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Product Summary
BVDSS
Max RDS(ON)
-30V
1 @ VGS = -4.5V
1.5 @ VGS = -2.5V
2 @ VGS = -1.8V
Max ID
@ TA = 25C
-0.67A
-0.54A
-0.47A
Mechanical Data
Case: SOT23
SOT23
D
D
G
S
Gate Protection
Diode
Top View
Internal Schematic
Top View
Equivalent Circuit
Case
SOT23
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporateds definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
P3U
2011
Y
Jan
1
~
~
Feb
2
DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2
2016
D
Mar
3
YM
Marking Information
2017
E
Apr
4
2018
F
May
5
Jun
6
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2019
G
Jul
7
2020
H
Aug
8
2021
I
Sep
9
2022
J
Oct
O
2023
K
Nov
N
Dec
D
April 2016
Diodes Incorporated
DMP31D0U
Steady
State
Symbol
VDSS
VGSS
Value
-30
8
Unit
V
V
ID
-0.67
-0.48
-0.53
IDM
2.5
Value
0.45
0.71
275
177
-55 to +150
Unit
W
W
C/W
C/W
C
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Power Dissipation
Thermal Resistance, Junction to Ambient
PD
RJA
TJ, TSTG
100
Single Pulse
Rthja = 176C/W
Rthja(t) = Rthja*r(t)
TJ - TA = P*Rthja (t)
90
80
70
60
50
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1,000
T1, PULSE DURATION SECTION (sec)
Fig. 1 Single Maximum Power Dissipation
1
r(t) @ D=0.5
r(t) @ D=0.9
r(t) @ D=0.3
0.1
r(t) @ D=0.7
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.01
0.01
r(t) @ D=0.01
RJA (t) = r(t)*RJA
RJA = 176C/W
Duty Cycle, D = t1/t2
r(t) @ D=0.005
r(t) @ D=Single Pulse
0.001
0.000001 0.00001
DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 2 Transient Thermal Resistance
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10
100
1,000
April 2016
Diodes Incorporated
DMP31D0U
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
-1
3
V
A
A
VGS(TH)
-0.5
RDS (ON)
|YFS|
VSD
50
-1.1
1
1.5
2
-1.2
mS
V
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
76
9
6.43
167
0.9
1.5
0.1
0.2
5.0
5.9
35.7
16.7
150
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDD = -10V, RL = 10
VGS = -4.5V, RG = 6
1.0
VGS = 4.5V
VGS = 1.8V
0.6
VDS = -5.0V
0.8
VGS = 2.5V
0.8
VGS = 1.5V
0.4
VGS = 1.2V
0.6
0.4
TA = 150C
0.2
0.2
TA = 125C
TA = 85C
TA = 25 C
TA = -55C
0
0
0
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 3 Typical Output Characteristics
DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2
3 of 7
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0.5
1.0
1.5
-V GS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Transfer Characteristics
2.0
April 2016
Diodes Incorporated
RDS(ON),DRAIN-SOURCE ON-RESISTANCE ()
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
0.8
-ID, DRAIN SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2
4
6
-VGS, GATE SOURCE VOLTAGE(V)
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.7
1.4
VGS = -4.5V
1.2
1.0
T A = 150 C
0.8
T A = 125 C
0.6
TA = 85C
T A = 25C
0.4
T A = -55C
0.2
0
1.6
1.0
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.2
0.4
0.6
0.8
-ID, DRAIN SOURCE CURRENT (A)
Fig. 7 Typical On-Resistance vs.
Drain Current and Temperature
1.5
1.3
1.1
0.9
0.7
0.5
-50
1.0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 8 On-Resistance Variation with Temperature
1.6
1.4
RDS(ON),DRAIN-SOURCE ON-RESISTANCE ()
DMP31D0U
1.4
1.2
1.0
VGS = -2.5V
ID = -250mA
0.8
0.6
0.4
VGS = -4.5V
ID = -500mA
0.2
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 9 On-Resistance Variation with Temperature
DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2
1.2
1.0
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
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April 2016
Diodes Incorporated
DMP31D0U
120
1.0
CT, JUNCTION CAPACITANCE (pF)
f = 1MHz
0.8
0.6
0.4
0.2
100
80
Ciss
60
40
20
Coss
0
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
100,000
Crss
5
10
15
20
25
-V DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Junction Capacitance
30
TA = 150C
10,000
TA = 125C
1,000
TA = 85C
100
10
TA = 25C
0.1
5
10
15
20
25
30
-V DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2
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0.4
0.8
1.2
1.6
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
2.0
April 2016
Diodes Incorporated
DMP31D0U
All 7
K1
GAUGE PLANE
0.25
a
M
L1
D
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0
8
All Dimensions in mm
Y1
DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2
Dimensions
C
X
X1
Y
Y1
X1
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April 2016
Diodes Incorporated
DMP31D0U
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright 2016, Diodes Incorporated
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DMP31D0U
Datasheet number: DS35754 Rev. 2 - 2
7 of 7
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April 2016
Diodes Incorporated