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Advantages of Si over Ge
Si has a larger bandgap(1.1 eV for Siversus 0.66
eV for Ge)
Si devices can operate at a higher temperature
(150 C vs100 C)
o
Point
Deffects
Dislocations
defects.
are
line
Dislocations in a lattice
are dynamic defects.
That is, they can diffuse
under applied stress,
dissociate into two or
more dislocations, or
combine
with
other
dislocations.
Dislocations in devices
are
generally
undesirable,
because
they act as sinks for
metallic impurities and
alter diffusion profiles.
Planar Deffects
Two typical area or planar defects are twins and
grain boundaries
l
Twinning represents a change in the crystal
orientation across a twin plane, such that a mirror
image exists across that plane
l
Grain boundaries are more disordered than twins
and separate grains of single crystals in
polycrystalline silicon
l
Planar defects appear during crystal growth, and
crystals having such defects are not considered
usable for IC manufacture and are discarded
l
4 SiHCl3
Czochralski Growth
Ar
EGS
Float-Zone Process, The float-zone process has some advantages over the Czochralski
process for the growth of certain types of silicon crystals.The molten silicon in the float-zone
apparatus is not contained in a crucible, and is thus not subject to the oxygen contamination
present in CZ-Sicrystals.The float-zone process is also necessary to obtain crystals with a high
resistivity(>> 25 W-cm).
Epitaxial Growth
Epitaxy means the growth of a single
crystal film on top of a crystalline substrate.
For most thin film applications (hard and
soft coatings, optical coatings, protective
coatings) it is of little importance.
However, for semiconductor thin film
technology it is crucial.
Types of Epitaxy
Homoepitaxy
The film and the substrate are the same material.
Often used in Si on Si growth.
Epitaxially grown layers are purer than the substrate and
can be doped independently of it.
Heteroepitaxy
Film and substrate are different materials.
Eg: AlAs on GaAs growth
Allows for optoelectronic structures and band gap
engineered devices.
Heterotopotaxy
It is a process similar to heteroepitaxy except that thin film growth is not
limited to two-dimensional growth; the substrate is similar only in structure
to the thin-film material.
Pendeo-epitaxy
Is a process in which the heteroepitaxial film is growing vertically and
laterally at the same time.
Epitaxy is used in silicon-based manufacturing processes for bipolar
junction transistors (BJTs) and modern complementary metaloxide
semiconductors (CMOS), but it is particularly important for compound
semiconductors such as gallium arsenide.
Manufacturing issues include control of the amount and uniformity of the
deposition's resistivity and thickness, the cleanliness and purity of the
surface and the chamber atmosphere, the prevention of the typically much
more highly doped substrate wafer's diffusion of dopant to the new layers,
imperfections of the growth process, and protecting the surfaces during the
manufacture and handling.
Heteroepitaxy
Trying to grow a layer of a different material on
top of a substrate leads to unmatched lattice
parameters.
This will cause strained or relaxed growth and
can lead to interfacial defects.
Such deviations from normal would lead to
changes in the electronic, optic, thermal and
mechanical properties of the films.