VLSI Design

Introduction to Digital Integrated

Circuits
Dr. Imran Khan
Lecture 3

University of Engineering and Technology

Taxila
31 August 2016

VLSI Design

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Outline
CMOS Transistor Models
BSIM Model
VLSI Design Flow

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CMOS transistors
3 terminals in CMOS transistors:
G: Gate
D: Drain
S: Source

nMOS transistor/switch
X=1 switch closes (ON)
X=0 switch opens (OFF)

pMOS transistor/switch
X=1 switch opens (OFF)
X=0 switch closes (ON)
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Multi-gate MOSFET and FinFET

The way of eliminating deep leakage paths is to provide gate
control from more than one side of the channel.
The Si film is very thin so that no leakage path is far from one
of the gates.
Because there are more than one gates, the structure may be
called multi-gate MOSFET.

Source

Tox

Gate 1

Vg

Si

Drain

TSi

Gate 2

double-gate MOSFET
VLSI Design

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Various Multi-gate Transistor Architectures

Supported in BSIM-CMG

VLSI Design

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Variations of FinFET

Short
FinFET

Tall
FinFET

Nanowire
FinFET

Tall FinFET has the advantage of providing a large W and therefore

large Ion while occupying a small footprint.
Short FinFET has the advantage of less challenging lithography and
etching.
Nanowire FinFET gives the gate even more control over the silicon
wire by surrounding it.
VLSI Design

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BSIM family of compact transistor models

developed by UC Berkeley
BSIM stands for Berkeley Short Channel IGFET Model. Developed by UC
Berkeley in 1990.

VLSI Design

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Summary
Digital integrated circuits have come a long
way and still have quite some potential left for
the coming decades
Some interesting challenges ahead

Getting a clear perspective on the challenges

Understanding the design metrics that govern

digital design is crucial
Cost, reliability, speed, power and energy
dissipation

VLSI Design

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