Unit III

Choose the letter of the best answer in each question.

1. Which of the following techniques can be used in the sinusoidal ac
analysis of transistor networks?

A) Small-signal

B) Large-signal

C) Small- or large-signal

D) None of the above

2. What is the limit of the efficiency defined by = P / P ?

o

A) Greater than 1

B) Less than 1

C) Always 1

D) None of the above

3. Which of the following define(s) the conversion efficiency?

A) Ac power to the load/ac input power

B) Ac power to the load/dc power supplied

C) Dc output power/ac input power

D) All of the above

4. Which of the following should be done to obtain the ac equivalent of a

network?

A) Set all dc sources to zero

B) Replace all capacitors by a short-circuit equivalent.

C) Remove all elements bypassed by the short-circuit equivalent.

D) All of the above

5. The _____ model suffers from being limited to a particular set of operating
conditions if it is to be considered accurate.

A) hybrid equivalent

B) r

C)

D) Thevenin

6. The _____ model fails to account for the output impedance level of the
device and the feedback effect from output to input.

A) hybrid equivalent

B) r

C)

D) Thevenin

7. Which of the following is (are) true regarding the input impedance for
frequencies in the midrange 100 kHz of a BJT transistor amplifier?

A) The input impedance is purely resistive.

B) It varies from a few ohms to mega ohms.

C) An ohmmeter cannot be used to measure the small-signal ac input

impedance.

D) All of the above

8. Which of the following is (are) true regarding the output impedance for
frequencies in the midrange 100 kHz of a BJT transistor amplifier?

A) The output impedance is purely resistive.

B) It varies from a few ohms to more than 2 M.

C) An ohmmeter cannot be used to measure the small-signal ac output

impedance.

D) All of the above

9. What is the range of the current gain for BJT transistor amplifiers?

A) less than 1

B) 1 to 100

C) above 100

D) All of the above

10. The input impedance of a BJT amplifier is purely _____ in nature and can
vary from a few _____ to _____.

A) resistive, ohms, megohms

B) capacitive, microfarads, farads

C) inductive, millihenrys, henrys

D) None of the above

11. For BJT amplifiers, the _____ gain typically ranges from a level just less
than 1 to a level that may exceed 1000.

A) voltage

B) current

C) impedance

D) All of the above

12. What is the unit of the parameter h ?

o

A) Volt

B) Ohm

C) Siemen

D) No unit

13. Which of the h-parameters corresponds to r in a common-base

configuration?
A) h
B) h
C) h
D) h
14. What is the range of the input impedance of a common-base
configuration?
e

ib

fb

rb

ob

A) A few ohms to a maximum of 50

B) 1 k to 5 k

C) 100 k to 500 k

D) 1 M to 2 M

15. What is the typical value of the current gain of a common-base

configuration?

A) Less than 1

B) Between 1 and 50

C) Between 100 and 200

D) Undefined

16. What is the controlling current in a common-base configuration?

A) I
B) I
C) I

e
c
b

D) None of the above

17. What is the typical range of the output impedance of a common-emitter

configuration?

A) 10 to 100

B) 1 k to 5 k

C) 40 k to 50 k

D) 500 k to 1 M

18. Under which of the following conditions is the output impedance of the
network approximately equal to R for a common-emitter fixed-bias
configuration?
A) r 10R
B) r < 10R
C) r < r
D) r > r
19. Under which of the following condition(s) is the current gain Av ?
A) r 10RC
B) R 10r
C) r 10R and R 10r
C

D) None of the above

20. What does the negative sign in the voltage gain of the common-emitter
fixed-bias configuration indicate?

A) The output and input voltages are 180 out of phase.

B) Gain is smaller than 1.

C) Gain is larger than 1.

D) None of the above

21. For the common-emitter fixed-bias configuration, there is a _____ phase

shift between the input and output signals.

A) 0

B) 45

C) 90

D) 180

22. Which of the following configurations has an output impedance Z equal

to R ?
o

A) Fixed-bias common-emitter

B) Common-emitter voltage-divider with bypass capacitor

C) Common-emitter voltage-divider without bypass capacitor

D) All of the above

23. Which of the following configurations has a voltage gain of R /r ?

C

A) Fixed-bias common-emitter

B) Common-emitter voltage-divider with bypass capacitor

C) Fixed-bias common-emitter and voltage-divider with bypass

capacitor

D) Common-emitter voltage-divider without bypass capacitor

24. Which of the following configurations has the lowest output impedance?

A) Fixed-bias

B) Voltage-divider

C) Emitter-follower

D) None of the above

25. The _____ configuration is frequently used for impedance matching.

A) fixed-bias

B) voltage-divider bias

C) emitter-follower

D) collector feedback

26. The emitter-follower configuration has a _____ impedance at the input

and a _____ impedance at the output.

A) low, low

B) low, high

C) high, low

D) high, high

27. Which of the following gains is less than 1 for a common-base

configuration?
A) A
B) A
C) A
i

D) None of the above

28. Which of the following conditions must be met to allow the use of the
approximate approach in a voltage-divider bias configuration?
A) r > 10R
e

 B) R > 10R2
C) R < 10R
D) r < 10R
29. Which one of the following configurations has the lowest input
impedance?
E

A) Fixed-bias

B) Common-base

C) Emitter-follower

D) Voltage-divider?

30. For the collector dc feedback configuration, there is a _____ phase shift
between the input and output signals.

A) 0

B) 45

C) 90

D) 180
31. Which of the following represent(s) the advantage(s) of the system
approach over the r-model approach?

A) Thevenin's theorem can be used.

B) The effect of changing the load can be determined by a simple

equation.

C) There is no need to go back to the ac equivalent model and analyze

the entire network.

D) All of the above

32. The loaded voltage gain of an amplifier is always more than the no-load
level.

A) True

B) False

33. The smaller the level of R , the larger the level of ac voltage gain.
L

A) True

B) False

34. Which of the following is (are) true to achieve a good overall voltage gain
for the circuit?
A) The effect of R and R must be considered as a product.
s

B) The effect of R and R must be considered as a product and

evaluated individually.
C) The effect of R and R must be evaluated individually.

D) None of the above

35. The _____ the source resistance and/or _____ the load resistance, the less
the overall gain of an amplifier.

A) smaller, smaller

B) smaller, larger

C) larger, smaller

D) larger, larger

36. The current gain for the Darlington connection is _____.

A) ( /2)
B)
C) /
D) 1 ( 1)
37. What is the voltage gain of a feedback pair connection?
1

A) 1

B) 1

C) 100

D) 100

38. Which of the following is referred to as the reverse transfer voltage ratio?
A) h
B) h
C) h
D) h
39. In an unbypassed emitter bias configuration h replaces _____ in the
r model.
A) r
i

r
f

ie

B)

C) r
D) I

Field Effect Transistor

1. Which of the following controls the level of I ?

D

A) V
B) V
C) I
D) V
2. Which of the following is (are) not an FET?
GS
DS

DG

A) n-channel

B) p-channel

C) p-n channel

D) n-channel and p-channel

3. What is the range of an FET's input impedance?

A) 10 to 1 k

B) 1 k to 10 k

C) 50 k to 100 k

D) 1 M to several hundred M

4. Which of the following transistor(s) has (have) depletion and enhancement

types?

A) BJT

B) JFET

C) MOSFET

D) None of the above

5. A BJT is a _____-controlled device. The JFET is a _____ - controlled device.

A) voltage, voltage

B) voltage, current

C) current, voltage

D) current, current

6. The BJT is a _____ device. The FET is a _____ device.

A) bipolar, bipolar

B) bipolar, unipolar

C) unipolar, bipolar

D) unipolar, unipolar

7. Which of the following is (are) the terminal(s) of a field-effect transistor

(FET).

A) Drain

B) Gate

C) Source

D) All of the above

8. What is the level of I in an FET?

G

A) Zero amperes

B) Equal to I
C) Depends on V

D) Undefined

9. At

DS

which of the following is the level of V equal to the pinch-off voltage?

A) When I becomes equal to I
B) When V is zero volts
C) I is zero
DS

DSS

GS

D) All of the above

10. At which of the following condition(s) is the depletion region uniform?

A) No bias

B) V > 0 V
C) V = V

D) None of the above

DS

DS

11. Refer to the following characteristic curve. Calculate the resistance of the
FET at V = 0.25 V if r = 10 k.
GS

A) 1.1378 k

B) 113.78

C) 11.378

D) 11.378 k

12. What is the level of drain current ID for gate-to-source voltages VGS less
than (more negative than) the pinch-off level?

A) zero amperes

B) I

C) Negative value

D) Undefined

DSS

13. The three terminals of the JFET are the _____, _____, and _____.

A) gate, collector, emitter

B) base, collector, emitter

C) gate, drain, source

D) gate, drain, emitter

14. The level of V that results in I = 0 mA is defined by V = _____.

A) V
B) V
C) V
GS

GS

GS(off)
P

DS

D) None of the above

15. The region to the left of the pinch-off locus is referred to as the _____
region.

A) saturation

B) cutoff

C) ohmic

D) All of the above

16. Which of the following represent(s) the cutoff region for an FET?

A) I = 0 mA
B) V = VP
C) I = 0

D) All of the above

GS

17. Referring to this transfer curve. Calculate (using Shockley's equation)

V at I = 4mA.
GS

A) 2.54 V

B) 2.54 V

C) 12 V

D) Undefined

18. Referring to this transfer curve, determine I at V = 2 V.

D

A) 0.444 mA

B) 1.333 mA

C) 0.111 mA

GS

D) 4.444 mA

19. What is the ratio of I / I

D

A) 0.25

B) 0.5

C) 1

D) 0

DSS

for V = 0.5 V ?
GS

20. The drain current will always be one-fourth of I

source voltage is _____ the pinch-off value.

A) one-fourth

B) one-half

C) three-fourths

D) None of the above

DSS

as long as the gate-to-

21. Which of the following ratings appear(s) in the specification sheet for an
FET?

A) Voltages between specific terminals

B) Current levels

C) Power dissipation

D) All of the above

22. Refer to this portion of a specification sheet. Determine the values of

reverse-gate-source voltage and gate current if the FET was forced to accept
it.

A) 25 Vdc, 200 nAdc

B) 25 Vdc, 10 mAdc

C) 6 Vdc, 1.0 nAdc

D) None of the above

23. Hand-held instruments are available to measure _____ for the BJT.

A)
B) I
C) V

D) All of the above

dc

DSS
P

24. How many terminals can a MOSFET have?

A) 2

B) 3

C) 4

D) 3 or 4

25. Which of the following applies to MOSFETs?

A) No direct electrical connection between the gate terminal and the

channel

B) Desirable high input impedance

C) Uses metal for the gate, drain, and source connections

D) All of the above

26. Referring to the following transfer curve, determine the level of V when
the drain current is 20 mA.
GS

A) 1.66 V

B) 1.66 V

C) 0.66 V

D) 0.66 V

27. Refer to the following curves. Calculate I at V = 1 V.

D

A) 8.167 mA

B) 4.167 mA

C) 6.167 mA

D) 0.616 mA

GS

28. It is the insulating layer of _____ in the MOSFET construction that

accounts for the very desirable high input impedance of the device.

A) SiO

B) GaAs

C) SiO

D) HCl

29. Refer to the following figure. Calculate V at I = 8 mA for k = 0.278 10

A/V .
GS

A) 3.70 V

B) 5.36 V

C) 7.36 V

D) 2.36 V

30. The transfer curve is not defined by Shockley's equation for the _____.

A) JFET

B) depletion-type MOSFET

C) enhancement-type MOSFET

D) BJT

31. Which of the following applies to a safe MOSFET handling?

A) Always pick up the transistor by the casing.

B) Power should always be off when network changes are made.

C) Always touch ground before handling the device.

D) All of the above

32. What is the purpose of adding two Zener diodes to the MOSFET in this
figure?

A) To reduce the input impedance

B) To protect the MOSFET for both polarities

C) To increase the input impedance

D) None of the above

33. Which of the following is (are) the advantage(s) of VMOS over MOSFETs?

A) Reduced channel resistance

B) Higher current and power ratings

C) Faster switching time

D) All of the above

34. Which of the following FETs has the lowest input impedance?

A) JFET

B) MOSFET depletion-type

C) MOSFET enhancement-type

D) None of the above

35. Which of the following input impedances is not valid for a JFET?

A) 10
B) 10
C) 10
D) 10

A) low

10
9
8
11

1. A field-effect transistor amplifier provides excellent voltage gain with the added
feature of a _____ input impedance.

B) medium

C) high

D) None of the above

2. The depletion MOSFET circuit has a _____ input impedance than a similar JFET
configuration.

A) much higher

B) much lower

C) lower

D) higher

3. The _____ is quite popular in digital circuits, especially in CMOS circuits that
require very low power consumption.

A) JFET

B) BJT

C) D-type MOSFET

D) E-type MOSFET

4. _____ is the amplification factor in FET transistor amplifiers.

A) Z
B) g
C) I
D) I
5. _____ is an undefined quantity in a JFET.

A) A
B) A
C) Z
D) Z
6. The _____ controls the _____ of an FET.

v
i

A) I , V
B) V , I
C) I , V
D) I , I
7. Transconductance is the ratio of changes in _____.

GS

GS

DS

A) I to V
B) I to V
C) V to I
D) V to V
D

GS

DS

GS

GS

DS

8. The transconductance g _____ as the Q-point moves from V to I

m

A) decreases

B) remains the same

C) increases

D) None of the above

DSS

9. g has its maximum value for a JFET at _____.

m

A) V
B) 0.5 V
C) 0.3 V
D) I
10. The value of gm is at its maximum g at VG equal to _____ and zero at V equal
to _____.

DSS

m0

GS

A) 0 V, V
B) V , 0 V
C) 0.5V , 0.3V
D) 0.3V , 0.5V
11. The range of input impedance Z for MOSFETs is _____.

A) 1 k 10 k

B) 100 k 1 M

C) 10 M 100 M

D) 10 to 10
12. The range of output admittance y for FETs is _____.

12

15

os

A) 5 S 10 S

B) 10 S 50 S

C) 50 S 100 S

D) 200 S 500 S

13. The _____ configuration has the distinct disadvantage of requiring two dc voltage
sources.

A) self-bias

B) voltage-divider

C) fixed-bias

D) All of the above

14. _____ is the network-input impedance for a JFET fixed-bias configuration.

A) R
B) R

C) Zero

D) None of the above

G
D

15. _____ is a required step in order to calculate Z .

o

A) Setting I equal to zero

B) Setting V equal to zero
C) Setting I equal to I

D) None of the above

DSS

16. _____ configuration(s) has (have) Z R .

o

A) Fixed-bias

B) Self-bias

C) Voltage-divider

D) All of the above

17. _____ is the only parameter that is different between voltage-divider and fixedbias configurations.
A) Z
B) A
C) Z
i

D) None of the above

18. The input and output signals are in phase in a _____ configuration.

A) fixed-bias

B) source-follower

C) voltage-divider

D) self-bias

19. A _____ configuration has a voltage gain less than 1.

A) fixed-bias

B) self-bias

C) source-follower

D) voltage-divider

20. The input and output signals are 180 out of phase in a _____ configuration.

A) source-follower

B) common-gate

C) common-drain

D) voltage-divider

21. The isolation between input and output circuits in the ac equivalent circuit is lost
in a _____ configuration.

A) common-gate

B) common-source

C) common-drain

D) None of the above

22. The _____ configuration has an input impedance, which is other than R .
G

A) common-source

B) common-gate

C) common-drain

D) None of the above

23. The gate-to-source voltage V of a(n) _____ must be larger than the threshold
V for the transistor to conduct.
GS

GS(Th)

A) JFET

B) D-type MOSFET

C) E-type MOSFET

D) None of the above

24. r changes from one operation region to another with _____ values typically
occurring at _____ levels of V (closer to zero).
d

GS

A) lower, lower

B) lower, higher

C) higher, lower

D) None of the above

25. The _____ does not support Shockley's equation.

A) JFET

B) D-type MOSFET

C) E-type MOSFET

D) None of the above