AON7410

30V N-Channel MOSFET

General Description

Features

The AON7410 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in DC - DC
converters and Load Switch applications.

VDS (V) = 30V

ID = 24A
RDS(ON) < 20m
RDS(ON) < 26m

(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)

100% UIS Tested

100% Rg Tested

Top View

DFN 3x3 EP
Bottom View

Top View
1

Pin 1

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TC=25C

Continuous Drain
Current B

Avalanche Current

Power Dissipation

15

IDM

50

Junction and Storage Temperature Range

Maximum Junction-to-Case B

7.7

IAS, IAR

17

EAS, EAR

14

mJ

20
8.3
2

TJ, TSTG

-55 to 150

Symbol
t 10s
Steady-State
Steady-State

Alpha & Omega Semiconductor, Ltd.

3.1

PDSM

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A

IDSM

PD

TC=100C
TA=25C

Power Dissipation

9.5

TA=70C

Repetitive avalanche energy L=0.1mH

TC=25C

20

ID

TA=25C

Continuous Drain
Current A

Units
V

24

TC=100C

Pulsed Drain Current

Maximum
30

RJA
RJC

Typ
30
60
5

Max
40
75
6

Units
C/W
C/W
C/W

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AON7410

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V

1
TJ=55C

IGSS

Gate-Body leakage current

VDS=0V, VGS= 20V

Gate Threshold Voltage

VDS=VGS ID=250A

1.4

ID(ON)

On state drain current

VGS=10V, VDS=5V

50

100

VGS=10V, ID=8A

1.8

2.5

16

20

24

29

21

26

Forward Transconductance

VDS=5V, ID=8A

30

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.75

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs

Gate Source Charge

VGS=10V, VDS=15V, ID=8A

nA
V

m
S

20

A
pF

440

550

660

77

110

143

pF

33

55

77

pF

4.9

7.8

9.8

12

nC

3.6

4.6

5.5

nC

1.4

1.8

2.2

nC

1.3

2.2

nC

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf
trr

Turn-Off Fall Time

IF=8A, dI/dt=500A/s

11

Qrr

Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/s

12

15

18

Body Diode Reverse Recovery Time

VGS=4.5V, ID=7A
gFS

TJ=125C

Units
V

VDS=30V, VGS=0V

Static Drain-Source On-Resistance

Max

30

VGS(th)

RDS(ON)

Typ

VGS=10V, VDS=15V, RL=2,

RGEN=3

ns

3.2

ns

24

ns

ns
ns
nC

A: The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
Power dissipation PDSM is based on RJA t 10s value and the maximum allowed junction temperature of 150C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
150
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.
Rev11: Jul-2011

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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AON7410

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50

50

VDS= 5V

10V

4.5V
4V

40

40

30
ID(A)

ID (A)

30
3.5V

20

20

125C
10

10

VGS= 3V

25C
0

0
0

VDS (Volts)
Figure 1: On-Region Characteristics
26
Normalized On-Resistance

RDS(ON) (m
)

3
4
VGS(Volts)
Figure 2: Transfer Characteristics

1.8

24

VGS= 4.5V

22
20
18

VGS= 10V

16
14
0

10

15

VGS= 10V
ID= 8A

1.6

1.4

VGS= 4.5V
ID= 7A

1.2

1.0

0.8

IF=-6.5A,
dI/dt=100A/s
20
25
30

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

1E+02

50
ID= 8A

45

1E+01

40

1E+00

35

1E-01

30

IS (A)

RDS(ON) (m
)

125C

25

1E-02

125C

1E-03

20

25C

1E-04

15

25C

1E-05

10

1E-06
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics

1.2

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AON7410

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

800

10
VDS= 15V
ID= 8A
Capacitance (pF)

VGS (Volts)

Ciss

600

400

200

Coss

2
Crss
0

0
0

10

10

15

25

30

VDS (Volts)
Figure 8: Capacitance Characteristics

Qg (nC)
Figure 7: Gate-Charge Characteristics

300

100

TJ(Max)=150C
TC=25C

10s
10

100s

Power (W)

ID (Amps)

20

1ms
DC

1
RDS(ON)
limited

200

100

0.1
TJ(Max)=150C
TA=25C

0.01
0.1

10

100

VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)

0.00001 0.0001 0.001

0.01

0.1

10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junctionto-Case (Note F)

Z JC Normalized Transient
Thermal Resistance

10

D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC
RJC=6C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1
PD
0.01

Single Pulse

Ton

0.001
0.00001

0.0001

0.001

0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)

Alpha & Omega Semiconductor, Ltd.

100

1000

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AON7410

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

20
Current rating ID(A)

Power Dissipation (W)

25

15
10
5
0

20

10

0
0

25

50

75

100

125

150

25

TCASE (
C)
Figure 12: Power De-rating (Note F)

50

75

100

125

150

TCASE (
C)
Figure 13: Current De-rating (Note F)

1000
TA=25C

Power (W)

100

10

1
0.0001 0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)

Z JA Normalized Transient
Thermal Resistance

10

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
D=Ton/T
RJA=75C/W
TJ,PK=TA+PDM.ZJA.RJA

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

RJA=75C/W
0.1

0.01

Single Pulse
Single Pulse

0.001
0.00001

0.0001

0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance(Note H)

Alpha & Omega Semiconductor, Ltd.

0.001

100

1000

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AON7410

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V

+ Vds

VDC

Qgs

Qgd

VDC

DUT
Vgs
Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds

Vgs

90%

+ Vdd

DUT

VDC

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

t on

tf
t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

EAR= 1/2 LIAR

Vds

BVDSS

Vds

Id

+ Vdd

Vgs

Vgs

I AR

VDC

Rg

Id

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT
Vgs

Vds Isd

Vgs
Ig

Alpha & Omega Semiconductor, Ltd.

Isd

+ Vdd

t rr

dI/dt
I RM
Vdd

VDC

IF

Vds

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