Superlattices and Microstructures 64 (2013) 167177

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Superlattices and Microstructures

journal homepage: www.elsevier.com/locate/superlattices

New Schottky diode based entirely on nickel

aluminate spinel/p-silicon using the solgel
spin coating approach
B. Gunduz a, Ahmed A. Al-Ghamdi b, A.A. Hendi c, Zarah H. Gafer d,
S. El-Gazzar e, Farid El-Tantawy e, F. Yakuphanoglu b,f,
a

Department of Science Education, Faculty of Education, Mus Alparslan University, 49100 Mus, Turkey
Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
c
Physics Department, Sciences Faculty for Girls, King Abdulaziz University, Jeddah, Saudi Arabia
d
Department of Chemistry, Faculty of Science, King Khalid University, Abha, Saudi Arabia
e
Department of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt
f
Department of Physics, Faculty of Science, Firat University, Elazig 23169, Turkey
b

a r t i c l e

i n f o

Article history:
Received 17 July 2013
Received in revised form 3 September 2013
Accepted 8 September 2013
Available online 18 September 2013
Keywords:
Nickel aluminate spinel
Microstrucure
Electrical properties
Schottky diode

a b s t r a c t
A new kind of p-type Schottky diode was successfully fabricated
based entirely on Al/NiAl2O4/p-Si/Al spinel using the solgel spin
coating approach. The estimated values of particle size and surface
roughness of the as prepared NiAl2O4 lm are found to be 168
362 nm and 27.735 nm, respectively. The electrical properties of
the Al/NiAl2O4/p-Si/Al diode were characterized in terms of currentvoltage (IV) and capacitancevoltage (CV) techniques. The
rectication ratio and ideality factor of the Al/NiAl2O4/p-Si/Al diode
is decreased by increasing temperature. It was observed that there
is a difference between the ideality factor obtained from the forward bias semi-log IV plot and dV/d(ln I) vs. I plot. The electrical
parameters at room temperature of the as fabricated Al/NiAl2O4/
p-Si/Al diode such as built-in potential, acceptor concentration,
barrier height different temperatures and frequencies were determined from the capacitancevoltage measurements. It is found
that the values of the acceptor concentration are decreased, while
the values of the built-in potential are increased with increasing
frequencies of the diode.
2013 Elsevier Ltd. All rights reserved.

Corresponding author at: Department of Physics, Faculty of Science, Firat University, Elazig 23169, Turkey. Tel.: +90
4242370000 3792; fax: +90 4242330062.
E-mail addresses: fyhanoglu@rat.edu.tr, fyhan@hotmail.com (F. Yakuphanoglu).
0749-6036/$ - see front matter 2013 Elsevier Ltd. All rights reserved.
http://dx.doi.org/10.1016/j.spmi.2013.09.022

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B. Gunduz et al. / Superlattices and Microstructures 64 (2013) 167177

1. Introduction
The recent development of transparent thin-lm p-type diode represents a major advance in the
emerging eld of transparent electronics. Oxides comprise a wide class of materials exhibiting rich
crystal structures and physical properties that make them ideal candidates for a plethora of applications. Among the semiconductors, metal oxides stand out as one of the most versatile materials, owing
to their diverse properties and functionalities and are considered as a promising alternative to conventional semiconductors materials such as amorphous silicon and organic semiconductors [1,2]. In particular, transparent conducting oxides (TCOs) lms has wide potential applications such as at
screens, photovoltaic devices, display devices (i.e. liquid crystal displays), touch screens, photonic
crystal, gas sensors, electro-chromic devices, dilute magnetic semiconductors, ozone sensing and more
[312]. In fact, the current commercial products of transparent optoelectronic devices are based on
transparent n-type and p-type thin lm materials. Transparent n-type conductors are well known,
and continue to be actively studied. While, transparent conducting p-type thin lms received a lot
of attention due to its higher conductivities, high mobilities compared with n-type materials and high
transmission in the visible range of the electromagnetic spectrum [1315]. However, One class of
nanoscale materials which has attracted tremendous attention is the geometrically frustrated spin
systems because of the fascinating fundamental physics they display. The spinel structure type with
the general formula AB2X4, the A represents a divalent metal ion such as magnesium, iron, nickel,
manganese and zinc [16]. The one of the most important of these materials is CuFe2O4 due to its interesting magnetic properties [17]. The different kinds of CuFe2O4 material such as nanoparticles have
been synthesized using various methods [1821]. Some spinel ferrites such as NiFe2O4, CoFe2O4,
MnFe2O4, and MgFe2O4, have been synthesized by electrospinning process [22]. In fact, several useful
methods have been used to prepare high quality TCO thin lms, such as pulsed-laser deposition, metalorganic chemical vapor deposition, molecular beam epitaxy, magnetron sputtering, electron beam
evaporation, spray pyrolysis, vacuum evaporation, chemical deposition, atomic layer deposition, successive ionic layer adsorption, and reaction electrochemical techniques [5,23,24]. The solgel chemistry is an attractive alternative to other synthetic methods because is prepare large scale TCO thin lms
at low cost, low temperature processing, high depositing rate, easy technology, and can generally be
done under room conditions with general lab equipment, all of which make a solgel methods is very
useful for preparation of nanostructure TCO lms for modern electronic device applications [4].
However, prior to this report, synthesis and fabrication of Al/NiAl2O4/p-Si/Al spinel using the sol
gel spin coating approach for Schottky diode have not been known. With the above consideration in
mind, we successfully fabricated a novel Schottky diode based entirely on Al/NiAl2O4/p-Si/Al using the
solgel spin coating technique. The electrical properties of the Al/NiAl2O4/p-Si/Al diode were examined by several techniques like currentvoltage (IV) and capacitancevoltage (CV). The diode characteristic parameters of Al/NiAl2O4/p-Si/Al lm such as rectication ratio, ideality factor, barrier height
and series resistance at different temperatures were computed from the currentvoltage measurements. Furthermore, the electrical parameters of the Al/NiAl2O4/p-Si/Al diode such as built-in potential, acceptor concentration at different frequencies were evaluated, too.

2. Experimental procedure
The NiAl2O4 lm was grown on p-type silicon substrate using solgel spin coating method. In a typical procedures, nominal ratios of nickel acetate and aluminum nitrate were dissolved in ethanol at
60 C with magnetic stirrer and then, ethanol amine was added to this solution by stirring at 60 C
on a hot plate. The prepared mixture was stirred using a magnetic stirrer for about 2 h to obtain clear
homogeneous solution. For fabrication of the Schottky barrier diode, p-type single crystal silicon substrate was used. The used Si wafer has 600 lm thickness with resistivity of 510 X cm. Before fabrication of the Al/NiAl2O4/p-Si/Al diode, the silicon substrate was cleaned. In order to remove the native
oxide layer on surface of the p-Si wafer, the substrate was etched by HF and then was rinsed in deionised water using an ultrasonic bath for 1015 min and nally was chemically cleaned according to
method based on successive baths of methanol and acetone. Immediately after surface cleaning, an

B. Gunduz et al. / Superlattices and Microstructures 64 (2013) 167177

169

Fig. 1. The cross-section of the Al/NiAl2O4/p-Si/Al diode.

ohmic contact was prepared with aluminum (Al) metal with a thickness of 150 nm thermally evaporated onto the whole back surface of the Si wafer at the pressure of 4.5  105 Torr followed by
annealing at 570 C for 3 min in N2 atmosphere. Ohmicity of the contact was controlled by current
voltage measurements and the contact shows a good ohmic behavior. After that, the Schottky barrier
diode of NiAl2O4 was fabricated on p-Si wafer by solgel spin coating followed by drying at 150 C for
10 min and nally it was annealed at 400 C for 1 h in nitrogen atmosphere. The thickness of the NiAl2O4 lm was obtained about 200 nm by atomic force microscopy. The contact area of the diodes was
calculated to be 3.14  102 cm2. Finally, the top Al contact was deposited by evaporating Al metal
onto NiAl2O4 lm. The cross-section of the Al/NiAl2O4/p-Si/Al diode is depicted in Fig. 1. The electrical
characterizations of the Al/NiAl2O4/p-Si/Al diode were performed using semiconductor characterization system (Keithley 4200). The crystal structure and morphology were analyzed by Bruker D8 Xray diffractometer and Park system XE100 E atomic force microspe (AFM).
3. Results and discussion
3.1. Morphology of the NiAl2O4 thin lm
The surface morphology of the lms was examined by a contact-mode atomic force microscope
(AFM). Fig. 2(a and b) shows one-dimensional (1D) and three dimensional (3D) AFM images of the
as prepared NiAl2O4 lm, respectively. It is clear that the NiAl2O4 lm is formed from homogeneous
undistorted nanoparticles. The particle size of the NiAl2O4 lm was determined to be 168362 nm.
The surface roughness values of the NiAl2O4 lm is found to be 27.735 nm using a PARK system
AFM XEI software programming.
The crystal structure of the prepared spinel NiAl2O4 lm was analyzed by X-ray diffraction pattern
and XRD pattern is shown in Fig. 2c. All of the indexed peaks in the obtained pattern are well-matched
with that of bulk spinel NiAl2O4 which conrms that the synthesized lm has a face centered cubic
structure according to the JSDF card no. 78-1601. The crystal structure results of NiAl2O4 lm are in
agreement with the results of nickel aluminate spinel formation during sintering of simulated Ni-laden sludge and kaolinite [25]. No other peak related to impurities was detected in the pattern within
the detection limit of the X-ray diffraction and this conrms that the prepared lm is a pure spinel
NiAl2O4.
3.2. Dark currentvoltage characteristics of the Al/NiAl2O4/p-Si/Al diode
IV characteristics of the Al/NiAl2O4/p-Si/Al diode at various temperatures is depicted in Fig. 3. As
shown in the Fig. 3, the reverse current shifts down with increasing temperature and the current at
423 K is higher than the current at 298 K for the same reverse bias. The increase of the current is
attributed to the drift velocity of heat-generated electrons and holes in NiAl2O4. It is evaluated that
the current in the reverse direction is strongly increased by temperature. As seen in Fig. 3, according
to the forward bias region, the current in reverse bias region does not change much. In Fig.3, it is worthy to note that the as-fabricated diode shows a non-ideal behavior.
The rectication ratio (RR) is the ratio of forward current to the reverse current at a certain voltage.
The rectication ratios of the Al/NiAl2O4/p-Si/Al diode at 5 V at room and different temperatures

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B. Gunduz et al. / Superlattices and Microstructures 64 (2013) 167177

Fig. 2. (a) One-dimensional (1D) and (b) three dimensional (3D) AFM images of the NiAl2O4 lm. (c) XRD spectra.

were evaluated and data are recorded in Table 1. A closer look at the data in Table 1, shows the rectication ratio (1.519  103) of the Al/NiAl2O4/p-Si/Al diode at room temperature is higher than that
the value (0.065  103) of the diode at 423 K. In addition, the rectication ratios of the Al/NiAl2O4/p-Si/
Al diode except for 323 K decrease with increasing temperature.
The IV characteristics of such behavior can be analyzed by thermionic emission theory [26]:

I I0 exp





qV  IRS
qV  IRs
1  exp 
nkT
kT

where q is the electronic charge, V is the applied voltage, RS is the series resistance, n is the ideality
factor, k is the Boltzmann constant, T is the temperature, and I0 is the reverse saturation current
and given by [27]:



q/
Io AA T 2 exp  b
kT

where A is the active device area, A is the effective Richardson constant (equal to 32 A/cm2 K2 for ptype silicon) and /b is the barrier height.
The ideality factors (n) of the Al/NiAl2O4/p-Si/Al diode were calculated from the slope of Fig. 3b and
the obtained values are recorded in Table 1. It is clearly shown in Table 1 that the ideality factor
(4.479) of the Al/NiAl2O4/p-Si/Al diode at room temperature is higher than that of the value (3.404)

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B. Gunduz et al. / Superlattices and Microstructures 64 (2013) 167177

Fig. 3. IV characteristics of the Al/NiAl2O4/p-Si/Al diode at various temperatures.

Table 1
Electrical parameters from calculated IV measurements of the Al/NiAl2O4/p-Si/Al diode at different temperatures.
T (K)

From IV plot
RR  10

298
323
348
373
398
423

1.519
1.600
0.677
0.417
0.120
0.065

From dV/d ln(I)I and H(I)I plot

n

/b (eV)

Rs (k X)

/b (eV)

4.479
3.501
4.129
3.574
3.484
3.404

0.665
0.644
0.659
0.632
0.612
0.596

1.616
1.501
1.598
1.577
1.497
1.436

11.705
9.807
10.563
9.840
9.764
9.623

0.774
0.738
0.717
0.690
0.677
0.665

of the diode at 423 K. Furthermore, the n values of the Al/NiAl2O4/p-Si/Al diode except for 323 K are
decreased with increasing temperature. The ideality factor (4.479) of the Al/NiAl2O4/p-Si/Al diode at
298 K is larger than that of the some TCO diodes [4,23] and it is smaller than that value (14.22) [5]
of the Al/ZnO/p-Si diode. In addition, the values of the ideality factor are higher than that of the value
(1) of an ideal diode. This indicates that the current is inuenced by the thermionic emission mechanism. It is obvious that there is a deviation from the linearity in the forward current region as shown
in Fig. 3b. This deviation is due to the series resistance and the presence of the NiAl2O4 layer inserted
between Al metal and silicon.
Assuming that thermionic emission is the main mechanism for the diode, the barrier height /b values of the Al/NiAl2O4/p-Si/Al diode at room and different temperatures were calculated and listed in
Table 1. As seen in Table 1, the /b value (0.665 eV) of the Al/NiAl2O4/p-Si/Al diode at room temperature is higher than that the value (0.596 eV) of the diode at 423 K. The /b values of the Al/NiAl2O4/p-Si/
Al diode decrease with increasing temperature. This suggests that the barrier height of the Al/NiAl2O4/
p-Si/Al diode is modied by temperature.
The higher value of the ideality factor shows the presence of inhomogeneities of Schottky barrier
height and existence of interface states, and series resistance [33]. Thereby, the deviation from the
ideal behavior for the diode can be explained on the basis of series resistance. Therefore, we estimated
the series resistance from I to V characteristics of the Al/NiAl2O4/p-Si/Al diode using Cheung and Cheung method [28]. According to CheungCheung method, the forward bias IV characteristics due to
the thermionic emission having the series resistance can be expressed as [28]:

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B. Gunduz et al. / Superlattices and Microstructures 64 (2013) 167177



qV  IRS
I Io exp 
nkT

where IRs is the voltage drop across the series resistance.

According to this method, the series resistance, ideality factor, and barrier height can be estimated
from the following equations:

dV
kT
n IRs
d ln I
q

HI IRs  n/b

and

where

HI V  n



kT
I
ln
 2
q
AA T

The slope and y-axis intercept of a plot dV/d ln(I) vs. I will give Rs and nkT/q, respectively. The values
of series resistance and ideality factor at room and different temperatures were calculated and the
data are recorded in Table 1. A close look to the data in Table 1 it is clear that, the series resistance
and ideality factor values of diode obtained from dV/d ln(I) vs. I plot decreases with increasing temperature. Moreover, there is a difference between the ideality factor obtained from the forward bias semilog IV plot in Fig. 3b and dV/d ln(I) vs. I plot in Fig. 4a. This difference could be ascribed to the presence of series resistance, interface states, and the voltage drop across the interfacial layer [29]. Using
the ideality factor, the plot of H(I) vs. I (Fig. 4b) will also give a straight line with the y-axis intercept
equal to n/b. The obtained /b values of the diode were found and listed in Table 1. As seen in Table 1,
the /b values of the Al/NiAl2O4/p-Si/Al diode decrease with increasing temperature. It is evaluated that
temperature changes the /b values of the Al/NiAl2O4/p-Si/Al diode. Also, it is observed that there is a
difference between the barrier height (Fig. 4c) obtained from the forward bias semi-log IV plot
(Fig. 3b) and H(I) vs. I plot (Fig. 4b). This difference is owing to the interface state, series resistance
effects and the IV characteristics used the low voltage region for calculation, while H(I) vs. I plot is
applied to the full voltage range of forward bias characteristics of the diode [23].
3.3. Capacitancevoltage characteristics of the Al/NiAl2O4/p-Si/Al diode
For practical applications, we tested the dependence of capacitance with applied voltage at different frequencies and temperatures. Typical, CV characteristics of the Al/NiAl2O4/p-Si/Al diode as a
function of voltage at the frequency range of 10 kHz1 MHz and at various temperatures of 298,
373 and 423 K, respectively are depicted in Fig. 5(ac). It is clear that, the capacitance curves are
dependent on both the bias voltage and frequency. As seen in Fig. 5c, there is one irregular curve. It
is evaluated that this irregular curve at 423 K is due to the avalanche of charge carriers in the interface
of the diode. At negative voltages, the capacitance value was not changed with applied voltage and
frequency. However at low positive voltages, capacitance values increase linearly with increasing voltages up to a certain value. At higher positive voltages, capacitance values reach a constant value and
remains almost constant with increasing voltages. Also, at positive voltages, the capacitance values are
decreased with increasing frequency.
The series resistance of the Al/NiAl2O4/p-Si/Al diode was calculated using the following equation:

RS

Gm =xC m 2
1 Gm =xC m 2

Gm

The effect of bias voltage and frequency on the series resistance of the Al/NiAl2O4/p-Si/Al diode is
displayed in Fig. 6(ac) at 298, 373 and 423 K, respectively. It is observed that the RsV plots have a
peak and there is a small shift in the peak position of the Al/NiAl2O4/p-Si/Al diode towards lower positive bias voltage with increase in the frequency. The peaks intensity of the series resistance for 1 kHz
is more higher than that of the 1 MHz. Thereby, the peaks intensity of the series resistance decreases

B. Gunduz et al. / Superlattices and Microstructures 64 (2013) 167177

Fig. 4. (a) dV/d ln(I) vs. I. (b) H(I) vs. I and (c) /bT plots of the Al/NiAl2O4/p-Si/Al diode.

173

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B. Gunduz et al. / Superlattices and Microstructures 64 (2013) 167177

Fig. 5. CV characteristics of the Al/NiAl2O4/p-Si/Al diode at frequency range of 10 kHz1 MHz and (a) 298, (b) 373 and (c)
423 K temperature.

with increasing frequency. This behavior indicates that the interface states change with frequency. The
high value of series resistance at low frequencies is evoked to the interface states can follow the AC

B. Gunduz et al. / Superlattices and Microstructures 64 (2013) 167177

175

signal and yield an excess capacitance at low frequency. Whereas at higher frequencies, the low series
resistance is explained, as the interface states cannot follow the AC signal and do not make a contribution to interface states [30].
The capacitancevoltage (CV) characteristics of the Al/NiAl2O4/p-Si/Al diode at the frequency
range of 10 kHz1 MHz at 298 K is displayed in Fig. 5a. The CV characteristics of the diode can be analyzed by the following relation [31],

1
C2

2V bi V
A2 e0 es qN a

where Vbi is the built-in potential, es is the dielectric constant of the semiconductor (11.8e0 for p-type
Si), Na is the doping concentration in the semiconductor and Vd is the diffusion potential at zero bias.
The Na and Vbi values of the Al/NiAl2O4/p-Si/Al diode at the frequency range of 10 kHz1 MHz and
at 298 K are listed in Table 2. As seen in Table 2, the Na values of the diode are decreased, while the Vbi
values of the diode are increased with increasing frequencies.
The barrier height of the Al/NiAl2O4/p-Si/Al diode was calculated from CV plot at the frequency
range of 10 kHz1 MHz and for 298 K temperature using the following relation [32]:

/b C  V C 2 V bi V p C 2 V bi

Fig. 6. RSV plots of the Al/NiAl2O4/p-Si/Al diode (a) 298, (b) 373 and (c) 423 K.

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B. Gunduz et al. / Superlattices and Microstructures 64 (2013) 167177

Table 2
Electrical parameters from calculated CV measurements of the Al/NiAl2O4/p-Si/Al diode at different frequencies.
f (kHz)

Na  1018 (cm3)

Vbi (V)

Vp (V)

/b (eV)

10
50
100
300
500
700
1000

9.790
6.151
7.147
7.382
6.698
6.421
6.258

0.851
1.268
1.199
1.350
1.526
1.513
1.636

0.371
0.383
0.379
0.378
0.382
0.380
0.382

0.561
0.666
0.646
0.679
0.722
0.718
0.747

where C2 is a parameter inverse of the ideality factor and equal (C2 = 1/n), Vp is the potential difference
between the Fermi level and the bottom of the valence band in the neutral region of p-type Si is given
by:

Vp

 
kT
Nv
ln
q
Na

10

where Nv is density of states in the valence band Nv = 1.82  1019 cm3.

The /b and Vp values of of the Al/NiAl2O4/p-Si/Al diode were determined using Eqs. (9) and (10) and
the obtained /b and Vp values are recorded in Table 2. As seen in Table 2, the /b and Vp values of the Al/
NiAl2O4/p-Si/Al diode increase with increasing frequencies. It is noteworthy that the /b value
(0.747 eV) obtained from CV measurement is higher than /b value (0.665 eV) obtained from IV measurement. This is ascribed to the inhomogeneities such as non-uniformity of the interfacial layer thickness and distributions of the interfacial charges [33]. The higher effective barrier heights are related
with small and then close to unity ideality factors.
4. Conclusions
A new p-type Schottky diode have been successfully fabricated for the rst time, based entirely on
Al/NiAl2O4/p-Si/Al using sol gel spin coating technique. The lms are homogeneous with evenly distributed grains on the surface of a p-Si substrate. The current of the diode for 423 K is higher than
the current for 298 K at the same reverse bias. The current in the reverse direction is strongly increased by temperature. The ideality factor (4.479) of the Al/NiAl2O4/p-Si/Al diode at room temperature suggests that the diode exhibits a non-ideal behavior. The /b values of the Al/NiAl2O4/p-Si/Al
diode are decreased with increasing temperature. The capacitance are dependent on both the bias
voltage and frequency. The /b value (0.747 eV) obtained from CV measurements is higher than /b
value (0.665 eV) obtained from IV measurements.
Acknowledgments
The authors gratefully acknowledge and thank the Deanship of Scientic Research, King Abdulaziz
University (KAU), Jeddah, Saudi Arabia, for the research group Advances in composites, Synthesis and
applications. This work is as a result of international collaboration of the group with Prof. F. Yakup_
hanoglu. Prof. Dr. Farid El-Tantawy thanks to TUBITAK
for supporting under Fellowships for Visiting
Scientists and Scientists on Sabbatical Leave. This study also supported by Frat University under
the project: MMY-12.02.
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