Professional Documents
Culture Documents
in
FRANCIS XAVIER ENGINEERING COLLEGE, TIRUNELVELI
Department of Electronics and Communication Engineering
COLLEGE
MISSION
To
provide
education
in
engineering
with excellence
and ethics and
to reach the
unreached.
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COLLEGE VISION
ECE DEPARTMENT
MISSION
1.
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: EC 6201 ELECTRONIC DEVICES
Credits
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: Mr.CHRISTO ANANTH
Class
: I BE ECE ASec
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Course
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Prepared by
Mrs.N.NAVANEETHA VELAMMAL,
HOD/ECE.
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Mr.CHRISTO ANANTH ,
AP/ECE
Approved by
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Department of ECE-FXEC
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Programme Educational Objectives (PEOs)
S. No.
PEOs
Definition of PEOs
To impart knowledge in basic sciences, mathematics, technology, work
ethics and character to excel in the professional career and make
innovative contributions to the society and to acquire knowledge in
electronics and communication engineering.
PEO 1
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PEO 2
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PEO 3
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Department of ECE-FXEC
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Programme Outcomes (POs)
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Individual and Team Work: Function effectively as an individual, and as a member or leader
in diverse teams in multi-disciplinary settings.
Communication: Communicate effectively to the engineering community and the outside world
and also to write effective reports.
Project Management and Finance: Understand engineering and management principles and
apply them to handle projects in multi disciplinary environments.
Life-Long Learning: Recognize the need for life-long learning and apply in the context of
technological change.
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PEO
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Professionalism
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Inculcating
Multi skills
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Programme Outcomes
Engineering Knowledge: Apply knowledge of mathematics, science, engineering fundamentals
and an engineering specialization for building engineering models.
Problem Analysis: Identify and solve engineering problems reaching conclusions using
mathematics and engineering sciences.
Design/Development of Solutions: Design and develop solutions for engineering problems that
meet specified needs.
.Investigations of Complex Problems: Conduct investigations of complex problems including
Acquiring
Knowledge
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Department of ECE-FXEC
S. No.
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Course Objectives
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Course Outcomes
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Professionalism
Acquiring
Knowledge
PEO
Inculcating
Multi skills
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Department of ECE-FXEC
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Program Outcomes
Course Outcomes
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Pre-requisites
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Department of ECE-FXEC
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1. The pre-requisite knowledge required by the Students to study this Course is +2 Physics
FR
2. This course is offered in Second semester of B.E. programme in Electronics and communication
engineering as a professional core subject.
3. This course emphasizes on the basics of electronic devices,
4. This course explains the fundamentals of theory, construction, and operation of Basic electronic
devices.
5. The course can be delivered by the following teaching aids- through lectures (chalk & talk, PPT,
OHP).
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ELECTRONIC DEVICES
LTPC3003
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EC6201
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COURSE SYLLABUS
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UNIT I
SEMICONDUCTOR DIODE
9
PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias
characteristics, Switching Characteristics.
UNIT II
BIPOLAR JUNCTION
9
NPN -PNP -Junctions-Early effect-Current equations Input and Output characteristics of CE, CB
CC-Hybrid - model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi
Emitter Transistor.
UNIT III
FIELD EFFECT TRANSISTORS
9
JFETs Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significanceMOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET.
UNIT IV
SPECIAL SEMICONDUCTOR DEVICES
9
Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode
Tunnel diode- Gallium Arsenide device, LASER diode, LDR.
UNIT V
POWER DEVICES AND DISPLAY DEVICES
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UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor,
Opto Coupler, Solar cell, CCD.
COURSE OUTCOMES:
At the end of the course, the student should be able to:
1. Explain the theory, construction, and operation of basic electronic devices.
2. Use the basic electronic devices
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Department of ECE-FXEC
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TEXT BOOKS
1. Donald A Neaman, Semiconductor Physics and Devices, Third Edition, Tata Mc GrawHill
Inc. 2007.
REFERENCES:
1. Yang, Fundamentals of Semiconductor devices, McGraw Hill International Edition, 1978.
2. Robert Boylestad and Louis Nashelsky, Electron Devices and Circuit Theory Pearson Prentice
Hall, 10th edition,July 2008.
Unit No
1
Topics to be Covered
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No
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Lect
T1 /T2
PN junction diode
T1 /T2
Current Equations
T1 /T2
T1 /T2
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T1 /T2
9,10
Switching Characteristics
T1 /T2
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PN junction
VI
3,4
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5,6
No
238 /
115
268 /
117
277 /
124
278 /
130
247 /
127
270 /
140
12
NPN,PNP
13
NPN,PNP Junctions
T2 /
220 /
R1
142
T2 /
221 /
R1
143
T1/ R1
388 /
397,
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Introduction
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BIPOLAR JUNCTION
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14,15
No
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Week
Introduction
Page
SEMICONDUCTOR DIODE
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Text
146
16,17
18
T2 /
231 /
R2
131
T2 /
296 /
T1
418
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Department of ECE-FXEC
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19
20
21
298 /
T1
414
T1 /
416 /
R2
245
R1
225
T1 /
571 /
T2
385
T1 /
577 /
R2
365
T1 /
596 /
T2
386
T2 /
388 /
R2
366
T1 /
483 /
T2
396
T1 /
524 /
R1
312
T1 /
526 /
R1
340
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T2 /
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Introduction
23
JFETs
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VI
25
Current Equations
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MOSFET-Characteristics
28
Threshold Voltage
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26
D-MOSFET,E-MOSFET
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Current Equation
32
33
34
Introduction
35
380 ,
385 /
351
T1 /
486 /
R1
353
T1 /R1
R3
502 /
355
455
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31
R2 /
T1 /
350 /
R1
371
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Department of ECE-FXEC
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MESFET
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38
Zener diode
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39
42
LASER diode
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373
T1 /
326 /
R2
804
90 / 36
R2 /
808 /
R1
376
R2 /
811 /
R1
378
R3
470
T1 /
653 /
R1
384
R1
386
R2 /
850 /
R1
390
R2 /
833 /
R1
395
R1 /
398 /
R3
483
R1 /
402 /
R3
486
T1 /
668 /
R3
490
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UJT
GI
44
LDR
VI
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R1
R2
Tunnel diode
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575 /
T2 /
Varactor diode
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40
T1 /
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Diac
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Triac
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49,50
DMOS, VMOS
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LED,LCD
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Solar Cell
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CCD
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R2 /
394 /
R1
404
R2 /
40 , 822
R1
/ 407
R2 /
859 /
T1
641
R2 /
829 /
R1
412
R3
493
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Total Hours: 54
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Department of ECE-FXEC
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Assessment Pattern
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Item
Internal Test 1
Internal Test 2
Internal Test 3
Assignment
Total
Weightage (%)
25
25
25
25
100
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Department of ECE-FXEC
www.francisxavier.ac.in
FR
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NPN,PNP
NPN,PNP
Junctions
Early effect
Current
Equations
Ebers Moll
Model
Pinch off
voltage
POWER DEVICES
AND DISPLAY
DEVICES
UJT
Threshold
Voltage
Varactor
diode
MOSFETCharacteristics
LED,LCD
LASER
diode
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Department of ECE-FXEC
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SCR
DMOS,
VMOS
Zener diode
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Switching
Characteristics
Input and
Output
characteristics
Schottky
Barrier
Diode
MESFET
Current
Equations
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characteris
tics
SPECIAL
SEMICONDUCTOR
DEVICES
JFETs
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forward and
reverse bias
FIELD EFFECT
TRANSISTORS
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Diffusion
and drift
current
PN junction
diode
BIPOLAR
JUNCTION
EN
PN junction
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SEMICONDUCTOR
DIODE
ELECTRONIC
DEVICES