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School of Physics and Astronomy and Monash Centre for Atomically Thin Materials, Monash University, Victoria 3800, Australia
Department of Physics and Centre for Advanced 2D Materials, National University of Singapore, 117551, Singapore
S Supporting Information
*
DOI: 10.1021/acs.nanolett.6b00638
Nano Lett. XXXX, XXX, XXXXXX
Letter
Nano Letters
Figure 1. Structure of Na3Bi thin lms. All data correspond to 20 nm thick Na3Bi grown at 345 C on -Al2O3[0001]. (a) Schematic representation
of device geometry showing location of Ti/Au pads used to make electrical contact to the Na3Bi lm grown on sapphire. The inset shows the crystal
structure of Na3Bi with the in-plane and c-axis lattice constants labeled, where Na and Bi atoms are colored green and purple, respectively. (b) Largescale STM image showing the morphology of Na3Bi with step height 4.7 (Vbias = 1 V, I = 100 pA, T = 5 K). Inset: Atomic-resolution STM image
of surface with lattice constant 5.45 (Vbias = 500 mV, I = 200 pA, T = 5 K). (c) LEED image taken at 17.5 eV showing the 1 1 symmetry of the
Na3Bi surface. (d) Scanning tunneling spectrum dI/dV vs V averaged over 20 nm 20 nm area. (Bias modulation rms amplitude is 5 mV). The bias
voltage position of minimum dI/dV is labeled ED = 35 mV and identied as the Dirac point energy.
sample. The sharp dip near zero energy reects the dip in
LDOS at the Dirac point,4,15 with Dirac point energy ED = 35
meV, consistent with the n-type doping we measured via
transport. We can use this value in conjunction with carrier
density measured via transport (see below, 3.8 1018 cm3)
to estimate the average Fermi velocity in our samples, F = 1.4
105 m/s, in reasonable agreement with the value 2.4 105
m/s obtained from ARPES.2
The ex situ prepared corner contacts (Figure 1a) allowed us
to make van der Pauw measurements of the longitudinal and
transverse resistivity xx and xy in magnetic eld B up to 0.5 T
at a temperature of 5 K, from which we extract the Hall carrier
dxy
( )
density n = ed dB
DOI: 10.1021/acs.nanolett.6b00638
Nano Lett. XXXX, XXX, XXXXXX
Letter
Nano Letters
Figure 2. Hall mobility and Hall carrier density of Na3Bi thin lms
measured at a temperature of 5 K for samples grown with dierent
thermal proles. (a) Mobility and (b) Hall carrier density (n-type) are
plotted against the nal growth temperature for the various samples.
The 120345 C growth prole achieves the highest measured
mobility (6310 cm2/vs) and lowest carrier density (4.6 1017 cm3).
The gray shaded region represents the range of nal growth
temperatures for which the sample quality signicantly degrades. c)
Loglog plot of experimental mobility vs carrier density (black
squares). The red hashed region was calculated using eq 18 in ref 16
for best estimates of the eective ne structure constant = 0.06
0.17. The green dashed line is a t to the experimental data yielding an
eective ne structure constant = 0.44.
6 2n
g
1/3
( )
(1)
DOI: 10.1021/acs.nanolett.6b00638
Nano Lett. XXXX, XXX, XXXXXX
Letter
Nano Letters
Figure 3. Transverse magnetoresistance (0.5 T) of Na3Bi thin lms at a temperature of 5 K. (a) Normalized magnetoresistance xx(B)/xx(B = 0)
as a function of B for samples prepared at nal growth temperatures indicated in the legend. 345* no ux indicates growth without the postgrowth
anneal in Na ux. Lines are ts to eq 1. (b) Quadratic coecient of MR A from ts to eq 1 in (a) as a function of carrier density for the various lms
measured. (c) Residual magnetoconductance = (B) (B = 0) vs B after subtraction of t to eq 1 from data in (a). Fits are to the strong spin
orbit limit of the HLN theory (eq 2).29 The single tting parameter, the coherence length L, is plotted against carrier density in (d). The colors of
the points in (b) and (d) correspond to the sample growth temperatures indicated by the legend in (a).
the samples (20 nm), consistent with the assumption of twodimensionality. (Eorts to t our data using a threedimensional theory for weak localization30,31 yielded poor ts
regardless of the limiting cases in temperature and magnetic
eld used.)
The coherence length L at densities above 6 1018 cm3
exceeds 1 m but is suppressed in lower carrier density
samples, a phenomena that has been previously observed in
other Dirac materials such as graphene32 and the Dirac surface
state of bismuth selenide.33 The fact that our weak eld MR is
well-described by the HLN formula indicates that our Na3Bi
lms are well-described by noninteracting Dirac cones; i.e.,
intervalley scattering is weak.31 However, more careful study of
the MR, including temperature and (electrostatically controlled) carrier density dependence, is necessary to make a
quantitative assessment of the intervalley scattering rate, as well
as any role of spinorbit disorder.34
In summary, we have demonstrated the growth of electrically
isolated, highly oriented, large area thin lm Na3Bi on Al2O3[0001] substrates. The high sample quality is reected in
a record high mobility and near-ideal weak antilocalization
behavior. High-quality TDS thin lms on insulators open a
route toward novel topological phenomena and devices,
including electric eld control via gate electrodes, and
interfacing with magnetic or superconducting materials.
1
B
e 2 B
ln +
2
2h B
B
(2)
h
8eB
as a
DOI: 10.1021/acs.nanolett.6b00638
Nano Lett. XXXX, XXX, XXXXXX
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Nano Letters
ASSOCIATED CONTENT
* Supporting Information
S
AUTHOR INFORMATION
Corresponding Author
*E-mail: mark.edmonds@monash.edu.
Author Contributions
ACKNOWLEDGMENTS
This work was performed in part at the Melbourne Centre for
Nanofabrication (MCN) in the Victorian Node of the
Australian National Fabrication Facility (ANFF). LEED
measurements were performed at the Soft X-ray Beamline of
the Australian Synchrotron. J.H., M.T.E., B.W., and M.S.F. are
supported by M.S.F.s ARC Laureate fellowship
(FL120100038). M.T.E. and B.W. garner additional support
from their respective ARC DECRA fellowships (DE160101157
and DE160101334). S.A. and N.R. are supported under the
National Research Foundation of Singapores fellowship
program (NRF-NRFF2012-01).
REFERENCES
(1) Wang, Z.; et al. Phys. Rev. B: Condens. Matter Mater. Phys. 2012,
85, 195320.
(2) Liu, Z. K.; et al. Science 2014, 343, 864867.
(3) Xiong, J.; et al. Science 2015, 350, 413416.
(4) Kushwaha, S. K.; et al. APL Mater. 2015, 3, 041504.
(5) Xiong, J. et al. arXiv:1502.06266, 2015.
(6) Goswami, P.; Pixley, J. H.; Das Sarma, S. Phys. Rev. B: Condens.
Matter Mater. Phys. 2015, 92, 075205.
(7) Xiao, X.; Yang, S. A.; Liu, Z.; Li, H.; Zhou, G. Sci. Rep. 2015, 5,
7898.
(8) Pan, H.; Wu, M.; Liu, Y.; Yang, S. A. Sci. Rep. 2015, 5, 14639.
(9) Potter, A. C.; Kimchi, I.; Vishwanath, A. Nat. Commun. 2014, 5,
5161.
(10) Wang, H.; et al. Nat. Mater. 2015, 15, 3842.
(11) Zhang, Y.; et al. Appl. Phys. Lett. 2014, 105, 031901.
(12) Wen, J.; et al. Appl. Surf. Sci. 2015, 327, 213217.
(13) Bansal, N.; et al. Thin Solid Films 2011, 520, 224229.
(14) Hellerstedt, J.; et al. Appl. Phys. Lett. 2014, 105, 173506.
(15) Xue, J.; et al. Nat. Mater. 2011, 10, 282285.
(16) Das Sarma, S.; Hwang, E. H.; Min, H. Phys. Rev. B: Condens.
Matter Mater. Phys. 2015, 91, 035201.
(17) Drew, H. D.; Jenkins, G. S. Private Correspondence, 2015.
(18) Ping, J.; et al. Phys. Rev. Lett. 2014, 113, 047206.
(19) Hwang, E. H.; Adam, S.; Das Sarma, S. Phys. Rev. B: Condens.
Matter Mater. Phys. 2007, 76, 195421.
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DOI: 10.1021/acs.nanolett.6b00638
Nano Lett. XXXX, XXX, XXXXXX