DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2415, 2SK2415-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION

PACKAGE DIMENSIONS

The 2SK2415 is N-Channel MOS Field Effect Transistor designed

+ 0.2
1.5 0.1

(in millimeters)

for high voltage switching applications.

6.5 0.2
5.0 0.2

FEATURES

RDS(on)2 = 0.15 MAX. (@ VGS = 4 V, ID = 4.0 A)

Ciss = 570 pF TYP.

1 2 3

1.3 MAX.

QUALITY GRADE
2.3 2.3

Drain Current (DC)

ID(DC)

8.0

Drain Current (pulse)*

ID(pulse)

32

Total Power Dissipation (Tc = 25 C)

PT1

20

Total Power Dissipation (Ta = 25 C)

PT2

1.0

Channel Temperature

Tch

150

Storage Temperature

Tstg

1.3 MAX.

1 2

2.3 2.3

IAS

8.0

Single Avalanche Energy**

EAS

6.4

mJ

0.9

0.8

MAX.

MAX.

0.8

1.
2.
3.
4.

55 to +150 C

Single Avalanche Current**

1.0 MIN.
1.5 TYP.

20

5.5 0.2

VGSS

0.5 0.1

10.0 MAX.

Gate to Source Voltage

2.3 0.2

MIN.

12.0

60

0.8 4.3 MAX.

5.0 0.2

+ 0.2
1.5 0.1

6.5 0.2

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)

VDSS

Gate
Drain
Source
Fin (Drain)

TO-251 (MP-3)

tions.

Drain to Source Voltage

1.
2.
3.
4.

0.75

Please refer to "Quality grade on NEC Semiconductor Devices" (Document

number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-

0.6 0.1

0.6 0.1

Standard

0.5

Low Ciss

7.0 MAX. 5.5 0.2

13.7 MIN.

RDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID = 4.0 A)

0.5 0.1

1.6 0.2

Low On-Resistance

2.3 0.2

Gate
Drain
Source
Fin (Drain)

TO-252 (MP-3Z)
Drain

PW 10 s, Duty Cycle 1 %

** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0

Gate

Body
Diode

Gate Protection
Diode
Source

The information in this document is subject to change without notice.

Document No. D13207EJ1V1DS00 (1st edition)
(Previous No. TC-2496)
Date Published December 1997 N CP(K)
Printed in Japan

1994

2SK2415, 2SK2415-Z
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Drain to Source On-State Resistance

RDS(on)1

0.07

0.10

VGS = 10 V, ID = 4.0 A

Drain to Source On-State Resistance

RDS(on)2

0.10

0.15

VGS = 4 V, ID = 4.0 A

Gate to Source Cutoff Voltage

VGS(off)

1.0

1.6

2.0

VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs |

5.0

8.4

VDS = 10 V, ID = 4.0 A

Drain Leakage Current

IDSS

10

VDS = 60 V, VGS = 0

Gate to Source Leakage Current

IGSS

10

VGS = 20 V, VDS = 0

Input Capacitance

Ciss

570

pF

VDS = 10 V

Output Capacitance

Coss

290

pF

VGS = 0

Reverse Transfer Capacitance

Crss

75

pF

f = 1 MHz

Turn-On Delay Time

td(on)

ns

ID = 4.0 A

Rise Time

tr

60

ns

VGS(on) = 10 V

Turn-Off Delay Time

td(off)

75

ns

VDD = 30 V

Fall Time

tf

40

ns

RG = 10

Total Gate Charge

QG

21

nC

ID = 8.0 A

Gate to Source Charge

QGS

2.0

nC

VDD = 48 V

Gate to Drain Charge

QGD

6.5

nC

VGS = 10 V

Body Diode Forward Voltage

VF(S-D)

1.0

IF = 8.0 A, VGS = 0

Reverse Recovery Time

trr

85

ns

IF = 8.0 A, VGS = 0

Reverse Recovery Charge

Qrr

200

nC

di/dt = 100 A/s

Test Circuit 1 Avalanche Capability

D.U.T.
RG = 25
PG

D.U.T.

50

VGS = 20 0 V

Test Circuit 2 Switching Time

RL

VDD

BVDSS

IAS

VDS

ID

RG
RG = 10

PG.

VGS
0

Starting Tch

Wave
Form

VGS (on)

10 %
0

90 %

90 %

ID

Wave
Form

t = 1 s
Duty Cycle 1 %

VGS

VDD

ID
t

VDD

VGS

90 %

ID

10 %
0

10 %

td (on)

tr
ton

td (off)

tf
toff

Test Circuit 3 Gate Charge

PG.

D.U.T.
IG = 2 mA

RL

50

VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2SK2415, 2SK2415-Z
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

PT - Total Power Dissipation - W

24

80

60

40

20

20

40

60

80

100 120

140

12
8
4

20

40

60

80

100 120

140

FORWARD BIAS SAFE OPERATING AREA

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

PW

ID (pulse)

ID - Drain Current - A

16

Tc - Case Temperature - C

100

d
ite )
im 0 V
L
ID (DC)
1
n)
(o S =
Po
G
DS
R tV
we
(a
r

10

160

20

Tc - Case Temperature - C

40
=

10

10

s
10
m
s
Di DC
ss
ipa
tio
n
Lim

ite

ID - Drain Current - A

dT - Percentage of Rated Power - %

100

160

Pulsed
VGS = 10 V

32

VGS = 6 V
24
VGS = 4 V
16

TC = 25 C
Single Pulse

0.1
0.1

10

100

VDS - Drain to Source Voltage - V

VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

ID - Drain Current - A

1000

Pulsed
VDS = 10 V

100

Ta = - 25 C
25 C
125 C

10

VGS - Gate to Source Voltage - V

2SK2415, 2SK2415-Z

rth(t) - Transient Thermal Resistance - C/W

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
Rth(ch-a) = 125 C/W
100

10
Rth(ch-c) = 6.25 C/W
1

0.1
Single Pulse
0.01

10

100

1m

10 m

100 m

10

100

1000

100

10

VDS = 10 V
Pulsed

Ta = - 25 C
25 C
75 C
125 C

RDS(on) - Drain to Source On-State Resistance - m

0.1

10

100
80
ID = 4.0 A

60
40
20

10

15

25

20

GATE TO SOURCE CUTOFF VOLTAGE vs.

CHANNEL TEMPERATURE

140
120
VGS = 4 V

80
VGS = 10 V
60
40
20
1

10
ID - Drain Current - A

Pulsed
120

DRAIN TO SOURCE ON-STATE

RESITANCE vs. DRAIN CURRENT
Pulsed

140

VGS - Gate to Source Voltage - V

160

100

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

ID - Drain Current - A

100

VGS(off) - Gate to Source Cutoff Voltage - V

IyfsI- Forward Transfer Admittance - S

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

RDS(on) - Drain to Source On-State Resistance - m

PW - Pulse Width - s

2.0
VDS = 10 V
ID = 1 mA
1.5

1.0

0.5

0
- 50 - 25

25

50

75

100

125

Tch - Channel Temperature - C

150

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

180

100

160

ISD - Diode Forward Current - A

140
120

VGS = 4 V

100
VGS = 10 V

80
60
40

Pulsed

10
10 V

VGS = 0

20
ID = 4.0 A

0
- 50

50

100

1.0

150

VSD - Source to Drain Voltage - V

Tch - Channel Temperature - C

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

SWITCHING CHARACTERISTICS

10 000

1 000
VGS = 0
f = 1 MHz

td(on), tr, td(off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

2.0

1 000
Ciss

Coss
100
Crss

100

td(off)

tf

tr

10

td(on)
VDD = 30 V
VGS = 10 V
RG = 10

1.0

10
1

10

100

0.1

1.0

VDS - Drain to Source Voltage - V

10

ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
80

VDS - Drain to Source Voltage - V

trr - Reverse Recovery time - ns

100

di/dt = 50 A/ s
VGS = 0

10
0.1

1.0
ID - Drain Current - A

100

ID = 8.0 A
VDD = 48 V

70
60
50

14
12

VGS

VDS

16

10

40

30

20

10

VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-State Resistance - m

2SK2415, 2SK2415-Z

0
10

10

20

30

40

Qg - Gate Charge - nC

2SK2415, 2SK2415-Z

SINGLE AVALANCHE ENERGY vs.

INDUCTIVE LOAD

SINGLE AVALANCHE ENERGY

DERATING FACTOR

10

100

IAS = 8.0 A
EAS

=6

.4 m

1.0
VDD = 30 V
VGS = 20 V 0
0.1 RG = 25
10
100

VDD = 30 V
RG = 25
VGS = 20 V 0
IAS 8.0 A

80

60

40

20

0
1m

L - Inductive Load - H

dt - Energy Derating Factor - %

IAS - Single Avalanche Energy - mJ

100

10 m

25

50

75

100

125

150

Starting Tch - Starting Channel Temperature - C

2SK2415, 2SK2415-Z
REFERENCE
Document Name

Document No.

NEC semiconductor device reliability/quality control system.

TEI-1202

Quality grade on NEC semiconductor devices.

IEI-1209

Semiconductor device mounting technology manual.

IEI-1207

Semiconductor device package manual.

IEI-1213

Guide to quality assurance for semiconductor devices.

MEI-1202

Semiconductor selection guide.

MF-1134

Power MOS FET features and application switching power supply.

TEA-1034

Application circuits using Power MOS FET.

TEA-1035

Safe operating area of Power MOS FET.

TEA-1037

The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.

2SK2415, 2SK2415-Z
[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5