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Makarand Lokhande
Asst. Professor,
School of Solar Energy, PDPU,
Raisan-382007, Gandhinagar, Gujarat, India.
makarand.lokhande@sse.pdpu.ac.in
Mukesh Patel
Asst. Professor & Head, Electrical Engg. Dept.,
Sankalchand Patel College of Engineering,
Visnagar, Gujarat, India.
profmrpatel@gmail.com
AbstractThe paper presents the simulation of the BP SX150S
Solar Photovoltaic module using Matlab Simulink. The I-V & PV characteristics are obtained for various values of solar
insolation keeping the cell temperature constant. The Maximum
Power Point Tracking (MPPT) algorithm, which is based on the
incremental conductance method, is also described. The P-V
characteristics are obtained for various insolations using M-file
showing MPP using Incremental conductance method. Also, the
points indicating Module voltage Vmp and Current Imp at
maximum power Pmax are obtained.
Keywords
Photovoltaic
modules,
MPPT,
Matlab/Simulink, insolation, Incremental conductance
Method
I.
INTRODUCTION
q ( V / N S + IR S ) / N P )
I = N P I PH N P IS exp
1
kTC A
(N P V / N S + IR S ) / R SH
(1)
where, IPH is a light-generated
generated current or photocurrent, IS is
the cell saturation of dark current, q (= 1.6 1019C) is an
electron charge, k (= 1.38 10 23J/K) is a Boltzmanns
constant, TC is the cells working
rking temperature, A is an ideal
factor, RSH is a shunt resistance, and RS is a series resistance.
The photocurrent mainly depends on the solar insolation and
cells working temperature, which is described as
(2)
where ISC is the cells short-circuit
circuit current at a 25C and
1kW/m2, KI is the cells short-circuit current
rent temperature
coefficient, TRef is the cells reference temperature, and is
the solar insolation in kW/m2. On the other hand, the cells
saturation current varies
ries with the cell temperature, which is
described as
1
1
qEG (
)
T
T
ref
C
I S = I RS (TC / Tref )3 exp[
]
kA
(3)
where IRS is the cells reverse saturation current at a
reference temperature and a solar radiation ,EG is the bang
bang-gap
energy of the semiconductor used in the cell. The ideal factor
A is dependent on PV technology [4]] and is listed in Table I.
TABLE I
FACTOR A DEPENDENCE ON PV TECHNOLOGY [9]
Technology
Si Mono
Si-Poly
a-Si:H
a-Si:H tandem
a-Si:H triple
CdTe
CTS
AsGa
IPH = ISC
(1)
On the other hand, the VOC parameter is obtained by
assuming the output current is zero. Given the PV open
open-circuit
voltage VOC at reference temperature and ignoring the shunt
shuntleakage current, the reverse saturation current at reference
temperature can be approximately obtained as
qVOC
I RS = ISC / exp
1
NS kTC A
(5)
In addition, the maximum power can be expressed as
1.2
13
18
3.3
5
1.5
1.5
13
In this section the characteristic equations (1), (2), (3) & (5)
for the PV module is implemented in MatLab Simulink as
shown in Fig. 3.
The parameters chosen for modeling corresponds to the BP
SX150S module as listed in Table II. The voltage V is
considered varying from 0 to open circuit voltage Voc
corresponding to the variation in current from short circuit
current Isc to 0. Fig.4 & 5 shows the V-I & P-V
V characteristics
with the variation in solar insolation level at a constant cell
temperature of 25 degrees respectively. It can be seen that the
short circuit current as well as the power increases with the
increase in insolation level, while very little change in the
open-circuit voltage.
Parameter
Maximum Power (Pmax)
Voltage at Pmax (Vmp)
Current at Pmax (Imp)
Warranted minimum Pmax
Short circuit current (I sc )
Open-circuit voltage (Voc)
Maximum System Voltage
Temp. Co-efficient of Isc
Temp. Co-efficient of Voc
Temp. Co-efficient of Power
NOCT
Value
150 W
34.5 V
4.35 A
140 W
4.755 A
43.5 V
600 V
(0.065+-0.015)%/C
0.015)%/C
20) mv/C
-(160+-20)
-(0.5+-0.05)
0.05) %/C
47+-2 0C
Fig.5 P-V
V Characteristics for different insolation
IV.
V.
CONCLUSIONS
[3]
[4]
[5]
[6]
[7]
Fig. 8 Module Voltage at Maximum Power, Vmp