2N7002A

N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT

Product Summary

Features and Benefits

N-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Description

Fast Switching Speed

Small Surface Mount Package

This MOSFET has been designed to minimize the on-state

resistance (RDS(ON)) and yet maintain superior switching

ESD Protected Gate, 1.2kV HBM

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

performance, making it ideal for high efficiency power management

Halogen and Antimony Free. Green Device (Note 3)

applications.

Qualified to AEC-Q101 Standards for High Reliability

V(BR)DSS

RDS(ON) max

60V

6 @ VGS = 5V

ID max
TA = +25C
200mA

Applications

Motor Control

Power Management Functions

Mechanical Data

Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208 e3

Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)

Drain

SOT23

Gate

ESD PROTECTED TO 1.2kV

Gate
Protection
Diode

Top View

Source

Equivalent Circuit

Top View
Pin-Out

Ordering Information (Note 4)

Part Number
2N7002A-7
2N7002A-13
Notes:

Case
SOT23
SOT23

Packaging
3,000/Tape & Reel
10,000/Tape & Reel

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporateds definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

2N7002A
Document number: DS31360 Rev. 12 - 2

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NEW PRODUCT

MN1

Chengdu A/T Site

Date Code Key
Year
Code
Month
Code

2008
V
Jan
1

2009
W
Feb
2

Mar
3

MN1 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

YM

YM

Marking Information

MN1

Shanghai A/T Site

2010
X
Apr
4

2011
Y
May
5

2012
Z

Jun
6

Jul
7

2013
A
Aug
8

2014
B

Sep
9

Oct
O

2015
C
Nov
N

Dec
D

Maximum Ratings (@TA = +25C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

60

Gate-Source Voltage

VGSS

20

ID

180
130
115

mA

ID

220
160
140

mA

IS

0.5

IDM

800

mA

Value
370
540
348
241

Units

Continuous Drain Current (Note 5) VGS = 10V

Steady
State

TA = +25C
TA = +85C
TA = +100C

Continuous Drain Current (Note 6) VGS = 10V

Steady
State

TA = +25C
TA = +85C
TA = +100C

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Drain Current (10s pulse, duty cycle = 1%)

Thermal Characteristics (@TA = +25C, unless otherwise specified.)

Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case

Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)

Operating and Storage Temperature Range

Notes:

PD
RJA
RJC

91

TJ, TSTG

-55 to +150

mW

C/W
C

5. Device mounted on FR-4 PCB, with minimum recommended pad layout

6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.

2N7002A
Document number: DS31360 Rev. 12 - 2

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Electrical Characteristics (@TA = +25C, unless otherwise specified.)

Characteristic
OFF CHARACTERISTICS (Note 7)
Zero Gate Voltage Drain Current

@ TC = +25C
@ TC = +125C

Gate-Body Leakage

Min

Typ

Max

Unit

BVDSS

60

70

VGS = 0V, ID = 10A

VDS = 60V, VGS = 0V

VGS = 20V, VDS = 0V

IDSS

1.0
500

IGSS

10

VGS(th)

1.2

2.0

RDS(ON)

3.5
3.0

6
5

gFS

80

mS

Test Condition

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance

@ TJ = +25C
@ TJ = +125C

Forward Transconductance

VDS = VGS, ID = 250A

VGS = 5.0V, ID = 0.115A
VGS = 10V, ID = 0.115A
VDS = 10V, ID = 0.115A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

23

pF

Output Capacitance

Coss

3.4

pF

Reverse Transfer Capacitance

Crss

1.4

pF

Gate Resistance

RG

260

400

VDS = 0V, VGS = 0V, f = 1.0MHz

VDD = 30V, ID = 0.115A, RL = 150,
VGEN = 10V, RGEN = 25

VDS = 25V, VGS = 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS (Note 8)

Turn-On Delay Time

tD(ON)

10

ns

Turn-Off Delay Time

tD(OFF)

33

ns

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

0.6

1
VDS = 5V
Pulsed

0.5

0.4

0.3

0.2

ID, DRAIN CURRENT (A)

NEW PRODUCT

Drain-Source Breakdown Voltage

Symbol

0.1

0.1

TA = 150C
T A = 85C

TA = 25C
T A = -55C

2N7002A
Document number: DS31360 Rev. 12 - 2

0.01
1

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2
3
4
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics

July 2013
Diodes Incorporated

2N7002A

2.5

RDS(ON), STATIC DRAIN-SOURCE

ON-RESISTANCE ()

2.0
7
6

1.5

1.0

VGS = 5V

4
3

VGS = 10V

0.5

2
1

0.1
0.2
0.3
0.4
0.5
0.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
100

1.9
1.8

ID = 250A

CT, CAPACITANCE (pF)

VGS(TH), GATE THRESHOLD VOLTAGE (V)

2.0

1.7
1.6
1.5
1.4
1.3

Ciss

10

Coss

1.2
1.1

1.0
-50

-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature

Crss

5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance

40

IS, SOURCE CURRENT (A)

NEW PRODUCT

0.1
TA = 150C
T A = 125C

0.01

TA = 85C

0.001

TA = 25C
TA = -55C

0.0001
0.1

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage

2N7002A
Document number: DS31360 Rev. 12 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

NEW PRODUCT

B C

H
K

K1
D

SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0
8

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y
Z

2N7002A
Document number: DS31360 Rev. 12 - 2

Dimensions Value (in mm)

Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35

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IMPORTANT NOTICE

NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright 2013, Diodes Incorporated
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2N7002A
Document number: DS31360 Rev. 12 - 2

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