CHARACTERISTICS OF SPECIAL DEVICES-UJT

Aim:

Study the operation and working principle of UJT and plot the characteristics.

Apparatus:
Regulated Power Supply
DC Ammeter
DC Voltmeter
UJT
Resistors
Bread Board
Connecting Wires

(0-30) V
(0-200) mA
(0-20)V
2N 2646

1 No
1 No
2No
1No
1 No
1 No

Circuit Diagram:

Theory:
UJT is a 3 terminal semiconductor switching device. As it has one PN junction it is called
as Uni junction transistor. It consists of a lightly doped N-type Silicon bar with a heavily doped
p-type material alloyed to its one side closer to B2 for producing single PN Junction. The UJT
Uni-junction Transistor (UJT) has three terminals, an emitter (E) and two bases (B1 and B2). The
base is formed by lightly doped n-type bar of silicon. Two ohmic contacts B1 and B2 are
attached at its ends. The emitter is of p-type and it is heavily doped. The resistance between B1
and B2, when the emitter is open-circuit is called inter base resistance. The original uni-junction
transistor, or UJT, is a simple device that is essentially a bar of N type semiconductor material
into which P type material has been diffused somewhere along its length. The 2N2646 is the
most commonly used version of the UJT.
Characteristics of UJT:
It consists of 2 resistors one fixed and one variable and a single diode. The total
resistance will be given as RBB = RB1 + RB2 called as inter base resistance.
Base2 terminal is made positive w r t base1 by V BB volts. Application of fixed VBB will create the
voltage drop across base1 given by VRB1= ( RB1 VBB) / (RB1 + RB2)
= ( RB1) / (RB1 + RB2) is called intrinsic standoff ratio. The diode D in the equivalent circuit is
reverse biased by the voltage of VRB1 .The diode will be turned on if the input voltage i.e. V E is
greater thanVRB1. And forward voltage drop of diode VE = = VBB+ VD = VRB1+ VD

When the diode turns on IE current begins to flow through RB1.When the PN junction diode is
turned on the hole from P-type Aluminum rod enters in the N-type Si Slab and get attracted
towards the negative terminal of base supply i.e. current now starts flowing through R B1 The
increased hole current in the N-type material will result in an increase in the no of free electrons
in slab producing an increase in conductivity and corresponding decrease in resistance. As the
diode turns on, conductivity of RB1 increases which increases the current decreases the voltage
drop across RB1.This behavior where for increasing value of current, the voltage drops decreases
is called negative resistance region.
Procedure:
1.
2.
3.
4.
5.

Make the connections as per the circuit diagram.

Keep VBB at ______________ and _______________
By varying VEB note the corresponding change in IE .
Vary VBB to another value and repeat step 3.
Draw the graph for the different values of VEB (V) and IE (mA) by taking VEB on y-axis
and IE on x-axis.

Tabular column:
VEE (V)

VBB =
Constant
VEB (volts)
IE (mA)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10

VEE (V)

VBB =
VEB (volts)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10

Constant
IE (mA)
Expected
Graph:

Result:
Thus
VI

characteristics have been plotted and negative resistance region with peak and valley voltages are
observed.
Vp =
Vv =
VIVA QUESTIONS:
1. What is the symbol of UJT?
2. Draw the equivalent circuit of UJT?
3. What are the applications of UJT?
4. Formula for the intrinsic stand off ratio?
5. What does it indicates the direction of arrow in the UJT?
6. What is the difference between BJT and UJT?
7. Is UJT is used an oscillator? Why?
8. What is the Resistance between B1 and B2 is called as?
9. What is its value of resistance between B1 and B2?
10. Draw the characteristics of UJT?