Lab 7 Report

Design of a BJT Operational Transconductance

Amplifier
Kevin Bradshaw & Kai Qin
ECEN 326-502
Instructor: Sebastian Hoyos
Date Performed: March 24, 2016

Objectives
Understand the characteristics of a transconductance amplifier.
Design and analyze a BJT amplifier meeting certain constraints.
Evaluate the DC operating point of each transistor in each part of the circuit.
Procedure
In this lab, the BJT amplifier circuit designed from the pre-lab was constructed. The
amplifier was designed to fit the following constraints shown in Figure 1.

Figure 1: BJT Operational Transconductance Constraints

Using a chosen value for the middle tail current, the small signal parameters were
calculated for each transistor. Then the current source was calculated by starting with a
small value for RB3 and a voltage ratio for RB1 and RB2. Both RE1 resistors were
calculated by the differential input maximum specification. Both RE2 resistors were
calculated by using the minimum and maximum values for the common mode voltage.
Both RE3 resistors were calculated by setting them equal to RE2. Lastly, RE4 was a low
assumed value. With these resistor values, the input and output resistances were then
calculated for the entire system. Figure 2 shows the resulting circuit designed and Table
1 shows the actual values used in the circuit.
The operating currents and voltages were measured and can be seen in Table 2.
Furthermore, the input resistance, current supply, and transconductance were
measured and can be seen in Table 3. The transconductance for the circuit itself can be
seen in Figure 3. The maximum input linear range can be seen in Figure 4. Lastly, the
transconductance of the OTA with an input filter and feedback can be seen in Figure 5.

Figure 2: BJT Operational Transconductance Amplifier Circuit

Figure 3: Transconductance

Figure 4: Input Linear Range Maximum

Figure 5: Input and Output Voltages of an OTA with Feedback

Data Tables
Table 1: Measured Current Values
Parameter

Value

I5

1.03 mA

I3

1.14 mA

I4

1.137 mA

I6

1.035 mA

IT

2.31 mA

Isupply

4.342 mA

Table 2: Measured Transistor Bias Points

BJT

VCE

VBE

Q1

3.84 V

0.64 V

Q2

3.84 V

0.65 V

Q3

0.65 V

0.65 V

Q4

0.655 V

0.65 V

Q9

2.62 V

0.668 V

Table 3: Measured Amplifier Parameters

Parameter

Value

Transconductance, Gm

2 mA/V

Differential Input Voltage Maximum, Vidmax

2.4 V

Input Resistance

583.58 k

Transconductance (Gm)

0.667 mA/V

VCM maximum

3.80 V

VCM minimum

-3.21 V

Discussion
The circuit we built in this lab met all the given specifications. We had a
transconductance of 2 mA/V which is higher than the required 1 mA/V.
Conclusion
From this lab, we have a better understanding of the characteristics of a BJT
Operational Transconductance Amplifier, and we became more familiar with the
procedures of how to design and analyze output waveforms to meet given constraints of
transconductance. Also, we have learnt how to calculate DC Biasing for an
asymmetrical circuit topology.