Professional Documents
Culture Documents
www.ti.com
TM
FEATURES
D 2125 W at 10% THD+N Into 4-W BTL
D 298 W at 10% THD+N Into 6-W BTL
D 276 W at 10% THD+N Into 8-W BTL
D 445 W at 10% THD+N Into 3-W SE
D 435 W at 10% THD+N Into 4-W SE
D 1192 W at 10% THD+N Into 3-W PBTL
D 1240 W at 10% THD+N Into 2-W PBTL
D >100-dB SNR (A-Weighted)
D <0.1% THD+N at 1 W
D Thermally Enhanced Package Option:
DKD (36-Pin PSOP3)
Undervoltage
Overtemperature
Overload
Short Circuit
D Error Reporting
D EMI Compliant When Used With
110
APPLICATIONS
D Mini/Micro Audio System
D DVD Receiver
D Home Theater
DESCRIPTION
The TAS5152 is a third-generation, high-performance,
integrated stereo digital amplifier power stage with
improved protection system. The TAS5152 is capable
of driving a 4- bridge-tied load (BTL) at up to 125 W
per channel with low integrated noise at the output, low
THD+N performance, and low idle power dissipation.
100
PO Output Power W
TC = 75C
THD+N @ 10%
120
90
80
70
6
60
50
40
30
20
10
0
0
10
15
20
25
30
35
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PurePath Digital and PowerPAD are trademarks of Texas Instruments.
Other trademarks are the property of their respective owners.
! "#$ %!& %
"! "! '! ! !( ! %% )*&
% "!+ %! !!$* $%! !+ $$ "!!&
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
GENERAL INFORMATION
The TAS5152 is available in a 36-pin PSOP3 (DKD)
thermally enhanced package. The package contains a
heat slug that is located on the top side of the device for
convenient thermal coupling to the heatsink.
DKD PACKAGE
(TOP VIEW)
GVDD_B
OTW
SD
PWM_A
RESET_AB
PWM_B
OC_ADJ
GND
AGND
VREG
M3
M2
M1
PWM_C
RESET_CD
PWM_D
VDD
GVDD_C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
GVDD_A
BST_A
PVDD_A
OUT_A
GND_A
GND_B
OUT_B
PVDD_B
BST_B
BST_C
PVDD_C
OUT_C
GND_C
GND_D
OUT_D
PVDD_D
BST_D
GVDD_D
M2
M1
PWM INPUT
OUTPUT
CONFIGURATION
PROTECTION
SCHEME
2N (1) AD/BD
modulation
2 channels
BTL output
Reserved
1N (1) AD
modulation
2 channels
BTL output
1N (1) AD
modulation
1 channel
PBTL output
PBTL mode.
Only PWM_A
input is used.
4 channels
SE output
Protection works
similarly to BTL
mode (2). Only
difference in SE
mode is that
OUT_x is Hi-Z
instead of a
pulldown through
internal pulldown
resistor.
1N (1) AD
modulation
Reserved
1
1
1
(1) The 1N and 2N naming convention is used to indicate the required
number of PWM lines to the power stage per channel in a specific
mode.
(2) An overload protection (OLP) occurring on A or B causes both
channels to shut down. An OLP on C or D works similarly. Global
errors like overtemperature error (OTE), undervoltage protection
(UVP) and power-on reset (POR) affect all channels.
TAS5152DKD
1.28
2.56
8.6
80 mm2
www.ti.com
Ordering Information
0.3 V to 13.2 V
GVDD_X to AGND
0.3 V to 13.2 V
0.3 V to 50 V
0.3 V to 63.2 V
VREG to AGND
0.3 V to 4.2 V
GND_X to GND
0.3 V to 0.3 V
GND_X to AGND
0.3 V to 0.3 V
GND to AGND
0.3 V to 0.3 V
0.3 V to 4.2 V
PACKAGE
DESCRIPTION
TAS5152DKD
36-pin PSOP3
0.3 V to 50 V
TA
0C to 70C
0.3 V to 7 V
9 mA
0C to 125C
40_C to 125_C
260_C
50 ns
www.ti.com
Terminal Functions
TERMINAL
NAME
NO.
FUNCTION (1)
FUNCTION
AGND
Analog ground
BST_A
35
BST_B
28
BST_C
27
BST_D
20
GND
Ground
GND_A
32
GND_B
31
GND_C
24
GND_D
23
GVDD_A
36
GVDD_B
GVDD_C
18
GVDD_D
19
M1
13
M2
12
M3
11
OC_ADJ
OTW
OUT_A
33
Output, half-bridge A
OUT_B
30
Output, half-bridge B
OUT_C
25
Output, half-bridge C
OUT_D
22
Output, half-bridge D
PVDD_A
34
PVDD_B
29
PVDD_C
26
PVDD_D
21
PWM_A
PWM_B
PWM_C
14
PWM_D
16
RESET_AB
RESET_CD
15
SD
VDD
17
Power supply for digital voltage regulator requires 0.1-F capacitor to GND.
VREG
10
(1) I = input, O = Output, P = Power
DESCRIPTION
www.ti.com
OTW
System
Microcontroller
SD
TAS5508
OTW
SD
BST_A
BST_B
RESET_AB
RESET_CD
VALID
PWM_A
LeftChannel
Output
OUT_A
Output
H-Bridge 1
Input
H-Bridge 1
PWM_B
OUT_B
Bootstrap
Capacitors
2nd-Order L-C
Output Filter
for Each
Half-Bridge
2-Channel
H-Bridge
BTL Mode
OUT_C
PWM_C
35 V
PVDD
System
Power
Supply
GND
12 V
PVDD
PowerSupply
Decoupling
OC_ADJ
AGND
VREG
M3
OUT_D
2nd-Order L-C
Output Filter
for Each
Half-Bridge
BST_C
VDD
M2
GND
PVDD_A, B, C, D
M1
GVDD_A, B, C, D
Input
H-Bridge 2
PWM_D
Hardwire
Mode
Control
Output
H-Bridge 2
GND_A, B, C, D
RightChannel
Output
BST_D
Bootstrap
Capacitors
4
GVDD
VDD
VREG
Power-Supply
Decoupling
Hardwire
OC Limit
GND
VAC
www.ti.com
OTW
Internal Pullup
Resistors to VREG
SD
M1
Protection
and
I/O Logic
M2
M3
4
VREG
VREG
Power
On
Reset
AGND
Temp.
Sense
GND
RESET_AB
Overload
Protection
RESET_CD
Isense
OC_ADJ
GVDD_D
BST_D
PVDD_D
PWM_D
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_D
BTL/PBTLConfiguration
Pulldown Resistor
GND_D
GVDD_C
BST_C
PVDD_C
PWM_C
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_C
BTL/PBTLConfiguration
Pulldown Resistor
GND_C
GVDD_B
BST_B
PVDD_B
PWM_B
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_B
BTL/PBTLConfiguration
Pulldown Resistor
GND_B
GVDD_A
BST_A
PVDD_A
PWM_A
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_A
BTL/PBTLConfiguration
Pulldown Resistor
GND_A
www.ti.com
MIN
NOM
MAX
UNIT
PVDD_x
Half-bridge supply
DC supply voltage
35
37
GVDD_x
DC supply voltage
10.8
12
13.2
VDD
DC supply voltage
10.8
12
13.2
RL (BTL)
RL (SE)
Load impedance
RL (PBTL)
LOutput (BTL)
2
10
LOutput (SE)
Output-filter inductance
Output-filter
LOutput (PBTL)
FPWM
TJ
1.5
10
10
192
Junction temperature
384
432
kHz
125
_C
Po
PARAMETER
THD+N
Vn
SNR
DNR
Dynamic range
CONDITIONS
MIN
TYP
MAX
UNIT
125
98
76
96
72
57
0 dBFS
0.1
1W
0.02
A-weighted
145
A-weighted
102
dB
102
dB
110
dB
Pidle
Power dissipation due to idle losses (IPVDDx)
PO = 0 W, 2 channels switching (2)
(1) SNR is calculated relative to 0-dBFS input level.
(2) Actual system idle losses are affected by core losses of output inductors.
www.ti.com
Po
PARAMETER
THD+N
Vn
SNR
DNR
CONDITIONS
MIN
45
35
35
25
MAX
UNIT
0 dBFS
0.2
1W
0.03
A-weighted
90
A-weighted
100
dB
100
dB
Dynamic range
TYP
Pidle
Power dissipation due to idle losses (IPVDDx)
(1) SNR is calculated relative to 0-dBFS input level.
(2) Actual system idle losses are affected by core losses of output inductors.
Po
PARAMETER
THD+N
Vn
SNR
DNR
Dynamic range
CONDITIONS
TYP
MAX
UNIT
192
240
145
190
0 dBFS
0.2
1W
0.02
A-weighted
160
A-weighted
102
dB
102
dB
110
dB
Pidle
Power dissipation due to idle losses (IPVDDx)
PO = 0 W, 1 channel switching (2)
(1) SNR is calculated relative to 0-dBFS input level.
(2) Actual system idle losses are affected by core losses of output inductors.
MIN
www.ti.com
ELECTRICAL CHARACTERISTICS
RL= 4 . FPWM = 384 kHz, unless otherwise noted. All performance is in accordance with recommended operating conditions unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
TAS5152
MIN
TYP
MAX
UNITS
IVDD
IGVDD_x
IPVDD_x
VDD = 12 V
3.3
3.6
17
11
mA
16
Reset mode
0.3
15
25
mA
25
mA
Drain-to-source resistance, LS
140
155
RDSon,HS
Drain-to-source resistance, HS
140
155
www.ti.com
PARAMETER
CONDITIONS
TAS5152
MIN
TYP
MAX
UNITS
I/O Protection
Vuvp,G
Undervoltage protection limit, GVDD_x
Vuvp,hyst(1) Undervoltage protection hysteresis
OTW(1)
Overtemperature warning
115
9.8
250
mV
125
135
_C
25
Overtemperature error
145
155
_C
165
_C
OTE-OTW
OTE-OTW differential
differential(1)
30
_C
25
_C
1.25
ms
OLPC
IOC
IOCT
ROCP
RPD
8.5
10.8
11.8
69
210
Resistor tolerance = 5%
15
ns
2.5
VIL
Leakage
10
0.8
10
OTW/SHUTDOWN (SD)
RINT_PU
VOH
VOL
Low-level output voltage
FANOUT
Device fanout OTW , SD
(1) Specified by design
10
20
26
32
3.3
3.6
4.5
5
0.2
30
0.4
V
V
Devices
www.ti.com
OUTPUT POWER
vs
SUPPLY VOLTAGE
10
TC = 75C
THD+N @ 10%
120
110
100
PO Output Power W
130
TC = 75C
PVDD = 35 V
One Channel
0.1
90
80
70
6
60
50
40
30
20
8
0.01
10
0
10
100
10
15
20
25
PO Output Power W
Figure 1
Figure 2
SYSTEM EFFICIENCY
vs
OUTPUT POWER
130
30
35
100
120
TC = 75C
90
110
80
8
70
90
80
Efficiency %
PO Output Power W
100
70
60
50
40
60
50
40
30
30
20
20
10
TC = 25C
Two Channels
10
0
0
10
15
20
25
30
35
25
50
PO Output Power W
Figure 3
Figure 4
11
www.ti.com
50
150
TC = 25C
45
130
40
120
PO Output Power W
4
35
Power Loss W
140
30
25
20
15
10
110
100
90
80
70
60
50
40
30
20
THD+N @10%
10
0
0
25
50
10
20
30
40
60
70
80
TC Case Temperature C
Figure 5
Figure 6
NOISE AMPLITUDE
vs
FREQUENCY
0
TC = 75C
60 dB
1 kHz
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0
10
12
14
f Frequency kHz
Figure 7
12
50
PO Output Power W
16
18
20
22
www.ti.com
OUTPUT POWER
vs
SUPPLY VOLTAGE
TC = 75C
THD+N @ 10%
45
40
PO Output Power W
10
1
3
0.1
35
30
25
20
15
4
10
4
0.01
0
1
10
50
10
15
20
25
PO Output Power W
Figure 8
Figure 9
30
35
OUTPUT POWER
vs
CASE TEMPERATURE
60
3
55
50
PO Output Power W
50
TC = 75C
PVDD = 35 V
One Channel
45
40
35
30
25
20
15
10
5
THD+N@ 10%
0
10
20
30
40
50
60
70
80
TC Case Temperature C
Figure 10
13
www.ti.com
OUTPUT POWER
vs
SUPPLY VOLTAGE
10
TC = 75C
THD+N @ 10%
240
220
200
PO Output Power W
260
TC = 75C
PVDD = 35 V
One Channel
2
0.1
180
160
140
120
100
80
60
0.01
40
20
0
10
100
10
20
25
Figure 11
Figure 12
SYSTEM OUTPUT POWER
vs
CASE TEMPERATURE
300
THD+N @ 10%
280
PO Output Power W
260
240
3
220
200
180
160
140
120
100
10
20
30
40
50
60
70
80
TC Case Temperature C
Figure 13
14
15
PO Output Power W
30
35
www.ti.com
3.3
100 nF
47 F
50 V
10
1000 F
50 V
10 nF
50 V
10 nF
50 V
TAS5152DKD
100 nF
1
Microcontroller
0
Optional
BKND_ERR
GVDD_B
GVDD_A
35
OTW
SD
VALID
22 k
PWM_P_2
OUT_A
RESET_AB
GND_A
PWM_B
GND_B
OC_ADJ
OUT_B
12
13
14
28
AGND
BST_B
VREG
BST_C
26
M3
PVDD_C
M2
OUT_C
M1
GND_C
PWM_C
GND_D
RESET_CD
OUT_D
10
47 F
50 V
47 F
50 V
100 nF
50 V
3.3
470 nF
100 V
23
10 H @ 10 A
PVDD_D
17
100 nF
50 V
20
BST_D
19
18
GVDD_C
10 nF
50 V
10 H @ 10 A
24
21
PWM_D
100 nF
100 nF
50 V
22
VDD
10 F
33 nF
100 nF
50 V
25
16
GVDD
33 nF
27
15
10 nF
50 V
29
PVDD_B
10
100 nF 11
3.3
30
TAS5508
100 nF
50 V
31
GND
470 nF
100 V
10 H @ 10 A
32
3.3
10 H @ 10 A
33
PWM_A
8
PWM_M_2
100 nF
50 V
34
PVDD_A
6
PWM_M_1
33 nF
BST_A
4
PWM_P_1
100 nF
50 V
36
47 F
50 V
100 nF
50 V
3.3
10 nF
50 V
33 nF
GVDD_D
PVDD
100 nF
100 nF
10
3.3
10 nF
50 V
1000 F
50 V
Figure 14. Typical Differential (2N) BTL Application With AD Modulation Filters
15
www.ti.com
3.3
100 nF
47 F
50 V
10
1000 F
50 V
10 nF
50 V
10 nF
50 V
TAS5152DKD
100 nF
1
Microcontroller
0
Optional
BKND_ERR
GVDD_B
GVDD_A
35
OTW
SD
VALID
OUT_A
RESET_AB
GND_A
PWM_B
GND_B
OC_ADJ
OUT_B
11
12
13
14
28
AGND
BST_B
VREG
BST_C
26
M3
PVDD_C
M2
OUT_C
M1
GND_C
PWM_C
GND_D
RESET_CD
OUT_D
10
100 nF
47 F
50 V
47 F
50 V
3.3
470 nF
100 V
10 H @ 10 A
PVDD_D
100 nF
50 V
20
BST_D
19
18
GVDD_C
100 nF
50 V
23
21
PWM_D
10 nF
50 V
10 H @ 10 A
22
VDD
10 F
100 nF
50 V
24
17
GVDD
33 nF
100 nF
50 V
25
16
No connect
33 nF
27
15
10 nF
50 V
29
PVDD_B
10
TAS5508
3.3
30
9
100 nF
100 nF
50 V
31
GND
470 nF
100 V
10 H @ 10 A
32
3.3
10 H @ 10 A
33
PWM_A
8
PWM_P_2
100 nF
50 V
34
PVDD_A
6
No connect
22 k
33 nF
BST_A
4
PWM_P_1
100 nF
50 V
36
47 F
50 V
50 nF
100 V
3.3
10 nF
50 V
33 nF
GVDD_D
PVDD
100 nF
100 nF
10
3.3
10 nF
50 V
1000 F
50 V
Figure 15. Typical Non-Differential (1N) BTL Application With AD Modulation Filters
16
www.ti.com
100 nF
GVDD
10 F
PVDD
47 F
50 V
10
3.3
TAS5152DKD
100 nF
1
Microcontroller
0
Optional
BKND_ERR
GVDD_B
GVDD_A
35
OTW
VALID
SD
PVDD_A
39 k
PWM_P_3
33
PWM_A
OUT_A
RESET_AB
GND_A
PWM_B
GND_B
OC_ADJ
OUT_B
30
29
PVDD_B
TAS5508
12
13
14
BST_B
VREG
BST_C
27
M3
PVDD_C
M2
OUT_C
M1
GND_C
PWM_C
GND_D
RESET_CD
OUT_D
47 F
50 V
23
10 H @ 10 A
D
21
PWM_D
PVDD_D
100 nF
50 V
20
BST_D
GVDD_D
PVDD
100 nF
100 nF
3.3
100 nF
100 V
PVDD
220 F
50 V
1 F
50 V
100 nF
100 V
10 nF
50 V
100 nF
100 V
3.3
C
10 nF @ 50 V
2.7 k
PVDD
3.3
PVDD/2
220 F
50 V
1 F
50 V
100 nF
100 V
10 nF
50 V
3.3
10 nF @ 50 V
3.3
PVDD/2
220 F
50 V
220 F
50 V
100 nF
100 V
B
2.7 k
PVDD
1000 F
50 V
10 nF
50 V
10
2.7 k
47 F
50 V
33 nF
19
18
GVDD_C
10
10 H @ 10 A
22
VDD
10 F
47 F
50 V
100 nF
50 V
24
17
100 nF
100 nF
50 V
25
16
1
33 nF
26
15
GVDD
33 nF
28
AGND
10
11
31
GND
100 nF
10 H @ 10 A
32
8
PWM_P_4
10 H @ 10 A
100 nF
50 V
34
6
PWM_P_2
33 nF
BST_A
4
PWM_P_1
1000 F
50 V
10 nF
50 V
36
220 F
50 V
PVDD/2
1 F
50 V
100 nF
100 V
10 nF
50 V
100 nF
100 V
3.3
D
10 nF @ 50 V
2.7 k
PVDD
3.3
220 F
50 V
1 F
50 V
100 nF
100 V
10 nF
50 V
3.3
10 nF @ 50 V
3.3
PVDD/2
220 F
50 V
220 F
50 V
www.ti.com
3.3
100 nF
47 F
50 V
10
1000 F
50 V
10 nF
50 V
10 nF
50 V
TAS5152DKD
100 nF
1
Microcontroller
0
Optional
BKND_ERR
GVDD_B
GVDD_A
35
OTW
SD
VALID
30 k
OUT_A
RESET_AB
GND_A
PWM_B
GND_B
OC_ADJ
OUT_B
TAS5508
13
14
28
AGND
BST_B
VREG
BST_C
26
M3
PVDD_C
M2
OUT_C
M1
GND_C
PWM_C
GND_D
RESET_CD
OUT_D
10
47 F
50 V
47 F
50 V
10 H @ 10 A
23
10 H @ 10 A
22
21
PVDD_D
100 nF
50 V
20
VDD
100 nF
100 nF
50 V
24
17
10 F
33 nF
100 nF
50 V
25
16
GVDD
33 nF
27
PWM_D
BST_D
19
18
GVDD_C
47 F
50 V
33 nF
GVDD_D
PVDD
100 nF
100 nF
10
3.3
10 nF
50 V
1000 F
50 V
Figure 17. Typical Differential (2N) PBTL Application With AD Modulation Filters
18
3.3
10 nF
50 V
29
PVDD_B
15
100 nF
100 V
30
10
12
470 nF
63 V
31
11
10 H @ 10 A
10 H @ 10 A
32
GND
3.3
33
PWM_A
100 nF
100 nF
50 V
34
PVDD_A
6
PWM_M_1
33 nF
BST_A
4
PWM_P_1
100 nF
100 V
36
www.ti.com
3.3
100 nF
47 F
50 V
10
1000 F
50 V
10 nF
50 V
TAS5152DKD
100 nF
1
Microcontroller
0
Optional
BKND_ERR
GVDD_B
GVDD_A
35
OTW
SD
VALID
OUT_A
RESET_AB
GND_A
PWM_B
GND_B
OC_ADJ
OUT_B
13
14
No connect
28
AGND
BST_B
VREG
BST_C
26
M2
OUT_C
M1
GND_C
PWM_C
GND_D
RESET_CD
OUT_D
10
100 nF
47 F
50 V
100 nF
100 V
3.3
10 nF
50 V
10 H @ 10 A
24
23
10 H @ 10 A
22
21
PWM_D
PVDD_D
100 nF
50 V
20
VDD
10 F
100 nF
50 V
470 nF
63 V
47 F
50 V
25
17
GVDD
33 nF
100 nF
50 V
PVDD_C
16
No connect
33 nF
27
M3
3.3
29
PVDD_B
15
100 nF
100 V
30
10
12
10 nF
50 V
31
GND
TAS5508
10 H @ 10 A
32
11
10 H @ 10 A
33
PWM_A
100 nF
100 nF
50 V
34
PVDD_A
6
No connect
30 k
33 nF
BST_A
4
PWM_P_1
36
BST_D
19
18
GVDD_C
47 F
50 V
33 nF
GVDD_D
PVDD
100 nF
100 nF
10
3.3
10 nF
50 V
1000 F
50 V
19
www.ti.com
THEORY OF OPERATION
POWER SUPPLIES
To facilitate system design, the TAS5152 needs only a
12-V supply in addition to the (typically) 35-V power-stage
supply. An internal voltage regulator provides suitable
voltage levels for the digital and low-voltage analog
circuitry. Additionally, all circuitry requiring a floating
voltage supply, e.g., the high-side gate drive, is
accommodated by built-in bootstrap circuitry requiring
only a few external capacitors.
In order to provide outstanding electrical and acoustical
characteristics, the PWM signal path including gate drive
and output stage is designed as identical, independent
half-bridges. For this reason, each half-bridge has
separate gate drive supply (GVDD_X), bootstrap pins
(BST_X), and power-stage supply pins (PVDD_X).
Furthermore, an additional pin (VDD) is provided as supply
for all common circuits. Although supplied from the same
12-V source, it is highly recommended to separate
GVDD_A, GVDD_B, GVDD_C, GVDD_D, and VDD on
the printed-circuit board (PCB) by RC filters (see
application diagram for details). These RC filters provide
the recommended high-frequency isolation. Special
attention should be paid to placing all decoupling
capacitors as close to their associated pins as possible. In
general, inductance between the power-supply pins and
decoupling capacitors must be avoided. (See reference
board documentation for additional information.)
For a properly functioning bootstrap circuit, a small
ceramic capacitor must be connected from each bootstrap
pin (BST_X) to the power-stage output pin (OUT_X).
When the powerstage output is low, the bootstrap
capacitor is charged through an internal diode connected
between the gate-drive power-supply pin (GVDD_X) and
the bootstrap pin. When the power-stage output is high,
the bootstrap capacitor potential is shifted above the
output potential and thus provides a suitable voltage
supply for the high-side gate driver. In an application with
PWM switching frequencies in the range 352 kHz to 384
kHz, it is recommended to use 33-nF ceramic capacitors,
size 0603 or 0805, for the bootstrap supply. These 33-nF
capacitors ensure sufficient energy storage, even during
minimal PWM duty cycles, to keep the high-side
power-stage FET (LDMOS) fully turned on during the
remaining part of the PWM cycle. In an application running
at a reduced switching frequency, generally 192 kHz, the
bootstrap capacitor might need to be increased in value.
Special attention should be paid to the power-stage power
supply; this includes component selection, PCB
placement and routing. As indicated, each half-bridge has
independent power-stage supply pins (PVDD_X). For
optimal electrical performance, EMI compliance, and
20
SYSTEM POWER-UP/POWER-DOWN
SEQUENCE
Powering Up
The TAS5152 does not require a power-up sequence. The
outputs of the Hbridges remain in a high-impedance state
until the gate-drive supply voltage (GVDD_X) and VDD
voltage are above the undervoltage protection (UVP)
voltage threshold (see the Electrical Characteristics
section of this data sheet). Although not specifically
required, it is recommended to hold RESET_AB and
RESET_CD in a low state while powering up the device.
This allows an internal circuit to charge the external
bootstrap capacitors by enabling a weak pulldown of the
half-bridge output.
When the TAS5152 is being used with TI PWM modulators
such as the TAS5508, no special attention to the state of
RESET_AB and RESET_CD is required, provided that the
chipset is configured as recommended.
Powering Down
The TAS5152 does not require a power-down sequence.
The device remains fully operational as long as the
gate-drive supply (GVDD_X) voltage and VDD voltage are
above the undervoltage protection (UVP) voltage
threshold (see the Electrical Characteristics section of this
data sheet). Although not specifically required, it is a good
practice to hold RESET_AB and RESET_CD low during
power down, thus preventing audible artifacts including
pops or clicks.
When the TAS5152 is being used with TI PWM modulators
such as the TAS5508, no special attention to the state of
RESET_AB and RESET_CD is required, provided that the
chipset is configured as recommended.
www.ti.com
ERROR REPORTING
The SD and OTW pins are both active-low, open-drain
outputs. Their function is for protection-mode signaling to
a PWM controller or other system-control device.
Any fault resulting in device shutdown is signaled by the
SD pin going low. Likewise, OTW goes low when the
device junction temperature exceeds 125C (see the
following table).
SD
OTW
DESCRIPTION
www.ti.com
The UVP and POR circuits of the TAS5152 fully protect the
device in any power-up/down and brownout situation.
While powering up, the POR circuit resets the overload
circuit (OLP) and ensures that all circuits are fully
operational when the GVDD_X and VDD supply voltages
reach 9.8 V (typical). Although GVDD_X and VDD are
independently monitored, a supply voltage drop below the
UVP threshold on any VDD or GVDD_X pin results in all
half-bridge outputs immediately being set in the
high-impedance state (Hi-Z) and SD being asserted low.
The device automatically resumes operation when all
supply voltages have increased above the UVP threshold.
15
10.8
22
9.4
27
8.6
39
6.4
47
69
4.7
Overtemperature Protection
The TAS5152 has a two-level temperature-protection
system that asserts an active-low warning signal (OTW)
when the device junction temperature exceeds 125C
(nominal) and, if the device junction temperature exceeds
155C (nominal), the device is put into thermal shutdown,
22
DEVICE RESET
Two reset pins are provided for independent control of
half-bridges A/B and C/D. When RESET_AB is asserted
low, all four power-stage FETs in half-bridges A and B are
forced into a high-impedance state (Hi-Z). Likewise,
asserting RESET_CD low forces all four power-stage
FETs in half-bridges C and D into a high-impedance state.
Thus, both reset pins are well suited for hard-muting the
power stage if needed.
In BTL modes, to accommodate bootstrap charging prior
to switching start, asserting the reset inputs low enables
weak pulldown of the half-bridge outputs. In the SE mode,
the weak pulldowns are not enabled, and it is therefore
recommended to ensure bootstrap capacitor charging by
providing a low pulse on the PWM inputs when reset is
asserted high.
Asserting either reset input low removes any fault
information to be signalled on the SD output, i.e., SD is
forced high.
A rising-edge transition on either reset input allows the
device to resume operation after an overload fault.
www.ti.com
18-Apr-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Eco Plan
Lead/Ball Finish
(2)
(6)
(3)
Op Temp (C)
Device Marking
(4/5)
TAS5152DKD
ACTIVE
HSSOP
DKD
36
29
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-4-260C-72 HR
0 to 70
TAS5152
TAS5152DKDG4
ACTIVE
HSSOP
DKD
36
29
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-4-260C-72 HR
0 to 70
TAS5152
TAS5152DKDR
ACTIVE
HSSOP
DKD
36
500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-4-260C-72 HR
0 to 70
TAS5152
TAS5152DKDRG4
ACTIVE
HSSOP
DKD
36
500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-4-260C-72 HR
0 to 70
TAS5152
(1)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 1
Samples
www.ti.com
18-Apr-2016
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
18-Jun-2009
Device
TAS5152DKDR
SPQ
HSSOP
500
DKD
36
Reel
Reel
Diameter Width
(mm) W1 (mm)
330.0
24.4
Pack Materials-Page 1
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
14.7
16.4
4.0
20.0
24.0
Q1
18-Jun-2009
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TAS5152DKDR
HSSOP
DKD
36
500
337.0
343.0
41.0
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as components) are sold subject to TIs terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TIs terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TIs goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or enhanced plastic are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products
Applications
Audio
www.ti.com/audio
www.ti.com/automotive
Amplifiers
amplifier.ti.com
www.ti.com/communications
Data Converters
dataconverter.ti.com
www.ti.com/computers
DLP Products
www.dlp.com
Consumer Electronics
www.ti.com/consumer-apps
DSP
dsp.ti.com
www.ti.com/energy
www.ti.com/clocks
Industrial
www.ti.com/industrial
Interface
interface.ti.com
Medical
www.ti.com/medical
Logic
logic.ti.com
Security
www.ti.com/security
Power Mgmt
power.ti.com
www.ti.com/space-avionics-defense
Microcontrollers
microcontroller.ti.com
www.ti.com/video
RFID
www.ti-rfid.com
www.ti.com/omap
TI E2E Community
e2e.ti.com
Wireless Connectivity
www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright 2016, Texas Instruments Incorporated