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IRF630FP
N-CHANNEL 200V - 0.35 - 9A TO-220/TO-220FP
MESH OVERLAY MOSFET
TYPE
VDSS
RDS(on)
ID
IRF630
200 V
< 0.40
9A
IRF630FP
200 V
< 0.40
9A
3
1
TO-220
DESCRIPTION
This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY process. This technology matches and
improves the performances compared with standard
parts from various sources.
TO-220FP
.APPLICATIONS
HIGH CURRENT SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS)
DC-AC CONVERTERS FOR TELECOM
INDUSTRIAL, AND LIGHTING EQUIPMENT
Parameter
Value
IRF630
VDS
VDGR
VGS
Unit
IRF630FP
200
200
20
ID
9 (**)
ID
5.7
5.7 (**)
36
36
IDM ()
PTOT
75
30
Derating Factor
0.6
0.24
W/C
V/ns
dv/dt (1)
VISO
--
Tstg
Storage Temperature
Tj
2000
65 to 150
150
October 2001
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IRF630 / FP
THERMAL DATA
Rthj-case
TO-220
TO-220FP
1.67
4.17
C/W
Rthj-amb
62.5
C/W
Rthc-sink
0.5
C/W
300
Tl
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
EAS
Max Value
Unit
160
mJ
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 A, VGS = 0
IDSS
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = 20V
V(BR)DSS
Min.
Typ.
Max.
200
Unit
V
50
100
nA
Max.
Unit
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
RDS(on)
Static Drain-source On
Resistance
ID(on)
Min.
2
Typ.
3
0.35
0.40
DYNAMIC
Symbol
gfs (1)
2/9
Parameter
Forward Transconductance
Ciss
Input Capacitance
Coss
Crss
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 4.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
Max.
Unit
S
540
700
pF
Output Capacitance
90
120
pF
Reverse Transfer
Capacitance
35
50
pF
IRF630 / FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
Typ.
Max.
Unit
10
14
ns
15
20
ns
31
45
nC
7.5
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
Parameter
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
Min.
VDD = 160V, ID = 9 A,
RG = 4.7, VGS = 10V
(see test circuit, Figure 5)
Typ.
Max.
Unit
12
17
ns
12
17
ns
25
35
ns
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Source-drain Current
ISDM (2)
VSD (1)
Forward On Voltage
ISD = 9 A, VGS = 0
trr
Qrr
IRRM
36
1.5
170
ns
0.95
11
3/9
IRF630 / FP
Thermal Impedence for TO-220
Output Characteristics
Transfer Characteristics
Transconductance
4/9
IRF630 / FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/9
IRF630 / FP
Fig. 1: Unclamped Inductive Load Test Circuit
6/9
IRF630 / FP
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
D1
0.107
1.27
0.050
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
L4
H2
G1
F1
L2
F2
Dia.
L5
L9
L7
L6
L4
P011C
7/9
IRF630 / FP
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.7
0.017
0.027
0.75
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9.3
0.354
0.366
3.2
0.118
0.126
L3
L3
L6
F2
G1
F1
L7
1 2 3
L2
8/9
L4
IRF630 / FP
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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