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Operating Voltage
one
140m
2.4A
6.5A
5.5...40V
two parallel
70m
3.9A
6.5A
P-DSO-12
General Description
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
Applications
C compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
Protection Functions
Block Diagram
Diagnostic Function
IN1
ST1
IN2
ST2
Logic
Channel 1
Channel 2
Load 1
Load 2
GND
Infineon Technologies AG
Vbb
2003-Oct-01
BTS 5210L
Functional diagram
GND
internal
voltage supply
logic
current limit
gate
control
+
charge
pump
VBB
clamp for
inductive load
OUT1
IN1
ST1
ESD
temperature
sensor
reverse
battery
protection
Open load
detection
channel 1
IN2
ST2
Infineon Technologies AG
2003-Oct-01
BTS 5210L
Symbol
GND
IN1
IN2
ST1
ST2
Vbb
7,9,11
8
10
NC
OUT2
OUT1
Pin configuration
Function
Ground of chip
Input 1,2 activates channel 1,2 in case of logic
high signal
Diagnostic feedback 1 & 2 of channel 1,2
open drain, low on failure
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
Not Connected
Output 1,2 protected high-side power output
of channel 1 and 2. Design the wiring for the
max. short circuit current
Infineon Technologies AG
(top view)
GND
IN1
ST1
IN2
ST2
Vbb
1
2
3
4
5
6
Vbb*
12
11
10
9
8
7
Vbb
NC
OUT1
NC
OUT2
NC
* heat slug
2003-Oct-01
BTS 5210L
Maximum Ratings at Tj = 25C unless otherwise specified
Parameter
Symbol
Vbb
Vbb
Values
Unit
43
36
V
V
IL
VLoad dump3)
self-limited
60
A
V
Tj
Tstg
Ptot
-40 ...+150
-55 ...+150
3,05
1,59
ZL
14
7.6
mH
VESD
1.0
4.0
8.0
kV
V
mA
1)
2)
3)
4)
5)
VIN
IIN
IINp
IST
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
only for testing
Infineon Technologies AG
2003-Oct-01
BTS 5210L
Thermal Characteristics
Parameter and Conditions
Symbol
min
Thermal resistance
junction - Case6)
junction ambient6)
@ 6 cm2 cooling area
Values
typ
max
Unit
5
----
K/W
Values
min
typ
max
Unit
-----
--45
40
Electrical Characteristics
Parameter and Conditions, each of the four channels
Symbol
----
110
210
55
140
280
70
1.8
3.4
2.4
3.9
--
--
--
mA
---
100
100
250
270
0.2
0.2
---
1.0
1.1
V/s
V/s
Turn-off time
RL = 12
Slew rate on 8)
Slew rate off 8)
6)
7)
8)
IN
IN
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
not subject to production test, specified by design
See timing diagram on page 12.
Infineon Technologies AG
2003-Oct-01
BTS 5210L
Parameter and Conditions, each of the four channels
Symbol
Operating Parameters
Operating voltage
Undervoltage switch off9)
Overvoltage protection11)
I bb = 40 mA
Standby current12)
VIN = 0; see diagram page 11
Vbb(on)
Tj =-40C...25C: Vbb(u so)
Tj =125C:
Vbb(AZ)
Tj =-40C...25C: Ibb(off)
Tj =150C:
Tj =125C:
Off-State output current (included in Ibb(off))
IL(off)
VIN = 0; each channel
Operating current 13), VIN = 5V,
one channel on: IGND
all channels on:
Protection Functions14)
Current limit, Vout = 0V, (see timing diagrams, page 12)
Tj =-40C: IL(lim)
Tj =25C:
Tj =+150C:
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
two channels
Values
min
typ
max
Unit
5.5
--41
---47
40
4.5
4.510)
52
V
V
-----
4.5
--1
8
12
810)
5
---
0.5
1.0
0.9
1.7
mA
--5
-9
--
14
---
---
6.5
6.5
---
--
--
ms
41
150
--
47
-10
52
---
V
VON(CL)
Tjt
Tjt
9)
10
11)
12)
13)
14)
15)
C
K
is the voltage, where the device doesnt change its switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
not subject to production test, specified by design
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 9.
Measured with load; for the whole device; all channels off
Add IST, if IST > 0
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
Infineon Technologies AG
2003-Oct-01
BTS 5210L
Parameter and Conditions, each of the four channels
Symbol
Reverse Battery
Reverse battery voltage 16)
Drain-source diode voltage (Vout > Vbb)
IL = - 2.0 A, Tj = +150C
-Vbb
-VON
Values
min
typ
max
Unit
---
-600
32
--
V
mV
Diagnostic Characteristics
Open load detection voltage
V OUT(OL)
1.7
2.8
4.0
RI
2.5
4.0
6.0
VIN(T+)
VIN(T-)
VIN(T)
td(STon)
-1.0
---
--0.2
10
2.5
--20
V
V
V
s
td(STon)
30
--
--
td(SToff)
--
--
500
td(SToff)
--
--
20
IIN(off)
IIN(on)
5
10
-35
20
60
A
A
VST(high)
VST(low)
5.4
--
---
-0.6
16)
Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
17) If ground resistors R
GND are used, add the voltage drop across these resistors.
18) not subject to protection test, specified by design
Infineon Technologies AG
2003-Oct-01
BTS 5210L
Truth Table
( each channel )
Normal operation
Open load
Overtemperature
L = "Low" Level
H = "High" Level
IN
OUT
ST
L
H
L
H
L
H
Z
H
H
H
L
H
L
L
L19)
H
H
L
X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel (see truth
table). If switching channel 1 to 2 in parallel, the status outputs ST1 and ST2 have to be configured as a 'Wired
OR' function with a single pull-up resistor.
Terms
Ibb
V
12,6
bb
I IN1
I IN2
VIN1 V IN2
V
2
4
I ST1
I ST2
Vbb
IN1
IN2
OUT1
10
I L1
I L2
PROFET
OUT2
ST1
ST2
V
ON1
V
ON2
Leadframe
GND
ST1 V ST2
1
I
R
GND
OUT1
V
OUT2
GND
19)
Infineon Technologies AG
2003-Oct-01
BTS 5210L
Overvolt. and reverse batt. protection
+ 5V
R
IN
+ Vbb
R ST
V
IN
ESD-ZD I
RI
Z2
Logic
I
R ST ST
GND
OUT
V
Z1
GND
R GND
Signal GND
ST
ESDZD
GND
Load GND
+5V
R ST(ON)
R Load
ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
bb
R
EXT
OFF
OUT1 or OUT2
+Vbb
VZ
Logic
unit
V
OUT
Open load
detection
ON
Signal GND
OUT
GND disconnect
Power GND
Vbb
PROFET
OUT
ST
GND
V
bb
IN
ST
V
GND
Infineon Technologies AG
2003-Oct-01
BTS 5210L
Inductive load switch-off energy
dissipation
E bb
IN
Vbb
E AS
PROFET
OUT
IN
ST
GND
PROFET
=
V
V
bb
IN ST
ZL
{
R
EL
ER
EL = 1/2LI L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)iL(t) dt,
Vbb
PROFET
ST
GND
IN
OUT
GND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
high
ELoad
Vbb
EAS=
ST
IL L
(V + |VOUT(CL)|)
2RL bb
ln (1+ |V
ILRL
OUT(CL)|
GND
bb
ZL [mH]
1000
Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current
flows through the GND connection.
100
10
1
1
IL [A]
Infineon Technologies AG
10
2003-Oct-01
BTS 5210L
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [mOhm]
Tj = 150C
240
180
25C
120
-40C
60
0
5
11
30
40
Vbb [V]
50
100
150
200
Tj [C]
Infineon Technologies AG
11
2003-Oct-01
BTS 5210L
Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to
channel 4
Figure 2b: Switching a lamp:
IN
IN2
V bb
ST
OUT1
OUT
OUT2
IN
IN1
VOUT
I
90%
t on
L1
dV/dtoff
L(lim)
I
dV/dton
10%
L(SCr)
off
t
IL
ST
off(SC)
Infineon Technologies AG
12
2003-Oct-01
BTS 5210L
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
Open load of channel 1; other channels normal
operation
IN1
I
L1
+I
VOUT1
L2
2xIL(lim)
I L1
I
L(SCr)
ST
off(SC)
ST1/2
10s
500s
t
ST1 and ST2 have to be configured as a 'Wired OR' function
ST1/2 with a single pull-up resistor.
IN1
IN
ST
ST
30s
20s
OUT
Infineon Technologies AG
13
2003-Oct-01
BTS 5210L
Standard: P-DSO-12-2
Ordering Code
Q67060-S7503
0.1
0.1 C 12x
Seating Plane
5 1 = 5
0.4 +0.13
0.25
-0.035
0.25 +0.075
0.7 0.15
(0.2)
1.6 0.1
(1.8)
0.25 B
4.2 0.1
0.8 0.1 -0.05 Depth 4)
1
6
7.8 0.1
Information
(Heatslug)
1)
Does not include
2)
Stand OFF
3)
Stand OUT
4)
(4.4)
CAB
10.3 0.3
7
Attention please!
5.1 0.1
12
7.5 0.1 1)
8
5 3
2.6 max.
2)
0.8
0 +0.1
6.4 0.1 1)
2.35 0.1
(1.55)
BTS 5210L
0.10.05 3)
Sales Code
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies AG
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
14
2003-Oct-01