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EC
ED
EC
ED
EG
EG
T=0K
EV
x
valence electrons
1
E EF
f donor 1 exp D
k BT
2
nD N D f donor
T>0K
EV
holes
ED EF
;
1
4
exp
f
acceptor
k BT
Doped Semiconductors
conducting electrons
E
EC
ED
neutral
donors
EC
ED
EG
T=0K
EV
valence electrons
ionized
donors
EG
Nd
T>0K
EV
conducting
electrons
k BT
EC EF
N D exp
k BT
1<g<4 and
exp (Ec-EF) >>1
2
n
ni N D ; nn N D ; pn i ;
ND
NC
N D
kT ln
EC EF Ei kT ln
ni
ND
An approximation for shallow donors, EC-ED < 2 kT
4
n ni nD ; ni 10 cm N D
10
Ec
ED
EF
EC ED
nD N D exp
; EF EC ED / 2
2 k BT
0.02
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17
10
10 exp
0.68
2 0.026
EV
Conductivity
(a) A photon with an energy greater than Eg can excite an electron from the
VB to the CB. (b) When a photon breaks a Si-Si bond, a free electron and a
hole in the Si-Si bond is created. In an intrinsic semiconductors, n=p.
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Non-equilibrium Carriers in
Doped Semiconductors
Low level carrier
photo-generation in an
n-type semiconductor
in which nphoto< nD
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Non-equilibrium Carriers in
Doped Semiconductors
Low level injection
in an n-type
semiconductor does
not affect majority
carrier concentration
nn but drastically
affects the minority
carrier concentration
pn.
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Non-equilibrium Carriers in
Doped Semiconductors
Non-equilibrium Carriers in
Doped Semiconductors
Non-equilibrium Carriers in
Semiconductors: Quasi-Fermi level
Under conditions different than thermal equilibrium
(light, strong electric field, etc.), carrier concentration
and energy distribution no longer solely depends on
temperature. New Fermi level for each type of charge
carrier (electrons and holes) can be established (quasiFermi level). The quasi-Fermi levels for electrons and
holes, EFn and EFp, are not in general equal (i.e.,
independent from each other). To find them, we usually
begin with n(E) and p(E), and write them in terms of the
conduction and valence band densities of states and the
quasi-Fermi levels EFn and EFp.
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Non-equilibrium Carriers in
Semiconductors: Quasi-Fermi level
However, the electron population is near equilibrium
within the conduction energy band, and the hole
population is near equilibrium within the valence energy
band. Thus, the population of electrons over the
conduction band states, if ne< NC, follows MB statistics,
where EFn is electron quasi-Fermi energy level:
EC EFn
n( E ) N C exp
kT
NC
and EFn ( E ) EC kT ln
(
)
n
E
17
Carriers in Semiconductors:
Summary and Control Questions
Find Fermi energy level (or just Fermi level) in an
(a) Intrinsic (or undoped) semiconductor
(b) P-type semiconductor
(c) N-type semiconductor
(d) Degenerate semiconductor
(e) Compensated semiconductors (NDNA)
How about dark and under illumination? Is MB
statistic still applicable?
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Conduction
band
Energy
gap
Valence
band
Eg
Eg
HH
LH
Split off
HH
LH
Split off
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E
photon
hv
Eg
phonon
HH
LH
Split off
HH
LH Split off
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Direct,
GaAs, III-V
Indirect,
Si, Ge
k
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V
I ;E V / x
R
vdr
1
; J E; endr en
E
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27
Carrier Diffusion
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Carrier Diffusion
Dn
k BT
n ; vdrif t n E ;
q
q V cm 2 cm 2
v cm 2
n
; Dn
s
E Vs
Q
V
s
29
vdrift E
vdrift vthermal
107 cm / s
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n, p
q n , p
*
n, p
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Double log plot of drift mobility vs temperature for n-type Ge and n-type
Si samples. Various donor concentrations for Si are shown. The upper right
inset is the simple theory for lattice limited mobility whereas the lower left
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inset is the simple theory for impurity scattering limited mobility.
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Eg
n p n N C NV exp
kT
Eg
n N C NV exp
2kT
2
i
E g EF
N C NV exp
kT
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