IRFDC20, SiHFDC20

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY

Dynamic dV/dt Rating

VDS (V)

600

RDS(on) ()

4.4

Qg (Max.) (nC)

18

Qgs (nC)

3.0

Qgd (nC)

8.9

Configuration

RoHS*

For Automatic Insertion

COMPLIANT

End Stackable
Fast Switching
Ease of Paralleling

Single

Simple Drive Requirements

D

Compliant to RoHS Directive 2002/95/EC

HVMDIP

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.

G
S

Available

Repetitive Avalanche Rated

VGS = 10 V

S
N-Channel MOSFET

ORDERING INFORMATION
Package

HVMDIP
IRFDC20PbF

Lead (Pb)-free

SiHFDC20-E3
IRFDC20

SnPb

SiHFDC20

ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

600

Gate-Source Voltage

VGS

20

Continuous Drain Current

VGS at 10 V

TA = 25 C
TA = 100 C

Pulsed Drain Currenta

ID
IDM

Linear Derating Factor

UNIT
V

0.32
0.20

2.6
0.0083

W/C

EAS

50

mJ

Currenta

IAR

0.32

Repetitive Avalanche Energya

EAR

0.10

mJ

Single Pulse Avalanche Energyb

Repetitive Avalanche

Maximum Power Dissipation

TA = 25 C

Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)

for 10 s

PD

1.0

dV/dt

3.0

V/ns

TJ, Tstg

- 55 to + 150
300d

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 C, L = 54 mH, Rg = 25 , IAS = 1.3 A (see fig. 12).
c. ISD 4.4 A, dI/dt 90 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91142
S10-2464-Rev. C, 25-Oct-10

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IRFDC20, SiHFDC20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient

SYMBOL

TYP.

MAX.

UNIT

RthJA

120

C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS

VGS = 0 V, ID = 250 A

600

VDS/TJ

Reference to 25 C, ID = 1 mA

0.88

V/C

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient

VGS(th)

VDS = VGS, ID = 250 A

2.0

4.0

Gate-Source Leakage

IGSS

VGS = 20 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

25

VDS = 480V, VGS = 0 V, TJ = 125 C

250

Gate-Source Threshold Voltage

Drain-Source On-State Resistance

Forward Transconductance

RDS(on)
gfs

ID = 0.19 Ab

VGS = 10 V

VDS = 50 V, ID = 1.3 Ab

4.4

1.4

350

Dynamic
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time
Turn-Off Delay Time
Fall Time

tr
td(off)

VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5

VGS = 10 V

ID = 2.0 A, VDS = 360 V,

see fig.6 and 13b

VDD = 300 V, ID = 2.0 A,

Rg = 18 , RD = 150
see fig. 10b

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

Between lead,
6 mm (0.25") from
package and center of
die contact

pF

48

8.6

18

3.0

8.9

10

23

30

25

4.0

6.0

0.32

2.6

1.6

290

580

ns

0.67

1.3

nC

ns

nH
G

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

A
G

TJ = 25 C, IS = 0.32 A, VGS = 0 Vb
TJ = 25 C, IF = 2.0 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width 300 s; duty cycle 2 %

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Document Number: 91142

S10-2464-Rev. C, 25-Oct-10

IRFDC20, SiHFDC20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

20 s PULSE WIDTH
TA = 25 C

Fig. 1 - Typical Output Characteristics, TA = 25 C

Fig. 3 - Typical Transfer Characteristics

20 s PULSE WIDTH
TA = 150 C

Fig. 2 - Typical Output Characteristics, TA = 150 C

Document Number: 91142

S10-2464-Rev. C, 25-Oct-10

Fig. 4 - Normalized On-Resistance vs. Temperature

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IRFDC20, SiHFDC20
Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

TA = 25 C
TJ = 150 C
SINGLE PULSE

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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Fig. 8 - Maximum Safe Operating Area

Document Number: 91142

S10-2464-Rev. C, 25-Oct-10

IRFDC20, SiHFDC20
Vishay Siliconix
RD
VDS
VGS

D.U.T.

ID, Drain Current (A)

Rg

+
- VDD
10 V

Pulse width 1 s
Duty factor 0.1 %

Fig. 10a - Switching Time Test Circuit

VDS
90 %

10 %
VGS

TA, Ambient Temperature (C)

td(on)

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJA)

Fig. 9 - Maximum Drain Current vs. Ambient Temperature

td(off) tf

tr

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

L
Vary tp to obtain
required IAS

VDS

VDS
tp
D.U.T

Rg

VDD
+
-

IAS

V DD

VDS

10 V
tp

0.01 W

Fig. 12a - Unclamped Inductive Test Circuit

Document Number: 91142

S10-2464-Rev. C, 25-Oct-10

IAS
Fig. 12b - Unclamped Inductive Waveforms

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IRFDC20, SiHFDC20
Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.
50 k

QG

10 V

12 V

0.2 F
0.3 F

QGS

QGD

D.U.T.

VG

VDS

VGS
3 mA

Charge
IG
ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

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Fig. 13b - Gate Charge Test Circuit

Document Number: 91142

S10-2464-Rev. C, 25-Oct-10

IRFDC20, SiHFDC20
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer

D.U.T.

Rg

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Driver gate drive

P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91142.

Document Number: 91142

S10-2464-Rev. C, 25-Oct-10

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Package Information
Vishay Siliconix
HVM DIP (High voltage)
0.248 [6.29]
0.240 [6.10]

0.043 [1.09]
0.035 [0.89]

0.197 [5.00]
0.189 [4.80]

0.133 [3.37]
0.125 [3.18]

0.180 [4.57]
0.160 [4.06]
0.094 [2.38]
0.086 [2.18]

L
0.160 [4.06]
0.140 [3.56]

0 to 15
2x

0.017 [0.43]
0.013 [0.33]

0.045 [1.14]
2 x 0.035 [0.89]

E min.

0.024 [0.60]
4x
0.020 [0.51]

0.100 [2.54] typ.

E max.

INCHES

MILLIMETERS

DIM.

MIN.

MAX.

MIN.

0.310

0.330

7.87

MAX.
8.38

0.300

0.425

7.62

10.79

0.270

0.290

6.86

7.36

ECN: X10-0386-Rev. B, 06-Sep-10

DWG: 5974
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.

Document Number: 91361

Revision: 06-Sep-10

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Legal Disclaimer Notice

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Vishay

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical
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about the suitability of products for a particular application. It is the customers responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000