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0A
B
BT152-800R
SCR
Rev. 2 9 June 2011
1. Product profile
1.1 General description
Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package
intended for use in applications requiring very high inrush current capability and high
thermal cycling performance.
1.3 Applications
Ignition circuits
Motor control
Voltage regulation
Symbol
Parameter
Min
Typ
Max Unit
VDRM
800
VRRM
800
ITSM
non-repetitive peak
on-state current
200
220
Conditions
IT(AV)
13
IT(RMS)
20
VD = 12 V; IT = 0.1 A;
Tj = 25 C; see Figure 7
32
mA
Static characteristics
IGT
BT152-800R
NXP Semiconductors
SCR
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
cathode
anode
gate
mb
Graphic symbol
mb
K
G
sym037
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
BT152-800R
Name
Description
Version
TO-220AB
SOT78
4. Limiting values
Table 4.
Limiting values
Parameter
VDRM
Conditions
Min
Max
Unit
800
VRRM
800
IT(AV)
13
IT(RMS)
20
ITSM
200
220
I2t
200
A2s
dIT/dt
200
A/s
IGM
VRGM
PGM
20
PG(AV)
0.5
Tstg
storage temperature
-40
150
Tj
junction temperature
125
BT152-800R
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BT152-800R
NXP Semiconductors
SCR
003aag276
25
IT(RMS)
(A)
003aag277
50
IT(RMS)
(A) 45
20
40
35
15
30
25
20
10
15
5
10
5
0
-50
50
100
0
10-2
150
10-1
Tmb (C)
Fig 1.
Fig 2.
1
10
surge duration (s)
30
Ptot
(W)
25
20
15
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
92
Tmb(max)
(C)
a = 1.57
2.2
103
1.9
2.8
4
10
114
125
0
0
Fig 3.
10
12
IT(AV) (A)
14
BT152-800R
3 of 12
BT152-800R
NXP Semiconductors
SCR
003aad221
220
I TSM
200
(A)
180
160
140
120
100
80
IT
ITSM
60
40
t
tp
Tj(init) = 25 C max
20
0
1
Fig 4.
102
10
103
104
number of cycles
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aad222
103
ITSM
(A)
(1)
102
IT
10
105
Fig 5.
ITSM
t
tp
Tj(init) = 25 C max
104
103
tp (s)
102
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT152-800R
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BT152-800R
NXP Semiconductors
SCR
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
see Figure 6
1.1
K/W
Rth(j-a)
in free air
60
K/W
003aad212
10
Zth(j-mb)
(K/W)
1
101
=
tp
T
102
t
tp
T
103
105
104
103
102
101
10
tp (s)
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse width
BT152-800R
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BT152-800R
NXP Semiconductors
SCR
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT
VD = 12 V; IT = 0.1 A; Tj = 25 C;
see Figure 7
32
mA
IL
latching current
VD = 12 V; IG = 0.1 A; Tj = 25 C;
see Figure 8
25
80
mA
IH
holding current
VD = 12 V; Tj = 25 C; see Figure 9
15
60
mA
VT
on-state voltage
IT = 40 A; Tj = 25 C; see Figure 10
1.4
1.75
VGT
VD = 12 V; IT = 0.1 A; Tj = 25 C;
see Figure 11
0.6
1.5
0.25
0.4
ID
off-state current
VD = 800 V; Tj = 125 C
0.2
mA
IR
reverse current
Tj = 125 C; VR = 800 V
0.2
mA
Dynamic characteristics
dVD/dt
200
300
V/s
tgt
tq
70
003aag279
3
IGT
IGT(25C)
IL
IL(25C)
0
-50
Fig 7.
50
100
Tj (C)
0
-50
150
50
100
150
Tj (C)
BT152-800R
003aag280
Fig 8.
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SCR
003aag281
003aag282
50
IT
(A)
IH
IH(25C)
40
2
30
20
(1)
(2)
(3)
10
0
-50
0
0
50
100
Tj (C)
150
VT (V)
Vo = 1.06 V; Rs = 0.03
(1) Tj = 125 C; typical values
(2) Tj = 125 C; maximum values
(3) Tj = 25 C; maximum values
Fig 9.
1.6
104
(1)
VGT
VGT(25C)
dVD/dt
(V/ms)
1.2
103
(2)
102
0.8
0.4
-50
10
0
50
100
150
Tj (C)
BT152-800R
50
100
Tj (C)
150
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BT152-800R
NXP Semiconductors
SCR
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
A
A1
mounting
base
D1
L1(1)
L2(1)
Q
b1(2)
(3)
b2(2)
(2)
1
b(3)
e
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A1
b1(2)
b2(2)
D1
L1(1)
L2(1)
max.
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
BT152-800R
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SCR
8. Revision history
Table 7.
Revision history
Document ID
Release date
Change notice
Supersedes
BT152-800R v.2
20110609
BT152_SERIES v.1
Modifications:
BT152_SERIES v.1
BT152-800R
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BT152-800R separated from data sheet BT152_SERIES v.1.
19970301
Product specification
9 of 12
BT152-800R
NXP Semiconductors
SCR
9. Legal information
9.1
Definition
Development
This document contains data from the objective specification for product development.
Qualification
Production
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
9.3
Disclaimers
BT152-800R
10 of 12
BT152-800R
NXP Semiconductors
SCR
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors specifications such use shall be solely at customers
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors
standard warranty and NXP Semiconductors product specifications.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V.
HD Radio and HD Radio logo are trademarks of iBiquity Digital
Corporation.
BT152-800R
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BT152-800R
NXP Semiconductors
SCR
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section Legal information.