Anpec Electronics Corporation Apm4115pu E9dfa47844

APM4115PU
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-40V/-45A,
RDS(ON)= 12.5m (typ.) @ VGS=-10V
D
G
RDS(ON)= 18.5m (typ.) @ VGS=-4.5V
Super High Dense Cell Design
Reliable and Rugged
Top View of TO-252-3
Lead Free and Green Devices Available (RoHS

S
Compliant)
Applications
Power Management in LCD TV Inverter

D
P-Channel MOSFET
Ordering and Marking Information

Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM4115P
Assembly Material
Handling Code
Temperature Range
Package Code
APM4115P U :
XXXXX - Date Code
APM4115P
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2009
Downloaded from DatasheetLib.com - datasheet search engine
www.anpec.com.tw
APM4115PU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25C Unless Otherwise Noted)

VDSS
Drain-Source Voltage
-40
VGSS
Gate-Source Voltage
20
Maximum Junction Temperature
150
-55 to 150
TC=25C
-20
TC=25C
-90
TC=100C
-60
TC=25C
-45
TC=100C
-30
TC=25C
50
TC=100C
20
TJ
TSTG
Storage Temperature Range
*
IS
Diode Continuous Forward Current
IDP
ID
300s Pulse Drain Current Tested
PD
Continuous Drain Current
RJC
Maximum Power Dissipation

*
*
RJA
Thermal Resistance-Junction to Case
2.5
C/W
Thermal Resistance-Junction to Ambient
50
C/W
Notes: * Surface Mounted on 1in pad area, t 10 sec.

2
Electrical Characteristics
(TA = 25C unless otherwise noted)

APM4115PU
Symbol
Parameter
Test Conditions
Unit
Min.
Typ.
Max.
-40
-1
-30
-1.5
-2
-2.5
V
nA
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VGS=0V, IDS=-250A
VDS=-32V, VGS=0V
TJ=85C
V
A
Gate Threshold Voltage
VDS=VGS, IDS=-250A
Gate Leakage Current
VGS=20V, VDS=0V
100
VGS=-10V, IDS=-20A
12.5
15.5
VGS=-4.5V, IDS=-10A
18.5
24.5
ISD=-20A, VGS=0V
-0.75
-1.1
28
ns
26
nC
Drain-Source On-state Resistance
Diode Characteristics
a
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge

Rev. A.1 - Jul., 2009
ISD=-20A, dlSD/dt=100A/s
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APM4115PU
Electrical Characteristics (Cont.)
(TA = 25C unless otherwise noted)

APM4115PU
Symbol
Parameter
Dynamic Characteristics
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-20V,
Frequency=1.0MHz
VDD=-20V, RL=20,
IDS=-1A, VGEN=-10V,
RG=6
Turn-off Fall Time
Gate Charge Characteristics

Qg
Min.
Typ.
Max.
2800
320
220
11
21
75
135
89
161
35
64
40
56
12
Unit
RG
tf
Test Conditions
Gate-Source Charge
Qgd
Gate-Drain Charge
pF
ns
Total Gate Charge
Qgs
VDS=-20V, VGS=-10V,
IDS=-20A
nC
Note a : Pulse test ; pulse width300s, duty cycle2%.

Note b : Guaranteed by design, not subject to production testing.

Rev. A.1 - Jul., 2009
www.anpec.com.tw
APM4115PU
Typical Operating Characteristics
Power Dissipation
Drain Current
50
60
50
-ID - Drain Current (A)
40
Ptot - Power (W)
40
30
20
30
20
10
10
TC=25 C,VG=-10V
TC=25 C
0
20
40
60
80 100 120 140 160 180
20
60
80 100 120 140 160
T - Junction Temperature (C)
T - Junction Temperature (C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
200
100
Lim
it
1ms
Rd
s(o
n)
40
10
10ms
100ms
1s
DC
TC=25 C
0.1
0.01
0.1
10
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)

Rev. A.1 - Jul., 2009
Duty = 0.5
Mounted on 1in pad

o
RJA :50 C/W
1E-3
0.01
0.1
10
100
Square Wave Pulse Duration (sec)
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APM4115PU
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
100
35
-5V
80
RDS(ON) - On - Resistance (m)
90
40
VGS=-6,-7,-8,-9,-10V
70
-4.5V
60
50
40
-4V
30
20
-3.5V
30
VGS=-4.5V
25
20
VGS=-10V
15
10
5
10
-3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
20
40
60
Gate Threshold Voltage

IDS =-250A
ID= -20A
1.4
35
Normalized Threshold Voltage
RDS(ON) - On - Resistance (m)
100
1.6
40
30
25
20
15
10
5
80
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10
-VGS - Gate - Source Voltage (V)

Rev. A.1 - Jul., 2009
25
50
75
100 125 150
Tj - Junction Temperature (C)
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APM4115PU
Typical Operating Characteristics (Cont.)
Source-Drain Diode Forward
2.0
IDS = -20A
1.6
o
-IS - Source Current (A)
Normalized On Resistance
1.8
100
VGS = -10V
1.4
1.2
1.0
0.8
0.6
10
Tj=25 C
0.4
1
0.2
0.0
-50 -25
RON@Tj=25 C: 12.5m
0
25
50
75
0.5
0.0
100 125 150
0.6
0.9
1.2
1.5
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
VDS= -20V
-VGS - Gate-source Voltage (V)
3200
2800
Ciss
2400
2000
1600
1200
800
Coss
400
10
15
20
25
30
35
8
7
6
5
4
3
2
40

Rev. A.1 - Jul., 2009
ID= -20A
Crss
5
1.8
10
Frequency=1MHz
0
0
0.3
Tj - Junction Temperature (C)
3600
C - Capacitance (pF)
Tj=150 C
10
15
20
25
30
35
40
QG - Gate Charge (nC)
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APM4115PU
Package Information
TO-252-3
E
A
E1
c2
L4
D1
L3
b3
SEE VIEW A
GAUGE PLANE
SEATING PLANE
0.25
A1
L
VIEW A
TO-252-3
S
Y
M
B
O
L
MIN.
MAX.
MIN.
MAX.
2.18
2.39
0.086
0.094
MILLIMETERS
INCHES
0.005
0.13
A1
b
0.50
0.89
0.020
0.035
b3
4.95
5.46
0.195
0.215
0.46
0.61
0.018
0.024
c2
0.46
0.89
0.018
0.035
5.33
6.22
0.210
0.245
D1
4.57
6.00
0.180
0.236
6.35
6.73
0.250
0.265
E1
3.81
6.00
0.150
0.236
2.29 BSC
0.090 BSC
9.40
10.41
0.370
0.410
0.90
1.78
0.035
0.070
L3
0.89
2.03
0.035
0.080
L4
0
0.040
1.02
0
Note : Follow JEDEC TO-252 .

Rev. A.1 - Jul., 2009
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APM4115PU
Carrier Tape & Reel Dimensions
P0
P2
P1
B0
E1
OD0
K0
A0
OD1 B
SECTION A-A
SECTION B-B
H
A
T1
Application
330.02.00 50 MIN.
TO-252-3
P0
4.00.10
T1
P1
8.00.10
E1
16.4+2.00 13.0+0.50
-0.00
-0.20 1.5 MIN. 20.2 MIN. 16.00.30 1.750.10 7.500.05
P2
D0
2.00.05
1.5+0.10
-0.00
D1
1.5 MIN.
A0
B0
K0
0.6+0.00
-0.40 6.800.20 10.400.20 2.500.20
(mm)
Devices Per Unit

Package Type
TO-252-3
Unit
Tape & Reel

Rev. A.1 - Jul., 2009
Quantity
2500
www.anpec.com.tw
APM4115PU
Taping Direction Information
TO-252-3
USER DIRECTION OF FEED
Classification Profile

Rev. A.1 - Jul., 2009
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APM4115PU
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 C
150 C
60-120 seconds
150 C
200 C
60-120 seconds
3 C/second max.
3C/second max.
183 C
60-150 seconds
217 C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5C of the specified

classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak

Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time 25C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process Classification Temperatures (Tc)

3
Package
Volume mm
Thickness
<350
<2.5 mm
235 C
2.5 mm
Volume mm
350
220 C
220 C
220 C
Table 2. Pb-free Process Classification Temperatures (Tc)

Package
Thickness
<1.6 mm
1.6 mm 2.5 mm
2.5 mm
Volume mm
<350
260 C
260 C
250 C
Volume mm
350-2000
260 C
250 C
245 C
Volume mm
>2000
260 C
245 C
245 C
Reliability Test Program

Test item
SOLDERABILITY
HOLT
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104

Rev. A.1 - Jul., 2009
10
Description
5 Sec, 245C
1000 Hrs, Bias @ 125C
168 Hrs, 100%RH, 2atm, 121C
500 Cycles, -65C~150C
www.anpec.com.tw
APM4115PU
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

Rev. A.1 - Jul., 2009
11
www.anpec.com.tw

Anpec Electronics Corporation Apm4115pu E9dfa47844

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APM4115PU

P-Channel Enhancement Mode MOSFET

RDS(ON)= 18.5m (typ.) @ VGS=-4.5V

Super High Dense Cell Design

Reliable and Rugged

Top View of TO-252-3

Lead Free and Green Devices Available (RoHS

Power Management in LCD TV Inverter

Ordering and Marking Information

XXXXX - Date Code

Downloaded from DatasheetLib.com - datasheet search engine

Common Ratings (TA=25C Unless Otherwise Noted)

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

300s Pulse Drain Current Tested

Continuous Drain Current

Maximum Power Dissipation

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

Notes: * Surface Mounted on 1in pad area, t 10 sec.

(TA = 25C unless otherwise noted)

Zero Gate Voltage Drain Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state Resistance

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Copyright ANPEC Electronics Corp.

Downloaded from DatasheetLib.com - datasheet search engine

(TA = 25C unless otherwise noted)

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

Note a : Pulse test ; pulse width300s, duty cycle2%.

Copyright ANPEC Electronics Corp.

Downloaded from DatasheetLib.com - datasheet search engine

-ID - Drain Current (A)

Ptot - Power (W)

80 100 120 140 160 180

80 100 120 140 160

T - Junction Temperature (C)

T - Junction Temperature (C)

Safe Operation Area

Thermal Transient Impedance

Normalized Transient Thermal Resistance

-ID - Drain Current (A)

Downloaded from DatasheetLib.com - datasheet search engine

-VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Mounted on 1in pad

Square Wave Pulse Duration (sec)

-ID - Drain Current (A)

RDS(ON) - On - Resistance (m)

-VDS - Drain - Source Voltage (V)

-ID - Drain Current (A)

Gate Threshold Voltage

Normalized Threshold Voltage