FDP3651U

FDP3651U
N-Channel PowerTrench MOSFET
100 V, 80 A, 18 m
Features
Applications
RDS(on) = 15 m ( Typ.) @ VGS = 10 V, ID = 80 A
Consumer Appliances
High Performance Trench Technology for Extremely
Synchronous Rectification
Low RDS(on)
Battery Protection Circuit
Low Miller Charge
Motor drives and Uninterruptible Power Supplies
UIS Capability (Single Pulse and Repetitive Pulse)
Micro Solar Inverter
GD
S
TO-220
S
MOSFET Maximum Ratings TC = 25C unless otherwise noted

Symbol
VDSS
VGSS
Drain to Source Voltage
FDP3651U
100
Unit
V
Gate to Source Voltage
20
Parameter
Drain Current - Continuous
ID
80
- Pulsed
PD
Power Dissipation
EAS
Single Pulsed Avalanche Energy
TJ, TSTG
Operating and Storage Temperature
TL
Maximum lead temperature soldering purposes,

1/8 from case for 5 seconds
(Note 1)
320
255
(Note 2)
266
mJ
-55 to 175
300
62
C/W
0.59
C/W
Thermal Characteristics
RJA
Thermal Resistance , Junction to Ambient, Max.
RJC
Thermal Resistance , Junction to Case, Max.
Package Marking and Ordering Information

Device Marking
FDP3651U
Device
FDP3651U
2006 Fairchild Semiconductor Corporation

FDP3651U Rev. C1
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
www.fairchildsemi.com
FDP3651U N-Channel PowerTrench MOSFET
October 2013
Symbol
Parameter
Test Conditions
Min
Typ
Max
100
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250A, VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS = 80V
VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = 20V
TC=150C
250
100
nA
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage

Drain to Source On Resistance
VGS = VDS, ID = -250A
3.5
4.5
5.5
VGS = 10V , ID = 80A
15
18
VGS = 10V , ID = 40A
13
15
VGS=10V, ID=40A,TJ=175oC
32
37
VDS = 25V,VGS = 0V
f=1MHz
4152
5522
pF
485
728
pF
89
118
pF
49
69
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(TOT)
Total Gate Charge
VGS = 0V to 10V
Qg(TH)
Threshold Gate Charge
VGS = 0V to 2V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain Charge
VDD = 50V
ID = 80A
9.8
nC
23
nC
16
nC
Resistive Switching Characteristics

t(on)
Turn-On Time
64
ns
td(on)
Turn-On Delay Time
15
27
ns
tr
Rise Time
16
29
ns
td(off)
Turn-Off Delay Time
32
52
ns
tf
Fall Time
14
26
ns
t(off)
Turn-Off Time
78
ns
ISD = 80A
0.99
1.25
ISD = 40A
0.88
1.0
VDD = 50V, ID = 80A

VGS = 10V, RGS = 5.0
Drain-Source Diode Characteristics

VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Is = 40 A, di/dt = 100A/s
70
105
ns
202
303
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=0.13mH, IAS = 64A, VDD=50V, RG=25 , Starting TJ=25oC

FDP3651U Rev. C1
Electrical Characteristics TJ = 25C unless otherwise noted
PULSE DURATION = 80s

DUTY CYCLE = 0.5%MAX
VGS = 20V
100
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
120
VGS = 10V
80
VGS = 8V
60
40
VGS = 7V
20
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 8V
3
2
VGS = 10V
1
VGS = 20V
40
60
80
100
120
60
2.4
RDS(on), ON-RESISTANCE (m)
ID = 80A
VGS = 10V
2.0
1.6
1.2
0.8
0.4
-80
-40
40
80
120
160
ID = 80A
50
TJ = 175oC
30
20
TJ = 25oC
10
0
200

40
TJ, JUNCTION TEMPERATURE (oC)
10
12
14
16
18
20
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction

Temperature
Figure 4. On-Resistance vs Gate to Source

Voltage
1000
IS, REVERSE DRAIN CURRENT (A)
120
20
Figure 2. Normalized On-Resistance vs Drain

Current and Gate Voltage
2.8

100
80
TJ = 175oC
60
40
TJ =
20
TJ = -55oC

VGS = 7V
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
25oC
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
TJ = 175oC
10
1
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics

FDP3651U Rev. C1
VGS = 0V
100
Figure 6. Source to Drain Diode Forward

Voltage vs Source Current
3
Typical Characteristics TC = 25C unless otherwise noted
10000
VGS, GATE TO SOURCE VOLTAGE(V)
10
Ciss
VDD = 45V
VDD = 50V
CAPACITANCE (pF)
VDD = 55V
6
4
2
0
Coss
1000
Crss
100
f = 1MHz
VGS = 0V
10
20
30
40
50
10
0.1
60
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
IAS, AVALANCHE CURRENT(A)
100
TJ = 25oC
10
TJ = 150oC
1
-3
10
-2
10
-1
100
PACKAGE MAY LIMIT

CURRENT IN THIS REGION
80
VGS=10V
60
VGS=8V
40
20
0
25
10
10
10
10
tAV, TIME IN AVALANCHE(ms)
10
Figure 9. Unclamped Inductive Switching

Capability
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
175
Figure 10. Maximum Continuous Drain Current vs

Ambient Temperature
5
500
10
P(PK), PEAK TRANSIENT POWER (W)
10us
100
10
Figure 8. Capacitance vs Drain to Source Voltage
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY RDS(ON)
10
100us
1ms
0.1
10ms
SINGLE PULSE
TJ=MAX RATED
Tc=25oC
DC
10
100 200
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
10
175 T c
----------------------150
I = I25
10
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
10
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area

FDP3651U Rev. C1
TC = 25oC
VGS = 10V
Figure 12. Single Pulse Maximum Power

Dissipation
4
NORMALIZED THERMAL
IMPEDANCE, ZJC
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
SINGLE PULSE
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJc x RJc + Tc
1E-3
-5
10
-4
-3
10
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
10
10
Figure 13. Transient Thermal Response Curve

FDP3651U Rev. C1
Mechanical Dimensions
TO-220 3L
Figure 14. TO-220, Molded, 3Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
Dimension in Millimeters
FDP3651U Rev. C1
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

FDP3651U Rev. C1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock
F-PFS
AccuPower
FRFET
AX-CAP*
*
SM
BitSiC
Global Power Resource
PowerTrench
GreenBridge
PowerXS
Build it Now
TinyBoost
Green FPS
Programmable Active Droop
CorePLUS
TinyBuck
Green FPS e-Series

QFET
CorePOWER
TinyCalc
QS
Gmax
CROSSVOLT
TinyLogic
GTO
Quiet Series
CTL
TINYOPTO
IntelliMAX
RapidConfigure
Current Transfer Logic
TinyPower
ISOPLANAR
DEUXPEED
TinyPWM
Dual Cool
Marking Small Speakers Sound Louder
TinyWire
EcoSPARK
Saving our world, 1mW/W/kW at a time
and Better
TranSiC
EfficentMax
SignalWise
MegaBuck
TriFault Detect
ESBC
SmartMax
MICROCOUPLER
TRUECURRENT*
SMART START
MicroFET
SerDes
Solutions for Your Success
MicroPak
SPM
MicroPak2
Fairchild
STEALTH
MillerDrive
Fairchild Semiconductor
UHC
SuperFET
MotionMax
FACT Quiet Series
Ultra FRFET
SuperSOT-3
mWSaver
FACT
UniFET
SuperSOT-6
OptoHiT
FAST
VCX
SuperSOT-8
OPTOLOGIC
FastvCore
VisualMax
OPTOPLANAR
SupreMOS
FETBench
VoltagePlus
SyncFET
FPS
XS

FDP3651U

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FDP3651U

N-Channel PowerTrench MOSFET

RDS(on) = 15 m ( Typ.) @ VGS = 10 V, ID = 80 A

High Performance Trench Technology for Extremely

Battery Protection Circuit

Low Miller Charge

Motor drives and Uninterruptible Power Supplies

UIS Capability (Single Pulse and Repetitive Pulse)

Micro Solar Inverter

MOSFET Maximum Ratings TC = 25C unless otherwise noted

Drain to Source Voltage

Gate to Source Voltage

Drain Current - Continuous

Single Pulsed Avalanche Energy

Operating and Storage Temperature

Maximum lead temperature soldering purposes,

Thermal Resistance , Junction to Ambient, Max.

Thermal Resistance , Junction to Case, Max.

Package Marking and Ordering Information

2006 Fairchild Semiconductor Corporation

FDP3651U N-Channel PowerTrench MOSFET

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

Gate to Source Threshold Voltage

VGS = VDS, ID = -250A

VGS = 10V , ID = 80A

VGS = 10V , ID = 40A

Reverse Transfer Capacitance

Total Gate Charge

Threshold Gate Charge

Gate to Source Gate Charge

Gate to Drain Charge

Resistive Switching Characteristics

Turn-On Delay Time

Turn-Off Delay Time

VDD = 50V, ID = 80A

Drain-Source Diode Characteristics

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

2006 Fairchild Semiconductor Corporation

FDP3651U N-Channel PowerTrench MOSFET

Electrical Characteristics TJ = 25C unless otherwise noted

PULSE DURATION = 80s

ID, DRAIN CURRENT (A)

RDS(on), ON-RESISTANCE (m)

PULSE DURATION = 80s

TJ, JUNCTION TEMPERATURE (oC)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance vs Junction

Figure 4. On-Resistance vs Gate to Source

ID, DRAIN CURRENT (A)

Figure 2. Normalized On-Resistance vs Drain

PULSE DURATION = 80s

PULSE DURATION = 80s

ID, DRAIN CURRENT(A)

Figure 1. On Region Characteristics

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward

FDP3651U N-Channel PowerTrench MOSFET

Typical Characteristics TC = 25C unless otherwise noted

VGS, GATE TO SOURCE VOLTAGE(V)