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4N60
Power MOSFET
DESCRIPTION
FEATURES
SYMBOL
www.unisonic.com.tw
Copyright 2015 Unisonic Technologies Co., Ltd
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QW-R502-061.Z
4N60
Power MOSFET
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
4N60L-TA3-T
4N60G-TA3-T
TO-220
4N60L-TF1-T
4N60G-TF1-T
TO-220F1
4N60L-TF2-T
4N60G-TF2-T
TO-220F2
4N60L-TF3-T
4N60G-TF3-T
TO-220F
4N60L-TF3T-T
4N60G-TF3T-T
TO-220F3
4N60L-TM3-T
4N60G-TM3-T
TO-251
4N60L-TMS-T
4N60G-TMS-T
TO-251S
4N60L-TN3-R
4N60G-TN3-R
TO-252
4N60L-TND-R
4N60G-TND-R
TO-252D
4N60L-T2Q-T
4N60G-T2Q-T
TO-262
4N60L-TQ2-T
4N60G-TQ2-T
TO-263
4N60L-TQ2-R
4N60G-TQ2-R
TO-263
4N60G-K08-5060-R
DFN-8(56)
Note: Pin Assignment: G: Gate D: Drain S: Source
1
G
G
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3
4
5
6
S
S
S
S
S
S
S
S
S
S
S
S
S G D D
7
D
8
D
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Tube
Tape Reel
Tape Reel
MARKING
PACKAGE
TO-220
TO-251S
TO-220F
TO-252
TO-220F1
TO-252D
TO-220F2
TO-262
TO-220F3
TO-263
TO-251
MARKING
DFN-8(56)
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4N60
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
30
V
Avalanche Current (Note 2)
IAR
4.4
A
4.0
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
16
A
260
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
TO-220F/TO-220F1
36
TO-220F3
Power Dissipation
TO-220F2
PD
38
W
TO-251/TO-251S
50
TO-252/TO-252D
DFN-8(56)
30
Junction Temperature
TJ
+150
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25C
4. ISD4.4A, di/dt 200A/s, VDDBVDSS, Starting TJ = 25C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-251S
TO-252/TO-252D
DFN-8(56)
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
DFN-8(56)
SYMBOL
RATINGS
UNIT
62.5
JA
/W
110
75
1.18
3.47
JC
3.28
/W
2.5
4.17
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Power MOSFET
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
TEST CONDITIONS
0.6
V
10
A
100 A
100 nA
-100 nA
V/
1.9
4.0
2.5
550
80
30
670
100
50
pF
pF
pF
35
80
160
120
80
5
20
55
110
200
150
100
ns
ns
ns
ns
nC
nC
nC
1.4
4.4
17.6
2.0
250
1.5
ns
C
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Power MOSFET
D.U.T.
+
VDS
-
+
-
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
P.W.
P. W.
Period
VGS= 10V
di/dt
IRM
Body Diode Reverse Current
VDD
Body Diode
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Power MOSFET
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Time
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TYPICAL CHARACTERISTICS
Drain-Source On-Resistance,
RDS(ON) (Normalized) ()
Power MOSFET
On-State Characteristics
10
VGS
10V
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
Transfer Characteristics
10
Top:
25
5.0V
150
0.1
Notes:
1. 250s Pulse Test
2. TC=25
0.1
10
Notes:
1. VDS=50V
2. 250s Pulse Test
0.1
2
10
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TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
(Non-Repetitive)
1200
1000
12
10
Ciss
800
600
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
Coss
Notes:
1. VGS=0V
2. f = 1MHz
0
0.1
VDS=120V
6
4
400
200
VDS=300V
VDS=480V
Crss
Note: ID=4A
0
1
10
10
15
20
25
PD (w)
Power MOSFET
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4N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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