Rh 3dS/2
1.1
900
950
Rh 3d
3/2
Rh 3p3/2
Rh 3pi/2
Rh 3s
x4
Rh 4p
Rh 4s
1100
1000
900
800
700
500
600
BINDING ENERGY, eV
400
300
200
100
PERKINELMER
109
>>
46
Palladium, Pd
>
>
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
Number
COMPOUND
3d5/j
Pdl2
PdBr2
K2PdBr4
K2PdBr4
Pd2(PBu3)2CI4
PdCI,
11
Pd(PPh3)2Br2
Pd(PPh3)2C03
7-~;
'-WlG
Pd(C5H5N)2CI2
Pd(NH3)2Br2
Pd(NH3)2CI2
!:
ii !
Pd[P(OPh)3]2Br2
Pd(NH3)4CI2
Pd(OAc)2
Pd(NH3)2(N02)2
K2Pd(N02)4
;
K2Pd(No2)4
K2Pd(CN)4
K2Pd(CN)4
r
'
-'.'r
jj-C
11
""Jljr
'
:'\b
""
Pd(CN)2
K2PdCI6
K2PdCls
i i.
<
110
" ""T
Pd(PPh3)2(CN);
K2PdCI4
K2PdCI4
-t
"
PHYSICAL ELECTRONICS
..." 'r *
- -*r
' 1
ny*:
v.
3d;
NZM
PdCI2
Pd(PPh3)2CI2
Pd(PPh3)2CI2
Pd
334.9
KBM
KGW
KBM
'
3d%
[Pd(C3H5)Br]2
Pd(C3H5)(PPh3)CI
[Pd(C3H5)CI]2
' !':
340
335
Pd
Pd
PdO
Pd02
REF.
BINDING ENERGY, eV
330
NZM
NZM
KBM
NZM
KBM
CAB
KBM
NZM
NZM
KGW
KBM
BNS
NZM
NZM
NZM
NZM
KBM
KBM
NZM
NZM
NZM
NZM
NZM
NZM
KBM
NZM
KBM
KBM
NZM
KBM
5.25
350
340
BINDING ENERGY. eV
330
<<<<<<<<<< <<<<<<<<'
I<<<<<<<<<<
'
W AMnn Anw nc v r a v ntiArnn
c/Tnni enermnf
HANDBOOK OF X-RAY PHOTOELECTRON
SPECTROSCOPY
Palladium, Pd
Atomic A CZ
Number 40
~l
Pd(MNN)
wuVV
925.6
M.5N,V
1011
Mg Ka
Pd(MNN)
_ L.
-I
N(E)
1050
950
1000
900
Pd 3d,S/2
330
Pd 3d
3/2
. :?
-
|_ i
'
Vfvf
\ r
Pd 3p3/2
rV
x4
Pd 4p
Pd 4s
0
1000
900
800
700
_L
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-EUMEIR
111
Alomic
Number T1 I
r r
I I 1 \
I I T
I i i
/\
360
cc
oi
357
O
h-
356
>
>
354
356
352
367.9
724
Afl ;0
6.00
721
y'
y/ \
y/
y/
AgOOCC
355
722
/y
LU
725
// //!
/ //I
//I
/
W/4\
/&y/
358
O
I t
723
359
>
> >
726
y -T"
361
A/
/>
y*
380
370
360
BINDING ENERGY, eV
3f
Ag.So"
/ A/ <A
371
.1111.
370
369
3d5/2
<X>
1 I 1 1
.111! -J. 1 1
368
367
366
BINDING ENERGY, eV
365
1 1
364
112
PHYSICAL ELECTRONICS
Silver, Ag
PY
Number
47
Ag(MNN)
Ag 3d,
Mg K a
Ag(MNN)
Ag 3d:
N(E)
1005
975
915
945
885
!
{
Ag 3s
Ag4p
Ag 4s
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
perkin-elmer
113
))))))))))))}))
Cadmium, Cd
*
Number
48
789
r T"T~T"
! i i
r rr1i
385
384
\ry
--rrr-
// / /
/ /\
/ /$$49//
// Y //
/
1///
/
/
:// /
;// /
/
<
404. i
787
Cd
3d-
786
383
785
382
O
a:
UJ
LU
381
CCI,
784
ArXdS
/ 'yy\
HI
380
6.
379
378
377
376
409
408
3d5/z
<x>
114
V
till
407
PHYSICAL ELECTRONICS
,,,, ,,,,
406
405
404
BINDING ENERGY, eV
l_i
-L..L
403
402
6.76
418
408
BINDING ENERGY, eV
398
)PY
CSClmiUm Od
-i1
11<
<
r~*
i
i
'ornic
M5Nj5N45
876.4
Cd(MNN)
MjNjsNaj
\869.8
Cd 3d
Cd 3d
Cd(MNN)
Cd4d
Cd4s
1000
900
800
700
600
500
400
300
200
100
BINDING ENERGY, eV
PERKIN-ELMER
115
>>>>>>>>>>>>>>)
Indium, In
Atomic
Number
/\ Q
----]---
855
3d%
>
443.6
I
I
In
oc
\~
Q.
cn
D
_i
Q.
CC
(
<
CC
<
CL
tr
LU
!
458
N()
448
BINDING ENERGY, eV
[NHjiInF,
449
448
447
3d5/2
<X>
' '
11
446
444
445
BINDING ENERGY, eV
' '4431 I
442
100(
116
PHYSICAL ELECTRONICS
PY
<
I i i
<
T
-r
>
<
<
(<<<<<<<
Indium, In
Atomic
Number
49
M5N45NJ5
In(MNN)
851.0
MgKa
VYI4N45N45
143.0
In 3ds/2
N(E)
J.
860
910
960
438
-1
__ 1
810
In 3d
3A
In(MNN). feiiSfes
In4d
r.v
msvm.
"M00j
25ss
Sskr
In 3P3/2
x4
In 4s
y yyM>Wii*
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
In4P
100
PERKIN-ELMEH
117
>>>
Tin, Sn
50
COMPOUND
480
3d%
BINDING ENERGY, eV
REF.
490
485
484.65
Sn
Sn
Sn
Sn
AuSn
SnSe
SnTe
Sn
3d:
SnPh4
SnPh4
SnPh4
SnS
SnS
SnS2
Snl2
SnBr2
8.5
Me4NSnCI3
Na2Sn03
500
SnO
480
490
BINDING ENERGY, eV
SnO
Sn02
Sn02
*Sn02 (NH4)2SnClasv
IT
3ds/j
\Ti
486.4
SnO
(C5H5N)2SnCI4v:
PhjSnCI
SnCI2
SnCI2-2H20
TIT
,Me2Sn acac2
ri
;: I
,i
[|
;(Ph3P)4SnCI .v:=rix,
(Ph3P)4SnF ''
SnF2
SnF2
SnF4
ui
;
'
'V
KSnFj
KjSnF,-
-it.; .,1-.
r'r:-vr' V -
:V
'I !
<X>
118
8.5
500
PHYSICAL ELECTRONICS
490
BINDING ENERGY, eV
480
i i
DP Y
<
X-RA HHOTOtLEC*niON SPECTROSCOPY
<
..ANofuOK |
---r
i
i I i
< <
I I
<
i i
< <
Tin, Sn ;X50
-1-1-1-1-1--r
1
Sn(MNN)
msn45n45
824.4
Mg Ka
M4N4SN45
815.8
__
_1
920
L.
870
___-
820
Sn 3d%
L.
770
Sn 3d%
480
"4SntMNN)Vyg
Sn 4d
x4
: mtKH
'
Sn 4s Sn 4p
<E
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-HLMER
119
3ds/j
BINDING ENERGY, eV
525
Sb
Sb
Sb
AlSb
BujSb
Ph3Sb
..JT"""'"'
r
'
530
SbjS5
Sb2S3
Sb2S3
Ph3SbBr2
Me3SbBr2
BuNH3SbI4
Sb203
_
Sb2Oj NaSbOj
"
SbS(C12H25)3
Sb(OAc)3
i
!i.i
Sb205
Sb205
Cs2Sb2I9
_
;.r
'.
___
,;
Cs3Sb2Clsvvfei|?|V-,
Cs3Sb2Br9"v>r
Cs2SbF5
CsSb2F7
CsSbF
K2H2Sb2OH2,,
SbCI5(POPh3)
KSbF6
NaSbF6
Et4NSbF6
$
120
PHYSICAL ELECTRONICS
REF.
3d5/2
535
PhjSbS
Ph3SbO
I I I I I
I
I
CD
MSV
SFS
MSV
BC4
BC4
BC4
BC4
MSV
MSV
BC4
BC4
BC4
BC4
MSV
BC4
MSV
MSV
MSV
BC4
BC4
BC4
BC4
BC4
BC4
BC4
BC4
MSV
MSV
MSV
MSV
MSV
BC4
BC4
Sb
528.05
3d-
9.35
543
533
BINDING ENERGY, eV
523
< <
< <
OPY
i i
<
'
Sb(MNN)
l" '
--
"1
M5N45N45
T '
* * * * *
Antimony, Sb
Atomic CH
Number 3 |
798.7
hYI4N45N45
(3P'/2)
Mg Ka _
Sb3dsA
789.5
(3pa/2)
Sb 3da/
890
730
810
N(E)
Sb(MNN)
523
Sb3pV4
Sb4d
x4
L i ic
Sb4s
b04s
nt
Sb4p
CD
i
1000
900
800
700
600
I
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
1?1
>>>>>>>>>>>>>>
Tellurium, Te
52
>>>>>>)>>>))>>>>
X-RAY PHOTCJtLECTnON SPECTROSCOPY
HANDUOOK Oh
Number
572.7
Te(H-HCSNH;);CI;
10.34
588
'|PhTc<cyCH*Br
578
BINDING ENERGY, eV
N(E)
E
568
</"p-MeOCflH4TeCl3
579
578
577
3dS/
<E
576
575
574
BINDING ENERGY, eV
573
572
100
\
122
PHYSICAL ELECTRONICS
I t
(<()<(<<<<
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
Tellurium, Te
i
Te(MNN)
Atomic CO
Number
>
m5n45n45
771.5
/\a
/ \
Te3ds/,
Mg Ka _
m4n45n45
761.2
T e 3d3/
N(E)
ilit
770
800
740
568
Te(MNN)
Te4d
x4
Te4s
Te4p
<D
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
perkin-elmer
123
locWlWs.'
COMPOUND
615
.
.....
3d%
625
620
Rb3Sb2I9J
3d%
619.5
REF.
BINDING ENERGY, eV
(
iodan
'''
MVS
MVS
MVS
MVS
MVS
N
N
N
OYK
T
W1
637
627
622
BINDING ENERGY, eV
I10(
124
PHYSICAL ELECTRONICS
<
PY
<
<
*<<<< <
**<<
Iodine, I ,is;53
Lil
M5N45N45
I(MNN)
748.1
Mg Ka
M4N45N45
736.4
N(E)
612
745
775
715
I3dV2
I 3d
l(MNN)
[
4d
(+LI)
x4
: 4s
<x>
1100
1000
900
800
700
500
600
BINDING ENERGY, eV
I4p
400
300
200
100
PERKIN-ELMER
125
>>>>>>>>>>>>>>
Xenon, Xe
Number
54
3ds/j
COMPOUND
665
Xe
Xe
Xe
Xe
(in C)
(in Fe)
(in Cu)
(in.Ag) XjS.
Xe?(iAu)W.
Na4XeOa
REF.
BINDING ENERGY, eV
670
)!
675
<D
W1
CH2
CH2
CH2
W1
673
678
BINDING ENERGY, eV
<J>
126
PHYSICAL ELECTRONICS
<
'
<
Xenon, Xe
m5n45n45
54
Xe in C
Xe(MNN)
721.5
Number
Mg Ka
M4N45Njs
708.2
I
720
700
710
N(E)
663
Xe 3p3/2
Xe 3d%
Xe(MNN)
Xe 3d %
Xe 4d
x4
V-V<
Xe 4s
Xe 4py2
<X>
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
127
>> >>>>
Cesium, Cs
Number
55
3d5/j BINDING
COMPOUND
720
CsOH
CsCI
CsBr
-V;
~'?s
Cs3P04
Cs4P207
CsCI04
1
1
I I
I I
I I I I I I I
REF.
CsOH
730
1
J
I
j,"
fes
ENERGY, eV
725
I I
cD
MVS
MVS
MVS
MVS
SGR
MVS
MVS
MVS
723.95
N(E)
E
743
<D
128
738
728
733
BINDING ENERGY, eV
723
718
11C
PHYSICAL ELECTRONICS
<
<
< < < < < < < < < <
Cesium,
3C0PY
--
-1r
M5N45N45
Cs(MNN)
698.4
CsOH
Mg Ka
3d,
MJN45N45
684.7
'
Atomic C I
Number Ox
C
VO
N(E)
m45n45v
718
Cs 4d
Cs(MNN)
usessSWi*?!
P'/2
Cs 4s
v.v
0
J1100
1000
900
800
700
500
BINDING ENERGY, eV
600
400
300
200
100
PERKIN-ELMER
129
>>
Barium, Ba
Number
778
BaSO<W
BaFr
'
v
>"
3d5/2
BINDING ENERGY, eV
783
REF.
779.65
cD
W3
W3
W3
W3
795
790
785
BINDING ENERGY.eV
PHYSICAL ELECTRONICS
788
800
130
56
COMPOUND
BaO
Ba erucate
Ba chloranilate
780
775
>
< <
iHANDBOOK
< <OF
<<
<
4<444<<<<
Barium, Ba
-r~
Ba(MNN)
Number
56
BaO
m5n45n45
668.7
Mg Ka
\M4N45N45
655.9
Ba3d
M45N45V
775
i
655
555
605
Ba4d
:Ba(MNN).-.
J\
'
'
\ Wv>;
-;v\
'
j
.
X4
Ba4p3.
Ba4p 1/2
Ba4s
1100
1000
900
800
700
500
600
BINDING ENERGY, eV
.
400
300
200
100
PERKIN-ELMER
t
0
131
)
i i,
,
r v
Lantnanum, La> :si)7
k i
COMPOUND
LaF,
i i
La203
> >
835
>>>)>>
HANulSOOK
t
X-RAY PHOl OELEC RON
UF
REF.
SPECTROSCOPY
3dV,
840
834.92
d>
W1
16.8
870
860
840
850
BINDING ENERGY, eV
830
820
r! i
Ji
:: I
!! !
$>
i
132
PHYSICAL ELECTRONICS
<<<<4<4<<< <
-PY
Lanthanum, La
Atomic
Number
57
La203
Mg Ka _
--T
1
La3d3/, La3ds/j
La(MNN)
=>a
820
La 4d3/j
La(MNN)
Jj La 4d5/z
x4
La 4p3j
La 4s
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
La 4py2
200
100
PERKIN-ELMER
133
>>
Cerium, Ce
Number
58
COMPOUND
ENERGY, e V
880
REF.
885
Ce
Ce02
CeO,
S=Satellite lines
895
905
BINDING ENERGY. eV
134
PHYSICAL ELECTRONICS
j
I
3ds/j BINDING
875
>>>,
1
)PY
<<<<<< <<<<<<<<<<
< II
'
'
<<<<<<<<<<
Cerium, Ce
Number
58
Ce02
Mg Ka
Ce 3d
'
N(E)
E
875
x4
Ce(M4sN45N45)
4>iHj
'yN
-jM
o a
4p
Ce
I'
Ce 4d
C0(M45N45V)
Na
*
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKINELMER
135
bknikriumSin ix o2
COMPOUND
3d5/,2
BINDING ENERGY, eV
1080
1085
Sm
Sm203
SrrijOj
*
REF.
1090
DKM
DKM
0
1096
1086
BINDING ENERGY, eV
136
PHYSICAL ELECTRONICS
Samarium, Sm
Atomic
Number
Sm203
Mg Ka
Sm(MNN)
Sm 3d;
N(E)
310
360
410
460
Sm(MNN)
Sm 4d
1100
1000
900
800
700
500
600
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
137
))>))))))>>>))
Terbium, Tb
Number
COMPOUND
4d5/j BINDING
145
>
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
65
ENERGY, eV
150
REF.
155
0)
Tb
190
180
170
160
BINDING ENERGY, eV
l I
<x>
!
138
PHYSICAL ELECTRONICS
150
140
I
SuOPY
4<<<44<44<4 <
Terbium, Tb
Number
"b
Al Ka
Tb 3d%
Tb 3dV,
V
N(E)
140
\
Tb(M45N45V)
Tb 4d
Tb(M45N45N45)
CD
1300
1200
I
1100
_ L_ i_
1000
_!
900
800
600
700
BINDING ENERGY, eV
200
100
PERKIN-ELMER
13
Erbium, Er
Atomic
Number
Q
UU
----1---r
COMPOUND
4ds/j
165
Er
Er203
Er203
BINDING ENERGY, eV
170
REF.
175
4d
169.2
<D
NGD
(D
180
160
170
BINDING ENERGY, eV
168.5
0
180
140
PHYSICAL ELECTRONICS
170
BINDING ENERGY, eV
160
<(<<<
Erbium, Er
PY
68
Number
Al Ka
o
N(E)
yl
160
Er 4s
and
ErtM45N45N45)
V\
Er 4pVa
Er(M45N45V)
Er4d
xyi
Er(M5VV)
\ Er(M4VV)
Er 5p A
<E
160
1000
900
800
1
700
1
600
III!
500
BINDING ENERGY, eV
400
300
200
'
100
PERKIN-ELMEH
141
1)1)1 ))))))))))
Atomic 7Q
Hafnium, Hf Number
t L
COMPOUND
10
4f%
BINDING ENERGY, eV
15
Hf
)))))))))))))))
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
REF.
20)
CD
W1
HfF<
210
Hf02
Hf4(OH)Balanine8CI8- 12H20
4d5/2
BINDING ENERGY, eV
215
220
NGD
KNP
1.55
25
15
BINDING ENERGY, eV
<
1000
142
PHYSICAL ELECTRONICS
< <
PY
<
<
<
<
<
<
<
Hafnium,
*Hf ' '72
'
Number
Hf 4d
Hf 4d
1000
900
800
700
600
500
400
300
200
100
BINDING ENERGY, eV
PERKIN-ELMER
143
>>>>
Tantalum, Ta
Number
COMPOUND
73
4f7/z
20
Ta
Ta
Ta
ias,
JaSj
TaSi2
T a5Si3
KTa03
r.--;
r.uc:
:P%
"a B1*5
TaCi,
TaF5
K2TaF7
'. ;-V.
'' 'T'
'
:.g-'
I t
I t
30
i
<D
RH2
MSC
RH2
MSC
MSC
MSC
MSC
MSC
MSC
NGD
MSC
MSC
MSC
MSC
25
BINDING ENERGY. eV
<D
144
PHYSICAL ELECTRONICS
REF.
BINDING ENERGY, eV
25
I I t
<<<<I<4<4<<<<<<<<<<<<<<<<<<<<<
.
Tantalum, Ta Alomic
Number
Al Ka
Ta 4d,
Ta 4f
Ta 4d:
\-
Ta 4s
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
145
..
>>
/\
~7
Tungsten,
W
Atomic
Number
4f%
30
WB
'
WC
WC
WN
wo2
W02
'
IJ ;
..
.L ; -V.
-
''
? -y '
':0?Y-
WOCI4
146
PHYSICAL ELECTRONICS
1
I
1
1
1
1
i> .
'i
& mmmm
W Br.
r*
ai2(W04)3
ai2(W04)3
(NH4)6W7024-4H20
WCI4(PMe2Ph)2
k2wci6
W03
wo3
W03
wo3
wo3
wo3
wo3
H2W04
LI.WO.
NiW04
REF.
40
35
WCI4(PEt3)2
BINDING ENERGY, eV
ws2
>>
COMPOUND
w
w
w
w
>*
___
_1
rr1?
.t.'
45
L.
_ --
_l
35
BINDING ENERGY, eV
L.
25
4
)PY
I 4
Tungsten, W
Number
74
Al Ka
1000
900
800
700
600
500
400
200
100
BINDING ENERGY, eV
PERKIN-ELMER
147
Rhenium, Re
75
COMPOUND
43
ReCI4(Et3P)
k2ReCI8
KRe04
r.
.'-VV;
48i
<D
F
F
F
F
LB
LB
ReCI2(PMe2Ph)4
ReCI3(PMe2Ph)3
ReCI4(PMe2Ph)2
KjP.eCIs
y.
sv"
LB
LB
LB
LB
CH1
W1
44
BINDING ENERGY, eV
CP
148
PHYSICAL ELECTRONICS
REF.
BINDING ENERGY, eV
Re
Re
ReCiN2(Ph2PCH2PPh2)2
"
'
ReCI N2(PMe2"Ph)4
ReOCI3(PPh3)2
ReCIN2(PMe2Ph)4
> ,>
i
4f%
38
(I
,PY
n <<< <
(<<<<
Rhenium, Re
Atomic "7C
Number f O
Al Ka
Re 4f %
Re 4f:5/2
'
N(E)
Re 4d%
Re 4d3
Re 4p3
Re 4s
<X>
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
149
>>>
>>>>>>>
Iridium, Ir
77
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
Number
COMPOUND
60
Ir
Ir
Ir
Ir(PPh3]2CIN2
Ir(PPh3]2CI02(CO)
,Ir(PPh3] 2CI(CO)2
Ir(PPh3) 2I02(C0)
Ir(PPh3) 2CI(CO)(C2F4)
Ir(PMe2Ph)3CI3
Ir(PPh3)2CI[C2(CN)4]
KIr2(CO)4CI4
K2Ir2(CO)4CI5
...
Ir(PMe2Ph)2CI4
Ir(PEt3)2CI4
IrCI,
;Ir(CO)3CI
Ir (ethylenediamine)3I3
4f%
REF.
BINDING ENERGY, eV
65
70
I
.
N(E)
Ir (ethylenediamine)3(SCN)3_
BINDING ENERGY, eV
Ir (ethylenediamine)3(N02)3
Ir (ethylenediamine)3CI3
Ir (ethylenediamine)3(N03)3
'
---
rK3IrBr6
.....
~K3lrCI8
!K2IrBr6
'
K3Ir(CN)6
K2IrCI3
J<2IrCI6
:K2IrC!s
"
;K3Ir(N02)6
:(NH4)3IrCI6
(NH4)2IrCI6
KIrCI5(NO)
10C
150
PHYSICAL ELECTRONICS
Iridium, Ir
Number
77
Al Ka
Ir 4f
Ir 4f,
N(E)
0
1000
900
y
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
151
<
o
o
LU
LU
CMO>
ULU
cr
a: cr cr
m
oo
o
>o>9oo
5<222
Q-Q<
<
>cl>>clclcocl
mm
cccnirLUiiJixuJiLiJLiJ-iLUir-imcnoo
exaroocrccxcrcrxo
' '
CD CD
>
0>
':- '4
i.
o
cr
i.
UJ
LU
"
"
CD
I
I"
#,:;.#
!'.
.
|.
t.
'*4
CO
>pff
. -l
T
rvi
c*
.c
_c
CL CL
r>
3 _c
cl
mm
-T
Xr* Xcn
0 .C
<N
oaOO
OQ
_cj
2 an "i
r*
r*
r*
noo
rsi
rj
r>
LvL;Oi
_
r JT - -
n n r r r pr n r l
<n
n
m cl CL CL
mammmm
a.
5
<N
ooO
CS
ma,g.
<
o
x.
Tf
i*-
o'
CL CL CL X X X X Q- X LU O O
X X CL O Q-X m
O CL O O
-> .+_<
0- CL CL CL CL CL CL CL. CL CL DL CL CL CL *:.X CL clcl
*-'
o
GC
:'
C<
o
z
SEt-.'1?
-t
S-;!
<D
to
CO
>I
. QJ
O O O 2 UJ
CL bcC CL
CM
IX)
<
'
Platinum, Pt
Number
78
Mg Ka
500
BINDING ENERGY, eV
400
300
200
100
PEHKIN-HLMER
153
> Gold,
> > >
. Au( najs;79
ENERGY, eV
4f7/j BINDING
COMPOUND
>
80
AgAufeMr
aiau2
AljAu
...
.....
AI2Au
Ga2Au
SnAuppy;
AuCN r a .
AuCI
NaAuCI,
....
'
'-v'- *
.
"
...
--
11
REF.
r
'
90
85
Au
Au
Au
,
i i
JHB
FKW
MKL
LPY
WHP
FKW
FKW
WHP
WHP
FHP
FHP
KI2
KI2
KI2
87
BINDING ENERGY, eV
<E
1C
154
t
PHYSICAL ELECTRONICS
i
)PY
<<<<< <
Gold, Au
' 79
Number
Mg Ka
Au 4f7A
77
Au4d
Au4d
Au 5p3/.
500
BINDING ENERGY, eV
100
PERKIN-ELMER
155
>> >>>>>
Mercury, Hg
Number
COMPOUND
98
Hg
Hg
Hg
80
4f%
BINDING ENERGY, eV
103
REE.
108
CP
SMB
99.7
BM
113
103
BINDING ENERGY, eV
<X>
156
PHYSICAL ELECTRONICS
I
OP Y
<(<<<
Mercury, Hg
Atomic 0
Number OU
Mg Ka
93
Hg 4p3
Hg 4py
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
157
Thallium, 11
I W"i
K
Atomic
Number
COMPOUND
115
TI,Si
UI
>
4f%
I I l l l I
.......
>
)>>>.>>.. >
125
122
BINDING ENERGY, eV
158
PHYSICAL ELECTRONICS
REF.
BINDING ENERGY, eV
120
Thallium, T!
Atomic
Number
Q-f
OI
Mg
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
159
>> >>>>>>>>>>>>>>
OQ
Lead, Pb
COMPOUND
135
Pb
Pb
Pb
Pb
Pb
Pb
PbTe
PbSe
PbS
F>bS
1,
Ph<Pb
_iL
Pblj
PbO
PbO
PbO
PbO "
pb3o4 ;
'
.Pb30
PbOj
i; ;
Pb02
Ph3PbCI
PbF2
<x>
160
Atomic
Number
PHYSICAL ELECTRONICS
4f Vz BINDING ENERGY, eV
140
REF.
145
136.6
Pb
LKM
BM
MWM
SFS
KOW
SFS
SFS
SFS
MV
MV
MV
KOW
0
MV
TT
MV
KOW
KOW
MV
MV
MV
4.94
150
140
BINDING ENERGY, eV
137.5
MV
130
PbO
4.9'
150
140
BINDING ENERGY, eV
130
OP Y
<
Lead, Pb
Pb(NOO)
1
N7OJ5O45
--
Pb 4f %
1160.45
Pb 4f
NgOasOas
Alomic QO
Number fi/
Mg Ka
1157.15
x0.1
N(E)
130
'
>
1150
y>*
yVn
Pb 5d
<D
130
Pb 5p
J.
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
161
Atomic
Number
COMPOUND
4f%
155
BINDING ENERGY, eV
160
REF.
165
Bi
Bi
Bi
BY-;r
Bi
Bi
"A.
Bi2Te3
Bi2Se3
Bi2S3
Bi2S,
ISb, v.II#S|':
r2o3
Bi203
BijOj- 2H20
BijMoO
in a di u3
(BiO)2Crfo7l;
Bi2Ti207
BiOCI
Bi2(S04)3-H20
BiF.
$
162
PHYSICAL ELECTRONICS
7~.
'.f
"
160
BINDING ENERGY, eV
((<<<<<<*
(<<<<<
Bismuth, Bi
>y
Number
83
Bi 4f %
Bi 4f
Mg Ka
N(E)
150
Ri ArL
Bi 4d
Bi 5d
<D
I
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
163
I I I I )
Thorium, Th
Number
COMPOUND
330
I I I
III)) )))))))))
90
4f%
BINDING ENERGY, eV
335
REF.
3403
FBW
W1
VLD
W1
.
5d%
BINDING ENERGY, eV
85
Th
Th ox
Th ox
ThOj
v
'
Th(OAc4)
Th3(P04)4
ThBr4-10H2O
tTh'u
Oxide
Oxide
<D
80
FBW
FBW
VLD
NGD
NMS
NMS
NMS
NMS
NMS
NMS
NMS
NMS
9.2-
330
340
350
BINDING ENERGY, eV
ThF
336.25
9.3
350
164
PHYSICAL ELECTRONICS
(D
(ThF4
VT hF
.'JhCI4
333.05
Th
Th
Th ox
".Th ox
iThOj
340
BINDING ENERGY, eV
330
H>
:opy
<
i
'
<
<
<
' * ' *
<
<
Th
'
<(<(<<
Thorium, Th
Number
90
Th 4f7/
%
4f%
Mg Ka
Th 4d3/2
330
Th 4d
Th 5d,
Th 5d
Th 5s
330
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
165
Uranium,
4f7/j2
375
u
u
U./Y
L-v
1
1
U02
U02
'<
k2uFs;tff
.i
y/ .
ji,
'$
....
:'
i'
UF4
CD
VRP
AT2
FBW
FBW
AT2
VRP
CG
CG
CG
<J>
166
>
> >
377.2
VRP
PMD
PMD
10.85
394
ji
\:i
'
yO
385
-'.Til-'"' ;
UOj
'V/.r-
REF.
BINDING ENERGY, eV
380
Im
Number
COMPOUND
u308
I t
PHYSICAL ELECTRONICS
384
BINDING ENERGY, eV
374
PY
<<<<I<<<<<<<<<<
<<<<4<<<<<<<<<
[
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY
Uranium, U
Number
92
Mg Ka
U(N67045V)
n(E)
1000
900
800
700
600
500
BINDING ENERGY, eV
400
300
200
100
PERKIN-ELMER
167
!>>
ACKNOWLEDGEMENTS
168
PHYSICAL ELECTRONICS
<<<< <
<
Fluorine, F
*
Atomic
Number
Compound
LiF
LiF*
NaBF4
c4f5>
CF0)
(CF2)n
Ni(OOCCF3)2
NaF
MgF2
(nh4)3aif6
Na3AIF8*
k.aif*
Na2SiF6
CoSiF6
CaF2
"
Na2Ti Fa
7.
..
"K3FeF6
Fe(MPT)PF6a>
NiF2
"NiF2*
CuF2
CuF2
1s
kl23l23
684.9
684.6
686.8
687.2
689.2
689.1
688.2
684.2
685.3
684.5
685.3
685.1
685.8
685.8
684.6
654.9
655.8
653.0
656.7
653.1
652.1
653.1
655.2
" 684.8
'
"
""
<
i 4
77685.1
7.
KjTiFe*
f-MnF2*
< <
684.6
683.8
686.1
684.9
684.8
684.1
684.5
'
654.3
655.4
"
654.3
654.4
+ hu
1339.8
1340.4
1339.8
1343.9
1342.3
1341.2
1341.3
1339.4
1339.6
1339.9
1339.6
1339.5
1339.0
1340.3
1340.2
653.2
654.5
655.6
7;"7 655.3 *"1340.4
.'! 655.9 '* 1340.7
655.7 . 1340.3
'1340.0
656.2
1340.4
654.3
1340.5
655.6
1340.6
655.8
1341.3
657.2
1340.9
656.4
"
.......
....... .......
. . . . . . . ....
'
Ref.
Compound
1s
KL23L23
a + hu
O
VV1
ZnF2
ZnF2*
Na2GeF6"
684.3
684.8
655.8
655.8
654.2
656.5
656.0
655.3
655.4
659.5
656.0
656.4
656.6
654.6
654.1
654.0
656.4
1340.3
1340.6
1339.9
W1
W1
W1
W3
W1
W3
W3
W1
W1
W1
W3
W1
W1
"i
j
"1
i
|
3W3 "1
';W1 V
VV1
'""W1
"
"
W1
GW
W1
GW
W1
'
Ref.
GW
W3
685.7 _
W1
1341.3
W1
7~T 684.8 V
'SrF2
1341.1
685.1
W1
YF3
1340.1
684.8
W1
Na2ZrF67 .
1340.6
685.2
W1
K2NbF7"
1342.0
682.5
AgF
GW
684.4
1340.4
GW
CdF2
""-77
77
684.2
73~
.
W1
7
7
.1340.6
CdF2
685.0
.7r\ 341.6 . : W1
'.v.'V .
InF3
- 1339.7
;.
W1
NaSnF3* v. " : 7 . 685.1 ""
"
1339.5
686.4
W3
KSbF6
1339.7
685.7
W1
CsF
683.5
1340.0
W1
BaF2
----T684.33r658.2T1342.5 :;syW1
XaF3
: 684.4
341.8
657.4
W1
,PrF3
X.7'v
684.6 -# 657.2 J'l341.8W1
NdF3* " *
"684.4 """'657.2
1341.6 "'W1
SmFj'
1340.7
685.2
655.5
W1
HfF4*
655.2
1340.2
685.0
W1
K2TaF7*
"""77
""'"658.7
683.4
'1342.1
W1
77"
PbF2
657.2
Wl
1341.9
684.7
7ThF4
"
""
"
-177'
'
'
'
"
"
"
'
'
I
'
a) MPT
<
poEnKINI-l Ik/terra
>>>> >
Sodium, Na
Number
1s
kl22l22
1071.5
1071.8
1072.5
1071.1
1071.4
994.4
994.5
990.0
988.8
990.4
990.8
991.4
990.2
990.0
990.0
990.0
990.7
990.6
990.6
990.0
989.6
987.3
Compound
Na
Na
Na ox
NaF
NaCI
NaBr
Nal
NaOAc
'
Na2C03
NaHC03*
NaOOCH*
:Na2C204 a.
i' _y*
Na thioglycollate*
Na EDTAa)*
NaN02*
tfNaNOj
"vNaBF4
.?,
t Na3AI
Na2SiF6
Na2TiF3*
Na2GeF6
11
1071.6
1071.5
1070.8
1071.3
1071.1
1070.9
.1070.6
1071.0
1070.6
1071.4
1071.2 1072.5
1071 .7 f
1071.5
1071.4
1071.5
'
988.4
987.9
988.7
988.3
a) NaEDTA
b)
Chloramine-T = CH..C,H,SO,NNaCI
<D
170
PHYSICAL ELECTRONICS
+ hu
Ref.
Compound
2065.9
2066.3
2062.5
2059.9
2061.8
KL1
BS
Na2ZrF
Na zeolite
BS
W3
W3
NaP03
Na2HP04
Na2S02*
Na2S203*
Na2S204
Na2S04
2062.4
2062.9
2061.0
2061.3
2061.1
2060.9
...2061.3
2061.6
2061.2
2061.4
2060.8
2059.8
W3
W1
W3
W1
W1
W1
. W1
W1
W1
W3
T'ws
W3
.2060.1 ;:W3
2059.4
2060.1
2059.8
~"W3
W3
W3
1s
1071.4
1071.6
1071.6
1071.4
1071.2
1071.4
1071.0
1071.0
..
Na benzenesulfonate* 1071.1
Chloramine-Tw*
1071.6
1071.0
Na2Cr04
1071.4
Na2Cr207*
1070.7
NaAs02
1070.6
Na2Se03
1070.7
Na2MoO;
:
""Tf; 1071.6
Na2PdCI4*.
"
'.N a S n O 3 H 0 * I
1070.9
2
7
2
*'.,
:Na2Te04
? 1070.9
1071.1
Na2W04*
1071.7
Na2lrCI5-6H20*
1071.1
NaBi03*
"
"
'
kl23l23
a + hp
Ref.
988.8
989.0
989.4
990.1
990.4
990.3
990.8
2060.2
2060.6
2061.0
2061.5
2061.6
2061.7
2061.8
W3
W3
W3
CD
W3
990.0
989.9
989.2
991.1
990.6
990.8
991.1
990.2
990.4
, 990.5
2061.0
2061.0
2060.8
2062.1
2062.0
2061.5
2061.7
2060.9
2062.0
2061.4
990.6
989.4
991.1
2061.7
2061.1
2062.2
W3
W3
W3
"
W1
W1
W3
W1
W3
W3
W3
W3
W1
W3
W3
W3
W1
j
I
<<<<<<<<<<<<<<<<
I
Copper, Cu
Number
Compound
AI2Cu
CUjO
CujO*
Cu20*
CuCN
CuCI
CuCI
'
Cu2S
CuC03r"
CuO
'
CuO*'
CuO*
....
l3m45mJ5
918.6
919.2
919.0
919.2
918.2
"
'
CuF2
CuF2
CuSiOj
CuS04 aq
CuCI2*
CuCI2*
'
CuPT(PF6)2a)
CD
.
Number
(!)
S3
GW
MRC
kpm
FKW
W3
FKW
GW
':
MRC";
W3 ]
W3
'
GW
W3
W3
wi
MRC 4
gw ;
S3
W1
GW
;
W1
q
GW "*'i
W1
W1
"'
Zn
Zn*
Zn*
Zn *
Zn*
Zn*
Zn*
Zn*
Zn*
ZnO
ZnO
ZnO*
Zn ox
Zn ox
Zn acac2
ZnF2 .
11 2
:
'
Zns ; 7;-""
ZnS
'
ZnBr2
Znl2
'
30
" '
1021.4
1021.7
1021.5
1021.7
1021.8
1021.6
1022.1
1021.9
1021.4
1021.7
1022.5
1022.5
1021.8
1021.9
1021.2
7 1022.4
V 1022.2
Ref.
2013.8
992.4
2013.9
992.2
W3
2014.2
992.7
S1
2014.3
992.6
CE
2013.8
992.0
KL2
2013.6
992.0
KPM
992.0
2014.1
GW
992.3
2014.2
HF2
992.5
2013.9
MD
0
988.8
2010.5
2010.2
GW
987.7
987.6
2010.0
HF2 :
W3
988.2
2010.0
989.1
2011.0
CE
W3
987.9
2009.1
986.7 ?: "2009.1 :,"-W3 "7
986.2 S72008.4 -i.V: GW :<
"
2010.6
HF2 :
988.2
GW
989.7"""""2011.7
W3
2010.7
987.5
GW
988.7
2011.6
988.5 7 "72009.6" ?-: wi "
991.3':7; 2011.3 %'i* HF2
'
'
'
r- qr" "V1022.4
1022.0
1023.2
1022.9
1021.1
ZnPT(BFj2a,:.Sr?:7-"
'
1022.0
ZnTe
a -f hit
l3m45m45
2P%
Compound
Ref.
a + hu
1851.0
1851.2
932.0
1851.4
932.4
1851.4
932.2
1850.8
932.6
1851.3
932.5
918.8
1851.2
932.4
918.8
1851.9
918.3
933.6
1849.6
932.2
917.4
1849.8
932.2
917.6
1849.1
932.2
916.9
1847.6
932.9 .
914.7
1848.0
915.8
932.2
1847.6
915.2
932.4
1849.9
932.3
917.6
7934.8 "" 7 916.5 77:; 1851.3 "7
.1851.4 %
.. 933.5.. ......917.9
1851.7
918.3
933.4
1850.9
917.9
933.0
1851.8
936.8
915.0
1852.1
916.2
935.9
1850.1
915.4
934.7
935.3 :> 916.1. -n 1851.4 J
1849.9
934.2 : 915.7
1850.3'
915.3'
935.0
1849.9
933.8
916.1
932.4
<<<4<<<<<<<<
Zinc, Zn
29
2PVz
Cu
Cu*
Cu"
Cu*
Cu*
Cu*
Cu*
< <
"
'
'
>
PER KIN-ELMER
171
>>)>>>
Arsenic, As
Compound
As
As
As
"NbAs
GaAs
')
As2Se3
"
Vv'
MeAsI2
As2S3
41.3
41.3
41.6
1225.4
1226.3
1225.2
1226.2
1225.6
1223.5
1223.1
1222.5
1222.2
1222.9
1221.3
1220.2
1219.5
1218.3
1219.1
1219.0
"
Me3AsS
AsBr3
As203
As203
2o5
-;NaAs02
__.....
Na2HAs04
Ph3AsO*
. i-'J
~"
42.2
V ' 43.9
43.8
45.1
I*-T
r*3- *r 'if
44.2
'44.8
#46.0
Mi44-0
45.3
Ph2AsO(OH)*
44.1
44.2
?PhAsO(OH);*TpSJk45.0
* * *
a + hu
...
'
'Mi
KAsF9a)
1218.6
1214.0
>>
W1
RWJ
BWW
BWW
1263.0
1261.6
Ag
Ag*
Ag*
(D
BWW
BWW
BWW
BWW
BWW
BWW
... BWW
BWW
BWW
BWW
'
"
'
"
'W1
.V'i.BWW
,4:i:-,.:-i.
Ag*
AlAg,
Ag20
Ag20
AgO
Ag
.
AgO
Agl ;
AgOOCCFj
367.9
368.0
368.1
368.0
;, :
"
367.9
368.4
367.6
367.7
"
367.4
367.8
367.8
368.6
368.1
_ 367.7
m4n45n45
a 4- hu
358.1
358.4
358.2
357.8b)
358.0
358.0
726.0
726.4
726.3
725.8
725.9
726.4
724.5
724.5
724.0
724.8
723.5
356.9b|
356.8
356.8b|
357.4
;! 355.7
367.2
"
'7
> >
Ref.
O
W3
""
S2
GW .
355.3
354.4
355.3b|
723.9
722.5
723.0
FKW :
'
FKW_;
GW
S2
GW
S2
W1
'\:J
-:j
356.3b> -K-724.1
W3
W3
_GW
GW
W1
W1
BWW
BWW
"bww"
bww
BWW
W1
Cadmium, Cd
CdSe
CdS
Cdl2
CdO
Cd(OH)2cl
CdF2
CdF2
Number
.. .
'
404.8
404.7
404.7
T 404.8
405.1
: 405.1
405.2
404.0
404.9
405.7
405.6
48
m4n45n45
3d5/2
Compound
Cd
Cd*
Cd*
CdTe
CD
Ag2S04
Ag2S04
'47
3d 5/,
Ag*
>**>>>>
Compound
Ref.
1219.2 '#1263.0
44.4
47.6
Silver, Ag
1266.7
1267.6
1266.8
1266.8
1266.3
1266.3
1266.4
1265.8
1265.5
1265.8
1263.5
1264.1
1263.3
1263.4
1263.3
1263.8
263.6
:&1217.6
263.6
1219.6 :
""
1217.3
1262.6
1263.8
1219.7
1263.4
1219.2
"J218.6 "7'.'1263.6
4BuAsO(OH)2|
SP&44.9 i#1218.5
t(PioH21)2AsO(OH) 33$g?<t3.8
Me2AsO(OH)
33
l3m45m45
"42.9
~As4S4
Ph3As
>
3d
40.6
40.7
42.8
43.3
43.3
43.3
Aslj
_Ph,AsS
Number
383.9
383.9
384.2b)
382.7b)
381.7b)
"
"
"
Ref.
788.7
788.6
788.9
. 787.5
, 786.8
CD
W3
GW
GW
GW
4-786.5
...GW
786.5
786.5
785.1
""
784.8
. 784.6
GW
GW
W1
GW
W3
'
. ,_381.4b|
381.3b|
382.5b|
380.2
379. 1b)
379.0
a + hu
'
!
i
.
i
172
PHYSICAL ELECTRONICS
<<I<<4I<4<<<<<<<<<<<<<< <
Indium, In
In
In
In
InTe
In2Te3
InSe
In2Se3
InS
In2S3
Inl3
InBr3
InCI3
ln20
ln203
ln203
In ox '.7
In(OH)3 :
InF3
(NH4)3InFs
3d 5/2
M4N45N45
a + hu
443.6
444.0
443.6
444.1
444.3
444.8
444.6
444.3
444.5
410.6
410.6
854.2
854.6
854.5
853.5
853.4
853.0
853.1
_ ..
.
'
...
m4n45n45
492.4
491.7
492.0
498.7
573.7
Ph2Te2
498.4
575.6
PhTeI3
497.8
575.2
Ph2TeI2
497.8
575.1
Et2TeI2
497.8
575.4
Me2TeI2*
576.5 ; 497.5
TeBr4
497.0
"576.4
PhTeBr,
497.3
575.0
R*Br- a)
497.2
576.1
(FC6H4)TeBr3* .
496.8
575.8
MeCsH4TeBr2*
496.7
576.4
BuTeBr3*
496.9
576.0
Ph2TeBr2*
'}
:r
497.3
575.9
---'v
Te02
'V. 495.7
577.1
S-L'
Te03
576.5 ? ?: 495.7
Te(OH)6
576.9 "'496.5
Te ox*
496.5
576.6
Na2Te04
496.3
576.7
TeCI4
""
576.0
496.5
Ph2TeCI2
496.1
576.5
(p-MeOC6H4)TeCI3
498.9
Te tu2 Cl2
.. ... 574.1
496.8
576.1
Te tu tm CI*
497.0
576.3
(NH4)2TeCI*
496.8
575.9
(p-MeCaH4)TeOOH
572.7
Te
Te
Te
W3
LAK
W1
;
wi
;
409.1
i
W1
408.2
W1
408.5
W1
852.8
408.5
W3
852.0
407.5
"851.6 7 ;w3
"<.-"445.6 " 406.0
850.8 " W3
I
445.8
405.0
j
W3
850.5
405.9
444.6
W3
850.6
404.8
445.8
W3
851.1
407.0
444.1
851.6
LAK
406.9'
444.7
"'"444.1 -".5/406.6 sT?"850.7 i;W3 -P.]
'
445.3 .L'38 .406.4 .in*- ;851.7 - : -3W2
"
850.0
W1 j
405.2 .
444.8
"
"850.0
W3
"404.2
""445.8
W3
849.7
404.3
445.4
410.9
'409.4
3d s/j
Compound
Ref.
InCI
' '
'
Tellurium, Te *"52
49
Compound
<
573.2
572.9
**"
"
Ref.
1065.1
1064.9
1064.9
1062.4
1064.0
1062.9
W3
BWI
BWI
BWI
BWI
1062.9
1063.2
1064.0
1063.4
1062.3
1063.3
1062.6
1063.1
BWI
BWI
BWI
BWI
BWI . i
BWI i
BWI
BWI
BWI
"
1062.9
"
a + hu
:]
.. 1062.8 % v BWI ]
1062.2 .'TO rlBWI J
W3
1063.4
1063.1
W3
1063.0
BWI
BWI j
'1062.5
""
"
.1062.6
1063.0
1062.9
1063.3
1062.7
BWI J
!
BWI .. i
BWI
1
BWI
BWI
CD
PERKIN-ELMER
173
))
>
'
Ii
174
PHYSICAL ELECTRONICS
<<
l<
<<<< <<<<<<<<<<
A
AC1
AC2
AT1
AT2
B1
B2
B3
B4
"BAL
BC1
BC2
BC3
BC4
BCD
BCW
BDT
BF
BFM
BGD
BHH
BM
BMG
BNS
BP
BS
BWI
BWW
BZ
CAB
CDB
<4<<<<I<<<<<
CDH
~'
941 (1974)
CE
"CEL
CFK
CG
CH1
CH2
CKA
CKM
CL
CR
CSC
CT
DKM
DR
ELC
EPC
F
FBW
FCF
FHP
FKW
FS
FUM
FWF
"GCH
*GHH
*GM
GSM
PERKIN-ELMER
175
GW
GZF
HB
HBB
HF1
HF2
"HHJ
HJG
HKM
HKN
HS
HW
HVB
HWV
IIK
IKI
JB
JHB
K
KBA
KBM
KD
KGW
KM
KI2
KL1
>>>>>>
S. W. Gaarenstroom and N. Winograd. J. Chem. Phys. 67, 3500 (1977)
P. A. Grutsch, M.V. Zeller, and T. P. Fehlner, Inorg, Chem. 12, 1432
KL2
(1973)
W. B. Hughes, and B. A. Baldwin, Inorg. Chem. 13, 1531 (1974)
J. Hedman, Y. Baer, A. Berndtsson, M. Klasson, G. Leonhardt, R.
Nilsson, and C. Nordling, J. Elect. Spectros. 1, 101 (1972)
R. Hoogewigs, L. Fiermans, and J. Vennik, J. Elect. Spectros. 11, 171
KNP
(1977)
R. Hoogewijs, L. Fiermans, and J. Vennik, J. Microsc. & Spectros.
Electron. 1, 109 (1976)
D. N. Hendrickson, J. M. Hollander, and W. I. Jolly, Inorg. Chem. 9,
612 (1970)
KOW
KPM
KSP
KW
KWD
LAK
LB
LBH
LFS
LHJ
LK
LKM
LMK
LPY
LR
MC
MD
MEC
MKL
ML
MMP
MMR
MRC
*MSA
MSC
MSV
*MTH
176
PHYSICAL ELECTRONICS
(1977)
G. J. Leigh and W. Bremser, J. Chem. Soc. (Dalton) 1972 1217
G. Leonhardt, A. Berndtsson, J. Hedman, M. Klasson, R. Nilsson, & C.
Nordling, Phys. Stat. Sol. 60, 241 (1973)
R. Larsson, B. Folkesson, and G. Schbn, Chem. Scr. 3, 88 (1973)
B. J. Lindberg, K. Hamrin, G. Johansson, U. Gelius, A. Fahlmann, C.
Nordling, and K. Siegbahn, Phys. Scr. 1, 277 (1970)
L. Lavielle and H. Kessler, J. Elect. Spectros. 8, 95 (1976)
L. Ley, S. P. Kowalczyk, F. R. McFeely, R. A. Pollak, and D. A. Shirley,
Phys. Rev. B8, 2392(1973)
L. Ley, F. R. McFeely, S. P. Kowalczyk, J. G. Jenkin, and D. A. Shirley,
Phys. Rev. B11, 600 (1975)
I. Lindau, P. Pianetta, K. Y. Yu, and W. E. Spicer, Phys. Rev. B13. 492
(1976)
T. H. Lee and J. W. Rabalais, J. Elect. Spectros. VI, 123 (1977)
N. S. Mclntyre and M. G. Cook, Anal. Chem. 47, 2210 (1975)
J.-M. Mariot and G. Dufour, Chem. Phys. Lett. 50, 219 (1977)
G. Mavel, J. Escard, P. Costa, and J. Castaing, Surf. Sci 35, 109 (1973)
F. R. McFeely, S. P. Kowalczyk, L. Ley, R. A. Pollak, and D. A. Shirley,
Phys. Rev. B7, 5228 (1973)
C. E. Mixan and J. B. Lambert, J. Org. Chem. 38, 1351 (1973)
G. Maccagnani, A. Mangini, and S. Pignataro, Tetrahedron Lett. 36,
3853 (1972)
R. Mason, D. M. P. Mingos, G. Rucci, and J. A. Connor, J. Chem. Soc.
(Dalton) 1972 1730
N. S. Mclntyre, T. E. Rummery, M. G. Cook, and D. Owen, J.
Electrochem. Soc. 123, 1165 (1976)
W. E. Morgan. W. J, Stec, R. G. Albridge, and J. R. Van Wazer, Inorg.
Chem. 10, 926 (1971)
G. E. McGuire, G. K. Schweitzer, and T. A. Carlson, Inorg. Chem. 12,
2451 (1973)
W. E. Morgan, W. J. Stec, and J. R. Van Wazer, Inorg. Chem. 12, 953
(1973)
.
J
<<<<<<<
MV
MVS
MW
MWI
MWJ
MWM
"MYG
MZ
*N
NAB
NB
NBA
*NBK
NBM
NGD
NH1
NH2
NKB
NKT
*NMS
NSB
NSC
"NSK
NSL
"NSM
NZM
OH
OHI
OW
I f
< <
< <
i 1
1 1 1 t
<
OYK
T. Ohta, M. Yamada, and H. Kuroda, Bull. Chem: Soc. Japan, 47, 1158
PCL
(1974)
PFD
*PHH
PJH
PLB
PMD
PNS
*R
RBO
RH1
RH2
RR
RWJ
S1
S2
S3
S4
SA
SDI
SF
SFS
SGC
SGR
*SMA
SMB
SNF
(1973)
M. Pelavin. D. N. Hendrickson. J. M. Hollander, and W. L. Jolly, J.
Phys. Chem. 74, 1116 (1970)
A. Platau, L. I. Johansson, A. L. Hagstrom, S. E. Karlsson, and S. B.
M. Hagstrom, Surf. Sci. 63, 153 (1977)
S. Pignataro, L. Lunazzi, C. A. Boicelli, R. DiMarino, A. Ricci, A.
Mangini, R. Danieli, and D. Emilia, Tetrahedron Letters 52, 5341 (1972)
J. J. Pireaux, N. Martensson, R. Didriksson, K. Siegbahn, J. Riga, and
J. Verbist, Chem. Phys. Lett. 46, 215 (1977)
O. M. Petrukhin, V. I. Nefedov, Ya. V. Salyn, and V. N. Shevchenko, Zh
Neorg. Khim. 19, 1418(1974)
W. M. Riggs, Anal. Chem. 44, 830 (1972)
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L. Ramqvist, K. Hamrin, G. Johansson, A. Fahlmann, and C. Nordling,
J. Phys. Chem. Solids 30, 1835 (1969)
L. Ramqvist, K. Hamrin, G. Johansson, U. Gelius, and C. Nordling, J.
Phys. Chem. Solids 31, 2669 (1970)
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State Physics 8, 1301 (1975)
G. Schon, J. Elect. Spectros. 2, 75 (1973)
G. Schon, Acta Chem. Scand. 27, 2623 (1973)
G. Schon, Surf. Sci. 35, 96 (1973)
S. Sommer, Amer. Mineralogist 60, 483 (1975)
G. A. Sawatzky and E. Antonides, J. de Physique Colloque C4 Suppl.
37 C4-117
J. Sharma, D. S. Downs, Z. Iqbal, and F. J. Owens, J. Chem. Phys. 67,
3045 (1977)
H. Schultheiss, and E. Fluck, J. Inorg. Nucl. Chem. 37, 2109 (1975)
R. B. Shalvoy, G. B. Fisher, and P. J. Stiles, Phys. Rev. B15, 1680
(1977)
W. E. Swartz, R. C. Gray, J. C. Carver, R. C. Taylor, and D. M.
Hercules, Spectrochimica Acta 30A, 1561 (1974)
J. Sharma, T. Gora, J. D. Rimstidt, and R. Staley, Chem. Phys. Lett. 15,
233 (1972)
W. J. Stec, W. E. Morgan, R. G. Albridge, and J. R. Van Wazer, Inorg.
Chem. 10, 926 (1971)
S. Svensson, N. Martensson, E. Basilier, P. A. Mamqvist, U.
Gelius,and K. Siegbahn, J. Elect. Spectros. 9, 51 (1976)
PERKIN-ELMER
177
>>))>>>
SPB
SRH
STA
*STH
T
*TRL
TT
V
VLD
VRP
VWV
178
PHYSICAL ELECTRONICS
W1
W2
W3
WHP
WM
>>>>>>>>>>>
C. D. Wagner, Shell Development Company unpublished data.
C. D. Wagner, J. Chem. Soc. Far. Disc. 60, 306 (1975)
C. D. Wagner, Chapter 7, Handbook of X-Ray and Ultra-Violet
Photoelectron Spectroscopy, D. Briggs, editor, Heyden & Sons,
London, 1977
R. E. Watson, J. Hudis, and M. Perlman, Phys. Rev. B4, 4139 (1971)
A. Westerhof and H. J. deL. Meijer, J. Organometal. Chem. 1_44, 61
(1978)
WSP
*YN1
YN2
ZH
((((((
i f f f
(<(<<(<<<<<(<<
III. appendix
<<<<<<<<<<<<<<<<<<<<< <<<<<<<<<
The tables presented in this section of the Hand
book greatly facilitate the interpretation of ESCA
data. Table 5, a compilation of relative elemental
sensitivity factors for the various elements based
on peak areas, will assist in data quantification. A
brief description is included with the table. Tables
1 through 4. compilations of photoelectron and
Auger line energies, are essential to the inter
pretation of the ESCA spectrum itself.
The first two tables are comprehensive listings of
line positions on a binding energy scale for all of
the lines of the various elements that can be
generated by MgKo and AlKa photons. All of the
core photoelectron lines with a binding energy
greater than 10 eV plus most of the Auger lines
with the intensity and sharpness to be observable
are included. (Additional small Auger lines,
displayed in differentiated form, can be found in
the Handbook of Auger Electron Spectroscopy,
also published by Physical Electronics.
The energies of the strongest photoelectron lines
in Tables 1 and 2 indicate the center of the range
of energies exhibited by the various chemical
states of each element, with certain exceptions:
1) the elemental state was not included in the
range for alkali and alkaline earth metals, 2) the
oxygenated halogen anions were not included in
the range for the halogens, and 3) the data for the
rare gases are for implanted rare gas ions in
metals. The reason for 1) and 2) is that the values
otherwise shown would be between extremes and
would be characteristic of no chemical state at
all. With these exceptions, the ranges shown en
compass data on all chemical forms. These data
are derived from the literature and from the ex
perience of the authors.
HDprrDK'lM-cri
* * c=m
1Q1
>>>>>>>>
>>>)>>>>> t
Atomic
Range
No.
(eV)
Photoelectron Lines
2s
1s
2pt
2p3
3pt
3s
3p3
3d3
3d 5
4p>
Auger Lines
Range
(eV)
4p3
KL,L,
KL,L
KLjjLjj
LjMM45
L3Mj3M4j
56
113
191
287
a
12
9
4
6
*
0
2
2
12
402
531
686
23
30
063
41
1072
'
119
153
491
332
51
l_,
1031
102T
133
.191 .134
779
645
31
64
901
6
.
8
0
10
14
14
LjM23M" LaMnM'
8
270
0
1
319
166
201
243
229
11
378 "296
"2
.U.6
439 350
J. 501 _407
565 464
630
523
6
6
698
-c:-r,T "770
V-
847
927
1009
1Q9S
1196
~2"
4;-
'
458
62
515
577
586
'
'652 641
723
710
69
77
796
781
873
95.4"
855
1045
'83
40
46
49
1022
45
43
"
10
.128
124
148
232
256
169
189
.143. .45
287
216
-!
"v-ifT
,322 247
>
358
- -395
280
313
431
345
163
182
"
*"CTf \T ' !
""715
-. 604-
659
,-x
548
597
542
541
476
486
479
408
429
368
422
361
297.
343
275
205
;1~,305
Vl-*
57
69
70
89
88
111; 110'
269 135' 133'
301 .160: 158; 45j&%;jj;V25
331 '183 181 51 :tT .29
208
238
.Vv*
&
/OCZ-i
are the most intense and are the most suitable lor use ol line energies in identifying chemical states.
e) Includes LVV when M levels are not in core, and MVV when N levels are not in core.
f) No simple 4p1/2 line exists for this group of elements.
g) The 4d doublet for these elements is complex and is variable with chemical state because of multiple! splitting and multielectron processes.
182
PHYSICAL ELECTRONICS
&:?
ssyvisite.
d) Designation is oversimplified.
620
553
7
5
;; 10
32
58
. . 766
"7"
"20
207
7"1 .
.-,184
-J
10
,56
55
103 "63 . 61 ,
69
112
67
124
79
77
140
92
89
160" "108 "105
"1144 1117
v
.:_3137
93
934
LjM0Mi5" l2m4Sm<5
17
25
44
.402 ..53 .
17
17
22
33
165
199
241
293
347
LjM23Ms
-J-
: jt
483
410
396
""
-'"*
329
257 -T
184
.... 1fig __
337
265
113
468
393
317
242
"".""162
.82
...
.
... J....,
< <
Element
"
<<<<<<
Photoelectron Lines2'
No.
Range
(eV)
3s
3pt
3p,
3d,
3d,
470
379
364
209
206
413
396
425
463
498
534
573
618
666
233
257
230
65
253
282
309
337
368
405
445
68
77
83
Atomic
Nb
41
Mo
42
43
Tc
Flu
44
Rb
45
46
47
Cd
48
508
544
587
629
673
718
772
In
Sn
Sb
Te
49
50
828
Pd
Ag
I
Xe
Cs
. "Ba
.'...Ce
Pr
Nd
Pm
ii.Gd
Tb
445
485
522
561
604
652
286
314
.342
374
412
884
704
757
51
52
53
54
946
814
1009
873
-768
822
6
4
1071
930
874
1144
2
2
936
997
1062
1126
685
55
997
1064
1137
1184
900
950
453
715
494
539
585
630
738
795
851
1001
..-r'
63
64
1060
486
530
575
1186
Dy
66
67
'
-,
68
rwTm
..
69
71
Hf
72
73
74
75
Ta
pw
A Re
'
"70 "
Lu
VI
-V*'
-3--/
.
"
'Os :
..76...
Ir
77
r"6
6
451
470
594
628
657
.3_y".
5pi
5d,
5pi
6s
5ds
6p,
Range
(eV)
6p,
49"
540
91"
105"
114"
123"
141"
158
179
195
207
378
7 392
'
412
26
35
14
52
65
77
92
104
112
25
34
43
50
63
75
90
101
.108
,.
..
114>
227
120)
38
242
250
261
270
284
293
306
320 ~
129
38
132
136
41
34
333'-'.
342
359
382
403
425
449
141
150
154
161
169
180
... - - ..36
..
194] 1851
|
207
224
42
'
10
.775
1 197
55
58
64
748
724
24
'73721
r"
Pt
Au
Hg
Tl
,.Pb
Bi
Th
U
"T/Np
Pu
"TT'7'Am
Cm
Bk
CI
78
79
*
80
81
82
83
3
"
"2
2
3
4
90
92
93
94
'"*95 "
96
97
98
"*"*
"
"
313
333
643
497
521
547
681
577
721
608
645
379
406
435
692
726
763
579
610
803
845
893
942
762
307
1168
354
297
316
336
359
385
413
443
65
76
89
62
73
85
104" 100
122 118
143 138
77*
: :t;
.
"
p.'.'i-'r
"
vi..
'
..
"
. -w.
28
481
440
.2
.
-
105
110
25
".33
362
.V-
.v \ir.:+
27
34
37
45
30
37
-C''
65
69
75
'V:WM';W5
x-\
206
101
850
216
105
883 832
919
958
865
901
994 933
439
463
487
514
541
427
449
473
498
523
351
n9o45o45 n67o45v
1192
1184
54
57
1121
802
i
1
53
1086
681
*-*
226
'84 '
137 100
148 107
467
164 159 161 120
714 677 344 335 290 226
781 739 391 380 325 262
816 771 414 402
968
1046
"
402
26
20
.86 .,60."48
127
"
555
77.'." 7-!*
71
77 ~ "47 7*37
81 .'44 -,'33
98
657
519
23
22
20
. . . ...
.....
.. _
20
684
'
...!
632
594
N;04S045
4
846
819
794
765
737
711
598
17
19
213
241 229
25
27
257
"'34
245
"36
491
277 263 45 43
521
549 ..,.475 .. .294 279 55. J52
437
464
897
872
"671
17
18
"*. 61
. 7 '?-
928
903
889
853
827
803
63
51
954
24
23
34
37
38
218
1025
1002
979
5
7
7
14
16
19
'
M4N4SN4S0>
1056
1C33
1008
981
11
19
79"
'
Auger Lines
M45N23V M5N,5N<se'
1068
;0t/
58''
68''
""362
1088
45')
88
97
109
123
137
155
171
483
507
537
566
">
""
5s
4f f
39
186
1034
45
4dn 4d5
35
38
59
209
230
170
192
254
274 210
290 222
305 237
318 248
337 264
349 ""283
366 '289
380 '.301
398 317
412 329
345
431
1083
1166 1136
4p,
4p i
619
1110
4s
672
724
780
834
882
930
980
65
Ho
/>Yb
61
62
*7-'-'Sm
-77-Er
56
57
58
59
60
La
I( ( { ( ( If
I
76
15
84
94
22
29
1169
13
19
94
87
104
96
124
1159
1151
1162
1155
26
179
197
246
1173
1176
65
43
26
46
29
..
"
'
18
19
18
29
18
31
31 "18
18
32
34
18
19
35
1100
"1064
1005
970
>>>>>>>>>>>)>>>>>)>>>>>>>>>)>>
Table 2. Line
Element
Atomic
Photooloctron Linos
Rango
No.
3s
3pi
3p}
3d
Auger Lines
Range
4P.
<Pj
(eV)
KLiLt
12
10
8
1012
KLi Li3
KLLCI
Li
Be
..
6
7
8
N
O
F
Ne
Na
Mg
Al
Si
9
10
11
12
878
. 997
859
701
536
724
565
384
"i
350
13
,1
14
... P
15
LjMj.M,,"
L2M33M,.
3p
'
16
17
18
19
1336
1304
1270
1238
"
20
1197
--21
--8
23
22
" ',6
:L;.7
Si
7
5
7
"T77
1250
10
A. 11
li.33
34
_ ......
...
1055
1000
948 * V?
775
712
655
781
719
662
'601
lp
21
";if "903
830..
.837
.....
1125
1072
1017
962
1106
.... 6~
24
27
1153
10
725*.v-26 ?
-'
-.J268
'.--1236
:rii94
L:M,sM15
715
649
585
-L,:>-517 i:
. . -i." *594
:
.'.
"
.538 i;
ti V.
530
>r448
376
300
35
36
?'37
"
'
358
238 7111
301 -.160
331 .183
i40
Irt4 A.tf.Z-j:-
y&Vrr.
t-
a) Lines enclosed in boxes are the most intense and are the most suitable (or use of line energies in identifying chemical slates.
b) For brevity, 2p3 equals 2q2' 3cI5 equals Od. etc.
e) Includes LVV when M levels are not in core, and MVV when N levels are not in core.
I) No simple 4p1/2 line exists for this group of elements.
g) The 4d doublet for these elements is complex and is variable with chemical state because of multiplet splitting and multielectron processes.
h) Often observable, induced by bremsstrahlung.
184
PHYSICAL ELECTRONICS
((
1 t
<
Element
Atomic
No.
Range
(eV)
3s
3p,
3pj
3d,
3d,
41
379
364
209
413
445
485
522
396
425
233
257
463
286
314
206
230
253
282
309
342
374
412
453
494
337
368
405
445
486
539
585
630
685
738
530
575
619
672
724
795
780
851
900
950
1299 1001
1060
1110
1166
1219
834
42
43
470
508
544
Ru
Rh
44
587
. Pd
46
47
48
629
673
Nb
Mo
Tc
45
Ag
Cd
In
; Sn
. Sb
Te
'
'
Ba
La
Ce
2
3
3
4
49
50
.5
6
"
59
60
Pm
61
'v Eu
Gd
62
63
64
65
V Sm
..
i_
Tb
Dy
"
"
69
70
71
72
73
Lu
Hf
Ta
.'
>." '
. r' "V
"i*
>. /*'-
5p,
5p,
5d,
5d,
6s
(eV)
6p3
6Pi
19
26
25
35
34
43
171
1141
186
209
230
123!
52
50
141
65
77
63
170
192
210
222
237
248
264
305
158
179
92
104
112
366
380
398
412
431
329
345
378 -333
483
507
537
566
392 ,>342
359
412
382
437
403
464
362
75
90
1200>
38
'
136
141
161
169
,194
17
.18
'41
-*20
-24
21
28
*26
20
"25
'
61
1 J21
54 ~ *32
55 _.33
58
34
37
64
45
71
77 -'A7
1161
917
890
77
Pt
Au
78
S*V-TI
~vj;Pb
Th
U
92
Bi
-* P"
94
95
96
97
98
'A.'*
Jj _
"
"
r';?yVv
7SS.
'
. -
* * *7
579
497
313 297
65
333 316
521
76
726 610
354 336 89
763 643
547
803 681 T.7577 -* "379 "359 7.104
'
406 385 122
845 _72i
608
435 413 .143
893 v-762 S"645
942
681 "*467 443 164
807
714 677 344
968
1330 1168
781 739 391
1274 1046
-816
771 "41*4*
1327 1086
;.1121850
802 439
'883 832 "463
919 "865' "487
958 901 514
994 933 541
*>* T
.3 *"*'
"*93
TC27'
2
81
82
83
90
Cm
Bk
Cf
"80':"
692
79
...
.f'r.Pu
XlV-Am
62
73
85
98
65
105
69
110
75
' .v..
26
A'
"7* -Tp-
--T-
'
-WV.
30
37
37--T
...;
"
*V 1
427
473'
498
523
19
26
87
96
.
Jvj.
43
":0
26
29
46
120
34
35
124
375
-yrrp
- 325
273
235
155
195
142
f
'
100
T 58 *!
93
.*
>
" ""
- ~v
-X
-p'iTi*rv.-
"j
31 >;>18
""32
a-1409
18
19
18
18
.77;.'
'
'
j-
N bO*sO5
;i'
f -
N9;045V
1425
1417
--
.1395
'1388
:>7.18 T
j,..; _J
L-
31 718 V
*c
7.
*"7;7.
-yjrrr-~*29
246
265
T:, ".;*
351
426
490
454
VT *"
7 j
' ."
u'iilwj
p-j'.V
7'7'' ' :-
r -~
635
595
568
527
53
54
57
449
752
'402
i
**
714
673
n7o45o *5
Ir
970
944
* r-*
27
1079
1052
1027
998
788
1130
1105
865
827
'26 ''vU.'
1136
1112
1086
1060
1036
1008
981
957
931
904
. .
20
23
22
36
42
63
51
180
185
,77-....
207 [ 197
224 213
19
17
241 229
27
25
."594 "491 *'.'7425 :257 "245 "736" ~34
628 .521 .449 '277 - 263 .'45' '43
657 --549 - -475 :;294 279 .55 752
1235
1212
34
150
154
38
129
"132
293
306
.320
.451
470
1258
5
7
7
10
6
14
16
19
24
23
34
37
38
101
108
1148'
227
242
"283 **250
:289 261
270
301
284
317
318
337
349
44
195
207
218
4
4
79')
1289
1266
1241
1214
1187
11
Auger Linos
M<sN23V M,NsN
1301
1280
68"
91n
105"
254
274
290
1321
58 1
<
1 1
Range
5s
451
49
541
123
137
155
Photoelectron Lines
4d r 4ds
4'j 41,
39
68
77
83
88
97
109
..
jiJ.
65
1136
4pi
35
38
59
882
930
980
1034
1083
--
4Pi
4s
1186
1279 1244
1334 1295
75
,._76
'
TT6 T
74
'Os
JL
68
2Yb..
i> - :Re
. -Y :
66
67
Ho
gf Er * 'V
Tm
534
573
618
666
715
768
822
930
874
936
1144 997
997
1216 1064
1292 1137 1062
1207 1126
1271 1184
1337 1242
"'2
498
561
604
652
704
757
814
873
718
772
828
884
946
1009
1071
58
Pr
Nd
ti
51
52
53
54
55
56
57
I
Xe
Cs
<<<
i i i ( 1 1
1 t
1 ({ i t
{'Xj
1406
" '
*T
... r 1384
1392
1333
*
v7
-7*.
""
1238
1297
"
1402
1203
*
'
;y-'tyi
-/
> 1
19
PERKIN-ELMER
185
>>>
17
23
25
30
31
34
40
41
43
44
45
48
50
51
52
55
56
57
61
62
63
64
67
69
73
74
ill
if
ji.
f!
Hf 4f7
(2)
0 2s
Ta4f7
F 2s
Ge 3d5
W4f7
(2)
(1)
(2)
Cr3pa
Mn3p3
I4d5
(2)
(1)
(1)
(1)
(2)
Mg 2p
Os4f7
Fe3p3
Li 1s
(3)
(1)
Ir 4f7
(1)
(2)
(3)
Xe4d5
(2)
Se3ds
Co3p3
Na 2s
Ni3p3
Br3d5
Pt 4f 7
Al 2p
Si 2p3
Ga3p3
Ce4d5
Rb3ds
(1)
(3)
(4)
(1)
Be 1s
Ge (A)
114 Pr 4d
V 3p
Ne 2s
Re4f7
As3ds
102
105
108
110
113
113
(2)
(1)
(3)
75 Cs4d5
77 Cu3p3
(2)
(2)
85 Au4f7
87 Zn3p3
88 Kr3d5
90 Ba4d5
90 Mg 2s
100 Hg 4f7
101 La4d5
(4)
(3)
(1)
(2)
(4)
(3)
118 Tl 4f7
119 Al 2s
120 Nd 4d
124 Ge 3p3
132 Sm 4d
133 P2p3
133 Sr3ds
136 Eu 4d
138 Pb4f7
143 As3p3
150 Tb 4d
153 Si 2s
154 Dy 4d
158 Y3d5
159 Bi 4f7
161 Ho 4d
163 Se3p3
165 S2p3
169 Er 4d
180 Tm 4d
181 Zr3d5
182 Br3p3
185 Yb4d5
189 Ga (A)
191
191
197
199
(4)
(4)
(1)
(2)
(5)
(5)
(2)
(5)
(6)
(1)
(2)
(7)
(9)
B 1s
P 2s
Lu 4d5
CI 2p3
(3)
206 Nb3ds
(8)
208 Kr3p3
(11)
213 Hf 4d5
229 S 2s
(12)
229 Ta4ds
(3)
230 Mo3d5
(9)
Rb3p3
.
238
(2)
241 Ar2p3
(12)
245 W4ds
263 Re4d5 (14)
264 Na (A)
265 Zn (A)
(11)
269 Sr3p3
270 CI 2s
279 Os4d5 (15)
(4)
282 Ru3d5
284 Tb 4p3 (33)
287 C 1s
293 Dy 4p3 (36)
(3)
293 K2p3
(16)
297 Ir 4ds
(12)
301 Y 3p3
306 Ho4p3 (39)
(5)
309 Rh3d5
(17)
316 Pt4d5
319 Ar 2s
320 Er4p3
331 Zr3p3
333 Tm 4p3
335 Th 4f7
336 Au4d5
337
Pd3d5
(42)
(14)
(45)
(9)
(18)
(5)
337 Cu (A)
(10)
(2)
342 Yb 4p3
347 Ca2p3
(50)
(3)
359 Lu 4p3
359 Hg 4d5
362' Gd (A)
364 Nb3p3
368 Ag3ds
378 K 2s
380 U 4f7
385 Tl 4d5
396 Mo3p3
402 N 1s
402 Eu (A)
402 Sc2p3
405 Cd 3d5
410 Ni (A)
413 Pb4d5
435 Ne (A)
439 Ca 2s
440 Sm (A)
443 Bi4d5
445 In3ds
458 Ti 2p3
463 Ru3p3
483 Co (A)
486 Sn3d5
498 Rh3p3
501 Sc 2s
515 V 2p3
519 Nd (A)
530 Sb3ds
531 O 1s
534 Pd3p3
553 Fe (A)
555 Pr (A)
565 Ti 2s
573 Ag 3p3
(53)
(20)
(15)
(6)
(11)
(21)
(17)
(5)
(7)
(22)
(24)
(8)
(6)
(22)
(8)
(24)
(8)
(9)
(27)
(31)
575 Te3ds
577 Cr2p3
594 Ce (A)
599 F (A)
618 Cd3p3
619 1 3d5
632 La (A)
641 Mn2p3
657 Ba (A)
666 !n3p3
670 Mn (A)
672 Xe3ds
677 Th4d5
684 Cs (A)
686 F 1s
710 Fe2p3
711 Xe (A)
715 Sit 3p3
724 Cs3d5
729 Cr (A)
737 1 (A)
(10)
(9)
863
872
875
882
(34)
897 Ag (A)
920 Sc (A)
928 Pd (A)
739 U4d5
743 O (A)
765 Te (A)
(42)
768 Sb3p3
780 Ba3d5
781 Co2p3
784 V (A)
794 Sb (A)
819 Sn (A)
822 Te3p3
834 La3d5
839 Ti (A)
846 In (A)
855 Ni 2p3
(11)
(11)
(38)
(13)
(37)
930
934
954
961
970
980
Ne 1s
Cd (A)
N (A)
Ce3ds
Pr3d5
Cu2p3
Rh (A)
Ca (A)
U (A)
186
PHYSICAL ELECTRONICS
(20)
(20)
Nd3d5
(21)
981
993
1003
1005
1022
1035
1071
1072
1082
1083
1088
Ru (A)
C (A)
K (A)
Th (A)
Zn2p3
Ar (A)
CI (A)
Na 1s
B (A)
(23)
(46)
(15)
(15)
Nb (A)
1103 S (A)
1117 Ga2p3 (27)
1136 Eu3d5 (30)
1155 Bi (A)
(51)
(17)
1162
1169
1176
1184
1186
1192
Pb (A)
Tl (A)
Hg (A)
Au (A)
Gd 3d5 (33)
Pt (A)
(13)
(42)
(14)
Sm3d5 (27)
(18)
An A in parentheses denotes Auger line. Numbers in parentheses are spin doublet separations in electron volts. The sharpest Auger line and the two most intense
photoelectron lines per element are included in the table. For brevity, 2p3 equals 2p3)2, 3d5 equals 3d5/2, etc.
rI
(18)
H f 4f 7
0 2s
(2)
Ta4f7
(2)
F 2s
W4f7
(2)
40 V 3p
41 Ne2s
43
44
45
48
50
52
55
56
57
61
62
Re4f7
As3d5
Cr3p3
Mn3p3
I4ds
Os4f7
Fe3p3
Li 1s
(2)
(1)
(1)
(1)
(2)
(3)
(1)
Ir 4f7
(1)
(2)
(3)
63
Xe4d5
(2)
64
67
69
73
74
75
77
85
87
88
90
90
Na 2s
Ni 3p3
Se3ds
Co3p3
Br3d5
Pt4f7
Al 2p
Cs4d5
Cu3p3
Au4f7
Zn3p3
Kr3d5
Ba4d5
Mg 2s
99 Er (A)
100 Hg 4f7
101 La4d5
102 Si 2p3
105 Ga3pj
108
(2)
(1)
(3)
Ce4d5
(2)
(2)
(4)
(3)
(1)
(2)
(4)
(3)
(1)
(3)
(4)
110
113
114
118
119
120
124
132
133
133
136
138
141
142
150
153
154
158
159
161
163
165
169
180
181
182
184
185
191
191
Rb3d5
(1)
Be 1s
Pr4d
TI4f7
Al 2s
Nd 4d
Ge3p3
Sm 4d
P2pj
Sr3d5
(4)
(4)
(1)
(2)
Eu 4d
Pb4f7
(5)
Gd 4d
Ho (A)
Tb 4d
Si 2s
Dy4d
Y3ds
Bi 4f7
Ho 4d
Se3p3
S2p3
Er 4d
Tm 4d
Zr3d5
Br3p3
Se (A)
Yb4d5
B 1s
P 2s
195 Dy (A)
197 Lu4d5
199 CI 2p3
206 Nb3d5
208 Kr3p3
213 Hf4d5
229 S 2s
(2)
(5)
(6)
(1)
(2)
(7)
(9)
(10)
(2)
(3)
(8)
(9).
229 Ta4d5
230 Mo3d5
223 n;-, T, ,
241
245
263
265
266
269
270
279
282
287
293
297
301
305
306
309
316
319
320
331
333
335
336
337
342
346
347
359
359
364
368
378
380
Ar2p3
W4d5
Re4d5
Tb (A)
As (A)
Sr3p3
CI 2s
Os4d5
Ru3ds
C 1s
K2p3
Ir 4ds
Y3p3
(12)
(3)
V~>/
(2)
(12)
(14)
(11)
(15)
(4)
(3)
(16)
(12)
Mg (A)
Ho4p3 (39)
(5)
Rh3ds
Pt4ds (17)
Ar2s
(42)
Er 4p3
(14)
Zr3p3
Tm 4p3 (45)
(9)
Th4f7
(18)
Au4d5
(5)
Pd 3d5
Yb 4p3 (50)
Ge (A)
(3)
Ca2p3
Lu 4p3 (53)
Hg4d5 (20)
Nb3p3 (15)
(6)
Ag 3d5
K 2s
(11)
U4f7
385 TI4d5
396 Mo?p3
402 N 1s
402 Sc2p3
405
413
422
439
443
445
458
463
486
497
498
498
501
515
530
531
534
565
570
573
Cd3ds
Pb4d5
(21)
i /
(5)
(7)
(22)
Ga (A)
Ca 2s
Bi 4ds
In3d5
Ti 2p3
Ru3p3
Sn3d5
(24)
(8)
(6)
(22)
(8)
Na (A)
Zn (A)
Rh3p3 (24)
Sc 2s
V2p3
Sb3d5
0 1s
Pd3p3
Ti 2s
Cu (A)
Ag3p3
(8)
(9)
(27)
677
686
710
715
716
(37)
Th -d5
F 1s
Fe2p3 (13)
Sn3p3 (42)
Co (A)
1072
1072
1079
1083
1105
724
739
Cs3d5
U4ds
(14)
(42)
752
768
780
731
786
788
822
827
832
834
855
863
865
882
Nd (A)
Sb3p3 (46)
Ba3ds (15)
uo 2p3 (15)
Fe (A)
Pr (A)
(51)
Te3p3
Ce (A)
F (A)
La3d5 (17)
(18)
Ni 2p3
Ne 1s
La (A)
Ce3ds (18)
Ba (A)
Mn (A)
Cs (A)
Pr3d5 (20)
Cu 2p3 (20)
Xe (A)
Cr (A)
I (A)
O (A)
Nd3d5 (21)
Te (A)
1108
1117
1130
1136
890
903
(31)
(10)
(9)
917
930
934
944
962
970
976
575
577
595
618
619
Te3ds
I3ds
635 Eu (A)
(11)
641
643
666
668
672
673
Mn2p3
Ni (A)
In3p3
Ne (A)
(11)
(38)
1017 V (A)
Xe3d5
(13)
1022 Zn2p3
1027 Sb (A)
1052 Sn (A)
Cr2p3
Gd (A)
Cd3p3
Sm (A)
(34)
980
998
(23)
1153
1161
1186
1187
1194
1205
Na 1s
Ti (A)
In (A)
Sm3ds (27)
Cd (A)
N (A)
Ga2p3
Ag (A)
Eu3ds
(27)
(30)
Sc (A)
Pd (A)
Gd3d5
(33)
Rh (A)
Ca (A)
U (A)
1214 Ru (A)
1219 Ge2p3
(31)
1226 C (A)
1230 Th (A)
1236 K (A)
1244
1268
1295
1301
1304
1305
1315
1321
1326
1336
1388
1395
1402
1409
1417
1425
Tb 3d5
Ar (A)
(35)
Dy3d5
(39)
Mo (A)
CI (A)
Mg 1s
B (A)
Nb (A)
As2p3
S (A)
Bi (A)
Pb (A)
TI (A)
Hg (A)
Au (A)
Pt (A)
An A in parentheses denotes Auger line. Numbers in parentheses are spin doublet separations in electron volts. The sharpest Auger line and the two most intense
photoelectron lines per element are included in the table. For brevity, 2p3 equals 2p3,2, 3d5 equals Sd, etc.
PEBKIN-ELMER
187
>>>
>>>>>*>>>>>>)>>>>>
CO u.
ASF
Element
3
4
5
6
7
8
9
10
11
Li
Be
B
C
N
0
F
Ne
Na
Na
Mg
Mg
Al
Si
P
S
CI
Ar
K
Ca
Sc
Ti
V
Cr
Mn
Fe
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Line
1s
1s
1s
1s
1s
1s
1s
1s
1s
1s
1s
2p
2P
2p
2p
2p
2p
2 P3/2
2P3/2
2P3T2
2P3J2
2Par2
2 Pa/2
2 P3/2
ASF
Element
Line
(Area)
.012
27
.039
.088
.205
.38
.63
28
29
30
31
Co
Ni
Cu
Zn
Ga
2pa>
2pal
4.5
5.4
2Pa/2
4.3
5.3
6.9
49
50
51
52
53
54
55
56
57
(Area)
1.00
1.54
32
Ge
2.51
(2.27)
(3.65)
.07
.11
.17
.25
.35
.48
.42
.55
.71
.90
1.1
2Pa;2
1.4
1.7
2.1
2pa)
3.8
2p3/2
2P3/2
2P3/2
2P3T2
2Pa/2
3d
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
As
Se
Br
Kr
Rb
Sr
Y
Zr
Nb
Mo
Tc
Ru
Rh
Pd
Ag
Cd
2P3/2
3d
3d
3d
3d
3d
3d
3d
3d5/2
3d5,2
3d5;2
3d5/2
3d5/2
3d5/2
3d5/2
3d5;2
3d5/2
(5.8)
9.2
(7.2)
.30
(9.1)
.38
.48
.59
.72
.88
1.05
1.25
.87
Elemenl
Element
65
Tba|
66
Dya)
Hoa)
5.5
6.1
67
68
69
70
6.7
71
1.22
72
12.5
1.29
14.0
1.38
15.7
1.48
17.6
1.57
20.3
1.66
23.8
(20.2)
1.76
29.4
(22.6)
1.84
73
74
75
76
77
78
79
80
81
82
83
90
92
3d5/2
3d5/2
3d5/2
Te
I
Xe
3d5,2
2.85
3.2
3.55
4.0
3d5/2
3ds/2
4.4
4.9
Cs
Ba
La
3d5/2
3d5/2
3d5/2
58
Cea)
59
pra>
60
Nda)
61
Pma)
1.00
1.2
62
Sma)
1.35
1.55
1.75
2.0
2.25
2.55
63
Eu
64
Gda)
3d
4d
3d
4d
3d
4d
3d
4d
3d
4d
3d
3d
4d
3d
3d
4d
ASF
(Area)
In
Sn
Sb
4da)
a) Variable and complex pattern makes it usually desirable to measure areas of entire doublet region.
188
Line
Era>
Tma|
Yba)
Lua)
Hf
Ta
W
Re
Os
Ir
Pt
Au
Hg
TI
Pb
Bi
Th
U
Line
(Area)
3d
4d
3d
4d
4d
4d
4d
4d
(26.7)
1.93
(30.0)
2.03
2.12
2.19
2.28
2.36
4d
2.45
1.55
4f
4f
4f
Af 7/2
4f 7/2
tf 7/2
Af7/2
A'f 7/2
Af7/2
4(7/2
4(7/2
4(7/2
4(7/2
4f7/2
1.75
2.0
1.25
1.4
1.55
1.75
1.9
2.1
2.3
2.55
2.8
4.8
5.6
rf\
CD
)
PHYSICAL ELECTRONICS
>
He
Li
Be
13
14
15
16
17
Si
CI
33
34
11
Ma
19
K
37
Rb
55
Cs
87
Fr
12
A!
Mg
20
Ca
38
Sr
56
Ba
88
Ra
21
Sc
39
Y
57
La
22
Ti
V
41
40
Zr
42
72
Ta
Pt
lr
Os
In
81
80
Hg
Au
Sb
Sn
Pb
TI
36
Kr
54
Xe
84
85
Po
Bi
Ar
53
Te
83
82
18
Br
52
51
Me
35
Se
As
50
49
Cd
79
78
Ge
Ga
48
Ag
32
31
Zn
47
Pd
77
30
Cu
46
Rh
76
Re
Mi
45
Ru
75
74
73
Hf
Tc
29
28
Co
44
43
Mo
Mb
Fe
Mn
Cr
27
26
25
24
23
10
86
Rn
At
89
Ac
58
Ce
90
Th
59
Pr
91
Pa
60
Md
92
61
Pm
93
Mp
62
Sm
94
Pu
63
Eu
95
Am
64
Gd
96
Cm
65
Tb
97
Bk
66
Dy
98
Cf
67
Ho
99
Es
68
Er
100
Fm
69
Tm
101
Md
70
Yb
102
Mo
71
Lu
103
Lw
I I >>>)
)>)>>
>>>>>)
ii
.('i
-1:
ril
!
I!'
! I 1
Name
Symbol
Aluminum
Antimony
Argon
Arsenic
Barium
Beryllium
Bismuth
Boron
Bromine
Cadmium
Calcium
Carbon
Cerium
Cesium
Chlorine
Chromium
Cobalt
Copper
Erbium
Fluorine
Gallium
Germanium
Gold
Hafnium
Indium
Iodine
Iridium
Iron
Lanthanum
Lead
Lithium
Magnesium
Manganese
Mercury
Al
Sb
Ar
As
Ba
Be
Bi
B
Br
Cd
Ca
Ml !
190
PHYSICAL ELECTRONICS
Ce
Cs
CI
Cr
Co
Cu
Er
F
Ga
Ge
Au
Hf
In
I
Ir
Fe
La
Pb
Li
Mg
Mn
Hg
Atomic
Number
13
51
18
33
56
4
83
5
35
48
20
6
58
55
17
24
27
29
68
9
31
32
79
72
49
53
77
26
57
82
3
12
25
80
Page
'
, 50
120
60
90
130
34
162
36
94
114
64
38
134
128
58
72
78
82
140
44
86
88
154
142
116
124
150
76
132
160
32
48
74
156
Name
Symbol
Molybdenum
Nickel
Niobium
Nitrogen
Oxygen
Mo
Palladium
Phosphorus
Platinum
Potassium
Rhenium
Rhodium
Ruthenium
Samarium
Scandium
Selenium
Silicon
Silver
Sodium
Strontium
Sulfur
Tantalum
Tellurium
Terbium
Thallium
Thorium
Tin
Titanium
Tungsten
Uranium
Vanadium
Xenon
Yttrium
Atomic
Number
42
28
41
Ni
Nb
N
O
Pd
P
Pt
K
Re
Rh
Ru
Sm
Sc
Se
Si
Ag
Na
Sr
S
Ta
Te
Tb
Tl
Th
Sn
Ti
W
Xe
Y
Zinc
Zn
Zirconium
Zr
7
8
46
15
78
19
75
45
44
62
21
34
14
'
47
11
38
16
73
52
65
81
90
50
22
74
92
23
54
39
30
40
Page
104
80
102
40
42
110
54
152
62
148
108
106
136
66
92
52
112
46
96
56
144
122
138
158
164
118
68
146
166
70
126
98
84
100