Laboratory Manual

EE 304
Introduction to Solid State Devices Lab
(Fall 2011)

EXPERIMENT - 1
Measurements of semiconductor resistivity, sheet resistance by four-point probe and
conductivity type by hot probe.

the

INTRODUCTION
The amount of dopant present in a semiconductor is determined by measuring its conductivity or
resistivity. The resistivity of a material is the opposing force a material exerts to prevent flow of
current when voltage is applied across it and conductivity depends upon the number of free
carriers (holes and/or electrons) and their mobility. If the resistivity of a material is known, the
resistance of a rectangular block of material is determined by
R = L /w t = L /A
Where R = resistance of material (ohms), = resistivity of material (ohm.cm), L = length of
material from contact to contact, w = width, t = thickness, A = wt = cross-sectional area.
The resistance of a thin conductive layer, such as diffused layer (n or p type) or a thin metal film,
is proportional to the resistivity of the layer and inversely proportional to the thickness t. A quantity
Rs called as sheet resistance is defined by the ratio of resistivity to thickness. It is material
property of conductors which are two dimensional. The resistance of a conducting thin
rectangular block is
R = /t) (L /w) = Rs (L /w)
The ratio L/w is referred to as the number of squares, since it is the number of squares of size w
that can fit into the rectangle without overlapping. The term squares is dimensionless. The sheet
resistance has the units of ohms, but it is convenient to refer it as ohm per square. The resistance
of a rectangular thin layer is therefore the sheet resistance times the number of squares (L /w).
The concept can be generalized to include any arbitrarily shaped thin film conductor.
The thickness of uniform conducting layers on an insulating layer can be determined by the
following formula
Thickness = resistivity/sheet resistance
Since the resistivity is a constant for pure materials such as aluminum, the sheet resistance is
actually a measurement of the film thickness.
FOUR-POINT PROBE
The sheet resistance is measured by four-point probe method. In this method, four point
contacts are made to the thin layer, a current is carried through the outer two contacts and the
voltage drop is measured across the remaining contacts. The sheet resistance is given by
Rs = K (V/I)
where k is a constant that depends on the configuration, position, and orientation of the probes.
The probes are commonly equally spaced in straight line, with the two outer probes being the
current probes. The probe spacing is usually very small compared to the dimensions of the film
and large compared to layer thickness, t. If the film were infinite in all directions, the constant K =
4.5324. The four-point probe used in the lab. is Magne-Tron Instruments, model M-700, the
sheet resistance value is directly displayed but in its internal calculation above formula is used.
The resistivity of silicon depends upon both the number of donor and acceptor atoms
added and temperature. The doping concentration of a uniformly doped sample can be obtained
from Figure 3.8 in Textbook.
CONDUCTIVITY TYPE MEASUREMENT
Several techniques are used to determine the semiconductor conductivity type. They are

wafer flat location, thermal emf and rectification. The simplest method utilizes the shape of the
wafers flats following a standard pattern. The silicon wafers are always circular with
characteristics flats, illustrated in your textbook. The primary flat is usually along <100> direction
and secondary flats are used to identify the conductivity type and orientation.
In the hot or thermoelectric probe method the type is determined by the sign of the
thermal emf generated by a temperature gradient. Two probes contact the sample surface, one is
hot and the other is cold. The diffusion of mobile carriers (either holes or electrons) from higher
temperature regions to lower temperature regions is used to determine whether a sample of
silicon is n type or p type. If the area of a silicon is heated locally, the majority carriers diffuse
away from the heated region. A voltage results which is measured to determine the conductivity
of the sample. If the sample is n type, the voltage on the hot probe is positive with respect to
second probe. Similarly, if the sample is p type, the voltage on the hot probe is negative with
respect to second probe.
In the rectfication method, to determine the conductvity type, sign of conductivity is
determined by the polarity of a rectified ac signal at a point contact to the semiconductor. An ac
voltage is applied between probe 1 and 2, and the resulting potential is measured between
probes 4 and 2 as shown in Figure-5. The voltage drop V42 is small when the ac voltage at probe
2 is positive because the metal semiconductor junction is forward biased. But for negative voltage
at probe 2, the junction is reverse biased; V42 is large and positive. The large positive and small
negative ac V42 result in a dc component with polarity of semiconductor-metal junction voltage
necessary to reverse bias the junction. For n type V42>0, and for p type V42<0. Probe 3 can also
be used as the voltage sensing probe.
EQUIPMENT
The four-point probe by Magne-Tron Instruments Model M 700 will be used for this experiment.
The operating instructions provided in Appendix-A are intended for use as an additional reference
to the existing manual accompaniedd with the equipment. Read carefully pages 1-8 of the manual
for introduction and operation of the equipment.
NOTE: Before using the four-point probe adjust height of the probe by the method outlined in
Appendix-A. Do not hold the thermo switch for a longer time because it may damage probe points
by excessive heating of the sample. Never touch the probe tips.
PROCEDURE
1. Turn on power to the four-point probe unit.
2. Leave the system on to warm-up for 15 minutes.
3. Place the sample on the probes pedestal and gently lower the probes on the sample. Follow
the procedure for measuring resistivity, sheet resistance and conductivity type.
4. You will be provided six silicon wafers of different orientation and conductivity. Thickness of
the wafers will be provided from the manufacturer data. All wafers are coded by number on
the rough side of the wafers.
5. Determine the conductivity type of the wafers by observing the primary and secondary flats of
the wafers and record your result.
6. Check the conductivity type determined in step 5 with the thermoelectric mode of operation of
the four-point probe and record your results.
7. Measure the sheet resistance and resistivity of the samples along the diameter of the wafer
at six different points (i.e. from left to right and top to bottom of the wafer) and find any
variation in the sheet resistance and resistivity over the wafer. Show your results in terms of
standard deviation.
8. Use your measured data to determine the doping concentration from Figure vs doping
concentration graph in your textbook.
9. Present your results in a formal report.

APPENDIX A
FOUR POINT PROBE

The Magnetron model 700 resistivity test system is an ultra-precision instrument, being designed
and manufactured to measure the resistivity and conductivity of any semiconductor sample. Its
capabilities offer the possibility of making different measurements in various modes; i.e.,
directly in Ohms or V/I, Ohms per square and Ohms centimeter, in MILS or MICRONS. The
range of resistivity the M-700 can measure is from 10-6 to 10+6 with 1- microvolt resolution.

Front Panel Description:

a. O/R - Out of Regulations LED
b. Thickness Switch-used to input thickness of the sample for determination of the bulk
resistivity of the sample.
c. Function Switch-used to determine which of the various modes is to be performed.
d. Polarity Switch-used to change the direction of the current being passed through the
sample.
e. Polarity Switch-used to change the direction of the current being passed through the
sample.
f. Range Indicating LEDs-indicates the prop units for Calibration Test and Resistivity
measurements.
Check Calibration:
The M-700 can be checked for proper electrical calibration as follows:
a. Make sure polarity switch is in either + or - position
b. Activate Test Mode Switch. Along side this switch is another switch marked: IN 1.000
and OUT 10.00, put this in the OUT Position, 10.00 and readouts should indicate:
Range Switch Position Digital & Range LED Readout

1,2

---- or blanked digits

10.00 + .01

10.00 + .1

0.010 x10+3

0.01 x10+3

0.001 x10+3

0.0001 x10+6

With push-button in the "IN" 1.000 mode:

Range Switch Position Digital & Range LED Readout
1,2,3,4

---- or blanked digits

1.000 + x10+3

1.00 x10+3

0.1 x10+3

0.001 x10+6

OPERATING PROCEDURE:
1. Before turning the On-Off switch on, place the Function switch to TEST Position and
follow test calibration procedures given on proceeding page. Allow instrument to warm
up for 15 to 20 minutes before concluding readout is improper.
2. If the instrument checks all right proceed as follows:
a. Place Polarity to + position.
b. Select Function Switch position, i.e., Ohms, Ohms/Sq. etc.
c. Select Range Switch to proper position or select lowest setting 10 uA, and
increase setting step by step.
d. If measurements are to be made in Ohm-cm, set Thickness switch as explained
under title Thickness Switch.
e. Assuming the four-point probe has been connected and its four-point probe head
is off the sample now, put your sample on the stage of M-700 (if the stage is
connected to vacuum, turn on the vacuum switch); turn on the On-Off switch.
f. Activate the four point probe head by lowering it onto the sample being tested or
measured. Once proper contact with the sample is made, the digital readout will
indicate its proper resistivity.
g. Lift the four-point probe head, remove your sample from the stage and turn off
the power.

Example: Sheet Resistivity Measurements (OHMS/SQUARE)

8. Set-up as required.
9. Place Function Switch to OHM/SQUARE Position.

10. Set the Range Switch to the largest range.

11. Decrease the range step by step until get into the best range.
12. Read resistivity in OHMS/SQUARE on Digital Readout and Range (Units)
Readout. For example, if the Digital Readout is 23.4 and units readout is 10+3 or
Kilo, the resistivity is 23.4 + 10+3 OHM/SQ or 23.4 K-OHMS/SQ or 23400
OHMS/SQ.

EXPERIMENT - 2
Inspection of a mask and a fabricated wafer to recognize devices and processing defects
INTRODUCTION
An integrated circuit (IC) is fabricated by creating a layout design transferred on a
photolithographic mask and a series of manufacturing steps carried out in a specific order. These
fabrication steps convert the circuit and its layout design in operable silicon integrated chip. IC
layout design is created by computer aided design (CAD) software representing the geometry of
the designed circuit. Performance of the designed circuit is critically dependent on the geometry
and processing steps. The IC layout pattern is transferred to surface of quartz plates covered with
chromium using photolithographic technique and pattern generator or electron-beam (E-Beam)
equipment. The quartz plate made by this process is called master mask (i.e. reticule). Working
masks are made from reticule whose size is such that with a single exposure the entire area of a
single manufacturing wafer can be covered. Fabricated wafer contains test structure, die,
alignment marks, resolution pattern, identification number etc. Test structure is used to monitor
the quality of the process. Figure-1 (available in the lab) shows a test pattern and a key to all
structures. Each major processing step is evaluated and any disturbance, error or abnormality
detected on any wafer is discarded. Some of the process abnormalities, which can be visually
examined, are listed below whereas material and process related disturbances would be
introduced in later experiments.
A line registration error is the difference between actual line and the line registered on the
IC, which is mainly due to temperature fluctuation, photoresist thickness and exposure and
development error. Consequently edges of a region fluctuate around its nominal value. Mask
alignment error is caused by limited precision with which subsequent lithography masks used in
the process can be aligned with respect to layout feature already engraved on the surface of the
manufacturing wafer. Examples of misalignment are shown in Figure-2 (available in the lab)
The purpose of this experiment is to familiarize with masks and finished wafer,
identification of different circuit elements on mask and fabricated wafers, recognizing process
defects on fabricated wafer and mask defects. Figure- 3 (available in the lab) shows results of
scratched mask and pinhole caused by contact mask on a wafer. Figure-4 (available in the lab)
shows example of open metallization, pinhole and visual defects on the surface of a finished
wafer. These figures will be of help in recognizing these defects and to understand the cause of
these. Figure-5 and 6 shows the pattern on a fabricated wafer for BJT, resistors and CMOS
inverter as they appear on a wafer when looked through a microscope. Also shown in Figure-5
(available in the lab) is the cross-sectional view of each device, which explains the details of
processing steps. Figure-7 (available in the lab) is a circuit diagram of uA741 operational
amplifier and its chip photograph is shown in Figure-8. In the chip photograph for uA741
operational amplifier the devices and components are labeled according to the circuit which will
be of help to physical recognize the devices on the chip.

EQUIPMENT

Nomarski microscope connected to TV screen through CCD camera. Roechester Institute of

Technology (RIT) masks and two wafers fabricated with these masks A commercially fabricated
wafer, and wafer fabricated in MSU, Mankato Microelectronics Lab.
PROCEDURE
1. Switch on all controls on the Nomarski microscope. The Lab instructor will show you the
operation of Nomarski microscope and its different features.
2. Examine the mask to locate alignment and resolution marks, any defect on mask,
manufacturer number etc.
3. Examine fabricated wafer and locate test structure, die, scribe lines, alignment and resolution
marks, resistances, capacitances and active devices such as MOS, BJTs. Also look for any
processing defects, e.g. broken line, twisted geometries, misalignment, voids in metal lines,
etc
4. Examine the wafers those are intentionally fabricated to give a better understanding of twisted
geometrys, misalignment and processing errors. Compare your findings with that of original
masks.
5. Write a report based on your observation and comment on the implications of these
errors/disturbances to the end product.

EE 304 Lab: Introduction to Solid State Devices

This week lab (September 26, 2002 Thursday) will be in
Surface Analysis Laboratory Located in Trafton North 193
(TRN-193)
All EE 304 Lab. Introduction to Solid State Devices
students are required to be in the lab by 2:00PM
Bring your notebook and take notes while the equipment
and measurements are explained to you.

EXPERIMENT 4
Current voltage characteristics of PN-junction, and calculations of diode parameters.
INTRODUCTION
Read Chapter 5 and 6 of the text book Semiconductor Device Fundamentals
by Robert Pierret
OBJECTIVES:
Forward characteristics of a PN-junction
Reverse Characteristics of a PN-junction
Find reverse saturation current
Find built-in Vbi voltage of a PN-junction
Find ideality factor n for a PN-junction
Identify and characterize R-G current (low level injection), quasi-ideal, high level
injection, and ohmic region
Become familiar and measure above parameters of PN-junction with HP 4155A
Semiconductor Parameter Analyzer, and Probe Station.
EQUIPMENT:
Semiconductor Parameter Analyzer HP 4155A
Three commercial diodes (silicon diode, germanium diode, and a Schottky diode), and
diode fabricated on a wafer in MSU Microelectronics Fabrication facility
Device under test (DUT) box
Probe Station
Special connecting wires for HP 4155A unit
Bring your Diskette for data storage
PROCEDURE:
1.
Get familiar with the operation of HP 4155A Semiconductor Parameter Analyzer
and the Probe station. Lab. Instructor will explain the operation of the HP 4155A
and the probe station
2.
Do a dummy test measurement on one of the diode before starting actual
experiment. Learn how to store data on your diskette and how to get a hard copy of the
plots from HP 4155A unit.
3. Get familiar with Probe station. It requires a lot of patience to probe a wafer. Lab
instructor will connect the wires to the probe station, put the wafer with IC chip on the
chuck, and guide you systematically in probing the wafer. Run a dummy test on the PNjunction on chip, before starting your actual measurements.
4. Put the diode in DUT box and adjust the sweep voltage on HP 4155A to get the forward
and reverse characteristics on each PN-junction, and also on the PN-junction fabricated
on a wafer.
5. You may store the data on your diskette for each PN-junction, and get a hard copy of the
characteristics using print command.
6. Using the IV-characteristics obtained in step 4, and plot Ln(I) vs. V on the Parameter
Analyzer for each diode. You may store the data on your diskette or make a hard copy of
the plot. Please note, the HP 4155A unit has capability of accurately measuring the slope
of different regions and intercepts of Ln(I) vs. V plot. Use this function to find the
slopes.

7. Run reverse bias measurements on the diodes. You have to select a reasonable value of
reverse voltage to obtain the characteristics for each PN-junction.
8. Assume concentration of dopants on p-side of PN-junction is ~ 1015/cm3.
TO BE REPORTED:
1.
Present IV and Ln (I) vs. V plot for each PN-junction. Make sure to include
discussion of comparison between theoretical expectations and experimental results.
2. Find the value of ideality factor for normal operating region, low injection level, R-G
region, high-level injection, ohmic region.
3. Estimate series resistance of the diode, dynamic resistance of the diode, and static
resistance of the PN-junctions.
4. Find reverse saturation current from forward characteristics of PN-junctions
5. Values calculated above can be used a PSPICE parameters of diode or not? Discuss!!
6. Find reverse saturation current, and estimate breakdown voltage from the reverse
characteristics. Compare this value with the that obtained in part (13)
7. Using the doping concentration given for the PN-junctions estimate doping concentration
on n-side of the junction. Calculate the depletion region width for each PN-junction,
when the PN-junction is forward biased and reverse biased.
8. Calculate the band gap of semiconductor used for each PN-junction
9. Calculate critical field ECR for the breakdown of the diode.
10. Estimate the multiplication factor from your data, and predict possible mechanism of
breakdown of the PN-junctions
11. Summarize the SPICE parameters obtained from the data for PN-junction in a table.
Compare these values with the specification sheet for each PN-junction.

Laboratory-5

There will be no Lab. Report due tomorrow for Lab-4 on PN-junction.

All students in EE 304 are requested to be in Analytical Lab located in
Trafton S-194 by 2:00PM
You will be helped to understand the calculations for Lab-4.
Bring your:

EE 303 book

EE 304 Notebook

Diskette on which you have stored the data of last week lab

Come prepared with your questions relating to calculations

We will discuss the data, and extraction of parameters from

the measurements.

EXPERIMENT 6 AND 7
Capacitance-voltage (CV) characteristics of a PN-junction. Parameters extraction from CVcharacteristics.
INTRODUCTION:
Read Chapter 7 of the text book Semiconductor Device Fundamentals
By Robert Pierret
OBJECTIVES:
Get familiar with CV-measurement system
Obtain CV-characteristics of PN-junction
From CV-characteristics extract diode (PN-junction) parameters for PSPICE model
Find built-in Vbi voltage of a PN-junction from CV-characteristics
Find doping profile of lightly doped side of the PN-junction
Determine the nature of PN-junction, i.e. value of grading coefficient m by determining
the junction is abrupt, or hyperabrupt, or linearly graded.
EQUIPMENT:
C-V-G meter HP 4280A
Three commercial diodes (silicon diode, germanium diode, and diode fabricated on a
wafer in MSU Microelectronics Fabrication facility
Device under test (DUT) fixture HP 4280A DUT
Probe Station
Connecting cables for HP 4280A
Bring your Diskette for data storage
PROCEDURE:
(FIRST WEEK OCTOBER 17, 2002 LAB)
1. Get familiar with the operation of HP 4280A C-V-G (capacitance-voltage-conductance)
meter, and operation of software that interfaces the computer with HP 4280A, and the
Probe station. Lab. Instructor will explain the operation of the HP 4280A and the probe
station
2.
Do a dummy test for CV-measurement on one of the diode before starting actual
experiment. Remember to sweep the voltage from negative value (e.g. -30V) to a small
positive value less than Vbi (why?) ~0.001V. Select small increment step (e.g. 0.1V or
less), this will give more test data and the plot will be a smooth curve.
3. Get familiar with Probe station. It requires a lot of patience to probe a wafer. Lab
Instructor will connect the wires to the probe station, put the wafer with IC chip on the
chuck, and guide you systematically in probing the wafer. Run a dummy test on the PNjunction on chip, before starting your actual measurements.
4. Put the diode in DUT fixture and adjust the sweep voltage in the dialog window of the
software. Enter the area of the diode by using diameter of diode pattern equal to 0.03cm,
i.e. calculate area (A) = r2 by using the diameter value. Execute linear CVcharacteristics. Remember not to run hysteresis.
5. Store the data on your diskette for each PN-junction
6. Use N(x) vs. X (doping concentration vs. distance) part of the program to generate a plot,
and store it on the diskette for comparison with your calculations.
7. Assume n-side of the junction is highly doped.
TO BE REPORTED:

(SECOND WEEK LAB ON OCTOBER 24, 2002)

9.
Present CV-plot for each PN-junction.
10. Present plot of (1/Cj 2) vs. applied reverse voltage (VA). From the plot find value of Vbi,
Cjo.
11. Use plot in step-2 to determine the value of m for each diode. The value of m will
determine the nature of PN-junction, i.e. abrupt, hyperabrupt, and linearly graded.
12. Use plot in step-2 to generate doping profile curve, i.e. N(x) vs. x(m) for each diode.
Compare the calculated doping profile with computer generated one obtained in step-6 of
the procedure. Comment on the uniformity of doping on lightly doped side. Why you
cannot obtain doping profile on highly doped side of the PN-junction?
13. The data obtained from CVG-meter has the conductance (G) value. Estimate the
diffusion capacitance, maximum frequency of operation of the diode, and estimate life
time of the minority carriers. Remember for minority carriers life time you have to
assume certain values.
14. Summarize the PSPICE model parameters; you have obtained so far on each diode.
15. Run a PSPICE program for each of the diode using the measured model parameters, and
a suitable width for a pulse as input to the diodes which can generate output similar to
Figure 8.5 of the textbook.
16. Use PSPICE probe output obtained in step-7 to calculate charge storage delay time for
each diode. You may use equation 8.8 of the textbook to calculate charge storage delay
time. The IF = VF/R, and IR = VR/R, where VF and IF are forward voltage and current
respectively, and VR and IR are reverse voltage and reverse current.
17. Submit PSPICE probe plot and calculations supporting your final parameter values with
the lab report.

EXPERIMENT 8 AND 9
Investigate the static current-voltage (IV) characteristics of Bipolar Junction Transistor (BJT)
INTRODUCTION:
Read Chapter 11 and 12 of the text book Semiconductor Device Fundamentals
By Robert Pierret
OBJECTIVES:
Get familiar with circuit configuration of BJT
Obtain IV-characteristics of npn-BJT, and pnp-BJT in normal mode and inverted mode
From IV-characteristics extract BJT parameters for PSPICE model
Find the current gain dc and its variation with collector current IC
Draw the Gummel plot, and characterize different injection levels (i.e. R-G component,
normal region, high-level injection)
EQUIPMENT:
Semiconductor Parameter Analyzer HP 4155A
Two commercial BJTs (2N3904 and 2N3906),
Device under test (DUT) box
Special connecting wires for HP 4155A unit
Bring your Diskette for data storage
C-V-G meter HP 4280A
PROCEDURE:
1. Get familiar with the operation of HP 4155A Parameter Analyzer, and its configuration
for BJT measurement. Instructor will explain the operation of the HP 4155A.
2. Do a dummy test for BJT - 2N3904 in normal mode (i.e. base-emitter junction forward
biased and collector-base junction reverse biased) using Parameter analyzer before
starting actual experiment. Use DUT box for BJT connection to the parameter analyzer.
3. Acquire and plot the common-emitter input characteristics (IB vs. VEB for commonemitter configuration, and IE vs. VEB for common-base configuration). Expand the
relevant portion of the characteristics to clearly exhibit the VCE dependence.
4. Acquire a plot of common-emitter output characteristics for the two BJTs. (Dont exceed
VCE = 30V)
5. Connect BJTs in the inverted mode (i.e. collector base forward biased, and emitter-base
reverse biased), and obtain the IV-characteristics for the two BJTs.
6. With VCE = 6V, obtain a simultaneous plot of log(IC) versus VBE and log(IB) versus VBE
similar to figure 11.15 on page 425 of the textbook (i.e. Gommel plot). The plot should
cover as large range in current as possible. Select compliance value in such a way that it
covers large current range, i.e. saturation of collector should reach.
7. Generate a plot from data obtained in step-6 of log (dc) versus log (IC) similar to the
figure 11.16 on page 425 of the textbook.
8. Obtain common-base IV-characteristics for one of the BJTs.
9. Use CV-measurement system (i.e. C-V-G meter HP 4280A) to find the collector-base
(Ccb) and emitter-base (Ceb) pn-junction capacitance.
TO BE REPORTED:
1. Present the plot for the two BJTs. Compare the plots for the two BJTs. Note major
similarities. Comment on minor variations. Are there significant differences, discuss and
quantify those from the characteristics?

2. As a part of above discussion, answer the following questions:

a. In the forward-active region of operation, what is the physical cause of upward
slope in common-emitter output characteristics
b. Why common-base output characteristics have negligible slope (i.e. upward
slope) compared to common-emitter characteristics.
c. Compare the inverted mode characteristics with normal mode characteristics.
What is the cause of lower collector-base efficiency? Discuss by mentioning
measured values from the characteristics
3. What is the cause of fall off in dc at low and high current level? Use of plot of log (dc)
versus log (IC).
4. From the Gummel Plot identify the R-G component, high-level injection, and normal
mode.
5. Find values of , dc, gm, , current crowding or rc, re, r, ro, r, and estimate the values of
ICBo, and ICEo, and Early voltage (VA) or base-width modulation from the output and input
IV-characteristics obtained in measurement section of the lab. Include the capacitances
Ccb and Ceb. Estimate C and C.

EXPERIMENT 10
Measurement of contact resistance, Schottky barrier height and doping concentration profile
from differential capacitance of a Schottky diode.
INTRODUCTION:
Read Chapter 14 of the text book Semiconductor Device Fundamentals
By Robert Pierret
OBJECTIVES:
Get familiar with CV-measurement system
Obtain CV-characteristics of Schottky diode
From CV-characteristics extract Schottky diode parameters for PSPICE model
Find built-in Vbi voltage of a Schottky diode from CV-characteristics
Find doping profile of a uniformly doped substrate by differential capacitance.
Find contact resistance, Schottky barrier height from CV-characteristics, and estimate
Richardsons constant from IV-characteristics.
EQUIPMENT:
C-V-G meter HP 4280A interfaced to PC
Semiconductor Parameter Analyzer HP 4155A
Device under test (DUT) box for Parameter Analyzer HP4155A
One commercial Schottky diode.
A p-Si <100> orientation wafer
Device under test (DUT) fixture HP 4280A DUT
Mercury Probe HG-102 MSI Electronics
Connecting cables for HP 4280A
Bring your Diskette for data storage
PROCEDURE:
10. Get familiar with the operation of HP 4280A C-V-G (capacitance-voltage-conductance)
meter, and operation of software that interfaces the computer with HP 4280A, and the
Probe station. Lab. Instructor will explain the operation of the HP 4280A.
11.
Do a dummy test for CV-measurement for a Schottky diode before starting
actual experiment.
12. Get familiar with the mercury probe and its connections to CVG meter. Test the mercury
dot with the help of transparent plate.
4. Put the commercial Schottky diode in DUT fixture and adjust the sweep voltage in the
dialog window of the software. Enter the area of the diode by using diameter of diode
pattern equal to 0.03cm, i.e. calculate area (A) = r2, where r is the radius of diode.
Execute linear CV-characteristics. Remember not to run hysteresis CV-characteristics.
8. Store the data on your diskette for the commercial Schottky diode
9. Use N(x) vs. X (doping concentration vs. distance) part of the program to generate a plot,
and store it on the diskette for comparison with your calculations.
10. Use Semiconductor Parameter Analyzer HP 4155A to obtain the forward and reverse
characteristics of the commercial diode. Store the data on the diskette.
11. Put P-Si wafer on the Mercury Probe. Make sure that the polished side of the wafer is in
contact with the mercury dot. Lab instructor will show you the operation of the Mercury
probe.

12. Repeat measurements performed in step-4 to step-7 for the P-Si wafer, and store the data
on diskette.
TO BE REPORTED:
18. Present CV-plot for the commercial Schottky diode and Schottky diode obtained by
mercury dot contact with P-Si.
19. Present plot of (1/Cj 2) vs. applied reverse voltage. From the plot find value of Vbi, barrier
height, and work function of metal.
20. Use plot in step-2 to generate doping profile curve, i.e. N(x) vs. x(m) for the
commercial Schottky diode, and the Schottky diode made from mercury diode and P-Si.
Compare the calculated doping profile with computer generated one obtained in step-6 of
the procedure. Comment on the uniformity of doping on lightly doped side.
21. Compare doping concentration measured for P-Si wafer with the data of the P-Si wafer.
22. From IV-characteristics find the built in voltage and compare it with a PN-juntion
(diode). Why the two built in voltages are different? Explain with reference to
mechanism of operation of Schottky diode and PN-junction diode.
23. For the commercial Schottky diode and mercury dot to P-Si Schottky diode plot ln (I) vs.
applied voltage. From the plot find reverse saturation current (IS), emission coefficient
n, and find diffusion (IDiff) and recombination-generation (IR-G) current flowing through
the Schottky diode.
24. Find Richardson constant from IV-characteristics, and contact resistance.
25. Summarize the PSPICE model parameters; you have obtained so far on each diode.