InSb photoconductive detectors

P6606 series

Thermoelectrically cooled detectors capable

of long-term measurements

Features

Applications

Thermoelectric cooling ensures high speed and high

sensitivity up to 6.5 m.

Environment measurements (gas analysis, etc.)

Photoconductive element that changes electrical

resistance by input of IR radiation
Easy-to-use detector/preamp modules are also available.

Radiation thermometers (5 m band)

FTIR
IR laser detection

Related products (sold separately)

Heatsink for one/two-stage TE-cooled type

A3179-01

Heatsink for three-stage TE-cooled type

A3179-04

Temperature controller

C1103-05 (-75 to -25 C)

C1103-07 (-30 to +20 C)

Preamp

C5185-02

Infrared detector module with preamp

P4631-03 (P6606-310)

Specifications / Absolute maximum ratings

Type no.

P6606-110
P6606-210
P6606-305
P6606-310
P6606-320

Dimensional
outline/
Package
Window
material*1
/S

TO-8

/S

TO-3

Absolute maximum ratings

Photosensitive
Operating
Thermistor TE-cooler
Storage
Incideut
Allowable
area
temperature temperature
power
power
Cooling
light level
current
Topr
dissipation dissipation
Tstg
(mm)
(mW)
(mW)
(A)
(mA)
(C)
(C)
One-stage TE-cooled
400
1.5
11
40
Two-stage TE-cooled
100
1.0
0.2
0.5 0.5
20
-40 to +60 -55 to +60
Three-stage
11
10
1.0
40
TE-cooled
22
60

*1: Window material S=Sapphire glass

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.

Electrical and optical characteristics (Typ. unless otherwise noted)

Type no.

Measurement
Peak
Photocondition
Cutoff
sensitivity
sensitivity*2
wavelength
Element
S
wavelength
c
temperature
p
=p
T

D*
(500, 1200, 1)

D*
(p, 1200, 1)

Rise time
Thermistor
Dark
tr
resistance resistance
0 to 63%
Tc=25 C
Rd

Min.
Typ.
(cm Hz1/2/W) (cm Hz1/2/W) (cm Hz1/2/W)
(s)
()
(k)
P6606-110
7 107
2 108
1 109
20
P6606-210
1.5 108
5 108
2.5 109
25
5.5
P6606-305
1 109
2 109
1 1010
0.4
150
1.3
P6606-310
-60
6.3
1 109
2 109
1 1010
80
P6606-320
5 108
1 109
5 109
80
*2: Photosensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.
(C)
-10
-30

(m)

(m)
6.7
6.5

(V/W)
10
50
2500
650
150

www.hamamatsu.com

InSb photoconductive detectors

Spectral response

D* vs. element temperature (P6606-310)

(Typ.)

1011

P6606-310 (T=-60 C)
10

10

(Typ.)

1011

D* (, 1200, 1) (cm Hz 2 /W)

D* (p, 1200, 1) (cm Hz1/2/W)

P6606 series

P6606-210 (T=-30 C)

109

P6606-110 (T=-10 C)
8

10

10

10

10

109

108
-60

Wavelength (m)

-50

-40

-30

-20

-10

Element temperature (C)

KIRDB0166EC

KIRDB0167EA

S/N vs. bias current (P6606-310)

S/N vs. chopping frequency

(Typ. Ta=25 C)

160

103

140

(Typ. Ta=25 C)
Light source: 500 K
Incident light level: 2.64 W/cm2
Bias current: oprimum value

S/N

S (signal)

S/N (Relative value)

Relative value

120

D*

100
80
60
40

S (signal)
2

10

N (noise)

N (noise)
20
0
0

10

15

20

25

30

Bias current (mA)

101
1
10

10

10

10

Chopping frequency (Hz)

KIRDB0460EA

Bias current must be in the range where D* is constant.

KIRDB0461EA

Increasing the chopping frequency reduces the 1/f

noise and results in an S/N improvement. The S/N can
also be improved by narrowing the noise bandwidth
using a lock-in amplifier.

InSb photoconductive detectors

Linearity

P6606 series

Dark resistance, rise time vs. element temperature

(Typ. Ta=25 C, fully illuminated)

104

(Typ. Ta=25 C)

103

103
Rise time
10

Relative value

Relative value

101

100

102

-1

10

Dependent on NEP

-2

10

-7

10

-6

-5

10

10

-4

10

-3

10

-2

10

-1

10

101
-80

10

-70

Incident light level (W/cm2)

-60

-50

-40

-30

-20

-10

Element temperature (C)

KIRDB0462EA

KIRDB0463EA

Thermistor temperature characteristic

Cooling characteristics of TE-cooler

(Typ.)

1 M

40

[Typ. Ta=25 C, thermal resistance of heatsink=3 C/W (one and two-stage TE-cooler),
1.2 C/W (three-stage TE-cooler)]
Bias current: 0 V

Element temperature (C)

20

Resistance

100 k

10 k

One-stage
TE-cooled type

Two-stage
TE-cooled type

-20

-40
Three-stage
TE-cooled type
-60

1 k
-80

-60

-40

-20

20

40

Element temperature (C)

-80

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

TE-cooler current (A)

KIRDB0168EA

KIRDB0177EB

InSb photoconductive detectors

P6606 series

Current vs. voltage of TE-cooler

[Typ. Ta=25 C, thermal resistance of heatsink=3 C/W (one and two-stage TE-cooler),
1.2 C/W (three-stage TE-cooler)]

1.6
1.4

One-stage
TE-cooled type

Current (A)

1.2
1.0
0.8
0.6

Three-stage
TE-cooled type

0.4

Two-stage
TE-cooled type

0.2
0.0

0.5

1.0

1.5

2.0

2.5

Voltage (V)
KIRDB0500EA

Measurement circuit

Chopper
1200 Hz
Band-pass
filter

RMS
meter

Detector
Black body
500 K

fo=1200 Hz
f=120 Hz
Incident energy 2.64 W/cm2
KIRDC0005EB

InSb photoconductive detectors

P6606 series

Dimensional outlines (unit: mm)

P6606-110/-210
15.3 0.2

39 0.2

14 0.2

30.1 0.1

4 0.2

12 min.

Photosensitive Window
10 0.2
surface

11.6 0.2

19.4 0.2
7.0 0.2

0.45 0.1
Lead

25.4 0.2

10.0 0.2

Window
10 0.2

Photosensitive
surface

P6606-305/-310/-320

Pump-out pipe

12 1

1.0 0.1
Lead

Detector
Detector
TE-cooler (-)
TE-cooler (+)
Thermistor

25 max.

2.0 0.2

5.1 0.2

10.2 0.2

5 Max.
P6606-110 P6606-210

5.1 0.2
10.2 0.2

4.2 0.2

6.6 0.2

12.7 0.2

40

TE-cooler (+)
Detector
Thermistor
Pump-out pipe
NC
TE-cooler (-)

40

40

40

40

40

KIRDA0126EB

40
KIRDA0127EC

Information described in this material is current as of July, 2012.

Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
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North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Cat. No. KIRD1026E11 Jul. 2012 DN