FQPF4N90C

TM
FQP4N90C/FQPF4N90C
900V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
4A, 900V, RDS(on) = 4.2 @VGS = 10 V

Low gate charge ( typical 17nC)
Low Crss ( typical 5.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
G!
G DS
TO-220
TO-220F
GD S
FQP Series
FQPF Series
Absolute Maximum Ratings

Symbol
VDSS
ID
TC = 25C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
FQP4N90C
FQPF4N90C
900
- Continuous (TC = 100C)
Units
V
4*
2.3
2.3 *
16 *
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)
(Note 1)
14
4.5
-55 to +150
mJ
V/ns
W
W/C
C
300
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
16
(Note 3)
- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
30
570
mJ
140
1.12
47
0.38
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case
RCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
C/W
RJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
C/W
2003 Fairchild Semiconductor Corporation
FQP4N90C
0.89
FQPF4N90C
2.66
Units
C/W
Rev. A, June 2003
FQP4N90C/FQPF4N90C
QFET
Symbol
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
900
--
--
--
1.05
--
V/C
VDS = 900 V, VGS = 0 V
--
--
10
VDS = 720 V, TC = 125C
--
--
100
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
--
3.5
4.2
--
--
--
740
960
pF
--
65
85
pF
--
5.6
7.3
pF
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
BVDSS
/
TJ
Breakdown Voltage Temperature

Coefficient
ID = 250 A, Referenced to 25C
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2 A
gFS
Forward Transconductance
VDS = 50 V, ID = 2 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 450 V, ID = 4 A,
RG = 25
(Note 4, 5)
VDS = 720 V, ID = 4 A,
VGS = 10 V
(Note 4, 5)
--
25
60
ns
--
50
110
ns
--
40
90
ns
--
35
80
ns
--
17
22
nC
--
4.5
--
nC
--
7.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
--
--
16
VSD
Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 4 A
Drain-Source Diode Forward Voltage
--
--
1.4
trr
Reverse Recovery Time
--
450
--
ns
Qrr
Reverse Recovery Charge
--
3.5
--
VGS = 0 V, IS = 4 A,
dIF / dt = 100 A/s
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 67 mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
Rev. A, June 2003
FQP4N90C/FQPF4N90C
Electrical Characteristics
FQP4N90C/FQPF4N90C
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
10
10
10
-1
10
150 C
0
10
-55 C
25 C
Notes :
1. 250 s Pulse Test
2. TC = 25
Notes :
1. VDS = 50V
2. 250 s Pulse Test
-2
-1
10
-1
10
10
10
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
1
10
IDR , Reverse Drain Current [A]
RDS(ON) [ ],
Drain-Source On-Resistance
VGS = 10V
6
VGS = 20V
2
Note : TJ = 25
10
150
Notes :
1. VGS = 0V
2. 250 s Pulse Test
25
-1
10
0.2
0.4
0.6
Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage
1.0
1.2
1.4
Figure 4. Body Diode Forward Voltage

Variation with Source Current
and Temperature
12
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
800
600
Coss
Notes ;
1. VGS = 0 V
2. f = 1 MHz
400
200
Crss
VDS = 180V
10
VGS , Gate-Source Voltage [V]
1000
Capacitance [pF]
0.8
VSD, Source-Drain voltage [V]
VDS = 450V
VDS = 720V
2
Note : ID = 4A
0
-1
10
10
10
Figure 5. Capacitance Characteristics
0
0
10
15
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, June 2003
FQP4N90C/FQPF4N90C
(Continued)
3.0
1.2
2.5
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
150
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 2.0 A
0.5
0.0
-100
200
-50
150
200
Figure 8. On-Resistance Variation

vs Temperature
Figure 7. Breakdown Voltage Variation

vs Temperature
10
10
Operation in This Area

is Limited by R DS(on)
Operation in This Area

is Limited by R DS(on)
100 s
1 ms
10 ms
100 ms
DC
10
Notes :
-1
10
10 s
100 s
10
10
100
o
TJ, Junction Temperature [ C]
1 ms
10 ms
100 ms
10
DC
Notes :
-1
10
1. TC = 25 C
1. TC = 25 C
2. TJ = 150 C
3. Single Pulse
2. TJ = 150 C
3. Single Pulse
-2
-2
10
50
TJ, Junction Temperature [ C]
10
0
10
10
10
10
10
10
10
10
Figure 9-1. Maximum Safe Operating Area

for FQP4N90C
Figure 9-2. Maximum Safe Operating Area

for FQPF4N90C
0
25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current

vs Case Temperature
Rev. A, June 2003
(Continued)
10
(t), T h e rm a l R e s p o n s e
FQP4N90C/FQPF4N90C
D = 0 .5
0 .2
10
-1
N o te s :
1 . Z J C( t ) = 0 . 8 9 / W M a x .
2 . D u t y F a c t o r , D = t1 / t 2
3 . T J M - T C = P D M * Z J C( t )
0 .1
0 .0 5
0 .0 2
PDM
JC
0 .0 1
s in g le p u ls e
10
t1
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
10
D = 0 .5
0 .2
N o te s :
1 . Z J C ( t ) = 2 .6 6 / W M a x .
2 . D u t y F a c to r , D = t 1 / t 2
3 . T J M - T C = P D M * Z JC( t )
0 .1
0 .0 5
10
-1
0 .0 2
PDM
0 .0 1
t1
JC
( t) , T h e r m a l R e s p o n s e
Figure 11-1. Transient Thermal Response Curve for FQP4N90C
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF4N90C
Rev. A, June 2003
FQP4N90C/FQPF4N90C
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50K
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
ID (t)
VDS (t)
VDD
tp
Time
Rev. A, June 2003
FQP4N90C/FQPF4N90C
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Rev. A, June 2003
TO-220
4.50 0.20
2.80 0.10
(3.00)
+0.10
1.30 0.05
18.95MAX.
(3.70)
3.60 0.10
15.90 0.20
1.30 0.10
(8.70)
(1.46)
9.20 0.20
(1.70)
9.90 0.20
1.52 0.10
0.80 0.10
2.54TYP
[2.54 0.20]
10.08 0.30
(1.00)
13.08 0.20
(45
1.27 0.10
+0.10
0.50 0.05
2.40 0.20
2.54TYP
[2.54 0.20]
10.00 0.20
Dimensions in Millimeters
Rev. A, June 2003
FQP4N90C/FQPF4N90C
Package Dimensions
(Continued)
3.30 0.10
TO-220F
10.16 0.20
2.54 0.20
3.18 0.10
(7.00)
(1.00x45)
15.87 0.20
15.80 0.20
6.68 0.20
(0.70)
0.80 0.10
)
0
(3
9.75 0.30
MAX1.47
#1
+0.10
0.50 0.05
2.54TYP
[2.54 0.20]
2.76 0.20
2.54TYP
[2.54 0.20]
9.40 0.20
4.70 0.20
0.35 0.10
Dimensions in Millimeters
Rev. A, June 2003
FQP4N90C/FQPF4N90C
Package Dimensions
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
FACT
ActiveArray
FACT Quiet Series
Bottomless
FAST
CoolFET
FASTr
CROSSVOLT FRFET
DOME
GlobalOptoisolator
EcoSPARK
GTO
E2CMOSTM
HiSeC
EnSignaTM
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop
ImpliedDisconnect PACMAN
POP
ISOPLANAR
Power247
LittleFET
PowerTrench
MicroFET
QFET
MicroPak
QS
MICROWIRE
QT Optoelectronics
MSX
Quiet Series
MSXPro
RapidConfigure
OCX
RapidConnect
OCXPro
SILENT SWITCHER
OPTOLOGIC
SMART START
OPTOPLANAR
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I3

FQPF4N90C

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

FQPF4N90C

Uploaded by

Copyright:

Available Formats

TM

These N-Channel enhancement mode power field effect

4A, 900V, RDS(on) = 4.2 @VGS = 10 V

Absolute Maximum Ratings

TC = 25C unless otherwise noted

- Continuous (TC = 100C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

- Derate above 25C

* Drain current limited by maximum junction temperature.

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

2003 Fairchild Semiconductor Corporation

Rev. A, June 2003

TC = 25C unless otherwise noted

VDS = 900 V, VGS = 0 V

VDS = 720 V, TC = 125C

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = 250 A, Referenced to 25C

Zero Gate Voltage Drain Current

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Reverse Recovery Time

Reverse Recovery Charge

2003 Fairchild Semiconductor Corporation

Rev. A, June 2003

ID, Drain Current [A]

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

IDR , Reverse Drain Current [A]

ID, Drain Current [A]

Figure 3. On-Resistance Variation vs

Figure 4. Body Diode Forward Voltage

VGS , Gate-Source Voltage [V]

VSD, Source-Drain voltage [V]

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

2003 Fairchild Semiconductor Corporation

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

Rev. A, June 2003

Figure 8. On-Resistance Variation

Figure 7. Breakdown Voltage Variation

Operation in This Area

Operation in This Area

ID, Drain Current [A]

ID, Drain Current [A]

TJ, Junction Temperature [ C]