FQPF11N50CF

FQPF11N50CF
N-Channel QFET FRFET MOSFET

500 V, 11 A, 550 m
Description
Features
This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductors proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
11 A, 500 V, RDS(on) = 550 m (Max.) @ VGS = 10 V,

ID = 5.5 A
Low Gate Charge (Typ. 43 nC)
Low Crss (Typ. 20 pF)
100% Avalanche Tested
Fast Recovery Body Diode
G
D
S
TO-220F
S
Absolute Maximum Ratings

Symbol
TC = 25C unless otherwise noted.
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25C)

- Continuous (TC = 100C)
IDM
Drain Current
VGSS
Gate-Source voltage
- Pulsed
(Note 1)
FQPF11N50CF
Unit
500
11*
7*
44*
30
EAS
Single Pulsed Avalanche Energy
(Note 2)
670
mJ
IAR
Avalanche Current
(Note 1)
11
EAR
Repetitive Avalanche Energy
(Note 1)
19.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
(TC = 25C)
- Derate above 25C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,

1/8 from Case for 5 Seconds
48
0.39
W/C
-55 to +150
300
FQPF11N50CF
Unit
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case, Max.
2.58
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
2005 Fairchild Semiconductor Corporation

FQPF11N50CF Rev. C1
oC/W
www.fairchildsemi.com
FQPF11N50CF N-Channel QFET FRFET MOSFET
November 2013
Device Marking
FQPF11N50CF
Device
FQPF11N50CF
Electrical Characteristics
Symbol
Package
TO-220F
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
TC = 25C unless otherwise noted.
Parameter
Conditions
Min
Typ
Max
Unit
500
--
--
0.5
--
V/C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
BVDSS
/ TJ
Breakdown Voltage Temperature

Coefficient
ID = 250 A, Referenced to 25C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
10
VDS = 400 V, TC = 125C
--
--
100
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
2.0
--
4.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.5 A
--
0.48
0.55
gFS
Forward Transconductance
VDS = 40 V, ID = 5.5 A
--
15
--
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1515
2055
pF
--
185
235
pF
--
25
30
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 11 A
RG = 25
(Note 4)
VDS = 400 V, ID = 11 A
VGS = 10 V
(Note 4)
--
24
57
ns
--
70
150
ns
--
120
250
ns
--
75
160
ns
--
43
55
nC
--
--
nC
--
19
--
nC
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
11
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
44
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 11 A
--
--
1.4
trr
Reverse Recovery Time
--
90
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 11 A
dIF/dt =100 A/s
--
1.5
--
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10 mH, IAS = 11 A, VDD = 50 V, RG = 25 , starting TJ = 25C
3. ISD 11 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C
4. Essentially independent of operating temperature.

FQPF11N50CF Rev. C1
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 4.5 V
10
ID, Drain Current [A]
Top :
Figure 2. Transfer Characteristics
10
* Notes :
1. 250s Pulse Test
2. TC = 25C
150C
10
25C
-55C
* Notes :
1. VDS = 40V
2. 250s Pulse Test
-1
10
-1
10
10
10
10
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperatue
0.9
IDR, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
1.0
0.8
0.7
VGS = 10V
0.6
VGS = 20V
0.5
0.4
0.3
* Note : TJ = 25C
10
150C
10
25C
* Notes :
1. VGS = 0V
2. 250s Pulse Test
-1
10
15
20
25
30
35
10
40
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
1.2
1.4
1.6
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
VGS, Gate-Source Voltage [V]
Crss = Cgd
3000
Capacitances [pF]
1.0
12
4000
Ciss
Coss
2000
1000
0.8
VSD, Source-Drain voltage [V]
Crss
* Note ;
1. VGS = 0 V
2. f = 1 MHz
10
VDS = 100V
VDS = 250V
VDS = 400V
* Note : ID = 11A
0
-1
10
10
10
10
20
30
40
50
QG, Total Gate Charge [nC]

FQPF11N50CF Rev. C1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2. ID = 250A
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
0.5
2. ID = 5.5 A
0.8
-100
-50
50
100
150
0.0
-100
200
-50
TJ, Junction Temperature [C]
50
100
150
200
TJ, Junction Temperature [ C]
Figure 10. Maximum Drain Current

vs. Case Temperature
Figure 9. Maximum Safe Operating Area
10
12
10 s
10
100 s
1 ms
10
10 ms
100 ms
0
10
DC
Operation in This Area

is Limited by R DS(on)
* Notes :
o
1. TC = 25 C
-1
10
2. TJ = 150 C
3. Single Pulse
0
25
-2
10
10
10
10
10
50
75
100
125
150
TJ, Junction Temperature [ C]
ZJC(t), Thermal Response [oC/W]
Figure 11. Transient Thermal Response Curve
10
D = 0 .5
0 .2
0 .1
PDM
0 .0 5
10
t1
-1
0 .0 2
0 .0 1
C /W M a x .
2 . D u ty F a c to r , D = t1 /t2
3 . T J M - T C = P D M * Z JC ( t)
s i n g le
e pu se
10
t2
* N o te s :
1 . Z J C ( t) = 2 .5 8
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

FQPF11N50CF Rev. C1
Typical Performance Characteristics (Continued)
Figure 12. Gate Charge Test Circuit & Waveform
50K
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms

VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
tp

FQPF11N50CF Rev. C1
VDS (t)
VDD
DUT
tp
Time
DUT
+
VDS
_
I SD
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current

di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop

FQPF11N50CF Rev. C1
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

FQPF11N50CF Rev. C1
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

FQPF11N50CF Rev. C1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock
F-PFS
AccuPower
FRFET
AX-CAP*
*
SM
BitSiC
Global Power Resource
PowerTrench
GreenBridge
PowerXS
Build it Now
TinyBoost
Green FPS
Programmable Active Droop
CorePLUS
TinyBuck
Green FPS e-Series

QFET
CorePOWER
TinyCalc
QS
Gmax
CROSSVOLT
TinyLogic
Quiet Series
GTO
CTL
TINYOPTO
RapidConfigure
IntelliMAX
Current Transfer Logic
TinyPower
ISOPLANAR
DEUXPEED
TinyPWM
Dual Cool
Marking Small Speakers Sound Louder
TinyWire
EcoSPARK
Saving our world, 1mW/W/kW at a time
and Better
TranSiC
EfficentMax
SignalWise
MegaBuck
TriFault Detect
ESBC
SmartMax
MICROCOUPLER
TRUECURRENT*
SMART START
MicroFET
SerDes
Solutions for Your Success
MicroPak
SPM
MicroPak2
Fairchild
STEALTH
MillerDrive
Fairchild Semiconductor
UHC
SuperFET
MotionMax
FACT Quiet Series
Ultra FRFET
SuperSOT-3
mWSaver
FACT
UniFET
SuperSOT-6
OptoHiT
FAST
VCX
SuperSOT-8
OPTOLOGIC
FastvCore
VisualMax
OPTOPLANAR
SupreMOS
FETBench
VoltagePlus
SyncFET
FPS
XS

FQPF11N50CF

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

FQPF11N50CF

Uploaded by

Copyright:

Available Formats

FQPF11N50CF

N-Channel QFET FRFET MOSFET

This N-Channel enhancement mode power MOSFET is

11 A, 500 V, RDS(on) = 550 m (Max.) @ VGS = 10 V,

Absolute Maximum Ratings

TC = 25C unless otherwise noted.

- Continuous (TC = 25C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

*Drain current limited by maximum junction temperature

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

2005 Fairchild Semiconductor Corporation

FQPF11N50CF N-Channel QFET FRFET MOSFET

TC = 25C unless otherwise noted.

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = 250 A, Referenced to 25C

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

VDS = 400 V, TC = 125C

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

2005 Fairchild Semiconductor Corporation

FQPF11N50CF N-Channel QFET FRFET MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

ID, Drain Current [A]

ID, Drain Current [A]

Figure 2. Transfer Characteristics

2. 250s Pulse Test

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

IDR, Reverse Drain Current [A]

2. 250s Pulse Test

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Ciss = Cgs + Cgd (Cds = shorted)

VGS, Gate-Source Voltage [V]

VSD, Source-Drain voltage [V]

ID, Drain Current [A]

QG, Total Gate Charge [nC]

VDS, Drain-Source Voltage [V]

2005 Fairchild Semiconductor Corporation