COMPLETE 15/12/10

ONLINE TEST PAPER

E.D.C
SEMICONDUCTOR PHYSICS (Unit-1)
1. At room temp. the current in an intrinsic semiconductor is due to
a. holes b. electrons c. ions d. holes and electrons
2. An electron with velocity v is placed in an electric field E and magnetic field B.
The force experienced by the electron is given by
a. -eE
b.-eExB
c. e(VxE +B)
d.-e[E+ (VxB)]
3. Which of the following is true with regard to photo emission
a. velocity of emitted electrons is dependent on light intensity.
b. rate of photoemission is inversely proportional to light intensity
c.max.velocity of electrons increases with decreasing wavelength
d. both electrons and holes are produced
4. If the drift velocity of the holes under a field gradient of 100V/m is 5m/s their
mobility in si unit is
a. 0.05 m2/V-s. b. 0.5 m2/V-s. c. 0.05 cm2/V-s. d. 500 m2/V-s.
5. The conductivity of a semiconductor crystal due to any current carrier is not
proportional to
a. mobility of the carrier
b. Conductivity density of the states in the conduction band
c. Electronic Charge
d. Surface state in semiconductor
6. A resistance thermometer has a temp. Coefficient of resistance 10-3 per degree
and its resistance at 0OC is 1 . At what temp. its resistance is 1.1?
a. 100 C
b 1000 C
c. 1200
d. -100 C
7. A semiconductor specimen of breadth d, width w and carrying current I is placed
in a mag. Field B to develop hall effect voltage VH in a direction perpendicular to
a. B
b. I
c. W-1
d. d-1
8. A copper wire is 1m long and has uniform cross section of 0.1mm. The resistance
of the wire at room temp. is 0.171. what is the resistivity of the material
a.1.71x10-6m b. 1.71x10-7m c. 1.71x10-8m
d. 1.71x10-9m
9. The carrier mobility in a semiconductor is 0.4m2 /v-s. Its diffusion constant at
300k will be
a. 0.43
b. 0.16
c. 0.04
d. 0.01

10. In a piezocrystal, application of mechanical stress would produce

a.
plastic deformation of the crystal
b.
magnetic dipoles in the crystal
c.
electrical polarization in the crystal
d.
shift in the Fermi level
11. Given that the band gap of cadmium supplied is 2.5eV, the max. photon wave
length for electron hole pair generation will be
a. 5400 m b. 540m
c. 5400 A0
d. 540 A0
12. The unit of q/kt is
a. V b. V-1 c. J

d J/ 0K

13. The band gap of te silicon at 3000 k is

a. 1.36 eV
b. 1.10 eV
c. 0.8eV

d. 10.67 eV

14. The impurity commonly used for realizing the base region of silicon n-p-n
transistor is
a. Galium
b. Indium
c. Boron
d. Phosphorous
15. The resistivity of a uniformly doped n-type silicon sample is 0.5-cm. if the
electron mobility is 1250cm2 /v-s the donar impurity conc. Is
a. 2x1016 cm3 b. 1x1016 cm-3 c. 2.5x1016 cm-3 d. 2x1015 cm-3
16. The longest wavelength that can be absorbed by the silicon, which has band gap
of 1.2ev, is 1.1 micron. If the longest wavelength that can be absorbed by another
material is 0.87micron, then the band gap of this material is
a. 1.416 eV b. 10.888eV c. 0.854eV
d. 0.706 eV
17. A silicon sample A is doped with 108 atoms/cm3 of boron. Another sample of
identical dimensions is doped with 1018 atoms/cm3 of phosphorus. The ratio of
electron to hole mobility is 3. The ratio of conductivity of the sample A to B is
a. 3
b. 3-1
c. 2/3
d. 3/2
18. The conc. Of minority carriers in extrinsic semiconductor under equilibrium is
a. Directly proportional to doping concentration
b. Inversely proportional to doping concentration
c. Directly proportional to the intrinsic concentration
d. Inversely proportional to the intrinsic concentration
19. Under low level injection assumption, the injected minority carrier current for an
extrinsic semiconductor is essentially the
a. Diffusion Current
b. Drift Current
c. Recombination Current

d. Induced Current
20. In switching diode fabrication a do pant is introduced into silicon which
introduces additional trap levels in the material there by reducing the mean life
time of carriers. This do pant is
a. Al
b. Pt
c. Au
d. Cu
Answers:
1) d
2) d
3) c
4) a
5) d
6) b
7) d
8) c
9) d
10) c
11) c
12) b
13) b
14) c
15) b
16) a
17) b
18) b
19) a
20) c