UNIT 2.

JUNCTION DIODE
Q1 The forward region of a semiconductor diode characteristics curve is where diode
appears as
a.
b.
c.
d.

A capacitor
An ON switch
An OFF switch
High resistance

Q2. For germanium P-N junction, the barrier potential is nearly

a.
b.
c.
d.

0.15 V
0.3 V
0.45 V
0.6 V

Q3. For silicon P-N junction, the barrier potential is about

a.
b.
c.
d.

0.7 V
0.8 V
0.9 V
1.0 V

Q4. At a P-N junction the potential barrier is due to the charges on either side of the
junction , these charges are
a.
b.
c.
d.

Minority carrier
Majority carrier
Both
Fixed donor and acceptor ions

Q5. A general purpose diode is more likely to suffer avalanche breakdown rather than
zener breakdown because
a.
b.
c.
d.

It is lightly doped
It has low reverse resistance
Its leakage current is small
It has strong covalent bonds

Q6. A reverse-biased P-N junction has

a.
b.
c.
d.

Almost zero current

A net electron current
A net hole current
A very narrow depletion layer

Q7. With increases of reverse bias, the reverse saturation current in P-N diode
a.
b.
c.
d.

Increases
Remains constant
Is decreases
First increases and then decreases

Q8. Depletion region width decreases with

a.
b.
c.
d.

Increases of doping
Increases of reverse bias potential
Independent of doping
Decreases of doping

Q9. The depletion layer of a P-N junction diode has

a.
b.
c.
d.

Only free mobile holes

Only free mobile electrons
Both free mobile holes as well as electrons\
Neither free mobile electrons nor holes

Q10. When the temperature of a P-N junction rises _______ will increases
a.
b.
c.
d.

Reverse leakage current

Width of depletion layer
Junction barrier voltage
All of the above

Q11. The reverse resistance of a P-N junction diode is given by

a.
b.
c.
d.

Forward voltage/reverse leakage current

Breakdown voltage/reverse leakage current
Either of the above
None of the above

Q12. Application of forward bias to a junction diode

a. Reduces forward current
b. Reduces minority carrier current

c. Reduces potential barrier height

d. All of the above
Q13. The transition capacitance increases with
a.
b.
c.
d.

Decreases of reverse bias voltage

Increases of reverse saturation current
Decreases of reverse saturation current
Increases of forward bias voltage

Q14. In a forward biased diode

a.
b.
c.
d.

Only drift current flows

Only diffusion current flows
Both currents flows in opposite direction
Diffusion current is greater than drift current in opposite direction

Q15. The current in reverse bias, in a P-N junction diode is correct

a.
b.
c.
d.

Few micro or nano ampere

Few milli ampere
Between 0.2 A and 2 A
None of the above

Q16. Barrier potential in a PN junction is caused by

a.
b.
c.
d.

Flow of drift current

Diffusion of majority carrier across the junction
Migration of minority carrier across the junction
Thermally generated electrons and holes

Q17. A reverse biased PN junction has

a.
b.
c.
d.

Almost zero current

A very narrow depletion layer
A net hole current
A net electron current

Q18. For a PN diode, the number of minority carrier crossing the junction mainly
depends on
a.
b.
c.
d.

Potential barrier
Forward bias voltage
Rate of thermal generation of electron holes pairs
None of the above

Q19. A PN junction is formed in a process which may be of

a.
b.
c.
d.

Diffused type
Alloyed type
The grown type
Any of the above

Q20. In a P-N junction with no external voltage, the electric field between acceptor and
donor ions is called a
a.
b.
c.
d.

Path
Barrier
Threshold
Peak

The forward region of a semiconductor diode characteristics curve is where diode appears
as
e.
f.
g.
h.

A capacitor
An ON switch
An OFF switch
High resistance

ANSWER
1.(b) 2.(b) 3.(a) 4.(d) 5.(a) 6.(a)
7.(b) 8.(a) 9.(d) 10.(a) 11.(b) 12.(c)
13.(a) 14.(d) 15.(a) 16.(b) 17.(a) 18.(c)
19.(d) 20.(b)

UNIT 3. TRANSISTOR
Q1. A PNP transistor, base will be of
a.
b.
c.
d.

P material
N material
Either of the above
None of the above

Q2. In a transistor largest dimension is that of

a.
b.
c.
d.

Emitter
Base
Collector
None of the above

Q3. In transistors symbol, slant line to the bar with arrow head represents
a.
b.
c.
d.

Emitter
Base
Collector
None of the above

Q4. In a Transistor highly doped part is

a.
b.
c.
d.

Emitter
Base
Collector
None of the above

Q5. In a transistor lightly doped part is

a. Emitter

b. Base
c. Collector
d. None of the above
Q6. In a transistor symbol, slant line to bar without any arrow head represents
a.
b.
c.
d.

Emitter
Base
Collector
None of the above

Q7. A dot near the transistor pin denotes

a.
b.
c.
d.

Emitter
Base
Collector
None of the above

Q8. In a transistor symbol, if slant line arrow head is drawn towards the bar, then the
transistor is
a.
b.
c.
d.

PNP
NPN
Either of the above
None of the above

Q9. A notch or a tab on transistor cap denotes

a.
b.
c.
d.

Emitter pin
Base pin
Collector pin
None of the above

Q10. Resistance across which of the following two pairs of transistor be nearly equal?
a.
b.
c.
d.

Emitter base, emitter collector

Emitter base, base collector
Base collector, collector emitter
None of the above

Q11. Which of the following is valid for both P-N-P as well as N-P-N transistors?

a.
b.
c.
d.

The emitter injects holes into the base region

The electrons are the minority carriers in the base
The EB junction is forward active operation
When biased in the active region, current flows into emitter terminal

Q12. In transistor with normal bias

a.
b.
c.
d.

The emitter junction offers high resistance

The emitter junction is reverse biased
The emitter junction has a low resistance
None of the above

Q13. Which region of a transistor is lightly doped

a.
b.
c.
d.

Collector
Base
Emitter
All region are equally doped

Q14. Current flows through a bipolar transistor is by means of

a.
b.
c.
d.

Electrons
Holes
Both electrons and holes
None of the above

Q15. Transistor works as an open switch when junction is _____ biased and collector
junction is_____ biased
a.
b.
c.
d.

Forward, reverse
Reverse, reverse
Reverse, forward
Forward, forward

Q16. Transistor works on closed switch emitter junction is_____ biased and collector
junction ______biased
a.
b.
c.
d.

Forward, reverse
Reverse, reverse
Reverse, forward
Forward, forward

Q17. Transistor works as a variable rheostat when emitter junction is _____ biased and
collector junction is biased
a.
b.
c.
d.

Forward, reverse
Reverse, reverse
Reverse, forward
Forward, forward

Q18. A P-N-P transistor has

a. Only acceptor ions
b. Only donor ions
c. Two P-regions and one N-regions
Q19. Majority carrier emitted by the emitter
a.
b.
c.
d.

Mostly recombine in base region

Mostly pass through the base region
Are stopped by the collector junction barrier
Recombine in the collector region

Q20. Current base part of transistor behaves like

a.
b.
c.
d.

Constant current course

Forward biased diode
A resistance
None of the above

ANSWER
1.(b) 2.(c) 3.(a) 4.(a) 5.(b) 6.(c)
7.(c) 8.(a) 9.(a) 10.(b) 11.(c) 12.(c)
13.(b) 14.(c) 15.(b) 16.(d) 17.(a) 18.(c)
19.(b) 20.(a)

COMPLETE 15/12/10

UNIT 4. JFET AND MOSFET

Q1. For the operation of enhancement only N channel MOSFET value of gate voltage has
to be
a.
b.
c.
d.

Zero
Low positive
High positive
High negative

Q2. A JFET can operate in

a.
b.
c.
d.

Depletion mode only

Enhancement mode only
Depletion and enhancement modes
Neither enhancement nor depletion mode

Q3. In a JFET _____ is usually the point of reference

a.
b.
c.
d.

Gate
Drain
Source
Either (b) or (c)

Q4. The primary control on drain current in a JFET is exerted by which of the following?
a.
b.
c.
d.

Gate reveres bias

Channel drop across channel
Voltage drop across channel
Size of depletion regions

Q5. FETs have similar properties to

a.
b.
c.
d.

A thermionic valves
Unijunction transistors
P-N-P transistors
N-P-N transistors

Q6. Which of the following statements is correct regarding a JFET operating above
pinch-off voltage?

a.
b.
c.
d.

The depletion regions become smaller

The drain current starts decreases
The drain current remains practically constant
The drain current increases steeply

Q7. A FET can be used as a variable

a.
b.
c.
d.

Inductor
Capacitor
Resistor
Voltage source

Q8. In FET the drain voltage above which there are no increases in the drain current is
called_____ voltage
a.
b.
c.
d.

Pick off
Pinch off
Breakdown
Critical

Q9. The operation of a JFET involves a flow of

a.
b.
c.
d.

Minority carrier
Majority carrier
Recombination carrier
Any of the above

Q10. When the positive voltage on the gate of a P-channel JFET is increased, the drain
current will
a.
b.
c.
d.

Increase
Decrease
Remain same
Any of the above

Q11. For the operation of enhancement only N channel MOSFET value of gate voltage
has to be
a)Zero
b)Low positive
c)High positive
d)High negative

A FET differs from a bipolar transistor as it has

a.
b.
c.
d.

Simpler fabrication
Negative resistance
High input impedance
Any of the above

Q12. A FET, for its operation depends on the variation of

a.
b.
c.
d.

Forward-biased junction
Reverse-biased junction
Magnetic field
The depletion-layer width with reverse voltage

Q13. N-channel FETs are superior to P-channel FETs because

a.
b.
c.
d.

They have a higher switching time

They have a higher input impedance
Mobility of electron is greater then that of holes
All of the above

Q14. _____ is the best electronics devices for fast switches

a.
b.
c.
d.

MOSFET
JFET
BJT
Triode

Q15. A FET differs from a bipolar transistor as it has

e.
f.
g.
h.

Simpler fabrication
Negative resistance
High input impedance
Any of the above

Q16. The input gate current of a FET is

a.
b.
c.
d.

A few amperes
A few milli amperes
A few micro amperes
Negligibly small

Q17. The depletion MOSFET is

a.
b.
c.
d.

Useful as a very good constant voltage source

Normally on MOSFET
Widely used because of easy in its fabrication
Normally off MOSFET

Q18. The operation of a JFET involves

a.
b.
c.
d.

A flow of minority carrier

Negative resistance
Recombination
Drain resistance

Q19. Which of the following is not the main characteristic of a FET?

a.
b.
c.
d.

Amplification factor
Forward transconductance
Temperature factor
Drain resistance

Q20. The FETs are also known as

a.
b.
c.
d.

Linear device
Square root law devices
Cube law devices
Square law devices

ANSWER
1.(c) 2.(a) 3.(c) 4.(a) 5.(a) 6.(c)
7.(c) 8.(b) 9.(b) 10.(b) 11.(d) 12.(d)
13.(c) 14.(a) 15.(c) 16.(d) 17.(b) 18.(d)
19.(c) 20.(d)

COMPLETE 16/12/10

UNIT 5. SMALL SIGNAL AMPLIFIERS

Q1. Emitter follower is a negative feedback amplifiers using feedback as
a.
b.
c.
d.

Current shunt
Voltage series
Current series
Voltage shunt

Q2. The power gain of emitter follower is usually

a.
b.
c.
d.

Equal to one
Less than one
More than one
Depends on component value

Q3. A DC amplifiers amplifies

a.
b.
c.
d.

DC only
AC only
Both
None of the above

Q4. Linear transistor circuits always operate in

a.
b.
c.
d.

Passive region
Cut off region
Active region
Saturation region

Q5. The disadvantages of FET over BJT is its

a.
b.
c.
d.

Low value of voltage gain

Low power handling ability
Poor high frequency performance
All of the above

Q6. In amplifiers the main source of harmonic distortion is

a.
b.
c.
d.

Positive feedback
Noisy transformer
Defective resistors
Non-linearity in active device

Q7. The current gain of emitter follower is

a.
b.
c.
d.

1+
1-
1+

Q8. A public address system (amplifier)

a.
b.
c.
d.

does not use emitter resistance

uses bypassed emitter resistor
uses unbiased emitter resistor
none of the above

Q9. In a Darlington pair

a.
b.
c.
d.

the emitter of first transistor drives the base of the second

emitter of the two transistors are connected through a resistor
the base of the first transistor drives the emitter of the second
none of the above

Q10. In a RC coupled amplifier the component producing distortion is

a.
b.
c.
d.

power supply
capacitor
resistor
transistor itself

Q11. Which capacitor is preferred for coupling on a RC coupled amplifiers using diodes?
a.
b.
c.
d.

Paper
Electrolytic
Mica
Any of the above

Q12. Which the following statement is incorrect regarding differential amplifier?

a. It has the ability to amplify the difference between two signals
b. It is used to eliminate noise packed up along a short transmission line

c. It is not much used in ICs

d. Its output is taken from the collectors of the two transistor
Q13. Cascaded amplifiers which find wide use in integrated circuits are
a.
b.
c.
d.

Capacitive coupled
Inductively coupled
Transformer coupled
Direct coupled

Q14. Emitter follower is

a.
b.
c.
d.

Current series
Voltage series
Current shunt
Voltage shunt

Q15. The high and low frequency response of an RC coupled circuit can be increased by
a.
b.
c.
d.

Increasing load resistance

Increasing coupling capacitance
Decreasing load resistance
Decreasing coupling capacitance

Q16. Which of the following will be preferred for high gain?

a.
b.
c.
d.

Cascode amplifier
Push pull amplifier
Darlington amplifier
Cascade amplifier

Q17. The most popular bias is ______bias

a.
b.
c.
d.

Emitter
Self
Fixed
Collector to base feedback

Q18. A differential amplifier is said to be excellent when

a.
b.
c.
d.

High CMRR
Common mode gain is low
Differential gain is high
All of the above

Q19. Source follower is a negative feedback amplifier using feedback as

a.
b.
c.
d.

current shunt
voltage shunt
current series
voltage series

Q20. The coupling capacitor is known as

a.
b.
c.
d.

Passing capacitor
Blocking capacitor
Bypass capacitor
None of the above

ANSWER
1.(b) 2.(c) 3.(c) 4.(c) 5.(d) 6.(d)
7.(c) 8.(b) 9.(a) 10.(d) 11.(a) 12.(c)
13.(d) 14.(b) 15.(c) 16.(d) 17.(b) 18.(d)
19.(d) 20.(b)