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atoms are the crystal; relaxation of the surface and interfacial eects distort the atomic positions, decreasing
the structural order. Even the most advanced structural
characterization techniques, such as x-ray diraction and
transmission electron microscopy, have diculty in distinguishing between amorphous and crystalline structures
on these length scales.
Nano-structured materials
layers serving as isolator above the conducting channel of a metal-oxide semiconductor eld-eect transistor (MOSFET). Also, hydrogenated amorphous silicon,
a-Si:H in short, is of technical signicance for thin lm
solar cells. In case of a-Si:H the missing long-range order
between silicon atoms is partly induced by the presence
by hydrogen in the percent range.
The occurrence of amorphous phases turned out as a
phenomenon of particular interest for studying thin lm
growth.[7] Remarkably, the growth of polycrystalline
lms is often used and preceded by an initial amorphous
layer, the thickness of which may amount to only a few
nm. The most investigated example is represented by thin
multicrystalline silicon lms, where such as the unoriented molecule. An initial amorphous layer was observed
in many studies.[8] Wedge-shaped polycrystals were identied by transmission electron microscopy to grow out of
the amorphous phase only after the latter has exceeded
a certain thickness, the precise value of which depends
on deposition temperature, background pressure and various other process parameters. The phenomenon has
been interpreted in the framework of Ostwalds rule of
stages[9] that predicts the formation of phases to proceed
with increasing condensation time towards increasing
stability.[5][8] Experimental studies of the phenomenon
require a clearly dened state of the substrate surface and
its contaminant density etc., upon which the thin lm is
deposited.
References
EXTERNAL LINKS
[7] Magnuson et al. Electronic Structure and Chemical Bonding of Amorphous Chromium Carbide Thin Films; J.
Phys. - Cond. Mat. 24 , 225004 (2012).
[8] M. Birkholz; B. Selle; W. Fuhs; S. Christiansen; H.
P. Strunk & R. Reich (2001). Amorphous-crystalline
phase transition during the growth of thin lms: the
case of microcrystalline silicon (PDF). Phys. Rev.
B 64 (8): 085402. Bibcode:2001PhRvB..64h5402B.
doi:10.1103/PhysRevB.64.085402.
[9] W. Ostwald (1897). Studien ber die Umwandlung fester
Krper. Z. Phys. Chem. 22: 289330.
4 Further reading
R. Zallen (1969). The Physics of Amorphous Solids.
Wiley Interscience.
S.R. Elliot (1969). The Physics of Amorphous Materials (2nd ed.). Longman.
N. Cusack (1969). The Physics of Structurally Disordered Matter: An Introduction. IOP Publishing.
N.H. March; R.A. Street; M.P. Tosi, eds. (1969).
Amorphous Solids and the Liquid State. Springer.
D.A. Adler; B.B. Schwartz; M.C. Steele, eds.
(1969). Physical Properties of Amorphous Materials. Springer.
A. Inoue; K. Hasimoto, eds. (1969). Amorphous
and Nanocrystalline Materials. Springer.
5 External links
Journal of non-crystalline solids (Elsevier)
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