SPW35N60CFD

CoolMOSTM Power Transistor

Product Summary

Features

V DS

New revolutionary high voltage technology

600

0.118

R DS(on),max

Intrinsic fast-recovery body diode

ID

34

Extremely low reverse recovery charge

Ultra low gate charge

PG-TO247

Extreme dv /dt rated

High peak current capability
Periodic avalanche rated
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant

Type

Package

Ordering Code

Marking

SPW35N60CFD

PG-TO247

Q67045A5053

35N60CFD

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

ID

Value

T C=25 C

34.1

T C=100 C

21.6
85

Pulsed drain current2)

I D,pulse

T C=25 C

Avalanche energy, single pulse

E AS

I D=10 A, V DD=50 V

1300

Avalanche energy, repetitive t AR2),3)

E AR

I D=20 A, V DD=50 V

Avalanche current, repetitive t AR2),3)

I AR

Drain source voltage slope

dv /dt

Reverse diode dv /dt

dv /dt

Maximum diode commutation speed

Gate source voltage

mJ

20

80

V/ns

40

V/ns

di /dt

I S=34.1 A, V DS=480 V,
T j=125 C

600

A/s

V GS

static

20

AC (f >1 Hz)

30

T C=25 C

313

-55 ... 150

Power dissipation

P tot

Operating and storage temperature

T j, T stg

Rev. 1.3

I D=34.1 A,
V DS=480 V, T j=125 C

Unit

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SPW35N60CFD
Parameter

Values

Symbol Conditions

Unit

min.

typ.

max.

0.4

leaded

62

1.6 mm (0.063 in.)

from case for 10 s

260

600

Thermal characteristics
Thermal resistance, junction - case

R thJC

Thermal resistance, junction ambient

R thJA

Soldering temperature, wave soldering T sold

K/W

Electrical characteristics, at T j=25 C, unless otherwise specified

Static characteristics
Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 A

Avalanche breakdown voltage

V (BR)DS

V GS=0 V, I D=34.1 A

700

Gate threshold voltage

V GS(th)

V DS=V GS, I D=1.9 mA

Zero gate voltage drain current

I DSS

V DS=600 V, V GS=0 V,
T j=25 C

V DS=600 V, V GS=0 V,
T j=150 C

3300

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=21.6 A,
T j=25 C

0.10

0.118

V GS=10 V, I D=21.6 A,
T j=150 C

0.23

Gate resistance

RG

f =1 MHz, open drain

0.6

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=21.6 A

21

Rev. 1.3

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SPW35N60CFD
Parameter

Values

Symbol Conditions

Unit

min.

typ.

max.

5060

1400

52

162

Dynamic characteristics
Input capacitance

C iss

Output capacitance

C oss

Reverse transfer capacitance

C rss

Effective output capacitance, energy

related4)

C o(er)

Effective output capacitance, time

related5)

C o(tr)

299

Turn-on delay time

t d(on)

20

Rise time

tr

25

Turn-off delay time

t d(off)

65

Fall time

tf

12

Gate to source charge

Q gs

36

Gate to drain charge

Q gd

87

Gate charge total

Qg

163

212

Gate plateau voltage

V plateau

7.2

V GS=0 V, V DS=25 V,
f =1 MHz

pF

V GS=0 V, V DS=0 V
to 480 V

V DD=400 V,
V GS=10 V, I D=34.1 A,
R G=3.3

ns

Gate Charge Characteristics

V DD=480 V,
I D=34.1 A,
V GS=0 to 10 V

1)

J-STD20 and JESD22

2)

Pulse width t p limited by T j,max

3)

Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.

4)

C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.

5)

C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Rev. 1.3

page 3

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SPW35N60CFD
Parameter

Values

Symbol Conditions

Unit

min.

typ.

max.

34.1

85

1.0

1.2

180

ns

1.5

16

Reverse Diode
Diode continuous forward current

IS

Diode pulse current

I S,pulse

Diode forward voltage

V SD

Reverse recovery time

t rr

Reverse recovery charge

Q rr

Peak reverse recovery current

I rrm

T C=25 C
V GS=0 V, I F=34.1 A,
T j=25 C

V R=480 V, I F=I S,
di F/dt =100 A/s

Typical Transient Thermal Characteristics

Symbol

Value

Unit

Symbol

typ.
R th1

0.00441

R th2

Value

Unit

typ.
K/W

C th1

0.00037

0.00608

C th2

0.00223

R th3

0.0341

C th3

0.00315

R th4

0.0602

C th4

0.0179

R th5

0.0884

C th5

0.098

C th6

4.45)

Ws/K

5)

C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
R thCA=0 K/W.

Rev. 1.3

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SPW35N60CFD
1 Power dissipation

2 Safe operating area

P tot=f(T C)

I D=f(V DS); T C=25 C; D =0

parameter: t p

400

102
limited by on-state
resistance

10 s

1 s

100 s

300
101

1 ms

10 ms

I D [A]

P tot [W]

DC

200

100
100

10-1

0
0

40

80

120

100

160

101

102

V DS [V]

T C [C]

3 Max. transient thermal impedance

4 Typ. output characteristics

I D=f(V DS); T j=25 C

I D=f(V DS); T j=25 C

parameter: D=t p/T

parameter: V GS

100

90
20 V

Z thJC [K/W]

8V

60

0.2

I D [A]

0.1

0.05

10-2

10 V

75

0.5

10-1

103

7V

0.02
0.01

45

30
single pulse

6.5 V

15

6V
5.5 V

10

-3

10

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

15

20

V DS [V]

t p [s]

Rev. 1.3

5V

0
-6

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SPW35N60CFD
5 Typ. output characteristics

6 Typ. drain-source on-state resistance

I D=f(V DS); T j=150 C

R DS(on)=f(I D); T j=150 C

parameter: V GS

parameter: V GS
0.5

60
10 V

20 V

50

0.4

8V

40

R DS(on) []

I D [A]

7V

30
6.5 V

0.3

5.5 V

5V

6.5 V

6V

7V

20 V

0.2

20
6V

0.1

5.5 V

10

5V

0
0

10

15

20

10

20

V DS [V]

30

40

I D [A]

7 Drain-source on-state resistance

8 Typ. transfer characteristics

R DS(on)=f(T j); I D=21.9 A; V GS=10 V

I D=f(V GS); |V DS|>2|I D|R DS(on)max

parameter: T j

0.3

150

0.25

120
C 25

90
0.15

I D [A]

R DS(on) []

0.2

98 %

60

typ

C 150

0.1

30

0.05

0
-60

-20

20

60

100

140

180

T j [C]

Rev. 1.3

10

V GS [V]

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SPW35N60CFD
9 Typ. gate charge

10 Forward characteristics of reverse diode

V GS=f(Q gate); I D=34.1 A pulsed

I F=f(V SD)

parameter: V DD

parameter: T j

12

102

25 C, 98%

120 V

25 C

10

150 C, 98%

480 V
150 C

101

I F [A]

V GS [V]

100

10-1

50

100

150

200

0.5

1.5

140

180

V SD [V]

Q gate [nC]

11 Avalanche SOA

12 Avalanche energy

I AR=f(t AR)

E AS=f(T j); I D=10 A; V DD=50 V

parameter: T j(start)
1400

25

1200
20
1000

I AV [A]

E AS [mJ]

15

10

800

600

25 C

125 C

400
5
200

0
10-3

0
10-2

10-1

100

101

102

103

t AR [s]

Rev. 1.3

20

60

100

T j [C]

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SPW35N60CFD
14 Typ. capacitances

V BR(DSS)=f(T j); I D=10 mA

C =f(V DS); V GS=0 V; f =1 MHz

700

105

660

104

C [pF]

V BR(DSS) [V]

13 Drain-source breakdown voltage

620

Ciss

103

Coss

102

580

Crss

101

540
-60

-20

20

60

100

140

180

100

200

T j [C]

300

400

500

125

150

V DS [V]

15 Typ. C oss stored energy

16 Typ. reverse recovery charge

E oss= f(V DS)

Q rr=f(T j); I S=34.1 A; di /dt =100 A/s

30

2.8
25
2.6
20

Q rr [C]

E oss [J]

2.4

15

2.2

2
10
1.8
5
1.6

1.4
0

100

200

300

400

500

600

V DS [V]

Rev. 1.3

25

50

75

100

T j [C]

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SPW35N60CFD
17 Typ. reverse recovery charge

18 Typ. reverse recovery charge

Q rr=f(I S); di/ dt =100 A/s

Q rr=f(di /dt ); I S=34.1 A

parameter: T j

parameter: T j

2.5
125 C

125 C

Q rr [C]

Q rr [C]

1.5

25 C

25 C

1
2
0.5

0
0

10

15

20

25

30

35

I S [A]

Rev. 1.3

0
0

300

600

900

di/ dt [A/s]

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SPW35N60CFD
Definition of diode switching characteristics

Rev. 1.3

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SPW35N60CFD
PG-TO247-3-21-41

Rev. 1.3

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SPW35N60CFD

Rev. 1.3

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2008-04-17