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3 Semiconductors
Chap.3 Semiconductors
i) Introduction
Silicon is Semiconductor and is the base material for Integrated Circuits
i) Introduction
Silicon is Semiconductor and is the base material for Integrated Circuits
i) Introduction
Silicon is Semiconductor and is the base material for Integrated Circuits
Figure A.5 A modern twin-well CMOS process flow with shallow trench isolation
(STI).
LAYOUT :
Cross-sectional
View:
PN Junction Diode
Anode
Cathode
Outermost = 4 es
Outermost
= 8 es
sketch in 2D
Sketch in 3D
T=0K
T=300K
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Donor
p-type
Acceptor
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n-type
Donor
p-type
p-type
Acceptor
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p-type: The acceptor impurity concentration NA dominates the intrinsic carrier concentration ni.
NA >> ni.
majority carrier p NA
Ex) p-type Si doped to NA=3x1015cm-3, has p=3x1015 cm-3.
Under thermal equilibrium, the product of n and p is constant, independent of type or doping
concentration:
np = ni2
Majority carrier density = doping level. Minority density = ni2/[majority density]
Ex) n-type doped to ND=1016 cm-3. Find n and p ?
Ans) n=1016 cm-3; p=ni2/n = (1.5x1010 cm-3)2/1016cm-3 = 2.25x104 cm-3.
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13
14
VB
n = p = ni
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- Extrinsic silicon
n-type:
Donor Impurity
n=ND
(majority carrier)
minority holes
p=ni2/ND
p-type:
p=NA
gap
Acceptor Impurity
(majority carrier)
Energy Band
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k=8.62E-5 eV/K
5.9E7 cm-3
(5.9E7)2
0.035
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I
I
wire
Silicon Device
P-type
Drift of
Holes
Diffusion
of Electrons
N-type
I
wire
Drift of
Electrons
Diffusion
of Holes
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(electron)
(n)
(electron)
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20
20
21
21
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P 3.10) Holes are being steadily injected into a region of n-type silicon. In the steady state,
Find the density of (hole diffusion) current for the excess-hole concentration profile shown
below. Here, pn0=hole concentration in thermal-equilibrium, ND=1016/cm3, ni=1.5x1010/cm3,
Dp=12 cm2/s, and W=50nm.
P 3.11) Both carrier mobility and diffusivity decrease as the doping concentration increases.
In the table below, use Einstein relation to find the diffusivity Dn and Dp. DIY
Doping Con(cm-3) mn(cm2/Vs)
mp(cm2/Vs)
Dn(cm2/s)
Dp(cm2/s)
Intrinsic
1350
480
1016
1200
400
1017
750
260
1018
380
160
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PN Junction Diode
VP
P-type
P-Si Si
VP
N-type Si
Anode
VN
VN
Cathode
Forward Bias:
VP
> VN
Reverse Bias :
VP
< VN
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Built-in Potential :
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Space-charge neutrality:
x
xp xn
qNA xp = qND xn
Total negative charge = Total positive charge
Wdep
Solve the above TWO eqs for xn and xp
depl width of n-side
Built-in Potential :
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P 3.15) In a pn junction for which NA >> ND, and the depletion layer exists mostly on the
shallowly doped side with W=0.2mm, find V0 if ND=1016/cm3. Also calculate QJ for the
case A=10 mm2. (cf. Table 3.1 below)
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Junction Capacitance CJ
Under a varying reverse bias voltage, it acts like a variable capacitor.
The capacitance comes from the depletion region dielectric.
In general,
Where,
m=junction grading coefficient
m= 1/2 = abrupt grading
m= 1/3 = linear grading
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P 3.13) Acceptor conc NA=1017/cm3 and donor conc ND=1016/cm3. Find built-in voltage (V0)
depletion width(W), its extents into n- and p-regions(xn, xp), when junction terminals are left open
Calculate charge stored in either side of junction for A=100mm2. (P 3. 17) If 3-V reverse bias is
applied, find W and QJ. (P 3.24) Find CJ0 and CJ at VR=3 V.
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=3.25x10-8 F/cm2
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tT = Transit Time
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Diffusion current
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excess
Holes
excess
Electron
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Where,
tp= lifetime of excess hole
At x=xn, the hole diffusion current is
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